CN107154784A - A kind of differential low noise amplifier based on medium integrated waveguide - Google Patents
A kind of differential low noise amplifier based on medium integrated waveguide Download PDFInfo
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- CN107154784A CN107154784A CN201710333408.4A CN201710333408A CN107154784A CN 107154784 A CN107154784 A CN 107154784A CN 201710333408 A CN201710333408 A CN 201710333408A CN 107154784 A CN107154784 A CN 107154784A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
The embodiments of the invention provide a kind of differential low noise amplifier based on medium integrated waveguide, including：First power divider, amplifying device and the second power divider；First power divider includes：First SIW, first input port, the second output port and the 3rd output port；Second output port is located at the first SIW upper strata metallic plate, and the 3rd output port is located at the first SIW lower metal plate；Second power divider includes：2nd SIW, the 4th input port, the 5th input port and the 6th output port；4th input port is located at the 2nd SIW upper strata metallic plate, and the 5th input port is located at the 2nd SIW lower metal plate；Second output port, the 3rd output port, the 4th input port and the 5th input port, are connected in series with amplifying device.Compared with differential low noise amplifier of the prior art, the volume for the differential low noise amplifier based on medium integrated waveguide that the embodiment of the present invention is proposed can be greatly reduced.
Description
Technical field
The present invention relates to amplifier technique field, more particularly to a kind of differential low noise based on medium integrated waveguide is put
Big device.
Background technology
Low-noise amplifier (Low Noise Amplifier, LNA) is now widely used for microwave communication, GPS receiver
In machine, remote sensing and control, radar, electronic countermeasure, radio astronomy, the earth mapping, TV and various high-precision microwave measurement systems,
It is essential Important Circuit.
In radio system, LNA is located at receiver foremost, and its major function is the letter that amplification is received from antenna
Number simultaneously ensure as small as possible to the SNR influence of late-class circuit again, to ensure whole system normal work.Due to LNA
In receiver foremost, it requires that LNA noise coefficient is the smaller the better.In order to reduce subsequent stages noise coefficient to system
Influence, also require that LNA has certain gain, but gain is again unsuitable excessive, in order to avoid overloading frequency mixer, produces non-linear lose
Very.Therefore, the basic demand to LNA is：Low, the enough power gain of noise coefficient, good operating stability, enough bandwidth and
Big dynamic range.
Common LNA is divided to for two kinds of circuit types of single-ended LNA and difference LNA.Have such as compared to single-ended LNA, difference LNA
Lower three advantages：
(1) difference LNA overcomes the influence that bias level is brought so that amplifier performance keeps stable.This is due to work as
The DC level for being added in two inputs of difference LNA changes, and the electric current of two terminal circuits still keeps constant, thus amplifier
Gain be also maintained for it is constant.
(2) principal element of difference LNA influences circuit bias state is the size of current of bias current sources, and single-ended LNA
The principal element of influence circuit bias state is the DC biased level of input pipe.And be difficult in integrated circuits accurately
Voltage is controlled, and due to various disturbances and noise, DC voltage can produce undesirable fluctuation.But electricity is controlled in integrated circuits
Stream source is but stablized relatively, is easily realized.Accordingly, with respect to single-ended LNA, difference LNA circuit bias state error is smaller.
(3) difference LNA structures improve the linearity of circuit.Due to the symmetry of output signal, non-linear point in circuit
Amount is offset, so as to improve the linearity.
But, because difference LNA will be amplified to the signal difference of two inputs, thus with single-ended LNA circuits phase
Than the single-ended LNA circuits volume of its volume ratio is twice.And in recent years, communication equipment and measuring instrument are towards the direction of miniaturization
Development, therefore, how on the premise of difference LNA meets its basic demand, reducing difference LNA volume turns into urgently to be resolved hurrily
Problem.
The content of the invention
The purpose of the embodiment of the present invention is to provide a kind of differential low noise amplifier based on medium integrated waveguide, to subtract
The volume of small differential low noise amplifier.Concrete technical scheme is as follows：
A kind of differential low noise amplifier based on medium integrated waveguide, including：First power divider, amplifying device with
And second power divider, first power divider and second power divider are based on medium integrated waveguide
SIW power divider；
First power divider includes：First SIW, first input port, the second output port and the 3rd output end
Mouthful；
The first input port and second output port are respectively positioned on the upper strata metallic plate of the first SIW, described
3rd output port is located at the lower metal plate of the first SIW；
Second power divider includes：2nd SIW, the 4th input port, the 5th input port and the 6th output end
Mouthful；
4th input port is located at the upper strata metallic plate of the 2nd SIW, the 5th input port and described the
Six output ports are respectively positioned on the lower metal plate of the 2nd SIW；
Second output port, the 3rd output port, the 4th input port and the 5th input
Mouthful, it is connected in series with the amplifying device.
Alternatively, the amplifying device includes：First amplification chip and the second amplification chip；
Second output port, first amplification chip and the 4th input port, are sequentially connected in series；
3rd output port, second amplification chip and the 5th input port, are sequentially connected in series.
Alternatively, it is provided with the first impedance matching structure between the first input port and the first SIW；
The second impedance matching structure is provided between second output port and the first SIW；
The 3rd impedance matching structure is provided between 3rd output port and the first SIW；
The 4th impedance matching structure is provided between 4th input port and the 2nd SIW；
The 5th impedance matching structure is provided between 5th input port and the 2nd SIW；
The 6th impedance matching structure is provided between 6th output port and the 2nd SIW.
Alternatively, first impedance matching structure and second impedance matching structure are to be arranged on the first SIW
Upper strata metallic plate on groove；
3rd impedance matching structure is the groove being arranged on the lower metal plate of the first SIW；
4th impedance matching structure is the groove being arranged on the upper strata metallic plate of the 2nd SIW；
5th impedance matching structure and the 6th impedance matching structure are the lower floor's gold for being arranged on the 2nd SIW
Belong to the groove on plate.
Alternatively, it is provided with the first grading structure on the first SIW；
The second grading structure is provided with 2nd SIW.
Alternatively, first grading structure is two row's metal apertures being arranged on the first SIW, and two row is golden
Spacing between category through hole is changed from small to big along signal transmission direction；
Second grading structure is two row's metal apertures being arranged on the 2nd SIW；And the two rows metal throuth hole
Between spacing along signal transmission direction from large to small.
Alternatively, the differential low noise amplifier also includes：First voltage feed circuit and second voltage feed circuit；
The first voltage feed circuit is connected with first amplification chip；
The second voltage feed circuit is connected with second amplification chip.
Alternatively, the source electrode of first amplification chip is provided with the first inductance；
The source electrode of second amplification chip is provided with the second inductance.
Alternatively, it is connected in series with the first isolation structure between second output port and first amplification chip；
The second isolation structure is connected in series between 3rd output port and second amplification chip；
The 3rd isolation structure is connected in series between 4th input port and first amplification chip；
The 4th isolation structure is connected in series between 5th input port and second amplification chip.
Alternatively, first isolation structure, second isolation structure, the 3rd isolation structure, the described 4th every
It is capacitance from structure.
A kind of differential low noise amplifier based on medium integrated waveguide provided in an embodiment of the present invention, including：First work(
Rate distributor, amplifying device and the second power divider, first power divider and second power divider are equal
For the power divider based on medium integrated waveguide SIW；And first power divider two output ports respectively in the first SIW
Upper strata metallic plate and the output of lower metal plate, and the signal amplitude of two output ports output is equal, opposite in phase.Second work(
Two input ports of rate distributor are inputted in the 2nd SIW upper strata metallic plate and lower metal plate respectively, and two inputs
The signal amplitude of mouth input is equal, opposite in phase.It is in in the prior art using output port and input port same
The power divider of plane is compared to design differential low noise amplifier, the embodiment of the present invention provided based on the integrated ripple of medium
The volume for the differential low noise amplifier led can be greatly reduced.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
A kind of upper strata for differential low noise amplifier based on medium integrated waveguide that Fig. 1 is provided by the embodiment of the present invention
Structural representation；
A kind of lower floor for differential low noise amplifier based on medium integrated waveguide that Fig. 2 is provided by the embodiment of the present invention
Structural representation；
A kind of three-dimensional for differential low noise amplifier based on medium integrated waveguide that Fig. 3 is provided by the embodiment of the present invention
Structural representation；
Signal in a kind of differential low noise amplifier based on medium integrated waveguide that Fig. 4 is provided by the embodiment of the present invention
Transmission direction schematic diagram；
A kind of stabilization for differential low noise amplifier based on medium integrated waveguide that Fig. 5 is provided by the embodiment of the present invention
Relation between coefficient and frequency；
A kind of noise for differential low noise amplifier based on medium integrated waveguide that Fig. 6 is provided by the embodiment of the present invention
Relation between coefficient and frequency；
A kind of S ginsengs for differential low noise amplifier based on medium integrated waveguide that Fig. 7 is provided by the embodiment of the present invention
Relation between number and frequency.
Wherein, corresponding relations of the Fig. 1 into Fig. 4 between each component Name and respective drawings mark is：
1 first input port, 2 second output ports, 3 the 3rd output ports, 4 the 4th input ports, 5 the 5th inputs
Mouthful, 6 the 6th output ports；
71 first power dividers, 72 second power dividers；
81 first impedance matching structures, 82 second impedance matching structures, 83 the 3rd impedance matching structures, 84 the 4th impedances
Distribution structure, 85 the 5th impedance matching structures, 86 the 6th impedance matching structures；
91 first grading structures, 92 second grading structures；
101 first amplification chips, 102 second amplification chips；
111 first inductance, 112 second inductance；
121 first isolation structures, 122 second isolation structures, 123 the 3rd isolation structures, 124 the 4th isolation structures；
14 inductance；
151 first voltage feed circuits, 152 second voltage feed circuits.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Referring to Fig. 1 to Fig. 3, a kind of differential low noise amplification based on medium integrated waveguide that the embodiment of the present invention is provided
Device includes：First power divider 71, amplifying device and the second power divider 72.
Wherein, the first power divider 71 and the second power divider 72 are based on medium integrated waveguide (Substrate
Integrated Waveguide, SIW) power divider；
First power divider 71 includes：First SIW, first input port 1, the second output port 2 and the 3rd output end
Mouth 3；And first input port 1 and second output port 2 are respectively positioned on the first SIW upper strata metallic plate, the 3rd output port 3
Positioned at the first SIW lower metal plate；
Second power divider 72 includes：2nd SIW, the 4th input port 4, the 5th input port 5 and the 6th output end
Mouth 6；And the 4th input port 4 be located at the 2nd SIW upper strata metallic plate, the 5th input port 5 and the 6th output port 6 are respectively positioned on
2nd SIW lower metal plate；
Second output port 2, the 3rd output port 3, the 4th input port 4 and the 5th input port 5, with amplification
Devices in series is connected.
Continuing with referring to Fig. 3, it is necessary to explanation, the output port 6 of first input port 1 and the 6th is the coplanar ripples of 50 Ω
Lead (coplanar waveguide, CPW) feed port, the corresponding ground of the output port 6 of first input port 1 and the 6th it
Between vertical range be sheet metal thickness that differential low noise amplifier (Low Noise Amplifier, LNA) is used.
Second output port 2 and the 3rd output port 3 are two output ports of the first power divider 71, are also all adopted
CPW structures are used, both impedance values realize conjugate impedance match with Minimum noises coefficients impedance, so as to ensure that the embodiment of the present invention is provided
Difference LNA circuit structure there is relatively low noise coefficient.Also, the intermediate layer for the dielectric-slab that difference LNA is used is suitable
In virtual earth, therefore, the signal amplitude of the second output port 2 and the output of the 3rd output port 3 is equal, and opposite in phase, i.e., second are defeated
There is 180deg phase difference between the output port 3 of exit port 2 and the 3rd, and then differential feed can be carried out to amplifying device.
It is appreciated that the distance between the second output port 2 and virtual earth are by half of the difference LNA using sheet metal thickness, the 3rd output
The distance between port 3 and virtual earth are by half of the difference LNA using sheet metal thickness.
For example, when calculating 50ohm CPW lines, the corresponding medium plate thickness of the second output port 2 is that difference LNA is adopted
The half of integral medium plate thickness, the corresponding medium plate thickness of the 3rd output port 3 is overall Jie that difference LNA is used
The half of scutum thickness.And the impedance value of first input port 1 is set as 50ohm, the second output port 2 and the 3rd output port
3 impedance value is designed as the conjugate impedance of Minimum noises coefficients impedance, so as to realize the purpose of low-noise factor.
4th input port 4 and the 5th input port 5 are two input ports of the second power divider 72, are also all adopted
CPW structures are used, the impedance value of both impedance values and amplifying device output port realizes conjugate impedance match, so as to ensure implementation of the present invention
The circuit structure for the difference LNA that example is provided reaches high-gain.Also, the intermediate layer for the dielectric-slab that difference LNA is used is suitable
In virtual earth, therefore, the signal amplitude of the 4th input port 4 and the input of the 5th input port 5 is equal, opposite in phase.It is appreciated that
The distance between 4th input port 4 and virtual earth are by half of the difference LNA using sheet metal thickness, the 5th input port 5 and void
The distance between ground is by half of the difference LNA using sheet metal thickness.
For example, when calculating 50ohm CPW lines, the corresponding medium plate thickness of the 4th input port 4 is that difference LNA is adopted
The half of integral medium plate thickness, the corresponding medium plate thickness of the 5th input port 5 is overall Jie that difference LNA is used
The half of scutum thickness.And the 6th the impedance value of output port 6 be set as 50ohm, the 4th input port 4 and the 5th input port
5 impedance value is designed as the conjugate impedance of chip output mouthful impedance, thereby may be ensured that the realization of high-gain performance.
Using the embodiment of the present invention, because two output ports of the first power divider 71 are respectively in the upper of the first SIW
Layer metallic plate and the output of lower metal plate, and the signal amplitude of two output port outputs is equal, opposite in phase.Second power point
Two input ports of orchestration 72 are inputted in the 2nd SIW upper strata metallic plate and lower metal plate respectively, and two input ports
The signal amplitude of output is equal, opposite in phase.With two output ports of the prior art and two I/Os mouthful
Compared in conplane differential low noise amplifier, the difference based on medium integrated waveguide that the embodiment of the present invention is provided
The volume of low-noise amplifier can be greatly reduced.Also, because SIW, CPW structure are damaged in high frequency (10GHz and more than) radiation
Consumption is relatively low, and therefore, the difference LNA that the embodiment of the present invention is provided can realize frequency applications.
Continuing with referring to Fig. 1 and Fig. 2, as a kind of alternative of the present embodiment, the amplifying device bag in the present embodiment
Include：First amplification chip 101 and the second amplification chip 102；And the second output port 2, the first amplification chip 101 and the 4th
Input port 4, is sequentially connected in series；3rd output port 3, the second amplification chip 102 and the 5th input port 5, go here and there successively
Connection connection.
More specifically, can be according to the selected design difference LNA of the design requirements such as gain, noise coefficient, bandwidth, signal to noise ratio
Required chip.For example, the first amplification chip 101 and the second amplification chip in the difference LNA that the embodiment of the present invention is provided
102 are：NE3509 chips.
Further, as the present embodiment it is another can embodiment, in order to avoid extra external power supply or battery,
The difference LNA that the embodiment of the present invention is provided can also include：First voltage feed circuit 151 and second voltage feed circuit
152.Also, first voltage feed circuit 151 is connected with the first amplification chip 101, for being powered to the first amplification chip 101；
Second voltage feed circuit 152 is connected with the second amplification chip 102, for being powered to the second amplification chip 102.
For example, first voltage feed circuit 151 and second voltage feed circuit 152 can be specifically direct current biasing
Circuit.Also, include two inductance 14 on each DC bias circuit.
Specifically, amplification core can be selected according to the simulation results of the tables of data of selected chip, and ADS softwares
The DC offset voltage of piece work, and DC bias circuit is designed according to DC offset voltage.
Specifically, Fig. 4, a kind of differential low noise based on medium integrated waveguide that the embodiment of the present invention is provided are referred to
Signal transmission direction can be as shown in Figure 4 in amplifier.
In order to ensure that the first amplification chip 101 and the second amplification chip 102 are operated in stable state, it can be put first
The source electrode of large chip 101 sets the first inductance 111, and the second inductance 112 is set in the source electrode of the second amplification chip 102.First electricity
The inductance 112 of sense 111 and second can be as negative-feedback, to ensure the first chip and the second chip operation in stable state.
Further, as another alternative of the present embodiment, set between the SIW of first input port 1 and the first
There is the first impedance matching structure 81, realize the impedance matching between the SIW of first input port 1 and the first, and swash in the first SIW
Excited suitable mode of operation, such as TE10Pattern；
The second impedance matching structure 82 is provided between second output port 2 and the first SIW, the second output port 2 is realized
With the impedance matching between the first SIW；
The 3rd impedance matching structure 83 is provided between 3rd output port 3 and the first SIW, the 3rd output port 3 is realized
With the impedance matching between the first SIW；
The 4th impedance matching structure 84 is provided between 4th input port 4 and the 2nd SIW, the 4th input port 4 is realized
With the impedance matching between the 2nd SIW, and suitable mode of operation, such as TE are played in the 2nd SIW underexcitations10Pattern；
The 5th impedance matching structure 85 is provided between 5th input port 5 and the 2nd SIW, the 5th input port 5 is realized
With the impedance matching between the 2nd SIW, and suitable mode of operation, such as TE are played in the 2nd SIW underexcitations10Pattern.
The 6th impedance matching structure 86 is provided between 6th output port 6 and the 2nd SIW, the 6th output port 6 is realized
With the impedance matching between the 2nd SIW.
Specifically, the first impedance matching structure 81 and the second impedance matching structure 82 are the upper strata gold for being arranged on the first SIW
Belong to the groove on plate；3rd impedance matching structure 83 is the groove being arranged on the first SIW lower metal plate；4th impedance matching knot
Structure 84 is the groove being arranged on the 2nd SIW upper strata metallic plate；5th impedance matching structure 85 and the 6th impedance matching structure 86
For the groove being arranged on the lower metal plate of the 2nd SIW.
Preferably, the first impedance matching structure 81 and the second impedance matching structure 82 are the upper strata gold for being arranged on the first SIW
Belong to the gradual change skewed slot on plate；3rd impedance matching structure 83 is the gradual change skewed slot being arranged on the first SIW lower metal plate；The
Four impedance matching structures 84 are the gradual change skewed slot being arranged on the 2nd SIW upper strata metallic plate；The He of 5th impedance matching structure 85
6th impedance matching structure 86 is the gradual change skewed slot being arranged on the lower metal plate of the 2nd SIW.It is appreciated that can root
The angle formed according to the depth of gradual change skewed slot and the side of gradual change skewed slot with horizontal plane, to be adjusted to each impedance matching structure
It is whole, adjust impedance matching value.
Further, the first grading structure can also be set on the first SIW in the difference LNA that the present embodiment is provided
91；Second grading structure 92 can also be set on the 2nd SIW.
Pass through each impedance matching structure and the first grading structure 91 and the second grading structure 92, it is possible to achieve the first work(
The adjustable function of the output port impedance of rate distributor 71, and then two output ports of the first power divider 71 can be realized
With Minimum noises coefficients impedance conjugate impedance match, so as to realize the performance requirement of low-noise factor.And realize the second power distribution
Two input ports of device 72 and the output port impedance conjugate impedance match of amplification chip, so as to realize the performance requirement of high-gain.
Also, need not redesign between the output port of the first power splitter and amplification chip port and the second power splitter it is defeated
Impedance matching circuit between inbound port and amplification chip port, can simplify design, can further reduce difference LNA circuits
Volume.
Specifically, the first grading structure 91 is two row's metal apertures being arranged on the first SIW, and the second grading structure 92 is to set
Put two row's metal apertures on the 2nd SIW.Also, the spacing between two row's metal throuth holes on the first SIW is transmitted along signal
Change from small to big in direction；The spacing between two row's metal throuth holes on 2nd SIW along signal transmission direction from large to small.
Specifically, on SIW the spacing W between two row's metal apertures (two row's metal throuth hole centers of circle)SIWFollowing public affairs can be passed through
Formula is determined：
Wequ=WSIW·δ
Wherein,
SvpRepresent in often row's metal aperture
Spacing between any two metal aperture center of circle, WequTo normalize equivalent medium rectangular waveguide width.
It should be noted that SIW can only propagate TEn0Pattern, and its main mould is similar with traditional rectangular waveguide, is also
TE10Pattern.That is SIW ensures only have main mould to propagate, and curbs the propagation of other higher modes.In order to ensure SIW selected
Lower of working frequency transmission main mould, metal throuth hole interval Svp, metal throuth hole diameter D, SIW main mould TE10Cutoff wavelength λC
Between should meet following empirical equation：
Further, can embodiment, the second output port 2 and the first amplification chip as another of the present embodiment
The first isolation structure 121 is connected in series between 101；
The second isolation structure 122 is connected in series between 3rd output port 3 and the second amplification chip 102；
The 3rd isolation structure 123 is connected in series between 4th input port 4 and the first amplification chip 101；
The 4th isolation structure 124 is connected in series between 5th input port 5 and the second amplification chip 102.
By the first isolation structure 121 and the second isolation structure 122, the output signal of the first power divider 71 can be obstructed
In flip-flop, only alternating component is transmitted.By the 3rd isolation structure 123 and the 4th isolation structure 124, it can hinder
Alternating component, is only transmitted by the flip-flop in amplifying device output signal.
Specifically, the first isolation structure 121, the second isolation structure 122, the 3rd isolation structure 123, the 4th isolation structure
124 can be capacitance.
Fig. 5 to Fig. 7 is referred to, Fig. 5 to Fig. 7 is respectively a kind of base provided using ADS softwares the embodiment of the present invention
After the differential low noise amplifier of medium integrated waveguide is emulated, the coefficient of stability, noise coefficient, S parameter and the frequency of acquisition
Relation between rate.
In Figure 5, abscissa represents frequency, and ordinate represents the coefficient of stability.As shown in Figure 5, in working frequency range
In (4.4GHz-5.7GHz), a kind of differential low noise amplifier based on medium integrated waveguide that the embodiment of the present invention is provided
The coefficient of stability fluctuation it is smaller, and be all higher than 1, i.e. low-noise amplifier in working frequency range be in absolute stability state.
In figure 6, abscissa represents frequency, and ordinate represents noise coefficient.It will be appreciated from fig. 6 that in working frequency range
In (4.4GHz-5.7GHz), a kind of differential low noise amplifier based on medium integrated waveguide that the embodiment of the present invention is provided
Noise coefficient be less than 0.6dB, noise coefficient is relatively low.
In the figure 7, abscissa represents frequency, and ordinate represents S parameter, and S (1,1) damages for the echo of the second output port 2
Consumption, is worth the smaller the better；S (2,2) is the return loss of the 3rd output port 3, is worth the smaller the better；S (2,1) is LNA actual increasing
Benefit, value is the bigger the better.As shown in Figure 7, the return loss of the second output port 2 and the 3rd output port 3 is less than -10dB, compares
It is small；LNA actual gain is more than 8dB, than larger.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality
Body or operation make a distinction with another entity or operation, and not necessarily require or imply these entities or deposited between operating
In any this actual relation or order.Moreover, term " comprising ", "comprising" or its any other variant are intended to
Nonexcludability is included, so that process, method, article or equipment including a series of key elements not only will including those
Element, but also other key elements including being not expressly set out, or also include being this process, method, article or equipment
Intrinsic key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that
Also there is other identical element in process, method, article or equipment including the key element.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the scope of the present invention.It is all
Any modification, equivalent substitution and improvements made within the spirit and principles in the present invention etc., are all contained in protection scope of the present invention
It is interior.
Claims (10)
1. a kind of differential low noise amplifier based on medium integrated waveguide, it is characterised in that including：First power divider,
Amplifying device and the second power divider, first power divider and second power divider are based on medium
Integrated waveguide SIW power divider；
First power divider includes：First SIW, first input port, the second output port and the 3rd output port；
The first input port and second output port are respectively positioned on the upper strata metallic plate of the first SIW, the described 3rd
Output port is located at the lower metal plate of the first SIW；
Second power divider includes：2nd SIW, the 4th input port, the 5th input port and the 6th output port；
4th input port is located at the upper strata metallic plate of the 2nd SIW, the 5th input port and described 6th defeated
Exit port is respectively positioned on the lower metal plate of the 2nd SIW；
Second output port, the 3rd output port, the 4th input port and the 5th input port,
It is connected in series with the amplifying device.
2. the differential low noise amplifier according to claim 1 based on medium integrated waveguide, it is characterised in that described to put
Big device includes：First amplification chip and the second amplification chip；
Second output port, first amplification chip and the 4th input port, are sequentially connected in series；
3rd output port, second amplification chip and the 5th input port, are sequentially connected in series.
3. the differential low noise amplifier according to claim 2 based on medium integrated waveguide, it is characterised in that described
The first impedance matching structure is provided between one input port and the first SIW；
The second impedance matching structure is provided between second output port and the first SIW；
The 3rd impedance matching structure is provided between 3rd output port and the first SIW；
The 4th impedance matching structure is provided between 4th input port and the 2nd SIW；
The 5th impedance matching structure is provided between 5th input port and the 2nd SIW；
The 6th impedance matching structure is provided between 6th output port and the 2nd SIW.
4. the differential low noise amplifier according to claim 3 based on medium integrated waveguide, it is characterised in that described
One impedance matching structure and second impedance matching structure are the groove being arranged on the upper strata metallic plate of the first SIW；
3rd impedance matching structure is the groove being arranged on the lower metal plate of the first SIW；
4th impedance matching structure is the groove being arranged on the upper strata metallic plate of the 2nd SIW；
5th impedance matching structure and the 6th impedance matching structure are the lower metal plate for being arranged on the 2nd SIW
On groove.
5. the differential low noise amplifier based on medium integrated waveguide according to claim any one of 2-4, its feature exists
In being provided with the first grading structure on the first SIW；
The second grading structure is provided with 2nd SIW.
6. the differential low noise amplifier according to claim 5 based on medium integrated waveguide, it is characterised in that described
One grading structure be spacing between two row's metal apertures being arranged on the first SIW, and the two rows metal throuth hole along
Signal transmission direction is changed from small to big；
Second grading structure is two row's metal apertures being arranged on the 2nd SIW；And between the two rows metal throuth hole
Spacing along signal transmission direction from large to small.
7. the differential low noise amplifier according to claim 5 based on medium integrated waveguide, it is characterised in that the difference
Low-noise amplifier is divided also to include：First voltage feed circuit and second voltage feed circuit；
The first voltage feed circuit is connected with first amplification chip；
The second voltage feed circuit is connected with second amplification chip.
8. the differential low noise amplifier according to claim 7 based on medium integrated waveguide, it is characterised in that described
The source electrode of one amplification chip is provided with the first inductance；
The source electrode of second amplification chip is provided with the second inductance.
9. the differential low noise amplifier according to claim 8 based on medium integrated waveguide, it is characterised in that described
The first isolation structure is connected in series between two output ports and first amplification chip；
The second isolation structure is connected in series between 3rd output port and second amplification chip；
The 3rd isolation structure is connected in series between 4th input port and first amplification chip；
The 4th isolation structure is connected in series between 5th input port and second amplification chip.
10. the differential low noise amplifier according to claim 9 based on medium integrated waveguide, it is characterised in that described
First isolation structure, second isolation structure, the 3rd isolation structure, the 4th isolation structure are capacitance.
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| CN201710333408.4A CN107154784B (en) | 2017-05-12 | 2017-05-12 | A kind of differential low noise amplifier based on medium integrated waveguide |
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Citations (3)
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|---|---|---|---|---|
| CN101515790A (en) * | 2009-04-03 | 2009-08-26 | 东南大学 | Millimeter wave band power amplifier based on flexible chip integrated wave guide technology |
| CN101662061A (en) * | 2009-09-25 | 2010-03-03 | 华南理工大学 | Plane space power distribution/synthesis magnifier |
| CN104091991A (en) * | 2014-07-16 | 2014-10-08 | 东南大学 | Multiple-substrate integrated waveguide power divider |
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2017
- 2017-05-12 CN CN201710333408.4A patent/CN107154784B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101515790A (en) * | 2009-04-03 | 2009-08-26 | 东南大学 | Millimeter wave band power amplifier based on flexible chip integrated wave guide technology |
| CN101662061A (en) * | 2009-09-25 | 2010-03-03 | 华南理工大学 | Plane space power distribution/synthesis magnifier |
| CN104091991A (en) * | 2014-07-16 | 2014-10-08 | 东南大学 | Multiple-substrate integrated waveguide power divider |
Non-Patent Citations (2)
| Title |
|---|
| FARZANEH TARINGOU ET AL.: "Broadband coplanar-waveguide and microstrip low-noise amplifier hybrid integrations for K-band substrate integrated waveguide applications on low-permittivity substrate", 《IET MICROWAVES, ANTENNAS & PROPAGATION》 * |
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| CN107154784B (en) | 2019-10-15 |
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