CN107104196A - A kind of OLED and preparation method thereof, display device - Google Patents
A kind of OLED and preparation method thereof, display device Download PDFInfo
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- CN107104196A CN107104196A CN201610096828.0A CN201610096828A CN107104196A CN 107104196 A CN107104196 A CN 107104196A CN 201610096828 A CN201610096828 A CN 201610096828A CN 107104196 A CN107104196 A CN 107104196A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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Abstract
The present invention relates to display technology field, more particularly to a kind of OLED and preparation method thereof, display device, by setting organic photoresist layer between contact insulation layer and second metal layer, the cracking part of contact insulation layer is filled using the high viscosity property of organic photoresistance, the purpose of insulation the first metal layer and second metal layer is reached, makes image element circuit normal work.And form organic photoresist layer and form contact insulation layer using identical light shield, extra light shield expense is not produced；High pixel product process stability enhancing, and then improve product yield simultaneously.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of OLED and its preparation
Method, display device.
Background technology
Active matrix organic light-emitting diode (Active-matrix organic light emitting
Diode, abbreviation AMOLED) it is that one kind mainly utilizes organic semiconductor and luminescent material in electricity
Under the driving of field, pass through carrier and inject and compound and luminous panel.With traditional LC D phases
Than AMOLED display screens have fast response time, wide colour gamut, high-contrast, self-luminous
And the advantage of more low-power consumption.
But in existing OLED, in contact insulation layer (Contact Layer, letter
Claim CT Layer) formed after, because laminated construction stress release problem causes contact insulation layer to exist
The phenomenon that Hole (through hole) edge ftractures, thus good insulating performance can not be kept, enter
And cause pixel (Pixel) circuit actual functional capability to fail, the performance of product is influenceed, this is ability
Field technique personnel do not expect what is seen.
The content of the invention
For above-mentioned problem, the invention discloses a kind of OLED, including：
The first metal layer (Metal Layer-1)；
Contact insulation layer, is arranged on the first metal layer；
Second metal layer (Metal Layer-2), is arranged on the contact insulation layer；
Wherein, it is additionally provided with cohesive material between the second metal layer and the contact insulation layer
Layer, the viscous material layer is to when the contact insulation layer produces slight crack, by the viscosity
Material layer fills the slight crack.
Above-mentioned OLED, wherein, the viscous material layer includes organic photoresist layer.
Above-mentioned OLED, wherein, the thickness of organic photoresist layer is 0.1~2 μm.
Above-mentioned OLED, wherein, the viscous material layer also includes diaphragm, and institute
Diaphragm is stated on organic photoresist layer.
Above-mentioned OLED, wherein, the material of the diaphragm is tin indium oxide (ITO)
Or silica (SiO).
Above-mentioned OLED, wherein, the thickness of the diaphragm is 20~50nm.
Above-mentioned OLED, wherein, in addition to：
Substrate；
Polysilicon layer (poly silicon), is arranged on the substrate；
Insulation material layer (insulator), is arranged at the polysilicon layer and the first metal layer
Between；
Wherein, through hole is provided with the insulation material layer, the first metal layer passes through described
Through hole is electrically connected with the polysilicon layer.
The invention also discloses a kind of preparation method of OLED, including：
One substrate is provided；
Polysilicon layer is formed on the substrate；
The insulation material layer with through hole is formed on the polysilicon layer；
The first metal layer is formed on the insulation material layer；
Contact insulation layer is formed on the first metal layer；
Viscous material layer is formed on the contact insulation layer, the viscous material layer is to work as
When the contact insulation layer produces slight crack, the slight crack is filled by the viscous material layer；And
Second metal layer is formed on the viscous material layer.
The preparation method of above-mentioned OLED, wherein, on the contact insulation layer
The step of forming viscous material layer includes：Organic photoresist layer is formed on the contact insulation layer.
The preparation method of above-mentioned OLED, wherein, on the contact insulation layer
The step of forming viscous material layer also includes：Diaphragm is formed on organic photoresist layer.
The preparation method of above-mentioned OLED, wherein, form the viscous material layer and shape
Into the step of the contact insulation layer use identical light shield.
Invention additionally discloses a kind of display device, including above-mentioned OLED.
Foregoing invention has the following advantages that or beneficial effect：
The invention discloses a kind of OLED and preparation method thereof, display device, pass through
Organic photoresist layer is set between contact insulation layer and second metal layer, the height of organic photoresistance is utilized
Viscometric properties fill the cracking part of contact insulation layer, reach insulation the first metal layer and second
The purpose of metal level, makes image element circuit normal work.And form organic photoresist layer and formation connects
Touch insulating barrier and use identical light shield, extra light shield expense is not produced；While high pixel product
Process stability strengthens, and then improves product yield.
Brief description of the drawings
By reading the detailed description made with reference to the following drawings to non-limiting example, this hair
Bright and its feature, profile and advantage will become more apparent.The identical mark in whole accompanying drawings
Note indicates identical part.Accompanying drawing can be drawn to scale, it is preferred that emphasis is this hair is shown
Bright purport.
Fig. 1 is the schematic diagram of OLED in the embodiment of the present invention；
Fig. 2 is the method flow diagram of preparation OLED in the embodiment of the present invention.
Embodiment
The present invention is further illustrated with specific embodiment below in conjunction with the accompanying drawings, but not
It is used as the restriction of the present invention.
The present invention relates to thin film transistor (TFT) (TFT) array base palte or IGZO (Indium
Gallium Zinc Oxide, indium gallium zinc oxide)/LTPS (Low Temperature Poly
Silicon, low temperature polycrystalline silicon)/AMOLED substrates.Mainly in high pixel/high-res production
Product are designed with production, after contact insulation layer is formed, having by being increased newly on contact insulation layer
Machine photoresist layer come solve the problems, such as to cause because of laminated construction stress release contact insulation layer portion separate
The problem of splitting, and good insulating properties can not be kept, to reach the purpose of metal above and below insulation.
Embodiment one：
As shown in figure 1, the present embodiment is related to a kind of OLED, the OLED bag
Include the substrate 1 set gradually according to order from bottom to up, polysilicon layer 2, insulation material layer
3, the first metal layer 4, contact insulation layer 5, viscous material layer 6 and second metal layer 7；
Wherein, through hole 31 is formed with insulation material layer 3, and the first metal layer 4 covers this and led to
The side wall in hole 31 and bottom, and contacted by the through hole 31 with the formation of polysilicon layer 2.
In embodiments of the invention, sticky material is set between second metal layer 7 and contact insulation layer 5
The purpose of the bed of material 6 is when contact insulation layer 5 ftractures because of laminated construction stress release problem
When producing slight crack or crack, to fill the slight crack or crack, and then the first metal layer 4 is avoided
Made electrical contact with the formation of second metal layer 7.Show contact insulation layer 5 in through hole 31 in Fig. 1
The edge of lower section is ftractureed, but due to the filling of viscous material layer 6, can be very good to protect
Hold insulating properties so that the first metal layer 4 and second metal layer 7 are insulated from each other, and then make picture
Plain circuit is able to normal work, it is preferred that the viscous material layer 6 is with high viscosity property
Material, preferably to play a part of insulation the first metal layer 4 and second metal layer 7.
In a preferred embodiment of the invention, above-mentioned viscous material layer 6 includes organic photoresistance
Layer.
In a preferred embodiment of the invention, the thickness of above-mentioned organic photoresist layer is
0.1 μm -2 μm (such as 0.1 μm, 0.5 μm, 1 μm or 2 μm).
On this basis, further, above-mentioned viscous material layer 6 also includes being located at organic photoresistance
Diaphragm (not indicating the organic photoresist layer and diaphragm in figure) on layer.
In a preferred embodiment of the invention, the material of said protection film is tin indium oxide
Or silica.
In a preferred embodiment of the invention, the thickness of said protection film is 20~50nm
(such as 20nm, 30nm, 40nm or 50nm).
Embodiment two：
As shown in Fig. 2 the present embodiment is related to a kind of preparation method of OLED, this method
Specifically include following steps：
There is provided a substrate by step S1, it is preferred that the substrate is glass substrate.
Step S2, forms polysilicon layer on substrate, and the technique for forming the polysilicon layer can
To use technology well-known to those skilled in the art, just it will not go into details herein.
Step S3, forms the insulation material layer with through hole on polysilicon layer, specifically,
One layer of insulating materials is deposited on polysilicon layer, insulating materials is entered using photoetching process afterwards
Row etching, which forms this, has the insulation material layer of through hole, briefly, the system of the insulation material layer
Standby flow be film forming->Coating photoresistance->Exposure->Development->Etching->Peel off.
Step S4, forms the first metal layer with by the side of the upper surface of insulation material layer, through hole
The upper surface of wall and the polysilicon layer exposed by through hole is covered, specifically, in exhausted
Layer of metal material is deposited on edge material layer, is pointed to afterwards using photoetching process in through hole
Metal material is performed etching, to cause the side wall positioned at through hole and its metal material and the position of bottom
Metal material thickness in the upper surface of insulation material layer is suitable, and remaining metal material formation should
The first metal layer；In an embodiment of the present invention, the part surface of the first metal layer directly with
Polysilicon layer is in contact.
Step S5, forms contact insulation layer on the first metal layer, forms contact insulation
The step of layer, can be using step not known to art personnel, and just it will not go into details herein.
Step S6, forms viscous material layer on contact insulation layer, excellent in the present invention one
In the embodiment of choosing, the step of viscous material layer is formed on contact insulation layer is specially：
Formed after organic photoresist layer, and protected in being formed on organic photoresist layer on contact insulation layer
Film；I.e. the viscous material layer includes organic light group layer and the protection on organic light group layer
Film.Specifically, the step of forming organic photoresist layer is：Be coated with organic photoresist->Exposure
->Development->Baking->Film forming->Coating photoresistance->Exposure->Development->Etching->Peel off.
In a preferred embodiment of the invention, the thickness of above-mentioned viscous material layer is
0.1 μm -2 μm (such as 0.1 μm, 0.5 μm, 1 μm or 2 μm).
In a preferred embodiment of the invention, the material of said protection film is tin indium oxide
Or silica.
In a preferred embodiment of the invention, the thickness of said protection film is
20nm-50nm (such as 20nm, 30nm, 40nm or 50nm).
In a preferred embodiment of the invention, form viscous material layer and contacted absolutely with being formed
Edge layer uses identical light shield, can be with formation specifically, forming organic photoresist layer and diaphragm
Contact insulation layer uses identical light shield, so that extra light shield expense will not be produced.
Step S7, forms second metal layer on viscous material layer, forms second metal
The technique of layer is identical with the first metal layer, in order to reduce repetition, is not just repeated herein.
In an embodiment of the present invention, if contact insulation layer because of laminated construction stress release problem or
Person's other problemses occur cracking and produce slight crack or crack, but due to viscous material layer to the slight crack or
The filling in crack, still can be very good to keep insulating properties so that the first metal layer and the second gold medal
Belong to layer insulated from each other, and then enable image element circuit normal work,
It is seen that, the present embodiment is the method corresponding with the embodiment of above-mentioned OLED
Embodiment, the present embodiment can work in coordination implementation with the embodiment of above-mentioned OLED.It is above-mentioned
The relevant technical details mentioned in the embodiment of OLED are still effective in the present embodiment,
In order to reduce repetition, repeat no more here.Correspondingly, the related skill mentioned in present embodiment
Art details is also applicable in the embodiment of above-mentioned OLED.
Embodiment three：
Invention additionally discloses a kind of display device, including a kind of OLED devices of above-described embodiment
Part.
To sum up, the invention discloses a kind of OLED and preparation method thereof, display device,
By setting organic photoresist layer between contact insulation layer and second metal layer, organic photoresistance is utilized
High viscosity property fill the cracking part of contact insulation layer, reach insulation the first metal layer and
The purpose of second metal layer, makes image element circuit normal work.And form organic photoresist layer and shape
Identical light shield is used into contact insulation layer, extra light shield expense is not produced；While high pixel
Product process stability strengthens, and then improves product yield.
It should be appreciated by those skilled in the art that those skilled in the art combine prior art and
Above-described embodiment can realize change case, will not be described here.Such change case has no effect on
The substantive content of the present invention, will not be described here.
Presently preferred embodiments of the present invention is described above.It is to be appreciated that of the invention
Above-mentioned particular implementation is not limited to, wherein the equipment and structure be not described in detail to the greatest extent should
It is interpreted as being practiced with the common mode in this area；It is any to be familiar with those skilled in the art
Member, without departing from the scope of the technical proposal of the invention, all using the method for the disclosure above
Many possible variations and modification are made to technical solution of the present invention with technology contents, or are revised as
The equivalent embodiment of equivalent variations, this has no effect on the substantive content of the present invention.Therefore, it is every
Without departing from the content of technical solution of the present invention, the technical spirit according to the present invention is to above example
Any simple modifications, equivalents, and modifications done, still fall within technical solution of the present invention guarantor
In the range of shield.
Claims (12)
1. a kind of OLED, it is characterised in that including：
The first metal layer；
Contact insulation layer, is arranged on the first metal layer；
Second metal layer, is arranged on the contact insulation layer；
Wherein, it is additionally provided with cohesive material between the second metal layer and the contact insulation layer
Layer, the viscous material layer is to when the contact insulation layer produces slight crack, by the viscosity
Material layer fills the slight crack.
2. OLED as claimed in claim 1, it is characterised in that the sticky material
The bed of material includes organic photoresist layer.
3. OLED as claimed in claim 2, it is characterised in that organic light
The thickness of resistance layer is 0.1~2 μm.
4. OLED as claimed in claim 2, it is characterised in that the sticky material
The bed of material also includes diaphragm, and the diaphragm is located on organic photoresist layer.
5. OLED as claimed in claim 4, it is characterised in that the diaphragm
Material be tin indium oxide or silica.
6. OLED as claimed in claim 4, it is characterised in that the diaphragm
Thickness be 20~50nm.
7. OLED as claimed in claim 1, it is characterised in that also include：
Substrate；
Polysilicon layer, is arranged on the substrate；
Insulation material layer, is arranged between the polysilicon layer and the first metal layer；
Wherein, through hole is provided with the insulation material layer, the first metal layer passes through described
Through hole is electrically connected with the polysilicon layer.
8. a kind of preparation method of OLED, it is characterised in that including：
One substrate is provided；
Polysilicon layer is formed on the substrate；
The insulation material layer with through hole is formed on the polysilicon layer；
The first metal layer is formed on the insulation material layer, leads to the first metal layer
The through hole crossed on the insulation material layer is electrically connected with the polysilicon layer；
Contact insulation layer is formed on the first metal layer；
Viscous material layer is formed on the contact insulation layer, the viscous material layer is to work as
When the contact insulation layer produces slight crack, the slight crack is filled by the viscous material layer；And
Second metal layer is formed on the viscous material layer.
9. the preparation method of OLED as claimed in claim 8, it is characterised in that
Being set forth on the contact insulation layer the step of forming viscous material layer includes：In the contact
Organic photoresist layer is formed on insulating barrier.
10. the preparation method of OLED as claimed in claim 9, it is characterised in that
Being set forth on the contact insulation layer the step of forming viscous material layer also includes：Have described
Diaphragm is formed on machine photoresist layer.
11. the preparation method of OLED structure as claimed in claim 7, it is characterised in that
Form the step of viscous material layer is with forming the contact insulation layer and use identical light shield.
12. a kind of display device, it is characterised in that including as described in claim 1-7
OLED.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610096828.0A CN107104196B (en) | 2016-02-22 | 2016-02-22 | A kind of OLED device and preparation method thereof, display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610096828.0A CN107104196B (en) | 2016-02-22 | 2016-02-22 | A kind of OLED device and preparation method thereof, display device |
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| CN107104196A true CN107104196A (en) | 2017-08-29 |
| CN107104196B CN107104196B (en) | 2019-03-26 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108242507A (en) * | 2016-12-26 | 2018-07-03 | 上海和辉光电有限公司 | A kind of semiconductor devices and preparation method thereof, display device |
| CN110444546A (en) * | 2018-05-04 | 2019-11-12 | 上海和辉光电有限公司 | Drive backboard and its manufacturing method |
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| CN103413898A (en) * | 2013-08-29 | 2013-11-27 | 深圳市华星光电技术有限公司 | Organic light emitting diode anode connecting structure and manufacturing method thereof |
| CN204945589U (en) * | 2015-10-14 | 2016-01-06 | 信利半导体有限公司 | A kind of array base palte and display device |
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2016
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| US20030003650A1 (en) * | 2001-06-30 | 2003-01-02 | Chang-Rock Song | Method for fabricating capacitor containing zirconium oxide dielectric layer |
| CN1828852A (en) * | 2006-03-20 | 2006-09-06 | 友达光电股份有限公司 | Thin film transistor and manufacturing method thereof |
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| CN107104196B (en) | 2019-03-26 |
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Address after: 201506, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co., Ltd Address before: 201506, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: EverDisplay Optronics (Shanghai) Ltd. |
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