CN107221496B - Surface treatment method for nitride material after laser stripping - Google Patents
Surface treatment method for nitride material after laser stripping Download PDFInfo
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- CN107221496B CN107221496B CN201710384470.6A CN201710384470A CN107221496B CN 107221496 B CN107221496 B CN 107221496B CN 201710384470 A CN201710384470 A CN 201710384470A CN 107221496 B CN107221496 B CN 107221496B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Laser Beam Processing (AREA)
- Led Devices (AREA)
Abstract
A surface treatment method for nitride materials after laser stripping comprises the following steps: preparing a nitride composite substrate or a nitride single crystal substrate in a laser lift-off mode; selecting a cavity, filling volatile corrosive liquid into the cavity, putting a nitride composite substrate or a nitride single crystal substrate above the liquid level in the cavity, sealing the cavity to form a closed cavity, placing the closed cavity for a preset time T, and carrying out corrosion treatment on the surface of the nitride composite substrate or the nitride single crystal substrate subjected to laser stripping by utilizing the atmosphere generated by volatilization of the corrosive liquid; and cleaning and blow-drying the nitride composite substrate or the nitride single crystal substrate in the chamber to finish the atmosphere corrosion treatment of the laser stripping surface. The method utilizes an atmosphere corrosion method to treat the stripped nitride surface, removes impurities such as residual metal and the like on the stripped surface, improves the components and the roughness of the stripped surface, and improves the homoepitaxy effect and the chip performance in the later period.
Description
Technical Field
The invention relates to a surface treatment method of a nitride material after laser stripping.
Background
Representative materials of third-generation semiconductors, particularly GaN and AlN materials, belong to wide bandgap semiconductors, have direct bandgaps of 3.39ev and 6.3ev, and have wide market application prospects in the aspects of semiconductor Light Emitting Diodes (LEDs), Laser Diodes (LDs), ultraviolet detectors, electronic power devices, and the like.
Because the preparation process of the GaN single crystal is complex and expensive, at present, a GaN-based light emitting diode is generally heteroepitaxy on a sapphire substrate with a crystal system structure similar to that of the GaN-based light emitting diode, but the sapphire is insulated and has poor heat conductivity, so that the service life and the luminous efficiency of an LED chip are influenced, the current distribution is uneven, the heat dissipation problem is serious, the hardness is large and difficult to be understood, the chip process is complex, the material utilization rate is low, and the application of the GaN-based light emitting diode on high-temperature and high-power devices is limited. At present, vertical structure LED chips for high power and vertical structure device market have been commercialized, and one of the technology routes that is receiving attention is to transfer a GaN epitaxial thin film grown on a sapphire substrate to a substrate with good thermal and electrical conductivity, such as SiC, Si, AlSi, metal or alloy substrate, by laser lift-off and dielectric bonding technology. The patent application numbers are: 201210068033.0 and patent application nos.: 201210068026.0 discloses a novel composite substrate material product and method of fabrication that combines MOCVD epitaxy, HVPE epitaxy, laser lift-off, bonding techniques to produce a composite substrate material product using micromachining techniques. The technology of removing the sapphire substrate by laser lift-off utilizes that an epitaxial layer and sapphire have different absorption efficiencies to ultraviolet laser, and the sapphire has higher band gap energy (9.9ev), so that the sapphire is transparent to 248nm and 355nm laser, and the GaN has 3.39ev band gap energy and can strongly absorb 248nm and 355nm laser, a thermal explosion shock wave is locally formed, so that the interface of a GaN epitaxial film and the sapphire is separated, and the GaN is decomposed into metal Ga liquid drops and nitrogen gas which are remained on the lift-off surface. Whereas AlN is 6.3ev bandgap energy non-absorbing for 248nm and 355nm lasers, it is necessary to select a 193nm argon fluoride (ArF) excimer laser, and sapphire is also transparent to 193nm laser, with AlN decomposing into metallic Al droplets and nitrogen gas remaining on the lift-off surface after laser lift-off is complete.
Impurities such as metal and the like remaining after laser stripping of the nitride semiconductor substrate and the rough surface caused by the impurities damage the activity of the substrate surface and increase the difficulty of homoepitaxy in the preparation of the heat-conducting and electric-conducting nitride composite substrate and the single crystal substrate, and the leakage current of the device is increased in the preparation of a vertical structure device, so that the light extraction efficiency, the performance and the stability of the device are influenced, and therefore, the surface after laser stripping needs to be subjected to corrosion treatment. At present, two methods are available for surface treatment after laser stripping in the market or scientific research institutions, namely 1) a heating and melting technology is adopted, the melting point of metal Ga is 29.8 ℃, Ga metal can be melted and removed through heating, but heating causes certain damage to a GaN epitaxial film and a bonding dielectric layer, surface defects and crystal quality of a GaN film are obviously increased, and finally, device performance and stability are influenced. 2) The hydrochloric acid soaking method is suitable for surface treatment after stripping nitride such as AlN, GaN and the like, the hydrochloric acid is used for soaking and corrosion, the stripped substrate is placed in liquid, namely, the substrate is completely immersed in liquid, active metals such as Ga, Al and the like can rapidly and violently react to release a large amount of gas, the method has the advantages that the method has very large impact force on the surface of the stripped nitride, the residual stress changes very rapidly, then the internal stress action of an epitaxial wafer is superposed, cracks and even breakage are easily generated on the GaN and AlN thin films, the surface of the substrate is damaged, the difficulty of homoepitaxy is increased, and the industrial development and popularization are hindered.
Disclosure of Invention
The invention aims to solve the technical problem of providing a surface treatment method for nitride materials after laser stripping, which utilizes an atmosphere corrosion method to treat the stripped nitride surfaces, removes impurities such as residual metal and the like on the stripped surfaces, improves the components and the roughness of the stripped surfaces, improves the later homoepitaxy effect and the chip performance, has simple and easy process and has larger market application prospect.
In order to solve the technical problems, the invention adopts the following technical scheme:
a surface treatment method for nitride materials after laser stripping comprises the following steps:
preparing a nitride composite substrate or a nitride single crystal substrate in a laser lift-off mode;
selecting a cavity, filling volatile corrosive liquid into the cavity, putting a nitride composite substrate or a nitride single crystal substrate above the liquid level in the cavity, sealing the cavity to form a closed cavity, placing the closed cavity for a preset time T, and carrying out corrosion treatment on the surface of the nitride composite substrate or the nitride single crystal substrate subjected to laser stripping by utilizing the atmosphere generated by volatilization of the corrosive liquid;
and opening the chamber, cleaning and blow-drying the nitride composite substrate or the nitride single crystal substrate in the chamber, and finishing the atmosphere corrosion treatment of the laser stripping surface.
The nitride composite substrate or the nitride single crystal substrate is placed in a region of 2-5 cm above the liquid level in the chamber.
The predetermined time T of the placement is 15 to 50 minutes.
The corrosive liquid is volatile hydrochloric acid, acetic acid or ammonia water.
And during cleaning, isopropanol, acetone and ultrapure water are used for ultrasonic cleaning.
The chamber includes a housing and a fixing device disposed in the housing for fixing the nitride composite substrate or the nitride single crystal.
A surface treatment method for nitride materials after laser stripping comprises the following steps:
preparing a nitride composite substrate or a nitride single crystal substrate in a laser lift-off mode;
selecting a cavity, placing the nitride composite substrate or the nitride single crystal substrate into the cavity, sealing the cavity to form a closed cavity, introducing corrosive gas into the closed cavity, placing for a preset time T, and corroding the laser-stripped surface of the nitride composite substrate or the nitride single crystal substrate by using the corrosive gas;
and opening the chamber, cleaning and blow-drying the nitride composite substrate or the nitride single crystal substrate in the chamber, and finishing the atmosphere corrosion treatment of the laser stripping surface.
The invention treats the surface of the nitride material after laser stripping through atmosphere corrosion, and has the following characteristics:
the atmosphere corrosion reaction is relatively mild, the method has the characteristics of heating corrosion and liquid soaking corrosion, namely, impurities such as metal on the surface after laser stripping are removed, the stripping surface composition and roughness are effectively improved, in addition, under the condition of effectively ensuring the corrosion efficiency, the huge impact force of a corrosion gas product on a GaN epitaxial film is effectively inhibited, the drastic change of residual stress is avoided, the influence of heat generated in the reaction during the liquid soaking corrosion on the material is reduced, the probability of cracks or fragmentation of the GaN epitaxial film in the surface treatment process after laser stripping is reduced, the yield of the corrosion process after laser stripping is improved, and the method has a good market application prospect.
And secondly, atmosphere corrosion is non-contact surface treatment, so that the GaN epitaxial film, the dielectric layer and the transfer substrate are not damaged, the stability of the bonding structure and the performance of the chip are improved, and the method is particularly suitable for the conditions that the chemical activity of the materials of the dielectric layer and the transfer substrate is high and the residual stress condition is complex.
And thirdly, the atmosphere corrosion can be conducted into the closed device through volatile gases such as hydrochloric acid, or a simple sealed cavity is prepared by using a beaker, the device is simple, the device is hung above the liquid level for corrosion, the gas or liquid in the device is simple, and the gas or liquid can be recycled, so that the cost is obviously reduced.
And fourthly, the method is green and environment-friendly, and the atmosphere corrosion process is carried out in a sealed environment, so that the damage of corrosive gas to the environment and operators is effectively reduced.
And fifthly, the atmosphere corrosion process is simple, easy to use and good in repeatability, can be applied to the surfaces of almost all nitride materials subjected to laser stripping, has a wide application range and simple equipment, can finish the corrosion process under the conditions of room temperature and atmospheric pressure, and can adjust the atmosphere corrosion rate, the surface appearance and the components after corrosion by adjusting the temperature and the atmospheric pressure.
Drawings
FIG. 1 is a schematic view of one embodiment of a chamber for use in the present invention;
FIG. 2 is a schematic view of one embodiment of a chamber for use in the present invention;
FIG. 3 is a schematic view of a process flow of the method of the present invention applied to the preparation of a silicon-based GaN composite substrate;
FIG. 4 is a process flow chart of the method of the present invention applied to the preparation of a quartz-based AlN composite substrate;
FIG. 5 is a flow chart of a process for preparing a WCu-based GaN composite substrate by using the method of the invention;
FIG. 6 is a process flow chart of the method of the present invention applied to the preparation of a MoCu-based LED chip structure;
FIG. 7 is a schematic view showing surface atmosphere treatment after laser lift-off of a GaN single crystal substrate according to the present invention.
Detailed Description
For further understanding of the features and technical means of the present invention, as well as the specific objects and functions attained by the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description.
The invention discloses a surface treatment method of a nitride material after laser stripping, which comprises the following steps:
and S11, preparing the nitride composite substrate or the nitride single crystal substrate in a laser lift-off mode. The nitride composite substrate or the nitride single crystal substrate can be prepared by a conventional preparation method in the field. If the nitride composite substrate is prepared, a nitride film can be epitaxially grown on the sapphire substrate to obtain the sapphire-based nitride composite substrate; bonding the nitride surface and the transfer substrate together by using a bonding medium layer; and stripping the sapphire by adopting a laser stripping technology to form the nitride composite substrate connected to the transfer substrate. And the nitride single crystal substrate is formed by epitaxially growing a nitride film on a sapphire substrate to obtain a sapphire-based nitride composite substrate, and then directly stripping the sapphire by using a laser stripping mode.
S12, selecting a chamber, filling the chamber with a volatile etching liquid, placing the nitride composite substrate or the nitride single crystal substrate above the liquid level in the chamber, sealing the chamber to form a closed chamber, standing for a predetermined time T, and etching the laser-stripped surface of the nitride composite substrate or the nitride single crystal substrate with an atmosphere generated by volatilization of the etching liquid. The corrosive liquid is volatile acid such as hydrochloric acid and acetic acid or alkali such as ammonia water. According to different corrosive liquids, the corrosive liquid is volatilized at normal temperature or under heating condition to generate an atmosphere, and the generated corrosive atmosphere etches the surface of the nitride material after laser stripping to remove impurities such as metal on the surface after laser stripping. The predetermined time of standing may be set to 15-50 minutes.
And S13, opening the chamber, cleaning and blow-drying the nitride composite substrate or the nitride single crystal substrate in the chamber, and completing the atmosphere corrosion treatment of the laser stripping surface. The cleaning was carried out by ultrasonic cleaning using isopropyl alcohol, acetone and ultrapure water.
In addition, the nitride composite substrate or the nitride single crystal substrate is placed in a region of 2 to 5 cm above the liquid surface in the chamber.
The chamber includes a housing and a fixing device disposed in the housing for fixing the nitride composite substrate or the nitride single crystal. The fixing device can be a clamp, as shown in figure 1, a clamping groove 2 is arranged in a shell 1, corrosive liquid 3 is filled in the shell, and the upper end of the clamping groove is positioned above the liquid level to fix nitride on the clamping groove. As shown in fig. 2, an upper jig 4 and a lower jig 5 are provided in the housing, and nitride is fixed between the upper jig and the lower jig. Or other structures, it is only necessary to fix the nitride composite substrate or the nitride single crystal in the chamber, and they are not listed here.
The cavity can be a sealed cavity made of acid and alkali resistant materials such as polytetrafluoroethylene and glass or acid and alkali resistant alloy materials, and tinfoil or other articles are attached to the opening to form a sealed space.
In addition, in the nitride composite substrate, the thickness at the time of epitaxial growth of nitride can be controlled to 10 nm to 10 mm, and preferably 3 μm to 5 mm. The nitride epitaxial layer is any one of or an alloy film of a GaN thin film, an AlN thin film and an InN thin film grown with GaN or AlN as a buffer layer, or an epitaxial wafer and a chip of GaN and AlN.
When the composite substrate made of the nitride is prepared, the thickness of the adopted bonding medium layer is 10 nanometers to 100 micrometers, and the bonding medium layer is as follows: molybdenum (Mo), gold (Au), titanium (Ti), copper (Cu), palladium (Pd), platinum (Pt), tungsten (W), nickel (Ni) and chromium (Cr), or a bonding dielectric layer is a conductive polymer formed by one or two or more of a resin matrix and conductive particles of silver (Ag), gold (Au), copper (Cu), aluminum (Al), zinc (Zn), iron (Fe), nickel (Ni) and graphite (C), or a conductive slurry formed by particles of conductive particles of one or two or more of silver (Ag), gold (Au), copper (Cu), aluminum (Al), zinc (Zn), iron (Fe), nickel (Ni) and graphite (C), a binder, a solvent and an auxiliary agent, or a bonding dielectric layer is a silicate-based high-temperature conductive adhesive, or a bonding dielectric layer is nickel (Ni), High temperature alloy slurry formed by chromium (Cr), silicon (Si) and boron (B), or organic and inorganic adhesives such as epoxy gum, 502 quick-drying glue, silica gel and acetone glue.
The bonding medium layer can be prepared on the surfaces of the nitride epitaxial layer and the transfer substrate by magnetron sputtering, electroplating, vacuum thermal evaporation or wet process.
The thickness of the transfer substrate is 10-3000 microns, and the transfer substrate is any one elementary metal or alloy of two or more elementary metals, or Si crystal, SiC crystal, ceramic substrate, sapphire crystal, glass material or AlSi crystal, of molybdenum (Mo), copper (Cu), titanium (Ti), tungsten (W), palladium (Pd), platinum (Pt), nickel (Ni) and chromium (Cr).
The following examples are given for illustration of the respective embodiments.
Example one
And S11, growing a GaN epitaxial film with the thickness of 10um on the sapphire substrate with the thickness of 2 inches and 430um by using the MOCVD technology, and preparing the sapphire-based GaN composite substrate.
And S12, bonding the silicon wafer and the GaN surface of the GaN composite substrate by using the 502 quick-drying adhesive, as shown in the attached figure 3-1.
And S13, stripping and removing the sapphire substrate by using 248nm wavelength laser, and exposing the stripped surface of the laser to obtain the GaN composite substrate.
S14, selecting a cavity structure shown in the attached drawing 1, placing 300ml of hydrochloric acid with the concentration of 37% into a beaker, placing the GaN composite substrate subjected to laser stripping at a position 2cm higher than the liquid level by utilizing the height of a clamping groove, sealing the opening of the beaker by using tinfoil, standing for 40min, performing ultrasonic cleaning by using isopropanol, acetone and ultrapure water, and drying by nitrogen to finish atmosphere corrosion treatment on the laser stripping surface, as shown in the attached drawing 3-2.
Example two
S21, growing 25 nmAIN serving as a buffer layer on the sapphire substrate with the thickness of 2 inches and 430um by utilizing PVD, and preparing the GaN composite substrate with the thickness of 20um by utilizing MOCVD epitaxial technology and HVPE epitaxial technology.
And S22, bonding the quartz glass sheet and the GaN surface of the GaN composite substrate by adopting 502 quick-drying glue.
S23, removing the sapphire substrate by using 193nm wavelength laser stripping, and exposing the surface of the sapphire substrate after laser stripping to obtain the GaN composite substrate, as shown in the attached figure 4-1.
S24, selecting a cavity structure as shown in figure 2, placing the GaN composite substrate into a sealed cavity, closing a cavity door, introducing hydrochloric acid gas, standing for 30min, performing ultrasonic cleaning by using isopropanol, acetone and ultrapure water, and drying by nitrogen, thus completing atmosphere corrosion treatment on the laser stripping surface. As shown in fig. 5-2. In this embodiment, the chamber is not filled with the etching liquid, but the GaN composite substrate is etched by directly introducing the etching gas into the sealed chamber to form the atmosphere.
EXAMPLE III
And S31, growing a GaN epitaxial film with the thickness of 10um on the sapphire substrate with the thickness of 2 inches and 430um by using the MOCVD technology, and preparing the sapphire-based GaN composite substrate.
S32, depositing an Au film with a thickness of 1 μm on the GaN epitaxial layer and the tungsten copper (WCu) substrate, respectively, and then bonding the WCu substrate and the GaN epitaxial layer together by 120 minutes at 300 ℃ under a pressure of 10 tons.
And S33, removing the sapphire substrate by using a 248nm wavelength laser lift-off technology to expose the surface after laser lift-off. As shown in fig. 5-1.
S34, selecting the chamber structure as shown in fig. 2. And placing the laser-stripped GaN composite substrate in an upper clamp and a lower clamp, and fixing the clamps. Placing the laser peeling surface into a sealed cavity, closing a cavity door, introducing hydrochloric acid gas, standing for 20min, performing ultrasonic cleaning by using isopropanol, acetone and ultrapure water, and drying by blowing nitrogen gas to finish atmosphere corrosion treatment on the laser peeling surface. As shown in fig. 6-2. In this embodiment, the chamber is not filled with the etching liquid, but the GaN composite substrate is etched by directly introducing the etching gas into the sealed chamber to form the atmosphere.
Example four
And S41, growing the LED chip epitaxial wafer with the GaN buffer layer on the sapphire substrate with the thickness of 2 inches and 430um by using the MOCVD technology.
And S42, completing chip cutting, and bonding the LED chip epitaxial wafer to the MoCu substrate by using Au/Sn. As shown in fig. 6-1 and 6-2.
S43, removing the sapphire substrate by laser stripping with the wavelength of 248nm to expose the laser stripped surface, as shown in the attached figure 7-2.
S44, selecting a cavity structure shown in the attached drawing 1, placing 300ml of hydrochloric acid with the concentration of 37% into a beaker, placing the position, 2-3cm higher than the liquid level, of the composite substrate subjected to laser stripping by utilizing the height of a clamping groove, sealing the opening of the beaker by using tinfoil, standing for 40min, performing ultrasonic cleaning by using isopropanol, acetone and ultrapure water, and drying by nitrogen, thus finishing the atmosphere corrosion treatment on the laser stripping surface. As shown in fig. 6-3.
EXAMPLE five
And S51, growing a 1mm thick film GaN layer on the sapphire substrate with the thickness of 2 inches and 430um by combining the MOCVD epitaxial technology and the HVPE epitaxial technology, and preparing the GaN composite substrate.
And S52, removing the sapphire substrate by using a 248nm wavelength laser lift-off technology to expose the surface after laser lift-off.
S53, selecting a cavity structure shown in the attached drawing 1, placing 300ml of hydrochloric acid with the concentration of 37% into a beaker, placing a GaN composite substrate sample subjected to laser stripping at a position 2-3cm higher than the liquid level by utilizing the height of a clamping groove, sealing the opening of the beaker by using tinfoil, standing for 40min, performing ultrasonic cleaning by using isopropanol, acetone and ultrapure water, and drying by nitrogen, thus completing atmosphere corrosion treatment on the laser stripping surface, which is shown in the attached drawing 7.
In addition, the laser lift-off, MOCVD, HVPE techniques for growing epitaxial layers, electroplating, surface etching, and the like, which are mentioned above, are well known techniques known to those skilled in the art, and are not essential to the invention of the present application, and therefore, detailed descriptions thereof will not be provided herein.
It should be noted that the above description is not intended to limit the technical solutions of the present invention, and any obvious alternative is within the protection scope of the present invention without departing from the inventive concept of the present invention.
Claims (5)
1. A surface treatment method for nitride materials after laser stripping comprises the following steps:
preparing a nitride composite substrate or a nitride single crystal substrate in a laser lift-off mode;
selecting a cavity, filling volatile corrosive liquid into the cavity, putting a nitride composite substrate or a nitride single crystal substrate above the liquid level in the cavity, sealing the cavity to form a closed cavity, placing the closed cavity for a preset time T, and carrying out corrosion treatment on the surface of the nitride composite substrate or the nitride single crystal substrate subjected to laser stripping by utilizing the atmosphere generated by volatilization of the corrosive liquid;
opening the chamber, cleaning and drying the nitride composite substrate or the nitride single crystal substrate in the chamber, and completing atmosphere corrosion treatment on the laser stripping surface;
the corrosive liquid is volatile hydrochloric acid, acetic acid or ammonia water.
2. The method for surface treatment of nitride material after laser lift-off according to claim 1, wherein the nitride composite substrate or nitride single crystal substrate is placed in a 2-5 cm area above the liquid level in the chamber.
3. The method for surface treatment of nitride material after laser lift-off according to claim 2, characterized in that said predetermined time T of standing is 15-50 minutes.
4. The method for surface treatment of nitride material after laser lift-off according to claim 3, characterized in that the cleaning is carried out by ultrasonic cleaning using isopropyl alcohol, acetone and ultra-pure water.
5. The method for surface treatment of nitride material after laser lift-off according to claim 4, wherein the chamber comprises a housing and a fixture disposed in the housing for fixing the nitride composite substrate or the nitride single crystal.
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| CN1462060A (en) * | 2002-05-13 | 2003-12-17 | 住友电气工业株式会社 | GaN single crystal base, nitride type semiconductor optical growth base, nitride type semiconductor device and its producing method |
| JP2004335954A (en) * | 2003-05-12 | 2004-11-25 | Sumitomo Mitsubishi Silicon Corp | Method for collecting metal impurities from silicon substrate |
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| CN1383185A (en) * | 2002-05-31 | 2002-12-04 | 南京大学 | Process for preparing self-supporting gallium nitride substrate by laser stripping method |
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