CN101662061A - Plane space power distribution/synthesis magnifier - Google Patents
Plane space power distribution/synthesis magnifier Download PDFInfo
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- CN101662061A CN101662061A CN200910192709A CN200910192709A CN101662061A CN 101662061 A CN101662061 A CN 101662061A CN 200910192709 A CN200910192709 A CN 200910192709A CN 200910192709 A CN200910192709 A CN 200910192709A CN 101662061 A CN101662061 A CN 101662061A
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Abstract
The invention relates to a plane space power distribution/synthesis magnifier which comprises a substrate and at least one group of power distribution/synthesis devices, wherein the power distribution/synthesis devices are arranged on the plane of the substrate, a plurality of levels of steps are arranged on the output ends of microstrip power distributors of the power distribution/synthesis devices, one output terminal is introduced on each level of steps and is connected with the microstrip line of the magnifier by an arc-shaped microstrip line of 90 degrees, a plurality of levels of steps are arranged on the input end of a microstrip power synthesis device, and one input terminal is introduced on each level of steps and is connected with the microstrip line of the magnifier by the arc-shaped microstrip line of 90 degrees. The invention has simple structure and easy processing and is beneficial for integrating with other components and parts in a circuit. The magnifier is placed at the side edge of a main signal channel by introducing the arc-shaped microstrip line of 90 degrees, a chain type structure is formed, a distance between signal channels can be adjusted according to actual conditions, and a sufficient space is provided for placing a magnifier chip and other bias elements.
Description
Technical field
The present invention relates to microwave, millimeter wave power amplifier, be specifically related to plane space power distribution/synthesis magnifier.
Background technology
At present, in microwave, millimeter wave power amplifier, be that the amplifier that the basis makes can obtain sufficiently high power output with the electron tube, but cost an arm and a leg, bulky, its application that needed drawbacks limit such as High Voltage Power Supply.And be the solid-state power amplifier low price that the basis makes with the semiconductor device, the reliability height, volume is little, and is in light weight, need not High Voltage Power Supply; But its power handling capability is limited, and the power that can export at millimeter wave band generally can not surpass 10 watts, and power output was lower when frequency was higher.By power division/combiner circuit that the power output of a plurality of solid state device is synthetic, just can improve the power output of solid-state power amplifier, satisfy in the system requirement to transmit power level.
Power division/combiner circuit can be divided into the complex form of binary system formula power division/combiner circuit (see figure 1), spatial power distribution/combiner circuit (see figure 2) and above two kinds of forms.Form shown in Figure 1 is that power splitter with one-to-two is as the basis, so be called the binary system formula; Triangle among Fig. 1 is represented amplifying unit, is divided into multichannel after the power input, and amplify respectively on every road, and is synthetic in comprise network then, and synthetic is the inverse process that distributes.Form shown in Figure 2 is generally finished the distribution of power/synthetic with the field distribution of particular space, so be called spatial power and distribute/synthetic.
Binary system formula power division/combiner circuit simplicity of design is easy to realize with the form of planar circuit.But when synthetic amplifying unit increased, the volume of power division/comprise network can be along with increase, and the loss on the network also increases thereupon, and the combined coefficient of entire circuit is reduced.In addition, owing to will use quarter-wave impedance matching box, its bandwidth also is restricted.Therefore, when needs synthesize a plurality of amplifying unit, generally do not adopt the power division/combiner circuit of this form.
Spatial power distributes/and synthetic form utilizes the field distribution of particular space to finish the distribution of power/synthetic, its loss can not increase thereupon when amplifying unit quantity increases, guaranteed that combined coefficient more can not reduce at amplifying unit, so the power division/combiner circuit of this form has obtained very big development, become the main flow direction of present research.For example, disclosed Chinese invention patent application CN1377099A introduced a kind of solid-state power synthesizer in waveguide on October 30th, 2002, its power division/building-up process is to be finished by the TE10 mode wave in the rectangular waveguide: energy is imported from the waveguide mouth, by side by side gradual change fin line array in the waveguide energy is coupled in the fin line, the fin line array is equivalent to reception antenna, the end of fin line is received micro belt impedance converter with wire jumper, realizes the coupling of fin line terminating impedance and amplifier input impedance; Signal enters amplifying unit and carries out signal and amplify then, after the amplification, and building-up process and assigning process symmetry; Link to each other with the fin line array with wire jumper, by the fin line array energy is coupled into the TE10 pattern output of rectangular waveguide then.But this spatial power distributes/synthetic form relates to and counts three-dimensional structure, to having relatively high expectations of electrical property design and mechanical structure aspect, and also difficult and other circuit elements are integrated self-contained; So, be an importance in power synthetic technique field to the complanation research of this form always.
At " Integrated planar spatial power combiner " (referring to L.Li and K.Wu at IEEE Trans.Microw.Theory Tech.Vol.54, No.4, pp.1470-1476, April 2006) in the literary composition, plane space power division/composite structure has as shown in Figure 3 been proposed.After the signal input, through the impedance variation device of a gradual change, match super wide microstrip line, be divided into four the tunnel then, every road connects amplifying unit (not marking among the figure), amplifies after the synthetic output of the inverse process of power division.This circuit design is simple, and is easy to process, easily and other circuit elements integrated, very wide bandwidth is arranged.But when this circuit increased in amplifying unit quantity, the live width of super wide microstrip line can increase thereupon, excites the higher modes wave propagation easily; And when amplifying unit quantity increased, the characteristic impedance meeting of super wide microstrip line reduced thereupon, and the difference that this has increased characteristic impedance between input microstrip line and the super wide microstrip line is unfavorable for the coupling between them.In addition, the distance between each signalling channel is too little, does not have enough spaces to place amplifier chip and biasing element thereof.
Summary of the invention
The objective of the invention is in order to overcome the above-mentioned shortcomings and deficiencies of existing in prior technology, a kind of plane space power distribution/synthesis magnifier is provided, it is by introducing the arc microstrip line of 90 degree, amplifier is placed on the side of main signal channel, form chain structure, make the distance between each signalling channel to adjust, have enough spaces to place amplifier chip and other biasing elements according to actual conditions.It can adopt individual layer or double-deck substrate to realize, the structure that adopts double-deck substrate to realize can double power division/synthetic way under the situation that increases the circuit volume hardly, thereby can integrated more amplifier unit, obtain bigger power output.
Purpose of the present invention is achieved through the following technical solutions: plane space power distribution/synthesis magnifier, comprise substrate, and be arranged on the described substrate plane, comprise that successively the edge up power division/synthesizer of impedance transformer of impedance transformer, microstrip power divider, some amplifiers, little band power combiner and little band gradually falls in the little band that connects; Described power division/synthesizer is provided with at least one group; The input of described microstrip power divider gradually falls impedance transformer with little band and is connected, output is provided with some grades of ladders, draw a lead-out terminal on every grade of ladder, the microstrip line at some amplifiers place connects at an angle with some lead-out terminals are corresponding one by one; The output of described little band power combiner and the little band impedance transformer that edges up is connected, input is provided with some grades of ladders, draw an input terminal on every grade of ladder, the microstrip line at some amplifiers place connects at an angle with some input terminals are corresponding one by one.
Described power division/synthesizer is provided with two groups, is separately positioned on two opposite planar of described substrate; The input of two groups of power division/synthesizers, output connect by the input parallel wire on two opposite planar that are located at described substrate, output parallel wire respectively.
Described input parallel wire is wide, and the output parallel wire is wide.
Be provided with metal ground plane in the middle of two opposite planar of described substrate.
The microstrip line at described some amplifiers place connects with corresponding one by one 90 degree that are of some lead-out terminals; The microstrip line at some amplifiers place connects with corresponding one by one 90 degree that are of some input terminals.
The microstrip line at described some amplifiers place and some lead-out terminals connect one to one by 90 degree arc microstrip lines; The microstrip line at some amplifiers place and some input terminals connect one to one by 90 degree arc microstrip lines.
The present invention has following advantage and effect with respect to prior art:
1, structure of the present invention has kept the characteristics of planar circuit, and is simple in structure, is easy to processing, help with circuit in other components and parts integrated.
2, introduce the arc microstrip line of 90 degree, amplifier can be placed on the side of main signal channel, form chain structure, thereby can realize that multichannel is synthetic, and can have enough spaces to place amplifier chip and other biasing elements between each signalling channel.
3, by introducing the transition of parallel wire to two microstrip line, the plane chain type power synthesis amplifier of two single layer structures is integrated, form double-decker, make under the situation that increases volume hardly, synthetic amplifier way has increased by one times, thereby can access bigger power output.
4, the present invention is simple in structure, be easy to realize, the firm and hard existing structure of the employing single-layer medium that adopts the firm and hard existing structure of two-layered medium to compare can be on circuit area about equally the amplifier block of integrated more more number, thereby obtain bigger power output.
Description of drawings
Fig. 1 is the schematic diagram of existing binary system formula power division/composite structure;
Fig. 2 is the schematic diagram of existing space power division/composite structure;
Fig. 3 is the schematic diagram of existing plane space power division/composite structure;
Fig. 4 a is the vertical view of the plane space power distribution/synthesis magnifier of realizing with single substrate that proposes of the present invention;
Fig. 4 b is the end view of the plane space power distribution/synthesis magnifier of realizing with single substrate that proposes of the present invention;
Fig. 5 a is the vertical view of the plane space power distribution/synthesis magnifier realized of the double-deck substrate of the usefulness that proposes of the present invention;
Fig. 5 b is the end view of the plane space power distribution/synthesis magnifier realized of the double-deck substrate of the usefulness that proposes of the present invention;
The field distribution schematic diagram that Fig. 6 is a parallel wire in the microstrip line transition;
Fig. 7 is an one-level merit separation structure schematic diagram.
Embodiment
The present invention is described in further detail below in conjunction with embodiment and accompanying drawing, but embodiments of the present invention are not limited thereto.
Embodiment 1
Present embodiment is the plane space power distribution/synthesis magnifier that adopts single substrate to realize, shown in Fig. 4 a, Fig. 4 b, it comprises substrate 611, and is arranged on one group of power division/synthesizer on substrate 611 planes; Wherein, power division/synthesizer comprises that successively impedance transformer 603, microstrip power divider, 4 amplifiers 610, little band power combiner and the little bands impedance transformer 612 that edges up gradually falls in the little band that connects, and microstrip power divider, 4 amplifiers 610, little band power combiners constitute chain type power division/amplification/comprise network 605 jointly.The input of microstrip power divider gradually falls impedance transformer 603 with little band and is connected, output is provided with 4 grades of ladders: first ladder 604, second ladder 606, the 3rd ladder 607 and four-step 608, draw a lead-out terminal on every grade of ladder, the microstrip line at 4 amplifier places and 4 lead-out terminals connect one to one by 90 degree arc microstrip lines 609.The output of described little band power combiner and the little band impedance transformer 612 that edges up is connected, be provided with 4 grades of ladders accordingly with the microstrip power divider output on the input, draw an input terminal on every grade of ladder, the microstrip line at 4 amplifier places and 4 input terminals connect one to one by 90 degree arc microstrip lines.In the present embodiment, the plane space power distribution/synthesis magnifier shown in Fig. 4 a is centrosymmetric; Microstrip power divider and little band power combiner all adopt super wide microstrip line (Oversized microstrip line) to realize.
Can see from Fig. 4 a, Fig. 4 b, distribution/the building-up process of present embodiment is: when signal is imported from port 601, arrive the input that impedance transformer 603 gradually falls in little band through microstrip line 602, gradually fall the impedance matching that impedance transformer 603 is realized between microstrip line 602 and the super wide microstrip line.In the art, the characteristic impedance of microstrip line generally is 50 ohm; And the live width of super wide microstrip line big than microstrip line, thereby characteristic impedance is less than 50 ohm.Then, signal is divided into four the tunnel at the output of microstrip power divider, and each road signal amplifies through amplifier 610 respectively, passes through and the process of contrary just now the synthetic output of signal then.
The present invention is connected between the input of the output of microstrip power divider and little band power combiner by 90 degree arc microstrip lines, 609 microstrip lines with the amplifier place, thereby amplifier 610 can be placed on the side of main signal channel, thereby make the distance between each signalling channel to select easily, can have enough spaces to place amplifier chip and other biasing elements according to actual conditions.
Embodiment 2
Present embodiment is the plane space power distribution/synthesis magnifier that adopts double-deck substrate to realize, shown in Fig. 5 a, Fig. 5 b, it comprises substrate 714, and is separately positioned on two groups of power division/synthesizers on 714 two opposite planar of substrate.Identical among the structure of every group of power division/synthesizer and the embodiment 1, also be to comprise that successively impedance transformer 703, microstrip power divider, 4 amplifiers 710, little band power combiner and the little bands impedance transformer 715 that edges up gradually falls in the little band that connects, 4 grades of set ladders are respectively first ladder 704, second ladder 706, the 3rd ladder 707 and four-step 708 on the microstrip power divider output.Microstrip power divider, 4 amplifiers 710, little band power combiners constitute chain type power division/amplification/comprise network 705 jointly.By 90 degree arc microstrip lines 709, the microstrip line at 4 amplifier places is connected between 4 inputs of 4 outputs of microstrip power divider and little band power combiner.Present embodiment also is to realize microstrip power divider, little band power combiner with super wide microstrip line.
Distribution/the building-up process of present embodiment is: signal is 711 inputs from the input port, along 712 transmission of wide input parallel wire, are divided into the two-way microstrip line when arriving embedded metal ground plane 713, finish the first time of power and distribute.Then, each road gradually falls impedance matching box 703 by little band and matches microstrip power divider.At the output of microstrip power divider, power is divided into four the tunnel, thereby distributes the second time of finishing power.Because the power division process is carried out simultaneously two apparent surfaces of substrate for the second time, so this moment, whole input power has been divided into eight the tunnel.Then, each road signal is sent into amplifier 710 and is carried out power amplification, amplifies the building-up process and the assigning process contrary of back power.
Obviously, the difference of Fig. 5 a and Fig. 4 a is: by adding the transition from input parallel wire 712 to microstrip line 702, two single substrate can be integrated, thereby when increasing the entire circuit volume hardly, make integrated amplifier number increase by one times, obtain bigger power output.
Have it may be noted that at 3: have the power output of 4 amplifiers to be synthesized among (1) Fig. 4 a, but this structure to be not limited to comprise the structure of 4 amplifiers.Have the power output of 8 amplifiers to be synthesized among Fig. 5 a, same, this structure is not limited to comprise the structure of 8 amplifiers.(2) do not draw among Fig. 4 a, Fig. 5 a biasing element of amplifier.(3) purpose of the arc microstrip lines of introducing 90 degree is to make amplifier can be placed on the side of main signal channel, and other forms of microstrip lines with 90 degree corner features also can reach same purpose.
Present embodiment needs to determine in actual applications:
1) width of input parallel wire 712; The width of microstrip line 702;
2) width of super wide microstrip line, second ladder 706, the 3rd ladder 707 and four-step 708; The length of second ladder 706, the 3rd ladder 707;
3) the line width variation situation of impedance transformer 703 is gradually fallen.
Be illustrated one by one below:
(1) under the known condition of substrate thickness and medium dielectric constant, be the width of 50 ohm input parallel wire 712 according to traditional plane two-wire formula design characteristics impedance.
(2) be converted in the process of two microstrip lines 702 by input parallel wire 712, electric field structure does not change, and field structure is seen Fig. 6, and the 812nd, input parallel wire, corresponding 712; The 802nd, microstrip line, corresponding 702; The 813rd, be embedded in the middle metal ground plane of dielectric-slab, corresponding 713.In order to keep coupling, the characteristic impedance of input parallel wire 812 equals the twice of the characteristic impedance of microstrip line 802, and like this, the characteristic impedance of microstrip line 802 is 25 ohm, can calculate its width with ready-made formula.
(3) in order to be connected with the amplifier chip coupling, the characteristic impedance of four-step 708 is 50 ohm, can calculate its width with ready-made formula.
(4) chain link formula merit separation structure behind the super wide microstrip line can equivalence be the microstrip line that super wide microstrip line end connects four parallel connections, so the characteristic impedance of super wide little band is 12.5 ohm, can obtain its width with ready-made formula.But it will have enough length that the terminal discontinuous higher modes wave attenuation that evokes of transition line is fallen, and does not have influence on the amplitude and the phase equalization of parallel each branch road of microstrip line in back.
(5) for determining the width of second ladder 706, the 3rd ladder 707 in the chain type power divider, can in general field simulation software, set up model as shown in Figure 7, port one (Port 1) is the input port, port 2 (Port 2) and port 3 (Port 3) are delivery outlets, the power output of port 2 should be (N-i) with the power output ratio of port 3: 1, and wherein N is a total way, i is an i bar branch road, beginning counting from the top of chain type merit separation structure, is respectively 1,2,3,4 grade.Realize above-mentioned power division ratio by the micro belt line width of regulating port 2, the width of port one microstrip line divides the process decision by higher level's merit.Arrow is represented the position of the plane of reference among Fig. 7, during emulation each port with the characteristic impedance of corresponding microstrip line separately as terminal impedance.What mainly consider when determining length is to want to have enough spaces to place amplifier chip and biasing element.
(6) impedance matching box 604 that edges up can be followed different gradual change impedance variation rules with 704 design and designs.Can be exponential type, linear, Chebyshev's type or the like.For the same impedance for matching ratio that needs, in the time will obtaining identical reflection coefficient, the length that the transition line impedance conversion of Chebyshev's type obtains is the shortest.
The execution mode of single layer structure and double-deck similar is not just imported parallel wire 712, output parallel wire 716 in the single layer structure, the characteristic impedance of single layer structure microstrip line 502 is 50 ohm.And the characteristic impedance of double-decker microstrip line 702 is 25 ohm.
The foregoing description is a preferred implementation of the present invention; but embodiments of the present invention are not restricted to the described embodiments; other any do not deviate from change, the modification done under spirit of the present invention and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (7)
1. plane space power distribution/synthesis magnifier, comprise substrate, and be arranged on the described substrate plane, comprise that successively the edge up power division/synthesizer of impedance transformer of impedance transformer, microstrip power divider, some amplifiers, little band power combiner and little band gradually falls in the little band that connects; It is characterized in that: described power division/synthesizer is provided with at least one group; The input of described microstrip power divider gradually falls impedance transformer with little band and is connected, output is provided with some grades of ladders, draw a lead-out terminal on every grade of ladder, the microstrip line at some amplifiers place connects at an angle with some lead-out terminals are corresponding one by one; The output of described little band power combiner and the little band impedance transformer that edges up is connected, input is provided with some grades of ladders, draw an input terminal on every grade of ladder, the microstrip line at some amplifiers place connects at an angle with some input terminals are corresponding one by one.
2. plane space power distribution/synthesis magnifier according to claim 1 is characterized in that: described power division/synthesizer is provided with two groups, is separately positioned on two opposite planar of described substrate; The input of two groups of power division/synthesizers, output connect by the input parallel wire on two opposite planar that are located at described substrate, output parallel wire respectively.
3. plane space power distribution/synthesis magnifier according to claim 2 is characterized in that: described input parallel wire is wide, and the output parallel wire is wide.
4. plane space power distribution/synthesis magnifier according to claim 2 is characterized in that: be provided with metal ground plane in the middle of two opposite planar of described substrate.
5. plane space power distribution/synthesis magnifier according to claim 1 and 2 is characterized in that: the microstrip line at described some amplifiers place connects with corresponding one by one 90 degree that are of some lead-out terminals; The microstrip line at some amplifiers place connects with corresponding one by one 90 degree that are of some input terminals.
6. plane space power distribution/synthesis magnifier according to claim 5 is characterized in that: the microstrip line at described some amplifiers place and some lead-out terminals connect one to one by 90 degree arc microstrip lines; The microstrip line at some amplifiers place and some input terminals connect one to one by 90 degree arc microstrip lines.
7. plane space power distribution/synthesis magnifier according to claim 1 and 2 is characterized in that: every group of power division/synthesizer is provided with 4 amplifiers.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102315825A (en) * | 2010-07-06 | 2012-01-11 | 杨健 | High-linearity push-pull amplifier using space combination technology |
| CN102709661A (en) * | 2012-05-30 | 2012-10-03 | 东南大学 | Microwave and millimeter-wave modular power divider/combiner |
| CN103647130A (en) * | 2013-12-27 | 2014-03-19 | 成都芯通科技股份有限公司 | Six-path radio frequency high-power combiner |
| CN103647131A (en) * | 2013-12-11 | 2014-03-19 | 华为技术有限公司 | Method for improving microwave circuit coupling degree fluctuation and microwave circuit |
| CN107154784A (en) * | 2017-05-12 | 2017-09-12 | 北京邮电大学 | A kind of differential low noise amplifier based on medium integrated waveguide |
| CN108012403A (en) * | 2017-11-28 | 2018-05-08 | 无锡市同步电子科技有限公司 | A kind of cabling optimization method at microstrip line cabling turning |
| CN109167580A (en) * | 2018-10-30 | 2019-01-08 | 北京振兴计量测试研究所 | A kind of four road power synthesis amplifier of plane |
| CN112953425A (en) * | 2021-04-02 | 2021-06-11 | 重庆邮电大学 | Balanced type broadband high-power amplifier based on band-pass filter |
| CN113098413A (en) * | 2021-03-31 | 2021-07-09 | 绵阳天赫微波科技有限公司 | Power amplifier for 6-18GHz frequency band radio frequency signals and power amplification method thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102315825A (en) * | 2010-07-06 | 2012-01-11 | 杨健 | High-linearity push-pull amplifier using space combination technology |
| CN102709661A (en) * | 2012-05-30 | 2012-10-03 | 东南大学 | Microwave and millimeter-wave modular power divider/combiner |
| CN103647131A (en) * | 2013-12-11 | 2014-03-19 | 华为技术有限公司 | Method for improving microwave circuit coupling degree fluctuation and microwave circuit |
| CN103647131B (en) * | 2013-12-11 | 2016-05-25 | 华为技术有限公司 | A kind of method and microwave circuit that improves the fluctuation of the microwave circuit degree of coupling |
| CN103647130A (en) * | 2013-12-27 | 2014-03-19 | 成都芯通科技股份有限公司 | Six-path radio frequency high-power combiner |
| CN107154784A (en) * | 2017-05-12 | 2017-09-12 | 北京邮电大学 | A kind of differential low noise amplifier based on medium integrated waveguide |
| CN108012403A (en) * | 2017-11-28 | 2018-05-08 | 无锡市同步电子科技有限公司 | A kind of cabling optimization method at microstrip line cabling turning |
| CN109167580A (en) * | 2018-10-30 | 2019-01-08 | 北京振兴计量测试研究所 | A kind of four road power synthesis amplifier of plane |
| CN113098413A (en) * | 2021-03-31 | 2021-07-09 | 绵阳天赫微波科技有限公司 | Power amplifier for 6-18GHz frequency band radio frequency signals and power amplification method thereof |
| CN112953425A (en) * | 2021-04-02 | 2021-06-11 | 重庆邮电大学 | Balanced type broadband high-power amplifier based on band-pass filter |
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