CN107093417A - Photosensitive circuit and its driving method, electronic installation - Google Patents
Photosensitive circuit and its driving method, electronic installation Download PDFInfo
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- CN107093417A CN107093417A CN201710531975.0A CN201710531975A CN107093417A CN 107093417 A CN107093417 A CN 107093417A CN 201710531975 A CN201710531975 A CN 201710531975A CN 107093417 A CN107093417 A CN 107093417A
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000009434 installation Methods 0.000 title claims abstract description 22
- 108091008695 photoreceptors Proteins 0.000 claims abstract description 25
- 230000008859 change Effects 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 13
- 238000003384 imaging method Methods 0.000 description 12
- 230000005611 electricity Effects 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910007541 Zn O Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000035807 sensation Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- 229910007604 Zn—Sn—O Inorganic materials 0.000 description 1
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- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J1/46—Electric circuits using a capacitor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
- G09G5/10—Intensity circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/444—Compensating; Calibrating, e.g. dark current, temperature drift, noise reduction or baseline correction; Adjusting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/446—Photodiode
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/448—Array [CCD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Thin Film Transistor (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
A kind of photosensitive circuit and its driving method, electronic installation.The photosensitive circuit includes photo-sensitive cell and signal acquisition circuit.Photo-sensitive cell is configured to change its threshold property based on the power of light incident thereon and produce photoreceptor voltage signal；Photoreceptor voltage signal is changed into photocurrent signal by signal acquisition circuit configuration.The photosensitive circuit and its driving method, electronic installation realize the threshold property based on photo-sensitive cell and change the photosensitive electric signal of acquisition.
Description
Technical field
Embodiment of the disclosure is related to a kind of photosensitive circuit and its driving method, electronic installation.
Background technology
Photosensitive circuit can be widely applied in the electronic installations such as imaging device, contactor control device, the specific knot of photosensitive circuit
Structure and performance have direct influence to the complexity and performance of the electronic installations such as imaging device, contactor control device.
The content of the invention
One embodiment of the disclosure provides a kind of photosensitive circuit, and the photosensitive circuit includes photo-sensitive cell and signal acquisition
Circuit.Photo-sensitive cell is configured to change its threshold property based on the power of light incident thereon and produce photoreceptor voltage letter
Number；Photoreceptor voltage signal is changed into photocurrent signal by signal acquisition circuit configuration.
Another embodiment of the disclosure provides a kind of electronic installation, and the electronic installation includes above-mentioned photosensitive circuit.
The further embodiment of the disclosure provides a kind of driving method of photosensitive circuit, the driving method of the photosensitive circuit
Including：In photo stage, the power based on the light incided on photo-sensitive cell changes the threshold property of photo-sensitive cell, and thus
Photoreceptor voltage signal is produced, photoreceptor voltage signal is changed into photocurrent signal.
Brief description of the drawings
, below will be in embodiment or description of Related Art in order to illustrate more clearly of the technical scheme of the embodiment of the present disclosure
The required accompanying drawing used is briefly described, it should be apparent that, drawings in the following description merely relate to some of the disclosure
Embodiment, limitation not of this disclosure.
Fig. 1 is a kind of block diagram for photosensitive circuit that embodiment one is provided；
Fig. 2 is a kind of exemplary structure chart of the photosensitive circuit shown in Fig. 1；
Fig. 3 A are a kind of block diagrams for photosensitive circuit that embodiment two is provided；
Fig. 3 B are a kind of exemplary structure charts of the photosensitive circuit shown in Fig. 3 A；
Fig. 3 C are a kind of exemplary driver' s timing figures of the photosensitive circuit shown in Fig. 3 B；
Fig. 4 A are a kind of block diagrams for electronic installation that embodiment three is provided；
Fig. 4 B are the block diagrams of a kind of imaging device；
Fig. 5 is a kind of exemplary process diagram of the driving method of photosensitive circuit；And
Fig. 6 is a kind of circuit diagram of photosensitive circuit.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
Accompanying drawing, the technical scheme to the embodiment of the present invention is clearly and completely described.Obviously, described embodiment is this hair
Bright a part of embodiment, rather than whole embodiments.Based on described embodiments of the invention, ordinary skill
The every other embodiment that personnel are obtained on the premise of without creative work, belongs to the scope of protection of the invention.
Unless otherwise defined, the technical term or scientific terminology that the disclosure is used should be tool in art of the present invention
The ordinary meaning that the personage for having general technical ability is understood." first ", " second " that is used in the disclosure and similar word are simultaneously
Any order, quantity or importance are not indicated that, and is used only to distinguish different parts.Equally, " one ", " one " or
The similar word such as person's "the" does not indicate that quantity is limited yet, but represents there is at least one." comprising " or "comprising" etc. are similar
The word element or object that mean to occur before the word cover the element or object that appear in the word presented hereinafter and its
It is equivalent, and it is not excluded for other elements or object.The similar word such as " connection " or " connected " be not limited to physics or
The connection of person's machinery, but electrical connection can be included, it is either directly or indirect." on ", " under ", " left side ",
" right side " etc. is only used for representing relative position relation, after the absolute position for being described object changes, then the relative position relation
May correspondingly it change.
For example, Fig. 6 is a kind of circuit diagram of photosensitive circuit, reference picture 6, the photosensitive circuit 500 include photodiode PD,
Transmission transistor M11, reset transistor M12, source follower transistor M13 and selection transistor M14.In reset transistor
When M12 grid RG is applied in cut-in voltage and reset transistor M12 unlatchings, the electricity of sense node (i.e. floating diffusion node FD)
Gesture increases, until the level equal to supply voltage VDD.Source follower transistor M13 and selection transistor M14 is to floating diffusion
Node FD potential is sampled, and sampling potential can be used as reference potential.
During the light sensation accumulation stage, when light is incided on photodiode PD, electronics is produced in response to incident light
Hole is to (EHP).After the light sensation accumulation stage terminates, when transmission transistor M11 grid TG is applied in cut-in voltage, in light
The electric charge of accumulation (or storage) is transferred to floating diffusion node FD in electric diode PD.When basic into just with the quantity of electric charge of transmission
When the floating diffusion node FD of ratio potential is significantly reduced, source follower transistor M13 source potential changes.It is elected
When the grid SEL for selecting transistor M14 is applied in unlatching, selection transistor M14 is opened, source follower transistor M13 source electrode
Voltage is exported as output voltage Vout.Light sensing is completed by measuring the difference between reference potential and output voltage Vout.
Inventor notices that the photosensitive circuit for example shown in Fig. 6 is that the electric current exported based on photodiode PD obtains photosensitive
Signal, and the photoreceptor signal of photosensitive circuit output intensity also by by photodiode PD and source follower transistor
The influence of self-characteristic (for example, threshold property), thus reduces the uniformity of the photosensitive electric signal of photosensitive circuit array output.
For example, transistor can be divided into N-type and P-type transistor by being distinguished according to the characteristic of transistor, for the sake of clarity,
Embodiment of the disclosure illustrates the technical scheme of the disclosure so that transistor is P-type transistor as an example below, but this public affairs
The transistor for the embodiment opened is not limited to P-type transistor, and those skilled in the art can also utilize N-type crystal according to actual needs
Pipe realizes one or more of the embodiment in disclosure transistor, and correspondingly changes control signal for needing to apply etc..
These transistors are, for example, thin film transistor (TFT).
Embodiment of the disclosure provides a kind of photosensitive circuit and its driving method, electronic installation, realizes based on photosensitive
The threshold property of element, which changes, obtains photosensitive electric signal.
At least one embodiment of the disclosure provides a kind of photosensitive circuit, and the photosensitive circuit includes photo-sensitive cell and signal
Obtain circuit.Photo-sensitive cell is configured to change its threshold property based on the power of light incident thereon and produce photoreceptor voltage
Signal；Photoreceptor voltage signal is changed into photocurrent signal by signal acquisition circuit configuration.
At least one embodiment of the disclosure additionally provides a kind of electronic installation, and the electronic installation includes above-mentioned photosensitive electricity
Road.
At least one embodiment of the disclosure additionally provides a kind of driving method of photosensitive circuit, the driving of the photosensitive circuit
Method includes：In photo stage, the power based on the light incided on photo-sensitive cell changes the threshold property of photo-sensitive cell, and
Thus photoreceptor voltage signal is produced, photoreceptor voltage signal is changed into photocurrent signal.
Photosensitive circuit and its driving method, the electronic installation according to the embodiment of the present disclosure are entered below by several embodiments
Row explanation.
Embodiment one
A kind of photosensitive circuit 100 is present embodiments provided, the photosensitive circuit 100 can the threshold value based on photo-sensitive cell 110
Characteristic changing obtains photosensitive electric signal.For example, Fig. 1 is the block diagram for the photosensitive circuit 100 that embodiment one is provided.For example,
As shown in figure 1, the photosensitive circuit 100 can include photo-sensitive cell 110 and signal acquisition circuit 120.For example, photo-sensitive cell 110
Can be set with the concrete form of signal acquisition circuit 120 according to practical application request, embodiment of the disclosure to this not
It is specifically limited.For example, the photosensitive circuit 100 that the embodiment of the present disclosure one is provided can be implemented as circuit as shown in Figure 2.
For example, as depicted in figs. 1 and 2, photo-sensitive cell 110 is configurable to based on the power of light incident thereon to change
Become its threshold property (for example, threshold voltage characteristic) and produce photoreceptor voltage signal.For example, as shown in Fig. 2 photo-sensitive cell 110
The first transistor T1 can be included.For example, the first transistor T1 first end is configurable to receive the first supply voltage V1, the
One supply voltage V1 for example can be constant positive voltage, and the first supply voltage V1 concrete numerical value can for example be answered according to actual
Set with demand, embodiment of the disclosure is not specifically limited to this.For example, the first transistor T1 the second end can match somebody with somebody
It is set to the output end for electrically connecting and being configured to its control end as photo-sensitive cell 110.
For example, the first transistor T1 is in the case of by light (such as infrared light or visible ray) irradiation, its threshold value is special
Property (for example, threshold voltage characteristic) can change.For example, the first transistor T1 particular type can be according to practical application need
(for example, wave band of required light sensing) is asked to be selected, the first transistor T1 for example can be oxide semi conductor transistor,
I.e. using oxide semiconductor material as transistor active layer, the oxide semiconductor material for example can include ZnO,
MgZnO、Zn-Sn-O(ZTO)、In-Zn-O(IZO)、SnO2、Ga2O3、In-Ga-O(IGO)、In2O3、In-Sn-O(ITO)、
In-Ga-Zn-O (IGZO) and InAlZnO (IAZO) etc., but embodiment of the disclosure is not limited to above-mentioned specific oxide and partly leads
Body material.
For example, in the case where not irradiated by light, the first transistor T1 threshold voltage is Vth1 (that is, the
One transistor T1 initial threshold voltage)；In the case where being irradiated by light, the first transistor T1 threshold voltage is changed into
Vth2, and Vth1 is not equal to Vth2.For example, for p-type (for example, PMOS structures) transistor, the first transistor T1 threshold value electricity
Press as negative value；For N-type (for example, NMOS structures) transistor, the first transistor T1 threshold voltage be on the occasion of.For example, for P
Transistor npn npn, the absolute value of the first transistor T1 threshold voltage is bigger, then it represents that incide the light on the first transistor T1
Stronger, correspondingly the potential at the first transistor T1 the second end can be bigger relative to the potential difference values of first end, but the disclosure
Embodiment not limited to this.
For example, as depicted in figs. 1 and 2, signal acquisition circuit 120 can be configured is changed into photosensitive electricity by photoreceptor voltage signal
Flow signal.For example, as shown in Fig. 2 signal acquisition circuit 120 can include driving transistor DTFT, driving transistor DTFT's
Control end is configurable to receive the photoreceptor voltage signal of photo-sensitive cell 110；Driving transistor DTFT first end can be configured
To receive second source voltage V2, second source voltage V2 for example can be constant positive voltage；The of driving transistor DTFT
Two ends are configurable to export photocurrent signal.For example, situation about changing in the light intensity for inciding photo-sensitive cell 110
Under, the photoreceptor voltage signal of the photo-sensitive cell 110 received by driving transistor DTFT control end also changes therewith, by
The photocurrent letter of this conducting degree that can change driving transistor DTFT and driving transistor DTFT the second end output
Number intensity.Therefore, the photosensitive circuit 100 that embodiment one is provided realizes the threshold property change based on photo-sensitive cell 110 and obtained
Take photosensitive electric signal.
For example, as shown in Fig. 2 photosensitive circuit 100 can also include on-off circuit 130, on-off circuit 130 is configurable to
Control whether that output signal obtains the photocurrent signal that circuit 120 is exported.For example, the concrete form of on-off circuit 130 can be with
Set according to practical application request, embodiment of the disclosure is not specifically limited to this.For example, as shown in Fig. 2 switch electricity
Road 130 can include third transistor T3, and third transistor T3 first end is configurable to be electrically connected to driving transistor
DTFT the second end, third transistor T3 the second end is configurable to the output end of photosensitive circuit 100.
For example, in the case where third transistor T3 is P-type transistor, if applied to third transistor T3 control end G3
Increase level signal, then third transistor T3 is in output end R/O (that is, the photosensitive circuits of cut-off state, then on-off circuit 130
100 output end) not output signal obtain circuit 120 export photocurrent signal；If to third transistor T3 control
G3 is held to apply low level signal, then third transistor T3 is in the conduction state, then the output end R/O of on-off circuit 130 (that is, feels
The output end of optical circuit 100) output signal obtain circuit 120 export photocurrent signal.
For example, in embodiment of the disclosure one and other embodiments, only the first transistor T1 is light sensing transistor, its
Remaining transistor is non-photo-sensing transistor.It should be noted that used in embodiment of the disclosure one and other embodiments
Transistor can be thin film transistor (TFT) or other characteristic identical switching devices；For example, in the preparation can be by these transistors
Prepare in shading region, to avoid illumination to the adverse effect of the characteristic of these transistors.The source electrode of the transistor used here,
Drain electrode can be symmetrical in structure, so its source electrode, drain electrode can be physically not different.In the disclosure
Embodiment in, remove grid as control end to distinguish transistor, directly describe wherein one extremely first end, Ling Yiji
For the second end, so the first end of all or part of transistor and the second end are to exchange as needed in the embodiment of the present disclosure
's.For example, the first end of the transistor of the embodiment of the present disclosure can be source electrode, the second end can be drain electrode；Or, transistor
First end is drain electrode, and the second end is source electrode.
The photosensitive circuit that the present embodiment is provided can the threshold property based on photo-sensitive cell change and obtain photosensitive electric signal, and
The current signal for being not based on photo-sensitive cell generation obtains photosensitive electric signal.
Embodiment two
A kind of photosensitive circuit 100 is present embodiments provided, the photosensitive circuit 100 can be obtained corresponding to photo-sensitive cell 110
Threshold voltage variation amount photocurrent signal, that is, the present embodiment provide photosensitive circuit 100 acquired in photocurrent
Signal is related only to inciding the light intensity on photo-sensitive cell 110, it is possible thereby to avoid crystal caused by such as manufacture craft
The threshold property of pipe changes the change of caused photocurrent signal.
For example, Fig. 3 A are the block diagrams for the photosensitive circuit 100 that embodiment two is provided.For example, as shown in Figure 3A, the sense
Optical circuit 100 can include photo-sensitive cell 110 and signal acquisition circuit 120, and signal acquisition circuit 120 can for example include driving
Transistor DTFT and compensation circuit 121.For example, the photosensitive circuit 100 can also include on-off circuit 130.For example, photo-sensitive cell
110th, the particular content of driving transistor DTFT and on-off circuit 130 may refer to embodiment one, will not be repeated here.
For example, the compensation circuit 121 of signal acquisition circuit 120 is configurable to compensate driving transistor DTFT,
So that the photocurrent signal of the exportable threshold voltage variation amount corresponding to photo-sensitive cell 110 of signal acquisition circuit 120.Example
Such as, the concrete form of compensation circuit 121 can be set according to practical application request, and embodiment of the disclosure is not done to this to be had
Body is limited.For example, the compensation circuit 121 that the embodiment of the present disclosure two is provided can be implemented as circuit as shown in Figure 3 B.
For example, as shown in Figure 3 B, compensation circuit 121 can include the first electric capacity C1, second transistor T2, first node
151 and Section Point 152.For example, the output end of photo-sensitive cell 110 is electrically connected to first node 151；The first of first electric capacity C1
End is configured to be electrically connected to first node 151, and the first electric capacity C1 the second end is configured to be electrically connected to Section Point 152；Second
Transistor T2 first end is configured to be electrically connected to Section Point 152, and second transistor T2 the second end is configured to be electrically connected to
Driving transistor DTFT the second end, second transistor T2 control end G2 is configured to receive compensating control signal.
For example, the compensation function to compensation circuit 121 so that second transistor T2 is P-type transistor as an example is done specifically below
It is bright.For example, in the case where the second transistor T2 control end G2 compensating control signals received are low level signal, second is brilliant
Body pipe T2 is in the conduction state, by driving transistor DTFT control end and the second end short circuit；Afterwards, via driving transistor
DTFT charges to the first electric capacity C1, after charging terminates, final driving transistor DTFT control end (that is, Section Point
152) voltage is the potential V2+Vth_D at the second end, and stored by the first electric capacity C1 that Vth_D is driving transistor DTFT here
Threshold voltage.
For example, the photosensitive circuit 100 that the present embodiment is provided can also include reset circuit 140, the reset circuit 140 can be with
It is configured to perform signal acquisition circuit 120 and photo-sensitive cell 110 and resets operation.For example, the concrete form of reset circuit 140 can
To be set according to practical application request, embodiment of the disclosure is not specifically limited to this.For example, the embodiment of the present disclosure two
The reset circuit 140 of offer can be implemented as circuit as shown in Figure 3 B.
For example, as shown in Figure 3 B, reset circuit 140 can include the 4th transistor T4 and the 5th transistor T5.For example, the
Four transistor T4 first end is configured to receive the 3rd supply voltage V3；4th transistor T4 the second end is electrically connected to second section
Point 152.For example, the 5th transistor T5 first end is configured to receive the 4th supply voltage V4, the 4th transistor T4 the second end
It is electrically connected to first node 151.
For example, below to reset circuit 140 so that the 4th transistor T4 and the 5th transistor T5 are P-type transistor as an example
Reset function is illustrated.For example, being connect in the 4th transistor T4 control end G4 and the 5th transistor T5 control end G5
In the case of receiving low level signal, the 4th transistor T4 and the 5th transistor T5 are in conducting state, are now stored in
The current potential at one electric capacity C1 two ends can be set to V4 and V3 via the 4th transistor T4 of conducting and the 5th transistor T5；Cause
This, reset circuit 140 can cause signal acquisition circuit 120 and photo-sensitive cell 110 to return to original state, it is possible thereby to avoid
The electric charge that one sense period is stored at the first electric capacity C1 two ends produces influence to the presently sensed cycle.For example, the 3rd supply voltage
V3 can for example make it that driving transistor DTFT is in the conduction state after reseting stage.
For example, according to practical application request, the 4th transistor T4 control end G4 and the 5th transistor T5 control end G5
It is configurable to be electrically connected to same signal wire, it is possible thereby to simplify the knot for the photosensitive circuit 100 that the embodiment of the present disclosure two is provided
Structure.For example, according to practical application request, second source voltage V2 and the 4th supply voltage V4 are configurable to identical voltage electricity
Signal, namely second source voltage V2 are equal to the 4th supply voltage V4, or the two can be electrically connected to each other, it is possible thereby to solve
Driving transistor DTFT IR Drop (that is, voltage drop) problem, it is described in detail below.
For example, below by taking the photosensitive circuit 100 shown in Fig. 3 B as an example, the photosensitive circuit provided the embodiment of the present disclosure two
100 exemplary working method is illustrated.For example, Fig. 3 C are a kind of exemplary drives of the photosensitive circuit shown in Fig. 3 B
Dynamic timing diagram.For example, the photosensitive circuit 100 shown in Fig. 3 B can obtain photosensitive electric signal (for example, electric current by following step
Signal).
Step S110：In reseting stage, signal acquisition circuit and photosensitive circuit are resetted；
Step S120：In compensated stage, signal acquisition circuit is compensated；
Step S130：In photo stage, the strong and weak threshold for changing photo-sensitive cell based on the light incided on photo-sensitive cell
It is worth characteristic, and thus produces photoreceptor voltage signal, and photoreceptor voltage signal is changed into photocurrent signal；
Step S140：In the signal output stage, output signal obtains the photocurrent signal of circuit output.
For example, as shown in Fig. 3 B and Fig. 3 C, in step s 110, namely in reseting stage RES, can be to the 4th transistor
T4 control end G4 and the 5th transistor T5 control end G5 apply Continuity signal (for example, low level signal), and brilliant to second
Body pipe T2 control end G2 and third transistor T3 control end G3 apply pick-off signal (for example, high level signal), so that the
Four transistor T4 and the 5th transistor T5 are in the conduction state, and second transistor T2 and third transistor T3 is in cut-off shape
State；Now, being stored in the current potential at the first electric capacity C1 two ends can set via the 4th transistor T4 of conducting and the 5th transistor T5
It is set to voltage V4 and V3, it is possible thereby to avoid the electric charge that a sense period is stored at the first electric capacity C1 two ends to presently sensed week
Phase produces influence.
For example, as shown in Fig. 3 B and Fig. 3 C, in the step s 120, namely in compensated stage COP, can be to second transistor
T2 control end G2 applies Continuity signal (for example, low level signal), and to third transistor T3 control end G3, the 4th crystal
Pipe T4 control end G4 and the 5th transistor T5 control end G5 apply pick-off signal (for example, high level signal), so that second
Transistor T2 is in the conduction state, and causes third transistor T3, the 4th transistor T4 and the 5th transistor T5 to be in cut-off shape
State；Now, the potential of first node 151 is the electricity that the potential of the first electric capacity C1 one end is equal to the output end of photo-sensitive cell 110
Gesture V1+Vth_1, the potential of Section Point 152 is that the potential of the second electric capacity C2 other end is controlled equal to driving transistor DTFT
The potential V2+Vth_D at end, thus the voltage difference at the first electric capacity C1 two ends is V2+Vth_D-V1-Vth_1.Also, now due to
Third transistor T3 is in cut-off state, therefore driving transistor DTFT except the charging electricity charged to the first electric capacity C1
Outside road, photocurrent signal will not be exported.
For example, as shown in Fig. 3 B and Fig. 3 C, in step s 130, namely in photo stage SEN, can be to second transistor
T2 to the 5th transistor T5 control end G2-G5 applies pick-off signal (for example, high level signal), to cause it to be in cut-off shape
State, now Section Point 152, which is in hang, connects state.At the same time, photo-sensitive cell 110 is by illumination, that is, light incides sense
On optical element 110, thus the threshold value of photo-sensitive cell 110 is changed into Vth_2 from Vth_1, accordingly, the potential of first node 151
V1+Vth_2 is changed into from V1+Vth_1.Because now Section Point 152 is in what is stored in floating state, therefore the first electric capacity C1
The quantity of electric charge can not undergo mutation, that is, the quantity of electric charge stored in the first electric capacity C1 keeps constant；It is corresponding, according to capacitance charge
Conservation principle, the voltage difference at the first electric capacity C1 two ends also keeps constant, and thus the potential of Section Point 152 is driving transistor
The potential of DTFT control end is changed into Vth_2-Vth_1+V2+Vth_D from V2+Vth_D.
For example, as shown in Fig. 3 B and Fig. 3 C, can be to the 3rd in step S140, namely in signal output stage OUTP
Transistor T3 control end G3 applies Continuity signal (for example, low level signal), and to second transistor T2 control end G2, the
Four transistor T4 control end G4 and the 5th transistor T5 control end G5 apply pick-off signal (for example, high level signal), with
Make third transistor T3 in the conduction state, and second transistor T2, the 4th transistor T4 and the 5th transistor T5 are in
Cut-off state；Now, the photocurrent signal that signal acquisition circuit 120 is exported can be via driving transistor DTFT and conducting
Third transistor T3 exported from the output end of photosensitive circuit 100, the size of the photocurrent signal is by driving transistor DTFT
Control.
Now, because the driving transistor DTFT potentials for being in saturation state and its control end (i.e. grid) are Vth_2-
Vth_1+V2+Vth_D, the potential of first end (source terminal) is V2, therefore driving transistor DTFT is in output under saturation state
Electric current Ids (i.e. photocurrent signal) formula can be calculated as below obtains：
Ids=1/2 × K (Vgs-Vth_D)2
=1/2 × K × (Vth_2-Vth_1+V2+Vth_D-V2-Vth_D)2
=1/2 × K × (Vth_2-Vth_1)2,
Here, K=W/L × C × u, W/L are breadth length ratio (that is, the ratio of width and length of driving transistor DTFT raceway groove
Value), u is electron mobility, and C is the electric capacity of unit area.
Therefore, threshold voltage variation amount of the photocurrent signal of driving transistor DTFT outputs only with photo-sensitive cell 110
Correlation, and the initial threshold of the threshold value and photo-sensitive cell 110 with driving transistor DTFT is unrelated, that is, the institute of photosensitive circuit 100
Obtain photocurrent signal related only to inciding the light intensity on photo-sensitive cell 110.It can thus be avoided driving transistor
The influence of DTFT threshold value and the initial threshold of photo-sensitive cell 110 to the photocurrent signal of the output of signal acquisition circuit 120,
It is possible thereby to avoid changing for driving transistor DTFT threshold value caused by such as manufacture craft and the initial threshold of photo-sensitive cell 110
The change of photocurrent signal caused by becoming.Moreover, resulting photocurrent signal is also unrelated with supply voltage V2, therefore
It can avoid due to the change for the supply voltage V2 that power line length change (thus voltage drop change) causes to be linked into photosensitive circuit
Change, you can with caused by the IR Drop (that is, voltage drop) for the driving transistor DTFT for overcoming the pixel cell of each in pel array
Non-uniformity.
Embodiment three
A kind of electronic installation 10 is present embodiments provided, the electronic installation for example can be implemented as imaging device, touch-control dress
Put or it is other need the device of photosensitive circuit, embodiment of the disclosure is not specifically limited to this.For example, Fig. 4 A are embodiments
A kind of block diagram of three electronic installations provided.There is provided for example, the electronic installation can include disclosure any embodiment
Photosensitive circuit 100.It should be noted that can be using applicable for other essential parts of the electronic installation
Conventional components, these are that one of ordinary skill in the art will be appreciated by, and be will not be described here, also should not be used as to this
The limitation of invention.
For example, Fig. 4 B are the block diagrams of a kind of imaging device.For example, being filled below in conjunction with the imaging shown in Fig. 4 B
The electronic installation 10 that example provides the embodiment of the present disclosure three is set to illustrate.For example, as shown in Figure 4 B, the imaging device can
With including pixel unit array and peripheral circuit.For example, pixel unit array can include the pixel cell for being arranged into array, often
Individual pixel cell can for example include the photosensitive circuit that disclosure any embodiment is provided.For example, as shown in Figure 4 B, pixel cell
Each pixel cell that array is arranged into square formation, square formation by X and Y-direction has it in X, Y-direction (such as line direction and row
Direction) on address, and can enter respectively via the address decoder of corresponding line and corresponding alignment in both directions
Row selection；After the current/voltage signal of output is exaggerated, it is transported to A/D converter progress analog-to-digital conversion and becomes data signal
Output.For the embodiment shown in Fig. 3 B, such as R/O lines connect alignment and third transistor T3 grid G 5 connects line, by
This can realize the reading line by line of the photoreceptor signal for pixel unit array by controlling the scanning signal on line.
For example, due to the present embodiment provide photosensitive circuit can based on photo-sensitive cell threshold property change obtain it is photosensitive
Electric signal, and the current signal for being not based on photo-sensitive cell generation obtains photosensitive electric signal, therefore the imaging dress that the present embodiment is provided
The threshold property for putting the photo-sensitive cell that can be included based on pixel cell realizes imaging function.
For example, in the manufacturing process of the pixel unit array of imaging device, due to such as raw material and process conditions
The threshold value of transistor in nonuniformity, pixel unit array may have differences.For example, the first of different pixels unit
The initial threshold voltage of transistor may have differences；In another example, the threshold voltage of the driving transistor of different pixels unit
It may have differences.Threshold voltage variation of the photosensitive electric signal only with photo-sensitive cell exported in the photosensitive circuit of pixel cell
In the case that amount is related, the photocurrent signal acquired in photosensitive circuit is only with inciding the light intensity phase on photo-sensitive cell
Close, therefore the photosensitive electricity that the threshold value of driving transistor and the initial threshold of photo-sensitive cell can be avoided to export signal acquisition circuit
Flow signal and produce influence, it is possible thereby to avoid the initial of the threshold value of driving transistor caused by such as manufacture craft and photo-sensitive cell
The change of photocurrent signal caused by the change of threshold value, and then the imagewise uniform of imaging device can be lifted, and therefore may be used
To avoid the demand for carrying out successive image processing to the image acquired in imaging device from (feeling for example, removing in each pixel cell
The background current of optical circuit generation).
Example IV
A kind of driving method of photosensitive circuit is present embodiments provided, the driving method of the photosensitive circuit can drive this public affairs
The photosensitive circuit of any embodiment offer is provided.For example, Fig. 5 is a kind of exemplary process diagram of the driving method of photosensitive circuit.Example
Such as, Fig. 5 be by taking the embodiment shown in Fig. 3 B as an example to example IV provide photosensitive circuit driving method carry out it is exemplary
Illustrate, but embodiment of the disclosure not limited to this.For example, as shown in figure 5, the driving method of the photosensitive circuit can include it is following
Step：
Step S10：In reseting stage, signal acquisition circuit and photosensitive circuit are resetted；
Step S20：In the signal compensation stage, signal acquisition circuit is compensated；
Step S30：In photo stage, the strong and weak threshold value for changing photo-sensitive cell based on the light incided on photo-sensitive cell
Characteristic, and photoreceptor voltage signal is thus produced, photoreceptor voltage signal is changed into photocurrent signal.
For example, the driving method of the photosensitive circuit can also comprise the following steps：
Step S40：In the signal output stage, output signal obtains the photocurrent signal of circuit output.
For example, step S10, step S20, step S30 and step S40 specific implementation may refer to the disclosure respectively
Embodiment two step S110, step S120, step S130 and step S140, will not be repeated here.
Obviously, those skilled in the art can carry out various changes, modification, combination without de- with embodiment of this disclosure
From spirit and scope of the present disclosure.So, if these modifications, modification, the combination of embodiment of the disclosure belong to disclosure power
Within the scope of profit requirement and its equivalent technologies, then the disclosure is also intended to comprising including these changes and modification.
Embodiment of the disclosure provides a kind of photosensitive circuit and its driving method, electronic installation, realizes based on photosensitive
The threshold property of element, which changes, obtains photosensitive electric signal.
Described above is only the exemplary embodiment of the present invention, not for limiting the scope of the invention, this hair
Bright protection domain is determined by appended claim.
Claims (16)
1. a kind of photosensitive circuit, including：
Photo-sensitive cell, is configured to change its threshold property based on the power of light incident thereon and produce photoreceptor voltage letter
Number；
The photoreceptor voltage signal is changed into photocurrent signal by signal acquisition circuit, configuration.
2. photosensitive circuit according to claim 1, wherein,
The photo-sensitive cell includes the first transistor, and the first end of the first transistor is configured to receive the first supply voltage,
Second end of the first transistor is configured to that the output end as the photo-sensitive cell is electrically connected and be configured to its control end.
3. photosensitive circuit according to claim 2, wherein, the first transistor is oxide semi conductor transistor.
4. photosensitive circuit according to claim 2, wherein,
The signal acquisition circuit includes driving transistor, and the control end of the driving transistor is configured to receive the photosensitive member
The photoreceptor voltage signal of part, the first end of the driving transistor is configured to receive second source voltage, the driving transistor
The second end be configured as output to the photocurrent signal.
5. photosensitive circuit according to claim 4, wherein, the signal acquisition circuit also includes compensation circuit,
The compensation circuit is configured to compensate the driving transistor, so that the exportable correspondence of the signal acquisition circuit
In the photocurrent signal of the threshold voltage variation amount of the photo-sensitive cell.
6. photosensitive circuit according to claim 5, wherein,
The compensation circuit includes the first electric capacity, second transistor, first node and Section Point；
The output end of the photo-sensitive cell is electrically connected to the first node,
The first end of first electric capacity is configured to be electrically connected to the first node, and the second end of first electric capacity is configured to
It is electrically connected to the Section Point；
The first end of the second transistor is configured to be electrically connected to the Section Point, and the second end of the second transistor is matched somebody with somebody
The second end for being electrically connected to the driving transistor is set to, the control end of the second transistor is configured to receive compensation control letter
Number.
7. photosensitive circuit according to claim 6, in addition to reset circuit, wherein,
The reset circuit, which is configured to perform the signal acquisition circuit and the photo-sensitive cell, resets operation.
8. photosensitive circuit according to claim 7, wherein,
The reset circuit includes the 4th transistor and the 5th transistor,
The first end of 4th transistor is configured to receive the 3rd supply voltage, the second end electrical connection of the 4th transistor
To the Section Point；
The first end of 5th transistor is configured to receive the 4th supply voltage, the second end electrical connection of the 4th transistor
To the first node.
9. photosensitive circuit according to claim 8, wherein,
The control end of 4th transistor and the control end of the 5th transistor are configured to be electrically connected to same signal wire.
10. photosensitive circuit according to claim 8, wherein,
The second source voltage is configured to identical voltage electric signal with the 4th supply voltage.
11. photosensitive circuit according to claim 10, in addition to on-off circuit, wherein,
The on-off circuit is configured to the photocurrent signal for controlling whether to export the signal acquisition circuit output.
12. photosensitive circuit according to claim 11, wherein,
The on-off circuit includes third transistor, and the first end of the third transistor is configured to be electrically connected to the driving crystalline substance
Second end of body pipe, the second end of the third transistor is configured to the output end of the photosensitive circuit.
13. a kind of electronic installation, including the photosensitive circuit as described in claim 1-12 is any.
14. a kind of driving method of photosensitive circuit as claimed in claim 1, including：
In photo stage, the power based on the light incided on photo-sensitive cell changes the threshold property of the photo-sensitive cell, and
Thus photoreceptor voltage signal is produced, the photoreceptor voltage signal is changed into photocurrent signal.
15. driving method according to claim 14, in addition to：Before the photo stage, to the signal acquisition
Circuit and the photosensitive circuit are resetted.
16. driving method according to claim 14, in addition to：
Before the photo stage and after a reset, the signal acquisition circuit is compensated.
Priority Applications (3)
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| CN201710531975.0A CN107093417B (en) | 2017-07-03 | 2017-07-03 | Photosensitive circuit, driving method thereof and electronic device |
| PCT/CN2018/078839 WO2019007100A1 (en) | 2017-07-03 | 2018-03-13 | Photosensitive circuit and drive method therefor, and electronic apparatus |
| US16/098,302 US11255725B2 (en) | 2017-07-03 | 2018-03-13 | Photosensitive circuit, driving method thereof and electronic device |
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| US20200319023A1 (en) | 2020-10-08 |
| CN107093417B (en) | 2020-06-16 |
| US11255725B2 (en) | 2022-02-22 |
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