CN107093665B - A kind of piezoelectric thin film transducer WSiAlN film and preparation method thereof - Google Patents
A kind of piezoelectric thin film transducer WSiAlN film and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
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Abstract
The present invention provides a kind of piezoelectric thin film transducer WSiAlN film and preparation method thereof, piezoelectric thin film transducer WSiAlN film includes hearth electrode and the piezoelectric membrane on hearth electrode, hearth electrode is made of WSi material, and piezoelectric membrane is made of AlN material.Hearth electrode is made by using WSi material in the present invention, it is set under AlN piezoelectric membrane, the c-axis orientation of piezoelectric membrane can be improved, reduce stress, meet the requirement of piezoelectric thin film transducer composite film material, thus composite film material structural unit (i.e. WSiAlN film) provided by the invention can be used as Thin Films unit novel in piezoelectric thin film transducer and use.
Description
Technical field
The invention belongs to core component-pressures of the bulk acoustic wave devices such as thin-film bulk acoustic wave filter, bulk acoustic microwave delay line
A kind of conductive film field of transducer, and in particular to piezoelectric thin film transducer WSiAlN film and preparation method thereof.
Background technique
The core of the bulk acoustic wave devices such as film bulk acoustic wave device, bulk acoustic microwave delay line is piezoelectric membrane transducing
Device.Bulk acoustic wave piezoelectric thin film transducer is made of hearth electrode, piezoelectric membrane and top electrode, and hearth electrode and piezoelectric membrane are that piezoelectricity is thin
The key of film transducer production.Aluminium nitride (AlN) piezoelectric membrane is since it is with broad-band gap, high-breakdown-voltage, the high velocity of sound, high
Electromechanical coupling factor becomes the preferred material of production piezoelectric thin film transducer.In general, AlN film answering in piezoelectric device
With mostly based on (002) face of c-axis, therefore it is required that its structure for producing AlN film need to have good c-axis preferred orientation,
Composition is uniform, lower stress, and surface roughness is small.High c-axis orientation AlN film is obtained, is changed for preparation high quality piezoelectric membrane
Energy device is laid a good foundation, but fine or not only related to technique itself, the piezoelectric thin film transducer of AlN piezoelectric membrane c-axis orientation
Bottom electrode layer is also to influence a key factor of piezoelectric layer c-axis orientation.Electrode material for piezoelectric thin film transducer
Selection criteria is to require material to have low-density, low resistance and higher acoustic impedance, while electrode material being required to can guarantee pressure
Conductive film being capable of c-axis preferential growth on the electrode.Since tungsten (W) and AlN film have crystallization compatibility, be conducive to AlN film c
Axis preferential growth, therefore be to realize the common electrode material of piezoelectric thin film transducer.But using W as hearth electrode, W film is answered
Power is not easily controlled, and the piezoelectric membrane grown on it still has c-axis and is orientated poor, the larger problem of stress.
Summary of the invention
The present invention provides a kind of piezoelectric thin film transducer WSiAlN film and preparation method thereof, to solve to use tungsten at present
W is not easily controlled as hearth electrode, W film stress, the piezoelectric membrane grown on it there are c-axis orientation it is poor, stress is larger
The problem of.
According to a first aspect of the embodiments of the present invention, a kind of piezoelectric thin film transducer WSiAlN film, including bottom are provided
Electrode and the piezoelectric membrane on the hearth electrode, the hearth electrode are made of WSi material, and the piezoelectric membrane uses
AlN material is made.
In an optional implementation manner, the molar ratio of W and Si is 1:2~1:2.7 in the WSi material.
In another optional implementation, the molar ratio with W and Si in the WSi material increases step by step, institute
The stress for stating piezoelectric thin film transducer WSiAlN film will increase and be difficult to control, and in the WSi material, W and Si rubs
You are gradually reduced ratio, and the resistivity of piezoelectric thin film transducer WSi film will increase.
According to a second aspect of the embodiments of the present invention, a kind of preparation of piezoelectric thin film transducer WSiAlN film is also provided
Method, comprising:
Hearth electrode is made on silicon wafer using WSi material；
Piezoelectric membrane is made on the hearth electrode using AlN material.
In an optional implementation manner, the molar ratio of W and Si is 1:2~1:2.7 in the WSi material.
In another optional implementation, it includes: use that hearth electrode, which is made, in the use WSi material on silicon wafer
Hearth electrode is made in WSi material magnetically controlled DC sputtering on silicon wafer, wherein the manufacture craft parameter of magnetically controlled DC sputtering are as follows: sputtering function
Rate is 2000~4000W, 35~55sccm of argon flow, back side argon flow 15sccm.
It is described that piezoelectric membrane packet is made on the hearth electrode using AlN material in another optional implementation
It includes: exchanging magnetron sputtering on the hearth electrode using AlN material and piezoelectric membrane is made, wherein the system of the AC magnetic controlled sputtering
Make technological parameter are as follows: sputtering power is 3000~6500w, argon flow is 4~12sccm, nitrogen flow is 10~30sccm.
In another optional implementation, after hearth electrode is made on silicon wafer in the use WSi material, also wrap
Annealing steps are included, wherein the technological parameter of the annealing steps are as follows: the short annealing 30~90 seconds at a high temperature of 600~900 DEG C.
In another optional implementation, in the magnetically controlled DC sputtering, AC magnetic controlled sputtering and annealing steps,
Respectively correspond while increasing the value of each technological parameter in corresponding value range, then the c-axis of the piezoelectric membrane be orientated by
Gradual change is good, and stress gradually becomes smaller；But after increasing to default value with each technological parameter of correspondence, the c-axis of the piezoelectric membrane
Orientation is gradually deteriorated, and stress becomes larger.
In another optional implementation, when sputtering power is 3000W, argon flow in the magnetically controlled DC sputtering
45sccm, back side argon flow 15sccm, in the AC magnetic controlled sputtering sputtering power be 5000W, argon flow 8sccm,
Nitrogen flow is 20sccm, in the annealing steps at a high temperature of 800 DEG C at short annealing 60 seconds, the piezoelectric membrane transducing
The c-axis orientation of device WSiAlN film is best, and stress is minimum.
The beneficial effects of the present invention are:
1, hearth electrode is made by using WSi material in the present invention, is set under AlN piezoelectric membrane, AlN piezoelectricity can be improved
The c-axis of film is orientated, and is reduced stress, is met the requirement of piezoelectric thin film transducer composite film material, and thus the present invention provides
Composite film material structural unit (i.e. WSiAlN film) can be used as thin-film material knot novel in piezoelectric thin film transducer
Structure unit uses；
2, it by the present invention in that the molar ratio of W and Si is 1:2~1:2.7 in the WSi material, can not reduce
Under the premise of other performance parameters of WSiAlN film, guarantee that the c-axis orientation of piezoelectric membrane is improved, and its stress is dropped
It is low；
3, the present invention prepares WSi hearth electrode by using the mode of magnetically controlled DC sputtering, and using AC magnetic controlled sputtering
Mode prepares AlN piezoelectric membrane, it is ensured that the resistivity for the WSi film prepared is in a moderate value range；
In addition, the present invention is defined by the value range to technological parameter each in magnetically controlled DC sputtering, and splashed to AC magnetic controlled
The value range for hitting each technological parameter is defined, it is ensured that the c-axis for the WSiAlN film prepared is orientated and stress
In the value range moderate in one.
Detailed description of the invention
Fig. 1 is one embodiment side view of piezoelectric thin film transducer WSiAlN film of the present invention；
Fig. 2 is one embodiment flow chart of the preparation method of piezoelectric thin film transducer WSiAlN film of the present invention；
Fig. 3 is the rocking curve figure of embodiment 1 in piezoelectric thin film transducer WSiAlN film of the present invention；
Fig. 4 is the rocking curve figure of embodiment 2 in piezoelectric thin film transducer WSiAlN film of the present invention；
Fig. 5 is the rocking curve figure of embodiment 3 in piezoelectric thin film transducer WSiAlN film of the present invention；
Fig. 6 is the stress test result signal of three embodiments in piezoelectric thin film transducer WSiAlN film of the present invention
Figure；
Fig. 7 is the roughness test result signal of three embodiments in piezoelectric thin film transducer WSiAlN film of the present invention
Figure；
Fig. 8 is the AFM figure of embodiment 1 in piezoelectric thin film transducer WSiAlN film of the present invention；
Fig. 9 is the AFM figure of embodiment 2 in piezoelectric thin film transducer WSiAlN film of the present invention；
Figure 10 is the AFM figure of embodiment 3 in piezoelectric thin film transducer WSiAlN film of the present invention.
Specific embodiment
Technical solution in embodiment in order to enable those skilled in the art to better understand the present invention, and make of the invention real
The above objects, features, and advantages for applying example can be more obvious and easy to understand, with reference to the accompanying drawing to technical side in the embodiment of the present invention
Case is described in further detail.
In the description of the present invention, unless otherwise specified and limited, it should be noted that term " connection " should do broad sense reason
Solution, for example, it may be mechanical connection or electrical connection, the connection being also possible to inside two elements can be directly connected, it can also
Indirectly connected through an intermediary, for the ordinary skill in the art, can understand as the case may be above-mentioned
The concrete meaning of term.
In the embodiment of the present invention, through applicants have found that, when making AlN piezoelectric membrane use tungsten silicon (WSi) material
Hearth electrode is made, AlN piezoelectric membrane can be made to be orientated with better c-axis, lower stress.Therefore, as shown in Figure 1, this hair
It is bright that a kind of piezoelectric thin film transducer WSiAlN film is provided, may include hearth electrode 110 and be located at the hearth electrode 110 on
Piezoelectric membrane 120, which is made of WSi material, and piezoelectric membrane 120 is made of AlN material, it is possible thereby to
The c-axis orientation for improving piezoelectric membrane, reduces its stress.In addition, through applicants have found that, when the WSi material that hearth electrode is made
When the molar ratio of middle tungsten W and silicon Si is within the scope of 1:2~1:2.7, the c-axis orientation of piezoelectric membrane is incited somebody to action in the WSiAlN film
To raising, and stress will be reduced, but (i.e. the composition of W contains as the molar ratio of W and Si in WSi material increases step by step
Amount increases or the composition content of Si reduces), the stress of the WSiAlN film will increase and be difficult to control, with W in WSi material
(i.e. the constituent content of W reduces or the constituent content of Si increases), the resistance of the WSi film are gradually reduced with the molar ratio of Si
Rate will increase, to be unfavorable for for the WSiAlN film being applied in piezoelectric thin film transducer.Wherein, WSi resistivity is about 80 μ
Ω·cm。
As seen from the above-described embodiment, hearth electrode is made by using WSi material in the present invention, is set under AlN piezoelectric membrane,
The c-axis orientation that AlN piezoelectric membrane can be improved, reduces stress, meets the requirement of piezoelectric thin film transducer composite film material,
Thus composite film material structural unit (i.e. WSiAlN film) provided by the invention can be used as new in piezoelectric thin film transducer
The Thin Films unit of type uses.
In addition, the present invention also provides a kind of piezoelectric thin film transducer preparation methods of WSiAlN film, as shown in Fig. 2,
It may comprise steps of:
Step S201, hearth electrode is made on silicon wafer using WSi material.
In the present embodiment, the molar ratio of W and Si is 1:2~1:2.7 in the WSi material, it is possible thereby to guarantee piezoelectricity
The c-axis orientation of film is improved, and its stress is reduced.Wherein, this using WSi material hearth electrode is made on silicon wafer can
To include:
Using WSi material, hearth electrode is made in magnetically controlled DC sputtering on silicon wafer, wherein the manufacture craft of magnetically controlled DC sputtering
Parameter are as follows: sputtering power is 2000~4000W, 35~55sccm of argon flow, back side argon flow 15sccm.The present invention passes through
WSi hearth electrode is prepared by the way of magnetically controlled DC sputtering, it is ensured that the resistivity for the WSi film prepared is in one
In moderate value range.In addition, through applicants have found that, when each technological parameter of magnetically controlled DC sputtering is in corresponding value
When except range, the metal strength of the WSi film will be deteriorated, therefore the present invention is by joining technique each in magnetically controlled DC sputtering
Several value ranges are defined, it is ensured that the metal strength for the WSi film prepared is in a moderate value range.
It can also include annealing steps after hearth electrode is made on silicon wafer in the use WSi material, wherein described move back
The technological parameter of fiery step are as follows: the short annealing 30~90 seconds at a high temperature of 600~900 DEG C.The present invention by hearth electrode with
Annealing steps are set between piezoelectric membrane preparation step, the resistivity of WSi film can be reduced.
Step S202, piezoelectric membrane is made on hearth electrode using AlN material.
In the present embodiment, the use AlN material is made piezoelectric membrane on the hearth electrode and may include:
Magnetron sputtering is exchanged on the hearth electrode using AlN material, piezoelectric membrane is made, AC magnetic controlled splashed wherein described
The manufacture craft parameter penetrated are as follows: sputtering power is 3000~6500w, argon flow is 4~12sccm, nitrogen flow be 10~
30sccm.The present invention prepares AlN piezoelectric membrane by using the mode of AC magnetic controlled sputtering, it is ensured that the piezoelectricity prepared is thin
Film c-axis orientation and stress are in a moderate value range.In addition, through applicants have found that, when AC magnetic controlled sputtering
When except corresponding value range, piezoelectric membrane c-axis orientation and stress will be deteriorated each technological parameter, therefore the present invention passes through
The value range of each technological parameter in AC magnetic controlled sputtering is defined, it is ensured that the piezoelectric membrane c-axis prepared takes
It is in a moderate value range to stress.
In addition, through applicants have found that, the magnetically controlled DC sputtering, it is AC magnetic controlled sputtering and annealing steps in,
The value of each technological parameter is respectively corresponded while increased in corresponding value range, then the c-axis of the piezoelectric membrane is orientated gradually
Improve, stress gradually becomes smaller；But after increasing to default value with each technological parameter of correspondence, the c-axis of the piezoelectric membrane is taken
To being gradually deteriorated, stress is become larger.Illustrate the variation with technological parameter below with three embodiments, piezoelectric membrane is every
The changing rule of performance.
Embodiment 1
1) magnetically controlled DC sputtering makes WSi hearth electrode, manufacture craft: sputtering power 2000w, argon flow on silicon wafer
35sccm, back side argon flow 15sccm.
2) short annealing 30 seconds at a high temperature of 600 DEG C.
3) it is exchanged under the process conditions that sputtering power is 3000w, argon flow 4sccm, nitrogen flow are 10sccm
Magnetron sputtering makes AlN piezoelectric membrane.
4) rocking curve of AlN piezoelectric membrane on the print is tested, as shown in Figure 3.
5) stress of AlN piezoelectric membrane on the print is tested.
6) roughness of AlN piezoelectric membrane on the print is tested.
Embodiment 2
1) magnetically controlled DC sputtering makes WSi hearth electrode, manufacture craft: sputtering power 3000w, argon flow on silicon wafer
45sccm, back side argon flow 15sccm.
2) short annealing 60 seconds at a high temperature of 800 DEG C.
3) it is exchanged under the process conditions that sputtering power is 5000w, argon flow 8sccm, nitrogen flow are 20sccm
Magnetron sputtering makes AlN piezoelectric membrane.
4) rocking curve of AlN piezoelectric membrane on the print is tested, as shown in Figure 4.
5) stress of AlN piezoelectric membrane on the print is tested.
6) roughness of AlN piezoelectric membrane on the print is tested.
Embodiment 3
1) magnetically controlled DC sputtering makes WSi hearth electrode, manufacture craft: sputtering power 4000w, argon flow on silicon wafer
55sccm, back side argon flow 15sccm.
2) short annealing 90 seconds at a high temperature of 900 DEG C.
3) it is exchanged under the process conditions that sputtering power is 6500w, argon flow 12sccm, nitrogen flow are 30sccm
Magnetron sputtering makes AlN piezoelectric membrane.
4) rocking curve of AlN piezoelectric membrane on the print is tested, as shown in Figure 5.
5) stress of AlN piezoelectric membrane on the print is tested.
6) roughness of AlN piezoelectric membrane on the print is tested.
The stress test result of above three embodiments AlN piezoelectric membrane can with as shown in fig. 6, AlN piezoelectric membrane it is thick
Rugosity test result can be as shown in Figure 7.
As can be seen that nitrogen flow is when sputtering power is 5000w, argon flow 8sccm in from Fig. 3 to Fig. 5
When 20sccm, rocking curve halfwidth (FWHM) is 2.1736 °, has preferable c-axis preferred orientation.From stress test data
As can be seen that stress is -66.37MPa at the process conditions, stress is lower.Surface roughness is measure film quality one
A major criterion, from AFM figure, (wherein Fig. 8 is that the AFM of embodiment 1 schemes, and Fig. 9 is that the AFM of embodiment 2 schemes, and Figure 10 is embodiment 3
AFM figure) in it can be seen that roughness (Rq) be 5.315~5.471nm, roughness is lower, and film surface is smoother, and crystal grain is thin
It is small uniform, it is complete fine and close, it is suitable from 3D figure it can be seen that obtaining being columnar crystal structure without the long big crystal grain of irregular transverse direction
In making devices.When sputtering power is 3000W, argon flow 45sccm, back side argon flow in the magnetically controlled DC sputtering
15sccm, in the AC magnetic controlled sputtering sputtering power be 5000W, argon flow 8sccm, nitrogen flow 20sccm, institute
It states in annealing steps at a high temperature of 800 DEG C at short annealing 60 seconds, the c-axis of piezoelectric thin film transducer WSiAlN film
Orientation is best, and stress is minimum, and roughness is smaller.
As seen from the above-described embodiment, hearth electrode is made by using WSi material in the present invention, is set under AlN piezoelectric membrane,
The c-axis orientation that AlN piezoelectric membrane can be improved, reduces stress, meets the requirement of piezoelectric thin film transducer composite film material,
Thus composite film material structural unit (i.e. WSiAlN film) provided by the invention can be used as new in piezoelectric thin film transducer
The Thin Films unit of type uses.
Those skilled in the art after considering the specification and implementing the invention disclosed here, will readily occur to of the invention its
Its embodiment.This application is intended to cover any variations, uses, or adaptations of the invention, these modifications, purposes or
Person's adaptive change follows general principle of the invention and including the undocumented common knowledge in the art of the present invention
Or conventional techniques.The description and examples are only to be considered as illustrative, and true scope and spirit of the invention are by following
Claim is pointed out.
It should be understood that the present invention is not limited to the precise structure already described above and shown in the accompanying drawings, and
And various modifications and changes may be made without departing from the scope thereof.The scope of the present invention is limited only by the attached claims.
Claims (8)
1. a kind of piezoelectric thin film transducer WSiAlN film, the piezoelectricity including hearth electrode and on the hearth electrode are thin
Film, which is characterized in that the hearth electrode is made of WSi material, and the piezoelectric membrane is made of AlN material, the WSi material
The molar ratio of W and Si is 1:2~1:2.7 in material.
2. piezoelectric thin film transducer according to claim 1 WSiAlN film, which is characterized in that with the WSi material
The molar ratio of W and Si increases step by step in material, and the stress of piezoelectric thin film transducer WSiAlN film will increase and be difficult to
Control, as the molar ratio of W and Si in the WSi material is gradually reduced, the electricity of piezoelectric thin film transducer WSi film
Resistance rate will increase.
3. a kind of piezoelectric thin film transducer preparation method of WSiAlN film characterized by comprising
Hearth electrode is made on silicon wafer using WSi material, wherein the molar ratio of W and Si is 1:2~1 in the WSi material:
2.7；
Piezoelectric membrane is made on the hearth electrode using AlN material.
4. preparation method according to claim 3, which is characterized in that described that bottom electricity is made on silicon wafer using WSi material
Pole includes:
Using WSi material, hearth electrode is made in magnetically controlled DC sputtering on silicon wafer, wherein the manufacture craft parameter of magnetically controlled DC sputtering
Are as follows: sputtering power is 2000~4000W, 35~55sccm of argon flow, back side argon flow 15sccm.
5. the preparation method according to claim 4, which is characterized in that described to be made on the hearth electrode using AlN material
Include: at piezoelectric membrane
Magnetron sputtering is exchanged on the hearth electrode using AlN material, piezoelectric membrane is made, wherein the AC magnetic controlled sputtering
Manufacture craft parameter are as follows: sputtering power is 3000~6500w, argon flow is 4~12sccm, nitrogen flow be 10~
30sccm。
6. preparation method according to claim 5, which is characterized in that bottom is made on silicon wafer using WSi material described
It further include annealing steps after electrode, wherein the technological parameter of the annealing steps are as follows: at a high temperature of 600~900 DEG C quickly
Annealing 30~90 seconds.
7. preparation method according to claim 6, which is characterized in that in the magnetically controlled DC sputtering, AC magnetic controlled sputtering
In annealing steps, the value of each technological parameter is respectively corresponded while increased in corresponding value range, then the piezoelectricity is thin
The c-axis orientation of film gradually improves, and stress gradually becomes smaller；But it is described after increasing to default value with each technological parameter of correspondence
The c-axis orientation of piezoelectric membrane is gradually deteriorated, and stress becomes larger.
8. preparation method according to claim 7, which is characterized in that when sputtering power is in the magnetically controlled DC sputtering
3000W, argon flow 45sccm, back side argon flow 15sccm, sputtering power is 5000W, argon in the AC magnetic controlled sputtering
Throughput is 8sccm, nitrogen flow 20sccm, in the annealing steps at a high temperature of 800 DEG C at short annealing 60 seconds, institute
The c-axis orientation for stating piezoelectric thin film transducer WSiAlN film is best, and stress is minimum.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007119643A1 (en) * | 2006-03-31 | 2007-10-25 | Ube Industries, Ltd. | Film bulk acoustic resonator, piezoelectric thin film device and method for manufacturing the piezoelectric thin film device |
| CN101218662A (en) * | 2005-08-29 | 2008-07-09 | 弗莱堡混合材料股份有限公司 | Semi-conductor substrate and method and masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy |
| CN104364879A (en) * | 2012-03-21 | 2015-02-18 | 弗赖贝格化合物原料有限公司 | Method for producing III-N templates and the reprocessing thereof and III-N template |
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| US9712128B2 (en) * | 2014-02-09 | 2017-07-18 | Sitime Corporation | Microelectromechanical resonator |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101218662A (en) * | 2005-08-29 | 2008-07-09 | 弗莱堡混合材料股份有限公司 | Semi-conductor substrate and method and masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy |
| WO2007119643A1 (en) * | 2006-03-31 | 2007-10-25 | Ube Industries, Ltd. | Film bulk acoustic resonator, piezoelectric thin film device and method for manufacturing the piezoelectric thin film device |
| CN104364879A (en) * | 2012-03-21 | 2015-02-18 | 弗赖贝格化合物原料有限公司 | Method for producing III-N templates and the reprocessing thereof and III-N template |
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