CN107146576A - 一种用于驱动像素电路的方法 - Google Patents

一种用于驱动像素电路的方法 Download PDF

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CN107146576A
CN107146576A CN201710545849.0A CN201710545849A CN107146576A CN 107146576 A CN107146576 A CN 107146576A CN 201710545849 A CN201710545849 A CN 201710545849A CN 107146576 A CN107146576 A CN 107146576A
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film transistor
tft
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driving thin
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CN107146576B (zh
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曾玉超
梁鹏飞
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TCL Huaxing Photoelectric Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/565,461 priority patent/US10650743B2/en
Priority to PCT/CN2017/097038 priority patent/WO2019006820A1/zh
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Abstract

本发明提供了一种用于驱动像素电路的方法，包括：依次获得所述驱动薄膜晶体管的实际阈值电压和实际电流电压转换系数、所述有机发光二极管的实际发光效率；根据获得的所述驱动薄膜晶体管的实际阈值电压和实际电流电压转换系数、所述有机发光二极管的实际发光效率，计算输入至所述开关薄膜晶体管的源极的补偿数据信号。本发明可以补偿有机发光二极管的发光效率，以提高面板的亮度均匀性。

Description

一种用于驱动像素电路的方法
技术领域
本发明属于显示控制技术领域，具体地说，尤其涉及一种用于驱动AMOLED像素电路的方法。
背景技术
如图1所示为现有技术中一种AMOLED(Active Matrix Organic Light EmittingDiode，有源矩阵有机发光二极管)像素电路结构示意图，该像素电路包括开关薄膜晶体管T11、驱动薄膜晶体管T12、控制薄膜晶体管T13、存储电容C14和有机发光二极管OLED15。其中，开关薄膜晶体管T11的栅极用于输入扫描信号，源极用于输入数据信号，漏极连接驱动薄膜晶体管T12的栅极。驱动薄膜晶体管T12的源极用于输入第一驱动电压OVDD，漏极连接控制薄膜晶体管T13的漏极和有机发光二极管OLED15的阳极。控制薄膜晶体管T13的栅极用于输入控制信号SEN，源极用于输入使能信号VCM_en。存储电容C14的一端连接驱动薄膜晶体管T12的栅极，另一端连接驱动薄膜晶体管T12的漏极。有机发光二极管OLED15的阴极连接第二驱动电压OVSS。
对于图1所示的像素电路结构，通过对各像素电路结构中的驱动薄膜晶体管T12栅极和漏极之间的阈值电压Vth和电流电压转换系数k的差异性进行补偿来提高面板亮度均匀性。但是，有机发光二极管OLED15的发光效率η的差异性也会导致面板亮度不均匀。现有像素电路可补偿k、Vth差异，但未能补偿有机发光二极管OLED15发光效率η的差异。
发明内容
为解决以上问题，本发明提供了一种用于驱动像素电路的方法，用以补偿有机发光二极管的发光效率，以提高面板的亮度均匀性。
根据本发明的一个实施例，提供了一种用于驱动像素电路的方法，所述像素电路包括开关薄膜晶体管、驱动薄膜晶体管、控制薄膜晶体管、存储电容和有机发光二极管，所述开关薄膜晶体管的栅极用于输入扫描信号，源极用于输入数据信号，漏极连接所述驱动薄膜晶体管的栅极；所述驱动薄膜晶体管的源极用于输入第一驱动电压，漏极连接所述控制薄膜晶体管的漏极和所述有机发光二极管的阳极；所述控制薄膜晶体管的栅极用于输入控制信号，源极用于输入使能信号；所述存储电容的第一端连接所述驱动薄膜晶体管的栅极，第二端连接所述驱动薄膜晶体管的漏极，所述有机发光二极管的阴极连接第二驱动电压，
所述方法包括：
向所述像素电路施加扫描信号、数据信号、控制信号、使能信号、第一驱动电压和第二驱动电压，并依次获得所述驱动薄膜晶体管的实际阈值电压和实际电流电压转换系数、所述有机发光二极管的实际发光效率；
根据获得的所述驱动薄膜晶体管的实际阈值电压和实际电流电压转换系数、所述有机发光二极管的实际发光效率，计算输入至所述开关薄膜晶体管的源极的补偿数据信号，以对所述驱动薄膜晶体管的阈值电压和电流电压转换系数、所述有机发光二极管的发光效率进行补偿。
根据本发明的一个实施例，获得所述驱动薄膜晶体管的阈值电压，包括：
分别向所述开关薄膜晶体管的栅极施加扫描信号、源极施加第一数据信号，以使得所述驱动薄膜晶体管的栅极达到第一预置初始电位，同时分别向所述控制薄膜晶体管的栅极施加控制信号、源极施加使能信号，以使得所述驱动薄膜晶体管的漏极达到预定初始电位；
停止向所述控制薄膜晶体管的源极施加使能信号，在所述第一驱动电压对所述驱动薄膜晶体管的漏极进行充电至所述像素电路稳定后，采集所述驱动薄膜晶体管的漏极的电位值；
根据所述驱动薄膜晶体管的栅极的电位值和漏极的电位值，计算得到所述驱动薄膜晶体管的实际阈值电压。
根据本发明的一个实施例，所述第一预置初始电位、所述驱动薄膜晶体管的阈值电压和所述预定初始电位满足以下条件：
VthOLED＞Vdata-VCM＞Vth
其中，VthOLED表示所述有机发光二极管的阈值电压，Vdata表示所述第一预置初始电位，VCM表示所述预定初始电位，Vth表示所述驱动薄膜晶体管的阈值电压。
根据本发明的一个实施例，计算得到所述驱动薄膜晶体管的阈值电压进一步包括通过计算所述驱动薄膜晶体管的栅极和漏极之间的电位差得到所述实际阈值电压。
根据本发明的一个实施例，获得所述驱动薄膜晶体管的电流电压转换系数，包括：
分别向所述开关薄膜晶体管的栅极施加扫描信号、源极施加第二数据信号，以使得所述驱动薄膜晶体管的栅极达到第二预置初始电位，同时分别向所述控制薄膜晶体管的栅极施加控制信号、源极施加使能信号，以使得所述驱动薄膜晶体管的漏极达到预定初始电位，其中，所述第二预置初始电位等于所述第一预置初始电位与所述驱动薄膜晶体管的实际阈值电压的和；
同时停止向所述开关薄膜晶体管的栅极施加扫描信号和向所述控制薄膜晶体管的源极施加使能信号，所述第一驱动电压对所述驱动薄膜晶体管的漏极进行充电；
对所述驱动薄膜晶体管的漏极充电预定时间后，采集所述驱动薄膜晶体管的漏极的电位值；
根据所述驱动薄膜晶体管的预定目标电流电压转换系数及对应的漏极电位值，以及获得的所述驱动薄膜晶体管的漏极的电位值和所述预定初始电位计算所述驱动薄膜晶体管的实际电流电压转换系数。
根据本发明的一个实施例，计算所述驱动薄膜晶体管的电流电压转换系数，包括：通过下式计算所述电流电压转换系数：
k0/k＝(Vs01-VCM)/(Vs-VCM)
其中，k0表示所述驱动薄膜晶体管的预定目标电流电压转换系数，k表示所述驱动薄膜晶体管的实际电流电压转换系数，Vs表示所述驱动薄膜晶体管的实际电流电压转换系数对应的漏极的电位，Vs01表示所述驱动薄膜晶体管的预定目标电流电压转换系数对应的漏极的电位。
根据本发明的一个实施例，获得所述有机发光二极管的发光效率，包括：
分别向所述开关薄膜晶体管的栅极施加扫描信号、源极施加第三数据信号，以使得所述驱动薄膜晶体管的栅极达到第三预置初始电位，同时分别向所述控制薄膜晶体管的栅极施加控制信号、源极施加使能信号，以使得所述驱动薄膜晶体管的漏极达到预定初始电位，其中，通过所述驱动薄膜晶体管的第一预置初始电位和实际阈值电压、预定目标阈值电压、预定初始电位计算所述第三预置初始电位；
同时停止向所述开关薄膜晶体管的栅极施加扫描信号和向所述控制薄膜晶体管的源极施加使能信号，使得所述第一驱动电压经由所述驱动薄膜晶体管流过所述有机发光二极管的电流恒定；
对所述有机发光二极管充电至其两端跨压稳定后，采集所述驱动薄膜晶体管的漏极的电位值；
基于有机发光二极管发光效率与跨压的反比例关系，根据有机发光二极管的预定目标发光效率及对应的驱动薄膜晶体管的漏极的电位值、所述第二驱动电压，计算所述有机发光二极管的实际发光效率。
根据本发明的一个实施例，计算所述第三预置初始电位，包括：通过下式计算所述第三预置初始电位：
其中，Vg″表示所述第三预置初始电位，ΔVth表示所述驱动薄膜晶体管的预定目标阈值电压与实际阈值电压的差值。
根据本发明的一个实施例，计算所述有机发光二极管的发光效率，包括：通过下式计算所述有机发光二极管的实际发光效率：
η0/η＝(Vs-OVSS)/(Vs02-OVSS)
其中，η0表示所述有机发光二极管的预定目标发光效率，η表示所述有机发光二极管的实际发光效率，Vs02表示所述有机发光二极管的预定目标发光效率对应的驱动薄膜晶体管的漏极的电位，OVSS表示所述第二驱动电压，Vs表示所述有机发光二极管的实际发光效率对应驱动薄膜晶体管的漏极的电位。
根据本发明的一个实施例，根据获得的所述驱动薄膜晶体管的实际阈值电压和电流电压转换系数、所述有机发光二极管的发光效率，计算输入至所述开关薄膜晶体管的源极的数据信号，包括：
利用下式对所述驱动薄膜晶体管的实际电流电压转换系数、所述有机发光二极管的实际发光效率进行补偿：
其中，Vg'表示对所述驱动薄膜晶体管的实际电流电压转换系数、所述有机发光二极管的实际发光效率进行补偿后的栅极的电位；
利用下式对所述驱动薄膜晶体管的实际阈值电压进行补偿；
Vg″＝Vg′+ΔVth
其中，Vg″表示对所述驱动薄膜晶体管的实际阈值电压进行补偿后的栅极的电位值，ΔVth表示所述驱动薄膜晶体管的预定目标阈值电压与实际阈值电压的差值；
根据所述驱动薄膜晶体管的实际阈值电压进行补偿后的栅极的电位，确定输入至所述开关薄膜晶体管的源极的补偿数据信号。
本发明的有益效果：
本发明通过预定顺序获得并补偿驱动薄膜晶体管的实际阈值电压和实际电流电压转换系数、有机发光二极管的实际发光效率，可以提高面板的亮度均匀性。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要的附图做简单的介绍：
图1是现有技术中一种AMOLED像素电路结构示意图；
图2a是现有技术中对图1所示像素电路结构进行驱动薄膜晶体管的阈值电压和电流电压转换系数侦测顺序的流程图；
图2b是现有技术中对图1所示像素电路结构进行驱动薄膜晶体管的阈值电压和电流电压转换系数补偿顺序的流程图；
图3是根据本发明的一个实施例的用于驱动像素电路的方法流程图；
图4是根据本发明的一个实施例的AMOLED像素电路结构示意图；
图5a是根据本发明的一个实施例的驱动薄膜晶体管的阈值电压侦测时各信号波形示意图；
图5b是根据本发明的一个实施例的驱动薄膜晶体管的电流电压转换系数侦测时各信号波形示意图；
图5c是根据本发明的一个实施例的有机发光二极管的发光效率侦测时各信号波形示意图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
如图1所示的AMOLED像素电路结构中，有机发光二极管OLED15的亮度L与其电流IOLED成正比：
L＝η*IOLED (1)
其中，η表示有机发光二极管OLED15的发光效率。
驱动薄膜晶体管T12工作在饱和区，通过其栅极的电压控制其源漏极之间的电流Ids：
Ids＝k(Vg-Vg-Vth)2 (2)
其中，k表示驱动薄膜晶体管的实际电流电压转换系数，Vg表示驱动薄膜晶体管T12的栅极电位，Vs表示驱动薄膜晶体管T12的漏极电位，Vth表示驱动薄膜晶体管T12的实际阈值电压。
由于有机发光二极管OLED15与驱动薄膜晶体管T12串联，所以：
Ids＝IOLED (3)
对于显示面板中的每个像素，由于驱动薄膜晶体管T12的Vth、k差异性，以及有机发光二极管T12的发光效率η的差异性，会导致Vth、k相同的情况下，像素间电流Ids存在差异。
现有技术中采用图2a所示的顺序来获得驱动薄膜晶体管的阈值电压和电流电压转换系数，采用图2b所示的顺序来补偿驱动薄膜晶体管的阈值电压和电流电压转换系数。通过驱动薄膜晶体管的阈值电压和电流电压转换系数对栅极的电压进行补偿：
其中，k表示当前像素的驱动薄膜晶体管的实际电流电压转换系数，k0表示预定目标电流电压转换系数，ΔVth表示当前像素的实际阈值电压与目标阈值电压的差异值。
将每个像素的驱动薄膜晶体管栅极处的电位由Vg″代替Vg进行驱动，可补偿像素的驱动薄膜晶体管的k、Vth差异，但未能补偿有机发光二极管的发光效率η的差异。
因此，本发明提供了一种用于驱动AMOLED像素电路的方法，如图3所示为根据本发明的一个实施例的方法流程图，以下参考图3来对本发明进行详细说明。
该方法用于驱动图4所示的AMOLED像素电路，该像素电路包括开关薄膜晶体管T21、驱动薄膜晶体管T22、控制薄膜晶体管T23、存储电容C和有机发光二极管OLED。该开关薄膜晶体管T21的栅极用于输入扫描信号SCAN，源极用于输入数据信号DATA，漏极连接驱动薄膜晶体管的栅极。驱动薄膜晶体管T22的源极用于输入第一驱动电压OVDD，漏极连接控制薄膜晶体管T23的漏极和有机发光二极管OLED的阳极。有机发光二极管OLED的阴极连接第二驱动电压OVSS，控制薄膜晶体管T23的栅极用于输入控制信号SEN，源极用于输入使能信号VCM。存储电容C的第一端连接驱动薄膜晶体管T22的栅极，第二端连接驱动薄膜晶体管T22的漏极。另外，为方便数据采集，在控制薄膜晶体管T23的漏极还设置有数据采集电路ADC。
该方法包括以下两个步骤。在步骤S110中，向像素电路施加对应的扫描信号、数据信号、控制信号、使能信号、第一驱动电压和第二驱动电压，并依次获得驱动薄膜晶体管的实际阈值电压和实际电流电压转换系数、有机发光二极管的实际发光效率。在步骤S120中，根据获得的驱动薄膜晶体管的实际阈值电压和实际电流电压转换系数、有机发光二极管的实际发光效率计算输入至开关薄膜晶体管的源极的补偿数据信号，以对驱动薄膜晶体管的阈值电压和电流电压转换系数、有机发光二极管的发光效率进行补偿。
在步骤S110中，首先获得驱动薄膜晶体管T22的阈值电压Vth。具体的，参见图5a，先分别向开关薄膜晶体管T21的栅极施加扫描信号SCAN、源极施加第一数据信号DATA1，以使得驱动薄膜晶体管T22的栅极达到第一预置初始电位Vdata，同时分别向控制薄膜晶体管T23的栅极施加控制信号SEN、源极施加使能信号VCM_en，以使得驱动薄膜晶体管T22的漏极达到预定初始电位VCM。
然后，停止向控制薄膜晶体管T23的源极施加使能信号VCM_en，第一驱动电压OVDD对驱动薄膜晶体管的漏极进行充电，待像素电路达到稳定状态后，采集驱动薄膜晶体管T22的漏极的电位值Vs。待像素电路稳定后，驱动薄膜晶体管的漏极会充电至Vdata-Vth，该处的电位值可通过数据采集电路ADC读取。
最后，根据驱动薄膜晶体管T22的栅极的电位值和漏极的电位值计算得到驱动薄膜晶体管T22的实际阈值电压Vth。实际阈值电压Vth通过求取驱动薄膜晶体管的栅极和漏极之间的电位差得到，即：
Vth＝Vg-Vs (5)。
由式(5)可知，为保证驱动薄膜晶体管管的漏极会充电至Vdata-Vth，驱动薄膜晶体管T22需打开，使得第一驱动电压对驱动薄膜晶体管管的漏极充电，需满足Vdata-VCM＞Vth；但不需要点亮有机发光二极管OLED，需满足VthOLED＞Vdata-VCM＞Vth，VthOLED表示有机发光二极管OLED的阈值电压。
接着，获得驱动薄膜晶体管T22的实际电流电压转换系数k。具体的，参见图5b，先向开关薄膜晶体管T21的栅极施加扫描信号SCAN、源极施加第二数据信号DATA2，以使得驱动薄膜晶体管T22的栅极处达到第二预置初始电位Vdata+Vth。同时分别向控制薄膜晶体管T23的栅极施加控制信号SEN、源极施加使能信号VCM_en，以使得驱动薄膜晶体管T22的漏极达到预定初始电位VCM。其中，第二预置初始电位等于第一预置初始电位与驱动薄膜晶体管的阈值电压的和。该过程对应图5b中的t41时间段。
然后，同时停止向开关薄膜晶体管T21的栅极施加扫描信号和向控制薄膜晶体管T22的源极施加使能信号，第一驱动电压OVDD对驱动薄膜晶体管T22的漏极进行充电。同时断开驱动薄膜晶体管T22的栅极和控制薄膜晶体管T23的源极的电源供应后，驱动薄膜晶体管T22的栅极和漏极之间的压差Vgs恒定并且大于其实际阈值电压Vth，则驱动薄膜晶体管T22打开，有一固定电流Ids对驱动薄膜晶体管T22的漏极充电。此时，Ids已经消除驱动薄膜晶体管T22的实际阈值电压的影响，该固定电流Ids表示为：
Ids＝k(Vgs-Vth)2＝k(Vdata-VCM)2 (6)
其中，k表示当前像素的驱动薄膜晶体管T22的实际电流电压转换系数。
然后，对该驱动薄膜晶体管的漏极充电预定时间后，采集驱动薄膜晶体管22的漏极的电位值。具体的，对驱动薄膜晶体管22的漏极充电预定时间t42(例如可选取断开驱动薄膜晶体管22的栅极和漏极的电源供应后漏极点电位值变化过程中的某一段时间，否则漏极点位稳定后电路中无电流流动，无法监测电流的流量)后，再对驱动薄膜晶体管22的漏极进行采样，此时，漏极的电位为VCM+Ids*t42/C,C表示存储电容C的电容值，并且VCM+Ids*t41/C＜VthOLED，则：
Ids＝(Vs-VCM)*C/t41 (7)
最后，根据驱动薄膜晶体管T22的预定目标电流电压转换系数及对应的漏极电位值，以及获得的驱动薄膜晶体管T22的漏极的电位值和预定初始电位计算驱动薄膜晶体管T22的实际电流电压转换系数。具体的，选取驱动薄膜晶体管T22的预定目标电流电压转换系数及对应的漏极的电位值，根据驱动薄膜晶体管T22的漏极的电位值和使能信号(可以得到预定初始电位VCM)计算驱动薄膜晶体管T22的实际电流电压转换系数。具体的，选取一预定目标驱动薄膜晶体管的电流电压转换系数k0，并且该k0对应的驱动薄膜晶体管的漏极的电位Vs01已知(可通过统计方法求取驱动薄膜晶体管的多个电流电压转换系数的平均值得到k0，对应的漏极电位值的平均值得到Vs01)，则通过下式可计算得到k：
k0/k＝(Vs01-VCM)/(Vs-VCM) (8)
或者，由式(6)可推知：
k＝Ids/(Vdata-VCM)2 (9)
则根据式(7)计算得到的Ids，通过式(9)计算得到驱动薄膜晶体管的电流电压转换系数k。式(8)可通过式(7)和式(9)推导得出，可避免引入存储电容C的电容值和时间t41。
接下来，获得有机发光二极管OLED的实际发光效率η。具体的，先分别向开关薄膜晶体管T21的栅极施加扫描信号SCAN、源极施加第三数据信号DATA3，以使得驱动薄膜晶体管T23的栅极达到第三预置初始电位：
其中，ΔVth表示当前像素的驱动薄膜晶体管T23的实际阈值电压与预定目标阈值电压的差异值。第三预置初始电位根据第一预置初始电位Vdata和阈值电压Vth、预定目标阈值电压、第一预定初始电位VCM计算得到，向控制薄膜晶体管的栅极施加控制信号、源极施加使能信号VCM_en，以使得驱动薄膜晶体管的漏极达到预定初始电位VCM。
然后，同时停止向开关薄膜晶体管T21的栅极施加扫描信号和向控制薄膜晶体管T23的源极施加使能信号VCM_en，使得第一驱动电压经由驱动薄膜晶体管流过有机发光二极管的电流恒定。同时断开驱动薄膜晶体管的栅极和漏极的电源供应后，两者之间压差Vgs恒定，且能保证流过有机发光二极管OLED的电流恒定，此时：
Ids＝k(Vg″-VCM)2＝k0(Vdata-VCM)2 (11)
然后，对有机发光二极管OLED充电至其两端跨压稳定后，采集驱动薄膜晶体管T23的漏极的电位值。如图5c所示，有机发光二极管OLED充电一段时间后，其阳极和阴极跨压达到稳定后，数据采集电路ADC读取驱动薄膜晶体管T23的漏极处的电压，可以获得有机发光二极管OLED在相同电流驱动下的不同跨压。
最后，基于有机发光二极管发光效率与跨压的反比例关系，根据有机发光二极管的预定目标发光效率及对应的驱动薄膜晶体管的漏极的电位值、第二驱动电压OVSS计算有机发光二极管OLED的发光效率。相同电流下，有机发光二极管OLED发光效率η与跨压成反比，选取一目标发光效率η0对该像素的OLED的发光效率η进行补偿。有机发光二极管OLED的实际发光效率η与目标发光效率η0的关系表示为：
η0/η＝(Vs-OVSS)/(Vs02-OVSS) (12)
其中，Vs02表示有机发光二极管OLED为目标发光效率η0时的Vs电压((可通过统计方法求取多个有机发光二极管OLED发光效率的平均值得到η0，对应的漏极电位值的平均值得到Vs02)。
接下来，在步骤S120中，在显示时，先进行η、k补偿，向开关薄膜晶体管T21的源极施加第四数据信号，该第四数据信号使得驱动薄膜晶体管的栅极的电位为：
然后补偿驱动薄膜晶体管的阈值电压，补偿后使得栅极的电位为：
Vg″＝Vg'+ΔVth (14)
经过补偿后的有机发光二极管OLED的发光亮度计算公式为：
L＝η0*k0(Vg-Vs-Vth0)2 (15)
其中，Vth0表示驱动薄膜晶体管的预定阈值电压，ΔVth为驱动薄膜晶体管的预定阈值电压与侦测得到的实际阈值电压的差值。
由式(15)可以看出，本发明提供的方法可以补偿AMOLED显示面板驱动薄膜晶体管的Vth、k，及有机发光二极管OLED的η。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (10)

1.一种用于驱动像素电路的方法，所述像素电路包括开关薄膜晶体管、驱动薄膜晶体管、控制薄膜晶体管、存储电容和有机发光二极管，所述开关薄膜晶体管的栅极用于输入扫描信号，源极用于输入数据信号，漏极连接所述驱动薄膜晶体管的栅极；所述驱动薄膜晶体管的源极用于输入第一驱动电压，漏极连接所述控制薄膜晶体管的漏极和所述有机发光二极管的阳极；所述控制薄膜晶体管的栅极用于输入控制信号，源极用于输入使能信号；所述存储电容的第一端连接所述驱动薄膜晶体管的栅极，第二端连接所述驱动薄膜晶体管的漏极，所述有机发光二极管的阴极连接第二驱动电压，
所述方法包括：
向所述像素电路施加扫描信号、数据信号、控制信号、使能信号、第一驱动电压和第二驱动电压，并依次获得所述驱动薄膜晶体管的实际阈值电压和实际电流电压转换系数、所述有机发光二极管的实际发光效率；
根据获得的所述驱动薄膜晶体管的实际阈值电压和实际电流电压转换系数、所述有机发光二极管的实际发光效率，计算输入至所述开关薄膜晶体管的源极的补偿数据信号，以对所述驱动薄膜晶体管的阈值电压和电流电压转换系数、所述有机发光二极管的发光效率进行补偿。
2.根据权利要求1所述的方法，其特征在于，获得所述驱动薄膜晶体管的阈值电压，包括：
分别向所述开关薄膜晶体管的栅极施加扫描信号、源极施加第一数据信号，以使得所述驱动薄膜晶体管的栅极达到第一预置初始电位，同时分别向所述控制薄膜晶体管的栅极施加控制信号、源极施加使能信号，以使得所述驱动薄膜晶体管的漏极达到预定初始电位；
停止向所述控制薄膜晶体管的源极施加使能信号，在所述第一驱动电压对所述驱动薄膜晶体管的漏极进行充电至所述像素电路稳定后，采集所述驱动薄膜晶体管的漏极的电位值；
根据所述驱动薄膜晶体管的栅极的电位值和漏极的电位值，计算得到所述驱动薄膜晶体管的实际阈值电压。
3.根据权利要求2所述的方法，其特征在于，所述第一预置初始电位、所述驱动薄膜晶体管的阈值电压和所述预定初始电位满足以下条件：
VthOLED＞Vdata-VCM＞Vth
其中，VthOLED表示所述有机发光二极管的阈值电压，Vdata表示所述第一预置初始电位，VCM表示所述预定初始电位，Vth表示所述驱动薄膜晶体管的阈值电压。
4.根据权利要求2所述的方法，其特征在于，计算得到所述驱动薄膜晶体管的阈值电压进一步包括通过计算所述驱动薄膜晶体管的栅极和漏极之间的电位差得到所述实际阈值电压。
5.根据权利要求2-4中任一项所述的方法，其特征在于，获得所述驱动薄膜晶体管的电流电压转换系数，包括：
分别向所述开关薄膜晶体管的栅极施加扫描信号、源极施加第二数据信号，以使得所述驱动薄膜晶体管的栅极达到第二预置初始电位，同时分别向所述控制薄膜晶体管的栅极施加控制信号、源极施加使能信号，以使得所述驱动薄膜晶体管的漏极达到预定初始电位，其中，所述第二预置初始电位等于所述第一预置初始电位与所述驱动薄膜晶体管的实际阈值电压的和；
同时停止向所述开关薄膜晶体管的栅极施加扫描信号和向所述控制薄膜晶体管的源极施加使能信号，所述第一驱动电压对所述驱动薄膜晶体管的漏极进行充电；
对所述驱动薄膜晶体管的漏极充电预定时间后，采集所述驱动薄膜晶体管的漏极的电位值；
根据所述驱动薄膜晶体管的预定目标电流电压转换系数及对应的漏极电位值，以及获得的所述驱动薄膜晶体管的漏极的电位值和所述预定初始电位计算所述驱动薄膜晶体管的实际电流电压转换系数。
6.根据权利要求5所述的方法，其特征在于，计算所述驱动薄膜晶体管的电流电压转换系数，包括：通过下式计算所述电流电压转换系数：
k0/k＝(Vs01-VCM)/(Vs-VCM)
其中，k0表示所述驱动薄膜晶体管的预定目标电流电压转换系数，k表示所述驱动薄膜晶体管的实际电流电压转换系数，Vs表示所述驱动薄膜晶体管的实际电流电压转换系数对应的漏极的电位，Vs01表示所述驱动薄膜晶体管的预定目标电流电压转换系数对应的漏极的电位。
7.根据权利要求6所述的方法，其特征在于，获得所述有机发光二极管的发光效率，包括：
分别向所述开关薄膜晶体管的栅极施加扫描信号、源极施加第三数据信号，以使得所述驱动薄膜晶体管的栅极达到第三预置初始电位，同时分别向所述控制薄膜晶体管的栅极施加控制信号、源极施加使能信号，以使得所述驱动薄膜晶体管的漏极达到预定初始电位，其中，通过所述驱动薄膜晶体管的第一预置初始电位和实际阈值电压、预定目标阈值电压、预定初始电位计算所述第三预置初始电位；
同时停止向所述开关薄膜晶体管的栅极施加扫描信号和向所述控制薄膜晶体管的源极施加使能信号，使得所述第一驱动电压经由所述驱动薄膜晶体管流过所述有机发光二极管的电流恒定；
对所述有机发光二极管充电至其两端跨压稳定后，采集所述驱动薄膜晶体管的漏极的电位值；
基于有机发光二极管发光效率与跨压的反比例关系，根据有机发光二极管的预定目标发光效率及对应的驱动薄膜晶体管的漏极的电位值、所述第二驱动电压，计算所述有机发光二极管的实际发光效率。
8.根据权利要求7所述的方法，其特征在于，计算所述第三预置初始电位，包括：通过下式计算所述第三预置初始电位：
<mrow> <msup> <msub> <mi>V</mi> <mi>g</mi> </msub> <mrow> <mo>&amp;prime;</mo> <mo>&amp;prime;</mo> </mrow> </msup> <mo>=</mo> <msqrt> <mfrac> <msub> <mi>k</mi> <mn>0</mn> </msub> <mi>k</mi> </mfrac> </msqrt> <mrow> <mo>(</mo> <mi>V</mi> <mi>d</mi> <mi>a</mi> <mi>t</mi> <mi>a</mi> <mo>-</mo> <mi>V</mi> <mi>C</mi> <mi>M</mi> <mo>)</mo> </mrow> <mo>+</mo> <mi>V</mi> <mi>C</mi> <mi>M</mi> <mo>+</mo> <msub> <mi>&amp;Delta;V</mi> <mrow> <mi>t</mi> <mi>h</mi> </mrow> </msub> </mrow>
其中，Vg”表示所述第三预置初始电位，ΔVth表示所述驱动薄膜晶体管的预定目标阈值电压与实际阈值电压的差值。
9.根据权利要求8所述的方法，其特征在于，计算所述有机发光二极管的发光效率，包括：通过下式计算所述有机发光二极管的实际发光效率：
η0/η＝(Vs-OVSS)/(Vs02-OVSS)
其中，η0表示所述有机发光二极管的预定目标发光效率，η表示所述有机发光二极管的实际发光效率，Vs02表示所述有机发光二极管的预定目标发光效率对应的驱动薄膜晶体管的漏极的电位，OVSS表示所述第二驱动电压，Vs表示所述有机发光二极管的实际发光效率对应驱动薄膜晶体管的漏极的电位。
10.根据权利要求9所述的方法，其特征在于，根据获得的所述驱动薄膜晶体管的实际阈值电压和电流电压转换系数、所述有机发光二极管的发光效率，计算输入至所述开关薄膜晶体管的源极的数据信号，包括：
利用下式对所述驱动薄膜晶体管的实际电流电压转换系数、所述有机发光二极管的实际发光效率进行补偿：
<mrow> <msup> <msub> <mi>V</mi> <mi>g</mi> </msub> <mo>&amp;prime;</mo> </msup> <mo>=</mo> <msqrt> <mfrac> <mrow> <mi>k</mi> <mn>0</mn> <mo>*</mo> <mi>&amp;eta;</mi> <mn>0</mn> </mrow> <mrow> <mi>k</mi> <mo>*</mo> <mi>&amp;eta;</mi> </mrow> </mfrac> </msqrt> <mrow> <mo>(</mo> <mi>V</mi> <mi>g</mi> <mo>-</mo> <mi>V</mi> <mi>s</mi> <mo>)</mo> </mrow> <mo>+</mo> <mi>V</mi> <mi>s</mi> </mrow>
其中，Vg'表示对所述驱动薄膜晶体管的实际电流电压转换系数、所述有机发光二极管的实际发光效率进行补偿后的栅极的电位；
利用下式对所述驱动薄膜晶体管的实际阈值电压进行补偿；
Vg″＝Vg′+ΔVth
其中，Vg”表示对所述驱动薄膜晶体管的实际阈值电压进行补偿后的栅极的电位值，ΔVth表示所述驱动薄膜晶体管的预定目标阈值电压与实际阈值电压的差值；
根据所述驱动薄膜晶体管的实际阈值电压进行补偿后的栅极的电位，确定输入至所述开关薄膜晶体管的源极的补偿数据信号。
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CN113223450A (zh) * 2021-05-14 2021-08-06 北京京东方光电科技有限公司 基于微型发光二极管单元的背光模组及显示面板
CN113506538A (zh) * 2021-07-16 2021-10-15 深圳市华星光电半导体显示技术有限公司 像素驱动电路及显示面板

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