CN107226456A - A kind of hydrogen source device and its manufacture method and Hydrogen Atom Frequency Standard - Google Patents
A kind of hydrogen source device and its manufacture method and Hydrogen Atom Frequency Standard Download PDFInfo
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- CN107226456A CN107226456A CN201710587771.9A CN201710587771A CN107226456A CN 107226456 A CN107226456 A CN 107226456A CN 201710587771 A CN201710587771 A CN 201710587771A CN 107226456 A CN107226456 A CN 107226456A
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- hydrogen
- silicon substrate
- storage material
- source device
- substrate chamber
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
- C01B3/0005—Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes
- C01B3/001—Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes characterised by the uptaking medium; Treatment thereof
- C01B3/0031—Intermetallic compounds; Metal alloys; Treatment thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/26—Automatic control of frequency or phase; Synchronisation using energy levels of molecules, atoms, or subatomic particles as a frequency reference
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/32—Hydrogen storage
Abstract
The present invention proposes a kind of hydrogen source device, hydrogen storage material in silicon substrate chamber is encapsulated in including silicon substrate chamber and under middle pressure condition, the silicon substrate chamber is provided with the outlet that hydrogen source is conveyed to Hydrogen Atom Frequency Standard, and the hydrogen storage material is the hydrogen storage material after the absorption hydrogen in supersaturated hydrogen environment.The present invention proposes a kind of manufacture method of hydrogen source device, including step：Hydrogen storage material is grown under middle pressure condition in silicon substrate chamber；Supersaturated hydrogen is injected into silicon substrate chamber；Silicon substrate chamber is encapsulated；The outlet that hydrogen source is conveyed to Hydrogen Atom Frequency Standard is set on the silicon substrate chamber.The present invention proposes a kind of Hydrogen Atom Frequency Standard, including the hydrogen source device.Hydrogen source is miniaturized in the present invention, meanwhile, hydrogen is recycled in Hydrogen Atom Frequency Standard, the closed loop micro-system of hydrogen source is realized, the inefficient shortcoming of traditional open atom preparation system is solved, promotes Hydrogen Atom Frequency Standard to realize chip-scale volume.
Description
Technical field
The present invention relates to Hydrogen Atom Frequency Standard field, and in particular to a kind of hydrogen source device and its manufacture method and hydrogen atom
Frequency marking.
Background technology
It is well known that time or frequency are one of fundamental physical quantities.Experiment proves that the transition of Micro quantum attitude has stabilization not
The periodic signal become, so that as a kind of time or the standard of frequency measurement, i.e., with the quantum leap of atom microscopic motion
It is used as quantum frequency standard.Accurately timing support our daily life, and the technology relied in our many lives is such as
Mobile phone, internet, satellite navigation system are required for depending on atomic frequency standard accurately timing.
Hydrogen Atom Frequency Standard had very high short-term and long-term frequency stability, at present, with regard to the sample times of more than several seconds
For stability, Hydrogen Atom Frequency Standard is superior.Hydrogen source hydrogen storage number determine the long term life of Hydrogen Atom Frequency Standard, tradition
Hydrogen Atom Frequency Standard is typically by the way of hydrogen bottle storing liquid hydrogen, according to control flow and service life design hydrogen storage
Amount.To ensure the purity of hydrogen source, hydrogen is purified by the way of nickel purifier.Hydrogen source volume is very big, and uncomfortable
For microelectromechanical systems (Micro-electromechanical System, MEMS), and as microelectronics is to nano-electron
The propulsion of technology and the development of the hyperfine process technology of microelectromechanical systems, the miniaturization of Hydrogen Atom Frequency Standard is necessarily to become
Gesture.
The content of the invention
In order to solve the above problems, the invention provides a kind of hydrogen source device and its manufacture method and Hydrogen Atom Frequency Standard.
A kind of hydrogen source device and its manufacture method and Hydrogen Atom Frequency Standard that the present invention is provided, are miniaturized hydrogen source, meanwhile, it is former in hydrogen
Hydrogen is recycled in sub- frequency marking, the closed loop micro-system of hydrogen source is realized, traditional open atom preparation system efficiency is solved
Not high shortcoming, promotes Hydrogen Atom Frequency Standard to realize chip-scale volume.
The technical solution adopted by the present invention is as follows：
A kind of hydrogen source device, for providing hydrogen source, including silicon substrate chamber and the encapsulation under middle pressure condition to Hydrogen Atom Frequency Standard
The hydrogen storage material in silicon substrate chamber, the silicon substrate chamber is provided with the outlet that hydrogen source is conveyed to Hydrogen Atom Frequency Standard, and the hydrogen storage material is
The hydrogen storage material after hydrogen is adsorbed in supersaturated hydrogen environment.Medium pressure state refers to operating pressure 10pa~1000pa's
In the range of.The hydrogen of the absorption includes hydrogen molecule, hydrogen atom, hydride etc..In the exit, hydrogen Spontaneous release.
A kind of above-mentioned hydrogen source device, wherein, the entrance that hydrogen is reclaimed from Hydrogen Atom Frequency Standard is additionally provided with the silicon substrate chamber.Institute
Stating the hydrogen of recovery includes hydrogen molecule, hydrogen atom, hydride etc..
A kind of above-mentioned hydrogen source device, wherein, the porch of the silicon substrate chamber changes device provided with pressure difference, in the silicon substrate
Chamber porch, the pressure difference, which changes device, makes the pressure in silicon substrate intracavitary portion be less than the pressure outside silicon substrate chamber.
A kind of above-mentioned hydrogen source device, wherein, the hydrogen storage material includes non-crystaline amorphous metal hydrogen storage material and/or crystalline alloy
Hydrogen storage material.
A kind of above-mentioned hydrogen source device, wherein, the non-crystaline amorphous metal hydrogen storage material is non-crystaline amorphous metal Ti-Zr-Ni-Cr-V bodies
It is hydrogen storage material.
A kind of above-mentioned hydrogen source device, wherein, the supersaturated hydrogen environment is more than or equal to for density of hydrogen
99.99% hydrogen environment.
A kind of above-mentioned hydrogen source device, wherein, the hydrogen storage material in supersaturated hydrogen environment after absorption hydrogen includes
The non-crystaline amorphous metal Ti-Zr-Ni-Cr-V system hydrogen storage materials are placed in supersaturated hydrogen environment after overactivation under room temperature environment
Middle absorption hydrogen inhales the non-crystaline amorphous metal Ti-Zr-Ni-Cr-V system hydrogen storage materials of hydrogen state to saturation.
A kind of above-mentioned hydrogen source device, wherein, it is described to be placed in supersaturated hydrogen environment under room temperature environment after overactivation
The non-crystaline amorphous metal Ti-Zr-Ni-Cr-V systems hydrogen storage material that middle absorption hydrogen to saturation inhales hydrogen state is in film-form.
A kind of manufacture method of hydrogen source device, comprises the following steps：
Hydrogen storage material is grown under middle pressure condition in silicon substrate chamber；
Supersaturated hydrogen is injected into silicon substrate chamber；
Silicon substrate chamber is encapsulated；
The outlet that hydrogen source is conveyed to Hydrogen Atom Frequency Standard is set on the silicon substrate chamber.
A kind of manufacture method of above-mentioned hydrogen source device, wherein, it is additionally included on the silicon substrate chamber and sets from hydrogen atom frequency
Mark reclaims the entrance of hydrogen.
A kind of manufacture method of above-mentioned hydrogen source device, wherein, the hydrogen storage material include non-crystaline amorphous metal hydrogen storage material and/
Or crystalline alloy hydrogen storage material.
A kind of manufacture method of above-mentioned hydrogen source device, wherein, the non-crystaline amorphous metal hydrogen storage material is non-crystaline amorphous metal Ti-
Zr-Ni-Cr-V system hydrogen storage materials.
A kind of manufacture method of above-mentioned hydrogen source device, wherein, the supersaturated hydrogen is that density of hydrogen is more than or waited
In 99.99% hydrogen.
A kind of manufacture method of above-mentioned hydrogen source device, wherein, it is described that hydrogen storage material is grown in silicon under middle pressure condition
Base chamber includes：The growth under middle pressure condition after overactivation by the non-crystaline amorphous metal Ti-Zr-Ni-Cr-V system hydrogen storage materials
In silicon substrate chamber.
A kind of manufacture method of above-mentioned hydrogen source device, wherein, including：
The non-crystaline amorphous metal Ti-Zr-Ni-Cr-V system hydrogen storage materials, by MPCVD technologies, low-temperature epitaxy growth is in Ti-
Zr-Ni-Cr-V system hydrogen storage material filminesses；
Supersaturated hydrogen is injected into silicon substrate chamber to store up in the non-crystaline amorphous metal Ti-Zr-Ni-Cr-V systems of filminess
Hydrogen material reaches that saturation inhales hydrogen state；
Saturation is inhaled into the non-crystaline amorphous metal Ti-Zr-Ni-Cr-V system hydrogen storage material films of hydrogen state under middle pressure condition
It is encapsulated in silicon substrate chamber.
A kind of manufacture method of above-mentioned hydrogen source device, wherein, the porch for being additionally included in the silicon substrate chamber sets pressure difference
Change device, in the silicon substrate chamber porch, the pressure difference, which changes device, makes the pressure in silicon substrate intracavitary portion be less than outside silicon substrate chamber
Pressure.
A kind of Hydrogen Atom Frequency Standard, wherein, including above-mentioned hydrogen source device.
A kind of hydrogen source device and its manufacture method and Hydrogen Atom Frequency Standard that the present invention is provided, hydrogen source use solid cycle
Formula hydrogen source system, endlessly will be supplied to Hydrogen Atom Frequency Standard by hydrogen, then from the corresponding dress of signal flow of Hydrogen Atom Frequency Standard
Middle recovery is put, is recycled with reaching.The preferred non-crystaline amorphous metal Ti-Zr-Ni-Cr-V system hydrogen storage materials of hydrogen storage material, the material
There is certain hydrogen storage ability at room temperature, by changing environmental pressure or temperature, can be controlled with hydrogen/hydrogen releasing flow is inhaled
The characteristic of system, mechanical characteristic is excellent, can realize the closed loop micro-system of hydrogen source.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, without having to pay creative labor, may be used also
To obtain other accompanying drawings according to these accompanying drawings.
Fig. 1 is a kind of structural schematic block diagram of an embodiment of hydrogen source device of the invention；
Fig. 2 is a kind of structural representation of another embodiment of hydrogen source device of the invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Embodiment
As shown in figure 1, a kind of hydrogen source device, for providing hydrogen source to Hydrogen Atom Frequency Standard, including silicon substrate chamber 10 and in
Hydrogen storage material 20 in silicon substrate chamber 10 is encapsulated under pressure condition, the silicon substrate chamber 10 is provided with to Hydrogen Atom Frequency Standard and conveys going out for hydrogen source
Mouth 11, the hydrogen storage material 20 is the hydrogen storage material after the absorption hydrogen in supersaturated hydrogen environment.Medium pressure state refers to work
Make pressure in the range of 10pa~1000pa.The hydrogen of the absorption includes hydrogen molecule, hydrogen atom, hydride etc..It is described go out
At mouth 11, hydrogen Spontaneous release.
In one embodiment, the entrance 12 that hydrogen is reclaimed from Hydrogen Atom Frequency Standard is additionally provided with the silicon substrate chamber 10.It is described to reclaim
Hydrogen include hydrogen molecule, hydrogen atom, hydride etc..
In one embodiment, change device 40 provided with pressure difference at the entrance 12 of the silicon substrate chamber 10, enter in the silicon substrate chamber
At mouth 12, the pressure difference, which changes device 40, makes the pressure P1 in silicon substrate intracavitary portion be less than the pressure P2 outside silicon substrate chamber.
In one embodiment, the hydrogen storage material includes non-crystaline amorphous metal hydrogen storage material and/or crystalline alloy hydrogen storage material.
In one embodiment, the non-crystaline amorphous metal hydrogen storage material is non-crystaline amorphous metal Ti-Zr-Ni-Cr-V system hydrogen storage materials.
In one embodiment, the supersaturated hydrogen environment is the hydrogen ring that density of hydrogen is more than or equal to 99.99%
Border.
In one embodiment, the hydrogen storage material in supersaturated hydrogen environment after absorption hydrogen includes the non-crystaline amorphous metal
Ti-Zr-Ni-Cr-V system hydrogen storage materials, which are placed under room temperature environment after overactivation in supersaturated hydrogen environment, adsorbs hydrogen to full
With the non-crystaline amorphous metal Ti-Zr-Ni-Cr-V system hydrogen storage materials for inhaling hydrogen state.
In one embodiment, described be placed in after overactivation under room temperature environment in supersaturated hydrogen environment adsorbs hydrogen to full
Non-crystaline amorphous metal Ti-Zr-Ni-Cr-V systems hydrogen storage material with suction hydrogen state is in film-form.
As shown in Fig. 2 in one embodiment, a kind of hydrogen source device, for providing hollow in hydrogen source, figure to Hydrogen Atom Frequency Standard
Arrow shows that a kind of hydrogen source device that the present invention is provided is used for the cyclic process of hydrogen during Hydrogen Atom Frequency Standard.It is described in the present embodiment
Other devices of hydrogen source device and Hydrogen Atom Frequency Standard are encapsulated in total silicon substrate chamber 30, and the hydrogen source device includes silicon substrate chamber
10 and hydrogen storage material 20 in silicon substrate chamber 10 is encapsulated under middle pressure condition, the silicon substrate chamber 10 is provided with defeated to Hydrogen Atom Frequency Standard
Send the entrance 12 for being additionally provided with the outlet 11 of hydrogen source, the silicon substrate chamber 10 and hydrogen being reclaimed from Hydrogen Atom Frequency Standard.The silicon substrate chamber 10
Change device 40 provided with pressure difference at entrance 12, at the silicon substrate chamber entrance 12, the pressure difference, which changes device 40, makes silicon substrate intracavitary
The pressure in portion is less than the pressure outside silicon substrate chamber.
At the outlet 11, hydrogen Spontaneous release.By Hydrogen Atom Frequency Standard other devices processing use after, hydrogen not by
Consumption, due to being packaged in total silicon substrate chamber 30, therefore, hydrogen is in free state, in the presence of pressure difference changes device 40,
At the entrance 12 of silicon substrate chamber 10, the pressure inside the silicon substrate chamber 10 is less than the pressure outside silicon substrate chamber 10, makes silicon substrate chamber 10
Outside hydrogen is entered in silicon substrate chamber 10 by its entrance 12, so as to realize recycling for hydrogen.Hydrogen bag in above-mentioned cyclic process
Include hydrogen molecule, hydrogen atom, hydride etc..
A kind of manufacture method of hydrogen source device, comprises the following steps：
Hydrogen storage material is grown under middle pressure condition in silicon substrate chamber；
Supersaturated hydrogen is injected into silicon substrate chamber；
Silicon substrate chamber is encapsulated；
The outlet that hydrogen source is conveyed to Hydrogen Atom Frequency Standard is set on the silicon substrate chamber.
In one embodiment, the manufacture method of above-mentioned a kind of hydrogen source device, be additionally included on the silicon substrate chamber set from
Hydrogen Atom Frequency Standard reclaims the entrance of hydrogen.
In one embodiment, a kind of manufacture method of above-mentioned hydrogen source device, the hydrogen storage material is stored up including non-crystaline amorphous metal
Hydrogen material and/or crystalline alloy hydrogen storage material.
In one embodiment, a kind of manufacture method of above-mentioned hydrogen source device, the non-crystaline amorphous metal hydrogen storage material is amorphous
Alloy Ti-Zr-Ni-Cr-V system hydrogen storage materials.
In one embodiment, a kind of manufacture method of above-mentioned hydrogen source device, the supersaturated hydrogen is that density of hydrogen is big
In or equal to 99.99% hydrogen.
In one embodiment, the manufacture method of above-mentioned a kind of hydrogen source device, it is described by hydrogen storage material under middle pressure condition
Being grown in silicon substrate chamber includes：By the non-crystaline amorphous metal Ti-Zr-Ni-Cr-V system hydrogen storage materials after overactivation in middle pressure shape
It is grown under state in silicon substrate chamber.
The activation with the addition of Ni, Cr, V element to alloy material, using fast melt-quenching technology, prepare mechanical property
Excellent Ti-Zr-Ni-Cr-V amorphous hydrogen adsorbing alloys.In Ti-Zr-Ni-Cr-V non-crystaline amorphous metals carry out suction experiments Hydrogen, amorphous
The activationary temperature of alloy is 473K.After activated, Ti-Zr-Ni-Cr-V non-crystaline amorphous metals have certain suction Hydrogen Energy at room temperature
Power, hydrogen-sucking amount is 23.6ml/g, and starting (0~1ks) hydrogen-absorption speed is quickly, and room temperature gathers around hydrogen amount for 10.2ml/g, gathers around Hydrogen Energy
Power is strong, is conducive to the application of room temperature operating mode.
In one embodiment, the manufacture method of above-mentioned a kind of hydrogen source device, including：
The non-crystaline amorphous metal Ti-Zr-Ni-Cr-V system hydrogen storage materials, by MPCVD technologies, low-temperature epitaxy growth is in Ti-
Zr-Ni-Cr-V system hydrogen storage material filminesses；
Supersaturated hydrogen is injected into silicon substrate chamber to store up in the non-crystaline amorphous metal Ti-Zr-Ni-Cr-V systems of filminess
Hydrogen material reaches that saturation inhales hydrogen state；
Saturation is inhaled into the non-crystaline amorphous metal Ti-Zr-Ni-Cr-V system hydrogen storage material films of hydrogen state under middle pressure condition
It is encapsulated in silicon substrate chamber.
In one embodiment, the manufacture method of above-mentioned a kind of hydrogen source device, is additionally included in the porch of the silicon substrate chamber
Pressure difference is set to change device, in the silicon substrate chamber porch, the pressure difference, which changes device, makes the pressure in silicon substrate intracavitary portion be less than silicon
Pressure outside base chamber.
A kind of Hydrogen Atom Frequency Standard, wherein, including above-mentioned hydrogen source device.
It is obvious to a person skilled in the art that the application is not limited to the details of above-mentioned one exemplary embodiment, Er Qie
In the case of without departing substantially from spirit herein or essential characteristic, the application can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, scope of the present application is by appended power
Profit is required rather than described above is limited, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the application.Any reference in claim should not be considered as to the claim involved by limitation.This
Outside, it is clear that the word of " comprising " one is not excluded for other units or step, and odd number is not excluded for plural number.That is stated in device claim is multiple
Unit or device can also be realized by a unit or device by software or hardware.The first, the second grade word is used for table
Show title, and be not offered as any specific order.
Certainly, it is obvious to a person skilled in the art that the application is not limited to the details of above-mentioned one exemplary embodiment, and
And in the case of without departing substantially from spirit herein or essential characteristic, the application can be realized in other specific forms.Therefore,
No matter from the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, scope of the present application is by institute
Attached claim rather than described above are limited, it is intended that will fall in the implication and scope of the equivalency of claim
All changes are included in the application.The right that any reference in claim should not be considered as involved by limitation will
Ask.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
God is with principle, and any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (17)
1. a kind of hydrogen source device, for providing hydrogen source to Hydrogen Atom Frequency Standard, it is characterised in that including silicon substrate chamber and in middle pressure shape
Hydrogen storage material in silicon substrate chamber is encapsulated under state, the silicon substrate chamber is provided with the outlet that hydrogen source is conveyed to Hydrogen Atom Frequency Standard, the storage
Hydrogen material is the hydrogen storage material after the absorption hydrogen in supersaturated hydrogen environment.
2. a kind of hydrogen source device according to claim 1, it is characterised in that be additionally provided with the silicon substrate chamber from hydrogen atom frequency
Mark reclaims the entrance of hydrogen.
3. a kind of hydrogen source device according to claim 2, it is characterised in that the porch of the silicon substrate chamber changes provided with pressure difference
Become device, in the silicon substrate chamber porch, the pressure difference, which changes device, makes the pressure in silicon substrate intracavitary portion be less than outside silicon substrate chamber
Pressure.
4. a kind of hydrogen source device according to claim 1, it is characterised in that the hydrogen storage material includes non-crystaline amorphous metal hydrogen storage
Material and/or crystalline alloy hydrogen storage material.
5. a kind of hydrogen source device according to claim 4, it is characterised in that the non-crystaline amorphous metal hydrogen storage material closes for amorphous
Golden Ti-Zr-Ni-Cr-V systems hydrogen storage material.
6. a kind of hydrogen source device according to claim 5, it is characterised in that the supersaturated hydrogen environment is density of hydrogen
Hydrogen environment more than or equal to 99.99%.
7. a kind of hydrogen source device according to claim 6, it is characterised in that described to adsorb hydrogen in supersaturated hydrogen environment
It is underlying in room temperature environment after overactivation that hydrogen storage material afterwards includes the non-crystaline amorphous metal Ti-Zr-Ni-Cr-V system hydrogen storage materials
The non-crystaline amorphous metal Ti-Zr-Ni-Cr-V system hydrogen storage materials that hydrogen inhales hydrogen state to saturation are adsorbed in supersaturated hydrogen environment.
8. a kind of hydrogen source device according to claim 7, it is characterised in that
Described be placed in after overactivation under room temperature environment in supersaturated hydrogen environment adsorbs the amorphous that hydrogen inhales hydrogen state to saturation
Alloy Ti-Zr-Ni-Cr-V systems hydrogen storage material is in film-form.
9. a kind of manufacture method of hydrogen source device, it is characterised in that comprise the following steps：
Hydrogen storage material is grown under middle pressure condition in silicon substrate chamber；
Supersaturated hydrogen is injected into silicon substrate chamber；
Silicon substrate chamber is encapsulated；
The outlet that hydrogen source is conveyed to Hydrogen Atom Frequency Standard is set on the silicon substrate chamber.
10. the manufacture method of a kind of hydrogen source device according to claim 9, it is characterised in that be additionally included in the silicon substrate
The entrance that hydrogen is reclaimed from Hydrogen Atom Frequency Standard is set on chamber.
11. a kind of manufacture method of hydrogen source device according to claim 9 or 10, it is characterised in that the hydrogen storage material
Including non-crystaline amorphous metal hydrogen storage material and/or crystalline alloy hydrogen storage material.
12. a kind of manufacture method of hydrogen source device according to claim 11, it is characterised in that the non-crystaline amorphous metal hydrogen storage
Material is non-crystaline amorphous metal Ti-Zr-Ni-Cr-V system hydrogen storage materials.
13. a kind of manufacture method of hydrogen source device according to claim 12, it is characterised in that the supersaturated hydrogen is
Density of hydrogen is more than or equal to 99.99% hydrogen.
14. a kind of manufacture method of hydrogen source device according to claim 13, it is characterised in that
It is described hydrogen storage material is grown in silicon substrate chamber under middle pressure condition to include：By the non-crystaline amorphous metal Ti-Zr-Ni-Cr-V
System hydrogen storage material is grown in silicon substrate chamber after overactivation under middle pressure condition.
15. a kind of manufacture method of hydrogen source device according to claim 14, it is characterised in that including：
The non-crystaline amorphous metal Ti-Zr-Ni-Cr-V system hydrogen storage materials, by MPCVD technologies, low-temperature epitaxy growth is in Ti-Zr-
Ni-Cr-V system hydrogen storage material filminesses；
Supersaturated hydrogen is injected into silicon substrate chamber to the non-crystaline amorphous metal Ti-Zr-Ni-Cr-V systems hydrogen storage material for being in filminess
Material reaches that saturation inhales hydrogen state；
The non-crystaline amorphous metal Ti-Zr-Ni-Cr-V system hydrogen storage material films that saturation inhales hydrogen state are encapsulated under middle pressure condition
In silicon substrate chamber.
16. the manufacture method of a kind of hydrogen source device according to claim 15, it is characterised in that be additionally included in the silicon substrate
The porch of chamber sets pressure difference to change device, and in the silicon substrate chamber porch, the pressure difference, which changes device, makes silicon substrate intracavitary portion
Pressure is less than the pressure outside silicon substrate chamber.
17. a kind of Hydrogen Atom Frequency Standard, it is characterised in that including the hydrogen source device as described in claim 1-8.
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| CN201710587771.9A CN107226456B (en) | 2017-07-18 | 2017-07-18 | A kind of hydrogen source device and its manufacturing method and Hydrogen Atom Frequency Standard |
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|---|---|---|---|---|
| US4290030A (en) * | 1979-05-29 | 1981-09-15 | Hughes Aircraft Company | Atomic frequency standard using free induction technique |
| CN1043409A (en) * | 1988-12-12 | 1990-06-27 | 洪国修 | Hydrogen gas storage method and chemical composition of hydride electrode material |
| US6255647B1 (en) * | 1999-03-09 | 2001-07-03 | Kernco, Inc. | Atomic frequency standard based on coherent state preparation |
| JP2010245585A (en) * | 2009-04-01 | 2010-10-28 | Seiko Epson Corp | Quantum frequency standard, and time control system |
| CN102563339A (en) * | 2011-12-31 | 2012-07-11 | 北京浩运金能科技有限公司 | Metal hydride hydrogen storing device |
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2017
- 2017-07-18 CN CN201710587771.9A patent/CN107226456B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4290030A (en) * | 1979-05-29 | 1981-09-15 | Hughes Aircraft Company | Atomic frequency standard using free induction technique |
| CN1043409A (en) * | 1988-12-12 | 1990-06-27 | 洪国修 | Hydrogen gas storage method and chemical composition of hydride electrode material |
| US6255647B1 (en) * | 1999-03-09 | 2001-07-03 | Kernco, Inc. | Atomic frequency standard based on coherent state preparation |
| JP2010245585A (en) * | 2009-04-01 | 2010-10-28 | Seiko Epson Corp | Quantum frequency standard, and time control system |
| CN102563339A (en) * | 2011-12-31 | 2012-07-11 | 北京浩运金能科技有限公司 | Metal hydride hydrogen storing device |
Non-Patent Citations (1)
| Title |
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| "《现代科学技术》" * |
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| Publication number | Publication date |
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| CN107226456B (en) | 2019-04-19 |
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