CN107196619A - A kind of preparation method of wedge shaped film - Google Patents
A kind of preparation method of wedge shaped film Download PDFInfo
- Publication number
- CN107196619A CN107196619A CN201710310181.1A CN201710310181A CN107196619A CN 107196619 A CN107196619 A CN 107196619A CN 201710310181 A CN201710310181 A CN 201710310181A CN 107196619 A CN107196619 A CN 107196619A
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- Prior art keywords
- film
- film layer
- layer
- wedge shaped
- preparation
- Prior art date
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Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 23
- 230000007797 corrosion Effects 0.000 claims description 19
- 238000005260 corrosion Methods 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 80
- 239000000463 material Substances 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 14
- 239000010409 thin film Substances 0.000 abstract description 10
- 208000037656 Respiratory Sounds Diseases 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The present invention is directed to the defect of prior art, it is proposed that a kind of preparation method of wedge shaped film.By being modified to typically conventional graphic method, the film that edge is wedge shaped can be prepared, its wedge angle can be adjusted flexibly in the range of 0 90 degree.New thin-film material is deposited on the film with smaller wedge angle, situations such as new thin-film material there will not be crackle, the performance and reliability of device is substantially increased.
Description
Technical field
It is a kind of preparation method of wedge shaped film specifically the present invention relates to field of semiconductor manufacture.
Background technology
In the process of manufacture of the semiconductor devices such as IC, MEMS, the film material after certain is graphical is generally required
Other thin-film material is deposited on material.The thin-film material is prepared using typically conventional graphic method, its edge is often presented nine
Ten degree of right angle, when the marginal position deposits other thin-film material, easily causes the thin-film material newly deposited crackle occur, thin
The film defect strong influence performance and reliability of device.Most typical example is such as preparing the mistake of FBAR
To form bottom electrode, then Cheng Zhong, can be patterned after the lower electrode film of FBAR has been deposited to it
Again piezoelectric membrane is grown on the bottom electrode after graphical.Due to the bottom electrode edge using the method typically commonly used after graphical
Usually right angle, at this edge, piezoelectric membrane can not grow along the direction vertical with substrate surface of needs, thus can cause
The piezoelectric membrane performance of this part is bad, or even can form crackle, leverages the performance and ESD reliabilities of resonator.
The content of the invention
The purpose of the present invention is the defect for prior art, it is proposed that a kind of preparation method of wedge shaped film.It is logical
Cross and typically conventional graphic method is modified, the film that edge is wedge shaped, its wedge angle can be prepared
It can be adjusted flexibly in the range of 0-90 degree.New thin-film material, new film are deposited on the film with smaller wedge angle
Situations such as material there will not be crackle, substantially increase the performance and reliability of device.Specifically, the solution of the present invention is such as
Under：
A kind of preparation method of wedge shaped film, comprises the following steps：
The first film layer is deposited, the first film layer is used to form wedge shaped film；
The second film layer is deposited, second film layer is used for the Patterned masking layer of the first film layer；
The spin coating photoresist layer in second film layer, and the graphical photoresist layer and second film layer,
Form the Patterned masking layer for the first film layer；The mask layer includes patterned second film layer and photoresist
Layer, the marginal portion of patterned second film layer includes recessed region below the photoresist layer；
The graphical the first film layer, forms wedge shaped film.
Further, the thickness of the first film layer is h0, the edge part split-phase of patterned second film layer
Recessed length for the fringe region of the photoresist is a, the wedge angle, θ ≈ actan (h0/a) of the wedge shaped.
Further, in addition to the patterned photoresist layer is removed and the step of second film layer.
Further, it is additionally included in the step of forming other structures on the wedge shaped film.
Further, fringe region of the marginal portion relative to the photoresist of second film layer it is recessed be by
Formed in lateral undercutting of the corrosive liquid below the photoresist.
Further, the length a is controlled by the etching time T to second film layer.
Further, the step of graphical the first film layer includes corrosion the first film layer.
Further, in the step of corrosion the first film layer, corruption of the first film layer in the recessed region
Erosion speed makees the corrosion rate in the region of mask more than second film layer and the region protected is done without mask less than outside
Corrosion rate, and corrosion rate is gradually reduced from the outside to the core, so as to ultimately form wedge structure.
In addition, invention additionally discloses a kind of semiconductor devices, including the wedge structure prepared by the present invention.
Further, the semiconductor devices includes FBAR.
Thus the present invention is formed sediment by forming the bottom film with wedge structure on the film with smaller wedge angle
The new thin-film material of product, situations such as new thin-film material there will not be crackle, substantially increases the performance and reliability of device.
Brief description of the drawings
Fig. 1 is a kind of preparation flow of wedge shaped film of a wherein embodiment of the invention；
Fig. 2 is the film morphology after graphical using general common method；
Fig. 3 is the film photo in kind using general common method after graphical；
Fig. 4 is the film photo in kind after using method of the invention graphical；
Fig. 5 is graphically to obtain the wedge angle of film and the graph of a relation of etching time using the method for the present invention.
Embodiment
Below by drawings and examples, technical scheme is described in further detail.
Embodiment 1
Fig. 1 is a kind of preparation technology flow chart of wedge shaped film of the embodiment of the present invention, and the preparation flow includes：
(a) prepare the silicon chip 100 of single or double polishing, wherein polishing upwardly, carry out standard cleaning.Such as Fig. 1 (a) institutes
Show.
(b) deposition film 200 on silicon chip 100, such as film 200 are Mo；Its thickness is h0, for example, 470nm.As schemed
Shown in 1 (b).
(c) deposition film 300 on film 200, such as film 300 are A1；Its thickness is h1, for example, 160nm.As schemed
Shown in 1 (c).
(d) photoresist 400 uniformly is got rid of on film 300, its thickness ish2, for example, 1um.As shown in Fig. 1 (d).
(e) photoetching development is carried out to the photoresist, the figure pattern required for being formed.As shown in Fig. 1 (e).
(f) under the protection of foregoing photoresist 400, film 300 is corroded, for example with 40 degree of constant temperature
85% phosphoric acid corrodes to Al, control corrosion rate time T.When corroding due to corrosive liquid to 300, portion is had under foregoing photoresist
Lateral undercutting is divided make it that lateral excessive erosion length is a at final 300 (Al) film edges, side zones are 111.Such as Fig. 1 (f) institutes
Show.
(g) under the protection of foregoing photoresist 400 and film 300, film 200 is corroded.For example with normal temperature
H3OP5(concentration is 85%)：HNO3(concentration is 65-68%)=100：3 solution corrodes to the film of film 200.Such as Fig. 1
(g) shown in.In side zones 111, the passage that photoresist and the formation length of film 200 are a, in corrosion process, corrosive liquid
Film 200 can be corroded into this passage on a small quantity.The corrosion rate in 111 regions is more than the region for having film 300 to do mask
Corrosion rate, and less than the outside corrosion rate for doing the region protected without mask, and corrosion rate gradually drops from the outside to the core
It is low, carve type structure so as to ultimately form.Now, required wedge angle, θ ≈ actan (h0/ a), and a can be simply by preceding
The time T for stating corrosion A1 is controlled.
(h) photoresist 400 is removed.As shown in Fig. 1 (h).
(i) film 300 is removed, for example, removes Al.As shown in Fig. 1 (i).
(j) deposition film 500, such as AlN films.Wedge angle, θ is controlled by preceding method, AlN can be effectively controlled
Film improves growth quality of the AlN films in the marginal position of film 200, reduced in the growing state of the marginal position of film 200
There is the possibility of cracks in the marginal position of film 200 in AlN films.As shown in Fig. 1 (j).
Fig. 2 is the film shape for being patterned rear redeposited one layer of new film to lower film using general common method
Looks, after being patterned due to general common method to lower film, the edge of the film is often 90 degree or so of right angle,
This position deposits one layer of new film and crackle often occurs.Fig. 3 is to carry out figure to bottom electrode Mo using general common method
The photo in kind of redeposition AlN films after change, can be clear that, in Mo electrode edges position, the AlN films of deposition go out
Crackle is showed.
Fig. 4 is the photo in kind for being patterned rear depositing Al N thin film to Mo films using the solution of the present invention.Keep it
Remaining condition is constant, and the etching time T on the left side is 10 minutes, and the etching time T on the right is 19 minutes.It can be clear that
The edge wedge angle of the Mo electrodes formed is respectively 60 degree and 9 degree.Illustrate to obtain different wedge angles, it is only necessary to
Simple control corrosion rate time T.
Fig. 5 is patterned the pass of obtained wedge angle and etching time T for use the present invention program to Mo films
System.The functional relation expression formula of wedge angle, θ and etching time T can further be obtained by the fitting of model：(1) time is worked as
During less than or equal to 13 minutes：θ=- 16*T+220；(2) when being more than 13 minutes the time：θ=- 0.9*T+25.
Embodiment 2
The present invention also proposes a kind of FBAR, includes the wedge structure of the formation of embodiment 1, such as in substrate
Upper formation cavity, forms the hearth electrode of wedge structure on cavity, further depositing piezoelectric material layer, top electricity on hearth electrode
Pole.Due to preparing piezoelectric material layer, top electrode layer in wedge structure, split in the film layer that effectively prevent subsequent growth
The defects such as line, substantially increase the performance and reliability of device.
It should be noted last that, the above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted, although ginseng
The present invention is described in detail according to preferred embodiment, it will be understood by those within the art that, can be to the present invention
Technical scheme modify or equivalent substitution, without departing from the spirit and scope of technical solution of the present invention.
Claims (10)
1. a kind of preparation method of wedge shaped film, comprises the following steps：
The first film layer is deposited, the first film layer is used to form wedge shaped film；
The second film layer is deposited, second film layer is used for the Patterned masking layer of the first film layer；
The spin coating photoresist layer in second film layer, and the graphical photoresist layer and second film layer, are formed
Patterned masking layer for the first film layer；The mask layer includes patterned second film layer and photoresist layer,
The marginal portion of patterned second film layer includes recessed region below the photoresist layer；
The graphical the first film layer, forms wedge shaped film.
2. the preparation method of wedge shaped film according to claim 1, it is characterised in that：The thickness of the first film layer
Spend for h0, the recessed length of fringe region of the marginal portion relative to the photoresist of patterned second film layer is
A, the wedge angle e ≈ actan (h0/a) of the wedge shaped.
3. the preparation method of wedge shaped film according to claim 1, it is characterised in that：Also include removing the figure
The step of photoresist layer of change and second film layer.
4. the preparation method of wedge shaped film according to claim 1, it is characterised in that：It is additionally included in the wedge shape
The step of other structures being formed on shape film.
5. the preparation method of wedge shaped film according to claim 2, it is characterised in that：The side of second film layer
Edge split-phase is due to lateral undercutting of the corrosive liquid below the photoresist for the recessed of the fringe region of the photoresist
Formed.
6. the preparation method of wedge shaped film according to claim 2, it is characterised in that：The length a is by described
The etching time T of second film layer is controlled.
7. the preparation method of wedge shaped film according to claim 1, it is characterised in that：Described graphical described first
The step of film layer includes corrosion the first film layer.
8. the preparation method of wedge shaped film according to claim 7, it is characterised in that：The corrosion the first film layer
The step of in, the first film layer is more than the region that second film layer makees mask in the corrosion rate of the recessed region
Corrosion rate and less than the outside corrosion rate for doing the region protected without mask, and corrosion rate gradually drops from the outside to the core
It is low, so as to ultimately form wedge structure.
9. a kind of semiconductor devices, including prepared by the preparation method of wedge shaped film described in claim any one of 1-8
Wedge structure.
10. semiconductor devices according to claim 9, the semiconductor devices includes FBAR.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710310181.1A CN107196619B (en) | 2017-05-04 | 2017-05-04 | Method and device for preparing wedge-shaped thin film of thin film bulk acoustic resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710310181.1A CN107196619B (en) | 2017-05-04 | 2017-05-04 | Method and device for preparing wedge-shaped thin film of thin film bulk acoustic resonator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107196619A true CN107196619A (en) | 2017-09-22 |
| CN107196619B CN107196619B (en) | 2023-05-12 |
Family
ID=59873108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710310181.1A Active CN107196619B (en) | 2017-05-04 | 2017-05-04 | Method and device for preparing wedge-shaped thin film of thin film bulk acoustic resonator |
Country Status (1)
| Country | Link |
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| CN (1) | CN107196619B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1155160A (en) * | 1995-09-28 | 1997-07-23 | 日本电气株式会社 | Method for making of self alignment silicide structural semiconductor device |
| JP2001053067A (en) * | 2000-01-01 | 2001-02-23 | Hitachi Ltd | Active matrix circuit board and its manufacture |
| JP2002009039A (en) * | 2000-06-22 | 2002-01-11 | Victor Co Of Japan Ltd | Manufacturing method of semiconductor device |
| CN1630938A (en) * | 2000-05-23 | 2005-06-22 | 皇家菲利浦电子有限公司 | Semiconductor device and a method for forming patterns |
| CN101661198A (en) * | 2008-08-26 | 2010-03-03 | 北京京东方光电科技有限公司 | Liquid crystal display array substrate and manufacturing method thereof |
| CN102301590A (en) * | 2009-02-20 | 2011-12-28 | 宇部兴产株式会社 | Thin-film piezoelectric resonator and thin-film piezoelectric filter using same |
| CN103864009A (en) * | 2014-03-11 | 2014-06-18 | 中国电子科技集团公司第五十五研究所 | Method for realizing metal film figure with slope-shaped edge by utilizing dielectric film mask plate |
| CN105609415A (en) * | 2015-12-25 | 2016-05-25 | 中国科学院微电子研究所 | Etching method |
-
2017
- 2017-05-04 CN CN201710310181.1A patent/CN107196619B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1155160A (en) * | 1995-09-28 | 1997-07-23 | 日本电气株式会社 | Method for making of self alignment silicide structural semiconductor device |
| JP2001053067A (en) * | 2000-01-01 | 2001-02-23 | Hitachi Ltd | Active matrix circuit board and its manufacture |
| CN1630938A (en) * | 2000-05-23 | 2005-06-22 | 皇家菲利浦电子有限公司 | Semiconductor device and a method for forming patterns |
| JP2002009039A (en) * | 2000-06-22 | 2002-01-11 | Victor Co Of Japan Ltd | Manufacturing method of semiconductor device |
| CN101661198A (en) * | 2008-08-26 | 2010-03-03 | 北京京东方光电科技有限公司 | Liquid crystal display array substrate and manufacturing method thereof |
| CN102301590A (en) * | 2009-02-20 | 2011-12-28 | 宇部兴产株式会社 | Thin-film piezoelectric resonator and thin-film piezoelectric filter using same |
| CN103864009A (en) * | 2014-03-11 | 2014-06-18 | 中国电子科技集团公司第五十五研究所 | Method for realizing metal film figure with slope-shaped edge by utilizing dielectric film mask plate |
| CN105609415A (en) * | 2015-12-25 | 2016-05-25 | 中国科学院微电子研究所 | Etching method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107196619B (en) | 2023-05-12 |
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