CN107153722A - The system and method that the parameter of matching network model is determined using equipment and efficiency - Google Patents

The system and method that the parameter of matching network model is determined using equipment and efficiency Download PDF

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Publication number
CN107153722A
CN107153722A CN201710124652.XA CN201710124652A CN107153722A CN 107153722 A CN107153722 A CN 107153722A CN 201710124652 A CN201710124652 A CN 201710124652A CN 107153722 A CN107153722 A CN 107153722A
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China
Prior art keywords
matching network
impedance
efficiency
input
prediction
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CN201710124652.XA
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CN107153722B (en
Inventor
亚瑟·M·霍瓦尔德
约翰·C·小瓦尔考
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Lam Research Corp
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Lam Research Corp
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Priority claimed from US15/059,778 external-priority patent/US9831071B2/en
Priority claimed from US15/145,601 external-priority patent/US9837252B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/36—Circuit design at the analogue level
    • G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/36—Circuit design at the analogue level
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks

Abstract

The present invention relates to the system and method for the parameter that matching network model is determined using equipment and efficiency, the system and method for describing using a variety of one or more equipment and efficiency to determine the preset parameter of matching network model.Compare the value of the value of the efficiency measured using network analyser and the efficiency of the prediction determined using matching network model.It compare to determine if preset parameter distributing to matching network model.

Description

The system and method that the parameter of matching network model is determined using equipment and efficiency
Technical field
The present invention relates to the system for the parameter that matching network model is determined using one or more equipment (fixture) and efficiency And method.
Background technology
Plasma system is used to control corona treatment.Plasma system includes multiple radio frequencies (RF) source, impedance Match circuit and plasma reactor.Workpiece is placed in plasma room, and produces in plasma chamber plasma To handle workpiece.Importantly, a part in subject plasma system does not make with another replacing or together with another Limitation, workpiece is handled in similar or uniform mode.For example, when a part for plasma system is replaced by separately During a part, workpiece is treated differently for printing.
Exactly in this context, the embodiment described in the disclosure is produced.
The content of the invention
Embodiment of the present disclosure is provided for determining the ginseng of matching network model using one or more equipment and efficiency Several device, method and computer program.It should be appreciated that present embodiment can be in many ways (for example, technique, dress Put, method on system, hardware component or computer-readable medium) realize.Some embodiments are described below.
Radio frequency (RF) matching network model is the mathematical notation or computer representation of physical impedance matching network, and for root The RF characteristics in the output end of impedance matching network, example are predicted according to the measured value of the RF performances of the input in impedance matching network Such as electric current, voltage and phase.As starting point, matching network model has the form of the modelling comprising a variety of models. The example of model is provided in patent application with patent No.14/245,803.Each model includes one or more circuits Element.The value of circuit element in a model be inductance and electric capacity based on the schematic diagram from the impedance matching network Know the approximation of value and some physical quantitys (for example, inductance not comprising connect band in the diagram).Matching network model Initial point it is pre- to provide measured value and matching network model by the value for obtaining experimental measurements and adjustment circuit element in groups Fitting between measured value improves.A kind of method for obtaining experimental measurements is that chip is used in plasma tool.In work During tool operation during the measurement of (on-tool), high-precision RF voltage and currents probe is temporarily mounted in plasma work The output end for the impedance matching network implemented in tool, to run a variety of plasma recipes, and recording needle exists to each formula Radio-frequency voltage and electric current that the output end of impedance matching network is measured, and change the electricity in the model of the matching network model The value of circuit component is to provide the fitting between measured value and predicted value.
However, due to using the tool time of plasma tool occupied, therefore during instrument operation, measurement is time-consuming. Popped one's head in by using high-precision RF voltage and currents, the benchmark of matching network model is produced for each impedance matching network Value.However, wherein having specific sequence number and each single matching network of model and wherein having another sequence number and same Any other single matching network of model is slightly different.High-precision radio frequency electricity is realized on about six single matching networks The use of pressure and current probe, this needs some weeks.
Once benchmark Matching Model is present, then the more accurate model for single matching network is used for each matching The desk type network analyzer measured value manufacture that network is obtained.By the way that physical testing equipment (is sometimes referred to as loaded in the present invention Impedance devices) it is connected to the output end of impedance matching network to be measured, and by using network analyser to obtain in impedance matching The measured value of the input of network obtains measured value.Load impedance equipment be configured to have with multiple condition of plasma An identical impedance, so that one of test when many instruments are run is simulated in the measurement carried out by network analyser.It is based on The measured value obtained using load impedance equipment, for impedance matching network adjust matching network model, with produce than for More accurate result in the case of impedance matching network application benchmark model.
It should be noted that plasma impedance is as various frequencies are (for example, 2 megahertzs of (MHz), 27MHz, 60MHz, 400,000 Hertz (kHz) etc.) RF generators number and change.That is, in some embodiments, for wherein using Two or more in 400kHz RF generators, 2MHz RF generators, 27MHz RF generators and 60MHz RF generators Multiple frequency plasma system, the impedance of plasma is different under the different frequency of RF generators.
In numerous embodiments, different load impedance equipment are used for different frequencies.For example, the first load impedance is set 2MHz is ready for use on, the second load impedance equipment is used for 27MHz, and the 3rd load impedance equipment is used for 60MHz.
In some embodiments, groups of multiple bench devices (load impedance equipment is sometimes referred to herein) be for A variety of condition of plasma when imitation instrument is run, to obtain multiple network analyser measured values.Utilize multiple bench devices Multiple network analyser measured values be used to create a reference value of matching network model, without the grade with plasma from Chip is run on daughter instrument, so as to save the time associated with the resource using online tool and online tool.It is multiple Bench device is cheap.Multiple bench devices be by resistor or capacitor or inductor or cable or two of which or What the combination of more kinds of combinations was built.For example, a coaxial cable comprising resistance and variable-length in the equipment.It is many Each in individual bench device is continuously attached to the output end of the impedance matching network, and obtains in impedance matching net The combination variable capacitance network analyser related to the input of matching network with one or more values of RF frequency of network Measured value.The value of the circuit element of Optimized Matching network model, to obtain in the case of without using plasma from network point Uniformity (agreement) between the predicted value that the measured value and network analyser measured value of parser are produced.
In numerous embodiments, carry out measurement efficiency using load impedance equipment and network analyser, and use pair net Network model carrys out forecasting efficiency, and obtains uniformity between the efficiency and the efficiency of prediction measured, to determine matching network model Parameter.Using for efficiency enables parameter accurately to determine.In addition, as described above, in computational efficiency without using plasma Instrument, such as without using plasma chamber.It is this to save tool time without using plasma tool.
In some embodiments, realize the impedance measured using multiple desktop apparatus with using matching network model prediction Impedance between uniformity, and the uniformity between the efficiency that measures and the efficiency of prediction is realized, with calculating parameter.Efficiency Use with impedance causes parameter accurately to determine.
Some advantages of system and method described in the present invention include and set up matching network model and in testboard It is upper to be detected, without using chip and tool time.The additional advantage of system and method described in the present invention Comprising compared with the condition of plasma covered in plasma tool using actual different formulations, using multiple equipment The wider array of condition of plasma of coverage.When creating matching network model using plasma tool, for certain limit Impedance matching network variable capacitance and processing test chip RF frequency, matching network model is accurate.When future When new method uses different variable capacitances or different RF frequencies, matching network model is for the different variable capacitance and not Same RF frequency will not be so accurate.By using the wide condition of plasma of multiple equipment simulation context, therefore generation will The matching network model used under large-scale condition of plasma.In addition, manufacture multiple equipment is relatively cheap.
Additional advantage includes efficiency and the efficiency of prediction using measuring to determine the parameter of matching network model.Efficiency Use cause parameter accurately to determine.
Specifically, some aspects of the invention can be described below：
1. a kind of method for being used to determine the preset parameter of matching network model, it includes：
Measure the efficiency of impedance matching network；
When matching network model is allocated fixed inductance, fixed capacity and fixed resistance, in the input of matching network model Place applies input power to calculate the prediction power output of the output of the matching network model；
The efficiency of the prediction of the impedance matching model is calculated according to the prediction power output and the input power；
Whether the efficiency according to measuring determines the efficiency of the prediction in predetermined limits；And
After the efficiency that measures according to determines the efficiency of the prediction in predetermined limits, by the fixed inductance, institute State fixed capacity and the fixed resistance distributes to the matching network model.
2. the method according to clause 1, wherein when the impedance matching network is connected to network analyser and load impedance is set The efficiency measured when standby described in measurement, wherein the network analyser has input port and output port, wherein the load The combined impedance of the input port of impedance devices and the network analyser represents condition of plasma.
3. the method according to clause 1, it is additionally included in the efficiency measured according to and determines that the efficiency of the prediction does not exist When in predetermined limits, change the fixed inductance or the fixed capacity or the fixed resistance or it is therein both or more The combination of many persons.
4. the method according to clause 1, wherein when the first port of network analyser is connected to the impedance matching network The efficiency measured during input described in measurement, methods described also includes：
When the second port of the network analyser is connected to the output end of equipment and when the equipment is connected to the impedance During the output end of match circuit, S21 parameters are received from the network analyser；
Calculate S21 parameters square with 1 and S11 parameters square between poor ratio, with the efficiency measured described in determining.
5. the method according to clause 1, wherein be controlled as can power transformation with predetermined combination when the impedance matching network Hold and network analyser under predetermined radio frequency when operating, calculate the efficiency measured, wherein network analyser company It is connected to the input of the impedance matching network.
6. the method according to clause 1, it also includes：
Make the fixed inductance or the fixed capacity or the fixed resistance or in them both or more person combination It is associated with the characteristic (identity) of the impedance matching network；
Stored in storage arrangement the fixed inductance or the fixed capacity or the fixed resistance or in them two The association between the combination of person or more person and the characteristic；
Receive the characteristic of the impedance matching network；And
When receiving the characteristic, the matching network model is initialized with the fixed inductance or the fixed electricity Hold or the fixed resistance or in them both or more person combination.
7. the method according to clause 1, wherein when network analyser be connected to the input of the impedance matching network and When the output end of the impedance matching network is connected to load equipment, the efficiency measured described in measurement.
8. the method according to clause 1, wherein when the matching network model is initialized to combination capacitor value and is penetrated Frequently when (RF), the power output for applying in the input of matching network model and measuring is performed.
9. the method according to clause 8, wherein, the combination capacitor value and the combination capacitor value phase of the impedance matching network Together, and the RF is identical with the RF of the network analyser for measuring the efficiency measured.
10. the method according to clause 1, wherein the fixed inductance, the fixed capacity and the fixed resistance are in substrate Processing during do not change.
11. the method according to clause 1, wherein, the resistance is calculated according to the prediction power output and the input power The efficiency of the prediction of anti-Matching Model is performed by calculating the ratio of the prediction power output and the input power.
12. a kind of system for being used to determine the preset parameter of matching network model, it is included：
Processor, it is configured as receiving input power,
Wherein described processor be configured as matching network model be allocated fixed inductance, fixed capacity and during fixed resistance The input end of the matching network model applies the input power to calculate the output in the matching network model Prediction power output,
Wherein described processor is configured as calculating the impedance matching according to the prediction power output and the input power The efficiency of the prediction of model,
Wherein described processor is configured as determining whether the efficiency of the prediction is in predetermined limits according to the efficiency measured, And
Wherein described processor is configured as determining the efficiency of the prediction in the pre- fixed limit in the efficiency measured according to After in degree, the fixed inductance, the fixed capacity and the fixed resistance are distributed into the matching network model；With
The storage arrangement of the processor is coupled to, wherein the storage arrangement is configured as storing the matching network mould Type.
13. the system according to clause 12, wherein when the impedance matching network is connected to network analyser and load impedance The efficiency measured during equipment described in measurement, wherein the network analyser has input port and output port, wherein described negative The combined impedance for carrying the input port of impedance devices and the network analyser represents condition of plasma.
14. the system according to clause 12, wherein the processor is configured to determine institute in the efficiency measured according to When stating the efficiency of prediction not in the predetermined limits, the fixed inductance or the fixed capacity or the fixed electricity are changed Resistance or in them both or more person combination.
15. the system according to clause 12,
The survey is wherein measured when the first port of network analyser is connected to the input of the impedance matching network The efficiency obtained,
The second port that wherein described processor is configured as the network analyser is connected to the output end of equipment and worked as When the equipment is connected to the output end of the impedance matching circuit, S21 parameters are received from the network analyser；
Wherein described processor be configured as calculating the S21 parameters square and 1 and S11 parameters square between poor ratio Rate, to determine the efficiency measured.
16. the system according to clause 12, wherein when the impedance matching network be controlled as it is variable with predetermined combination Electric capacity and when network analyser is operated under predetermined radio frequency, the efficiency measured described in measurement, wherein the network analyser It is connected to the input of the impedance matching network.
17. the system according to clause 12,
Wherein described processor be configured as making the fixed inductance or the fixed capacity or the fixed resistance or they In both or more person combination it is associated with the characteristic of the impedance matching network；
Wherein described processor is configured as storing the fixed inductance or the fixed capacity or institute in storage arrangement State fixed resistance or in them both or more person combination the characteristic between the association；
Wherein described processor is configured as receiving the characteristic of the impedance matching network；And
Wherein described processor is configured as when receiving the characteristic, initializes the matching network model with described Fixed inductance or the fixed capacity or the fixed resistance or in them both or more person combination.
18. the system according to clause 12, wherein, in order to calculate institute according to the prediction power output and the input power The efficiency of the prediction of impedance matching model is stated, the processor is configured as calculating the prediction power output and described defeated Enter the ratio of power.
19. a kind of system for being used to determine the preset parameter of matching network model, it includes：
Radio frequency (RF) generator, it is configured as producing RF signals；
Impedance matching network, it has the input for being coupled to the RF generators；
Plasma chamber, it is coupled to the output end of the impedance matching network；
The mainframe computer system of the RF generators is coupled to, wherein the mainframe computer system includes processor and memory device Put, wherein the storage arrangement is coupled to the processor,
Wherein described processor is configured as receiving input power,
Wherein described processor be configured as matching network model be allocated fixed inductance, fixed capacity and during fixed resistance The input end of the matching network model applies the input power to calculate the output of the matching network model Predict power output,
Wherein described processor is configured as calculating the impedance matching according to the prediction power output and the input power The efficiency of the prediction of model,
Wherein described processor is configured as determining whether the efficiency of the prediction is in predetermined limits according to the efficiency measured, And
Wherein described processor is configured as determining the efficiency of the prediction in the pre- fixed limit in the efficiency measured according to After in degree, the fixed inductance, the fixed capacity and the fixed resistance are distributed into the matching network model,
Wherein described storage arrangement is configured as storing the matching network model.
20. the system according to clause 19, wherein when the impedance matching network is connected to network analyser and load impedance The efficiency measured during equipment described in measurement, wherein the network analyser has input port and output port, wherein described negative The combined impedance for carrying the input port of impedance devices and the network analyser represents condition of plasma.
21. the system according to clause 19, wherein the processor is configured to determine institute in the efficiency measured according to When stating the efficiency of prediction not in the predetermined limits, the fixed inductance or the fixed capacity or the fixed electricity are changed Resistance or in them both or more person combination.
22. the system according to clause 19,
The survey is wherein measured when the first port of network analyser is connected to the input of the impedance matching network The efficiency obtained,
The second port that wherein described processor is configured as the network analyser is connected to the output end of equipment and worked as When the equipment is connected to the output end of the impedance matching circuit, S21 parameters are received from the network analyser；
Wherein described processor be configured as calculating the S21 parameters square and 1 and S11 parameters square between poor ratio Rate, to determine the efficiency measured.
23. the system according to clause 19, wherein when the impedance matching network be controlled as it is variable with predetermined combination Electric capacity and when the network analyser is operated under predetermined radio frequency, calculate described in the efficiency that measures.
With reference to accompanying drawing, other side will become apparent from the following detailed description.
Brief description of the drawings
With reference to accompanying drawing with reference to being described below in detail, embodiments of the present invention will be more fully understood, wherein：
Figure 1A is the one or more variable frequencies for the network analyser for showing to determine to be connected to load impedance equipment 1 and true One or more variable capacitances of constant impedance matching network with matching network model use one or more of variable ratio frequency changers The block diagram of rate and one or more variable capacitances.
Figure 1B is to show to determine to be connected to one or more variable frequencies of load impedance equipment N network analyser and true One or more variable capacitances of constant impedance matching network with matching network model use one or more of variable ratio frequency changers The block diagram of rate and one or more variable capacitances.
Fig. 2A is the block diagram for the numerous embodiments for showing load impedance equipment.
Fig. 2 B are an embodiments of curve map, and it is to be shown with load impedance equipment 1 to load impedance equipment N Realize a variety of condition of plasma.
Fig. 3 is the schematic diagram for an embodiment for showing mainframe computer system, and it is to illustrate matching network model The determination of preset parameter.
Fig. 4 is the schematic diagram of an embodiment of system, its efficiency measured to illustrate impedance matching network It is determined that.
Fig. 5 is the schematic diagram of an embodiment of mainframe computer system, and it is based on working as impedance matching network to illustrate It is connected to the efficiency measured during load impedance equipment 1 and the efficiency of prediction determines the value of preset parameter.
Fig. 6 is the flow chart of an embodiment of the method that preset parameter is determined by using impedance and efficiency.
Fig. 7 is the survey for illustrating to determine impedance matching network when impedance matching network is connected to load impedance equipment N The schematic diagram of one embodiment of the system of the efficiency obtained.
Fig. 8 be show by mainframe computer system perform to based on when impedance matching network is connected to load impedance equipment The efficiency measured during N determines the schematic diagram of the method for the value of preset parameter with the efficiency of prediction.
Fig. 9 is the flow chart of an embodiment of the method that preset parameter is determined by using impedance and efficiency.
Figure 10 is the schematic diagram of an embodiment of plasma system, and it is to illustrate in plasma system The use of distribution network model.
Figure 11 is the block diagram of an embodiment of matching network model.
Embodiment
Following embodiment is described for determining matching network model using one or more equipment and efficiency The system and method for parameter.It is evident that these embodiments can be in some or all of feelings for not having these details Implement under condition.In other cases, known processing operation is not described in detail, in order to avoid unnecessarily make the embodiment party of the present invention Formula is unclear.
In numerous embodiments, carry out measurement efficiency using network analyser, and predict using matching network model Efficiency.It is determined that whether there is uniformity between the efficiency and the efficiency of prediction measured.It is determined that existing a certain degree of consistent Property when, the parametric distribution of efficiency institute foundation that will determine prediction gives matching network model.Otherwise, parameter is changed, until reaching one Cause.Then matching network model is given by the parametric distribution of change.
Figure 1A is the one or more variable frequencies for the network analyser 102 for showing to determine to be connected to load impedance equipment 1 With one or more variable capacitances of impedance matching network 1 to use one or more of variable ratio frequency changers in matching network model The block diagram of rate and one or more variable capacitances.In some embodiments, network analyser 102 is to be connected to net for measurement The measurement apparatus of the s- parameters of the electrical network of network analyzer 102.For example, network analyser 102 measures the reflection of electrical network Parameter and configured transmission, for example, impedance, reflectance factor, standing-wave ratio of voltage etc..
In some embodiments, network analyser 102 used herein includes signal generator, one or more sensings Device and display screen.The signal generator produces radio frequency (RF) signal, and one or more of sensors sense s- parameters, described Display screen shows s- parameters.
Network analyser 102 is connected to the input of load impedance equipment 1 in its output end 113 via RF cables 104 1111.Load impedance equipment 1 has the impedance for representing plasmoid, such as the impedance in plasma room.Network point Parser 102 produces the RF signals with frequency f11, and provides RF letters via output end 113, RF cables 104 and input 1111 Number arrive load impedance equipment 1.When the RF signals with frequency f11 are provided to load impedance equipment 1, in load impedance equipment The 1 measurement load impedance of input 1111 Zo1m.
Network analyser 102 disconnects with load impedance equipment 1, then in its output end 113 via radio frequency (RF) cable 106 It is connected to the input 107 of the branch circuit of impedance matching network 1.For example, branch circuit will be connected during the processing of chip It is connected to x megahertzs of (MHz) RF generator or y MHz RF generators or z MHz RF generators.If using multiple RF generators, Then branch circuit is one of multiple branch circuits.For example, when using x MHz RF generators and y MHz RF generators, in resistance Two branch circuits are realized in anti-matching network 1.The input of one in two branch circuits is connected to x MHz RF generations Another input in the output end of device, two branch circuits is connected to the output end of y MHz RF generators.Two points The output end of branch circuit is connected with each other, and is connected to RF transmission lines or is connected to load impedance equipment.In some embodiment party In formula, the embodiment of x MHz RF generators includes 2MHz RF generators, and the embodiment of y MHz RF generators includes 27MHz RF generators, the embodiment of z MHz RF generators includes 60MHz RF generators.In numerous embodiments, x MHz RF productions The embodiment of raw device includes 400 KHzs (kHz) RF generators, and the embodiment of y MHz RF generators is produced comprising 27MHz RF Device, the embodiment of z MHz RF generators includes 60MHz RF generators.
Each branch circuit of impedance matching network 1 includes one or more inductors, or one or more capacitors, or One or more resistors, or combinations thereof.For example, the branch circuit of impedance matching network 1 includes series circuit, the string Join circuit and include the inductor with capacitor series coupled.The branch circuit of impedance matching network 1 also includes and is connected to the string Join the parallel circuit of circuit.Parallel circuit includes the capacitor being connected in series with inductor.The branch circuit of impedance matching network 1 Comprising one or more capacitors, and during the processing of chip, the corresponding electric capacity of one or more capacitors is variable , for example, be changed using drive component, etc..For example, the processor of mainframe computer system 112 transmits a signal to driving Position between one or two plate of component to change the variable condenser of impedance matching network 1, to change between two plates Region so that the electric capacity for further changing variable condenser realizes capacitance.The one or more of impedance matching network 1 can The combination variable capacitance of variodenser is arranged to value C11.For example, adjusting the corresponding relative of one or more variable condensers The position of the plate of positioning is to set variable capacitance C11.In order to illustrate, two or more capacitors being connected in parallel with each other Combination capacitor value is the summation of the capacitance of capacitor.As another explanation, two or more electricity being serially connected The combination capacitor value of container is the inverse of the summation reciprocal of the capacitance of capacitor.Illustrated as another, mainframe computer system The drive component that 112 processor control is further described below, with the plate for the variable condenser for moving impedance matching network 1, So as to realize electric capacity C11.The example of impedance matching network 1 is provided in the patent application with application No.14/716,797.
Impedance matching network 1 is also connected in its output end 109 (it is the output end of branch circuit) via RF cables 108 The input 1111 of load impedance equipment 1.Branch circuit is connected to output end 113 in input 107.In addition, impedance matching net The combination variable capacitance of network 1 is arranged to value C11.Load impedance equipment 1 has the impedance for representing condition of plasma, for example, Impedance in plasma room etc..Network analyser 102 produces the RF signals with frequency f11, and via output end 113, RF Cable 106 and input 107 provide RF signals to impedance matching network 1.Impedance matching network 1 makes to be connected to impedance matching network The impedance matching in source of the impedance of 1 load with being connected to impedance matching network 1, to produce the signal of modification, it is RF signals. The embodiment of load includes load impedance equipment 1 and RF cables 108, and the embodiment in source includes network analyser 102 and RF electricity Cable 106.The signal of modification is supplied to load impedance equipment 1 from impedance matching network 1 via output end 109 and input 1111. When RF signals are provided with the impedance matching network 1 for combining variable capacitance C11 by network analyser 102 via RF cables 106 When, the input impedance Zi1m in the input 107 of impedance matching network 1 is measured by network analyser 102.As used herein Impedance is complex values.For example, impedance Z is complex value R+jX, wherein R is resistance, and X is reactance, and j is plural number.
Network analyser 102 is connected to mainframe computer system 112 via network cable 110, and mainframe computer system 112 is included Processor and storage arrangement.The embodiment of mainframe computer system 112 includes notebook computer or desktop computer or flat board electricity Brain or smart phone etc..As used herein, using CPU (CPU), controller, application specific integrated circuit (ASIC) Or PLD (PLD) replaces processor, and these terms are used interchangeably herein.Storage arrangement Embodiment includes read-only storage (ROM), random access memory (RAM), hard disk, volatile memory, non-volatile memories Device, the redundant array of storage disk, flash memories etc..As used herein, the embodiment of network cable be used for Serial mode or in a parallel fashion, or use the cable of the transmission data such as USB (USB) agreement.
The processor of mainframe computer system 112 via network cable 110 receive from network analyser 102 measure it is defeated Enter impedance Z i1m.In the operation 132 of method 130, whether processor determines measured input impedance Zi1m in predetermined resistance In anti-predetermined threshold value, for example, 50 ohm, 55 ohm, 60 ohm, the impedance between 45 and 50 ohm, etc..At some In embodiment, predetermined threshold value and predetermined impedance are received as input by processor via input equipment from user (it enter One step is as described below), and be stored in by processor in the storage arrangement of mainframe computer system 112.In some embodiment party In formula, before the time that input impedance (for example, Zi1m etc.) is measured by network analyser 102, predetermined threshold value and predetermined Impedance is received by processor.When it is determined that measured input impedance Zi1m is in the predetermined threshold value of predetermined impedance, In the operation 134 of method 130, frequency f11 and variable capacitance C11 are stored in the memory of mainframe computer system 112 by processor In device.
On the other hand, when it is determined that measured input impedance Zi1m is not in the predetermined threshold value of predetermined impedance, In the operation 136 of method 130, processor determines the predetermined flexible strategy of distribution to frequency f11 and the predetermined flexible strategy of distribution to variable Electric capacity C11.For example, predetermined flexible strategy are distributed to frequency f11 to produce weighted frequency fw11 by processor, and processor will be pre- Fixed flexible strategy distribute to variable capacitance C11 to produce weighted capacitance Cw11, weighted frequency fw11 and another weighted frequency fww11 Summation Sf1 and weighted capacitance Cw11 and another weighted capacitance Cww11 summation Sc1 is produced and used by following processor. Compared to another electric capacity Co11, small amount of flexible strategy are assigned to electric capacity C11, and compared to another frequency fo11, small amount Flexible strategy be assigned to frequency f11.By distributing flexible strategy to another electric capacity Co11, another weighted capacitance is produced by processor Cww11, by distributing flexible strategy to another frequency fo11, another weighted frequency fww11 is produced by processor.Another frequency fo11 with Another weighted capacitance Co11 causes the impedance measured in the input 107 of impedance matching network 1 in the threshold value of predetermined impedance It is interior.For in another example, flexible strategy 0 are distributed into variable capacitance C11, and flexible strategy 0 are distributed into frequency f11.Lift another example For, variable capacitance C11 and frequency f11 are not stored in the storage arrangement of mainframe computer system 112 to use later.
Once the predetermined flexible strategy of distribution give variable capacitance C11 to frequency f11 and the predetermined flexible strategy of distribution, then method is performed 130 operation 138.For example, the frequency of the RF signals produced by network analyser 102 be changed (for example, from f11 change to F12, changes to f13 from f12, etc.), and/or the variable combination electric capacity of impedance matching network 1 be changed (for example, from C11 change To C12, change from C12 to C13, etc.) so that the input impedance Zi1Qm measured in the input 107 of impedance matching network 1 exists Within the predetermined threshold value of predetermined impedance, wherein Q is greater than zero integer.For example, network analyser 1 is by the frequency of RF signals F12 is changed into from f11, and variable capacitance C11 is not changed.The input impedance Zi1Qm measured by network analyser 102 is predetermined Impedance predetermined threshold value within.Frequency f12 and variable capacitance C11 are stored in storage arrangement by processor.Lift another For example, the variable capacitance C11 of impedance matching network 1 changes into C12 from C11.For example, drive component controls impedance matching net The plate of the variable condenser of network 1, to change the variable capacitance of variable condenser so that impedance matching network 1 it is all variable The combination variable capacitance of capacitor is C12.When network analyser provides the RF signals with frequency f11 to impedance matching network 1 When, network analyser measures the impedance Z i1Qm in the input 107 of impedance matching network 1, and processor determines impedance Z i1Qm Within the predetermined threshold value of predetermined impedance.Frequency f11 and variable capacitance C12 are stored in storage arrangement.With this Mode, calculates multiple frequency f1n and multiple electric capacity C1n and is simultaneously stored in storage arrangement, wherein n be greater than zero it is whole Number so that impedance Z i1Qm is in predetermined threshold value.
Figure 1B is the one or more variable ratio frequency changers for showing to determine to be connected to load impedance equipment N network analyser 102 One or more variable capacitances of rate and impedance matching network 1 with matching network model use one or more variable frequencies With the block diagram of one or more variable capacitances, wherein N is greater than 1 integer.Network analyser 102 breaks with load impedance equipment 1 Open, and load impedance equipment N input 111N is connected to via RF cables 104 in its output end 113.Load impedance equipment N has the impedance for representing condition of plasma, and the condition of plasma and the plasma that is represented by load impedance equipment 1 Condition is different.For example, load impedance equipment N impedance is different from the impedance of load impedance equipment 1.Network analyser 102 is produced RF signals with frequency fN1, and RF signals are provided to load impedance via output end 113, RF cables 104 and input 111N Equipment N.When RF signals are provided to load impedance equipment N, load impedance is measured in load impedance equipment N input 111N ZoNm。
It should be noted that value Zo1m and ZoNm are not steady state values.For example, behaviour of the value Zo1m with load impedance equipment 1 The change of the RF frequency of work and change, and value ZoNm changes with the change of the RF frequency of load impedance equipment N operation.
Network analyser 102 disconnects with load impedance equipment 1, and is connected to impedance matching network 1 via RF cables 106 The input 107 of branch circuit, the output end 109 of branch circuit is connected to the defeated of load impedance equipment N via RF cables 108 Enter to hold 111N.Load impedance equipment N has the impedance for representing condition of plasma, and the condition of plasma is different from by loading The condition of plasma that impedance devices 1 are represented.For example, load impedance equipment N impedance is different from the resistance of load impedance equipment 1 It is anti-.
The combination variable capacitance of one or more variable condensers of impedance matching network 1 is adjusted via drive component, with Reach value CN1.Network analyser 102 produces the RF signals with frequency fN1, and via output end 113 and input 107 by RF Signal is provided to impedance matching network 1 via RF cables 106.Impedance matching network 1 makes the load for being connected to impedance matching network 1 Impedance and be connected to impedance matching network 1 source impedance matching, to produce modified signal, the signal is RF signals. The embodiment of load includes load impedance equipment N and RF cable 108, and the embodiment in source includes network analyser 102 and RF cables 106.Modified signal is provided to load from impedance matching network 1 via output end 109, RF cables 108 and input 111N Impedance devices N.Impedance matching net is arrived when the RF signals with frequency fN1 are provided by network analyser 102 via RF cables 106 The branch circuit of network 1 and when the combination variable capacitance of impedance matching network is CN1, in the input 107 of impedance matching network 1 Measure input impedance ZiNm.
The processor of mainframe computer system 112 via network cable 110 receive from network analyser 102 measure it is defeated Enter impedance Z iNm.In the operation 152 of method 150, whether processor determines the input impedance ZiNm measured in predetermined impedance Predetermined threshold value within.When it is determined that measured input impedance ZiNm is in the predetermined threshold value of predetermined impedance, in side In the operation 154 of method 150, frequency fN1 and variable capacitance CN1 are stored in the storage arrangement of mainframe computer system by processor In.
On the other hand, when it is determined that measured input impedance ZiNm is not within the predetermined threshold value of predetermined impedance, Then in the operation 156 of method 150, processor distributes predetermined flexible strategy to frequency fN1 and the predetermined flexible strategy of distribution to variable Electric capacity CN1.For example, processor distributes predetermined flexible strategy to frequency fN1 to produce weighted frequency fwN1, and predetermined flexible strategy are divided Dispensing variable capacitance CN1 with produce weighted capacitance CwN1, weighted frequency fwN1 and another weighted frequency fwwN1 summation SfN with And weighted capacitance CwN1 and another weighted capacitance CwwN1 summation ScN is produced and used by following processor.Compared to another Electric capacity CoN1, small amount of flexible strategy are assigned to electric capacity CN1, and compared to another frequency foN1, small amount of flexible strategy are assigned to Frequency fN1.Another weighted capacitance CwwN1 is produced by distributing flexible strategy to another electric capacity CoN1 by processor, is led to by processor Cross distribution flexible strategy and produce another weighted frequency fwwN1 to another frequency foN1.Another frequency foN1 and another weighted capacitance CoN1 causes impedance that the input 107 in impedance matching network 1 measures within the threshold value of predetermined impedance.In another example For, flexible strategy 0 are distributed into variable capacitance CN1, flexible strategy 0 are distributed into frequency fN1.For lifting another example, variable capacitance CN1 It is not stored in the storage arrangement of mainframe computer system 112 to use later with frequency fN1.
Once the predetermined flexible strategy of distribution give variable capacitance CN1 to frequency fN1 and the predetermined flexible strategy of distribution, method is carried out 150 operation 158.For example, the frequency of the RF signals produced by network analyser 102 be changed (for example, from fN1 change to FN2, changes to fN3 from fN2, etc.), and/or the variable combination electric capacity of impedance matching network 1 be changed (for example, from CN1 change To CN2, change from CN2 to CN3, etc.) so that the input impedance ZiNQm measured in the input 107 of impedance matching network 1 exists Within the predetermined threshold value of predetermined impedance.For example, network analyser 1 changes the frequency of RF signals to fN2 from fN1, and can Become electric capacity CN1 not to be changed.The input impedance ZiNQm measured by network analyser 102 predetermined impedance predetermined threshold it It is interior.Frequency fN2 and variable capacitance CN1 are stored in storage arrangement by processor.For in another example, impedance matching network 1 variable capacitance CN1 changes into CN2 from CN1.For example, the plate of the variable condenser of drive component control impedance matching network 1, To change the variable capacitance of variable condenser so that the combination variable capacitance of all variable condensers of impedance matching network 1 For CN2.When network analyser 102 provides the RF signals with frequency fN1 to impedance matching network 1, network analyser 102 is surveyed The impedance Z iNQm in the input 107 of impedance matching network 1 is measured, and processor determines impedance Z iNQm in the pre- of predetermined impedance Within fixed threshold value.Frequency fN1 and variable capacitance CN2 are stored in storage arrangement.By this way, multiple frequencies are calculated FNn and multiple electric capacity CNn is simultaneously stored in storage arrangement so that impedance Z iNQm is within predetermined threshold value.
In some embodiments, any quantity (for example, 10,15,20,100,200,300,1000,10000, 100000,1000000 etc.) load impedance equipment, for example, N etc., frequency and impedance for determining network analyser 102 The variable capacitance of matching network 1 so that the branch circuit of impedance matching network 1 input 107 impedance in predetermined resistance In anti-predetermined threshold.The different plasma bars of plasma in each load impedance equipment N simulation plasma chambers Part.
It should be noted that in some embodiments, when impedance matching network 1 is connected to network described herein During analyzer 102, impedance matching network 1 is not connected to plasma chamber, and the plasma chamber is further described below.This Outside, in numerous embodiments, when impedance matching network 1 is connected to network analyser 102 described herein, wait from Without the processing of chip in plasma processing chamber.Which save the time that the instrument using plasma processing chamber is run.
Fig. 2A is the schematic diagram for the numerous embodiments for showing load impedance equipment.Load impedance equipment 1 is included：With length Spend l1 cable CB1, resistor R1, inductor L1 and capacitor C1.There is resistor R1 resistance R1, capacitor C1 to have electricity Hold C1, and inductor L1 has inductance L1.In some embodiments, load impedance equipment 1 comprising cable CB1, resistor R1, At least one in inductor L1 and capacitor C1.For example, load impedance equipment 1 comprising cable CB1 but not comprising resistor R1, Inductor L1, capacitor C1.For in another example, load impedance equipment 1 includes inductor L1 and capacitor C1, but does not include Cable CB1 and resistor R1.
Load impedance equipment N is included：Cable CBN, resistor RN, inductor LN and capacitor CN with length lN.Electricity There is resistance device RN resistance RN, capacitor CN there is electric capacity CN, inductor LN to have inductance LN.In some embodiments, load Impedance devices N includes at least one in cable CBN, resistor RN, inductor LN and capacitor CN.For example, load impedance is set Standby N is comprising cable CBN but not comprising resistor RN, inductor LN, capacitor CN.For in another example, load impedance equipment N Comprising inductor LN and capacitor CN, but not comprising cable CBN and resistor RN.For lifting another example, load impedance equipment N Comprising inductance LN, but not comprising capacitor CN, cable CBN and resistor RN.
It should be noted that load impedance equipment N is included in cable length lN, resistance RN, electric capacity CN and inductance LN extremely Few one, this at least one with it is corresponding in the cable length L1 of load impedance equipment 1, resistance R1, electric capacity C1 and inductance L1 One difference.For example, resistance R1 is identical with resistance RN, electric capacity C1 is identical with electric capacity CN, and inductance L1 is identical with inductance LN, and cable Length L1 is different from cable length LN.For in another example, resistance R1 is identical with resistance RN, and electric capacity C1 is identical with electric capacity CN, Cable length L1 is different from cable length LN, and inductance L1 and inductance LN is differed.For lifting another example, load impedance equipment 1 does not include resistor R1, and load impedance equipment N includes resistance RN.Lift for another example, load impedance equipment 1 does not include Cable CB1, and load impedance equipment N includes cable CBN.For in another example, resistance R1 is identical with resistance RN, electric capacity C1 with Electric capacity CN is differed, and cable length L1 is identical with cable length LN, and inductance L1 is differed with inductance LN.
In some embodiments, condition of plasma is represented using gamma (γ) or power reflection ratio, and without using resistance It is anti-to represent.γ is voltage reflection coefficient, and it is the ratio of reflected voltage and service voltage.Reflected voltage has and service voltage phase The amplitude and phase of pass, therefore γ is plural number.When impedance matching network 1 is passed via RF cable connections to RF generators and via RF When defeated line is connected to plasma chamber, reflected voltage is the voltage reflected from plasma chamber towards RF generators, and supplies electricity Pressure is the voltage that impedance matching network 1 is supplied to from RF generators.Power reflection ratio is γ square.It should be noted that for even 50 ohm of RF cables of the input of impedance matching network 1 are connected to, in the γ of the input of impedance matching network 1 and in impedance matching There is one-to-one relation between the impedance of the input of network 1, so in a given case, no matter using impedance or make All it is convenient thing with γ.
In some embodiments, the value of the resistor used in multiple load impedance equipment 1-N is between 0.4 ohm Between 2 ohm.It should be noted that the scope between 0.4 and 2 ohm is the frequency for 60MHz.When using During 2MHz or 27MHz frequencies, scope changes.In numerous embodiments, in load impedance equipment 1 or load impedance equipment N Used coaxial cable is 50 Omega cables.
Fig. 2 B are an embodiments of curve map 250, and it sets to be shown with load impedance equipment 1 to load impedance Standby N realizes a variety of condition of plasma.Curve map 250 depicts real part of the reflectance factor (being represented by γ) in x-axis, Yi Ji Imaginary part in y-axis.Top line 252 in Figure 25 0 is fit to when network analyser 102 is coupled to the coaxial electrical with variable-length The load impedance equipment 1 of cable is produced for variable capacitance C1 and by network analyser 102 to N and during the resistor with the first value RF signals the point that is measured by network analyser 102 of different frequency.In addition, the bottom line 254 in Figure 25 0 is fit to and works as net Network analyzer 102 is coupled to the load impedance equipment 1 of the coaxial cable with variable-length to N and the resistor with second value When the different frequency of RF signals that is produced for variable capacitance CN and by network analyser 102 measured by network analyser 102 Point.When network analyser 102 is coupled to load impedance equipment 1 to N between variable capacitance C1 and variable capacitance CN can Become electric capacity and for the different frequency of the RF signals produced by network analyser 102, between top line 252 and bottom line 254 Institute is a little all measured by network analyser 102.
Fig. 3 is the schematic diagram for an embodiment for showing mainframe computer system 112, and it is to illustrate matching network model The determination of 302 parameter.The embodiment of matching network model 302 illustrates below in reference to Fig. 5.Matching network model 302 is included Multiple models 1 are greater than zero integer to P, wherein P.Model 1 includes fixed resistors in series R1s, the series inductance of fixation Device L1s and fixed series capacitor C1s.Model 1 is also comprising fixed resistors in parallel R1p, the parallel inductor L1p of fixation With fixed shunt capacitor C1p.In addition, model 2 comprising fixed resistors in series R2s, the series reactor L2s of fixation and Fixed series capacitor C2s.Model 2 is also comprising fixed resistors in parallel R2p, the parallel inductor L2p of fixation and fixation Shunt capacitor C2p.In addition, model 3 is comprising fixed resistors in series R3s, the series reactor L3s of fixation and fixation Series capacitor C3s.Model 3 is also comprising fixed resistors in parallel R3p, the parallel inductor L3p of fixation and the parallel connection of fixation Capacitor C3p.Matching network model 302 is that the computer of a part for impedance matching network 1 produces model.For example, pair net Network model 302 is to be connected to x MHz RF generators, or is connected to y MHz RF generators, or is connected to z MHz RF generators Impedance matching network 1 branch circuit computer produce model.Matching network model 302 is by mainframe computer system 112 Processor is produced.
Matching network model 302 (should for example, representing from the branch circuit export of the part as impedance matching network 1 Branch circuit etc.).For example, when x MHz RF generators are connected to the branch circuit of the part as impedance matching network 1 When, matching network model 302 is represented, for example, the computer for belonging to the circuit of impedance matching network 1 produces model etc..Lift another For example, the quantity of the circuit element of matching network model 302 is different from the quantity of the circuit element of impedance matching network 1. Compared with the quantity of the circuit element of the branch circuit of impedance matching network 1, matching network model 302 has the electricity of lesser amt Circuit component.
In some embodiments, matching network model 302 is the reduced form of the part of impedance matching network 1.For example, The variable capacitance of multiple variable condensers of the branch circuit of impedance matching network 1 is combined into by one of impedance matching model Or the combination variable capacitance that multiple variable-capacitance elements are represented, and/or the branch circuit of impedance matching network 1 multiple fixed electricity The fixed inductance of sensor is combined into the combination represented by one or more fixed inductance elements of impedance matching model and fixes electricity Sense, and/or the fixed resistance of multiple fixed resisters of the branch circuit of impedance matching network 1 are combined into by matching network mould The combination fixed resistance that one or more fixed resistive elements of type 302 are represented.In order to illustrate, the electric capacity of the capacitor of series connection leads to Cross following manner combination：The inverse reciprocal to produce multiple electric capacity of each electric capacity is sought, the inverse of these electric capacity is summed, to produce The inverse of raw combination capacitor, and by seeking the inverse reciprocal of the combination capacitor, to produce combination capacitor.It is used as another example Card, the inductance of multiple inductors being connected in series is added, to produce combination inductance, by the resistance of the resistor of multiple series connection It is combined to produce combined resistance.All fixed capacities of all fixed capacity devices of a part for impedance matching network 1 are combined Into the fixed capacity of the combination of the capacity cell of one or more fixations of matching network model 302.Matching network model 302 Other examples are provided in the patent application of Application No. 14/716,797 and the patent application of Application No. 14/245,803.This Outside, described in the patent application of Application No. 14/245,803 and a kind of to produce matching network model from impedance matching network Mode.
It should be pointed out that in some embodiments, fixed parameter (for example, resistance, electric capacity, inductance etc.) is constant Amount.For example, preset parameter can not use drive component to be changed when handling chip.By contrast, the value of variable element exists Changed during the processing of chip.
In numerous embodiments, matching network model 302 has a part of identical topology with impedance matching network 1 Structure (for example, the quantity of connection, circuit element etc.) between circuit element.If for example, branch's electricity of impedance matching network 1 Road includes the capacitor with inductor series coupled, then matching network model 302 includes the capacitor with inductor series coupled. In the present embodiment, the inductor of the inductor of the branch circuit of impedance matching network 1 and matching network model 302 has identical Value, the capacitor of the branch circuit of impedance matching network 1 and the capacitor of matching network model 302 have identical value.Lift For another example, if a part for impedance matching network 1 includes the capacitor with inductor parallel coupled, matching network Model 302 includes the capacitor with inductor parallel coupled.In the present embodiment, the electricity of the branch circuit of impedance matching network 1 The inductor of sensor and matching network model 302 has an identical value, the capacitor of the branch circuit of impedance matching network 1 with The capacitor of distribution network model 302 has identical value.For in another example, the circuit element of matching network model 302 with The circuit element of impedance matching network 1 has identical quantity and identical type, and the connection between circuit element with Connection between the circuit element of impedance matching network 1 has identical type.The example of the type of circuit element includes resistance Device, inductor, capacitor, the type of connection include series, parallel etc..
Method 303 is performed by the processor of mainframe computer system 112.Processor is via network cable from network analyser 112 receive the load impedance Zo1m measured and the load impedance ZoNm measured.Processor initialization matching network model 302 so that It has parameter, and the parameter includes frequency f11, combination variable capacitance C11, fixed inductance L1s, L1p, L2s, L2p, fixed resistance R1s, R1p, R2s, R2p and fixed capacity C1s, C1p, C2s, C2p.In order to illustrate Fig. 3, using with model 1 and 2 without Remaining any model 3 to P matching network model 302.In some embodiments, matching network model 302 is initialized to With summation Sc1, rather than with combination variable capacitance C11, matching network model 302 is initialized to summation Sf1, and It is not with frequency f11.
For example, when impedance matching network 1 has situations below, it is applied to the parameter C11 of matching network model 302 With f11 simulated impedances matching network 1：Impedance matching network 1 is connected in network analyser 102 after load impedance equipment 1 RF signals with frequency f11 are supplied by network analyser 102, impedance matching network 1 has the combination variable capacitance with C11 One or more motors driving capacitor, have one or more fixed capacity devices of the combination fixed capacity with C1s, have One or more capacitors of combination fixed capacity with C2s, the one or more electricity for having the combination fixed capacity with C1p Container, the one or more fixed capacity devices for having the combination fixed capacity with C2p, there is the combination fixed resistance with R1s One or more fixed resisters, the one or more fixed resisters for having the combination fixed resistance with R2s, have with R1p Combination fixed resistance one or more fixed resisters, have with R2p combination fixed resistance one or more fixations Resistor, have the combination fixed inductance with L1s one or more fixations inductor, there is combination with L2s to fix electricity One or more fixed inductances of sense, one or more fixed inductances, the Yi Jiyou for having the combination fixed inductance with L1p The inductor of one or more fixations of combination fixed inductance with L2p.
In some embodiments, the preset parameter value of many elements of matching network model 302 is zero or pair net Network model 302 is insensitive to the parameter value of the fixation of element.For example, the retaining element insensitive to its of matching network model 302 Value in big change do not produce big change in the impedance of matching network model 302.
In some embodiments, retaining element (such as inductor, resistor, capacitor) has immovable fixation Parameter value (such as using motor).
By back conducting the load impedance Zo1m measured via matching network model 302, according to the load impedance measured Zo1m and parameter f11, C11, L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p, processor are calculated The input impedance Zi1p of prediction, input impedance Zi1p are the impedances in the input of matching network model 302.For example, processing Device calculates the impedance Z C11 of one or more capacity cells with variable capacitance C11 according to frequency f11 and according to electric capacity C11, Inductor L1s impedance Z L11s is calculated according to frequency f11 and according to inductance L1s, is calculated according to frequency f11 and according to inductance L2s Inductor L2s impedance Z L21s, inductor L1p impedance Z L11p is calculated according to frequency f11 and according to inductance L1p, according to frequency The rate f11 and impedance Z L21p that inductor L2p is calculated according to inductance L2p, according to frequency f11 and according to electric capacity C1s calculable capacitors C1s impedance Z C11s, according to frequency f11 and according to electric capacity C2s calculable capacitors C2s impedance Z C21s, according to frequency f11 and According to electric capacity C1p calculable capacitors C1P impedance Z C11p, according to frequency f11 and according to electric capacity C2p calculable capacitors C2p resistance Anti- ZC21p, computing impedance ZR1s as resistor R1s resistance R1s, computing impedance ZR2s as resistor R2s resistance R2s, computing impedance ZR1p as resistor R1p resistance R1p, computing impedance ZR2p as resistor R2p resistance R2p.For Explanation, the impedance of processor calculable capacitor as (1/j ω C) calculates the impedance of inductor as j ω L, wherein ω Equal to 2 π f11.Processor by by impedance Z C11, ZC11s, ZC21s, ZC11p, ZC21p, ZL11s, ZL21s, ZL11p, ZL21p, ZR1s, ZR2s, ZR1p and ZR2p combined with measured load impedance Zo1m (for example sum, subtract, produce orientation and Deng), calculate predicted input impedance Zi1p.For example, when matching network model 302 comprising model 1 not comprising model 2 to P When, impedance Z C11p, ZL11p and ZR1p orientation and be impedance Z C11p, ZL11p and ZR1p and.In this example, impedance And be added to impedance Z R1s, ZL11s and ZC11s and with produce impedance Z C11p, ZL11p, ZR1p, ZR1s, ZL11s and ZC11s orientation and.
Similarly, according to measured by applying in output end 304 load impedance ZoNm and the ginseng of matching network model 302 Number, by back conducting measured load impedance ZoNm via matching network model 302, processor is calculated in matching network mould The input impedance ZiNp of the prediction of the input 306 of type 302.For example, processor by the parameter of matching network model 302 from f11 Change into fN1, CN1 changed into from C11, but retain fixed parameter and do not change, the parameter such as L1s of the fixation, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p.In the embodiment using weighted capacitance and weighted frequency In, the parameter of matching network model 302 is changed into SfN from Sf1 and changes into ScN from Sc1 by processor.
When impedance matching network 1 has situations below, parameter CN1 and fN1 the simulation resistance of matching network model 302 are applied to Anti- matching network 1：Impedance matching network 1 is after network analyser 102 is connected to load impedance equipment N by network analyser 102 RF signals of the supply with frequency fN1, impedance matching network 1 has one or more horses of the combination variable capacitance with CN1 Capacitor up to driving, there are one or more fixed capacity devices of the combination fixed capacity with C1s, have the combination with C2s One or more fixed capacity devices of fixed capacity, the one or more fixed capacity devices for having the combination fixed capacity with C1p, Have one or more fixed capacity devices of the combination fixed capacity with C2p, have combination one of fixed resistance with R1s or Multiple fixed resisters, the one or more fixed resisters for having the combination fixed resistance with R2s, there is the combination with R1p One or more fixed resisters of fixed resistance, have with R2p combination fixed resistance one or more fixed resisters, Have one or more fixed inductances of the combination fixed inductance with L1s, have combination one of fixed inductance with L2s or Multiple fixed inductances, the one or more fixed inductances for having the combination fixed inductance with L1p and have with L2p's Combine one or more fixed inductances of fixed inductance.Processor is calculated with variable according to frequency fN1 and according to electric capacity CN1 The impedance Z CN1 of electric capacity CN1 one or more capacity cells, calculates inductor L1s's according to frequency fN1 and according to inductance L1s Impedance Z L1Ns, inductor L2s impedance Z L2Ns is calculated according to frequency fN1 and according to inductance L2s, according to frequency fN1 and according to Inductance L1p calculates inductor L1p impedance Z L1Np, and inductor L2p impedance is calculated according to frequency fN1 and according to inductance L2p ZL2Np, according to frequency fN1 and according to electric capacity C1s calculable capacitors C1s impedance Z C1Ns, according to frequency fN1 and according to electric capacity C2s calculable capacitors C2s impedance Z C2Ns, according to frequency fN1 and according to electric capacity C1p calculable capacitors C1p impedance Z C1Np, According to frequency fN1 and according to electric capacity C2p calculable capacitors C2p impedance Z C2Np, and computing impedance ZR1s, ZR2s, ZR1p and Impedance Z R2p.In order to illustrate, the impedance of processor calculable capacitor calculates the impedance conduct of inductor as (1/j ω C) J ω L, wherein ω are equal to 2 π fN1.The load ZoNm that the processor is measured according to output end by combination (for example sum, subtract, Deng) impedance Z CN1, ZC1Ns, ZC2Ns, ZC1Np, ZC2Np, ZL1Ns, ZL2Ns, ZL1Np, ZL2Np, ZR1s, ZR2s, ZR1p and ZR2p, calculate prediction input impedance ZiNp, with similar to it is above-mentioned be used for by by impedance Z C11, ZC11s, ZC21s, ZC11p, ZC21p, ZL11s, ZL21s, ZL11p, ZL21p, ZR1s, ZR2s, ZR1p and ZR2p combine with the load Zo1m of output measurement Calculate the input impedance ZiNp that the mode described by the input impedance Zi1p of prediction determines prediction.
In the operation 308 of method 303, the processor of mainframe computer system 112 is according to measured input impedance Zi1m It is determined that whether the input impedance Zi1p of prediction is in predetermined scope, and according to being determined measured input impedance ZiNm Whether the input impedance ZiNp of prediction is in predetermined scope.For example, by the processor simultaneously (for example, in the same time, same During one clock cycle etc.) whether the input impedance Zi1p according to measured input impedance Zi1m determination predictions is performed predetermined In the range of and according to measured input impedance ZiNm determine the input impedance ZiNp of prediction whether in predetermined scope. It should be pointed out that performing operation 308 for all load impedance equipment.If for example, three load impedance equipment 1,2 and 3 Used in the way of above-mentioned use load impedance equipment 1 and 2, then processor determines to predict according to measured input impedance Zi1m Input impedance Zi1p whether in predetermined scope, the input impedance of prediction is determined according to measured input impedance Zi2m Zi2p whether in predetermined scope, and according to measured input impedance ZiNm determine prediction input impedance ZiNp whether In predetermined scope.In load impedance equipment 2 impedance matching network 1, and impedance are connected to via RF cables 108 (Figure 1B) When distribution network 1 is connected further to network analyser 102 via RF cables 106 (Figure 1B), the input impedance Zi2m measured is by net Network analyzer 102 is measured.In addition, prediction input impedance Zi2p by processor with similar to by processor calculate prediction Input impedance Zi1p and ZiNp mode is calculated.
When according to measured input impedance Zi1m determine predicted input impedance Zi1p in predetermined scope and When determining that predicted input impedance ZiNp is in predetermined scope according to measured input impedance ZiNm, then in method 300 Operation 310 in, processor distribution preset parameter L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p is to matching network model 302 to be used together with impedance matching network 1.For example, processor mapping preset parameter L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p to impedance matching network 1 identifier, for example, ID1 etc., and By the mapping, the parameter and identifier storage into the storage arrangement of mainframe computer system 112.On the other hand, Determining what the input impedance Zi1p of prediction was measured not in predetermined scope or in basis according to the input impedance Zi1m measured When input impedance ZiNm determines the input impedance ZiNp of prediction not in predetermined scope, then in the operation 312 of method 303, Processor change one in preset parameter L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p or Multiple parameters to produce one or more changes.
In numerous embodiments, by user via the input unit for being connected to processor provide parameter L1s, L1p, L2s, The predetermined scope of one or more of L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p value to processor, and And one or more of the parameter is changed in predetermined scope.For example, user indicates processor, parameter L1s will The 5% of change value, the value is also supplied to processor by user via input unit.During operation 312, processor is by parameter L1s value changes 5%.For in another example, user indicates processor, and parameter C1s value changed into 2%, the value also by with Family is supplied to processor by input unit.During operation 312, parameter C1s value is changed 2% by processor.Lift another show For example, user indicates processor, parameter C1s value is changed into 0%, the value is also supplied to processing by user via input equipment Device.During operation 312, parameter C1s value is changed 0% by processor.
In some embodiments, in operation 312, instead of or except change preset parameter L1s, L1p, L2s, L2p, Beyond one or more of R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p, processor also changes electric capacity C11.For example, Electric capacity C11 is the variable capacitance of one in the model of matching network model 302, and variable capacitance represents impedance matching network 1 Motor driving capacitor.In this embodiment, electric capacity C11 by constant term, linear term and quadratic term summation formula table Show.Linear term is the product of the first coefficient and variable (for example, position of motor drive shaft rotation etc.).Quadratic term is the second coefficient and change Amount square product.In operation 312, processor changes the value of constant, and/or the value, and/or the second coefficient of the first coefficient Value to change variable capacitance C11.
Processor repeats 308 using the parameter of one or more changes, with according to measured input impedance Zi1m It is determined that for the parameter of change prediction input impedance Zi1p whether in predetermined scope and according to measured input Whether impedance Z iNm determines the input impedance ZiNp of the prediction of the parameter for changing in predetermined scope.By this way, Processor repeats 308, until according to measured input impedance Zi1m, the input impedance Zi1p of prediction is in predetermined scope Interior, and according to measured input impedance ZiNm, the input impedance ZiNp of prediction is used in predetermined scope with finding out One or more values of the parameter of one or more corresponding changes of distribution network model 302.Then by one or more correspondences One or more values of parameter of change distribute to matching network model 302.For example, the parameter of change is mapped to by processor The identification number of impedance matching network 1, and the mapping, the parameter of the change and identification number are stored in mainframe computer system 112 In storage device.
It should be noted that in certain embodiments, the value of parameter is identical with parameter.For example, parameter L1s, L1p, L2s, L2p, Each in R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p is value.Therefore, when values change, parameter change.
In input impedance Zi1m measured determined by the operation 132 such as Figure 1A not in the predetermined threshold of predetermined impedance Within and measured input impedance ZiNm as determined by Figure 1B operation 152 not in the predetermined threshold value of predetermined impedance Within embodiment in, perform operation 308 for the input impedance Zi1Qm and ZiNQm (see Figure 1A and 1B) that measure.For example, In operation 308, it is determined that for the input impedance Zi1Qm that the measures prediction obtained input impedance Zi1p whether measured In input impedance Zi1Qm predetermined scope, and for the input impedance of the input impedance ZiNQm measured the predictions obtained Whether ZiNp is in measured input impedance ZiNQm predetermined scope.It is determined that the input impedance Zi1P of prediction is being measured Input impedance Zi1Qm predetermined scope in when, and predict input impedance ZiNp the input impedance ZiNQm's measured When in predetermined scope, operation 310 is performed.On the other hand, it is determined that the input impedance Zi1p predicted is not in the input measured In impedance Z i1Qm predetermined scope, also, the input impedance ZiNp predicted is not in the predetermined of the input impedance ZiNQm measured In the range of when, perform operation 312.
Fig. 4 is the schematic diagram of an embodiment of plasma system 400, and it is to illustrate impedance matching network 1 The determination of efficiency.System 400 includes network analyser 402, impedance matching network 1, load impedance equipment 1 and mainframe computer system 112.Mainframe computer system 112 is connected to network analyser 402 via network cable 404.
Network analyser 402 has port S1 and another port S2.In some embodiments, port S2 is input Mouthful, and port S1 is output port.Port S1 is connected to the input 107 of impedance matching network 1 via RF cables 106, and holds Mouth S2 is connected to the output end 406 of load impedance equipment 1 via RF cables 408.It should be noted that the output of impedance matching network 1 End 109 is connected to combination load equipment 410, combination load equipment 410 include the inductance and/or electric capacity of load impedance equipment 1 with And port S2 resistance, such as 50 ohm, between 49 and 51 ohm.In some embodiments, combination load equipment 410 Impedance simulation condition of plasma A, the impedance, the predetermined impedance scope of plasma such as plasma.
When the combination variable capacitance of one or more variable condensers of impedance matching network 1 is set to value C11, network Analyzer 402 is operated with frequency f11.For example, network analyser 402 produce with frequency f11 RF signals, and by RF signals from Port S1 is sent to the input 107 of impedance matching network 1 via RF cables 106.In some embodiments, impedance matching net The combination variable capacitance of one or more variable condensers of network 1 is arranged to the value different from value C11, and network analyser 402 operate under the frequency different from frequency f11.Impedance matching network 1 receives RF signals and makes load (for example, RF cables 108 With combination load equipment 410 etc.) impedance and the impedance matching in source (for example, RF cables 106 and port S1 etc.), to produce through repairing The RF signals changed.Modified RF signals are supplied to the load equipment 410 of combination.For example, modified RF signals are via negative Carry the port S2 that impedance devices 1 are delivered to network analyser 402.
When modified RF signals are provided to combination load equipment 410, the measurement S21 of network analyser 402 parameters, The amount of S11 parameters and the power P o1m for passing through RF signal outputs in S1 ports.For example, network analyser 402 is in port S1 Place's measurement is by being sent to the power P o1m that the RF signals of impedance matching network 1 are provided via RF cables 106.Parameter S11 and S12 It is scattering parameter.Scattering parameter S11 and S21 are voltage parameters, and related power is square of scattering parameter.For example, being input to Port S1 power is S11 with the ratio from the port S1 power exported2, and be input to port S2 power with from port S1 The ratio of the power of output is S212.Network analyser 402 via network cable 404 by power P o1m amount, S11 parameters and S21 parameters are sent to the processor of mainframe computer system 112.When the one or more variable condensers of impedance matching network 1 Combination variable capacitance is arranged to value C11, and network analyser 402, when being operated with frequency f11, processor computing impedance is matched The efficiency ε 1m of network 1 as S21 parameters square and 1 and S11 parameters square between poor ratio.The ratio is expressed as
It should be noted that in some embodiments, the efficiency that measures of impedance matching network 1 is not individual digit, but is taken Certainly in the impedance for the load for being connected to impedance matching network 1.
In some embodiments, when load impedance equipment 1 be designed to it is loss-free or when being lost with minimum power, For example, in the case that the power attenuation in load impedance equipment 1 is significantly less than power attenuation of impedance matching network 1 etc., making With equation (1) measurement efficiency ε 1m.Efficiency ε 1m are the efficiency of combination load equipment 410.In some embodiments, in load resistance Anti- equipment 1 changes the ratio in the case of having a small amount of power attenuations.Although in some embodiments, efficiency ε 1m are in resistance Determined under any value of the combination variable capacitance of anti-matching network 1 and the RF frequency of network analyser 402, but efficiency ε 1m couple In S112Small value be accurate, and with S112Become big and become inaccurate.In numerous embodiments, work as impedance matching When network 1 is tuned or almost tunes, such as combination variable capacitance and the RF of network analyser 402 when impedance matching network 1 Frequency causes S112During close to 0, efficiency ε 1m are determined.Efficiency ε 1m are herein referred to as the efficiency measured.
In some embodiments, it is not load impedance equipment 1, but another load impedance device A is connected to impedance The port S2 of distribution network 1 and network analyser 402.Load impedance device A has the structure identical knot with load impedance equipment 1 Structure, the difference is that load impedance device A includes one or more lossless capacitors and/or one or more lossless inductors, and And do not include any resistor.For example, load impedance device A includes one with one or more lossless inductor series coupleds Or multiple lossless capacitors.One or more lossless capacitors are connected to input 1111, and this is one or more lossless Inductor is coupled to output end 406.For in another example, load impedance device A includes and one or more lossless inductors One or more lossless capacitors of series coupled.One or more lossless inductors are connected to input 1111, and one Or multiple lossless capacitors are coupled to output end 406.
In some embodiments, lossless circuit element (such as inductor, capacitor, resistor) is such circuit Element：There is no power attenuation or power attenuation to be less than the power attenuation of scheduled volume when electric current is by the circuit element.
Fig. 5 is the schematic diagram of the embodiment of mainframe computer system 112, its to illustrate to determine preset parameter L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p value.Matching network model 302 is initialized to have and penetrated Frequency f11, electric capacity C11 and preset parameter L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p.For example, User via input unit to the processor of mainframe computer system 112 provide fixed value f11, C11, L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p are for initialization matching network model 302.In certain embodiments, Distribution network model 302 is initialized to have and Sc1, rather than combination variable capacitance C11, and the quilt of matching network model 302 It is initialized as having and Sf1, rather than frequency f11.
Processor receives the power output Po1m measured via network cable 404 from network analyser 402.In matching network Model 302 be initialized to radio frequency f11, electric capacity C11 and parameter L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, During C1s, C1p, C2s and C2p time, processor applies input power at the input 306 of matching network model 302 Pi1p, and via matching network model 302 circuit element forward direction transmission input power Pi1p to calculate matching network model Prediction power output Po1p at 302 output end 304.For example, when matching network model 302 include circuit element R1s, C1s, During L1s and C11 tandem compound, the magnitude of current is transmitted by the tandem compound, with determine to be consumed by resistor R1s power P Rs, The power P Cs consumed by capacitor C1s, the power P Ls consumed by inductor L1s and the power consumed by capacitor C11 PC1s.Processor calculate input power Pi1p, power P Rs, power P Cs, power P Ls and power P C1s orientation and, to calculate The power output Po1p of prediction.
In some embodiments, input power Pi1p is identical with power P o1m.In numerous embodiments, input power Pi1p is randomly choosed by the processor of mainframe computer system 112.In numerous embodiments, via the input for being connected to processor Equipment receives input power Pi1p from user.
The efficiency ε 1p that processor calculates the prediction of matching network model 302 are used as the power output Po1p of prediction and input Power P i1p ratio.Processor application process 500, to determine whether the corresponding fixed ginseng for changing matching network model 302 One or more of number L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p's is one or more Fixed value.For example, in operation 502, processor determine prediction efficiency ε 1p whether the efficiency ε 1m measured predetermined limits It is interior.Predetermined limits are provided as input via input equipment arrives processor.For example, perform operation 502 before or the side of execution Predetermined limits are supplied to processor before method 500.It is determined that prediction efficiency ε 1p the efficiency ε 1m measured predetermined limits When interior, processor in operation 310 allocation of parameters L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p fixed value is to matching network model 302 to be used together with impedance matching network 1.On the other hand, it is determined that the effect of prediction When rate ε 1p are not in the efficiency ε 1m measured predetermined limits, processor change in operation 312 parameter L1s, L1p, L2s, One or more of L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p one or more values with generate one or The parameter of multiple changes.In order to illustrate, inductor L1s value is changed into V2 by processor from V1, to produce one or more change The parameter of change.As another explanation, inductor L1s value is changed into V2 by processor from V1, and by capacitor C1s value from W1 W2 is changed into, to produce the parameter of one or more changes.
Processor repeats 502 using the parameter of one or more changes, to be determined to be directed to according to the efficiency ε 1m measured Whether the efficiency ε 1p of the prediction of the parameter of change are in predetermined limits.By this way, processor repeats 502, Zhi Daogen According to the efficiency ε 1m measured, the efficiency ε 1p of prediction are in predetermined limits, to find the one or more of matching network model 302 The corresponding one or more values for changing parameter.Then by one or more values of the parameter of one or more corresponding changes Distribute to matching network model 302.For example, the parameter of one or more changes is mapped to impedance matching network 1 by processor Identification number, and host computer is arrived into the identification number storage of the mapping, the parameter of one or more changes and matching network model 302 In the storage arrangement of machine system 112.
In some embodiments, substitute or be additional to change preset parameter L1, L1p, L2s, L2p, R1s, R1p, One or more of R2s, R2p, C1s, C1p, C2s and C2p, in the operation 312 of method 500, with side same as described above Formula changes variable capacitance C11.
Fig. 6 be determined using impedance Z i1p, Zi1m, ZiNp, ZiNm and efficiency ε 1m and ε 1p preset parameter L1s, The flow chart of the embodiment of L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p method 600.Method 600 by mainframe computer system 112 computing device.In the operation 602 of method 600, prediction input resistance is determined by processor Whether anti-Zi1p is in input impedance Zi1m preset range, and whether prediction input impedance ZiNp is in the predetermined of input impedance ZiNm In the range of, and according to the efficiency ε 1m measured, whether the efficiency ε 1p of prediction are in predetermined limits.
It is determined that prediction input impedance Zi1p is in input impedance Zi1m preset range, input impedance ZiNp is defeated for prediction In the preset range for entering impedance Z iNm, and according to the efficiency ε 1m measured, when the efficiency ε 1p of prediction are in predetermined limits, by Manage device and perform operation 310.On the other hand, it is determined that the prediction input impedance Zi1p is not in input impedance Zi1m preset range Interior, either the prediction input impedance ZiNp is not in input impedance ZiNm preset range or according to the efficiency ε measured 1m, when the efficiency ε 1p of the prediction are not in predetermined limits, computing device operation 312.
In some embodiments, processor is not it is determined that the prediction input impedance Zi1p is in the pre- of input impedance Zi1m Determine in scope, either predict input impedance ZiNp not in input impedance ZiNm preset range or according to the efficiency ε measured 1m, the efficiency ε 1p of prediction not in predetermined limits, or it is therein both or more the combination of person when, perform operation 312.Example Such as, it is determined that prediction input impedance Zi1p and predicts input impedance ZiNp not in input impedance Zi1m preset range In input impedance ZiNm preset range, and according to the efficiency ε 1m measured, the efficiency ε 1p of prediction are not in predetermined limits When, computing device operation 312.
Processor repeats 602 using the parameter of one or more changes, whether to determine prediction input impedance Zi1p In input impedance Zi1m preset range, prediction input impedance ZiNp whether in input impedance ZiNm preset range, with And according to the efficiency ε 1m measured, whether the efficiency ε 1p of prediction are in predetermined limits.By this way, processor is repeated 602, until prediction input impedance Zi1p in input impedance Zi1m preset range, prediction input impedance ZiNp in input impedance In ZiNm preset range and according to the efficiency ε 1m measured, the efficiency ε 1p of prediction are used in predetermined limits with finding One or more values of one or more parameters accordingly changed of distribution network model 302.Then accordingly change one or more One or more values of the parameter of change distribute to matching network model 302.For example, the parameter of change is mapped to impedance by processor The identification number of matching network 1, and the parameter of the mapping, identification number and one or more changes is stored in mainframe computer system In 112 storage arrangement.
In some embodiments, instead of or be additional to change preset parameter L1s, L1p, L2s, L2p, R1s, R1p, R2s, One or more of R2p, C1s, C1p, C2s and C2p, processor is in the operation 312 of method 600 with side same as described above Formula changes variable capacitance C11.
Fig. 7 is the schematic diagram of the embodiment of system 700, and it illustrates be connected to load impedance when impedance matching network 1 The determination of the efficiency of impedance matching network 1 during equipment N.System 700 includes network analyser 402, impedance matching network 1, load Impedance devices N and mainframe computer system 112.
Port S2 is connected to load impedance equipment N output end 702 via RF cables 408.It should be noted that impedance matching net The output end 109 of network 1 is connected to combination load equipment 704 via RF cables 108, and combination load equipment 704 includes load impedance Equipment N inductance and/or electric capacity and port S2 resistance.In some embodiments, the modulus of impedance of combination load equipment 704 Intend condition of plasma B, the impedance, the preset range of the impedance of plasma such as plasma, and plasma Concrete conditions in the establishment of a specific crime B is different from condition of plasma A.For example, the impedance presented by combination load equipment 704 is different from by combination load The impedance that equipment 410 (Fig. 4) is presented.For in another example, the predetermined model of the impedance presented by combination load equipment 704 Enclose the preset range for the impedance for not including being presented by combination load equipment 410.
When the combination variable capacitance of one or more variable condensers of impedance matching network 1 is set to value CN1, network Analyzer 402 is operated with frequency fN1.For example, network analyser 402 produce with frequency fN1 RF signals, and by RF signals from Port S1 is sent to the input 107 of impedance matching network 1 via RF cables 106.In some embodiments, impedance matching net The combination variable capacitance of one or more variable condensers of network 1 is arranged to the value different from value CN1, and network analyser 402 operate under the frequency different from frequency fN1.Impedance matching network 1 receives RF signals and makes to be connected to impedance matching net The impedance of the load (for example, RF cables 108, load impedance equipment N and port S2 etc.) of the output end 109 of network 1 is with being connected to resistance The impedance matching in the source (for example, RF cables 106 and port S1 etc.) of the input 107 of anti-matching network 1, to produce the RF of modification Signal.The RF signals of modification are supplied to combination load equipment 704.For example, the RF signals of modification are passed via load impedance equipment N It is sent to the port S2 of network analyser 402.
When the RF signals of modification are provided to combination load equipment 704, the measurement S21 of network analyser 402 parameters, S11 The power of amount P oNm of parameter and the RF signals exported in S1 ports.For example, network analyser 402 port S1 measure by via RF cables 106 are sent to the power P oNm that the RF signals of impedance matching network 1 are provided.Network analyser 402 is via network cable 404 send S11 parameters, S21 parameters and power P oNm to the processor of mainframe computer system 112.Processor computing impedance is matched The efficiency ε Nm of network 1 as S21 parameters square and 1 and S11 parameters square between poor ratio.
The ratio is expressed as
Efficiency ε Nm are the efficiency of combination load equipment 704.In some embodiments, when load impedance equipment N is designed To be lossless or when being lost with minimum power, for example, the power attenuation in load impedance equipment N is significantly less than in impedance During power attenuation in distribution network 1 etc., measurement efficiency ε Nm are carried out using equation (2).In some embodiments, in load impedance Equipment N changes the ratio in the case of having small amount of power loss.Although in some embodiments, efficiency ε Nm are with impedance Any value determination of the combination variable capacitance of distribution network 1 and the RF frequency of network analyser 402, but for S112Small value, Efficiency ε Nm are accurate, and with S112Become big, efficiency ε Nm become inaccurate.In numerous embodiments, in impedance When distribution network 1 is tuned or almost tuned, such as combination variable capacitance and network analyser 402 when impedance matching network 1 RF frequency cause S112During close to 0, efficiency ε Nm are determined.
In some embodiments, it is not load impedance equipment N, but another load impedance equipment B is connected to impedance The port S2 of matching network 1 and network analyser 402.Load impedance equipment B has the structure identical with load impedance equipment N Structure, unlike, load impedance equipment B includes one or more lossless capacitors and/or one or more lossless inductors, And do not include any resistor.For example, load impedance equipment B includes one with one or more lossless inductor series coupleds Individual or multiple lossless capacitors.One or more lossless capacitors are connected to input 111N, and one or more lossless electricity Sensor is coupled to output end 702.For in another example, load impedance equipment B includes and one or more lossless inductor strings Join one or more lossless capacitors of coupling.One or more lossless inductors are connected to input 111N, and one or Multiple lossless capacitors are connected to output end 702.
Fig. 8 be show to be performed by mainframe computer system 112 with determine preset parameter L1s, L1p, L2s, L2p, R1s, R1p, The schematic diagram of the method 800 of R2s, R2p, C1s, C1p, C2s and C2p value.Using above with reference to the matching network mould described in Fig. 5 Type 302 determines the efficiency ε 1p of prediction.In addition, matching network model 302 is initialized to radio frequency fN1, electric capacity CN1 and consolidated Determine parameter L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p.For example, user is via input unit To the processor offer value fN1 of mainframe computer system 112, CN1, L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p are to initialize matching network model 302.In the embodiment using weighted capacitance and weighted frequency, processing The parameter of matching network model 302 is changed into SfN from Sf1 and changes into ScN from Sc1 by device.For example, use value ScN without It is electric capacity CN1, and use value SfN rather than value fN1.
Processor receives the power output PoNm measured via network cable 404 from network analyser 402.In matching network Model 302 be initialized to radio frequency fN1, electric capacity CN1 and preset parameter L1s, L1p, L2s, L2p, R1s, R1p, R2s, During R2p, C1s, C1p, C2s and C2p time, processor applies input work at the input 306 of matching network model 302 Rate PiNp, and by the circuit element forward conduction input power PiNp of matching network model 302 to calculate matching network mould Prediction power output PoNp at the output end 304 of type 302.For example, when matching network model 302 include circuit element R1s, When C1s, L1s and C11 tandem compound, a certain amount of electric current transmits to determine what is consumed by resistor R1s by tandem compound Power P Rs, the power P Cs consumed by capacitor C1s, the power P Ls consumed by inductor L1s and consumed by capacitor C11 Power P C1s.Processor calculate input power PiNp, power P Rs, power P Cs, power P Ls and power P C1s orientation and, To calculate prediction power output PoNp.In some embodiments, input power PiNp is identical with power P oNm.Implement a variety of In mode, input power PiNp is randomly choosed by the processor of mainframe computer system 112.In some embodiments, use value Pi1p rather than power P iNp.In numerous embodiments, receive and input from user via the input equipment for being connected to processor Power P iNp.
Processor calculates the efficiency ε Np of the prediction of matching network model 302 as prediction power output PoNp and input work Rate PiNp ratio.Processor application process 800 with determine whether to change the parameter L1s of matching network model 302, L1p, L2s, One or more of L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p.For example, in operation 802, processor is true Whether the efficiency ε 1p predicted surely are in the efficiency ε 1m measured predetermined limits, and whether the efficiency ε Np of prediction are measuring In efficiency ε Nm predetermined limits.It is determined that prediction efficiency ε 1p in the efficiency ε 1m measured predetermined limits and predict When efficiency ε Np are in the efficiency ε Nm measured predetermined limits, processor in operation 310 allocation of parameters L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p are to matching network model 302 to make together with impedance matching network 1 With.On the other hand, it is determined that prediction efficiency ε 1p not in the efficiency ε 1m measured predetermined limits or prediction efficiency ε Np When not in the efficiency ε Nm measured predetermined limits, processor change in operation 312 parameter L1s, L1p, L2s, L2p, R1s, One or more of R1p, R2s, R2p, C1s, C1p, C2s and C2p, to produce the parameter of one or more changes.
Processor repeats 802 to be determined to be directed to according to the efficiency ε 1m measured using the parameter of one or more changes Whether the efficiency ε 1p of the prediction of the parameter of change are determined for change in predetermined limits, and according to the efficiency ε Nm measured Whether the efficiency ε Np of the prediction of parameter are in predetermined limits.By this way, processor repeats 802, until basis is measured Efficiency ε 1m, the efficiency ε 1p of prediction are in predetermined limits, and according to the efficiency ε Nm measured, for the parameter of change The efficiency ε Np of prediction are in predetermined limits, are changed accordingly for the one or more of matching network model 302 with finding One or more values of parameter.Then one or more values of one or more parameters changed accordingly are distributed into pair net Network model 302.For example, the parameter of one or more changes is mapped to the identification number of impedance matching network 1 by processor, and should The parameter of mapping, identification number and one or more changes is stored in the storage arrangement of mainframe computer system 112.
In some embodiments, instead of or be additional to change preset parameter L1s, L1p, L2s, L2p, R1s, R1p, One or more of R2s, R2p, C1s, C1p, C2s and C2p, processor is in the operation 312 of method 800 with same as described above Mode change electric capacity C11.
In numerous embodiments, it is determined that prediction efficiency ε 1p not in the efficiency ε 1m measured predetermined limits, and And prediction efficiency ε Np not in the efficiency ε Nm measured predetermined limits when, processor operation 312 in change preset parameter One or more of L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p, to produce one or many The parameter of individual change.
Fig. 9 is to determine ginseng using impedance Z i1p, Zi1m, ZiNp, ZiNm, efficiency ε 1m and ε 1p and efficiency ε Nm and ε Np The flow of the embodiment of number L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p method 900 Figure.Method 900 by mainframe computer system 112 computing device.In the operation 902 of method 900, prediction is determined by processor Input impedance Zi1p whether in input impedance Zi1m preset range, prediction input impedance ZiNp whether in input impedance In ZiNm preset range, according to the efficiency ε 1m measured, whether the efficiency ε 1p of prediction are in predetermined limits and according to measuring Efficiency ε Nm, whether the efficiency ε Np of prediction in predetermined limits.
It is determined that prediction input impedance Zi1p in input impedance Zi1m preset range, prediction input impedance ZiNp In input impedance ZiNm preset range, according to the efficiency ε 1m measured, the efficiency ε 1p of prediction are in predetermined limits, Yi Jigen According to the efficiency ε Nm measured, when the efficiency ε Np of prediction are in predetermined limits, 310 are operated by computing device.On the other hand, exist It is determined that the input impedance Zi1p of prediction is not in input impedance Zi1m preset range, or the input impedance ZiNp of prediction does not exist In input impedance ZiNm preset range, or according to the efficiency ε 1m measured, the efficiency ε 1p of prediction not in predetermined limits, or Person is according to the efficiency ε Nm measured, when the efficiency ε Np of prediction are not in predetermined limits, computing device operation 312.
In some embodiments, it is determined that the input impedance Zi1p of prediction is not in input impedance Zi1m preset range It is interior, or prediction input impedance ZiNp not in input impedance ZiNm preset range, or according to the efficiency ε 1m measured, in advance The efficiency ε 1p of survey are not in predetermined limits, or according to the efficiency ε Nm measured, the efficiency ε Np of prediction not in predetermined limits, Or it is therein both or more the combination of person when, computing device operation 312.For example, it is determined that prediction input impedance Zi1p Not in input impedance Zi1m preset range, prediction input impedance ZiNp not in input impedance ZiNm preset range, According to the efficiency ε 1m measured, the efficiency ε 1p of prediction are not in predetermined limits and according to the efficiency ε Nm measured, the effect of prediction When rate ε Np are not in predetermined limits, computing device operation 312.For in another example, it is determined that prediction input impedance ZiNp Not in input impedance ZiNm preset range, and according to the efficiency ε Nm measured, the efficiency ε Np of prediction are not in predetermined limits When interior, computing device operation 312.
Processor repeats 902 using the parameter of one or more changes, is with the input impedance Zi1p for determining prediction It is no in input impedance Zi1m preset range, prediction input impedance ZiNp whether input impedance ZiNm preset range The efficiency ε 1m that interior, basis is measured, whether the efficiency ε 1p of prediction are in predetermined limits and according to the efficiency ε Nm measured, prediction Efficiency ε Np whether in predetermined limits.By this way, processor repeats 902, until the input impedance of the prediction Zi1p in input impedance Zi1m preset range, prediction input impedance ZiNp in input impedance ZiNm preset range, According to the efficiency ε 1m measured, the efficiency ε 1p of prediction are in predetermined limits and according to the efficiency ε Nm measured, the efficiency ε of prediction Np is in predetermined limits, with the one or more of the parameter of corresponding one or more changes for finding matching network model 302 Value.Then the value of the parameter of one or more changes is distributed into matching network model 302.For example, processor is by one or many The parameter of individual change is mapped to the identification number of impedance matching network 1, and stores the mapping, the parameter of one or more changes And the identification number is into the storage arrangement of mainframe computer system 112.
In some embodiments, instead of or be additional to change preset parameter L1s, L1p, L2s, L2p, R1s, R1p, R2s, One or more of R2p, C1s, C1p, C2s and C2p, processor is in the operation 312 of method 900 with side same as described above Formula changes electric capacity C11.
Figure 10 is the schematic diagram of the embodiment of plasma system 1000, and it is to illustrate that matching network model 302 exists Use in plasma system 1000.Plasma system 1000 include RF generators 1002, impedance matching network 1, etc. from Daughter room 1004 and mainframe computer system 112.RF generators 1002 are x MHz RF generators or y MHz RF generators or z MHz RF generators.RF generators 1002 are operated with frequency fRF1.Plasma chamber 1004 is connected to via RF transmission lines 1006 The output end 109 of impedance matching network 1, and the branch circuit of impedance matching network 1 input 107 via RF cables 1008 It is connected to RF generators 1002.
RF generators 1002 include RF power sources 1010 and sensor 1012, and sensor 1012 is for example, complex voltage and electric current Sensor, complex impedance sensor, telegram in reply pressure sensor, telegram in reply flow sensor etc..Sensor 1012 is via the quilt of network cable 1014 Mainframe computer system 112, network cable 1014 are connected to for example, serial transmission cable, parallel transmission cable, USB cable etc..Pass The example of sensor 1012 includes voltage sensor, current sensor, impedance transducer, complex voltage and current sensor, power and passed Sensor etc..Mainframe computer system 112 includes processor 1016 and storage device 1018, the storage matching network mould of storage device 1018 The device 1016 for processing of type 302 is accessed.
Plasma chamber 1004 includes Top electrode 1020, chuck 1022 and wafer W.Top electrode 1020 towards chuck 1022 simultaneously Ground connection, for example, being coupled to reference voltage, being coupled to no-voltage, be coupled to negative voltage etc..The example of chuck 1022 includes electrostatic card Disk (ESC) and magnetic chuck.The bottom electrode of chuck 1022 is made up of metal (for example, anodised aluminium, aluminium alloy, etc.).In addition, Top electrode 1020 is made up of metal (for example, aluminium, aluminium alloy, etc.).Top electrode 1020 is located at the bottom electrode opposite side of chuck 1022 And towards the bottom electrode of chuck 1022.
In some embodiments, plasma chamber 1004 is formed using additional part, and additional part is for example, surround The Top electrode extension of Top electrode 1020, around chuck 1022 bottom electrode bottom electrode extension, Top electrode 1020 and on Dielectric collar between electrode extension, the dielectric collar between bottom electrode and bottom electrode extension, positioned at Top electrode 1020 and card The edge of disk 1022 with surround in plasma chamber 1004 wherein formed plasma region confinement ring, etc..
Wafer W is placed on the top surface 1024 of chuck 1022 and handled, for example, deposition materials on the wafer W, or Wafer W, or the layer of etching deposit on the wafer W are cleaned, or gives wafer W doping, or injects ion on the wafer W, or in wafer W Upper generation photoengraving pattern, or etching wafer W, or sputtering wafer W, or more combination.
The processor 1016 of mainframe computer system 112 accesses formula from the storage arrangement 1018 of mainframe computer system 112 (for example, treating the frequency fRF1 of RF signals produced by RF generators 1002, treat the work(of RF signals produced by RF generators 1002 Rate amount, etc.), and the formula is provided to RF generators 1002 via network cable 1026.
The formula also includes the combination variable capacitance to be realized of impedance matching network 1.Processor is connected to drive component 1040, drive component 1040 is connected to one or more variable condensers of impedance matching network 1 via bindiny mechanism 1042.Drive The example of dynamic device assembly 1040 includes the one or more drivers for being connected to corresponding one or more motors, for example, one Or multiple transistors etc..One or more of motors are connected to corresponding one or more bars of bindiny mechanism 1042.Place Reason device 1016 controls drive component 1040 to control one or more of impedance matching network 1 can via bindiny mechanism 1042 Variodenser, so as to realize corresponding one or more capacitances, variable capacitance is combined with further realize.For example, processor 1016 one sent signal in the one or more drivers of one being connected in one or more of motors. When receiving signal, driver produces the current signal for the stator for being provided to motor.The rotor that is connected with stator rotate with Make the one or more bars rotation of bindiny mechanism 1042 for being connected to rotor.The rotation of one or more bars changes impedance matching The position of the plate of one in one or more of network 1 variable condenser, it is variable with the combination for changing impedance matching network 1 Electric capacity.Similarly, other variable condensers in one or more variable condensers of impedance matching network 1 are by processor 1016 Control to realize the variable capacitance of combination.The combination capacitor quilt to be achieved of all variable condensers of impedance matching network 1 It is expressed as combination variable capacitance C11.
RF generators 1002, which are received, is formulated and produces frequency fRF1 and the RF signals of power with formula.With group Close output end 1030 of the branch circuit via impedance matching network 1, the RF cables of variable capacitance C11 impedance matching network 1 1008 and input 107 from RF generators 1002 receive with frequency fRF1 RF signals and make to be connected to impedance matching network 1 Output end 109 load impedance and be connected to impedance matching network 1 input 107 source matches impedances, with produce The RF signals of raw modification.RF generators 1002 comprising RF generators 1002 and are coupled to impedance matching network 1 by the embodiment in source RF cables 1008.The example of load includes RF transmission lines 1006 and plasma chamber 1004.RF transmission lines 1006 are by chuck 1022 bottom electrode is connected to impedance matching network 1.The RF signals of modification are via output end 109 and RF transmission lines 1006 by impedance Matching network 1 is supplied to chuck 1022.
Chuck 1022 receives the RF signals of modification and when process gas enters plasma chamber 1004, in plasma chamber Plasma is encouraged in 1004 or plasma is maintained.The embodiment of process gas includes oxygen-containing gas or fluoro-gas etc., Process gas is provided in the gap between Top electrode 1020 and chuck 1022.Plasma is used to handle wafer W.
Matching network model 302 is stored in the storage device 1018 of mainframe computer system 112.In addition, storage device 1018 data storage storehouses 1028, database 1028 comprising the mark of impedance matching network 1, the parameter value of matching network model 302, Pass between the frequency fRF1 of the RF signals produced by RF generators 1002 and the combination variable capacitance C11 of impedance matching network 1 Connection.For example, database 1028 stores the identification number (for example, ID1 etc.) of impedance matching network 1, and ID1 and application method 303 The fixed ginseng that (Fig. 3) or method 500 (Fig. 5) or method 600 (Fig. 6) or method 800 (Fig. 8) or method 900 (Fig. 9) are determined Between the parameter of number L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p or one or more change Mapping.The embodiment of the mark of impedance matching network includes the sequence number of impedance matching network.In addition, in the present embodiment, Storage device 1018 stores the ID2 of another impedance matching network 2, and reflecting between the parameter of ID2 and impedance matching network 2 Penetrate.The parameter of impedance matching network 2 with above-mentioned use Fig. 3, Fig. 5, Fig. 6, Fig. 8 or Fig. 9 to determine impedance matching network 1 The mode similar mode of parameter is determined.
In certain embodiments, the preset parameter of impedance matching network 2 is identical with the preset parameter of impedance matching network 1. For example, the preset parameter of impedance matching network 2 be L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p or the parameter of one or more changes.
In numerous embodiments, the parameter of impedance matching network 2 is identical with the parameter of impedance matching network 1.For example, resistance The parameter of anti-matching network 2 is L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s, C2p and C11, or one The parameter of individual or multiple changes.
Impedance matching network 1 is allocated the sequence numbers different from distributing to the sequence number of impedance matching network 2, two impedances Matching network 1 and 2 has identical model.In some embodiments, sequence number is on the shell of impedance matching network, and Model is also such.In numerous embodiments, identification number includes letter, numeral, symbol or two or more letters, numeral With the combination of symbol.
The processor 1016 of mainframe computer system 112 is received via the input unit for being connected to mainframe computer system 112 Instruction from user, wherein RF generators 1002 be connected to the impedance matching network 1 with ID1, the input unit for example, Stylus, touch pad, touch-screen, button, mouse etc..Processor 1016 recognizes the ID1 of impedance matching network 1 from storage device 1018 With parameter L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p of matching network model 302 or one The parameter of individual or multiple changes is associated.Processor 1016 access from storage device 1018 the parameter L1s such as (for example, read), L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p, and the parameter of matching network model 302 is adjusted, with With value L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and the C2p associated with impedance matching network 1 Or with the parameter with one or more changes.
Sensor 1012 is connected to output end 1030 to measure the variable at output end 1030.For example, sensor 1012 Measure output end 1030 at the amount of impedance or the complex voltage and electric current of the RF signals provided by RF generators 1002 or The complex voltage and electric current of the RF signals conveyed by RF generators 1002.In some embodiments, conveyed by RF generators 1002 RF signals be by RF generators 1002 to provide the RF signals of impedance matching network 1 and via impedance via RF cables 1008 Difference between the RF signals that distribution network 1 is reflected from plasma chamber 1004 towards RF generators 1002.
When the variable (for example, complex voltage, telegram in reply stream, complex impedance, complex power, complex voltage and electric current etc.) measured is by processor 1016 via network cable 1014 from sensor 1012 receive when, processor 1016 applies measured variable to matching network mould At the input 306 of type 302, it is initialized to have the one or more parameters or with ID1 associated associated with ID1 One or more changes parameter, to produce the variable in the prediction of the output end 304 of matching network model 302.Measure Variable by processor 1016 via matching network model 302 from the forward conduction of input 306 to output end 304, with pair net The output end 304 of network model 302 produces output variable.For example, processor 416 calculate following complex voltages orientation and： Complex voltage that the input 306 of distribution network model 302 is received, across the electricity with resistance R1s in matching network model 302 The complex voltage of resistance element, across the complex voltage of the inductance element with inductance L1s in matching network model 302, across tool There is the complex voltage of fixed capacity C1s capacity cell, across the resistive element with resistance R2s in matching network model 302 Complex voltage, across the complex voltage of the inductance element with inductance L2s in matching network model 302, across with fixed electricity Hold the complex voltage of C2s capacity cell and across the capacity cell with variable capacitance C11 in matching network model 302 Complex voltage.
It should be noted that matching network model 302 input receive complex voltage, across in matching network model The complex voltage of the resistive element with resistance R1s in 302, across the electricity with inductance L1s in matching network model 302 The complex voltage of sensing unit, across the complex voltage of the capacity cell with fixed capacity C1s, across in matching network model 302 The complex voltage of resistive element with resistance R2s, across the inductance element with inductance L2s in matching network model 302 Complex voltage, across the capacity cell with fixed capacity C2s complex voltage and can across having in matching network model 302 Become the complex voltage of electric capacity C11 capacity cell, it is multiple to be produced in the output end 304 of matching network model 302 with frequency fRF1 Numerical value.In this embodiment, matching network model 302 does not include except resistor R1s, inductor L1s, capacitor C1s, resistance Any other circuit element outside device R2s, inductor L2s, capacitor C2s and capacitor C11, resistor R1s, inductor L1s, capacitor C1s, resistor R2s, inductor L2s, capacitor C2s and capacitor C11 are serially connected.In matching network The complex voltage that the input 306 of model 302 is received is surveyed by the sensor 1012 for being connected to the output end 1030 of RF generators 1002 Amount, and received by processor 1016 from sensor 1012.Therefore, do not have between impedance matching network 1 and plasma chamber 1004 It is necessary using sensor (for example, voltage sensor, current sensor, complex impedance sensor, complex voltage and current sensor Deng) determine the value in the variable of the output end 109 of impedance matching network 1.It is very expensive using these sensors.Compare and Speech, sensor 1012 has been a part for RF generators 1002, and can used.
In some embodiments, fixed value L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p is applied to all impedance matching networks of same model.For example, working as with different sequence numbers but with identical model When impedance matching network 1012 is continuously attached to the output end 1030 of RF generators 1002, fixed value L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p are by the application of processor 1016 with according to the parameter obtained from sensor 1012 Value calculate matching network model 302 output end 304 variable.For in another example, parameter (such as preset parameter L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p etc.) it is applied to impedance matching network 1 and 2 liang Person.This replacing impedance matching network 1 with impedance matching network 2 or replaces the time of impedance matching network 2 with impedance matching network 1 Save the time of initialization matching network model 302.
It should be noted that in some embodiments, parameter L1s, L1p, L2s, L2p, R1s, R1p, R2s, R2p, C1s, C1p, C2s and C2p are fixed during the processing of wafer W, such as without using drive component 1040 and bindiny mechanism 1042 To change.
Figure 11 is the block diagram of an embodiment of matching network model 302.Include resistor R1s, inductor L1s, electricity Container C1s series circuit be connected to comprising resistor R1p, inductor L1p, capacitor C1p parallel circuit.In addition, bag R2s containing resistor, inductor L2s, capacitor C2s series circuit are connected to comprising resistor R2p, inductor L2p, electric capacity Device C2p parallel circuit.In addition, the series circuit comprising resistor R3s, inductor L3s, capacitor C3s is connected to and included Resistor R3p, inductance L3p, capacitor C3p parallel circuit.
It should be noted that in some above-mentioned embodiments, RF signals are fed into the bottom electrode of chuck 1022, and Top electrode 1020 is grounded.In numerous embodiments, RF signals 1012 are fed into Top electrode 1020, the bottom electrode of chuck 1022 Ground connection.
The embodiment that the present invention is described can be with comprising hand-held hardware cell, microprocessor system, based on microprocessor The various computer system configurations of device or programmable consumption electronic product, minicom, mainframe computer etc. are implemented. Embodiment described in the invention can also be performed by the remote processing hardware unit linked by computer network wherein Implement in the DCE of task.
In some embodiments, controller is a part for system, and the system can be the part of above-described embodiment. This system includes semiconductor processing equipment, and the semiconductor processing equipment includes one or more handling implements, one or more Process chamber, one or more platforms for processing and/or specific processing assembly (wafer base, air flow system etc.).This is System can be with the electronic device one for controlling their operations before and after, during processing semiconductor wafer or substrate Change.Electronic device is referred to as " controller ", and the controller can be with the various elements or subassembly of control system.According to processing requirement And/or the type of system, controller is programmed to control any technique disclosed by the invention, comprising the conveying of control process gas, Temperature setting (for example, heating and/or cooling), pressure setting, vacuum setting, power setting, the setting of RF generators, RF matching electricity Road setting, set of frequency, flow velocity setting, fluid conveying setting, position and operation setting, chip are transferred into out instrument and other turns Shifting instrument and/or the load lock for being connected or being connected by interface with specific system.
More broadly, in numerous embodiments, controller is defined as receiving instruction, issue instruction, control operation, enabled Clean operation, the electronic device with various integrated circuits, logic, memory and/or software for enabling end points measurement etc..Collection Into the chip of form of firmware of the circuit comprising storage program instruction, digital signal processor (DSP), it is defined as application specific integrated circuit (ASIC) microcontroller of chip, one or more microprocessors or execute program instructions (for example, software).Programmed instruction is The instruction of controller is sent in the form of (or program file) with various be separately provided, the setting (or program file), which is defined, to be used for The operating parameter of particular procedure is performed on the semiconductor wafer or for semiconductor wafer.In some embodiments, operation ginseng Number is being used for of defining to prepare one or more (kind) layers of chip, material, metal, oxide, silicon, two by process engineer A part for the formula of one or more process steps is completed during silica, surface, circuit and/or tube core.
In some embodiments, controller be with the system integration, couple in other words by network connection system or it Combination computer a part or coupled with the computer.For example, controller in " cloud " either chip factory (fab) host computer system all or part of, so as to allow remote access chip processing.Controller is enabled to the remote of system Journey accesses to monitor the current process of manufacturing operation, checks the history of past manufacturing operation, checks becoming for multiple manufacturing operations Gesture or performance standard, to change currently processed parameter, current processing are followed to set process step or is started new Technique.
In some embodiments, remote computer (for example, server) provides a system to technique by computer network Formula, computer network includes local network or internet.Remote computer, which is included, allows input or program parameters and/or setting User interface, the parameter and/or set then be transferred to system from remote computer.In certain embodiments, controller connects Receive the instruction for being used to handle chip of setting form.It should be appreciated that set for the technology type that will be performed on chip with And tool types, controller connects or controls the tool types.Therefore, as described above, controller for example by comprising one or Multiple discrete controllers and be distributed, these discrete controllers are by network connection together and towards common target (for example, as described herein realize technique) works.The embodiment of distributed director for these purposes include with one or One or many on the room of multiple remote integrated circuit (for example, in plateau levels or part as remote computer) communications Individual integrated circuit, they combine to control chamber processes.
In numerous embodiments, system is including but not limited to plasma etch chamber, settling chamber, rotary-cleaning room, gold Belong to electroplating chamber, clean room, Chamfer Edge etching chamber, physical vapour deposition (PVD) (PVD) room, chemical vapor deposition (CVD) room, atomic layer Deposit (ALD) room, atomic layer etch (ALE) room, ion implantation chamber, track chamber and the preparation in semiconductor wafer and/or system Make middle association or any other semiconductor processing system used.
It should further be noted that, although above-mentioned operation with reference to parallel-plate plasma room (for example, Capacitance Coupled etc. from Seed cell etc.) it is described, but in some embodiments, aforesaid operations are applied to other kinds of plasma chamber, for example, bag Plasma chamber containing inductively coupled plasma (ICP) reactor, transformer coupled plasma (TCP) reactor, conductor Instrument, dielectric instrument, the plasma chamber for including electron cyclotron resonace (ECR) reactor, etc..For example, x MHz RF are produced Device, y MHz RF generators and z MHz RF generators are coupled to the inductor in ICP plasmas room.The shape of inductor Example include solenoid, dome-shaped coil, flatwise coil etc..
As described above, the one or more technological operations that will be performed according to instrument, controller with it is one or more other Instrument circuit or model, other tool assemblies, combination tool, other tools interfaces, adjacent instrument, adjacent instrument, be located at Instrument, main frame, another controller in whole factory or it is to and from by the container of chip in semiconductor fabrication factory The instrument communications used in the materials handling that tool location and/or load port are carried.
In view of above-mentioned embodiment, it should be understood that some embodiments, which use to be related to, is stored in computer system In data various computer implemented operations.These computer implemented operations are the operations that those manipulate physical quantity.
Some embodiments further relate to the hardware cell or device for performing these operations.The device is directed to dedicated computing Mechanism into.When being defined as special-purpose computer, the computer performs other processing, meanwhile, it is not belonging to the journey of private part Sequence is performed or routine still be able to be operable for it is special.
In some embodiments, the operation that the present invention is described is performed by the computer optionally activated, by storing Obtained in the configuration of one or more of computer storage computer program, or by computer network.When by calculating Machine network obtains data, and the data can be by other computer disposals on computer network (for example, cloud computing resources).
One or more embodiments described in the invention can also be fabricated in non-transitory computer-readable medium On computer-readable code.Non-transitory computer-readable medium is any data hardware equipment of data storage (for example, depositing Reservoir device etc.), read by computer system after these data.The example of computer-readable medium comprising hard disk drive, Network attached storage (NAS), ROM, RAM, compact disc read-only memory (CD-ROM), compact disc recordable (CD-R), rewritable CD (CD-RW), tape and other optics and non-optical data storage hardware equipment.In some embodiments, non-transitory meter Calculation machine computer-readable recording medium includes the computer-readable tangible medium in the computer system for being distributed in and being coupled with network so that computer Readable code is stored and performed in a distributed fashion.
Although certain methods operation as described above is presented in a particular order, it should be appreciated that in different implementation In mode, other regular jobs are performed between method operation, or method operation is adjusted so that they occur somewhat not The same time, or being distributed in allows the method in different time intervals to operate in the system occurred, or with unlike those described above Order is performed.
It is also to be noted that in one embodiment, not departing from the various embodiment party described by present disclosure In the case of scope described in formula, one or more features and any other embodiment party from above-mentioned any embodiment One or more combinations of features of formula.
Although for the purpose clearly understood, above-mentioned embodiment is described in detail to a certain extent, show and It is clear to, some changes and modifications schemes can be put into practice within the scope of the appended claims.Therefore, embodiments of the present invention should It is considered as illustrative and not restrictive, and these embodiments are not limited to details given herein, but can be with Modified in scope of the following claims and equivalent.

Claims (10)

1. a kind of method for being used to determine the preset parameter of matching network model, it includes：
Measure the efficiency of impedance matching network；
When matching network model is allocated fixed inductance, fixed capacity and fixed resistance, in the input of matching network model Place applies input power to calculate the prediction power output of the output of the matching network model；
The efficiency of the prediction of the impedance matching model is calculated according to the prediction power output and the input power；
Whether the efficiency according to measuring determines the efficiency of the prediction in predetermined limits；And
After the efficiency that measures according to determines the efficiency of the prediction in predetermined limits, by the fixed inductance, institute State fixed capacity and the fixed resistance distributes to the matching network model.
2. according to the method described in claim 1, wherein when the impedance matching network is connected to network analyser and load resistance The efficiency measured during anti-equipment described in measurement, wherein the network analyser has input port and output port, wherein described The combined impedance of the input port of load impedance equipment and the network analyser represents condition of plasma.
3. according to the method described in claim 1, it is additionally included in the efficiency that the efficiency measured according to determines the prediction When not in predetermined limits, change the fixed inductance or the fixed capacity or the fixed resistance or it is therein both Or more person combination.
4. according to the method described in claim 1, wherein when the first port of network analyser is connected to the impedance matching net The efficiency measured during the input of network described in measurement, methods described also includes：
When the second port of the network analyser is connected to the output end of equipment and when the equipment is connected to the impedance During the output end of match circuit, S21 parameters are received from the network analyser；
Calculate S21 parameters square with 1 and S11 parameters square between poor ratio, with the efficiency measured described in determining.
5. according to the method described in claim 1, wherein be controlled as can with predetermined combination when the impedance matching network When becoming electric capacity and network analyser and being operated under predetermined radio frequency, calculate described in the efficiency that measures, wherein the network analysis Device is connected to the input of the impedance matching network.
6. according to the method described in claim 1, it also includes：
Make the fixed inductance or the fixed capacity or the fixed resistance or in them both or more person combination It is associated with the characteristic of the impedance matching network；
Stored in storage arrangement the fixed inductance or the fixed capacity or the fixed resistance or in them two The association between the combination of person or more person and the characteristic；
Receive the characteristic of the impedance matching network；And
When receiving the characteristic, the matching network model is initialized with the fixed inductance or the fixed electricity Hold or the fixed resistance or in them both or more person combination.
7. according to the method described in claim 1, wherein when network analyser is connected to the input of the impedance matching network And when the output end of the impedance matching network is connected to load equipment, the efficiency measured described in measurement.
8. according to the method described in claim 1, wherein when the matching network model is initialized to combination capacitor value During with radio frequency (RF), the power output for applying in the input of matching network model and measuring is performed.
9. a kind of system for being used to determine the preset parameter of matching network model, it is included：
Processor, it is configured as receiving input power,
Wherein described processor be configured as matching network model be allocated fixed inductance, fixed capacity and during fixed resistance The input end of the matching network model applies the input power to calculate the output in the matching network model Prediction power output,
Wherein described processor is configured as calculating the impedance matching according to the prediction power output and the input power The efficiency of the prediction of model,
Wherein described processor is configured as determining whether the efficiency of the prediction is in predetermined limits according to the efficiency measured, And
Wherein described processor is configured as determining the efficiency of the prediction in the pre- fixed limit in the efficiency measured according to After in degree, the fixed inductance, the fixed capacity and the fixed resistance are distributed into the matching network model；With
The storage arrangement of the processor is coupled to, wherein the storage arrangement is configured as storing the matching network mould Type.
10. a kind of system for being used to determine the preset parameter of matching network model, it includes：
Radio frequency (RF) generator, it is configured as producing RF signals；
Impedance matching network, it has the input for being coupled to the RF generators；
Plasma chamber, it is coupled to the output end of the impedance matching network；
The mainframe computer system of the RF generators is coupled to, wherein the mainframe computer system includes processor and memory device Put, wherein the storage arrangement is coupled to the processor,
Wherein described processor is configured as receiving input power,
Wherein described processor be configured as matching network model be allocated fixed inductance, fixed capacity and during fixed resistance The input end of the matching network model applies the input power to calculate the output of the matching network model Predict power output,
Wherein described processor is configured as calculating the impedance matching according to the prediction power output and the input power The efficiency of the prediction of model,
Wherein described processor is configured as determining whether the efficiency of the prediction is in predetermined limits according to the efficiency measured, And
Wherein described processor is configured as determining the efficiency of the prediction in the pre- fixed limit in the efficiency measured according to After in degree, the fixed inductance, the fixed capacity and the fixed resistance are distributed into the matching network model,
Wherein described storage arrangement is configured as storing the matching network model.
CN201710124652.XA 2016-03-03 2017-03-03 System and method for determining parameters of a matching network model using equipment and efficiency Active CN107153722B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15/059,778 2016-03-03
US15/059,778 US9831071B2 (en) 2013-05-09 2016-03-03 Systems and methods for using multiple inductive and capacitive fixtures for applying a variety of plasma conditions to determine a match network model
US15/145,601 US9837252B2 (en) 2013-05-09 2016-05-03 Systems and methods for using one or more fixtures and efficiency to determine parameters of a match network model
US15/145,601 2016-05-03

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