CN101572546A - Differential voltage-controlled oscillator (VCO) circuit structure for reinforcing single-event transients (SET) - Google Patents
Differential voltage-controlled oscillator (VCO) circuit structure for reinforcing single-event transients (SET) Download PDFInfo
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- CN101572546A CN101572546A CN 200910043637 CN200910043637A CN101572546A CN 101572546 A CN101572546 A CN 101572546A CN 200910043637 CN200910043637 CN 200910043637 CN 200910043637 A CN200910043637 A CN 200910043637A CN 101572546 A CN101572546 A CN 101572546A
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Abstract
The invention discloses a differential voltage-controlled oscillator (VCO) structure for reinforcing single-event transients (SET). In order to improve the anti-SET capability of the conventional symmetrical-load VCO structure, the invention has two improvements that: first, tail current tube drain Vp of all delay units are in a short circuit so as to improve the immunity of a VCO circuit to SET effect; and second, two diode-connected PMOS pipes in symmetrical loads are cross-coupled and connected so as to ensure that the output of the VCO structure after the Vp short circuit still has differential characteristics. The SET sensitivity of the improved VCO is greatly reduced. The structure can effectively improve anti-SET capability, and also has the characteristics of simple structure, high working frequency and good linearity.
Description
Technical field
The present invention is mainly concerned with voltage controlled oscillator (VCO) design field in single-event transients (SET) the reinforcing phase-locked loop circuit, refers in particular to a kind of differential voltage controlled oscillator (VCO) circuit structure that single-event transients (SET) is reinforced that is used for.
Background technology
(Voltage-controlled-Oscillator VCO) is mainly used in circuit such as clock generating, frequency multiplication and frequency synthesis to voltage controlled oscillator.In radiation environment, the orbit space of satellite transit for example, the electronic equipment that has voltage controlled oscillator (VCO) circuit module very easily is subjected to the influence of single particle effect.Single-event transients, it is a kind of effect that causes by the responsive node of high-energy particle bombardment circuit, because bombardment back particle energy deposition causes ionization by collision, the electron-hole pair that ionization goes out is transmitted and collects under the effect of transistor electric field and concentration gradient, make output voltage or electric current produce temporary fluctuation, thereby cause PLL to produce wrong clock signal.
For conventional balanced load delay cell (as shown in Figure 1), as the PMOS of high-energy particle bombardment differential delay unit pipe M5, M6, during the drain electrode of M3 or M4, thereby high energy particle can wholely pass through the drain electrode that makes metal-oxide-semiconductor on the track ionization that bumps and produces electron-hole pair at it, electron-hole pair in the PMOS pipe electric field and the effect of concentration gradient under be transmitted and collect, cause the instantaneous rapid rising of voltage of the differential output nodes OUT+ or the OUT-of voltage controlled oscillator (VCO), make voltage controlled oscillator (VCO) output clock be ahead of reference clock, thereby produce phase difference; Otherwise, when the middle NMOS of high energy single-particle bombardment differential delay unit manages the drain electrode of M1 or M2, high energy particle can make the drain electrode of the metal-oxide-semiconductor ionization that bumps produce electron-hole pair simultaneously equally, electron-hole pair in the NMOS pipe electric field and the effect of dense gradient under be transmitted and collect, cause the instantaneous rapid decline of voltage of the differential output nodes OUT+ or the OUT-of voltage controlled oscillator (VCO), cause voltage controlled oscillator (VCO) output clock to lag behind the reference clock of PFD, equally also can produce phase difference.
Summary of the invention
The problem to be solved in the present invention is: at the technical problem that prior art exists, the invention provides a kind of simple in structure, operating frequency is high and the linearity is good is used for differential voltage controlled oscillator (VCO) structure that single-event transients (SET) is reinforced.
In order to improve anti-single particle transition (SET) ability of voltage controlled oscillator (VCO), the present invention proposes a kind of single-event transients (SET) and reinforce voltage controlled oscillator (VCO) structure (as shown in Figure 4), it is by N
The unit cascaded composition of individual differential delay.This structure is passed through the drain electrode Vp short circuit of the electric current source capsule M7 of each delay cell together.At first, increased the electric capacity of Vp node, made the voltage of Vp be difficult for fluctuation, voltage and current is all more stable; Secondly, the electric current that single-event transients (SET) causes in the voltage controlled oscillator (VCO) is changed into N delay cell and is shared, and can obviously reduce the SET response in each voltage controlled oscillator VCO; The 3rd, owing to being shorted to, a plurality of current sources improved restoring current together, reduced recovery time.In addition, be to guarantee the difference output characteristic of voltage controlled oscillator (VCO), PMOS pipe M5 that diode in the balanced load structure is connected and M6 couple together (as shown in Figure 3) in cross-linked mode.
Anti-single particle transition (SET) ability is meant that electronic equipment has immunity to radiation effect, can not change the ability of electrical characteristic in radiation environment.If when an electronic equipment was bombarded by high energy particle, its functional characteristic was not changed, we can say that then this electronic equipment has anti-SET ability.Therefore, differential voltage controlled oscillator (VCO) structure of the present invention's proposition has better anti-single particle transition (SET) ability than symmetrical load voltage controlled oscillator (VCO) structure.
For realizing above-mentioned technical problem, the solution that the present invention proposes is: a kind of differential voltage controlled oscillator (VCO) structure that is used for the radiation hardened voltage controlled oscillator, its loop is characterised in that: difference output OUT-and OUT+ that the difference input IN+ of first differential delay unit and IN-connect N differential delay unit respectively, second difference output OUT+ and OUT-that connects previous differential delay unit respectively to the difference input IN+ and the IN-of N differential delay unit, the control voltage of each differential delay unit all connects control voltage Vcont port, and the drain electrode Vp short circuit of the electric current source capsule M7 of each delay cell together, thus form annular differential voltage controlled oscillator (VCO) structure.Its differential delay element characteristic is: it comprises that a NMOS pipe M1, the 2nd NMOS pipe M2, the 3rd NMOS pipe M7, a PMOS pipe M3, the 2nd PMOS pipe M4, the 3rd PMOS pipe M5, the 4th PMOS manage M6, wherein NMOS pipe M1 and the 2nd NMOS pipe M2 form differential pair tube, its grid meets difference input IN+ and IN-respectively, drain electrode meets differential output nodes OUT-and OUT+ respectively, the 3rd NMOS pipe M7 is tail current source, its grid meets Vb, mainly is to guarantee current source current periodically distribution between M1 and M2.The PMOS pipe M3 and the 2nd PMOS pipe M4 that are used to control differential delay are connected between differential output nodes OUT-, OUT+ and the supply voltage VDD, grid all connects control voltage, cross-linked the 3rd PMOS pipe M5 and the 4th PMOS pipe M6 drain electrode meet difference output OUT-and OUT+ respectively, grid meets difference output OUT+ and OUT-respectively, the one PMOS pipe M3 and the 3rd PMOS pipe M5 compose in parallel the composite load of delay cell, and the 2nd PMOS pipe M4 and the 4th PMOS pipe M6 compose in parallel composite load.
Compared with prior art, the invention has the advantages that:
1, reduced the sensitiveness of voltage controlled oscillator (VCO) to single-event transients (SET).Compare with balanced load differential voltage controlled oscillator (VCO) structure, the drain electrode short circuit of all delay cell current sources of the present invention has improved the inhibition ability to single-event transients (SET).
2, improved operating frequency.Compare with balanced load differential delay unit, the present invention adopts the cross-couplings of positive feedback form to connected mode, has reduced the bound-time of OUT+ and OUT-, has improved the operating frequency of voltage controlled oscillator (VCO).
3, improve the stability of current source.Compare with balanced load differential delay unit, the present invention adopts the Vp short circuit together, has increased the drain electrode direct-to-ground capacitance of current source, has reduced the shake of this node voltage.
Description of drawings
Fig. 1 is a balanced load delay unit circuit structural representation;
Fig. 2 is balanced load voltage controlled oscillator (VCO) structural representation;
Fig. 3 is a differential delay element circuit structural representation of the present invention;
Fig. 4 is differential voltage controlled oscillator of the present invention (VCO) structural representation;
Embodiment
Below with reference to the drawings and specific embodiments the present invention is described in further details.
As shown in Figure 4, the present invention is used for differential voltage controlled oscillator (VCO) structure that voltage controlled oscillator is reinforced in anti-single particle transition (SET), and it is made up of a plurality of differential delays unit, and all short circuit is together for the drain electrode Vp of the tail current source capsule M7 of all delay cells.The structure of its delay cell as shown in Figure 3, it comprises that a NMOS pipe M1, the 2nd NMOS pipe M2, the 3rd NMOS pipe M7, a PMOS pipe M3, the 2nd PMOS pipe M4, the 3rd PMOS pipe M5, the 4th PMOS manage M6.Wherein, the one NMOS pipe M1 and the 2nd NMOS pipe M2 form differential pair tube, its grid meets difference input IN+ and IN-respectively, cross-linked metal-oxide-semiconductor M5 and M6 drain electrode meet difference output OUT-and OUT+ respectively, grid meets difference output OUT+ and OUT-respectively, thereby guarantees the difference characteristic in voltage controlled oscillator (VCO) output together time of Vp short circuit.Be used for postponing to control PMOS pipe M3 and the 2nd PMOS pipe M4 is connected between differential output nodes OUT-, OUT+ and the supply voltage VDD, voltage Vcont connects the grid of PMOS pipe M3 and the 2nd PMOS pipe M4.When the drain electrode of the drain electrode of high energy particle bombardment PMOS pipe or NMOS pipe, the moment shake takes place in the voltage of output node, causes the conducting electric current of difference input pipe to increase Δ I
DS, but because big a lot of before the current ratio Vp short circuit of current source, thus Δ I reduced
DSInfluence to voltage controlled oscillator (VCO) output.
Operation principle: for differential delay: when OUT+ by low level when being the high level saltus step, the 3rd PMOS manages M5
Be turned off gradually, the electric current of the M5 of the 3rd PMOS pipe of flowing through reduces, and NMOS pipe M1 is constant when the discharge capability of OUT-is begun, thereby quickens OUT-to low transition; The reduction of OUT-electromotive force has increased the electric current of the 6th PMOS pipe conversely again, thereby has quickened the OUT+ node to the high level saltus step.
Differential voltage controlled oscillator (VCO) for single-event transients (SET) reinforcing: the time not the drain electrode short circuit of electric current source capsule M7, during single delay cell generation single-event transients (SET), it consumes the size of current decision of the ability of deposited charge by this delay cell itself; And behind the short circuit, when SET takes place in single delay cell, the response of SET become by the size of current decision of an original delay cell has N delay cell to determine jointly, Vp reduces the sensitiveness of SET, the voltage and current of this node is more stable, thereby has improved anti-single particle transition (SET) ability of voltage controlled oscillator (VCO).
Claims (2)
1, a kind of differential voltage controlled oscillator (VCO) structure that is used for single-event transients (SET) reinforcing, by N unit cascaded the forming of differential delay, loop is characterised in that: the difference of first differential delay unit input (IN+) and the difference that (IN-) connects N differential delay unit are respectively exported (OUT-) and (OUT+), export (OUT+) and (OUT-) to the difference of N delay cell input (IN+) and the difference that (IN-) connects previous delay cell respectively for second, control voltage (Vcont) inserts (Vcont) port of each differential delay unit, drain electrode (Vp) short circuit of the electric current source capsule (M7) of all delay cells together, thereby form annular difference VCO structure.
2, be used to form the differential delay unit that SET reinforces voltage controlled oscillator (VCO) according to claim 1, it is characterized in that: it comprises NMOS pipe (M1), the 2nd NMOS manages (M2), the 3rd NMOS manages (M7), the one PMOS manages (M3), the 2nd PMOS manages (M4), the 3rd PMOS manages (M5), the 4th PMOS manages (M6), wherein NMOS pipe (M1) and the 2nd NMOS pipe (M2) is formed differential pair tube, its grid connects difference input (IN+) and (IN-) respectively, drain electrode connects differential output nodes (OUT-) and (OUT+) respectively, the 3rd NMOS pipe (M7) is tail current source, its grid meets (Vb), mainly be that the assurance current source current is periodically distributed at (M1) with (M2), being used to control the PMOS pipe (M3) of differential delay and the 2nd PMOS manages (M4) and is connected on differential output nodes (OUT-), (OUT+) and between the supply voltage VDD, grid all connects control voltage, cross-linked the 3rd PMOS pipe (M5) and the 4th PMOS pipe (M6) drain electrode connect difference respectively and export (OUT-) and (OUT+), grid connects difference output (OUT+) and (OUT-) respectively, the one PMOS pipe (M3) and the 3rd PMOS pipe (M5) compose in parallel the composite load of delay cell, and the 2nd PMOS pipe (M4) and the 4th PMOS pipe (M6) compose in parallel composite load.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200910043637 CN101572546A (en) | 2009-06-09 | 2009-06-09 | Differential voltage-controlled oscillator (VCO) circuit structure for reinforcing single-event transients (SET) |
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| CN 200910043637 CN101572546A (en) | 2009-06-09 | 2009-06-09 | Differential voltage-controlled oscillator (VCO) circuit structure for reinforcing single-event transients (SET) |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101958713A (en) * | 2010-09-28 | 2011-01-26 | 中国人民解放军国防科学技术大学 | Triple-modular redundancy technology-based single event transient (SET) reinforcement differential voltage-controlled oscillator (VCO) |
| CN102082568A (en) * | 2010-11-17 | 2011-06-01 | 北京时代民芯科技有限公司 | Anti-single event transient circuit |
| WO2013078636A1 (en) * | 2011-11-30 | 2013-06-06 | 中国科学院微电子研究所 | Multi-phase clock signal generation circuit |
| CN105119596A (en) * | 2015-07-29 | 2015-12-02 | 西北工业大学 | Voltage-controlled oscillator time delay unit used for phase-locked loops and based on single even transient radiation-hardened effects |
| CN107241090A (en) * | 2017-05-23 | 2017-10-10 | 中国人民解放军国防科学技术大学 | A kind of VCO biasing circuits with anti-single particle effect function |
| CN107404301A (en) * | 2016-05-20 | 2017-11-28 | 英飞凌科技股份有限公司 | Apparatus and method for signal coupling |
| CN108462471A (en) * | 2018-02-12 | 2018-08-28 | 中国科学院上海微系统与信息技术研究所 | A kind of voltage-controlled oscillator circuit based on SOI technology |
| CN109428568A (en) * | 2017-08-31 | 2019-03-05 | 爱思开海力士有限公司 | The method of semiconductor devices and arrangement ring oscillator with ring oscillator |
| CN113098504A (en) * | 2021-04-19 | 2021-07-09 | 杭州优智联科技有限公司 | Method and device for controlling power consumption in phase-locked loop and phase-locked loop equipment |
-
2009
- 2009-06-09 CN CN 200910043637 patent/CN101572546A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101958713A (en) * | 2010-09-28 | 2011-01-26 | 中国人民解放军国防科学技术大学 | Triple-modular redundancy technology-based single event transient (SET) reinforcement differential voltage-controlled oscillator (VCO) |
| CN101958713B (en) * | 2010-09-28 | 2012-01-18 | 中国人民解放军国防科学技术大学 | Triple-modular redundancy technology-based single event transient (SET) reinforcement differential voltage-controlled oscillator (VCO) |
| CN102082568A (en) * | 2010-11-17 | 2011-06-01 | 北京时代民芯科技有限公司 | Anti-single event transient circuit |
| CN102082568B (en) * | 2010-11-17 | 2012-08-22 | 北京时代民芯科技有限公司 | Anti-single event transient circuit |
| WO2013078636A1 (en) * | 2011-11-30 | 2013-06-06 | 中国科学院微电子研究所 | Multi-phase clock signal generation circuit |
| US8963605B2 (en) | 2011-11-30 | 2015-02-24 | Institute of Microelectronics, Chinese Academy of Sciences | Multi-phase clock signal generation circuits |
| CN105119596A (en) * | 2015-07-29 | 2015-12-02 | 西北工业大学 | Voltage-controlled oscillator time delay unit used for phase-locked loops and based on single even transient radiation-hardened effects |
| CN105119596B (en) * | 2015-07-29 | 2018-10-26 | 西北工业大学 | Phaselocked loop voltage controlled oscillator delay unit based on anti-single particle Transient irradiation effects |
| CN107404301A (en) * | 2016-05-20 | 2017-11-28 | 英飞凌科技股份有限公司 | Apparatus and method for signal coupling |
| CN107404301B (en) * | 2016-05-20 | 2021-06-15 | 英飞凌科技股份有限公司 | Apparatus and method for signal coupling |
| CN107241090A (en) * | 2017-05-23 | 2017-10-10 | 中国人民解放军国防科学技术大学 | A kind of VCO biasing circuits with anti-single particle effect function |
| CN109428568A (en) * | 2017-08-31 | 2019-03-05 | 爱思开海力士有限公司 | The method of semiconductor devices and arrangement ring oscillator with ring oscillator |
| CN109428568B (en) * | 2017-08-31 | 2022-12-02 | 爱思开海力士有限公司 | Semiconductor device having ring oscillator and method of arranging ring oscillator |
| CN108462471A (en) * | 2018-02-12 | 2018-08-28 | 中国科学院上海微系统与信息技术研究所 | A kind of voltage-controlled oscillator circuit based on SOI technology |
| CN113098504A (en) * | 2021-04-19 | 2021-07-09 | 杭州优智联科技有限公司 | Method and device for controlling power consumption in phase-locked loop and phase-locked loop equipment |
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