CN107197544A - Inorganic non-metallic far infrared graphite resistive film, its preparation method and application - Google Patents
Inorganic non-metallic far infrared graphite resistive film, its preparation method and application Download PDFInfo
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- CN107197544A CN107197544A CN201710305712.8A CN201710305712A CN107197544A CN 107197544 A CN107197544 A CN 107197544A CN 201710305712 A CN201710305712 A CN 201710305712A CN 107197544 A CN107197544 A CN 107197544A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 182
- 239000010439 graphite Substances 0.000 title claims abstract description 152
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 152
- 238000002360 preparation method Methods 0.000 title claims description 15
- 239000000843 powder Substances 0.000 claims abstract description 97
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 72
- 239000000919 ceramic Substances 0.000 claims abstract description 65
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910000416 bismuth oxide Inorganic materials 0.000 claims abstract description 44
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000010445 mica Substances 0.000 claims abstract description 39
- 229910052618 mica group Inorganic materials 0.000 claims abstract description 39
- 239000011787 zinc oxide Substances 0.000 claims abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910000410 antimony oxide Inorganic materials 0.000 claims abstract description 32
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000006004 Quartz sand Substances 0.000 claims abstract description 27
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 claims abstract description 27
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 claims abstract description 27
- 229910052808 lithium carbonate Inorganic materials 0.000 claims abstract description 27
- 229910000018 strontium carbonate Inorganic materials 0.000 claims abstract description 27
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 26
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000004327 boric acid Substances 0.000 claims abstract description 16
- 239000002994 raw material Substances 0.000 claims abstract description 16
- 239000011159 matrix material Substances 0.000 claims abstract description 15
- 239000007788 liquid Substances 0.000 claims abstract description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 12
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 25
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- 238000005245 sintering Methods 0.000 claims description 12
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- 238000001035 drying Methods 0.000 claims description 8
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- 238000001816 cooling Methods 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910052755 nonmetal Inorganic materials 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 claims description 5
- 239000003814 drug Substances 0.000 claims description 4
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- 229920001249 ethyl cellulose Polymers 0.000 claims description 2
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- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- 239000010410 layer Substances 0.000 description 12
- 229910044991 metal oxide Inorganic materials 0.000 description 12
- 150000004706 metal oxides Chemical class 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
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- 238000000576 coating method Methods 0.000 description 5
- 229910000464 lead oxide Inorganic materials 0.000 description 5
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
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- 230000002708 enhancing effect Effects 0.000 description 4
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 4
- 230000001954 sterilising effect Effects 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000032683 aging Effects 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 230000001458 anti-acid effect Effects 0.000 description 3
- 230000003712 anti-aging effect Effects 0.000 description 3
- PNEFIWYZWIQKEK-UHFFFAOYSA-N carbonic acid;lithium Chemical compound [Li].OC(O)=O PNEFIWYZWIQKEK-UHFFFAOYSA-N 0.000 description 3
- 238000006555 catalytic reaction Methods 0.000 description 3
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- 238000005485 electric heating Methods 0.000 description 3
- 230000013011 mating Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000011056 performance test Methods 0.000 description 3
- 239000010970 precious metal Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000013112 stability test Methods 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000005267 amalgamation Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 2
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- 239000013538 functional additive Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
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- 239000004575 stone Substances 0.000 description 2
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- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- 208000034656 Contusions Diseases 0.000 description 1
- 206010020675 Hypermetropia Diseases 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 241000270708 Testudinidae Species 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000009519 contusion Effects 0.000 description 1
- 229940116318 copper carbonate Drugs 0.000 description 1
- GEZOTWYUIKXWOA-UHFFFAOYSA-L copper;carbonate Chemical compound [Cu+2].[O-]C([O-])=O GEZOTWYUIKXWOA-UHFFFAOYSA-L 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 230000008821 health effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000004060 metabolic process Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 102000039446 nucleic acids Human genes 0.000 description 1
- 108020004707 nucleic acids Proteins 0.000 description 1
- 150000007523 nucleic acids Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- CJJMLLCUQDSZIZ-UHFFFAOYSA-N oxobismuth Chemical group [Bi]=O CJJMLLCUQDSZIZ-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical group [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/017—Manufacturing methods or apparatus for heaters
Landscapes
- Paints Or Removers (AREA)
- Laminated Bodies (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The invention provides a kind of inorganic non-metallic far infrared graphite resistive film, it is made up of matrix material and liquid medium, described matrix material is made up of the following raw materials according of following parts by weight：150 300 parts of graphite powder, 90 180 parts of ultrafine mica powder, 60 120 parts of far-infared ceramic powder, 300 500 parts of bismuth oxide, 250 350 parts of zinc oxide, 100 150 parts of antimony oxide, 180 250 parts of boric acid, 50 100 parts of aluminum oxide, 70 120 parts of strontium carbonate, 30 70 parts of magnesia, 25 70 parts of quartz sand, 50 120 parts of lithium carbonate, wherein, nano-titanium oxide is contained in the far-infared ceramic powder.
Description
Technical field
The invention belongs to field of inorganic nonmetallic material, more particularly to a kind of inorganic non-metallic far infrared graphite resistive film,
Its preparation method and application.
Background technology
Far infrared resistive film Electric heating is a kind of novel electric heating proposed in the world in the phase at the beginning of the fifties in last century
Mode, it is with thermal efficiency height, fast and no naked light that conducts heat, rich in far infrared, planar radiant heating, heating-up temperature is uniform, produce
Product component is simple, power can easily be accommodated, energy-conserving and environment-protective the advantages of and by the most attention of people.Due to resistive film heating technique
Compared with other exothermic materials, with more more clear advantage, such as：Energy saving, long lifespan, using scope is wide, processing work
Skill is simple, simple in construction, cost is low, low temperature large area is heated, safe and reliable, so many countries are to resistive film heating technique
Using all paying much attention to, the research work of some developed countries in this regard was never interrupted, each major company of the world, colleges and universities, section
The competition ground between institutes is very fierce, and products application is also quite varied.Such as：American-European, Japan and Korea S. constantly develop graphite resistance film
New material, new technology, make the progressively seriation of resistive film product, and product quality is constantly improved, and the volume of production and marketing of product is also steady
Step rises.
But, the material of manufacture resistive film is substantially all using noble metals such as gold, silver, platinum, tungsten, ruthenium, palladiums in the world at present
The semi-conducting material of material and undoped indium tin oxide, technological requirement is high, and membrane equipment is complicated, and material cost is high, so product
It is particularly expensive.Therefore, noble metal resistance membrane technology is mainly used in a small number of high consumptions such as space flight, aviation, military affairs, medical treatment, oil exploitation
Take field.The inorganic graphite resistive film applied to civilian goods is mainly used as main component using lead oxide and tin oxide in the market.
Lead oxide is indispensable as the intermediate of inorganic graphite resistive film, and lacking can not film forming after lead oxide.Prepare inorganic graphite electricity
Lead oxide during resistance film, content reach more than 60%-70%, therefore, in preparation process can produce substantial amounts of waste water, waste gas, useless
The pollutants such as material, can damage to ecological environment, have a strong impact on health.More seriously, due to inorganic graphite electricity
The use field for hindering film is directly related with the life of the mankind, for example：As medicine equipment, health treatment, building heating it is important
Core component, high lead tolerance is very big to the mankind and environmental hazard, is highly detrimental to life health and the environmental protection of people.Together
When, the harmful substance such as leaded has this kind of product of harm to human body and environment, and nothing has been faced in the developed country such as America and Europe market
The skill error of lead, so capturing unleaded production inorganic non-metallic far infrared graphite resistive film product, has been arrived
Very urgent stage.Investigative technique personnel are attempting to reduce the content of lead always or are preventing to use lead, use other materials
To substitute, but it is prepared out graphite resistance film layer, its electric stability energy, mechanical strength, toughness of products, adhesive force,
The performances such as anti-aging, corrosion-resistant, antiacid alkali, corrosion-resistant, thermal coefficient of expansion are not ideal enough.Especially with new material conduct
Intermediary material, adhesive force, resistance dispersion and the heat endurance of graphite resistance film layer, can not reach good effect.
The content of the invention
It is an object of the invention to provide a kind of inorganic non-metallic far infrared graphite resistive film and preparation method thereof, it is intended to solves
The resistive film that certainly prior art is provided uses precious metal, causes expensive unsuitable civilian；Graphite resistance film is using leaded
Prepared by oxide, influence ecological environment and human health；And the trial of the existing resistive film without lead, adhesive force and thermally-stabilised
The problem of property is bad.
The present invention is achieved in that a kind of inorganic non-metallic far infrared graphite resistive film, is situated between by matrix material and liquid
Matter is made, and described matrix material is made up of the following raw materials according of following parts by weight：
Wherein, nano-titanium oxide is contained in the far-infared ceramic powder.
And, a kind of preparation method of inorganic non-metallic far infrared graphite resistive film comprises the following steps：
Formula according to above-mentioned inorganic non-metallic far infrared graphite resistive film weighs each component；
Bismuth oxide, zinc oxide, antimony oxide, boric acid, aluminum oxide, strontium carbonate, magnesia, quartz sand, lithium carbonate are added
It is ground, sieves after heat fusing, cooling, adds graphite powder, ultrafine mica powder, far-infared ceramic powder mixing, obtain base material and mix
Compound；
It is (1365-2355) according to base material mixture and organic media weight ratio in the base material mixture：(2320-
4946) ratio addition organic media, is mixed to get mixed slurry；
Substrate is provided, by mixed slurry printing on the substrate, is dried, sintering processes, obtains inorganic non-
Metal far infrared graphite resistive film.
Above-mentioned inorganic non-metallic far infrared graphite resistive film is in medicine equipment, health treatment, building heating, household electrical appliance neck
Application in domain.
The inorganic non-metallic far infrared graphite resistive film that the present invention is provided, first, with bismuth oxide, zinc oxide, three oxidations two
Antimony is used as main film forming substance so that the film layer of inorganic non-metallic far infrared graphite resistive film can be formed with preferable intensity
Continuous dry film；Further, other metal oxides are also added in inorganic non-metallic far infrared graphite resistive film, such as strontium carbonate,
Magnesia, quartz sand, lithium carbonate.On the one hand, such as strontium carbonate, magnesia, quartz sand, lithium carbonate are participated in into as film forming matter
Film；On the other hand, above-mentioned substance can be cooperateed with mutually as functional additive, be made up with bismuth oxide, zinc oxide, antimony oxide
It is used as the deficiency functionally of the resistive film of main film forming substance.Specifically, the bismuth oxide, zinc oxide, antimony oxide phase
Mutually coordinate, the operating temperature of graphite resistance film and the stability of electric property can be improved；Meanwhile, the strontium carbonate, magnesia,
Quartz sand, lithium carbonate mating reaction, further increase adhesive force, surface strength and the wearability of resistive film, it is to avoid inorganic non-
Metal far infrared graphite resistive film cracking phenomenon (cracking, peeling) in sintering process, and using or storing process
Scuffing.
Secondly, the inorganic non-metallic far infrared graphite resistive film that provides of the present invention, at the same with the addition of ultrafine mica powder, it is remote red
Outer ceramic powder functional powder, assigns resistive film excellent electric combination property and far infrared performance.Specifically, with it is described ultra-fine
The far-infared ceramic powder (containing nano-titanium oxide) that mica powder is used cooperatively, rich in far infrared, the enhancing of its far-infrared radiation rate
More than 15%；It can make inorganic non-metallic far infrared graphite resistive film that there is preferable catalysis oxidation function simultaneously, can effectively remove
Benzene, formaldehyde, sulfide, ammonia and the stink substance of interior are removed, and with sterilizing function.It is different from generally by ultrafine mica powder, far
Film forming is different come the technology that plays a role respectively for infrared ceramic powder, inorganic non-metallic far infrared graphite resistive film of the present invention, with
, can on the premise of bismuth oxide, zinc oxide, antimony oxide, strontium carbonate, magnesia, quartz sand, lithium carbonate etc. are as film forming matter
Realize and single-layer inorganic nonmetallic far infrared graphite resistive film is added and then prepared while ultrafine mica powder, far-infared ceramic powder.
Again, the inorganic non-metallic far infrared graphite resistive film that provides of the present invention, graphite resistance film main framework material is
Inorganic high-temp metal oxide materials make, and resistance, electric property are more stablized, it is easy to industrialize, large-scale production；It is inorganic non-
Metal far infrared graphite resistive film is using materials such as bismuth oxide, silica as framework material, and material softening point temperature is significantly improved,
Graphite resistance film prepared by it, application is more extensive.Antimony oxide, zinc oxide and lithium carbonate are used as original simultaneously
Material, the antimony oxide and zinc oxide are used to effectively improve the adhesive force between product and carrier, and then raising combines effect,
The amalgamation that the lithium carbonate can reconcile between antimony oxide, zinc oxide and other material compositions, so as to ensure the effect above
Realization.
The inorganic non-metallic far infrared graphite resistive film that the present invention is provided, high mechanical strength, with preferable enhancing toughness,
Adhesive force, anti-ageing property, corrosion resistance, anti acid alkali performance, corrosion resistance, its thermal coefficient of expansion are small, will not produce cracking, peeling etc.
Phenomenon.In addition, the inorganic non-metallic far infrared graphite resistive film constitutive material is free of precious metals species, not even containing metal object
Matter, therefore, price are human-oriented, are conducive to graphite resistance film popularizing in civil area；Meanwhile, it is inorganic non-that the present invention is provided
Metal far infrared graphite resistive film, does not contain leaded material, can avoid preparing discarded object pollution on the environment and lead pair
The adverse effect that health is brought, meets environmental protection theory.
The preparation method for the inorganic non-metallic far infrared graphite resistive film that the present invention is provided, only need to be by each oxide fusion
Graphite powder, ultrafine mica powder, far-infared ceramic powder are added after reason, then adds organic media slurry film forming is made, not only method letter
It is single, and obtained excellent product performance.In addition, present invention breakthrough is traditional by functional powder ultrafine mica powder, far infrared
The technique of ceramic powder difference film forming formation surface far-infrared radiation coating, the ultrafine mica powder, far-infared ceramic powder is same
When add, one-pass film-forming is ensureing that performance is stable, particularly on the premise of far-infrared radiation intensity, shorten the production duration,
Production cost is reduced, is more suitable for civilian resistive film field.
The application for the inorganic non-metallic far infrared graphite resistive film that the present invention is provided, because its cost is low, can be widely used for
Each civil area, extends it and promotes applicability.
Embodiment
In order that technical problems, technical solutions and advantageous effects to be solved by the present invention are more clearly understood, below in conjunction with
Embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only to explain
The present invention, is not intended to limit the present invention.
The embodiments of the invention provide a kind of inorganic non-metallic far infrared graphite resistive film, by matrix material and liquid medium
It is made, described matrix material is made up of the following raw materials according of following parts by weight：
Wherein, nano-titanium oxide is contained in the far-infared ceramic powder.
In the embodiment of the present invention, described matrix material includes two parts, the glass that a part is made up of metal oxide
Micro mist framework material, including bismuth oxide, zinc oxide, antimony oxide, boric acid, aluminum oxide, strontium carbonate, magnesia, quartz sand, carbon
Sour lithium；The functional material that another part is made up of graphite powder, ultrafine mica powder, far-infared ceramic powder.Wherein, the skeleton
The aggregate of material charging resistor film, to support membrane structure；The functional material assigns resistive film utility function.
Specifically, the graphite powder is as one of major function raw material, in inorganic non-metallic far infrared graphite resistive film
It is a kind of far infrared resistance material for playing electric action.Inorganic non-metallic far infrared graphite resistive film under electric field action, its
In graphitic composition between carbon molecules between occur violent friction and shock, produce main with far infrared radiation and to manifold
The heat energy that formula is externally transmitted.In the embodiment of the present invention, the parts by weight of the graphite powder are 150-300 parts, can be specially 150
Part, 180 parts, 200 parts, 220 parts, 250 parts, 280 parts, 300 parts, preferably 180-280 parts.Further, inventor is through excessive
Quantity research is found, in the inorganic non-metallic far infrared graphite resistive film of specific composition of the embodiment of the present invention, the particle of the graphite
Degree must be very strictly controlled.When the graphite powder particle is spent greatly, during more than 400 mesh, inorganic non-metallic far infrared graphite can be caused
Resistive film heating is uneven and produces the excessive phenomenon of resistance dispersion.In view of this, granularity≤400 of the graphite powder
Mesh.It is preferred that, the particle diameter of the graphite powder is 400-500 mesh.
The ultrafine mica powder is the increasing of inorganic non-metallic far infrared graphite resistive film mid and far infrared line of the embodiment of the present invention
Strong agent, meanwhile, it is also the stabilizer mutually overlapped in inorganic non-metallic far infrared graphite resistive film.The ultrafine mica powder adds
Plus, the radiation of inorganic non-metallic far infrared graphite resistive film mid and far infrared line can not only be strengthened, moreover, the ultrafine mica powder
The mutual fusion between each component can be promoted, particularly strengthen bismuth oxide, zinc oxide, antimony oxide and strontium carbonate, oxidation
Mutual overlap joint between magnesium, quartz sand, lithium carbonate, so as to improve the machine of film forming and inorganic non-metallic far infrared graphite resistive film
Tool intensity, it is to avoid inorganic non-metallic far infrared graphite resistive film can locally produce the phenomenons such as cracking, peeling in use.Institute
Ultrafine mica powder parts by weight are stated for 90-180 parts, concretely 90 parts, 100 parts, 120 parts, 150 parts, 180 parts.It is preferred that, institute
Ultrafine mica powder parts by weight are stated for 100-170 parts.Further, particle diameter of the embodiment of the present invention to the ultrafine mica powder
There is strict control, specifically, the particle diameter of the ultrafine mica powder (i.e. granularity is less than 500 mesh) below 500 mesh.If described super
The granularity of thin mica powder is more than between 500 mesh, each component, particularly strengthens bismuth oxide, zinc oxide, antimony oxide and carbonic acid
Phase lap intensity between strontium, magnesia, quartz sand, lithium carbonate is deteriorated, and film-formation result is poor, inorganic non-metallic far infrared graphite electricity
Resistance film can locally produce the phenomenons such as cracking, peeling in use.It is preferred that, the particle diameter of the ultrafine mica powder is 500-
600 mesh.
The far-infared ceramic powder is that inorganic non-metallic far infrared graphite resistive film of the embodiment of the present invention is indispensable red
External radiation material.Specifically, the far-infared ceramic powder is the far-infared ceramic powder containing nano-titanium oxide.It is used as graphite resistance
The functional material of film, the far-infared ceramic powder can not only cooperate with the ultrafine mica powder enriches far infrared intensity work
With, and with preferable catalysis oxidation function, rich in far infrared, its far-infrared radiation rate enhancing more than 15% can have
Effect removes indoor benzene, formaldehyde, sulfide, ammonia and stink substance, and with sterilizing function.It is preferred that, made pottery with the far infrared
The gross weight of porcelain powder is 100% meter, and the weight percentage of the nano-titanium oxide is 8-12%, if the nano-titanium oxide
Weight percentage is too high, can cause resistive film poor adhesive force, the easily defect such as layering, influence resistive film film-formation result and resistive film
Service life；If the weight percentage of the nano-titanium oxide is too low, its be can not effectively remove interior benzene, formaldehyde,
The materials such as sulfide, ammonia and stink, and without sterilizing function, i.e. health effect can not spy show come.The far-infrared ceramic
The parts by weight of powder are 60-120 parts, concretely 60 parts, 80 parts, 100 parts, 120 parts.It is preferred that, the far-infared ceramic powder
Parts by weight be 70-110 parts.Particle of the nonmetallic far infrared graphite resistive film of machine of the embodiment of the present invention to far-infared ceramic powder
Degree is by being strict with, specifically, the particle diameter of the far-infared ceramic powder should be less than 500 mesh.If of the far-infared ceramic powder
Granularity is more than 500 mesh, and its far-infrared radiation intensity can weaken.It is preferred that, the particle diameter of the far-infared ceramic powder is 500-600
Mesh.
In the embodiment of the present invention, it is different from generally by ultrafine mica powder, far-infared ceramic powder that film forming plays a role respectively
Technology it is different, inorganic non-metallic far infrared graphite resistive film of the present invention, with bismuth oxide, zinc oxide, antimony oxide, carbonic acid
On the premise of strontium, magnesia, quartz sand, lithium carbonate etc. are as film forming matter, while by ultrafine mica powder, far-infared ceramic powder
Addition, slurry is formed under liquid medium effect, and then prepares the nonmetallic far infrared graphite resistive film of single-layer inorganic, is conducive to carrying
Farsighted infrared intensity, and then assign resistive film excellent electric combination property.
As the presently preferred embodiments, the particle diameter of the graphite powder is 400-500 mesh；The particle diameter of the ultrafine mica powder is 500-
600 mesh；The particle diameter of the far-infared ceramic powder is 500-600 mesh.By the particle diameter of above-mentioned substance, improve inorganic non-metallic far red
The resistance dispersion of outer graphite resistance film, improves its sheet resistance repeatability.
Containing the graphite, ultrafine mica powder, far-infared ceramic powder inorganic non-metallic far infrared graphite resistive film, in electricity
Under field action, produced far infrared dominant wavelength ranges are 8-14 μm, medical field also appellation its " healthy light " and " life
Light ".It can activate the activity of large biological molecule, the molecule of organism is excited and is in compared with high vibration state,
So make to have activated the activity of the biological big hydrone such as nucleic acid protein, thus played large biological molecule regulation organism metabolism,
It is immune to wait movable function, be conducive to recovery and the balance of function, reach the purpose prevented and cured diseases, promote and improve blood and follow
Ring, etc..Based on this, far-infrared ray power has transferability from high to low, i.e. energy can be transmitted to from a powerful side and decline
A weak side, the energy balance to regulation each organ of human body is particularly significant, so inorganic non-metallic far infrared graphite resistive film is
It can be widely used in fields such as medical treatment, health care, physical efficiency recovery, rehabilitation, building heating, household electrical appliance.
In the embodiment of the present invention, the bismuth oxide is the material of main part in inorganic non-metallic far infrared graphite resistive film, hair
Wave middle skeleton function.Specifically, the parts by weight of the bismuth oxide are 300-500 parts, middle skeleton could be effectively played
Effect, is specifically as follows 300 parts, 330 parts, 350 parts, 380 parts, 400 parts, 430 parts, 450 parts, 470 parts, 500 parts.It is preferred that,
The parts by weight of the bismuth oxide are 330-470 parts.Bismuth oxide environmental protection described in the embodiment of the present invention, to health not damaged,
Also the sound development beneficial to preserving the ecological environment.But relative to lead oxide, the bismuth oxide has higher softening temperature and ring
Characteristic is protected, therefore, a large amount of of bismuth oxide use the film-forming temperature for significantly improving inorganic non-metallic far infrared graphite resistive film
And temperature in use.
The inorganic non-metallic far infrared graphite resistive film needs to be attached on carrier, is further prepared into various electronics members
Part.Adhesive ability of the slurry largely obtained using the bismuth oxide on carrier is poor.Inorganic non-metallic of the embodiment of the present invention
In far infrared graphite resistive film, zinc oxide is with the addition of as material component.The zinc oxide can be effectively improved inorganic non-metallic
The coefficient of expansion of far infrared graphite resistive film, prevents cracking；Meanwhile, the zinc oxide promotes each group to divide it also as fluxing agent
Between rapid fusion so that the fused mass of forming properties stable homogeneous.By the fluxing action of the zinc oxide, make inorganic non-gold
Belong to thermal coefficient of expansion and carrier (including mica substrate, reinforced glass substrate, the high-boron-silicon glass base of far infrared graphite resistive film
Plate, quartz glass substrate, crystallite glass substrate, ceramic substrate, porcelain enamel substrate) unanimously, effectively adjust inorganic non-metallic far infrared
Adhesion and adhesive force between graphite resistance film and carrier, make knot of the inorganic non-metallic far infrared graphite resistive film on carrier
With joint efforts more preferably.The parts by weight of the zinc oxide be 250-350 parts, concretely 250 parts, 280 parts, 300 parts, 320 parts, 340
Part, 350 parts.It is preferred that, the parts by weight of the zinc oxide are 260-340 parts.
In the embodiment of the present invention, on the one hand, the bismuth oxide, the cooperation of the antimony oxide and the zinc oxide make
With the operating temperature of inorganic non-metallic far infrared graphite resistive film can be improved, it is possible to decrease linear expansion coefficient, heat shock resistance is strong, heat
Stability is improved, so as to expand the scope of application and properties of product of inorganic non-metallic far infrared graphite resistive film.On the other hand,
The antimony oxide coordinates the lithium carbonate, boric acid and strontium carbonate, and collective effect improves far-infared ceramic powder, glass granules
The adhesive force of (including bismuth oxide and other metal oxides) and carrier, promotes viscous between far-infared ceramic powder, glass granules
Tie power；Meanwhile, the antimony oxide can also strengthen the associativity between far-infared ceramic powder, glass granules and the graphite powder
Can, so that obtained inorganic non-metallic far infrared graphite resistive film electric property is more stablized.The antimony oxide
Parts by weight are 100-150 parts, concretely 100 parts, 110 parts, 120 parts, 130 parts, 140 parts, preferably 150 parts, 110-130
Part.
In the embodiment of the present invention, the boric acid as bismuth oxide complementary element, collectively as inorganic non-metallic far infrared
The intermediate host material of graphite resistance film.The addition of the boric acid, can promote the Flashmelt of material in manufacturing process, melt
Close, it is ensured that inorganic non-metallic far infrared graphite resistive film is being used and will not cracked and cracking phenomena in manufacturing process, from
And improve product quality and stability.In addition, the boric acid also improves far infrared together with the antimony oxide, strontium carbonate
The adhesive force of ceramic powder, glass granules (including bismuth oxide and other metal oxides) and carrier；Strengthen far-infrared ceramic simultaneously
Binding ability between powder, glass granules and the graphite powder.The parts by weight of the boric acid are 180-250 parts, concretely
180 parts, 200 parts, 220 parts, 250 parts, preferably 190-230 parts.
The strontium carbonate as supplement raw material, except improve together with the antimony oxide, boric acid far-infared ceramic powder,
Outside the adhesive force of glass granules (including bismuth oxide and other metal oxides) and carrier, while strengthening far-infared ceramic powder, glass
Outside binding ability between glass particulate and the graphite powder.In addition, the strontium carbonate can also coordinate with the magnesia, promote stone
The Surface hardened layer of black resistive film, prevention inorganic non-metallic far infrared graphite resistive film is scratched and dampened during operation, storage.
The parts by weight of the strontium carbonate are 70-120 parts, concretely 70 parts, 80 parts, 90 parts, 100 parts, 110 parts, 120 parts.It is preferred that
, the parts by weight of the strontium carbonate are 85-110 parts.
By using the antimony oxide, boric acid and strontium carbonate of above-mentioned parts by weight, on the one hand, improve ceramics, glass micro-
Surface adhesion between powder and between ceramics, glass granules and carbon dust, is improved in inorganic non-metallic far infrared graphite resistive film
The adhesion in portion and the adhesive force with carrier；On the other hand, the temperature of inorganic non-metallic far infrared graphite resistive film can be improved
The scope of application and material softening temperature spot.In addition, each component is mutually coordinated, moreover it is possible to be effectively improved inorganic non-metallic far infrared graphite
The thermal coefficient of expansion of resistive film, improves its heat endurance.
In the embodiment of the present invention, the aluminum oxide as another skeletal support raw material, for build the graphite powder and
The bridge of mutual overlap joint between the micro- material of far-infared ceramic powder, glass (including other each metal oxides), so that each group
Dividing can fully combine, merge, and improve the compactness and stability of resistive film, while so that graphite powder and far-infared ceramic powder are assigned
The electric property given can give full play to.The parts by weight of the aluminum oxide be 50-100 parts, concretely 50 parts, 60 parts, 70
Part, 80 parts, 90 parts, 100 parts.It is preferred that, the parts by weight of the aluminum oxide are 55-80 parts.
In the embodiment of the present invention, the magnesia can coordinate as miscellaneous function raw material with the strontium carbonate, common to make
With graphite resistance film Surface hardened layer is promoted, prevention inorganic non-metallic far infrared graphite resistive film is scratched during operation, storage
And contusion.In addition, the magnesia also with the borate complex, promote various metal oxides fully to melt, make various metals
Oxide fusion is uniform.The parts by weight of the magnesia be 30-70 parts, concretely 30 parts, 40 parts, 50 parts, 60 parts, 70
Part.It is preferred that, the parts by weight of the magnesia are 35-60 parts.
The quartz sand is the supplementary material of bismuth oxide, and bismuth oxide forms the skeletal support of resistive film, phase lap together
Binding structure.By the supplement of quartz sand, the content of bismuth oxide can be reduced, so that appropriateness reduction inorganic non-metallic far infrared graphite
The film-forming temperature and temperature in use of resistive film.Because the property of quartz sand is limited, it is impossible to be excessively added to replace containing for bismuth oxide
Amount.Specifically, the parts by weight of the quartz sand be 25-70 parts, concretely 25 parts, 30 parts, 40 parts, 50 parts, 60 parts, 70
Part.It is preferred that, the parts by weight of the quartz sand are 30-60 parts.
Because the content of the bismuth oxide is higher so that between each component of inorganic non-metallic far infrared graphite resistive film
Caking property is substantially reduced.The lithium carbonate a small amount of by adding of the embodiment of the present invention, makes between the bismuth oxide and other components
Adhesion is greatly increased.By the mutual cooperation between the strontium carbonate and the bismuth oxide, inorganic non-metallic is improved far red
The adhesion of outer graphite resistance film, it is therefore prevented that inorganic non-metallic far infrared graphite resistive film goes out in the sintering process of preparation technology
The problems such as existing crackle, explosion, cracking, peeling.Meanwhile, by the adjustment effect of lithium carbonate, make bismuth oxide, antimony oxide oxidation
Adhesion between three kinds of framework materials of zinc is dramatically increased, and then forms the enhanced stable skeleton structure of mechanical strength.The carbon
The parts by weight of sour lithium are 50-120 parts, concretely 50 parts, 60 parts, 70 parts, 80 parts, 90 parts, 100 parts, 110 parts, 120 parts.
It is preferred that, the parts by weight of the lithium carbonate are 55-100 parts.
The embodiment of the present invention is used as main film forming substance using bismuth oxide, zinc oxide, antimony oxide so that inorganic non-metallic
The film layer of far infrared graphite resistive film can form the continuous dry film with preferable intensity；Further, inorganic non-metallic is far red
Other metal oxides, such as strontium carbonate, magnesia, quartz sand and lithium carbonate are also added in outer graphite resistance film.On the one hand, such as carbon
Sour strontium, magnesia, quartz sand, lithium carbonate participate in film forming as film forming matter；On the other hand, above-mentioned substance is added as function
Agent, can mutually be cooperateed with, make up using bismuth oxide, zinc oxide, antimony oxide as main film forming substance resistive film functionally
Deficiency.Specifically, the bismuth oxide, zinc oxide, antimony oxide cooperate, the work temperature of graphite resistance film can be improved
The stability of degree and electric property；Meanwhile, the strontium carbonate, magnesia, quartz sand, lithium carbonate mating reaction are further improved
The adhesive force of resistive film, surface strength and wearability, it is to avoid inorganic non-metallic far infrared graphite resistive film is in sintering process
Cracking phenomenon (cracking, peeling), and in the scuffing for using or storing process.It should be appreciated that in the embodiment of the present invention, respectively
Framework material and non-individual play respective effect and play the effect above, but by mutual between each framework material and multidirectional match somebody with somebody
Close, collective effect, assist to improve the combination property of inorganic non-metallic far infrared graphite resistive film.
As a preferred embodiment situation, the parts by weight of the graphite powder are 180-280 parts；The ultrafine mica powder
Parts by weight be 90-180 parts；The parts by weight of the far-infared ceramic powder are 70-110 parts；The parts by weight of the bismuth oxide
Number is 330-470 parts；The weight fraction of the zinc oxide is 260-340 parts；The parts by weight of the antimony oxide are 110-
130 parts；The parts by weight of the boric acid are 200-240 parts；The parts by weight of the aluminum oxide are 55-80 parts；The strontium carbonate
Parts by weight be 85-110 parts；The parts by weight of the magnesia are 35-60 parts；The parts by weight of the quartz sand are 30-
60 parts；The parts by weight of the lithium carbonate are 55-100 parts.
In the embodiment of the present invention, the raw material of the inorganic non-metallic far infrared graphite resistive film also includes liquid medium, institute
Stating liquid medium makes above-mentioned matrix material formation slurry, and then deposits film forming.It is preferred that, the liquid medium is organic media,
And the weight ratio of described matrix raw material and the organic media is (1365-2355):(2320-4946).If organic Jie
The usage amount of matter is too high or too low, and silk-screen printing will be unable to film forming, and the thickness of the resistive film of printing will be unable to control.Further
It is preferred that, the organic media is the relatively low organic media of boiling point, specifically, the boiling point of the organic media is at 180-250 DEG C,
To ensure in follow-up drying process process, the organic media can be vaporized completely.
Specific preferred, the organic media includes the following component of following parts by weight：
1972-4204 parts of terpinol；
209-445 parts of ethyl cellulose；
139-298 parts of silane coupler.
Inorganic non-metallic far infrared graphite resistive film provided in an embodiment of the present invention, first, with bismuth oxide, zinc oxide, three
Two antimony are aoxidized as main film forming substance so that the film layer of inorganic non-metallic far infrared graphite resistive film can be formed with preferable
The continuous dry film of intensity；Further, other metal oxides, such as carbon are also added in inorganic non-metallic far infrared graphite resistive film
Sour strontium, magnesia, quartz sand, lithium carbonate.On the one hand, such as strontium carbonate, magnesia, quartz sand, lithium carbonate are joined as film forming matter
With film forming；On the other hand, above-mentioned substance can be cooperateed with mutually as functional additive, be made up with bismuth oxide, zinc oxide, three oxidations
Two antimony as the resistive film of main film forming substance deficiency functionally.Specifically, the bismuth oxide, zinc oxide, three oxidations two
Antimony cooperates, and can improve the operating temperature of graphite resistance film and the stability of electric property；Meanwhile, the strontium carbonate, oxygen
Change magnesium, quartz sand, lithium carbonate mating reaction, further increase adhesive force, surface strength and the wearability of resistive film, it is to avoid nothing
The nonmetallic far infrared graphite resistive film of machine cracking phenomenon (cracking, peeling) in sintering process, and using or storing
The scuffing of process.
Secondly, inorganic non-metallic far infrared graphite resistive film provided in an embodiment of the present invention, while with the addition of ultra-fine mica
Powder, far-infared ceramic powder functional powder, assign resistive film excellent electric combination property and far infrared performance.Specifically, with
The far-infared ceramic powder (containing nano-titanium oxide) that the ultrafine mica powder is used cooperatively, rich in far infrared, its far infrared spoke
Penetrate rate enhancing more than 15%；It can make inorganic non-metallic far infrared graphite resistive film that there is preferable catalysis oxidation function simultaneously,
Benzene, formaldehyde, sulfide, ammonia and the stink substance of interior can be effectively removed, and with sterilizing function.It is different from ultra-fine cloud generally
Film forming is different come the technology played a role respectively for female powder, far-infared ceramic powder, inorganic non-metallic far infrared graphite resistance of the present invention
Film, using bismuth oxide, zinc oxide, antimony oxide, strontium carbonate, magnesia, quartz sand, lithium carbonate, basic copper carbonate etc. as
On the premise of film forming matter, added while ultrafine mica powder, far-infared ceramic powder can be achieved and then prepare the non-gold of single-layer inorganic
Belong to far infrared graphite resistive film.
Again, inorganic non-metallic far infrared graphite resistive film provided in an embodiment of the present invention, graphite resistance film main skeleton
Material is that inorganic high-temp metal oxide materials make, and resistance, electric property are more stablized, it is easy to industrialize, large-scale production；
Inorganic non-metallic far infrared graphite resistive film is using materials such as bismuth oxide, silica as framework material, and material softening point temperature is bright
Aobvious to improve, the graphite resistance film prepared by it, application is more extensive.Simultaneously using antimony oxide, zinc oxide and carbonic acid
Lithium is as raw material, and the antimony oxide and zinc oxide are used to effectively improve the adhesive force between product and carrier, and then improve
With reference to effect, the amalgamation that the lithium carbonate can reconcile between antimony oxide, zinc oxide and other material compositions, so as to ensure
The realization of the effect above.
Inorganic non-metallic far infrared graphite resistive film provided in an embodiment of the present invention, high mechanical strength, with preferable increasing
Obdurability, adhesive force, anti-ageing property, corrosion resistance, anti acid alkali performance, corrosion resistance, its thermal coefficient of expansion are small, will not produce tortoise
Split, the phenomenon such as peeling.In addition, the inorganic non-metallic far infrared graphite resistive film constitutive material is free of precious metals species, even
Without metallics, therefore, price is human-oriented, is conducive to graphite resistance film popularizing in civil area；Meanwhile, the present invention is real
The inorganic non-metallic far infrared graphite resistive film of example offer is provided, leaded material is not contained, material environment friendly, production and using process without
The three wastes are produced, and can be avoided preparing the adverse effect that discarded object pollution on the environment and lead bring health, be met
Environmental protection theory.
Inorganic non-metallic far infrared graphite resistive film provided in an embodiment of the present invention, can be prepared by following methods and obtained
.
Corresponding, the embodiments of the invention provide a kind of preparation method of inorganic non-metallic far infrared graphite resistive film, bag
Include following steps：
S01. each component is weighed according to the formula of above-mentioned inorganic non-metallic far infrared graphite resistive film；
S02. by bismuth oxide, zinc oxide, antimony oxide, boric acid, aluminum oxide, strontium carbonate, magnesia, quartz sand, carbonic acid
Lithium heating melting, is ground after cooling, sieves, and adds graphite powder, ultrafine mica powder, far-infared ceramic powder mixing, obtains base
Material mixture；
S03. it is (1365-2355) according to base material mixture and organic media weight ratio in the base material mixture：
The ratio addition organic media of (2320-4946), is mixed to get mixed slurry；
S04., substrate is provided, by mixed slurry printing on the substrate, is dried, sintering processes, obtains nothing
The nonmetallic far infrared graphite resistive film of machine.
Specifically, in above-mentioned steps S01, the formula and its preferred feelings of the inorganic non-metallic far infrared graphite resistive film
Condition, as described above, in order to save length, here is omitted.
In above-mentioned steps S02, by bismuth oxide, zinc oxide, antimony oxide, boric acid, aluminum oxide, strontium carbonate, magnesia, stone
Sand, lithium carbonate heating melting, form the first eutectic.It is preferred that, the temperature of the heating melting is 800-1250 DEG C, so that
Ensure that each raw material components are fully quickly merged.If the heating melting temperature is too low, can not substantially effectively it melt
Melt each metal oxide；If the temperature is too high, the softening point of base material mixture will be improved, and the film forming of resistive film can be influenceed to imitate
Fruit and film forming sintering temperature.
The first eutectic after cooling is ground, sieving is handled, the relatively uniform particulate of particle diameter is formed, so that favorably
In the electric property for obtaining stabilization.Then graphite powder, ultrafine mica powder, far-infared ceramic powder mixing are added, base material mixing is obtained
Thing.In order to be sufficiently mixed uniformly with the graphite powder, ultrafine mica powder, far-infared ceramic powder, and obtain the mixing of uniform particle diameter
System, and then formation even compact, the film layer of performance temperature after follow-up film forming, it is preferred that the sieving processing will be cooled down, ground
Fused mass after mill crosses the screen cloth of the mesh of mesh number >=500.By controlling the particle diameter of fused mass, improve inorganic non-metallic far infrared graphite
The resistance dispersion of resistive film, improves its sheet resistance repeatability.
In above-mentioned steps S03, mixed slurry of the organic media formation suitable for film forming is added in the base material mixture, its
In, the base material mixture is (1365-2355) with organic media weight ratio：The ratio addition organic media of (2320-4946),
It is mixed to get mixed slurry.
There is provided substrate in above-mentioned steps S04, the substrate includes mica substrate, reinforced glass substrate, high-boron-silicon glass base
Plate, quartz glass substrate, crystallite glass substrate, aluminium oxide ceramic substrate, porcelain enamel substrate, certainly, not limited to this.By the mixing
Slurry prints on the substrate, is dried successively, sintering processes, obtains inorganic non-metallic far infrared graphite resistive film.Its
In, the printing is preferred to use silk-screen printing, wherein, the mesh of silk screen is 40-300 mesh, more elects 100-300 mesh as.
It is preferred that, the drying mode is drying, and drying temperature is 120-280 DEG C, and drying time is preferably 10-20min,
Fully to remove the organic media in film layer, dense film is formed.The drying temperature is unsuitable too high or too low, if temperature mistake
Height, then can cause obtained film layer because internal-external temperature difference is big, be heated uneven and produce cracking, layering, foaming, explosion；If described
Temperature is too low, then is difficult to effectively remove organic media, and then during follow-up sintering, volatilization forms stomata influence film layer matter
Amount.It is preferred that, the temperature of the sintering is 480-680 DEG C, so as to form the stable uniform film layer of electric property.
The preparation method of inorganic non-metallic far infrared graphite resistive film provided in an embodiment of the present invention, only need to be by each oxide
Graphite powder, ultrafine mica powder, far-infared ceramic powder are added after melt process, then adds organic media slurry film forming is made, not only
Method is simple, and obtained excellent product performance.In addition, breakthrough of the embodiment of the present invention is traditional by the ultra-fine cloud of functional powder
The technique of female powder, far-infared ceramic powder difference film forming formation surface far-infrared radiation coating, by the ultrafine mica powder, remote red
Outer ceramic powder is added simultaneously, one-pass film-forming, on the premise of ensureing performance stabilization, particularly improving far-infrared radiation intensity,
The production duration is shortened, production cost is reduced, is more suitable for civilian resistive film field.
Inorganic non-metallic far infrared graphite resistive film of the embodiment of the present invention is the core of various electric heating products and heating system
Element, the characteristic with planar infrared radiation heating is widely used in various medicine equipments, health treatment, building heating, family expenses
The industries such as electrical equipment need Far-infrared Heating and require that the place that thermal stability is good, environmental requirement is high is used.
In view of this, the embodiment of the present invention additionally provides a kind of above-mentioned inorganic non-metallic far infrared graphite resistive film in medical treatment
Application in apparatus, health treatment, building heating, household appliance technical field.
The application of inorganic non-metallic far infrared graphite resistive film provided in an embodiment of the present invention, can be wide because its cost is low
It is general to be used for each civil area, extend it and promote applicability.
Below, illustrate with reference to being embodied.
Embodiment 1
A kind of inorganic non-metallic far infrared graphite resistive film (about 2000 grams), is made up, institute of matrix material and liquid medium
Matrix material is stated to be made up of the following raw materials according of following weight：
The liquid organic medium that the organic media is made up of the following component of following weight percentage：
Weight terpinol 85%；
Weight diethylene cellulose 9%；
Weight silane coupler 6%,
Gross weight is 3400g-4200g.
The preparation method of the inorganic non-metallic far infrared graphite resistive film, comprises the following steps：
S11. each component is weighed according to the formula of above-mentioned inorganic non-metallic far infrared graphite resistive film；
S12. by bismuth oxide, zinc oxide, antimony oxide, boric acid, aluminum oxide, strontium carbonate, magnesia, quartz sand, carbonic acid
Lithium stirs in mixer, by this mixture in being melted 60 minutes at 1280 DEG C, after the mixed material block obtained cooling
Crushed, then with sand mill grind 2 hours, make particle diameter be less than 500 mesh micro mist, then be charged with graphite powder, it is ultra-fine
Mica powder, far-infared ceramic powder, obtain base material mixture；
S13. in the base material mixture, organic media is added, uniform mixed slurry is modulated into；
S14. a block length 1000mm, width 500mm, thickness 4mm rectangle microcrystal glass plate are taken, is then existed with conductive silver slurry
Each printing one long 470mm, wide 10mm conduction are distinguished on the same side of two short sides of the rectangle crystallite glass substrate
Electrode, it is lead ends then to print 12*12 squares in the middle part of two conductive electrodes respectively again, by this bottom plate together with conductive electrode
Dry for standby；Inorganic non-metallic far infrared graphite resistive film, the inorganic non-metallic far infrared are printed using silk-screen printing technique
2/3 part of the width of graphite resistance film covering conductive electrode pole body 3, lead ends should cover the 1/4 of conductive electrode pole body, to prevent
Loose contact.It is dried 20 minutes at 120 DEG C, then sintered 20 minutes at 630 DEG C, that is, inorganic non-gold of the invention has been made
Belong to far infrared graphite resistive film.
It is consequently formed the tabular crystallite glass substrate far-infrared radiation that one piece of area is 93.2 × 47=4380.4C ㎡
Resistive element.
Two interelectrode resistance are measured with ohmmeter for 96 Ω, its square resistance should be 48 Ω/.
Embodiment 2
In example 2, described matrix material is made up of the following raw materials according of following weight：
The liquid organic medium that the organic media is made up of the following component of following weight percentage：
Weight terpinol 88%；
Weight diethylene cellulose 8%；
Weight silane coupler 4%.
Other are all tested by the condition of embodiment 1, obtain the substantially the same result of embodiment 1.
Embodiment 3
In embodiment 3, described matrix material is made up of the following raw materials according of following weight：
The liquid organic medium that the organic media is made up of the following component of following weight percentage：
Weight terpinol 83%；
Weight diethylene cellulose 10%；
Weight silane coupler 7%.
Other are all tested by the condition of embodiment 2, obtain the result substantially the same with embodiment 1-2.
The resistive element that above-described embodiment 1-3 is obtained carries out performance test, and method of testing and result are as follows：
Stability test 1 (storage stability)：
3 kinds of inorganic non-metallic far infrared graphite resistive film resistive elements that above-described embodiment 1-3 is obtained, high-boron-silicon glass
Each 10 pieces of heating board, ceramic heating plate, crystallite heating board is placed on (relative humidity 80%-90%) storage one in the experimental box of humidity
Year, as a result do not find any one resistive element moisture absorption or go mouldy.Resistance value testing result shows, the rate of change of its resistance value
≤ 1%.As can be seen here, inorganic non-metallic far infrared graphite resistive film resistive element provided in an embodiment of the present invention, with intentional
Storage stability.
Stability test 2 (heat endurance)：
Apply between the two ends lead ends of 3 kinds of above-mentioned inorganic non-metallic far infrared graphite resistive film resistive elements
1.15 times of (virtual voltages of 220V alternating voltage：253V), its current strength reach 3 amperes, its general power reach 660W, its
Thermal equilibrium temperature reaches 120 DEG C or slightly higher.It is continuous under extra-heavy working condition herein to work 5000 hours.Then stop logical
Electricity, resistance measurement is carried out when it is cooled to after room temperature.As a result show, rate of change≤1% of its resistance value.As can be seen here, this hair
The inorganic non-metallic far infrared graphite resistive film resistive element that bright embodiment is provided, with intentional heat endurance.
Temperature homogeneity experiment 3 (determines inorganic non-metallic far infrared graphite resistive film element in operation, high-boron-silicon glass hair
Hot plate, ceramic heating plate, crystallite heating board surface temperature are uniformly distributed, i.e. the uniformity of square resistance)：
This test good iron case of one peripheral sealing.By 3 kinds of above-mentioned resistive elements, high-boron-silicon glass heating board,
Ceramic heating plate, crystallite 3 test periods of heating board point, each resistive element is tested respectively.First, resistive element is kept flat
On the bottom insulation support of iron case, 6 temperature sensing probes are placed on the different position of resistance element face coating.Resistance
Element is run 300 minutes with 220 DEG C, the temperature value of average 30 minutes record temperature sensing probes.Its temperature high-low temperature difference should be 5
Within DEG C.In addition, the surface temperature of conductive electrode and lead ends should not be greater than the temperature of resistance element face coating.As a result table
Bright, the temperature of resistance element face coating is uniform, and high-low temperature difference can be obtained within 5 DEG C by above-mentioned experiment：Resistive element table
The square resistance of finishing coat is uniform.
Far infrared performance test 4：
By above-mentioned 3 kinds of inorganic non-metallics far infrared graphite resistive film resistive element, high-boron-silicon glass heating board, ceramic heating
Each 10 of plate, crystallite heating board is delivered to：Country is infrared and industrial electroheat product quality supervision and inspection center is according to GB/T4654-
2008《Nonmetal basal body infrared radiation heater generic specifications》And GB/T7287-2008《Infrared radiation heater is tested
Method》Detect, the indices such as its relative radiation power spectrum, electric-thermal emission conversion efficiency, normal direction total emissivity meet or exceeded
Above-mentioned standard requirement.
Environmental-protecting performance experiment 5：
By above-mentioned 3 kinds of inorganic non-metallics far infrared graphite resistive film resistive element, high-boron-silicon glass heating board, ceramic heating
Each 10 of plate, crystallite heating board is delivered to：Tongbiao Standard Technology Service Co., Ltd, refers in accordance with European Union 2011/65/EU (ROHS)
Order, carries out detection lead (pb), cadmium (cd), mercury (Hg), Cr VI (Cr6+), PBBs (PBBs), PBDE (PBDEs)
The indices such as content detected that testing result meets above-mentioned ROHS instructions and required.
(measurement is exposed to the high borosilicate glass under high temperature for inorganic non-metallic far infrared graphite resistive film resistivity measurement experiment 6
Glass heating board, ceramic heating plate, the resistance of 3 kinds of inorganic non-metallic far infrared graphite resistive film resistive elements of crystallite heating board)：
Under the conditions of 25 DEG C, above-mentioned high-boron-silicon glass heating board, ceramic heating plate, 3 kinds of nothings of crystallite heating board are tested respectively
The nonmetallic far infrared graphite resistive film resistive element of machine.It is 220 DEG C that sample is placed in into temperature, and humidity is more than in 50 ﹪ baking oven
1000 hours.After baking, the ﹪ to+10 of resistance value -5 ﹪ measured before baking scope is not to be exceeded in its resistance value variations.Test
As a result in prescribed limit, extension is exposed to the time of high temperature, and resistance value will not be impacted.
Inorganic non-metallic far infrared graphite resistive film resistive element accelerated aging test 7 (is tested after the operation of its element, test
The ageing-resistant performance of inorganic non-metallic far infrared graphite resistive film in wet environment)：
By above-mentioned high-boron-silicon glass heating board, ceramic heating plate, 3 kinds of inorganic non-metallic far infrared graphite electricity of crystallite heating board
Each 10 of membrane component is hindered, respectively through stability test, far infrared performance test, environmental-protecting performance experiment, temperature homogeneity, electricity
Resistance rate testing experiment carries out the accelerated aging test of inorganic non-metallic far infrared graphite resistance again.
Experimental condition：Carried out in 40 DEG C ± 2 DEG C of temperature and the ﹪ of relative humidity 80 ± 5 in test box.
Specific method is as follows：By inorganic non-metallic far infrared graphite 3 kinds of elements of resistive film：Pyrex heating board, ceramics
Each 10 of heating board, crystallite heating board is respectively placed in 40 DEG C ± 2 DEG C of temperature and the ﹪ of relative humidity 80 ± 5 in test box, to sample
Product carry out 2000 circulation work operations, and 220V power voltage supplies, the closing in one hour that is powered one hour is a circulation.Complete circulation
After test, power, visual examination are carried out respectively to sample, its power deviation be not above before test the ﹪ of power -5 that measures to+
10 ﹪ scope, its inorganic non-metallic far infrared graphite resistive film surface does not find the defects such as peeling, foaming, cracking.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
Any modifications, equivalent substitutions and improvements made within refreshing and principle etc., should be included in the scope of the protection.
Claims (10)
1. a kind of inorganic non-metallic far infrared graphite resistive film, it is characterised in that be made up of matrix material and liquid medium, described
Matrix material is made up of the following raw materials according of following parts by weight：
Wherein, nano-titanium oxide is contained in the far-infared ceramic powder.
2. inorganic non-metallic far infrared graphite resistive film as claimed in claim 1, it is characterised in that the liquid medium is to have
Machine medium, and the weight ratio of described matrix raw material and the organic media is (1365-2355):(2320-4946).
3. inorganic non-metallic far infrared graphite resistive film as claimed in claim 2, it is characterised in that the organic media includes
The following component of following parts by weight：
1972-4204 parts of terpinol；
209-445 parts of ethyl cellulose；
139-298 parts of silane coupler.
4. the inorganic non-metallic far infrared graphite resistive film as described in claim 1-3 is any, it is characterised in that the graphite powder
Particle diameter be 400-500 mesh；The particle diameter of the ultrafine mica powder is 500-600 mesh；The particle diameter of the far-infared ceramic powder is
500-600 mesh.
5. the inorganic non-metallic far infrared graphite resistive film as described in claim 1-3 is any, it is characterised in that the graphite powder
Parts by weight be 180-280 parts；And/or
The parts by weight of the ultrafine mica powder are 90-180 parts；And/or
The parts by weight of the far-infared ceramic powder are 70-110 parts；And/or
The parts by weight of the bismuth oxide are 330-470 parts；And/or
The weight fraction of the zinc oxide is 260-340 parts；And/or
The parts by weight of the antimony oxide are 110-130 parts；And/or
The parts by weight of the boric acid are 200-240 parts；And/or
The parts by weight of the aluminum oxide are 55-80 parts；And/or
The parts by weight of the strontium carbonate are 85-110 parts；And/or
The parts by weight of the magnesia are 35-60 parts；And/or
The parts by weight of the quartz sand are 30-60 parts；And/or
The parts by weight of the lithium carbonate are 55-100 parts.
6. a kind of preparation method of inorganic non-metallic far infrared graphite resistive film, comprises the following steps：
Formula according to any inorganic non-metallic far infrared graphite resistive films of claim 1-5 weighs each component；
Bismuth oxide, zinc oxide, antimony oxide, boric acid, aluminum oxide, strontium carbonate, magnesia, quartz sand, lithium carbonate heating is molten
Melt, be ground, sieve after cooling, add graphite powder, ultrafine mica powder, far-infared ceramic powder mixing, obtain base material mixture；
It is (1365-2355) according to base material mixture and organic media weight ratio in the base material mixture：(2320-
4946) ratio addition organic media, is mixed to get mixed slurry；
Substrate is provided, by mixed slurry printing on the substrate, is dried, sintering processes, obtains inorganic non-metallic
Far infrared graphite resistive film.
7. the preparation method of inorganic non-metallic far infrared graphite resistive film as claimed in claim 6, it is characterised in that described to add
The temperature of heat fusing is 800-1250 DEG C.
8. the preparation method of inorganic non-metallic far infrared graphite resistive film as claimed in claim 6, it is characterised in that described dry
Dry mode is drying, and drying temperature is 120-280 DEG C；And/or
The temperature of the sintering is 480-680 DEG C.
9. the preparation method of inorganic non-metallic far infrared graphite resistive film as claimed in claim 6, it is characterised in that the print
Brush uses silk-screen printing, wherein, the mesh of silk screen is 100-300 mesh；And/or
The sieving processing is by cooling down, the fused mass after grinding crosses the screen cloth of the mesh of mesh number >=500.
10. inorganic non-metallic far infrared graphite resistive film is in medicine equipment, health treatment, building heating, household appliance technical field
Application, it is characterised in that the inorganic non-metallic far infrared graphite resistive film is claim 1-5 any described inorganic non-
Metal far infrared graphite resistive film.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113800889A (en) * | 2021-09-10 | 2021-12-17 | 厦门海洋芯科技有限公司 | Carbon Hertz film and application thereof |
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