CN107241090A - A kind of VCO biasing circuits with anti-single particle effect function - Google Patents
A kind of VCO biasing circuits with anti-single particle effect function Download PDFInfo
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- CN107241090A CN107241090A CN201710368033.5A CN201710368033A CN107241090A CN 107241090 A CN107241090 A CN 107241090A CN 201710368033 A CN201710368033 A CN 201710368033A CN 107241090 A CN107241090 A CN 107241090A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/0033—Radiation hardening
- H03K19/00338—In field effect transistor circuits
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Abstract
The present invention discloses a kind of VCO biasing circuits with anti-single particle effect function, including load resistance biasing module and tail current circuit bias module, load resistance biasing module produces the first bias voltage by first switch pipe unit and exported to load resistance in VCO loops, tail current circuit bias module produces the second bias voltage by second switch pipe unit, exports to tail current circuit in VCO loops and feeds back to first switch pipe unit, second switch pipe unit respectively.The present invention has anti-single particle effect function, and the advantages of simple in construction, required cost is low, Flouride-resistani acid phesphatase is strong.
Description
Technical field
There is anti-single particle effect suitable for phaselocked loop the present invention relates to technical field of integrated circuits, more particularly to one kind
The VCO biasing circuits of function.
Background technology
With the continuous reduction of space flight, the fast development of aviation industry and integrated circuit technology size, radiation effect is to electricity
The influence of subsystem work state is increasingly serious, results even in system crash.Phaselocked loop in analog circuit（PLL）For wherein one
Individual key component, for the clock signal needed for whole circuit system is provided, and VCO in phaselocked loop（VCO）To produce clock
Part, its anti-SET（Single Event Transient, single-event transients）Performance will directly affect output clock.In VCO
In, the radiation sensitivity of its bias circuit portion is even more serious, and biasing circuit can stop oscillating loop under energetic particle hits
A large amount of cycles are only vibrated, and oscillating loop can only influence output clock phase to change under the influence of irradiation effect, and can lock quickly
It is fixed, so the radiation hardened of VCO biasing circuits is even more important.
To improve VCO biasing circuit anti-radiation performances, a kind of method is that, by being improved to existing technique, such as China is special
Profit application（200510029396）A kind of field-effect transistor anti-irradiation reinforcement means of the silicon materials based on insulator is disclosed,
In method of the device level by reducing back of the body ditch leakage current caused by irradiation, circuit Flouride-resistani acid phesphatase energy can be improved to a certain extent
Power, but the effect of the overall Radiation hardness of circuit is still smaller, and existing technique is improved, greatly increase it can be designed to
This；Another method is to use double offset circuit engineering, can effectively improve anti-radiation performance, but existing double offset circuit
Middle load resistance bias-voltage generating circuit and tail current circuit bias voltage generation circuit can produce influence each other, because
And it is still limited to the anti-radiation performance for improving VCO biasing circuits, it is double inclined especially for the energetic particle hits that energy is larger
Put VCO suitable only with former VCO Radiation hardness.
VCO double offset circuits as shown in Figure 1, including switching tube M1, M2 and difference amplifier A1, output voltage
Vbisa_pWith Vbias_bLoad resistance respectively in VCO oscillating loops, tail current circuit provide bias voltage, i.e., by switching tube M1,
M2 produces bias voltage Vbisa_pIt is used as load resistance bias voltage, bias voltage Vbisa_pBiasing is produced again with difference amplifier A1
Voltage Vbias_bIt is used as tail current circuit bias voltage；When high-energy particle bombardment switching tube M1 or M2 drain electrode, arteries and veins can be produced
Rush electric current and cause Vbisa_pVoltage pulsation, the voltage pulsation can not only directly affect the working condition of VCO oscillating loops, can also lead to
Cross difference amplifier A1 and cause Vbias_bVoltage pulsation, so as to further influence the working condition of VCO oscillating loops, Flouride-resistani acid phesphatase energy
Power is not still high.
The content of the invention
The technical problem to be solved in the present invention is that：The technical problem existed for prior art, the present invention provides one
Kind have simple in construction, required cost it is low, can anti-single particle effect, Flouride-resistani acid phesphatase by force there is anti-single particle effect function
VCO biasing circuits.
In order to solve the above technical problems, technical scheme proposed by the present invention is：
A kind of VCO biasing circuits with anti-single particle effect function, including load resistance biasing module and tail current circuit
Biasing module, the load resistance biasing module is exported by first switch pipe unit the first bias voltage of generation and gives VCO loops
Middle load resistance, the tail current circuit bias module produces the second bias voltage by second switch pipe unit, exports to VCO
In loop tail current circuit and the first switch pipe unit, second switch pipe unit are fed back to respectively.
As a further improvement on the present invention：The first switch pipe unit includes first switch pipe M4 and second switch
Pipe M5, the first switch pipe M4 are connected with the second switch pipe M5 to produce first bias voltage, and described first opens
Pipe M4 connections control power end is closed, the second switch pipe M5 accesses described the second of the tail current circuit bias module feedback
Bias voltage.
As a further improvement on the present invention：The second switch pipe unit includes the 3rd switching tube M6, the 4th switching tube
M7, the 3rd switching tube M6 are connected to produce the 3rd bias voltage, the 3rd switching tube M6 with the 4th switching tube M7
Connection control power end, the 4th switching tube M7 accesses second biased electrical of the tail current circuit bias module feedback
Pressure.
As a further improvement on the present invention：The grid that the load resistance biasing module passes through the second switch pipe M5
It is connected to access the tail current circuit bias module with the grid of the 4th switching tube M7 in the tail current circuit bias module
Second bias voltage of feedback.
As a further improvement on the present invention：The first switch pipe unit includes two switching branches, is opened described in every
Two switching tubes that branch road includes being connected with each other, and one of switching tube connection control power end are closed, another switching tube connects
Enter single by the first filtering between second bias voltage of the tail current circuit bias module feedback, two switching branches
Member connects to export first bias voltage.
As a further improvement on the present invention：First filter unit includes two resistance R and electric capacity C, two institutes
The one end for stating resistance R is connected respectively the switching branches, and the other end is connected to export described first with the electric capacity C
Bias voltage.
As a further improvement on the present invention：The tail current circuit bias module also includes and the second switch Guan Dan
The amplifying unit of member connection, the amplifying unit accesses the first bias voltage that the second switch pipe unit is produced, and output is put
Bias voltage after big.
As a further improvement on the present invention：The amplifying unit includes difference amplifier A2, the difference amplifier A2
Normal phase input end access first bias voltage, inverting input Access Control power supply Vc.
As a further improvement on the present invention：The output end of the tail current circuit bias module is additionally provided with the second filtering
Unit, by exporting second bias voltage after second filtering unit filters.
As a further improvement on the present invention：Second filter unit be RC low pass filters, including resistance R1 and
Electric capacity M8, the resistance R1 one end connect the output end of the amplifying unit, and the other end is grounded by the electric capacity M8.
Compared with prior art, the advantage of the invention is that：
1）The present invention has the VCO biasing circuits of anti-single particle effect function, by setting load resistance biasing module, tail current
Two circuit modules of circuit bias module, produce be supplied to load resistance in VCO loops, the biased electrical of tail current circuit respectively
Pressure so that the state of another road circuit is not interfered with when wherein circuit produces pulse current all the way, when high-energy particle bombardment its
In all the way in circuit during switching tube, the pulse current of generation only influences the bias voltage that current circuit is produced, and does not interfere with another
The bias voltage of circuit, does not interfere with the working condition of VCO subordinates circuit, load resistance biasing module, tail current electricity yet all the way
The isolation features of pseudo- disconnection can be realized between the biasing module of road, the anti-radiation performance of VCO biasing circuits is effectively increased；
2）The present invention has the VCO biasing circuits of anti-single particle effect function, further defeated in tail current circuit bias module
Go out end and be provided with filtration module, when the switching tube of high-energy particle bombardment tail current circuit bias module, irradiation effect can be weakened
The influence of tail current circuit bias voltage is tackled, so that the anti-radiation performance of circuit is further improved, with reference to load resistance biasing
The isolation that module, tail current circuit bias module puppet disconnect is set, and enables to not only not interfere with this in VCO grade circuit but also will not
The radiation sensitive node of subordinate's circuit is influenceed, the anti-radiation performance of circuit is greatly improved.
Brief description of the drawings
Fig. 1 is traditional VCO double offset electrical block diagrams.
Fig. 2 is the principle schematic diagram of VCO biasing circuit of the present invention with anti-single particle effect function.
Fig. 3 is the structural representation for the VCO biasing circuits that the embodiment of the present invention 1 has anti-single particle effect function.
Fig. 4 is principle schematic diagram of the VCO biasing circuits under irradiation effect in the embodiment of the present invention 1.
Fig. 5 is the structural representation for the VCO biasing circuits that the embodiment of the present invention 2 has anti-single particle effect function.
Fig. 6 is the realization principle schematic diagram of tradition reduction filter voltage fluctuation.
Marginal data：1st, load resistance biasing module；11st, first switch pipe unit；12nd, the first filter unit；2nd, tail electricity
Current circuit biasing module；21st, second switch pipe unit；22nd, amplifying unit；23rd, the second filter unit.
Embodiment
Below in conjunction with Figure of description and specific preferred embodiment, the invention will be further described, but not therefore and
Limit the scope of the invention.
As shown in Fig. 2 VCO biasing circuit of the present invention with anti-single particle effect function includes load resistance biasing module
1 and tail current circuit bias module 2, load resistance biasing module 1 passes through first switch pipe unit 11 and produces the first biased electrical
Press Vbias_pExport to load resistance in VCO loops, tail current circuit bias module 2 produces the by second switch pipe unit 21
Two bias voltage Vbias_b, export to tail current circuit in VCO loops and feed back to first switch pipe unit 11, second respectively
Switch pipe unit 21.
The present embodiment uses above-mentioned VCO biasing circuits, produces to be supplied in VCO loops respectively by two circuit modules and bears
Carry the first bias voltage V of resistancebias_p, be supplied to the second bias voltage V of tail current circuit in VCO loopsbias_bThere is provided to
The bias voltage of tail current circuit feeds back to first switch pipe unit 11, second switch pipe unit 21 simultaneously, VCO can be kept inclined
The normal operating conditions of circuits, while realizing pseudo- disconnect between load resistance biasing module 1, tail current circuit bias module 2
Isolation features, wherein：
When switching tube in high-energy particle bombardment first switch pipe unit 11, due to load resistance biasing module 1, tail current circuit
Biasing module 2 is that two modules are mutually isolated, and the pulse current that first switch pipe unit 11 is produced can only cause load resistance
Bias voltage is fluctuated, and is not interfered with the bias voltage state of tail current circuit, also will not further be influenceed VCO subordinates circuit VCO
The working condition of oscillating loop；
When switching tube in high-energy particle bombardment second switch pipe unit 21, due to load resistance biasing module 1, tail current circuit
Biasing module 2 is that two modules are mutually isolated, then the pulse current that second switch pipe unit 21 is produced can only cause tail current electricity
The bias voltage fluctuation on road, does not interfere with the bias voltage state of load resistance, so as to effectively increase the anti-of VCO biasing circuits
Irradiation behaviour.
In the present invention, tail current circuit bias module 2 also includes the amplifying unit 22 being connected with second switch pipe unit 21,
The first bias voltage V that the access second switch of amplifying unit 22 pipe unit 21 is producedbias_p, the bias voltage after output amplification.
In the present invention, the output end of tail current circuit bias module 2 is additionally provided with the second filter unit 23, and the second filtering is single
Member 23 is connected with the output end of amplifying unit 22, after being filtered by the bias voltage after the 23 pairs of amplifications of the second filter unit,
Output is supplied to the second bias voltage V of tail current circuitbias_b.Set by the output end in tail current circuit bias module 2
Second filter unit 23, when high-energy particle bombardment second switch pipe unit 21, the pulse current of generation can be by the second filtering
Unit 23 is filtered, and can weaken irradiation effect to being supplied to the second bias voltage V of tail current circuitbias_bInfluence, from
And further improve the anti-radiation performance of circuit, with reference to above-mentioned load resistance biasing module 1, tail current circuit bias module 2 it
Between the pseudo- isolation disconnected set, enable to not only not interfere with this grade of circuit but also do not interfere with the radiation sensitive section of subordinate's circuit
Point, greatly improves the anti-radiation performance of circuit.
Embodiment 1：
The VCO biasing circuits with anti-single particle effect function are as shown in figure 3, wherein first switch pipe unit 11 in the present embodiment
Including first switch pipe M4 and second switch pipe M5, first switch pipe M4 grid connection control voltage Vc, source electrode connection electricity
Source VDD, second switch pipe M5 source class ground connection, first switch pipe M4 drain electrode are connected to produce with second switch pipe M5 drain electrode
It is supplied to the first bias voltage V of load resistancebias_p；Second switch pipe unit 21 includes the 3rd switching tube M6, the 4th switching tube
M7, the 3rd switching tube M6 grid connection control voltage Vc, source electrode connection power vd D, the 4th switching tube M7 source class ground connection, the
Three switching tube M6 drain electrode is connected to produce bias voltage V with the 4th switching tube M7 drain electrodebias_p2.Load resistance biasing module
1 is connected by second switch pipe M5 with the 4th switching tube M7 in tail current circuit bias module 2, specific second switch pipe M5 grid
Pole is connected with the 4th switching tube M7 grid, and accesses the second bias voltage V of the feedback of tail current circuit bias module 2bias_b。
Amplifying unit 22 includes difference amplifier A2, difference amplifier A2 inverting input connection control in the present embodiment
Voltage Vc, normal phase input end connects the 3rd switching tube M6 drain electrode, the 4th switching tube M7 drain electrode to access bias voltage respectively
Vbias_p2, the bias voltage after output end output amplification.
As shown in figure 3, the second filter unit 23 specifically uses RC low pass filters in the present embodiment, including resistance R1 and
Electric capacity M8, resistance R1 one end connect the output end of amplifying unit 22, and the other end is grounded by electric capacity M8, and wherein electric capacity M8 is specific
For capacitor transistor, capacitor transistor is by source class, grounded drain, and is exported by grid and to be supplied to the of tail current circuit
Two bias voltage Vbias_b。
As shown in figure 4, during the above-mentioned VCO biasing circuits normal work of the present embodiment, two-way bias voltage is produced, a route the
Three switching tube M6, the 4th switching tube M7 constitute to produce bias voltage Vbias_p2, bias voltage Vbias_p2Only with control voltage VCIt is logical
Cross the second bias voltage V that difference amplifier A2 generates tail current circuitbias_b；Another route first switch pipe M4, second switch
Pipe M5 constitutes to produce the first bias voltage V of load resistancebias_p, only VCO load resistances provide bias voltage.Work as high energy
When particle bombardment first switch pipe M4 or second switch pipe M5 drain electrode, then the pulse current produced only influences to be supplied to
First bias voltage V of VCO load resistancesbias_p；When the switching tube M6 of high-energy particle bombardment the 3rd or the 4th switching tube M7 leakage
During pole, then the pulse current produced only influences to be supplied to the second bias voltage of tail current circuit by difference amplifier A2
Vbias_b, can be realized between load resistance biasing module 1, tail current circuit bias module 2 and pseudo- disconnect isolation features and will not shadow
VCO biasing circuit normal works are rung, and do not interfere with the radiation sensitive node of subordinate's circuit, the Flouride-resistani acid phesphatase of circuit is effectively increased
Performance.
As shown in figure 4, the above-mentioned VCO biasing circuits of the present embodiment are filtered due to adding second in difference amplifier A3 output ends
Unit 23, it is defeated through the second filter unit 23 when the switching tube M6 of high-energy particle bombardment the 3rd or the 4th switching tube M7 drain electrode
Go out to be supplied to the second bias voltage V of tail current circuitbias_b, irradiation effect can be weakened to being supplied to the of tail current circuit
Two bias voltage Vbias_bInfluence so that further improve circuit anti-radiation performance.
Embodiment 2：
As shown in figure 5, the present embodiment is substantially the same manner as Example 1, difference is in load resistance biasing module 1 that first opens
Closing pipe unit 11 includes two switching branches, and every switching branches include two switching tubes being connected with each other, and one of them is opened
Close pipe connection control power end, the second bias voltage of the feedback of another switching tube access tail current circuit bias module 2, every
The structure of switching branches is specifically identical with the circuit structure of load resistance biasing module 1 in embodiment 1, leads between two switching branches
The first filter unit 12 is crossed to connect to export the first bias voltage Vbias_p。
As shown in figure 5, the first filter unit of the present embodiment 12 includes two resistance R and electric capacity C, the one of two resistance R
End is connected respectively a switching branches, and the other end be connected with electric capacity C, is that output port exports the between resistance R and electric capacity C
One bias voltage Vbias_p 。
The present embodiment VCO biasing circuits, filter joint and pseudo- disconnect of load resistance biasing module 1 set generation first
Bias voltage Vbias_p, any switching branches all the way are by high-energy particle bombardment, and the pulse current of generation can all pass through the first filtering
Unit 12 flows out, so as to reduce output voltage fluctuation, can further improve the anti-single particle ability of VCO biasing circuits.
By setting wave filter to realize output filtering, wave filter is set on the basis of one-level switching branches, to subtract
Few fluctuation of the wave filter to output voltage, such as Fig. 6, traditional approach is so that equivalent resistance to be reduced to originally by replicating n times circuit
1/N so that reduction voltage pulsation, but driving force needed for n times circuit is big, it is follow-up to need the amplification with compared with large driving force
Device is driven.The present embodiment is set by pseudo- disconnect of load resistance biasing module 1, and the first filtering is passed through by double switch branch road
Unit 12 exports bias voltage, while can keeping output voltage stabilization, a large amount of settings for reducing front stage circuits, without setting
Multiple front stage circuits are that voltage stabilization can be achieved, and the driving force needed for stage circuit is small, can avoid producing follow up amplifier A2
To the not enough problem of driving of front stage circuits, go in the not high VCO circuits of driving force, it is applied widely.
The above-mentioned load resistance biasing module 1 of the present embodiment, tail current circuit bias module 2 concrete structure can basis
Actual demand uses other circuit structures, and its principle is consistent with the above, is no longer repeated herein.
Above-mentioned simply presently preferred embodiments of the present invention, not makees any formal limitation to the present invention.Although of the invention
It is disclosed above with preferred embodiment, but it is not limited to the present invention.Therefore, it is every without departing from technical solution of the present invention
Content, according to the technology of the present invention essence to any simple modifications, equivalents, and modifications made for any of the above embodiments, all should fall
In the range of technical solution of the present invention protection.
Claims (10)
1. a kind of VCO biasing circuits with anti-single particle effect function, it is characterised in that including load resistance biasing module（1）
And tail current circuit bias module（2）, the load resistance biasing module（1）Pass through first switch pipe unit（11）Produce the
One bias voltage is exported to load resistance in VCO loops, the tail current circuit bias module（2）Pass through second switch pipe unit
（21）The second bias voltage is produced, exports to tail current circuit in VCO loops and feeds back to the first switch Guan Dan respectively
Member（11）, second switch pipe unit（21）.
2. the VCO biasing circuits according to claim 1 with anti-single particle effect function, it is characterised in that：Described
One switch pipe unit（11）Including first switch pipe M4 and second switch pipe M5, the first switch pipe M4 is opened with described second
Close pipe M5 to be connected to produce first bias voltage, the first switch pipe M4 connections control power end, the second switch
Pipe M5 accesses the tail current circuit bias module（2）Second bias voltage of feedback.
3. the VCO biasing circuits according to claim 2 with anti-single particle effect function, it is characterised in that：Described
Two switch pipe units（21）Including the 3rd switching tube M6, the 4th switching tube M7, the 3rd switching tube M6 and the described 4th switch
Pipe M7 is connected to produce the 3rd bias voltage, and the 3rd switching tube M6 connections control power end, and the 4th switching tube M7 connects
Enter the tail current circuit bias module（2）Second bias voltage of feedback.
4. the VCO biasing circuits according to claim 3 with anti-single particle effect function, it is characterised in that：It is described negative
Carry resistance biasing module（1）Pass through the grid and the tail current circuit bias module of the second switch pipe M5（2）In the 4th
Switching tube M7 grid connects to access the tail current circuit bias module（2）Second bias voltage of feedback.
5. the VCO biasing circuits according to claim 1 with anti-single particle effect function, it is characterised in that：Described
One switch pipe unit（11）Including two switching branches, every switching branches include two switching tubes being connected with each other, and
One of switching tube connection control power end, another switching tube accesses the tail current circuit bias module（2）Feedback
Pass through the first filter unit between second bias voltage, two switching branches（12）Connect to export first biased electrical
Pressure.
6. the VCO biasing circuits according to claim 5 with anti-single particle effect function, it is characterised in that：Described
One filter unit（12）Including two resistance R and electric capacity C, two resistance R one end is connected respectively described in one
Switching branches, the other end is connected to export first bias voltage with the electric capacity C.
7. the VCO biasing circuits with anti-single particle effect function according to any one in claim 1~6, it is special
Levy and be：The tail current circuit bias module（2）Also include and the second switch pipe unit（21）The amplifying unit of connection
（22）, the amplifying unit（22）Access the second switch pipe unit（21）The first bias voltage produced, after output amplification
Bias voltage.
8. the VCO biasing circuits according to claim 7 with anti-single particle effect function, it is characterised in that：It is described to put
Big unit（22）Including difference amplifier A2, the normal phase input end of the difference amplifier A2 accesses first bias voltage,
Inverting input Access Control power supply Vc.
9. the VCO biasing circuits with anti-single particle effect function according to any one in claim 1~6, it is special
Levy and be：The tail current circuit bias module（2）Output end be additionally provided with the second filter unit（23）, pass through described second
Filter unit（23）Second bias voltage is exported after filtering.
10. the VCO biasing circuits according to claim 9 with anti-single particle effect function, it is characterised in that：Described
Two filter units（23）Put for RC low pass filters, including described in resistance R1 and electric capacity M8, the resistance R1 one end connection
Big unit（22）Output end, the other end is grounded by the electric capacity M8.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710368033.5A CN107241090B (en) | 2017-05-23 | 2017-05-23 | VCO (voltage controlled oscillator) bias circuit with single event effect resistance function |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710368033.5A CN107241090B (en) | 2017-05-23 | 2017-05-23 | VCO (voltage controlled oscillator) bias circuit with single event effect resistance function |
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| CN107241090B CN107241090B (en) | 2020-12-22 |
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| CN107241090B (en) | 2020-12-22 |
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