CN107195750A - The improvement of LED chip sheath - Google Patents
The improvement of LED chip sheath Download PDFInfo
- Publication number
- CN107195750A CN107195750A CN201610140700.XA CN201610140700A CN107195750A CN 107195750 A CN107195750 A CN 107195750A CN 201610140700 A CN201610140700 A CN 201610140700A CN 107195750 A CN107195750 A CN 107195750A
- Authority
- CN
- China
- Prior art keywords
- chip
- sheath
- glue
- led chip
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Abstract
The invention discloses a kind of improvement of LED chip sheath, improvedd LED chip sheath can be used for LED illumination chip, IC chip, semicon industry etc., its technique is spin-coated in a vacuum outside chip metal wire with peculiar resistant to elevated temperatures UV glue, thickness only need to can just carry out sheath up to 2um with the process materials of original photoresistance.We can be used for chip sheath by UV glue with doping fluorescent powder, Heat Conduction Material, and the thermal conductivity refractive index of UV glue is even more the sheath more than original LED chip.
Description
Technical field
LED chip illumination, semiconductor chip, IC chip.
Background technology
The sheath of general LED chip or IC chip is SiO2 or CVD（Chemical vapor deposition）.
The content of the invention
We are up to the surface sheath that 260 degree of UV glue replaces general LED chip with resistance to heat energy, and its technique is to be spin-coated on the outer thickness of plain conductor in a vacuum to reach 2um, general chip sheath CVD only about 0.1um.The technique and material of original photoresistance have so only been used with regard to sheath can be carried out.
If blue chip we can with doping fluorescent powder
UV
Glue, and other material can be with being doped with conductive powder
UV
Glue, as long as
UV
The thermal conductivity of glue is more than
SiO2
.And
UV
The refractive index of glue is even more to be more than
SiO2
Increase light emission rate.
Either bonding wire or upside-down mounting or sputter, we
UV
Glue can provide ratio
SiO2
Better characteristics.
Encapsulating us equally can be by
IC
Sheath, with doping conductive powder
UV
Glue is done
IC
Sheath.
Claims (2)
1. improvedd LED chip sheath can be used for LED illumination chip, IC chip, semicon industry etc., its technique is spin-coated in a vacuum outside chip metal wire with the UV glue of peculiar 260 degree of heatproof, thickness only need to can just carry out sheath up to 2um with the process materials of original photoresistance.
2. our UV glue can be used for chip sheath with doping fluorescent powder, Heat Conduction Material according to claim 1, the thermal conductivity refractive index of UV glue is even more the sheath more than original LED chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610140700.XA CN107195750A (en) | 2016-03-14 | 2016-03-14 | The improvement of LED chip sheath |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610140700.XA CN107195750A (en) | 2016-03-14 | 2016-03-14 | The improvement of LED chip sheath |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107195750A true CN107195750A (en) | 2017-09-22 |
Family
ID=59870659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610140700.XA Pending CN107195750A (en) | 2016-03-14 | 2016-03-14 | The improvement of LED chip sheath |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107195750A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201916724U (en) * | 2010-11-12 | 2011-08-03 | 北京工业大学 | Micro-volume high brightness luminous unit integrated with multiple LEDs |
| CN104425684A (en) * | 2013-08-20 | 2015-03-18 | 葳天科技股份有限公司 | LED CHIP PACKAGE having topographical glass coating |
| CN204927344U (en) * | 2015-07-28 | 2015-12-30 | 叶逸仁 | Novel LED light source of modelling |
| CN204927327U (en) * | 2015-07-28 | 2015-12-30 | 叶逸仁 | UV packaging structure of SMDLED lamp pearl |
| CN204927328U (en) * | 2015-08-07 | 2015-12-30 | 叶逸仁 | UV packaging structure of LED light source |
-
2016
- 2016-03-14 CN CN201610140700.XA patent/CN107195750A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201916724U (en) * | 2010-11-12 | 2011-08-03 | 北京工业大学 | Micro-volume high brightness luminous unit integrated with multiple LEDs |
| CN104425684A (en) * | 2013-08-20 | 2015-03-18 | 葳天科技股份有限公司 | LED CHIP PACKAGE having topographical glass coating |
| CN204927344U (en) * | 2015-07-28 | 2015-12-30 | 叶逸仁 | Novel LED light source of modelling |
| CN204927327U (en) * | 2015-07-28 | 2015-12-30 | 叶逸仁 | UV packaging structure of SMDLED lamp pearl |
| CN204927328U (en) * | 2015-08-07 | 2015-12-30 | 叶逸仁 | UV packaging structure of LED light source |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170922 |
|
| WD01 | Invention patent application deemed withdrawn after publication |