CN107250424A - The excellent Ni series target materials of sputtering - Google Patents
The excellent Ni series target materials of sputtering Download PDFInfo
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- CN107250424A CN107250424A CN201680006203.9A CN201680006203A CN107250424A CN 107250424 A CN107250424 A CN 107250424A CN 201680006203 A CN201680006203 A CN 201680006203A CN 107250424 A CN107250424 A CN 107250424A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7379—Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
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Abstract
The present invention provides Ni base sputtering target materials, it is characterised in that can to obtain the Ni based alloy sputtering target materials that permeability is low, service efficiency is high of strong leakage magnetic flux, is containing containing (NiX- FeY- CoZ)-M alloys Ni base sputtering target materials, in the alloy, it is used as M element, containing from W, Mo, Ta, Cr, V, the one or more kinds of M1 elements selected in Nb add up to 2~20at.%, from Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C, the one or more kinds of M2 elements selected in Ru add up to 0~10at.%, surplus is by Ni, Fe, Co and inevitable impurity are constituted, and, during X+Y+Z=100, 20≤X≤98, 0≤Y≤50, 0≤Z≤60, and, the alloy congee chafing dish, it is the microstructure with Ni-M phases as matrix phase, and with the microstructure that Fe phases and/or Co phases are dispersed with matrix phase.
Description
Technical field
The present invention relates to the Ni based alloy sputtering target materials that the permeability that can obtain strong leakage magnetic flux is low, service efficiency is high.
Background technology
In recent years, significantly, for the high capacity of driver, recording for magnetic recording media is highly dense for the progress of perpendicular magnetic recording
Degreeization is promoted, and using magnetic recording media in the face popularized in the past, can realize the perpendicular magnetic recording of higher packing density
Obtain practical.Here, so-called perpendicular magnetic recording, is exactly in the magnetic film of perpendicular magnetic recording medium, to make easy magnetizing axis
Vertically it is orientated and is formed relative to medium side, is adapted for the method for high record density.
Moreover, in perpendicular magnetic recording, developing with the magnetic recording film phase and soft magnetism for improving packing density
The recording medium of film phase, in such medium construction, developing the film forming between soft ferromagnetic layer and magnetic recording layer has inculating crystal layer
With the recording medium of bottom membrane.In the inculating crystal layer of the perpendicular magnetic recording, the alloy of NiW systems is typically used.
On the other hand, as one gimmick of magnetic recording characteristic of hard disk drive is improved, proposition, which has, makes inculating crystal layer possess magnetic
Property method, for example, disclosed in Japanese Unexamined Patent Publication 2012-128933 publications (patent document 1), proposition has one kind by adding
Plus have Fe, Co of the magnetic element as VIII, so as to gather around magnetic inculating crystal layer.
【Prior art literature】
【Patent document】
【Patent document 1】Japanese Unexamined Patent Publication 2012-128933 publications
【Patent document 2】Japanese Unexamined Patent Publication 2010-59540 publications
In the film forming of above-mentioned inculating crystal layer, typically using magnetron sputtering system.The so-called magnetron sputtering system, be exactly
The behind configuration magnet of target, makes flux leakage on the surface of target, plasma is assembled in the leakage magnetic flux region, so as to
With the sputtering method of high speed film forming.The magnetron sputtering system has the feature that, magnetic flux is leaked in the sputtering surface of target, because
When the permeability of this target itself is high, it is difficult to the sufficient leakage field required for sputtering surface formation magnetron sputtering system in target
It is logical.Therefore, it is necessary to strongly reduce the permeability of target itself.But, because permeability is high in above-mentioned target, leakage magnetic flux
Low, lacking sputtering this point turns into problem.
On the other hand, as one of the gimmick for reducing permeability, such as No. 2010-59540 (patent document of Japanese Unexamined Patent Publication
2) so, in pure Co sputtering target materials, there is the method that permeability is reduced using pure Co powder by raw material.But, patent text
The method for offering 2 is merely able to adapt to soft magnetism mutually use Co-Fe alloy target materials, it is impossible to corresponding inculating crystal layer Ni alloy target materials etc..
In addition, Fe sources use alloy, the research of the powder sintering using pure Fe powder is not carried out.
The content of the invention
Therefore, present inventor uses Ni-M series alloy powders, pure Fe powder, pure Co powder as material powder, studies seed
The manufacture method of crystal layer Ni-Co-Fe alloy target materials, its result is found, can obtain the Ni-Co-Fe of strong leakage magnetic flux
Alloy target material.
Present invention hair contains following scheme.
(1) a kind of Ni base sputtering targets material, is containing (NiX- FeY- CoZ)-M alloys are (here, X represents Ni content pair
In the ratio of Ni, Fe and Co total content, Y represents Fe ratio of the content for Ni, Fe and Co total content, and Z is represented
Ratio of the Co content for Ni, Fe and Co total content.) Ni base sputtering target materials, it is characterised in that the alloy
In, as M element, containing the one or more kinds of M1 elements selected from W, Mo, Ta, Cr, V, Nb total 2~
20at.%, the one or more kinds of M2 members selected from Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C, Ru
Total 0~the 10at.% of element, surplus is made up of Ni, Fe, Co and inevitable impurity, also, during X+Y+Z=100,20≤X≤
98,0≤Y≤50,0≤Z≤60, also, the alloy possesses the microstructure with Ni-M phases as matrix phase, i.e., in institute
State the microstructure that Fe phases and/or Co phases are dispersed with matrix phase.
(2) the Ni base sputtering target materials according to described in (1), it is characterised in that the alloy is total to contain 1.5at.%
Fe and Co above.
(3) the Ni base sputtering target materials according to described in (1) or (2), it is characterised in that in the alloy, are used as M members
Element, containing it is total higher than 0at.% and for below 10at.% from Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C,
The one or more kinds of M2 elements selected in Ru.
(4) the Ni base sputtering target materials according to any one of (1)~(3), it is characterised in that contain fcc or hcp
The Co of phase.
(5) the Ni base sputtering target materials according to any one of (1)~(3), it is characterised in that contain fcc or bcc
The Fe of phase.
(6) the Ni base sputtering target materials according to any one of (1)~(3), it is characterised in that leakage magnetic flux is 10%
More than.
In accordance with the invention it is possible to provide can high efficiency carry out magnetron sputtering Ni-Fe-Co-M systems alloy sputtering targets
Material, is that pole has on the industrial product for manufacturing the inculating crystal layer for needing Ni-Fe-Co systems alloy as perpendicular magnetic recording medium
The technology of effect.
Embodiment
Hereinafter, it is illustrated in detail for the present invention.
It is containing (Ni the present invention relates to Ni base sputtering target materialsX- FeY- CoZ)-M alloys are (here, X represents Ni content
For the ratio of Ni, Fe and Co total content, Y represents Fe content for the ratio of Ni, Fe and Co total content, Z tables
Show Co ratio of the content for Ni, Fe and Co total content.) Ni base sputtering target materials, it is characterised in that
(NiX- FeY- CoZ)-M alloys (have the situation for being expressed as " Ni-Fe-Co-M alloys " below.), it is used as M members
Element, containing the one or more kinds of M1 elements selected from W, Mo, Ta, Cr, V, Nb add up to 2~20at.%, from Al, Ga,
The one or more kinds of M2 elements selected in In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C, Ru add up to 0~10at.%,
Surplus is made up of Ni, Fe, Co and inevitable impurity, also,
During X+Y+Z=100,20≤X≤98,0≤Y≤50,0≤Z≤60, also,
(NiX- FeY- CoZ)-M alloys possess the microstructure as matrix phase with Ni-M phases, i.e., in matrix phase
It is dispersed with the microstructure of Fe phases and/or Co phases.The Ni base sputtering target materials of the present invention are preferably inculating crystal layer sputtering target material.
The most important of the present invention is characterised by this following point, sputtering target material (being preferably inculating crystal layer sputtering target material)
In, as material powder, using Ni-M series alloy powders, pure Fe powder, pure Co powder, it is mixed and shapes, separation has
It is weak or do not gather around in magnetic Ni systems alloy that the Fe and/or Co of magnetic and being allowed to is mingled in magnetic.
In the Ni base sputtering target materials of the present invention, in Ni-Fe-Co-M alloys, as M element, containing from W, Mo, Ta,
The one or more kinds of M1 elements selected in Cr, V, Nb add up to 2~20at.%.The M1 elements are to possess dystectic bcc
It is metal, can be added in composition range given to this invention in the Ni-Fe-Co systems as fcc, although its mechanism
It is still not clear, but the orientation towards (111) face required by inculating crystal layer can be improved, and is to make the member of crystal grain miniaturization
Element.Total content of the one or more kinds of M1 elements selected from W, Mo, Ta, Cr, V, Nb, 2 are calculated as with at.% amounts~
20%.When total content of M1 elements is less than 2at.%, its effect is insufficient, if in addition, total content of M1 elements is higher than
20at.%, then compound is separated out, or is occurred decrystallized.As inculating crystal layer alloy, due to requiring single-phase as fcc, so making
The scope of total content of M1 elements is 2~20at.%.Preferably 5~15at.%.
In the Ni base sputtering target materials of the present invention, Ni-Fe-Co-M alloys contain Ni, Fe and Co.Ni content
(at.%), the ratio of Fe content (at.%) and Co content (at.%) for Ni, Fe and Co total content (at.%)
(at. ratios), respectively X, Y and Z (that is, Ni:Fe:Co=X:Y:Z), if X+Y+Z=100, X be 98~20 (i.e. 20≤X≤
98), Y is 0~50 (i.e. 0≤Y≤50), and Z is 0~60 (i.e. 0≤Z≤60).
During X+Y+Z=100, Ni content is 98~20 for the ratio X of Ni, Fe and Co total content.Make X for 98 with
Lower the reasons why, will be that when Y+Z is less than 2.0, coercive force is uprised.In addition, the reasons why making X be more than 20 is, during less than 20, with
Above-mentioned same, coercive force is uprised.Therefore, make in the range of 98~20.Preferably 98~60.
During X+Y+Z=100, Fe content is 0~50 for the ratio Y of Ni, Fe and Co total content.Fe is that reduction is rectified
The element of coercive force, also, be also the element for the orientation for improving film.If Y is higher than 50, coercive force is uprised, therefore makes it
Scope is 0~50.Preferably 2~50, more preferably 10~40.
During X+Y+Z=100, Co content is 0~60 for the ratio Z of Ni, Fe and Co total content.Co is reduction
(111) element of the coercive force in direction.If Z is higher than 60, coercive force is uprised, therefore makes to be limited to 60 thereon.Preferably 40
Below.
In the Ni base sputtering target materials of the present invention, Ni-Fe-Co-M alloys possess with Ni-M phases as matrix phase
Microstructure, i.e., be dispersed with the microstructure of Fe phases and/or Co phases in matrix phase.The identification of microstructure can use X to penetrate
Line diffraction, light microscope etc. are carried out.Have magnetic Fe phases and/or Co phases, by weak or do not have magnetic Ni-M in magnetic
Disperse in phase, can make the magnetic of mother metal reduces, and reduces permeability.By the reduction of permeability, strong leakage magnetic flux can be obtained,
Sputtering can be improved.In Ni-Fe-Co-M alloys, when Fe and Co total amount are more than 1.5at.%, it can make
Ni systems intermediate layer possesses sufficient magnetic.It is therefore preferable that the total content for making Fe and Co is more than 1.5at.%.
In the Ni base sputtering target materials of the present invention, Ni-Fe-Co-M alloys, as M element, containing from Al, Ga, In,
The one or more kinds of M2 elements selected in Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C, Ru add up to 0~10at.%.M2
Element is any condition, but M2 elements are to make the element of (111) planar orientation, in addition, being to make the element of crystal grain miniaturization, therefore
In Ni-Fe-Co-M alloys, preferably comprise more than one or both of the M2 elements.If total content of M2 elements is higher than
10at.%, then compound is generated, or generation is decrystallized, therefore makes to be limited to 10at.% thereon.Preferably 5at.%.In addition, M1+
M2 total content is preferably below 25at.%, more preferably below 20at.%.
In Ni-Fe-Co-M alloys, alloying will not occur with the Ni-M systems alloy as matrix phase for Co, and with
Fcc or hcp phases are single to be present, and Ni-Fe-Co-M alloys are the excellent target of the low sputtering of permeability.In Ni-Fe-
In Co-M alloys, Fe will not be with occurring alloying as the Ni-M systems alloy of matrix phase, and is deposited as fcc or bcc phases are single
Thus Ni-Fe-Co-M alloys are the low excellent target of sputtering of permeability.In Ni-Fe-Co-M alloys, lead to
Crossing Fe and/or Co and be allowed to of the separation with magnetic, to be blended in magnetic weak or do not have in magnetic Ni-M systems alloy, can obtain
More than 10% leakage magnetic flux, thus, Ni-Fe-Co-M alloys turn into the excellent target of sputtering.
The inventors have found that, in the sputtering target material containing Ni-Fe-Co-M alloys, by by Ni-M alloys
Liquation solidifies the powder of processing through over-quenching, and pressing defined composition ratio with pure Fe powder and/or pure Co powder mixes, and into
Shape, is machined, and can manufacture the excellent Ni systems target of the low sputtering of permeability.The Ni base sputtering target materials of the present invention are bases
Obtained from this understanding in present inventor.
When manufacturing the Ni base sputtering target materials of the present invention, pure Fe and/or pure Co powder can be used.Pure Co is preferably formed as fcc
Or hcp structures, in addition, pure Fe is preferably formed as fcc or bcc structures.Therefore, it then follows the present invention, Ni-M systems alloyed powder is being used
In last, pure Fe powder, pure Co powder, the target for being mixed and making, can by X-ray diffraction, clearly observe fcc or
The pure Co of cp phases and/or the pure Fe of fcc or bcc phases are present.On the other hand distinguish, in the Fe and/or Co of alloying, do not see
Measure their peak value.
The alloy powder of making is preferably classified as less than 500 μm of powder., being capable of suitable gas mist in the making of powder
Change method, water atomization, rotary disk atomisation method etc..The target made by measurement leakage magnetic flux (Pass-Through-Flux,
Describe below is " PTF ".) when, it can use and permanent magnet is configured at the back side of target, the magnetic flux that measurement is leaked in target material surface
Method.This method can measure the leakage magnetic flux close to this state of magnetic controlled tube sputtering apparatus quantitatively.Actual measurement is based on
ASTM F2806-01 (Standard Test Method for Pass Through Flux of Circular
Magnetic Sputtering Targets Method2) carry out, PTF is tried to achieve by following formula.
(PTF)=100 × (intensity for being placed with the magnetic flux in the state of target) ÷ (does not place the magnetic in the state of target
Logical intensity) (%)
【Embodiment】
Hereinafter, further specifically it is illustrated by embodiment for the present invention.
In material powder, pure Fe powder, pure Co powder, Ni-M series alloy powders are made by gas atomization.Gas
The condition of body atomization, using gaseous species as argon gas, nozzle diameter is 6mm, and air pressure is carried out for 5MPa condition.
For above-mentioned Ni-M series alloy powders, each mixed-powder of pure Fe powder, pure Co powder is filled into by SC materials
In the hermetically sealed can of composition, vacuum 10 is reached-1More than Pa is de-gassed after vacuum sealing, in pressure sintering method, in temperature
1100K, 147MPa, the condition of 5 hours retention times, to temperature 950K, 147MPa, the condition of 5 hours retention times, are fabricated to
Body, secondly by machining, external diameter 180mm, thickness 7mm target are obtained as net shape.Mixed-powder is used
, pure Fe powder, pure Co powder, Ni-M series alloy powders have been stirred to the material of 1 hour by V-Mixer.Separately
Outside, as the pressure sintering method of mixed-powder, hot pressing, high temperature insostatic pressing (HIP), energization pressure sintering, hot extrusion etc. can be applicable.
Measurement, evaluation for the correlation properties of resulting target are illustrated.
[permeability]
In the permeability of the target made by measurement, external diameter 15mm, internal diameter 10mm, high 5mm ring test piece are made,
Using BH drawing apparatus, maximum permeability is measured under 8kA/m externally-applied magnetic field.Maximum permeability is "○" below 1000, high
It is "×" in 1000.
[PTF]
During the PTF for the target made in measurement, permanent magnet is configured at the back side of target, measures what is leaked in target material surface
Magnetic flux.The PTF of the target of comparative example be less than 10%, but embodiments of the invention target show more than 10% PTF.
[Fe phases, Co phases]
When being observed for the Co phases of target and/or Fe phases made, width 10mm, long 20mm, thickness 5mm examination are made
Piece is tested, diffraction pattern is obtained by X-ray diffraction device.X sources are Cu- alpha rays, are measured with 4 °/min sweep speed.In reality
In the XRD spectrum for the target for applying example, with main peak, it was further observed that by fcc or hcp Co phases and/or fcc or bcc Fe phases
Caused peak.By XRD it was observed that fcc or hcp Co phases and/or fcc or bcc Fe phases for "○", what is do not observed is
“×”。
[component segregation]
When being measured for the component distributing of the target of making, width 10mm, long 20mm, thickness 5mm test film are made, by
EPMA (electron probe microanalyzer) observes the distribution of each principal component.In the target of comparative example, observe Fe, Co equably
In the presence of, but in the target of embodiment, the deviation that is distributed with of Fe, Co composition is observed, Fe, Co's is single-phase with separated state
It is blended in Ni-M systems.According to EPMA, the distribution of Fe, Co composition is devious to be expressed as "○", the table that Fe, Co are uniformly present
It is shown as "×".
【Table 1】
【Table 2】
As shown in Table 1 and Table 2, No.1~30 are examples of the present invention, and No.31~41 are comparative examples.In Tables 1 and 2, X tables
Show Ni ratio of the content (at.%) for Ni, Fe and Co total content (at.%), Y represents that Fe content (at.%) is right
In the ratio of Ni, Fe and Co total content (at.%), Z represents that Co content (at.%) contains for the total of Ni, Fe and Co
Measure the ratio of (at.%).Further, X+Y+Z=100.Ni, Fe and Co total content (at.%), by from 100 (at.%)
Subtract M1+M2 total content W (at.%) and try to achieve.For example, in No.1, Ni, Fe and Co total content (at.%) are
100 (at.%) -6 (at.%)=94 (at.%).
As shown in table 2, comparative example 31~41, are used as the raw material for having magnetic Ni systems inculating crystal layer alloy target material, Fe sources
And/or Co sources only use alloy, therefore gather around magnetic Fe and/or Co is uniformly present.Therefore, it can observe leading higher than 1000
Magnetic rate, PTF is less than 10%.In addition, Fe and/or Co exists with the state of alloy, XRD respective intrinsic peak value can observe.
In contrast, as shown in table 1, in example No.1~30 of the present invention, Ni-M systems alloyed powder is used as material powder
Last, pure Fe powder, pure Co powder, are mixed, and shape, and are separated so as to have magnetic Fe and/or Co and are blended in magnetic
Property is weak or does not have in magnetic Ni systems alloy, shows less than 1000 permeability, shows more than 10% PTF.In addition, Fe
And/or Co exists with monomer, the Fe of Co and/or fcc or the bcc phase of fcc or hcp phases is observed by X-ray diffraction.Its result can
Know, as example No.1~30 of the present invention, use pure Fe powder, pure Co powder in shaping, Fe and/or Co's is single-phase to be separated
State be blended in sputtering target material in Ni-M systems, the reduction of its permeability.
It is as set forth above, according to the present invention, in the Ni base sputtering target materials containing Ni-Fe-Co-M alloys, Ni,
Fe, Co ratio are Ni in terms of at% benchmark:Fe:Co=98~20:0~50:0~60, also, as M element, containing from
The one or more kinds of M1 2~20at% of element selected in W, Mo, Ta, Cr, V, Nb, containing from Al, Ga, In, Si, Ge,
The one or more kinds of M2 elements selected in Sn, Zr, Ti, Hf, B, Cu, P, C, Ru add up to 0~10at.%, also, Fe
And/or the single-phase of Co is blended in as in the Ni-M systems of matrix phase using separated state, thus can provide leakage magnetic flux by force, splash
The excellent Ni base sputtering target materials of penetrating property, Ni base sputtering target materials of the invention realize excellent result.Sputtered in the Ni systems of the present invention
In target, preferably Fe+Co >=1.5at.%.
Claims (6)
1. a kind of Ni base sputtering targets material, it is characterised in that be containing (NiX- FeY- CoZ)-M alloys Ni base sputtering targets
Material,
Here, X represents Ni ratio of the content for Ni, Fe and Co total content, Y represent Fe content for Ni, Fe and
The ratio of Co total content, Z represents Co ratio of the content for Ni, Fe and Co total content,
In the alloy,
As M element, containing the one or more kinds of M1 elements selected from W, Mo, Ta, Cr, V, Nb total 2~
20at.%；The one or more kinds of M2 members selected from Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C, Ru
Total 0~the 10at.% of element,
Surplus is made up of Ni, Fe, Co and inevitable impurity, also,
During X+Y+Z=100,20≤X≤98,0≤Y≤50,0≤Z≤60, also,
The alloy possesses the microstructure as matrix phase with Ni-M phases, i.e., be dispersed with described matrix phase Fe phases and/
Or the microstructure of Co phases.
2. Ni base sputtering targets material according to claim 1, it is characterised in that the alloy contains Fe and Co and added up to
More than 1.5at.%.
3. Ni base sputtering targets material according to claim 1 or 2, it is characterised in that in the alloy, as M element, contains
It is total to be higher than 0at.% and selected for below 10at.% from Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C, Ru
One or more kinds of M2 elements.
4. according to Ni base sputtering targets material according to any one of claims 1 to 3, it is characterised in that contain fcc or hcp phases
Co。
5. according to Ni base sputtering targets material according to any one of claims 1 to 3, it is characterised in that contain fcc or bcc phases
Fe。
6. according to Ni base sputtering targets material according to any one of claims 1 to 3, it is characterised in that leakage magnetic flux is more than 10%.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015023101A JP6581780B2 (en) | 2015-02-09 | 2015-02-09 | Ni-based target material with excellent sputtering properties |
| JP2015-023101 | 2015-02-09 | ||
| PCT/JP2016/053350 WO2016129492A1 (en) | 2015-02-09 | 2016-02-04 | Ni BASED TARGET MATERIAL WITH EXCELLENT SPUTTERING PROPERTIES |
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| Publication Number | Publication Date |
|---|---|
| CN107250424A true CN107250424A (en) | 2017-10-13 |
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| CN201680006203.9A Pending CN107250424A (en) | 2015-02-09 | 2016-02-04 | The excellent Ni series target materials of sputtering |
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|---|---|
| JP (1) | JP6581780B2 (en) |
| CN (1) | CN107250424A (en) |
| MY (1) | MY188184A (en) |
| SG (2) | SG10201906538UA (en) |
| TW (1) | TW201700742A (en) |
| WO (1) | WO2016129492A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113825856A (en) * | 2019-05-07 | 2021-12-21 | 山阳特殊制钢株式会社 | Ni-based sputtering target and magnetic recording medium |
| CN115161603A (en) * | 2022-05-17 | 2022-10-11 | 广东欧莱高新材料股份有限公司 | Production process of high-purity multi-element alloy rotary sputtering target for high-generation high-definition liquid crystal display |
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| JPWO2021054136A1 (en) * | 2019-09-19 | 2021-03-25 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0297636A (en) * | 1987-11-25 | 1990-04-10 | Hitachi Metals Ltd | Sintered target member and its manufacture |
| JP2010248603A (en) * | 2009-04-20 | 2010-11-04 | Hitachi Metals Ltd | METHOD FOR PRODUCING Fe-Co-Ni-BASED ALLOY SPUTTERING TARGET MATERIAL |
| JP2013044024A (en) * | 2011-08-24 | 2013-03-04 | Nippon Steel & Sumitomo Metal Corp | Surface-treated hot-dip plated steel |
| CN103221999A (en) * | 2010-11-22 | 2013-07-24 | 山阳特殊制钢株式会社 | Alloy for seed layer of magnetic recording medium, and sputtering target material |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030228238A1 (en) * | 2002-06-07 | 2003-12-11 | Wenjun Zhang | High-PTF sputtering targets and method of manufacturing |
| JP5403418B2 (en) * | 2008-09-22 | 2014-01-29 | 日立金属株式会社 | Method for producing Co-Fe-Ni alloy sputtering target material |
-
2015
- 2015-02-09 JP JP2015023101A patent/JP6581780B2/en active Active
-
2016
- 2016-02-04 MY MYPI2017702870A patent/MY188184A/en unknown
- 2016-02-04 SG SG10201906538UA patent/SG10201906538UA/en unknown
- 2016-02-04 WO PCT/JP2016/053350 patent/WO2016129492A1/en active Application Filing
- 2016-02-04 CN CN201680006203.9A patent/CN107250424A/en active Pending
- 2016-02-04 SG SG11201706370SA patent/SG11201706370SA/en unknown
- 2016-02-05 TW TW105104154A patent/TW201700742A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0297636A (en) * | 1987-11-25 | 1990-04-10 | Hitachi Metals Ltd | Sintered target member and its manufacture |
| JP2010248603A (en) * | 2009-04-20 | 2010-11-04 | Hitachi Metals Ltd | METHOD FOR PRODUCING Fe-Co-Ni-BASED ALLOY SPUTTERING TARGET MATERIAL |
| CN103221999A (en) * | 2010-11-22 | 2013-07-24 | 山阳特殊制钢株式会社 | Alloy for seed layer of magnetic recording medium, and sputtering target material |
| JP2013044024A (en) * | 2011-08-24 | 2013-03-04 | Nippon Steel & Sumitomo Metal Corp | Surface-treated hot-dip plated steel |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113825856A (en) * | 2019-05-07 | 2021-12-21 | 山阳特殊制钢株式会社 | Ni-based sputtering target and magnetic recording medium |
| CN113825856B (en) * | 2019-05-07 | 2024-04-02 | 山阳特殊制钢株式会社 | Ni-based sputtering target and magnetic recording medium |
| CN115161603A (en) * | 2022-05-17 | 2022-10-11 | 广东欧莱高新材料股份有限公司 | Production process of high-purity multi-element alloy rotary sputtering target for high-generation high-definition liquid crystal display |
| CN115161603B (en) * | 2022-05-17 | 2023-02-21 | 广东欧莱高新材料股份有限公司 | Production process of high-purity multi-element alloy rotary sputtering target for high-definition liquid crystal display of high generation |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201700742A (en) | 2017-01-01 |
| WO2016129492A1 (en) | 2016-08-18 |
| MY188184A (en) | 2021-11-24 |
| JP6581780B2 (en) | 2019-09-25 |
| JP2016145394A (en) | 2016-08-12 |
| SG10201906538UA (en) | 2019-08-27 |
| SG11201706370SA (en) | 2017-09-28 |
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