CN107240623B - Surface phasmon and interface cooperate with the preparation method of enhanced monocrystalline silicon battery - Google Patents
Surface phasmon and interface cooperate with the preparation method of enhanced monocrystalline silicon battery Download PDFInfo
- Publication number
- CN107240623B CN107240623B CN201710449371.1A CN201710449371A CN107240623B CN 107240623 B CN107240623 B CN 107240623B CN 201710449371 A CN201710449371 A CN 201710449371A CN 107240623 B CN107240623 B CN 107240623B
- Authority
- CN
- China
- Prior art keywords
- preparation
- passivation layer
- silicon
- layer
- phasmon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000002161 passivation Methods 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 238000005245 sintering Methods 0.000 claims abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000005566 electron beam evaporation Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 238000002207 thermal evaporation Methods 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 235000008216 herbs Nutrition 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 230000033228 biological regulation Effects 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 1
- 239000010436 fluorite Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 abstract description 18
- 230000005669 field effect Effects 0.000 abstract description 4
- 239000002105 nanoparticle Substances 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 238000000137 annealing Methods 0.000 abstract description 2
- 239000013528 metallic particle Substances 0.000 abstract description 2
- 229910000510 noble metal Inorganic materials 0.000 abstract description 2
- 238000013082 photovoltaic technology Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 8
- 239000002023 wood Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 4
- 229910001868 water Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002082 metal nanoparticle Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 1
- 230000005945 translocation Effects 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention belongs to photovoltaic technology field, the preparation method of specially a kind of surface phasmon and the enhanced monocrystalline silicon battery of interface collaboration.The present invention prepares the metallic particles (diameter < 100nm) being embedded on silica in passivation layer using thermal annealing revulsion, the metal film being deposited under battery sintering temperature can be heat-shrinked into nano particle, effectively sunlight wave band of the capture resonant wavelength near near ultraviolet, generate photo-generate electron-hole pairs, then the interface field-effect by silicon dioxide passivation layer to n-type silicon, photo-generate electron-hole pairs are pulled open, additional photoelectric current is formed, promote the photoelectric respone of battery；The silica of this noble metal anteposition embedded structure simultaneously, can be regarded as outstanding field-effect passivation layer.
Description
Technical field
The invention belongs to photovoltaic technology field, and in particular to a kind of preparation method of monocrystaline silicon solar cell.
Background technique
Surface plasma body resonant vibration (Surface plasmon resonance, SPR), also known as surface phasmon are total
Vibration, is a kind of physical optics phenomenon, related instrument and application technology have become physics, chemistry and biology study it is important
Tool.By constructing a surface being made of metal nanoparticle, realizes the surface plasma resonance of local fields, be incident on Jie
The intrinsic wave vector of evanescent waves and metal (nano particle) plasma on matter surface easily matches, to reach resonance, Yu Teding
Wavelength at light absorption greatly enhance.
The phenomenon that surface plasma body resonant vibration reason early in 1902 just by Wood in laboratory observation to but very one section long
In time, which all can be well used, and foremost utilization surely belongs to the surface of the seventies and eighties in last century
Enhance Raman scattering (SERS), in recent years, SPR effect gradually starts to show fine new vitality again, is especially promoting the sun
There is significant role in the fields such as energy battery efficiency, it is considered to be a technique for development potential.But the effect of SPR effect
Apart from fairly limited, often only tens nanometers.Therefore the enhanced solar battery of SPR is mostly amorphous silicon film battery, and
With very difficult in the thicker crystal silicon battery of substrate.The influx and translocation of metal not only can not useful effect to interface, Er Qieyi
Denier can destroy PN junction in battery sintering processes, cause to open a way close to interface because metal has heated misty diffusion effect mostly
The decline of voltage.And since metal itself is used as a kind of deep energy level complex centre in silicon materials, it will cause short circuit current
Decline, influence photronic photoelectric conversion performance.Therefore Many researchers are often by metal bulky grain (diameter > 100nm)
It is placed in outside batteries even electrode exterior, makes full use of the scattering effect of large scale surface phasmon, realizes that all band subtracts
Reflection.However this substantial income of method is not high, and is easy to by novel antireflectives such as physical surface making herbs into wool, black silicon technologies
Technology is substituted.The near-field effect of small size surface phasmon how is efficiently used, realizes and promotes specific band, especially silicon
Battery responds weaker near ultraviolet, the photoelectric properties of near infrared band, is a very challenging technique and physical problem.
Summary of the invention
It is an object of the invention to propose the monocrystalline silicon sun of a kind of surface phasmon and interface chemiluminescence
The preparation method of energy battery.
Medium side due to that can generate SPR phenomenon is defined as negative and low-k noble metal, such as gold, silver, or
The base metals such as aluminium.Thus preparation method is often relatively difficult, typically prepares the method such as physics of these metal nanoparticles
The energetic ion of method injects, and the exchange of particles of wet chemistry method requires special instrument.The present invention and traditional monocrystalline silicon battery
Process matching prepares the metallic particles (diameter < 100nm) being embedded on silica in passivation layer using thermal annealing revulsion,
The metal film being deposited under battery sintering temperature can be heat-shrinked into nano particle, effectively capture resonant wavelength near near ultraviolet
Sunlight wave band generates photo-generate electron-hole pairs, the then interface field-effect by silicon dioxide passivation layer to n-type silicon, by photoproduction
Electron hole pair pulls open, and forms additional photoelectric current, promotes the photoelectric respone of battery.Specific step is as follows for its preparation:
(1) polishing both surfaces are chosen, resistivity is the monocrystalline substrate of 1-10 Ω cm；The monocrystalline substrate volume can be
10×10×0.2mm3-25×25×0.2mm3。
(2) substrate is immersed in hydrofluoric acid solution, removes the oxide layer on surface；Hydrofluoric acid solution mass concentration can be
5%-10%。
(3) substrate for taking out oxide layer, is dried up sample surfaces with nitrogen gun, carries out surface-texturing；It can specifically incite somebody to action
Its NaOH/Alcohol/H for being placed in 85 DEG C -95 DEG C210-20 minutes in O (0.5g/200ml/200ml) mixed solution；
In the step, the surface-texturing should uniformly, and making herbs into wool silicon face should have 30% reflectivity below, for example, 15-
30%；
In the step, nitrogen gun head does not select metal material generally, and metal ion or metallic atom is prevented to be stranded in silicon
Substrate surface influences less sub- device performance.
(4) with deionized water that its surface washing is clean, carry out APM (SC-1) RCA standard cleaning；
In the step, APM (SC-1) cleaning is identical with standard step, i.e., substrate is placed in the 1 of 30 °C -80 °C:
The NH of 1:1 proportion4OH/ H2O2 /H210-20 minutes in O mixed solution, takes out and be washed with deionized water, the drying of plastics nitrogen gun
For use.
(5) P silicon N diffusion is carried out under spin coating phosphorus ink and protective atmosphere, removes dead layer with hydrofluoric acid solution；
The specific behaviour of the step can be used as: spin coating phosphorus ink simultaneously carries out 20 minutes to 2 under 860-900 DEG C of nitrogen protection atmosphere
The N diffusion of hour, cools down 2 hours or more (for example, 2-4 hours) later, removes dead layer with 5%-10% hydrofluoric acid solution；
It in the step, is carried out in the high temperature dispersing furnace of cooling procedure after a loss of power, it is therefore an objective to be formed preferable linear gradual
Shallow junction；
In the step, the time required to removal dead layer, before whether returning to diffusion depending on phosphoric acid glass cleaning back substrate surface color
Flannelette color is standard.
(6) at the PN junction back side that preparation is completed, deposited by electron beam evaporation grows aluminium oxide and carries on the back passivation layer, grows aluminium with thermal evaporation
Back electrode；
In the step, back passivation layer thickness is 10nm-20nm, and back electrode is with a thickness of 2 μm or more (for example, 2-10 μm)；
In the step, it is, for example, 0.05-0.1 nm/s that 0.1nm/s(, which is not to be exceeded, in the evaporation rate for carrying on the back passivation layer), back electricity
It is, for example, 5-10 nm/s that 10nm/s(, which is not to be exceeded, in the evaporation rate of pole)；
In the step, prepares back electrode also and the conventional single-crystal silicons battery electrode techniques such as brushing silver, aluminium paste can be selected.
(7) in the PN junction front that preparation is completed, deposited by electron beam evaporation and thermal evaporation growth wrap up the two of surface phasmon
For silica as upper passivation layer, deposited by electron beam evaporation grows ITO as top electrode；
In the step, the passivation layer is multilayered structure: 4-8nm silica, 4-8nm metal phasmon layer, 10-
20nm silica powers on extremely 70-100nm ITO；The preferred 5nm silica of passivation layer, 5nm metal phasmon layer,
15nm silica；Power on highly preferred 80nm ITO；
In the step, the metal phasmon (metallic diaphragm in silica) can be silver, be also possible to gold
Or aluminium etc. other can with silica dioxide medium generate local SP resonant check metal, golden resonant check wave band is in 500-
600nm, the resonant check wave band of aluminium is in 350nm or less.Its structure is identical as schematic diagram.Metal phasmon thickness degree 5nm；
In the step, it is, for example, 0.01-0.1nm/s that 0.1nm/s(, which is not to be exceeded, in the evaporation rate of upper passivation layer), silverskin
It is, for example, 0.01-0.03nm/s that 0.03nm/s(, which is not to be exceeded, in evaporation rate), the evaporation rate of ITO top electrode is not to be exceeded
0.3nm/s(is, for example, 0.01-0.03nm/s), device performance is influenced to prevent film consistency from changing；
In the step, controlled by position of the regulation silverskin in silicon dioxide passivation layer surface phasmon effect away from
From.From N Qu Yueyuan, operating distance is long, but influence when sintering to PN junction is smaller.Closer from the area N, operating distance is short, SP effect
It is stronger, but the line diffusion of silver will affect PN junction when sintering, reduce the open-circuit voltage of battery；
In the step, silk-screen printing technique is also can be selected in preparation top electrode.
(8) sintering processes under nitrogen protection atmosphere are carried out to the monocrystalline silicon battery of completion.
In this method, the equipment used includes superclean bench, tubular diffusion furnace, tube type resistance furnace, desk-top sol evenning machine,
Thermostatted water liquid furnace, high vacuum coating unit, electronic balance, plastics nitrogen gun etc..
Detailed description of the invention
Fig. 1 is battery structure figure.
Fig. 2 is absorption spectra.Wherein a is that silver-colored phasmon 20nm dioxy is inlayed in the silicon wafer for covering 20nm silica and covering
The silicon wafer absorption spectra of SiClx, b are the two difference spectrum.
Fig. 3 is quantum efficiency.
Specific embodiment
Following embodiment is not used in the limitation present invention to illustrate the present invention.
1, raw material and formula
Substrate: polishing both surfaces, resistivity is 10 Ω cm, and volume is 10 × 10 × 0.2mm3Monocrystalline silicon piece, Suzhou is sharp
Material Semiconductor Co., Ltd；
Top electrode: 90:10 high density ITO particle, specification 1-3mm, purity 99.99%, Zhong Nuo green wood Science and Technology Ltd.；
Upper passivation layer: silica dioxide granule, specification 1-3mm, purity 99.999%, Zhong Nuo green wood Science and Technology Ltd.；
Metal surface phasmon material: high-purity Argent grain, specification 1mm, purity 99.999%, middle promise green wood science and technology are limited
Company；(being changed to other high pure metal particles herein, such as gold or aluminium)
Carry on the back passivation layer: alumina particle, specification 1-3mm, purity 99.99%, Zhong Nuo green wood Science and Technology Ltd.；
Back electrode: aluminium wire, diameter 1mm, purity 99.999%, Zhong Nuo green wood Science and Technology Ltd.；
APM (SC-1) cleaning solution: NH4OH/ H2O2 /H2O(50ml/50ml/50ml) mixed solution；
Woolen-making liquid: NaOH/Alcohol/H2O (0.5g/200ml/200ml) mixed solution.
2, processing parameter setting
Preparation condition: room temperature, hundred grades of Clean rooms；
Diffusion temperature: 900 DEG C；
Diffusion duration: 20 minutes
Subsequent cooling parameter: it is cooling in the pipe after power-off, 2 hours
Sintering temperature: 480 DEG C
Sintering duration: 5 minutes.
3, process units
VD650 superclean bench Suzhou purifying equipment Co., Ltd, Soviet Union
SK2-4-100.00 tubular diffusion furnace, Suzhou Rui Cai Semiconductor Co., Ltd
The program-controlled tube type resistance furnace of SK2-4-12, Shanghai Shi Yan electric furnace Co., Ltd
The desk-top sol evenning machine of KW4A, Microelectronic Institute, the Chinese Academy of Sciences
HH-1 thermostatted water liquid furnace, Shanghai Mei Xiang Instrument Ltd.
BMDE500 high vacuum coating unit, tech Co., Ltd, BeiJing ZhongKe.
4, technical process
(1) polishing both surfaces are chosen, resistivity is 10 Ω cm, and volume is 10 × 10 × 0.2mm3Monocrystalline substrate；
(2) substrate is immersed in 10% hydrofluoric acid solution, removes the oxide layer on surface；
(3) substrate for taking out oxide layer, sample surfaces are dried up, place it in 85 DEG C of NaOH/ with nitrogen gun
Alcohol/H220 minutes progress surface-texturings in O (0.5g/200ml/200ml) mixed solution；
(4) with deionized water that its surface washing is clean, carry out APM (SC-1) RCA standard cleaning；
(5) spin coating phosphorus ink and carries out N diffusion in 20 minutes under 900 DEG C of nitrogen protection atmospheres, cooling 2 hours later with
On, dead layer is removed with 10% hydrofluoric acid solution；
(6) at the PN junction back side that preparation is completed, 5 × 10−4Electron beam evaporation plating 20nm aluminium oxide is used under Pa vacuum environment
As back passivation layer, 2 × 10−3Use thermal evaporation that 2 μm of aluminium are deposited as back electrode under Pa vacuum environment；
(7) in the PN junction front that preparation is completed, 5 × 10−4Under Pa vacuum environment with electron beam evaporation plating 5nm silica,
Metal phasmon layer (taking 5nm Ag herein), 15nm silica multilayered structure as upper passivation layer, 5 × 10−4Pa is true
Use thermal evaporation that 80nm ITO is deposited as top electrode under Altitude；
(8) sintering processes under 480 DEG C of nitrogen protection atmospheres are carried out to the monocrystalline silicon battery of completion.
As a result it and analyzes
It has obtained a kind of relative to single silica field-effect passivation layer, the monocrystalline silicon sun of relative efficiency promotion 5.6%
It can battery.If relative to the battery for not making upper surface passivation, relative efficiency can promote 10% or more.Pass through observation quantum effect
Rate curve is it can be found that silver-silica SP, interface field synergy effect improve battery in resonant wavelength 430nm well
Photoelectric conversion performance.The battery structure for testing aluminium-silica SP, interface field synergy effect simultaneously, improves battery
In resonant wavelength 350nm photoelectric conversion performance below.This method preparation process is simple, and prepares with common monocrystalline silicon battery
Technique matches, scale of mass production easy to accomplish.
Claims (9)
1. the preparation method that a kind of surface phasmon and interface cooperate with enhanced monocrystalline silicon battery, which is characterized in that specific
Steps are as follows:
(1) polishing both surfaces are chosen, resistivity is the monocrystalline substrate of 1-10 Ω cm；
(2) substrate is immersed in hydrofluoric acid solution, removes the oxide layer on surface；
(3) substrate for taking out oxide layer, is dried up sample surfaces with nitrogen gun, carries out surface-texturing；
(4) with deionized water that its surface washing is clean, carry out APM (SC-1) RCA standard cleaning；
(5) P silicon N diffusion is carried out under spin coating phosphorus ink and protective atmosphere, removes dead layer with hydrofluoric acid solution；
(6) at the PN junction back side that preparation is completed, deposited by electron beam evaporation grows aluminium oxide and carries on the back passivation layer, with thermal evaporation growth aluminium back electricity
Pole；
(7) in the PN junction front that preparation is completed, the titanium dioxide of deposited by electron beam evaporation and thermal evaporation growth package surface phasmon
For silicon as upper passivation layer, deposited by electron beam evaporation grows ITO as top electrode；
(8) sintering processes under nitrogen protection atmosphere are carried out to the monocrystalline silicon battery of completion.
2. preparation method according to claim 1, which is characterized in that the operation of surface-texturing described in step (3) are as follows:
Place it in 85 DEG C -95 DEG C of NaOH/Alcohol/H210-20 minutes in O mixed solution；Surface-texturing is uniform, making herbs into wool silicon
There is 30% reflectivity below on surface.
3. preparation method according to claim 1 or 2, which is characterized in that the mark of APM (SC-1) RCA described in step (4)
Quasi- cleaning is the 1:1:1 proportion NH that substrate is placed in 30 DEG C -80 DEG C4OH/ H2O2 /H210-20 minutes in O mixed solution,
It takes out and is washed with deionized water, the drying of plastics nitrogen gun is stand-by.
4. preparation method according to claim 3, which is characterized in that the specific behaviour of step (5) grasps are as follows: spin coating phosphorus ink and
The N diffusion that 20 minutes to 2 hours are carried out under 860-900 DEG C of nitrogen protection atmosphere, cools down 2 hours or more, later with 5%-10% hydrogen
Fluorspar acid solution removes dead layer.
5. preparation method according to claim 1,2 or 4, which is characterized in that in step (6), back passivation layer thickness is
10nm-20nm, back electrode is with a thickness of 2 μm or more.
6. preparation method according to claim 5, which is characterized in that in step (6), the evaporation rate of the back passivation layer
No more than 0.1nm/s, the evaporation rate of back electrode is no more than 10nm/s.
7. according to claim 1, preparation method described in 2,4 or 6, which is characterized in that in step (7), described surface etc. is from sharp
The material of member is gold, silver or aluminium or other can generate the metal of local SP resonant check with silica dioxide medium.
8. preparation method according to claim 7, which is characterized in that in step (7), the evaporation rate of upper passivation layer does not surpass
0.1nm/s is crossed, the evaporation rate of phasmon layer is no more than 0.03nm/s, and the evaporation rate of ITO top electrode is no more than 0.3nm/
s。
9. preparation method according to claim 1, which is characterized in that in step (7), by regulation phasmon layer two
Position in silicon oxide passivation layer controls surface phasmon operating distance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710449371.1A CN107240623B (en) | 2017-06-14 | 2017-06-14 | Surface phasmon and interface cooperate with the preparation method of enhanced monocrystalline silicon battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710449371.1A CN107240623B (en) | 2017-06-14 | 2017-06-14 | Surface phasmon and interface cooperate with the preparation method of enhanced monocrystalline silicon battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107240623A CN107240623A (en) | 2017-10-10 |
| CN107240623B true CN107240623B (en) | 2019-08-09 |
Family
ID=59987023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710449371.1A Expired - Fee Related CN107240623B (en) | 2017-06-14 | 2017-06-14 | Surface phasmon and interface cooperate with the preparation method of enhanced monocrystalline silicon battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107240623B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109346536B (en) * | 2018-09-30 | 2020-07-07 | 常州大学 | Contact passivation crystalline silicon solar cell structure and preparation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204424292U (en) * | 2015-03-17 | 2015-06-24 | 常熟理工学院 | A kind of surfaces etc. are from reinforced graphite alkene silica-based solar cell |
| CN105576054A (en) * | 2016-03-23 | 2016-05-11 | 南京大学 | Nanowire intermediate band solar cell structure based on butterfly-shaped plasmon antenna enhancement |
| CN106684199A (en) * | 2017-02-13 | 2017-05-17 | 中北大学 | Ultra-fast detection structure for metal micro Nano supersrtucture surface plasma polariton |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5731478B2 (en) * | 2010-03-19 | 2015-06-10 | 国立大学法人東京工業大学 | Solar cell having a porous structure in which metal nanoparticles are supported in pores |
-
2017
- 2017-06-14 CN CN201710449371.1A patent/CN107240623B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204424292U (en) * | 2015-03-17 | 2015-06-24 | 常熟理工学院 | A kind of surfaces etc. are from reinforced graphite alkene silica-based solar cell |
| CN105576054A (en) * | 2016-03-23 | 2016-05-11 | 南京大学 | Nanowire intermediate band solar cell structure based on butterfly-shaped plasmon antenna enhancement |
| CN106684199A (en) * | 2017-02-13 | 2017-05-17 | 中北大学 | Ultra-fast detection structure for metal micro Nano supersrtucture surface plasma polariton |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107240623A (en) | 2017-10-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Putra et al. | 18.78% hierarchical black silicon solar cells achieved with the balance of light-trapping and interfacial contact | |
| CN105469996B (en) | A kind of perovskite solar cell based on metal nanoparticle modifying interface and preparation method thereof | |
| CN102126724A (en) | Method for preparing silicon nanowire array with smooth surface | |
| Huang et al. | Efficient light harvesting by photon downconversion and light trapping in hybrid ZnS nanoparticles/Si nanotips solar cells | |
| CN101937946B (en) | Surface texture method of solar cell silicon wafer | |
| Salman | Effect of surface texturing processes on the performance of crystalline silicon solar cell | |
| CN102157608A (en) | Method for reducing surface light reflectivity of silicon chip | |
| Srivastava et al. | Antireflective ultra-fast nanoscale texturing for efficient multi-crystalline silicon solar cells | |
| KR20090077274A (en) | Method for fabricating selar cell having semiconductor wafer substrate with nano texturing structure | |
| CN104409322A (en) | Preparation method of sub-wavelength silicon nanowire array | |
| CN102330142A (en) | Preparation method of nano porous antireflection structure on silicon surface | |
| Tang et al. | Cu-assisted chemical etching of bulk c-Si: A rapid and novel method to obtain 45 μm ultrathin flexible c-Si solar cells with asymmetric front and back light trapping structures | |
| CN103887073A (en) | Solar cell based on surface plasma reinforcing principle and preparing method thereof | |
| CN102881462A (en) | Preparation method of ZnO nano rod array/nano grain cluster microballoon sphere composite film | |
| CN108987532A (en) | A kind of preparation method of the N-type tunnel oxide passivating solar battery based on light scattering structure | |
| Es et al. | An alternative metal-assisted etching route for texturing silicon wafers for solar cell applications | |
| CN106684201B (en) | A kind of zinc oxide nano rod/black silicon heterogenous nano photodetectors and preparation method thereof | |
| CN104124286B (en) | A kind of utilization growth noble metals certainly etc. are from primitive nanostructured | |
| CN103022266A (en) | Method for manufacturing novel light-trapping synergetic antireflection structure on basis of LSP (localized surface plasma) effect | |
| CN107240623B (en) | Surface phasmon and interface cooperate with the preparation method of enhanced monocrystalline silicon battery | |
| Huang et al. | Efficiency improvement of silicon nanostructure-based solar cells | |
| CN106158996A (en) | A kind of monocrystalline silicon-based nano inverted pyramid structure back of the body passivating solar battery and preparation method thereof | |
| CN107302040A (en) | The preparation method of Ag nano wire light trapping structures is inlayed based on wet etching silicon face | |
| CN205863350U (en) | Silicon micro-nano structure array photoelectrochemical cell | |
| CN107579133B (en) | A kind of black silion cell of back-contact and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190809 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |