CN107171292A - A kind of device for suppressing shut-off overvoltage based on SiC MOSFET DC solid circuit breakers - Google Patents
A kind of device for suppressing shut-off overvoltage based on SiC MOSFET DC solid circuit breakers Download PDFInfo
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- CN107171292A CN107171292A CN201710565467.4A CN201710565467A CN107171292A CN 107171292 A CN107171292 A CN 107171292A CN 201710565467 A CN201710565467 A CN 201710565467A CN 107171292 A CN107171292 A CN 107171292A
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- circuit
- solid
- piezo
- resistance
- circuit breaker
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
- H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Driving Mechanisms And Operating Circuits Of Arc-Extinguishing High-Tension Switches (AREA)
- Electronic Switches (AREA)
Abstract
The present invention relates to a kind of device for suppressing shut-off overvoltage based on SiC MOSFET DC solid circuit breakers, belong to DC solid circuit breaker technical field, the device includes DC solid circuit breaker, also include current detecting system, drive system, power semiconductor solid switch device, buffer circuit branch road and energy absorption branch road, buffer circuit branch route piezo-resistance is constituted, and the overvoltage at initial stage is turned off for suppressing DC solid circuit breaker；Energy absorption branch road is also made up of piezo-resistance, the energy for absorbing straight-flow system stray inductance.By buffer circuit part and the reasonable disposition of energy absorbing portion, the overvoltage that SiC MOSFET DC solid circuit breakers turn off initial stage can be significantly inhibited.The device for suppressing shut-off overvoltage based on SiC MOSFET DC solid circuit breakers that the present invention is provided, reliability easy and effective and that DC solid circuit breaker can be improved.
Description
Technical field
The invention belongs to DC solid circuit breaker technical field, it is related to a kind of based on SiC MOSFET DC solid circuit breakers
Suppress the device of shut-off overvoltage.
Background technology
DC solid circuit breaker requirement can promptly isolate and remove failure, be one of indispensable equipment of straight-flow system.
With the continuous progress of carborundum (Silicon Carbide, SiC) technology, by silicone carbide metal oxide FET
The DC solid that (Metal Oxide Semiconductor Field-Effect Transistor, SiC MOSFET) is constituted
Breaker is fast because of its switching speed, and conduction loss is low, and can work at higher ambient temperatures, in recent years in power distribution network application
Attract attention.However, compared to Si devices, SiC MOSFET turn-off speeds are fast, up to tens ns, it is easy to cause larger wink
When due to voltage spikes, therefore, how to suppress the voltage oscillation in SiC MOSFET turn off process, crest voltage reduced, for direct current
Solid circuit breaker and the safe and reliable operation of straight-flow system are significant.The resistance-capacitance commonly used at present
(resistance capacitance, RC) and resistance-electric capacity-diode (resistance capacitance diode,
RCD) selection of the method parameter of buffer circuit need to consider many factors with matching, in actual use in the presence of certain difficulty
Degree；And the method for using increase raster data model resistance, the turn-off time is extended, breaker loss is added, SiC has been sacrificed
MOSFET advantage, it is also possible to cause the PN junction of power device to overheat because the turn-off time is long, damages device；Using di/dt
The method for controlling circuit, realizes excessively complexity, and component is too many, and reliability also can be by a certain degree of influence.Therefore, in order to
Solving SiC MOSFET is used for the shut-off initial voltage overshooting problem that DC solid circuit breaker easily occurs, and is badly in need of a kind of simple and has
A kind of method of effect.
The content of the invention
In view of this, shut-off is suppressed based on SiC MOSFET DC solid circuit breakers it is an object of the invention to provide one kind
The device of overvoltage, so as to effectively realize the suppression that overvoltage at initial stage is turned off based on SiC MOSFET DC solid circuit breakers, is had
Beneficial to the reliability for improving DC solid circuit breaker.
To reach above-mentioned purpose, the present invention provides following technical scheme：
A kind of device for suppressing shut-off overvoltage based on SiC MOSFET DC solid circuit breakers, includes DC solid open circuit
Device, the DC solid circuit breaker also includes current detecting system, drive system and power semiconductor solid switch device；It is described
Power semiconductor solid switch device, which is arranged in main circuit, is used for the division of main circuit, and the current detecting system is used to detect
The main circuit current of the DC solid circuit breaker, the drive system receives the signal from current detecting system, and controls
The division of the power semiconductor solid switch device；
The current detecting system is used to detect whether circuit breaks down and determine that breaker turns off the moment；
The drive system is used to control DC solid circuit breaker normal work and disjunction；
The power semiconductor solid switch device is for maintaining disengagement failure electricity when straight-flow system normal work and failure
Stream ensures straight-flow system safety；
The DC solid circuit breaker also includes buffer circuit branch road and energy absorption branch road, and the buffer circuit branch road is
The buffer circuit being made up of piezo-resistance, the overvoltage at initial stage is turned off for suppressing the DC solid circuit breaker；
The energy absorption branch road is the energy absorption circuit being made up of piezo-resistance, for absorbing the parasitic electricity of straight-flow system
The energy of sense.
Further, the energy absorption circuit that the buffer circuit and the piezo-resistance that the piezo-resistance is constituted are constituted according to
Formula：
Configured, in formula, a represents the energy absorption circuit that the buffer circuit and piezo-resistance of piezo-resistance composition are constituted
Rated voltage ratio, UMOV_inRepresent the rated voltage for the buffer circuit that piezo-resistance is constituted, UMOV_exRepresent piezo-resistance structure
Into energy absorption circuit rated voltage.
The beneficial effects of the present invention are：By the present invention in that realizing piezo-resistance as buffer circuit with piezo-resistance
Absorb energy and suppress the separation of overvoltage function, wherein buffer circuit piezo-resistance is used to suppress DC solid circuit breaker shut-off
The overvoltage at initial stage, and energy absorption piezo-resistance, the energy for absorbing straight-flow system stray inductance, are reduced to pressure-sensitive electricity
The requirement of resistance, passes through the piezo-resistance and the specified electricity of the piezo-resistance of energy absorbing portion in reasonable disposition buffer circuit part
Pressure ratio rate, can effectively realize the suppression that overvoltage at initial stage is turned off based on SiC MOSFET DC solid circuit breakers, be conducive to improving
The reliability of DC solid circuit breaker.
Brief description of the drawings
In order that the purpose of the present invention, technical scheme and beneficial effect are clearer, the present invention provides drawings described below and carried out
Explanation：
Fig. 1 be the application in suppression SiC MOSFET DC solid circuit breaker overvoltage methods schematic diagram；
Fig. 2 is the schematic diagram of this method；
Fig. 3, Fig. 4 are the effect emulation figure using this method；
DC solid circuit breaker voltage and absorption energy design sketch when Fig. 5, Fig. 6 are a different.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
Fig. 1 be the application in suppression SiC MOSFET DC solid circuit breaker overvoltage methods schematic diagram；
The device for suppressing shut-off overvoltage based on SiC MOSFET DC solid circuit breakers of the embodiment of the present invention includes straight
Flow the drive system of the integrated fault current detection circuit of solid circuit breaker, logic judgment process circuit and drive circuit, Yi Jizuo
For the power semiconductor of solid-state switch, power semiconductor solid switch device is arranged on point for main circuit in main circuit
Close, current detecting system is used for the main circuit current for detecting DC solid circuit breaker, and logic judgment process circuit is to current detecting
The signal of circuit output is judged that drive system receives the signal from current detecting system, and controls power semiconductor to consolidate
The division of state switching device, wherein：
Fault current detection circuit, the threshold value of some setting is reached for failure judgement electric current, to determine that breaker is closed
The disconnected moment；
Logic judgment process circuit, judges for the signal to fault current detection circuit output, is breaking down
When pulse control signal is cut off in time, it is ensured that device and circuit are without prejudice；
Drive circuit, for controlling DC solid circuit breaker normal work and disjunction.
Solid-state switch, for maintaining straight-flow system normal work, and disengagement failure electric current ensures straight-flow system peace during failure
Entirely.
The present invention's also includes buffer circuit part and energy absorbing portion, wherein：
Buffer circuit part, is made up of piezo-resistance (Metal Oxide Varistor, MOV), is consolidated for suppressing direct current
State breaker turns off the overvoltage at initial stage；
Energy absorbing portion, is also made up of MOV, the energy for absorbing straight-flow system stray inductance.
The MOV of MOV and energy absorbing portion in buffer circuit part are configured according to the following equation：
In formula, a represents the specified electricity for the energy absorption circuit that the buffer circuit and piezo-resistance of piezo-resistance composition are constituted
Pressure ratio rate, UMOV_inRepresent the rated voltage for the buffer circuit that piezo-resistance is constituted, UMOV_exRepresent the energy that piezo-resistance is constituted
The rated voltage of absorbing circuit.
The buffer circuit part of the present invention, does not absorb or only absorbs part energy, breaks for suppressing DC solid
Road device turns off the overvoltage at initial stage；
The energy absorbing portion of the present invention, absorption system overwhelming majority energy；
The ratio of buffer circuit part and energy absorbing portion MOV rated voltages also and should try one's best and avoid circuit breaker electric from extruding
Now vibrate.
In order to further illustrate the principle of this method, as shown in Figure 2：
Due to MOV_inClose to SiC MOSFET, stray inductance L 'stRelative to outer shroud LstIt is smaller, t1Moment fault current is first
First to MOV_inBranch road is shifted, electric current IMOV_inIt was slowly increased before this, then rapid increase, and reached its peak value, then reduce, such as schemed
[t in 21,t3] stage.
In [t2,t3] stage, MOV_inBranch current can also be to MOV_exBranch road is shifted, but, electric current IMOV_exIncreased speed
Degree is smaller, and this is primarily due to caused by outer shroud, inner ring MOV have a voltage difference.As electric current IMOV_inWhen decaying to zero,
Voltage UswitchDecay to close to MOV_exVoltage UMOV_exLevel, now IbreakeTransfer process does not terminate also, electric current only to
MOV_exBranch road is shifted.Work as IswitchWhen being reduced to zero, IMOV_exReach maximum, IbreakeTransfer process terminates, Uswitch
Reach UMOV_exLevel, now, MOV_exStart to absorb energy, IbreakerStart to decay, after certain time, IbreakerDecay to
Zero, breaker power cut-off, fault current is eliminated.
During breaker actuation, MOV_inThe time that branch road has electric current to flow through is very short, and has flowed only through a seldom part
Electric current, MOV_inThe energy very little of absorption, most energy are by MOV_exAbsorb, but solid circuit breaker crest voltage by
MOV_inC-V characteristic determine.
In order to contrast the effect that DC solid circuit breaker uses this method, as shown in Figure 3, Figure 4.Contrast with and without
The simulation waveform of this method is understood：
(DC voltage is 360V, and energy absorption MOV is K385 (i.e. maximum to continue direct current work under identical simulated conditions
Make voltage 385V), stray inductance LstFor 6 μ H, cut-off current is 11.5A), when not using this method, DC solid circuit breaker is closed
The overvoltage peak value at disconnected initial stage is 1130V, and when employing this method, DC solid circuit breaker turns off the overvoltage peak value at initial stage
For 850V, the voltage peak at shut-off initial stage reduces 380 V, voltage with buffer circuit MOV voltage peak 840V relatively
Vibration is also significantly inhibited.
Finally, buffer circuit MOV rated voltages are determined according to following formula：
In formula, a represents the specified electricity for the energy absorption circuit that the buffer circuit and piezo-resistance of piezo-resistance composition are constituted
Pressure ratio rate, UMOV_inRepresent the rated voltage for the buffer circuit that piezo-resistance is constituted, UMOV_exRepresent the energy that piezo-resistance is constituted
The rated voltage of absorbing circuit.
Be K385 in energy absorption MOV according to above-mentioned formula, and buffer circuit MOV be respectively K385, K420, K505,
When K560, K585, K615, K670, buffer circuit MOV absorbs energy percentage and breaker crest voltage, and circuit breaker electric
Pressure, as shown in Figure 5, Figure 6：
1) during 1≤a≤1.2, buffering MOV absorbs energy to be reduced rapidly with a increase, works as a>When 1.2, buffering MOV absorbs
Energy is slowly reduced with a increase, after a=1.4, and buffering MOV absorption energy is very small, changes unobvious, it is believed that
Whole energy absorbs by energy absorption MOV, and matched curve is approximately exponential function；
2) breaker crest voltage is linearly increasing with certain slope before this with a increase, then reaches saturation, slow to increase
Plus, but all crest voltages, than not using 1130V during MOV buffer circuits small, matched curve is approximately that second order is more
Item formula function, when a reaches 1.45, circuit breaker voltage vibrates, and increasingly severe with a increase.
3) according to above-mentioned analysis, absorb energy, it is necessary to consider it in selection buffering MOV rated voltage, suppress
Circuit breaker voltage, and should try one's best and avoid circuit breaker voltage from vibrating, in the present embodiment, buffer MOV rated voltage
Determined according to 1.3 ＜ a ＜ 1.45.
Finally illustrate, preferred embodiment above is only unrestricted to illustrate the technical scheme of invention, although passing through
The present invention is described in detail for above preferred embodiment, it is to be understood by those skilled in the art that can be in shape
Various changes are made in formula and to it in details, without departing from claims of the present invention limited range.
Claims (2)
1. a kind of device for suppressing shut-off overvoltage based on SiC MOSFET DC solid circuit breakers, includes DC solid open circuit
Device, it is characterised in that：The DC solid circuit breaker is also opened including current detecting system, drive system and power semiconductor solid-state
Close device；The power semiconductor solid switch device, which is arranged in main circuit, is used for the division of main circuit, the current detecting
System is used for the main circuit current for detecting the DC solid circuit breaker, and the drive system is received from current detecting system
Signal, and control the division of the power semiconductor solid switch device；
The current detecting system is used to detect whether circuit breaks down and determine that breaker turns off the moment；
The drive system is used to control DC solid circuit breaker normal work and disjunction；
The power semiconductor solid switch device is used to maintain disengagement failure electric current when straight-flow system normal work and failure to protect
Demonstrate,prove straight-flow system safety；
The DC solid circuit breaker also includes buffer circuit branch road and energy absorption branch road, the buffer circuit branch road and energy
Branch circuit parallel connection is absorbed to be arranged on the main circuit of the DC solid circuit breaker；
The buffer circuit branch road is the buffer circuit being made up of piezo-resistance, for suppressing the DC solid circuit breaker shut-off
The overvoltage at initial stage；
The energy absorption branch road is the energy absorption circuit being made up of piezo-resistance, for absorbing straight-flow system stray inductance
Energy.
2. a kind of dress for suppressing shut-off overvoltage based on SiC MOSFET DC solid circuit breakers according to claim 1
Put, it is characterised in that：The energy absorption circuit that the buffer circuit and the piezo-resistance that the piezo-resistance is constituted are constituted according to
Formula：
<mrow>
<mn>1.3</mn>
<mo><</mo>
<mi>a</mi>
<mo>=</mo>
<mfrac>
<msub>
<mi>U</mi>
<mrow>
<mi>M</mi>
<mi>O</mi>
<mi>V</mi>
<mo>_</mo>
<mi>i</mi>
<mi>n</mi>
</mrow>
</msub>
<msub>
<mi>U</mi>
<mrow>
<mi>M</mi>
<mi>O</mi>
<mi>V</mi>
<mo>_</mo>
<mi>e</mi>
<mi>x</mi>
</mrow>
</msub>
</mfrac>
<mo><</mo>
<mn>1.45</mn>
</mrow>
Configured, in formula, a represents the volume for the energy absorption circuit that the buffer circuit and piezo-resistance of piezo-resistance composition are constituted
Determine voltage ratio, UMOV_inRepresent the rated voltage for the buffer circuit that piezo-resistance is constituted, UMOV_exRepresent what piezo-resistance was constituted
The rated voltage of energy absorption circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710565467.4A CN107171292B (en) | 2017-07-12 | 2017-07-12 | A kind of device inhibiting shutdown overvoltage based on SiC MOSFET DC solid circuit breaker |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710565467.4A CN107171292B (en) | 2017-07-12 | 2017-07-12 | A kind of device inhibiting shutdown overvoltage based on SiC MOSFET DC solid circuit breaker |
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| Publication Number | Publication Date |
|---|---|
| CN107171292A true CN107171292A (en) | 2017-09-15 |
| CN107171292B CN107171292B (en) | 2019-06-07 |
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| CN201710565467.4A Active CN107171292B (en) | 2017-07-12 | 2017-07-12 | A kind of device inhibiting shutdown overvoltage based on SiC MOSFET DC solid circuit breaker |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109066609A (en) * | 2018-07-26 | 2018-12-21 | 西安交通大学 | A kind of all solid state dc circuit breaker topological structure based on cascade SiC MOSFET |
| CN111579958A (en) * | 2020-05-20 | 2020-08-25 | 全球能源互联网研究院有限公司 | IGBT switching characteristic test circuit and test method |
| CN111952991A (en) * | 2020-08-11 | 2020-11-17 | 太原理工大学 | Master-slave driving device series-connection type direct current circuit breaker and control method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109066609A (en) * | 2018-07-26 | 2018-12-21 | 西安交通大学 | A kind of all solid state dc circuit breaker topological structure based on cascade SiC MOSFET |
| CN109066609B (en) * | 2018-07-26 | 2020-03-17 | 西安交通大学 | All-solid-state direct current breaker topological structure based on cascade SiC MOSFET |
| CN111579958A (en) * | 2020-05-20 | 2020-08-25 | 全球能源互联网研究院有限公司 | IGBT switching characteristic test circuit and test method |
| CN111579958B (en) * | 2020-05-20 | 2022-04-05 | 全球能源互联网研究院有限公司 | IGBT switching characteristic test circuit and test method |
| CN111952991A (en) * | 2020-08-11 | 2020-11-17 | 太原理工大学 | Master-slave driving device series-connection type direct current circuit breaker and control method thereof |
| CN111952991B (en) * | 2020-08-11 | 2023-03-21 | 太原理工大学 | Master-slave driving device series-connection type direct current circuit breaker and control method thereof |
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| CN107171292B (en) | 2019-06-07 |
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