CN107151545A - A kind of Thin Film Transistor-LCD good packaging silicon rubber of high heat conduction cementability - Google Patents
A kind of Thin Film Transistor-LCD good packaging silicon rubber of high heat conduction cementability Download PDFInfo
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- CN107151545A CN107151545A CN201710354615.8A CN201710354615A CN107151545A CN 107151545 A CN107151545 A CN 107151545A CN 201710354615 A CN201710354615 A CN 201710354615A CN 107151545 A CN107151545 A CN 107151545A
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- silicon rubber
- thin film
- film transistor
- cementability
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/011—Nanostructured additives
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
- C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
- C08L2205/035—Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend
Abstract
The invention discloses a kind of Thin Film Transistor-LCD good packaging silicon rubber of high heat conduction cementability, it is made up of the raw material of following parts by weight：22 30 parts of methylvinyl-polysiloxane resin, 18 25 parts of vinylite, 11 16 parts of methyl vinyl silicon oil, 16 30 parts of vinyl polysiloxane, 7 15 parts of 5 20 part, nanometer quartz of divinyl tetramethyl disiloxane, 38 parts of catalyst, 46 parts of silane coupler, 25 parts of bonding agent.The present invention can significantly improve the heat conductivility of packaging plastic by nanometer silica flour, and obtained packaging silicon rubber is tested through thermal conductivity tester, and its thermal conductivity can improve 9 22%；Organic solvent is not needed in the packaging silicon rubber processing procedure prepared using the present invention, medium is used as using vinyl silicone oil, silane coupler is set to produce the result that chemical reaction reaches surface treatment with nanometer quartz in kneading process, a nanometer quartz can be enable to be dispersed in well in vinyl silicone oil, it is prepared into the convenient follow-up addition of base rubber, it is to avoid the secondary addition of nano particle.
Description
Technical field
The present invention relates to LCD Technology field, and in particular to a kind of Thin Film Transistor-LCD high heat conduction
The good packaging silicon rubber of cementability.
Background technology
The rise of Thin Film Transistor-LCD industry, new hope is brought to energy-saving and emission-reduction, energy environment protection, is showed
Extremely wide application prospect is gone out.With developing rapidly for Thin Film Transistor-LCD industry especially Lighting Industry,
Thin Film Transistor-LCD progressively develops to high-power direction, thus encapsulating material is proposed it is more more fully will
Ask.
Traditional Thin Film Transistor-LCD heat-removal modalities are that heat is passed to away into drop by the aluminium base at back
Low operating temperature, the shortcoming of this method is, because the thermal conductivity factor of organic silicon packaging glue is relatively low, so can not effectively reduce
The temperature on packaging plastic surface, without the heat dissipation problem for fundamentally solving packaging plastic.
The content of the invention
The present invention is intended to provide a kind of Thin Film Transistor-LCD good packaging silicon rubber of high heat conduction cementability.
The present invention provides following technical scheme：
A kind of Thin Film Transistor-LCD good packaging silicon rubber of high heat conduction cementability, it is by following parts by weight
Raw material composition：22-30 parts of methylvinyl-polysiloxane resin, 18-25 parts of vinylite, methyl vinyl silicon oil 11-
16 parts, 16-30 parts of vinyl polysiloxane, 5-20 parts of divinyl tetramethyl disiloxane, 7-15 parts of nanometer quartz, catalysis
3-8 parts of agent, 4-6 parts of silane coupler, 2-5 parts of bonding agent.
A kind of Thin Film Transistor-LCD good packaging silicon rubber of high heat conduction cementability, its preparation method is by methyl
Vinyl polysiloxane resin, vinylite, methyl vinyl silicon oil, vinyl polysiloxane, divinyl tetramethyl two
Siloxanes is sequentially added in double-planet high speed dispersor, is sufficiently stirred for 2-3h, is well mixed, then add and receive into said mixture
Rice quartz, catalyst, silane coupler, bonding agent, the vacuum in the case where 140-150 DEG C of temperature, rotating speed is 30-50r/min are pinched
3-4h is mediated in conjunction machine, room temperature is subsequently cooled to.
The methyl vinyl silicon oil is that end ethene silicon oil viscosity is 2200-4000mpa.s.
The catalyst is one kind in chloroplatinic acid in alcohol, platinum-methyl phenyl silicone, platinum-olefin complex.
The silane coupler is γ-glycidoxypropyltrime,hoxysilane, vinyltrimethoxy silane, ethene
Any of ethyl triethoxy silicane alkane.
The bonding agent is the coupling agent containing epoxy-functional, and its structural formula is as follows：
Compared with prior art, the beneficial effects of the invention are as follows：The present invention can be bright by the high thermal conductivity of nanometer silica flour
The heat conductivility of aobvious raising packaging plastic, obtained packaging silicon rubber is tested its thermal conductivity through thermal conductivity tester, and it is led
Heating rate can improve 9-22%；Organic solvent is not needed in the packaging silicon rubber processing procedure prepared using the present invention, using ethene
Base silicone oil makes silane coupler produce chemical reaction with nanometer quartz in kneading process and reaches surface treatment as medium
As a result, while a nanometer quartz can be enable to be dispersed in well in vinyl silicone oil, it is prepared into the convenient follow-up addition of base rubber, it is to avoid
The secondary addition of nano particle.
Embodiment
Below in conjunction with the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described,
Obviously, described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based in the present invention
Embodiment, the every other embodiment that those of ordinary skill in the art are obtained under the premise of creative work is not made, all
Belong to the scope of protection of the invention.
A kind of Thin Film Transistor-LCD of the embodiment 1 good packaging silicon rubber of high heat conduction cementability, it is by as follows
The raw material composition of parts by weight：22 parts of methylvinyl-polysiloxane resin, 18 parts of vinylite, methyl vinyl silicon oil 11
Part, 16 parts of vinyl polysiloxane, 7 parts of 5 part, nanometer quartz of divinyl tetramethyl disiloxane, 3 parts of catalyst, silane
4 parts of coupling agent, 2 parts of bonding agent.
A kind of Thin Film Transistor-LCD good packaging silicon rubber of high heat conduction cementability, its preparation method is by methyl
Vinyl polysiloxane resin, vinylite, methyl vinyl silicon oil, vinyl polysiloxane, divinyl tetramethyl two
Siloxanes is sequentially added in double-planet high speed dispersor, is sufficiently stirred for 2-3h, is well mixed, then add and receive into said mixture
Rice quartz, catalyst, silane coupler, bonding agent, the vacuum in the case where 140-150 DEG C of temperature, rotating speed is 30-50r/min are pinched
3-4h is mediated in conjunction machine, room temperature is subsequently cooled to.
The methyl vinyl silicon oil is that end ethene silicon oil viscosity is 2200-4000mpa.s.
The catalyst is one kind in chloroplatinic acid in alcohol, platinum-methyl phenyl silicone, platinum-olefin complex.
The silane coupler is γ-glycidoxypropyltrime,hoxysilane, vinyltrimethoxy silane, ethene
Any of ethyl triethoxy silicane alkane.
The bonding agent is the coupling agent containing epoxy-functional, and its structural formula is as follows：
A kind of Thin Film Transistor-LCD of the embodiment 2 good packaging silicon rubber of high heat conduction cementability, it is by as follows
The raw material composition of parts by weight：30 parts of methylvinyl-polysiloxane resin, 25 parts of vinylite, methyl vinyl silicon oil 16
Part, 30 parts of vinyl polysiloxane, 15 parts of 20 part, nanometer quartz of divinyl tetramethyl disiloxane, 8 parts of catalyst, silicon
6 parts of alkane coupling agent, 5 parts of bonding agent.
A kind of Thin Film Transistor-LCD good packaging silicon rubber of high heat conduction cementability, its preparation method is by methyl
Vinyl polysiloxane resin, vinylite, methyl vinyl silicon oil, vinyl polysiloxane, divinyl tetramethyl two
Siloxanes is sequentially added in double-planet high speed dispersor, is sufficiently stirred for 2-3h, is well mixed, then add and receive into said mixture
Rice quartz, catalyst, silane coupler, bonding agent, the vacuum in the case where 140-150 DEG C of temperature, rotating speed is 30-50r/min are pinched
3-4h is mediated in conjunction machine, room temperature is subsequently cooled to.
The methyl vinyl silicon oil is that end ethene silicon oil viscosity is 2200-4000mpa.s.
The catalyst is one kind in chloroplatinic acid in alcohol, platinum-methyl phenyl silicone, platinum-olefin complex.
The silane coupler is γ-glycidoxypropyltrime,hoxysilane, vinyltrimethoxy silane, ethene
Any of ethyl triethoxy silicane alkane.
The bonding agent is the coupling agent containing epoxy-functional, and its structural formula is as follows：
A kind of Thin Film Transistor-LCD of the embodiment 3 good packaging silicon rubber of high heat conduction cementability, it is by as follows
The raw material composition of parts by weight：26 parts of methylvinyl-polysiloxane resin, 21 parts of vinylite, methyl vinyl silicon oil 14
Part, 25 parts of vinyl polysiloxane, 11 parts of 13 part, nanometer quartz of divinyl tetramethyl disiloxane, 5 parts of catalyst, silicon
5 parts of alkane coupling agent, 3 parts of bonding agent.
A kind of Thin Film Transistor-LCD good packaging silicon rubber of high heat conduction cementability, its preparation method is by methyl
Vinyl polysiloxane resin, vinylite, methyl vinyl silicon oil, vinyl polysiloxane, divinyl tetramethyl two
Siloxanes is sequentially added in double-planet high speed dispersor, is sufficiently stirred for 2-3h, is well mixed, then add and receive into said mixture
Rice quartz, catalyst, silane coupler, bonding agent, the vacuum in the case where 140-150 DEG C of temperature, rotating speed is 30-50r/min are pinched
3-4h is mediated in conjunction machine, room temperature is subsequently cooled to.
The methyl vinyl silicon oil is that end ethene silicon oil viscosity is 2200-4000mpa.s.
The catalyst is one kind in chloroplatinic acid in alcohol, platinum-methyl phenyl silicone, platinum-olefin complex.
The silane coupler is γ-glycidoxypropyltrime,hoxysilane, vinyltrimethoxy silane, ethene
Any of ethyl triethoxy silicane alkane.
The bonding agent is the coupling agent containing epoxy-functional, and its structural formula is as follows：
It is obvious to a person skilled in the art that the invention is not restricted to the details of the one exemplary embodiment, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit is required rather than the explanation is limited, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.Although not each moreover, it will be appreciated that the present specification is described in terms of embodiments
Embodiment is only comprising an independent technical scheme, and this narrating mode of specification is only this area for clarity
Technical staff should be using specification as an entirety, and the technical solutions in the various embodiments may also be suitably combined, forms this
Art personnel may be appreciated other embodiment.
Claims (6)
1. a kind of Thin Film Transistor-LCD good packaging silicon rubber of high heat conduction cementability, it is characterised in that it is by such as
The raw material composition of lower parts by weight：22-30 parts of methylvinyl-polysiloxane resin, 18-25 parts of vinylite, ethylene methacrylic
11-16 parts of base silicone oil, 16-30 parts of vinyl polysiloxane, 5-20 parts of divinyl tetramethyl disiloxane, nanometer quartz 7-
15 parts, 3-8 parts of catalyst, 4-6 parts of silane coupler, 2-5 parts of bonding agent.
2. a kind of Thin Film Transistor-LCD according to claim 1 good packaging silicon rubber of high heat conduction cementability,
Characterized in that, its preparation method is by methylvinyl-polysiloxane resin, vinylite, methyl vinyl silicon oil, second
Alkenyl polysiloxanes, divinyl tetramethyl disiloxane are sequentially added in double-planet high speed dispersor, are sufficiently stirred for 2-3h, are mixed
Close uniform, then nanometer quartz, catalyst, silane coupler, bonding agent are added into said mixture, in temperature 140-150
DEG C, rotating speed be 30-50r/min under vacuum kneader in mediate 3-4h, be subsequently cooled to room temperature.
3. a kind of Thin Film Transistor-LCD according to claim 1 good packaging silicon rubber of high heat conduction cementability,
It is characterized in that：The methyl vinyl silicon oil is that end ethene silicon oil viscosity is 2200-4000mpa.s.
4. a kind of Thin Film Transistor-LCD according to claim 1 good packaging silicon rubber of high heat conduction cementability,
It is characterized in that：The catalyst is one in chloroplatinic acid in alcohol, platinum-methyl phenyl silicone, platinum-olefin complex
Kind.
5. a kind of Thin Film Transistor-LCD according to claim 1 good packaging silicon rubber of high heat conduction cementability,
It is characterized in that：The silane coupler be γ-glycidoxypropyltrime,hoxysilane, vinyltrimethoxy silane,
Any of VTES.
6. a kind of Thin Film Transistor-LCD according to claim 1 good packaging silicon rubber of high heat conduction cementability,
It is characterized in that：The bonding agent is the coupling agent containing epoxy-functional, and its structural formula is as follows：
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710354615.8A CN107151545A (en) | 2017-05-19 | 2017-05-19 | A kind of Thin Film Transistor-LCD good packaging silicon rubber of high heat conduction cementability |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710354615.8A CN107151545A (en) | 2017-05-19 | 2017-05-19 | A kind of Thin Film Transistor-LCD good packaging silicon rubber of high heat conduction cementability |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101381516A (en) * | 2008-10-23 | 2009-03-11 | 上海大学 | Room temperature vulcanized organosilicon pouring sealant for LED |
| CN105111750A (en) * | 2015-09-09 | 2015-12-02 | 蓝星（成都）新材料有限公司 | Organosilicon sealant for LED (light-emitting diode) packaging |
| CN105754543A (en) * | 2016-04-06 | 2016-07-13 | 深圳市欧普特工业材料有限公司 | Organic silicon pouring sealant containing functional group MQ resin for LED and preparation method of organic silicon pouring sealant |
| CN106634809A (en) * | 2016-12-06 | 2017-05-10 | 烟台德邦先进硅材料有限公司 | Anti-poisoning anti-sedimentation high-cohesiveness thermal conductive silica gel for LED (Light-Emitting Diode) power supply packaging |
-
2017
- 2017-05-19 CN CN201710354615.8A patent/CN107151545A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101381516A (en) * | 2008-10-23 | 2009-03-11 | 上海大学 | Room temperature vulcanized organosilicon pouring sealant for LED |
| CN105111750A (en) * | 2015-09-09 | 2015-12-02 | 蓝星（成都）新材料有限公司 | Organosilicon sealant for LED (light-emitting diode) packaging |
| CN105754543A (en) * | 2016-04-06 | 2016-07-13 | 深圳市欧普特工业材料有限公司 | Organic silicon pouring sealant containing functional group MQ resin for LED and preparation method of organic silicon pouring sealant |
| CN106634809A (en) * | 2016-12-06 | 2017-05-10 | 烟台德邦先进硅材料有限公司 | Anti-poisoning anti-sedimentation high-cohesiveness thermal conductive silica gel for LED (Light-Emitting Diode) power supply packaging |
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Application publication date: 20170912 |
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