CN107104196B - A kind of OLED device and preparation method thereof, display device - Google Patents
A kind of OLED device and preparation method thereof, display device Download PDFInfo
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- CN107104196B CN107104196B CN201610096828.0A CN201610096828A CN107104196B CN 107104196 B CN107104196 B CN 107104196B CN 201610096828 A CN201610096828 A CN 201610096828A CN 107104196 B CN107104196 B CN 107104196B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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Abstract
The present invention relates to display technology fields, more particularly to a kind of OLED device and preparation method thereof, display device, by the way that organic photoresist layer is arranged between contact insulation layer and second metal layer, the cracking part of contact insulation layer is filled using the high viscosity property of organic photoresist, achieve the purpose that insulate the first metal layer and second metal layer, works normally pixel circuit.And form organic photoresist layer and form contact insulation layer using identical light shield, additional light shield expense is not generated；High pixel product process stability enhancing simultaneously, and then improve product yield.
Description
Technical field
The present invention relates to display technology fields more particularly to a kind of OLED device and preparation method thereof, display device.
Background technique
Active matrix organic light-emitting diode (Active-matrix organic light emitting diode, letter
Claim AMOLED) it is a kind of mainly using organic semiconductor and luminescent material under electric field driven, it is injected by carrier and compound
And luminous panel.Compared with traditional LC D, AMOLED display screen has fast response time, wide colour gamut, high contrast, spontaneous
The advantages of light and more low-power consumption.
However in existing OLED device, formed at contact insulation layer (Contact Layer, abbreviation CT Layer)
Afterwards, because laminated construction stress release problem causes contact insulation layer at Hole (through-hole) edge there is a phenomenon where cracking, thus nothing
Method keeps good insulating performance, and then pixel (Pixel) circuit actual functional capability is caused to fail, and influences the performance of product, this is this
What field technical staff did not expected to see.
Summary of the invention
In view of the above problems, the invention discloses a kind of OLED device, comprising:
The first metal layer (Metal Layer-1)；
Contact insulation layer is arranged on the first metal layer；
Second metal layer (Metal Layer-2) is arranged on the contact insulation layer；
Wherein, viscous material layer, the viscosity material are additionally provided between the second metal layer and the contact insulation layer
The bed of material is to fill the slight crack by the viscous material layer when the contact insulation layer generates slight crack.
Above-mentioned OLED device, wherein the viscous material layer includes organic photoresist layer.
Above-mentioned OLED device, wherein organic photoresist layer with a thickness of 0.1~2 μm.
Above-mentioned OLED device, wherein the viscous material layer further includes protective film, and the protective film has positioned at described
On machine photoresist layer.
Above-mentioned OLED device, wherein the material of the protective film is tin indium oxide (ITO) or silica (SiO).
Above-mentioned OLED device, wherein the protective film with a thickness of 20~50nm.
Above-mentioned OLED device, wherein further include:
Substrate；
Polysilicon layer (poly silicon), is set on the substrate；
Insulation material layer (insulator), is set between the polysilicon layer and the first metal layer；
Wherein, through-hole is provided in the insulation material layer, the first metal layer passes through the through-hole and the polycrystalline
Silicon layer electrical connection.
The invention also discloses a kind of preparation methods of OLED device, comprising:
One substrate is provided；
Polysilicon layer is formed on the substrate；
The insulation material layer with through-hole is formed on the polysilicon layer；
The first metal layer is formed on the insulation material layer；
Contact insulation layer is formed on the first metal layer；
Viscous material layer is formed on the contact insulation layer, the viscous material layer is to work as the contact insulation layer
When generating slight crack, the slight crack is filled by the viscous material layer；And
Second metal layer is formed on the viscous material layer.
The preparation method of above-mentioned OLED device, wherein the step of viscous material layer is formed on Yu Suoshu contact insulation layer
It suddenly include: that organic photoresist layer is formed on the contact insulation layer.
The preparation method of above-mentioned OLED device, wherein the step of viscous material layer is formed on Yu Suoshu contact insulation layer
Suddenly further include: form protective film on organic photoresist layer.
The preparation method of above-mentioned OLED device, wherein form the viscous material layer and form the contact insulation layer
The step of use identical light shield.
Invention additionally discloses a kind of display devices, including above-mentioned OLED device.
Foregoing invention is with the following advantages or beneficial effects:
The invention discloses a kind of OLED device and preparation method thereof, display device, by contact insulation layer and second
Organic photoresist layer is set between metal layer, the cracking part of contact insulation layer is filled using the high viscosity property of organic photoresist,
Achieve the purpose that insulate the first metal layer and second metal layer, works normally pixel circuit.And formed organic photoresist layer and
It forms contact insulation layer and uses identical light shield, do not generate additional light shield expense；High pixel product process stability increases simultaneously
By force, and then product yield is improved.
Detailed description of the invention
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, the present invention and its feature, outer
Shape and advantage will become more apparent.Identical label indicates identical part in all the attached drawings.Not can according to than
Example draws attached drawing, it is preferred that emphasis is shows the gist of the present invention.
Fig. 1 is the schematic diagram of OLED device in the embodiment of the present invention；
Fig. 2 is the method flow diagram that OLED device is prepared in the embodiment of the present invention.
Specific embodiment
The present invention is further illustrated with specific embodiment with reference to the accompanying drawing, but not as limit of the invention
It is fixed.
The present invention relates to thin film transistor (TFT) (TFT) array substrate or IGZO (Indium Gallium Zinc Oxide, indiums
Gallium zinc oxide)/LTPS (Low Temperature Poly Silicon, low temperature polycrystalline silicon)/AMOLED substrate.Mainly exist
It is organic by being increased newly on contact insulation layer after contact insulation layer is formed in high pixel/high-res product design and production
Photoresist layer come solve the problems, such as to cause because of laminated construction stress release contact insulation layer part crack, and cannot keep it is good absolutely
The problem of edge performance, with the metal up and down that achievees the purpose that insulate.
Embodiment one:
As shown in Figure 1, the present embodiment is related to a kind of OLED device, the OLED device include according to sequence from bottom to up according to
Substrate 1, polysilicon layer 2, the insulation material layer 3 of secondary setting, the first metal layer 4, contact insulation layer 5, viscous material layer 6 and
Two metal layers 7；Wherein, be formed with through-hole 31 in insulation material layer 3, and the first metal layer 4 cover the side wall of the through-hole 31 with
And bottom, and contacted by the through-hole 31 with the formation of polysilicon layer 2.In an embodiment of the present invention, in second metal layer 7 and connecing
The purpose that viscous material layer 6 is arranged between touching insulating layer 5 is when contact insulation layer 5 occurs because of laminated construction stress release problem
When cracking generates slight crack or crack, to fill the slight crack or crack, and then 7 shape of the first metal layer 4 and second metal layer is avoided
At electrical contact.It shows edge of the contact insulation layer 5 below through-hole 31 in Fig. 1 to be cracked, but due to viscous material layer 6
Filling, can be very good keep insulation performance so that the first metal layer 4 and second metal layer 7 are insulated from each other, and then make pixel
Circuit is worked normally, it is preferred that the viscous material layer 6 is the material with high viscosity property, preferably to play insulation
The effect of the first metal layer 4 and second metal layer 7.
In a preferred embodiment of the invention, above-mentioned viscous material layer 6 includes organic photoresist layer.
In a preferred embodiment of the invention, above-mentioned organic photoresist layer with a thickness of 0.1 μm -2 μm (such as 0.1 μm,
0.5 μm, 1 μm or 2 μm etc.).
On this basis, further, above-mentioned viscous material layer 6 further includes the protective film on organic photoresist layer
(organic photoresist layer and protective film are not indicated in figure).
In a preferred embodiment of the invention, the material of said protection film is tin indium oxide or silica.
In a preferred embodiment of the invention, said protection film with a thickness of 20~50nm (such as 20nm, 30nm,
40nm or 50nm etc.).
Embodiment two:
As shown in Fig. 2, the present embodiment is related to a kind of preparation method of OLED device, this method specifically comprises the following steps:
Step S1 provides a substrate, it is preferred that the substrate is glass substrate.
Step S2, forms polysilicon layer on substrate, and the technique for forming the polysilicon layer can use art technology
Technology known to personnel, just it will not go into details herein.
Step S3 forms the insulation material layer with through-hole on polysilicon layer, specifically, sinking on polysilicon layer
One layer of insulating materials of product, performs etching the insulation material layer with through-hole that form this to insulating materials using photoetching process later,
Briefly, the preparation flow of the insulation material layer is film forming -> coating photoresist -> exposure -> development -> etching -> removing.
Step S4, formed the first metal layer with by the side wall of the upper surface of insulation material layer, through-hole and by through-hole it is sudden and violent
The upper surface of the polysilicon layer of dew is covered, specifically, depositing one layer of metal material on insulation material layer, is adopted later
It is aligned with photoetching process and is performed etching in the metal material in through-hole, so that being located at the side wall of through-hole and its metal material of bottom
Material is suitable with the metal material thickness of upper surface of insulation material layer is located at, and remaining metal material forms the first metal layer；
In an embodiment of the present invention, the part of the surface of the first metal layer is directly in contact with polysilicon layer.
The step of step S5, forms contact insulation layer on the first metal layer, forms the contact insulation layer can use
Not step known to the technical staff of field, just it will not go into details herein.
Step S6, forms viscous material layer on contact insulation layer, in a preferred embodiment of the invention, in connecing
Touch the step of viscous material layer is formed on insulating layer specifically: it is formed on contact insulation layer after organic photoresist layer, and in
Protective film is formed on organic photoresist layer；I.e. the viscous material layer includes organic light group layer and on organic light group layer
Protective film.Specifically, the step of forming organic photoresist layer are as follows: be coated with organic photoresist -> exposure -> development -> baking -> at
Film -> coating photoresist -> exposure -> development -> etching -> removing.
In a preferred embodiment of the invention, above-mentioned viscous material layer with a thickness of 0.1 μm -2 μm (such as 0.1 μm,
0.5 μm, 1 μm or 2 μm etc.).
In a preferred embodiment of the invention, the material of said protection film is tin indium oxide or silica.
In a preferred embodiment of the invention, said protection film with a thickness of 20nm-50nm (such as 20nm, 30nm,
40nm or 50nm etc.).
In a preferred embodiment of the invention, forms viscous material layer and form contact insulation layer using identical light
Cover, specifically, forming organic photoresist layer and protective film can use identical light shield with contact insulation layer is formed, to will not produce
Raw additional light shield expense.
Step S7, forms second metal layer on viscous material layer, forms the technique and the first gold medal of the second metal layer
It is identical to belong to layer, in order to reduce repetition, is not just repeated herein.
In an embodiment of the present invention, if contact insulation layer occurs because of laminated construction stress release problem or other problems
Cracking generates slight crack or crack, but the filling due to viscous material layer to the slight crack or crack, still can be very good to keep insulation
Performance so that the first metal layer and second metal layer are insulated from each other, and then enables pixel circuit to work normally,
It is not difficult to find that the present embodiment is embodiment of the method corresponding with the embodiment of above-mentioned OLED device, the present embodiment
Can work in coordination implementation with the embodiment of above-mentioned OLED device.The relevant technical details mentioned in the embodiment of above-mentioned OLED device
Still effectively in the present embodiment, in order to reduce repetition, which is not described herein again.Correspondingly, the correlation mentioned in present embodiment
Technical detail is also applicable in the embodiment of above-mentioned OLED device.
Embodiment three:
Invention additionally discloses a kind of display device, the OLED device including above-described embodiment one kind.
To sum up, the invention discloses a kind of OLED device and preparation method thereof, display device, by contact insulation layer and
Organic photoresist layer is set between second metal layer, the cracking unit of contact insulation layer is filled using the high viscosity property of organic photoresist
Point, achieve the purpose that insulate the first metal layer and second metal layer, works normally pixel circuit.And form organic photoresist layer
Identical light shield is used with contact insulation layer is formed, does not generate additional light shield expense；High pixel product process stability simultaneously
Enhancing, and then improve product yield.
It should be appreciated by those skilled in the art that those skilled in the art are combining the prior art and above-described embodiment can be with
Realize change case, this will not be repeated here.Such change case does not affect the essence of the present invention, and it will not be described here.
Presently preferred embodiments of the present invention is described above.It is to be appreciated that the invention is not limited to above-mentioned
Particular implementation, devices and structures not described in detail herein should be understood as gives reality with the common mode in this field
It applies；Anyone skilled in the art, without departing from the scope of the technical proposal of the invention, all using the disclosure above
Methods and technical content many possible changes and modifications are made to technical solution of the present invention, or be revised as equivalent variations etc.
Embodiment is imitated, this is not affected the essence of the present invention.Therefore, anything that does not depart from the technical scheme of the invention, foundation
Technical spirit of the invention any simple modifications, equivalents, and modifications made to the above embodiment, still fall within the present invention
In the range of technical solution protection.
Claims (11)
1. a kind of OLED device characterized by comprising
The first metal layer；
Contact insulation layer is arranged on the first metal layer；
Second metal layer is arranged on the contact insulation layer；
Wherein, viscous material layer, the viscous material layer are additionally provided between the second metal layer and the contact insulation layer
To fill the slight crack by the viscous material layer when the contact insulation layer generates slight crack；
Further include:
Substrate；
Polysilicon layer is set on the substrate；
Insulation material layer is set between the polysilicon layer and the first metal layer；
Wherein, through-hole is provided in the insulation material layer, the first metal layer passes through the through-hole and the polysilicon layer
Electrical connection.
2. OLED device as described in claim 1, which is characterized in that the viscous material layer includes organic photoresist layer.
3. OLED device as claimed in claim 2, which is characterized in that organic photoresist layer with a thickness of 0.1~2 μm.
4. OLED device as claimed in claim 2, which is characterized in that the viscous material layer further includes protective film, and described
Protective film is located on organic photoresist layer.
5. OLED device as claimed in claim 4, which is characterized in that the material of the protective film is tin indium oxide or oxidation
Silicon.
6. OLED device as claimed in claim 4, which is characterized in that the protective film with a thickness of 20~50nm.
7. a kind of display device, which is characterized in that including the OLED device as described in claim 1-6 is any.
8. a kind of preparation method of OLED device characterized by comprising
One substrate is provided；
Polysilicon layer is formed on the substrate；
The insulation material layer with through-hole is formed on the polysilicon layer；
The first metal layer is formed on the insulation material layer, passes through the first metal layer on the insulation material layer
Through-hole and the polysilicon layer are electrically connected；
Contact insulation layer is formed on the first metal layer；
Viscous material layer is formed on the contact insulation layer, the viscous material layer when the contact insulation layer to generate
When slight crack, the slight crack is filled by the viscous material layer；And
Second metal layer is formed on the viscous material layer.
9. the preparation method of OLED device as claimed in claim 8, which is characterized in that be set forth on the contact insulation layer
The step of forming viscous material layer includes: that organic photoresist layer is formed on the contact insulation layer.
10. the preparation method of OLED device as claimed in claim 9, which is characterized in that be set forth in the contact insulation layer it
The step of upper formation viscous material layer further include: form protective film on organic photoresist layer.
11. the preparation method of OLED device structure as claimed in claim 8, which is characterized in that formed the viscous material layer with
The step of forming the contact insulation layer uses identical light shield.
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| CN201610096828.0A CN107104196B (en) | 2016-02-22 | 2016-02-22 | A kind of OLED device and preparation method thereof, display device |
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| CN201610096828.0A CN107104196B (en) | 2016-02-22 | 2016-02-22 | A kind of OLED device and preparation method thereof, display device |
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| CN107104196B true CN107104196B (en) | 2019-03-26 |
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| CN108242507B (en) * | 2016-12-26 | 2020-02-21 | 上海和辉光电有限公司 | Semiconductor device, preparation method thereof and display device |
| CN110444546B (en) * | 2018-05-04 | 2021-12-07 | 上海和辉光电股份有限公司 | Driving back plate and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1828852A (en) * | 2006-03-20 | 2006-09-06 | 友达光电股份有限公司 | Thin film transistor and manufacturing method thereof |
| CN103413898A (en) * | 2013-08-29 | 2013-11-27 | 深圳市华星光电技术有限公司 | Organic light emitting diode anode connecting structure and manufacturing method thereof |
| CN204945589U (en) * | 2015-10-14 | 2016-01-06 | 信利半导体有限公司 | A kind of array base palte and display device |
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| KR100406549B1 (en) * | 2001-06-30 | 2003-11-22 | 주식회사 하이닉스반도체 | Method for fabricating capacitor having zirconium oxide |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1828852A (en) * | 2006-03-20 | 2006-09-06 | 友达光电股份有限公司 | Thin film transistor and manufacturing method thereof |
| CN103413898A (en) * | 2013-08-29 | 2013-11-27 | 深圳市华星光电技术有限公司 | Organic light emitting diode anode connecting structure and manufacturing method thereof |
| CN204945589U (en) * | 2015-10-14 | 2016-01-06 | 信利半导体有限公司 | A kind of array base palte and display device |
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Address after: 201506, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co., Ltd Address before: 201506, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: EverDisplay Optronics (Shanghai) Ltd. |
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