CN107180905B - Infrared LED lamp and preparation method thereof based on blue chip excitated fluorescent powder - Google Patents
Infrared LED lamp and preparation method thereof based on blue chip excitated fluorescent powder Download PDFInfo
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- CN107180905B CN107180905B CN201710267410.6A CN201710267410A CN107180905B CN 107180905 B CN107180905 B CN 107180905B CN 201710267410 A CN201710267410 A CN 201710267410A CN 107180905 B CN107180905 B CN 107180905B
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- led lamp
- infrared led
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- 239000000843 powder Substances 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 238000004806 packaging method and process Methods 0.000 claims abstract description 14
- 239000004033 plastic Substances 0.000 claims abstract description 11
- 229920003023 plastic Polymers 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 229910052693 Europium Inorganic materials 0.000 claims description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 14
- 229910052765 Lutetium Inorganic materials 0.000 claims description 14
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 14
- 229910052733 gallium Inorganic materials 0.000 claims description 14
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 14
- 229910052727 yttrium Inorganic materials 0.000 claims description 6
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000004814 polyurethane Substances 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 4
- 241001062009 Indigofera Species 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- HBGPNLPABVUVKZ-POTXQNELSA-N (1r,3as,4s,5ar,5br,7r,7ar,11ar,11br,13as,13br)-4,7-dihydroxy-3a,5a,5b,8,8,11a-hexamethyl-1-prop-1-en-2-yl-2,3,4,5,6,7,7a,10,11,11b,12,13,13a,13b-tetradecahydro-1h-cyclopenta[a]chrysen-9-one Chemical compound C([C@@]12C)CC(=O)C(C)(C)[C@@H]1[C@H](O)C[C@]([C@]1(C)C[C@@H]3O)(C)[C@@H]2CC[C@H]1[C@@H]1[C@]3(C)CC[C@H]1C(=C)C HBGPNLPABVUVKZ-POTXQNELSA-N 0.000 description 1
- PFRGGOIBYLYVKM-UHFFFAOYSA-N 15alpha-hydroxylup-20(29)-en-3-one Natural products CC(=C)C1CCC2(C)CC(O)C3(C)C(CCC4C5(C)CCC(=O)C(C)(C)C5CCC34C)C12 PFRGGOIBYLYVKM-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- CTKINSOISVBQLD-UHFFFAOYSA-N Glycidol Chemical compound OCC1CO1 CTKINSOISVBQLD-UHFFFAOYSA-N 0.000 description 1
- SOKRNBGSNZXYIO-UHFFFAOYSA-N Resinone Natural products CC(=C)C1CCC2(C)C(O)CC3(C)C(CCC4C5(C)CCC(=O)C(C)(C)C5CCC34C)C12 SOKRNBGSNZXYIO-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
Abstract
The present invention discloses a kind of infrared LED lamp and preparation method thereof based on blue chip excitated fluorescent powder, wherein, the infrared LED lamp includes lampshade, the cathode column in lampshade and anode posts, the cathode top end is provided with an accommodating space, blue chip is provided in the accommodating space, the mixture of fluorescent powder and packaging plastic is covered on the blue chip, the fluorescent powder includes the rare earth element of the nitrogen of 40-70%, the element silicon of 10-30% and 6-20% by weight percentage；The present invention no replacement is required chip, need to be only adjusted by the ratio to fluorescent powder, can obtain the infrared LED lamp of respective wavelength；Cost of manufacture can be substantially reduced by preparing infrared LED lamp using method provided by the invention, and can flexibly produce the LED light that can issue IR wavelength.
Description
Technical field
The present invention relates to the LED field more particularly to a kind of infrared LED lamp based on blue chip excitated fluorescent powder and its
Preparation method.
Background technique
Luminescence generated by light refers to that luminescence phenomenon caused by using up excitation illuminator, the luminescent device being made into using this phenomenon are wide
It is general to be used in daily life.
The prior art is during preparation can issue the LED light of infrared light, usually according to wavelength needs, it is previously prepared go out
Then the infrared chip is used in LED light by the infrared ray chip with corresponding wavelength；However use existing method preparation
LED light wavelength limitation is larger, and launch wavelength is limited to the intrinsic range of chip, and it is wider cannot to be quickly obtained required range
Wavelength；The wavelength even having is without corresponding chip, and production chains are poor, and when required wavelength is higher, and preparation is corresponding
The chip cost of wavelength is too high.
Therefore, the existing technology needs to be improved and developed.
Summary of the invention
In view of above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide one kind to be based on blue chip excitated fluorescent powder
Infrared LED lamp and preparation method thereof, it is intended to solve existing infrared LED lamp and be limited to the natural wavelength range of chip, production spirit
Activity is poor, and the problem that preparation cost is high.
Technical scheme is as follows:
A kind of infrared LED lamp based on blue chip excitated fluorescent powder, wherein the cathode including lampshade, in lampshade
Column and anode posts, the cathode top end are provided with an accommodating space, and blue chip, the indigo plant are provided in the accommodating space
The mixture of fluorescent powder and packaging plastic is covered on optical chip, the fluorescent powder includes the nitrogen member of 40-70% by weight percentage
The rare earth element of element, the element silicon of 10-30% and 6-20%.
The infrared LED lamp based on blue chip excitated fluorescent powder, wherein the rare earth element be europium, yttrium, cerium,
One of gallium, lutetium, scandium or gadolinium are a variety of.
The infrared LED lamp based on blue chip excitated fluorescent powder, wherein the fluorescent powder is by weight percentage
The element silicon of nitrogen, 20-30% including 50-60%, the europium element of 2-3%, the lutetium element of 1-2%, 2-3% gallium element and
The yttrium of 1-2%.
The infrared LED lamp based on blue chip excitated fluorescent powder, wherein the fluorescent powder is by weight percentage
The element silicon of nitrogen, 10-20% including 60-70%, the europium element of 1-2%, the lutetium element of 2-3%, 2-3% gallium element and
The Ce elements of 1-2%.
The infrared LED lamp based on blue chip excitated fluorescent powder, wherein the fluorescent powder is by weight percentage
The element silicon of nitrogen, 20-30% including 40-50%, the europium element of 4-5%, the lutetium element of 2-3%, 8-10% gallium element and
The Ce elements of 1-2%.
The infrared LED lamp based on blue chip excitated fluorescent powder, wherein the packaging plastic material is asphalt mixtures modified by epoxy resin
One of rouge, modified epoxy, organosilicon or PU polyurethane.
The infrared LED lamp based on blue chip excitated fluorescent powder, wherein the wavelength of the blue chip is 440-
460nm。
The infrared LED lamp based on blue chip excitated fluorescent powder, wherein the positive and negative anodes of the blue chip are corresponding
Ground is electrically connected with cathode column and anode posts.
A kind of preparation method of the infrared LED lamp based on blue chip excitated fluorescent powder, wherein comprising steps of
A, blue chip is fixed on to the accommodating space of cathode column；
B, using plain conductor by the correspondingly connected cathode column of the positive and negative anodes of blue chip and anode posts；
C, in the mixture of blue chip surface sprayed with fluorescent powder and packaging plastic, curing process is then carried out, it is described
Fluorescent powder includes the rare earth element of the nitrogen of 40-70%, the element silicon of 10-30% and 6-20% by weight percentage；
D, light splitting packaging is carried out after the completion of solidification, obtains infrared LED lamp.
The utility model has the advantages that fluorescent powder of the present invention using blue chip excitation different proportion, so that light wave can be emitted by obtaining
Infrared LED lamp within the scope of 850-1400nm；The present invention, only need to be using blue chip and right without using infrared emission chip
The ratio of fluorescent powder is adjusted, and can obtain the infrared LED lamp of respective wavelength；It is prepared using method provided by the invention infrared
LED light can be substantially reduced cost of manufacture, and can flexibly produce the LED light that can issue IR wavelength.
Detailed description of the invention
Fig. 1 is a kind of structural representation of the infrared LED lamp preferred embodiment based on blue chip excitated fluorescent powder of the present invention
Figure.
Fig. 2 is a kind of preparation method preferred embodiment of the infrared LED lamp based on blue chip excitated fluorescent powder of the present invention
Flow chart.
Specific embodiment
The present invention provides a kind of infrared LED lamp and preparation method thereof based on blue chip excitated fluorescent powder, to make this hair
Bright purpose, technical solution and effect are clearer, clear, and the present invention is described in more detail below.It should be appreciated that herein
Described specific embodiment is only used to explain the present invention, is not intended to limit the present invention.
Referring to Fig. 1, Fig. 1 is that a kind of infrared LED lamp based on blue chip excitated fluorescent powder provided by the invention is preferable
The structural schematic diagram of embodiment, as shown, the infrared LED lamp includes lampshade 10,20 and of cathode column in lampshade 10
Anode posts 30,20 top of cathode column are provided with an accommodating space 40, are provided with blue chip 50 in the accommodating space 40,
The mixture of fluorescent powder 60 Yu packaging plastic is covered on the blue chip 50, the fluorescent powder 60 includes by weight percentage
The rare earth element of the nitrogen of 40-70%, the element silicon of 10-30% and 6-20%, the rare earth element be europium, yttrium, cerium, gallium,
One of lutetium, scandium or gadolinium are a variety of.
Specifically, the infrared LED lamp further includes a bottom plate 70 cooperated with lampshade 10, and the lampshade is formed with bottom plate
One sealing space, there are two perforation, the cathode column 20 and anode posts 30 are corresponding across described for 70 bottom of the bottom plate setting
Two perforation, so that the cathode column and anode posts one end are located inside lampshade, the other end is located at outside lampshade.
Further, the top of the cathode column is provided with an accommodating space, the accommodating space can be set as needed for
The various shapes such as round, rectangular, the accommodating space is for installing blue chip；Specifically, it is provided on the blue chip
The cathode of positive and negative anodes, the blue chip is connect with anode posts by conducting wire, and anode and the cathode column of the blue chip use
The mode of ultrasonic bonding is electrically connected.
Further, since the prior art is during preparation can issue the LED light of infrared light, usually according to wavelength need
It wants, then the infrared chip is used in LED light by the previously prepared infrared ray chip for providing corresponding wavelength；Using existing
The LED light wavelength limitation of method preparation is larger, and launch wavelength is limited to the intrinsic range of chip, needed for cannot being quickly obtained
The wider array of wavelength of range；For the wavelength even having without corresponding chip, production chains are poor, and when required wavelength is higher
When, the chip cost for preparing respective wavelength is too high.In view of the deficiencies of the prior art, the present invention is by configuring heterogeneity, difference
The fluorescent powder of ratio, and only need that wave-length coverage can be inspired 850-1400nm's using a kind of blue chip of wavelength
Infrared light, specific as follows shown:
It, only need to be by the proportion of the fluorescent powder when preparation can issue the infrared LED lamp that infrared wavelength is 850-1040nm
Adjustment are as follows: by weight percentage include the nitrogen of 40-50%, the element silicon of 20-30%, the europium element of 4-5%, 2-3% lutetium
The Ce elements of element, the gallium element of 8-10% and 1-2%；
It, only need to be by the proportion of the fluorescent powder when preparation can issue the infrared LED lamp that infrared wavelength is 1040-1260nm
Adjustment are as follows: by weight percentage include the nitrogen of 60-70%, the element silicon of 10-20%, the europium element of 1-2%, 2-3% lutetium
The Ce elements of element, the gallium element of 2-3% and 1-2%；
It, only need to be by the proportion of the fluorescent powder when preparation can issue the infrared LED lamp that infrared wavelength is 1260-1400nm
Adjustment are as follows: by weight percentage include the nitrogen of 50-60%, the element silicon of 20-30%, the europium element of 2-3%, 1-2% lutetium
The yttrium of element, the gallium element of 2-3% and 1-2%.
Further, blue chip selected by the present invention is the InGaN chip that wavelength is 440-460nm, the preferably indigo plant of 450nm
Optical chip.
Further, in the present invention, the packaging plastic material is epoxy resin, modified epoxy, organosilicon or PU poly-
One of urethane, the modified epoxy can adulterate cycloaliphatic epoxy resin, glycidol for modified nano zinc oxide
Esters epoxy resin etc.；The preferred modified nano zinc oxide doping cycloaliphatic epoxy resin of the present invention is described as packaging plastic material
Modified nano zinc oxide doping cycloaliphatic epoxy resin is high with transparency, anti-ultraviolet ageing performance is good, cohesive force is strong, solidification
Fastly, the characteristics such as viscosity is low, the performance of LED light can be obviously improved as packaging plastic material.
Further, the present invention also provides a kind of preparation method of infrared LED lamp based on blue chip excitated fluorescent powder,
In, as shown in Fig. 2, comprising steps of
S1, the accommodating space that blue chip is fixed on to cathode column；
S2, using plain conductor by the correspondingly connected cathode column of the positive and negative anodes of blue chip and anode posts；
S3, in the mixture of blue chip surface sprayed with fluorescent powder and packaging plastic, then carry out curing process, it is described
Fluorescent powder includes the rare earth element of the nitrogen of 40-70%, the element silicon of 10-30% and 6-20% by weight percentage；
Light splitting packaging is carried out after the completion of S4, solidification, obtains infrared LED lamp.
Preparation method provided by the invention is simply easily realized, based under the premise of blue chip, need to only adjust fluorescent powder
Proportion can prepare the infrared LED that can issue light wave within the scope of 850-1400nm；Preparation method of the invention obviously drops
The low cost of manufacture of infrared LED, and improve the flexibility of production.
In conclusion fluorescent powder of the present invention using blue chip excitation different proportion, so that light wave can be emitted by obtaining
Infrared LED lamp within the scope of 850-1400nm；The present invention, only need to be based on blue chip and right without using infrared emission chip
The ratio of fluorescent powder is adjusted, and can obtain the infrared LED lamp of respective wavelength；It is prepared using method provided by the invention infrared
LED light can be substantially reduced cost of manufacture, and can flexibly produce the LED light that can issue IR wavelength.
It should be understood that the application of the present invention is not limited to the above for those of ordinary skills can
With improvement or transformation based on the above description, all these modifications and variations all should belong to the guarantor of appended claims of the present invention
Protect range.
Claims (5)
1. a kind of infrared LED lamp based on blue chip excitated fluorescent powder, which is characterized in that including lampshade, in lampshade
Cathode column and anode posts, the cathode top end are provided with an accommodating space, and blue chip, institute are provided in the accommodating space
The mixture that fluorescent powder and packaging plastic are covered on blue chip is stated,
The fluorescent powder include by weight percentage the nitrogen of 50-60%, the element silicon of 20-30%, 2-3% europium element, 1-
2% lutetium element, the gallium element of 2-3% and the yttrium of 1-2%；
Or the fluorescent powder include by weight percentage the nitrogen of 60-70%, the element silicon of 10-20%, 1-2% europium element,
Lutetium element, the gallium element of 2-3% and the Ce elements of 1-2% of 2-3%；
Or the fluorescent powder include by weight percentage the nitrogen of 40-50%, the element silicon of 20-30%, 4-5% europium element,
Lutetium element, the gallium element of 8-10% and the Ce elements of 1-2% of 2-3%.
2. the infrared LED lamp according to claim 1 based on blue chip excitated fluorescent powder, which is characterized in that the envelope
Dress glue material is one of epoxy resin, modified epoxy, organosilicon or PU polyurethane.
3. the infrared LED lamp according to claim 1 based on blue chip excitated fluorescent powder, which is characterized in that the indigo plant
The wavelength of optical chip is 440-460nm.
4. the infrared LED lamp according to claim 1 based on blue chip excitated fluorescent powder, which is characterized in that the indigo plant
The positive and negative anodes of optical chip are accordingly electrically connected with cathode column and anode posts.
5. a kind of preparation method of the infrared LED lamp based on blue chip excitated fluorescent powder, which is characterized in that comprising steps of
A, blue chip is fixed on to the accommodating space of cathode column；
B, using plain conductor by the correspondingly connected cathode column of the positive and negative anodes of blue chip and anode posts；
C, in the mixture of blue chip surface sprayed with fluorescent powder and packaging plastic, curing process is then carried out；
D, light splitting packaging is carried out after the completion of solidification, obtains infrared LED lamp；
The fluorescent powder include by weight percentage the nitrogen of 50-60%, the element silicon of 20-30%, 2-3% europium element, 1-
2% lutetium element, the gallium element of 2-3% and the yttrium of 1-2%；
Or the fluorescent powder include by weight percentage the nitrogen of 60-70%, the element silicon of 10-20%, 1-2% europium element,
Lutetium element, the gallium element of 2-3% and the Ce elements of 1-2% of 2-3%；
Or the fluorescent powder include by weight percentage the nitrogen of 40-50%, the element silicon of 20-30%, 4-5% europium element,
Lutetium element, the gallium element of 8-10% and the Ce elements of 1-2% of 2-3%.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710267410.6A CN107180905B (en) | 2017-04-21 | 2017-04-21 | Infrared LED lamp and preparation method thereof based on blue chip excitated fluorescent powder |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710267410.6A CN107180905B (en) | 2017-04-21 | 2017-04-21 | Infrared LED lamp and preparation method thereof based on blue chip excitated fluorescent powder |
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| CN107180905B true CN107180905B (en) | 2019-07-23 |
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| CN110970541B (en) * | 2018-09-29 | 2023-04-21 | 有研稀土新材料股份有限公司 | Semiconductor light source and optical device prepared by same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202268389U (en) * | 2011-10-13 | 2012-06-06 | 同济大学 | Near-infrared diode using blue light chip to stimulate down-conversion phosphor |
| CN103555325A (en) * | 2013-11-01 | 2014-02-05 | 江苏罗化新材料有限公司 | Red nitride fluorescent powder and preparation method thereof |
| CN105514250A (en) * | 2015-12-02 | 2016-04-20 | 蒋金元 | Light source and packaging method thereof |
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2017
- 2017-04-21 CN CN201710267410.6A patent/CN107180905B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202268389U (en) * | 2011-10-13 | 2012-06-06 | 同济大学 | Near-infrared diode using blue light chip to stimulate down-conversion phosphor |
| CN103555325A (en) * | 2013-11-01 | 2014-02-05 | 江苏罗化新材料有限公司 | Red nitride fluorescent powder and preparation method thereof |
| CN105514250A (en) * | 2015-12-02 | 2016-04-20 | 蒋金元 | Light source and packaging method thereof |
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