CN107093643A - 一种氮化镓位置灵敏辐射探测器及其制备方法 - Google Patents

一种氮化镓位置灵敏辐射探测器及其制备方法 Download PDF

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CN107093643A
CN107093643A CN201710205623.6A CN201710205623A CN107093643A CN 107093643 A CN107093643 A CN 107093643A CN 201710205623 A CN201710205623 A CN 201710205623A CN 107093643 A CN107093643 A CN 107093643A
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夏晓川
崔兴柱
梁红伟
梁晓华
刘雅清
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Dalian University of Technology
Institute of High Energy Physics of CAS
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Abstract

本发明提供了一种氮化镓位置灵敏辐射探测器及其制备方法，属于半导体器件制备技术领域。探测器以半绝缘氮化镓单晶为衬底，其上依次生长n型氮化镓层、InGaN插入层、高阻氮化镓探测灵敏区、图形化p型氮化镓层和绝缘介质保护层；其中，InGaN插入层的宽度小于n型氮化镓层的宽度，InGaN插入层和高阻氮化镓探测灵敏区的宽度相同；多个图形化p型氮化镓层间隔排布在高阻氮化镓探测灵敏区上，图形化p型氮化镓层上制备上欧姆接触电极，n型氮化镓层上未被覆盖区域制备下欧姆接触电极；图形化p型氮化镓层外部为绝缘介质保护层。本发明解决了高性能氮化镓位置灵敏辐射探测器的制备难题，实现新型氮化镓位置灵敏辐射探测器的研制。

Description

一种氮化镓位置灵敏辐射探测器及其制备方法
技术领域
本发明属于半导体器件制备技术领域，涉及一种基于氮化镓材料的辐射探测器及其制备方法。
背景技术
以氧化镓为代表的第三代宽禁带半导体材料因其禁带宽度大、击穿场强高、电子饱和漂移速度高、耐腐蚀和抗辐照等突出优点，在高频、高功率、抗辐射等电子器件方面具有重要应用。GaN带隙宽度为3.39eV，可以在室温和更高温度下稳定存在，同时具有出色的化学稳定性。另外，GaN耐辐照能力为Si的10000倍，具有更好的耐辐照特性。GaN的密度为6.2g/cm3，对于相同的探测能区，可以将GaN探测器做得更薄，提高探测器的灵敏性。GaN材料理论内禀能量分辨率(@60keV)也可达到0.643keV。GaN的这些优异特性使得其成为制备耐高温、耐辐照探测器的理想材料。然而，目前还未见到制备基于氮化镓材料的位置灵敏辐射探测器的相关报道。主要原因是：1、高质量氮化镓单晶衬底在最近才得以研制成功，2、辐射源所发出的粒子或者射线具有极高的穿透能力，在半导体中的能量沉积率低，产生的信号极小，传统半导体探测器的结构和参数已经不能作为参考，3、氮化镓是一种新型宽带隙半导体，其材料特性与传统半导体不同，需要利用材料特性进行能够实现位置分辨功能的器件结构创新设计。
发明内容
本发明的目的在于，针对上述制备氮化镓位置灵敏辐射探测器过程中所面临的诸多技术难题，提出一种基于氮化镓单晶衬底的新型辐射探测器及其制备方法，器件的结构如图1所示，包括：上接触电极、图形化p型氮化镓层、绝缘介质保护层、高阻氮化镓探测灵敏区、InGaN插入层、n型氮化镓层、下接触电极、半绝缘氮化镓单晶衬底。
本发明的技术方案：
一种氮化镓位置灵敏辐射探测器，所述的氮化镓位置灵敏辐射探测器以半绝缘氮化镓单晶为衬底，其上依次生长n型氮化镓层、InGaN插入层、高阻氮化镓探测灵敏区、图形化p型氮化镓层和绝缘介质保护层；其中，InGaN插入层的宽度小于n型氮化镓层的宽度，InGaN插入层和高阻氮化镓探测灵敏区的宽度相同；多个图形化p型氮化镓层间隔排布在高阻氮化镓探测灵敏区上，图形化p型氮化镓层上制备上欧姆接触电极，n型氮化镓层上未被覆盖区域制备下欧姆接触电极；图形化p型氮化镓层外部为绝缘介质保护层；
所述的绝缘介质护层材料可以是氧化镓、二氧化硅、氮化铝或者氮化硅，其厚度为10nm～100μm；
所述的n型氮化镓层的厚度为100nm～10μm；
所述的InGaN插入层的厚度为10nm～5μm；
所述的高阻氮化镓探测灵敏区的厚度为1μm～500μm；
所述的图形化p型氮化镓层的厚度为10nm～10μm；单个图形化p型氮化镓区域的条宽为100nm～100μm，间距范围为100nm～100μm。
一种氮化镓位置灵敏辐射探测器的制备方法，步骤如下：
步骤1：在半绝缘氮化镓单晶衬底上生长n型氮化镓层；
步骤2：在步骤1所制备的n型氮化镓层上生长InGaN插入层；
步骤3：在步骤2所制备的InGaN插入层上生长高阻氮化镓探测灵敏区；
步骤4：在步骤3所制备的高阻氮化镓探测灵敏区生长p型氮化镓层；
步骤5：对步骤4中制备出的p型氮化镓层利用掩膜进行刻蚀(或腐蚀)图形化处理；
步骤6：在步骤5中制备出的图形化p型氮化镓层上制备绝缘介质保护层；
步骤7：利用掩膜和腐蚀(或刻蚀)技术对p型氮化镓上制备的绝缘介质保护层进行开口处理；
步骤8：利用掩膜、镀膜和剥离技术在每个p型氮化镓开口区域上制备上欧姆接触电极；
步骤9：利用掩膜、刻蚀(或腐蚀)和镀膜技术在n型氮化镓区域上制备下欧姆接触电极。
本发明的有益效果：本发明创新在于设计了一种基于氮化镓材料的新型辐射探测器结构，并提出了一种有效的工艺制造技术，解决了高性能氮化镓位置灵敏辐射探测器的制备难题，实现新型氮化镓位置灵敏辐射探测器的研制。
附图说明
图1是氮化镓位置灵敏辐射探测器的结构示意图。
图中：1半绝缘氮化镓单晶衬底；2n型氮化镓层；3InGaN插入层；
4高阻氮化镓探测灵敏区；5图形化p型氮化镓层；6绝缘介质保护层；
7上欧姆接触电极；8下欧姆接触电极。
具体实施方式
以下结合技术方案和附图，进一步说明本发明的具体实施方式。
实施例1
步骤1：在半绝缘氮化镓单晶衬底上采用金属有机物化学气相沉积技术外延生长n型氮化镓层，厚度为3μm；
步骤2：在步骤1所制备的n型氮化镓层上采用金属有机物化学气相沉积技术外延生长InGaN插入层，厚度为60nm；
步骤3：在步骤2所制备的InGaN插入层上采用金属有机物化学气相沉积技术外延生长高阻氮化镓探测灵敏区，厚度为20μm；
步骤4：在步骤3所制备的高阻氮化镓探测灵敏区上采用金属有机物化学气相沉积技术外延生长p型氮化镓层，厚度为200nm；
步骤5：对步骤4中制备出的p型氮化镓层利用光刻技术制备掩膜图形，利用感应耦合等离子体刻蚀技术对p型氮化镓层进行刻蚀，制备出单个p型氮化镓区域的条宽为20μm，间距范围为5μm的图形；
步骤6：在步骤5中制备出的图形上制备二氧化硅绝缘介质保护层厚度为100nm；
步骤7：利用光刻掩膜技术和氢氟酸湿法腐蚀技术对p型氮化镓上制备的二氧化硅绝缘介质保护层进行开口处理，开后大小为15μm；
步骤8：利用光刻掩膜、电子束镀膜和化学剥离技术在每个p型氮化镓开口区域上制备镍金上欧姆接触电极；
步骤9：利用光刻掩膜、感应耦合等离子体刻蚀技术和电子束镀膜技术在n型氮化镓区域上制备钛铝金下欧姆接触电极。
最后应说明的是：以上各实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述各实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。

Claims (8)

1.一种氮化镓位置灵敏辐射探测器，其特征在于，所述的氮化镓位置灵敏辐射探测器以半绝缘氮化镓单晶为衬底，其上依次生长n型氮化镓层、InGaN插入层、高阻氮化镓探测灵敏区、图形化p型氮化镓层和绝缘介质保护层；其中，InGaN插入层的宽度小于n型氮化镓层的宽度，InGaN插入层和高阻氮化镓探测灵敏区的宽度相同；多个图形化p型氮化镓层间隔排布在高阻氮化镓探测灵敏区上，图形化p型氮化镓层上制备上欧姆接触电极，n型氮化镓层上未被覆盖区域制备下欧姆接触电极；图形化p型氮化镓层外部为绝缘介质保护层。
2.根据权利要求1所述的氮化镓位置灵敏辐射探测器，其特征在于，所述的n型氮化镓层的厚度为100nm～10μm。
3.根据权利要求2所述的氮化镓位置灵敏辐射探测器，其特征在于，所述的InGaN插入层的厚度为10nm～5μm。
4.根据权利要求3所述的氮化镓位置灵敏辐射探测器，其特征在于，所述的高阻氮化镓探测灵敏区的厚度为1μm～500μm。
5.根据权利要求4所述的氮化镓位置灵敏辐射探测器，其特征在于，所述的图形化p型氮化镓层的厚度为10nm～10μm；单个图形化p型氮化镓区域的条宽为100nm～100μm，间距范围为100nm～100μm。
6.根据权利要求1-5所述的氮化镓位置灵敏辐射探测器，其特征在于，所述的绝缘介质护层的材料是氧化镓、二氧化硅、氮化铝或氮化硅，其厚度为10nm～100μm。
7.一种权利要求1-5所述的氮化镓位置灵敏辐射探测器的制备方法，其特征在于，步骤如下：
步骤1：在半绝缘氮化镓单晶衬底上生长n型氮化镓层；
步骤2：在步骤1所制备的n型氮化镓层上生长InGaN插入层；
步骤3：在步骤2所制备的InGaN插入层上生长高阻氮化镓探测灵敏区；
步骤4：在步骤3所制备的高阻氮化镓探测灵敏区生长p型氮化镓层；
步骤5：对步骤4中制备出的p型氮化镓层利用掩膜进行刻蚀或腐蚀图形化处理；
步骤6：在步骤5中制备出的图形化p型氮化镓层上制备绝缘介质保护层；
步骤7：利用掩膜、腐蚀或刻蚀方法对p型氮化镓上制备的绝缘介质保护层进行开口处理；
步骤8：利用掩膜、镀膜和剥离方法在每个p型氮化镓开口区域上制备上欧姆接触电极；
步骤9：利用掩膜、刻蚀或腐蚀、镀膜方法在n型氮化镓区域上制备下欧姆接触电极。
8.一种权利要求6所述的氮化镓位置灵敏辐射探测器的制备方法，其特征在于，步骤如下：
步骤1：在半绝缘氮化镓单晶衬底上生长n型氮化镓层；
步骤2：在步骤1所制备的n型氮化镓层上生长InGaN插入层；
步骤3：在步骤2所制备的InGaN插入层上生长高阻氮化镓探测灵敏区；
步骤4：在步骤3所制备的高阻氮化镓探测灵敏区生长p型氮化镓层；
步骤5：对步骤4中制备出的p型氮化镓层利用掩膜进行刻蚀或腐蚀图形化处理；
步骤6：在步骤5中制备出的图形化p型氮化镓层上制备绝缘介质保护层；
步骤7：利用掩膜、腐蚀或刻蚀方法对p型氮化镓上制备的绝缘介质保护层进行开口处理；
步骤8：利用掩膜、镀膜和剥离方法在每个p型氮化镓开口区域上制备上欧姆接触电极；
步骤9：利用掩膜、刻蚀或腐蚀、镀膜方法在n型氮化镓区域上制备下欧姆接触电极。
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CN113644165A (zh) * 2021-08-11 2021-11-12 全磊光电股份有限公司 一种低暗电流高灵敏度光电探测器结构及其制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5001335A (en) * 1989-01-31 1991-03-19 Kabushiki Kaisha Toshiba Semiconductor photodetector device and method of manufacturing the same
CN102593233A (zh) * 2012-03-19 2012-07-18 中国科学院上海技术物理研究所 基于图形化蓝宝石衬底的GaN基PIN探测器及制备方法
US20120280350A1 (en) * 2011-05-03 2012-11-08 Raytheon Company Barrier device position sensitive detector
US20130009045A1 (en) * 2011-07-07 2013-01-10 Raytheon Company Self-Aligned Contacts for Photosensitive Detection Devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5001335A (en) * 1989-01-31 1991-03-19 Kabushiki Kaisha Toshiba Semiconductor photodetector device and method of manufacturing the same
US20120280350A1 (en) * 2011-05-03 2012-11-08 Raytheon Company Barrier device position sensitive detector
US20130009045A1 (en) * 2011-07-07 2013-01-10 Raytheon Company Self-Aligned Contacts for Photosensitive Detection Devices
CN102593233A (zh) * 2012-03-19 2012-07-18 中国科学院上海技术物理研究所 基于图形化蓝宝石衬底的GaN基PIN探测器及制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113644165A (zh) * 2021-08-11 2021-11-12 全磊光电股份有限公司 一种低暗电流高灵敏度光电探测器结构及其制造方法
CN113644165B (zh) * 2021-08-11 2023-12-08 全磊光电股份有限公司 一种低暗电流高灵敏度光电探测器结构及其制造方法

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