CN101532874B - Optical sensor for display device - Google Patents
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Abstract
Description
技术领域technical field
本发明关于一种光传感器,特别是关于一种设置于一显示装置内以传感环境光亮度的光传感器。 The present invention relates to a light sensor, in particular to a light sensor arranged in a display device for sensing ambient light brightness. the
背景技术Background technique
设置一环境光传感元件(ambient light sensor)于显示装置上,可以测量环境照明的强度以对应调整显示装置的光源亮度,如此可同时符合提供良好显示效果及降低耗电量的要求。 An ambient light sensor is arranged on the display device to measure the intensity of the ambient lighting to adjust the brightness of the light source of the display device accordingly, so as to meet the requirements of providing good display effect and reducing power consumption at the same time. the
图1为显示一已知光传感器100的电路图,图2为显示输入图1的光传感器100的信号的时序图。请同时参考图1及图2,光传感器100包含一传感晶体管Q1、一选择晶体管Q2、一电流产生晶体管Q3、一输出晶体管Q4、及一电容C1。光传感器100输出一传感器电流Iout,电流Iout的量值取决于所接收的光量。传感晶体管Q1被供应一第一电压VDD及一第二电压VGG,当选择信号SELECT于高位准时,选择晶体管Q2导通以将传感晶体管Q1、电容C1电连接至第一电压VDD,此时传感晶体管Q1不产生光电流且电容C1充电至具有第一电压VDD,且当读取信号READ于高位准时可导通输出晶体管Q4而输出第一电压VDD。另一方面,当选择信号SELECT于低位准时,选择晶体管Q2关闭以使传感晶体管Q1、电容C1均与第一电压VDD断开,此时电容C1储存电荷以产生施加至电流产生晶体管Q3的光电压。因此,传感器电流Iout的量值取决于光电压相对于第一电压VDD的差值。再者,当读取信号READ于高位准时可导通输出晶体管Q4,使晶体管Q4输出对应传感器电流Iout大小的光电压Vout。 FIG. 1 is a circuit diagram showing a known
上述设计的缺点为电流产生晶体管Q3在长时间受到负偏压的情况下,会产生临限电压偏移(threshold voltage shift)现象而容易造成损坏;另一方面,依上述设计因为每次重置(reset)电路动作时,节点n1电压会设定在第一电压VDD,如此参考电压及光电压两者的差值的变化范围会很小。 The disadvantage of the above design is that the current generating transistor Q3 will be damaged due to threshold voltage shift when it is negatively biased for a long time; on the other hand, according to the above design, because each reset When the (reset) circuit operates, the voltage of the node n1 will be set at the first voltage VDD, so the variation range of the difference between the reference voltage and the photovoltage will be very small. the
图3为显示已知另一光传感器200设计的电路图。如图3所示,光传感器200包含一传感电路202、一参考电压产生电路204、及一处理单元206。传感电路202包含一传感晶体管Q1、一重置晶体管Q2、一开关晶体管Q3、及两个电容C1、C2。参考电压产生电路204包含一传感晶体管Q4、一重置晶体管Q5、一开关晶体管Q6、及两个电容C3、C4。传感晶体管Q1被供应一第一电压VDD及一第二电压VGG,且电容C1、C2连接一第三电压VDC。光传感器200利用一栅极驱动器(图未示)驱动,当重置晶体管Q2导通时,电路作重置动作,此时开关晶体管Q3由栅极驱动器的第一级输出导通,使光传感器200的开关晶体管Q3得到一参考电压ΔV1。其后等传感晶体管Q1照光一段时间后,开关晶体管Q3由栅极驱动器的最后一级输出导通,此时光传感器200的开关晶体管Q3得到一变化后的光电压ΔV2。当开关信号SWITCH为高位准时,可取出参考电压ΔV1或变化后的光电压ΔV2。此一设计的优点在于电路重置的机制,如此可使参考电压及变化后的光电压两者的差值的变化范围较广。然而,此一设计的缺点为需要两组电路,亦即利用一组传感电路202产生光电压且利用另一组参考电压产生电路204产生参考电压,如此将使光传感器200的元件数过多而增加制造成本。 FIG. 3 is a circuit diagram showing another known
发明内容Contents of the invention
本发明的目的在于提供一种用于显示装置的光传感器,其能以较少的元件数获得一宽广的传感范围,且可提高电路元件的工作寿命。 The purpose of the present invention is to provide a light sensor for a display device, which can obtain a wide sensing range with a small number of components, and can increase the working life of circuit components. the
依本发明的一实施型态,一种用于显示装置的光传感器包含一光接收器、一重置单元及一取样单元。光接收器接收外部光并产生一对应所接收光量的光电压,且包含一第一晶体管、及将第一晶体管的输出转换为光电压的一第 一转换单元。重置单元回应一重置信号以提供一初始化的参考电压,且包含彼此连接的一第二晶体管及一第三晶体管,第二晶体管的控制端连接重置信号且第三晶体管的控制端连接第一转换单元,且当第二晶体管导通时第一转换单元经由第三晶体管放电以获得初始化的参考电压。取样单元回应一取样信号输出对应所接收光量的光电压,且包含回应该取样信号的一第四晶体管、及将第四晶体管的输出转换为光电压的一第二转换单元。 According to an embodiment of the present invention, a light sensor for a display device includes a light receiver, a reset unit and a sampling unit. The light receiver receives external light and generates a photovoltage corresponding to the amount of received light, and includes a first transistor and a first conversion unit for converting the output of the first transistor into photovoltage. The reset unit responds to a reset signal to provide an initialized reference voltage, and includes a second transistor and a third transistor connected to each other, the control terminal of the second transistor is connected to the reset signal and the control terminal of the third transistor is connected to the first transistor. A conversion unit, and when the second transistor is turned on, the first conversion unit discharges through the third transistor to obtain an initialized reference voltage. The sampling unit responds to a sampling signal and outputs a photovoltage corresponding to the amount of received light, and includes a fourth transistor responding to the sampling signal, and a second conversion unit converting the output of the fourth transistor into a photovoltage. the
依本发明的另一实施型态,一种用于显示装置的光传感器包含一传感电路、一参考电压产生电路及一处理单元。传感电路包含一第一光接收器、一第一重置单元及一第一读取单元。第一光接收器接收外部光并产生一对应所接收光量的光电压,第一光接收器包含一第一晶体管、及将第一晶体管的输出转换为光电压的一第一转换单元。第一重置单元回应第一重置信号以提供一初始化的该光电压,重置单元包含彼此电连接的一第二晶体管及一第三晶体管,第二晶体管的控制端连接第一重置信号且第三晶体管的控制端连接第一转换单元,且当第二晶体管导通时第一转换单元经由第三晶体管放电以获得初始化的光电压。第一读取单元回应第一读取信号输出对应所接收光量的光电压,第一读取单元包含回应第一读取信号的一第四晶体管、及将第四晶体管的输出转换为光电压的一第二转换单元。参考电压产生电路包含一第二光接收器、一第二重置单元及一第二读取单元。第二光接收器被屏蔽于外部光照射以产生一参考电压,第二光接收器包含一第五晶体管、及将第五晶体管的输出转换为参考电压的一第三转换单元。第二重置单元回应一第二重置信号以提供一初始化的参考电压,第二重置单元包含彼此电连接的一第六晶体管及一第七晶体管,第六晶体管的控制端连接第二重置信号且第七晶体管的控制端连接第三转换单元,且当第六晶体管导通时第三转换单元经由第七晶体管放电以获得初始化的参考电压。第二读取单元回应一第二读取信号以输出参考电压,第二读取单元包含回应第二读取信号的一第八晶体管、及将第八晶体管的输出转换为参考电压的一第四转换单元。处理单元接收光电压 及参考电压以产生对应光电压与参考电压的差值的一输出信号。 According to another embodiment of the present invention, a light sensor for a display device includes a sensing circuit, a reference voltage generating circuit and a processing unit. The sensing circuit includes a first light receiver, a first reset unit and a first read unit. The first photoreceiver receives external light and generates a photovoltage corresponding to the amount of received light. The first photoreceiver includes a first transistor and a first conversion unit for converting the output of the first transistor into photovoltage. The first reset unit responds to the first reset signal to provide an initialized photovoltage, the reset unit includes a second transistor and a third transistor electrically connected to each other, and the control terminal of the second transistor is connected to the first reset signal And the control end of the third transistor is connected to the first conversion unit, and when the second transistor is turned on, the first conversion unit discharges through the third transistor to obtain an initialized photovoltage. The first reading unit responds to the first reading signal to output a photovoltage corresponding to the amount of received light, the first reading unit includes a fourth transistor responding to the first reading signal, and a device for converting the output of the fourth transistor into a photovoltage a second conversion unit. The reference voltage generation circuit includes a second light receiver, a second reset unit and a second read unit. The second photoreceiver is shielded from external light to generate a reference voltage. The second photoreceiver includes a fifth transistor and a third conversion unit for converting the output of the fifth transistor into the reference voltage. The second reset unit responds to a second reset signal to provide an initialized reference voltage, the second reset unit includes a sixth transistor and a seventh transistor electrically connected to each other, and the control terminal of the sixth transistor is connected to the second reset The signal is set and the control terminal of the seventh transistor is connected to the third conversion unit, and when the sixth transistor is turned on, the third conversion unit discharges through the seventh transistor to obtain an initialized reference voltage. The second reading unit responds to a second reading signal to output a reference voltage, the second reading unit includes an eighth transistor that responds to the second reading signal, and a fourth transistor that converts the output of the eighth transistor into a reference voltage conversion unit. The processing unit receives the photovoltage and the reference voltage to generate an output signal corresponding to the difference between the photovoltage and the reference voltage. the
通过本发明各个实施例的设计,光传感器每次进行重置动作时,储存电容电压可通过重置电路的自动归零(auto-zero)放电动作下降至相等或接近于第三晶体管的临限电压(参考电压),之后再随光照逐步上升,如此光传感器可相对参考电压获得一较大的输出光电压变化范围。再者,因输出光电压与参考电压均由同一电路取出,可有效减少电路元件数及布局面积以节省成本。另一方面,因光传感晶体管轮流受到正偏压(正栅极电压VGH)及负偏压(光照电压)作用,如此可有效避免临限电压偏移产生以提高工作寿命。 Through the design of various embodiments of the present invention, each time the photosensor performs a reset action, the storage capacitor voltage can be dropped to be equal to or close to the threshold of the third transistor through the auto-zero discharge action of the reset circuit. Voltage (reference voltage), and then gradually increase with the light, so that the light sensor can obtain a larger output photovoltage variation range relative to the reference voltage. Furthermore, since the output photovoltage and the reference voltage are taken out by the same circuit, the number of circuit components and layout area can be effectively reduced to save cost. On the other hand, since the photo-sensing transistor is subjected to positive bias (positive gate voltage VGH) and negative bias (light voltage) in turn, it can effectively avoid threshold voltage shift and improve working life. the
附图说明Description of drawings
图1为显示一已知光传感器的电路图,图2为显示输入图1的光传感器的信号的时序图; Fig. 1 is a circuit diagram showing a known photosensor, and Fig. 2 is a timing diagram showing signals input to the photosensor of Fig. 1;
图3为显示已知另一光传感器设计的电路图; Figure 3 is a circuit diagram showing another known photosensor design;
图4为依本发明一实施例的光传感器的电路图,图5为输入图4的光传感器的信号的时序图; Fig. 4 is the circuit diagram of the light sensor according to an embodiment of the present invention, and Fig. 5 is the timing diagram of the signal of inputting the light sensor of Fig. 4;
图6为说明第一电容的电位变化的示意图; Fig. 6 is a schematic diagram illustrating the potential change of the first capacitor;
图7为依本发明一实施例的处理单元示意图; Fig. 7 is a schematic diagram of a processing unit according to an embodiment of the present invention;
图8为依本发明另一实施例的光传感器的电路图,图9为输入图8的光传感器的信号的时序图; Figure 8 is a circuit diagram of an optical sensor according to another embodiment of the present invention, and Figure 9 is a timing diagram of a signal input to the optical sensor of Figure 8;
图10为依本发明另一实施例的光传感器的电路图。 FIG. 10 is a circuit diagram of a light sensor according to another embodiment of the present invention. the
附图标号 Reference number
10、20、30光传感器 12处理单元 10, 20, 30
14放大器 16模拟数字转换器 14
32传感电路 34参考电压产生电路 32
36处理单元 100、200光传感器 36
202传感电路 204参考电压产生电路 202
206处理单元 BM遮光元件 206 processing unit BM shading element
C1-C4电容 n1节点 C1-C4 capacitor n1 node
Q1-Q6晶体管 T1-T8晶体管 Q1-Q6 Transistor T1-T8 Transistor
ΔV1参考电压 ΔV2光电压 ΔV1 reference voltage ΔV2 photovoltage
VDD第一电压 VGG第二电压 VDD first voltage VGG second voltage
VDC第三电压 VGH正栅极电压 VDC third voltage VGH positive gate voltage
VGL负栅极电压 Vref参考电压 VGL negative gate voltage Vref reference voltage
Vout输出光电压 READ读取信号 Vout output light voltage READ reading signal
RESET重置信号 SELECT选择信号 RESET reset signal SELECT selection signal
STV扫描启始信号 SWITCH开关信号 STV scan start signal SWITCH switch signal
SAMPLE取样信号 SAMPLE sampling signal
具体实施方式Detailed ways
如下将参照相关附图,说明依本发明较佳实施例的光传感器设计,其中相同的元件将以相同的附图标号加以说明。 The design of the light sensor according to the preferred embodiment of the present invention will be described below with reference to the related drawings, wherein the same components will be described with the same reference numerals. the
图4为依本发明一实施例的光传感器10的电路图,图5为输入图4的光传感器10的信号的时序图,依本实施例的设计,因光传感器10是设置于一显示装置(图未示)内以传感环境光亮度,故光传感器10的电压源例如可为提供显示装置扫瞄电压的一栅极驱动IC(gate driver IC)。如图4所示,光传感器10包含一第一晶体管T1、一第二晶体管T2、一第三晶体管T3、一第四晶体管T4、一第五晶体管T5、一第一电容C1、一第二电容C2及一第三电容C3。第一晶体管T1的栅极连接一扫描启始信号STV,其漏极连接一第一电压,且其源极连接一第二电压及第一电容C1,该第一及第二电压例如可分别为一栅极驱动IC的正栅极电压VGH及负栅极电压VGL。第二晶体管T2的栅极连接一重置信号RESET,且其漏极连接第一晶体管T1的源极。第三晶体管T3的漏极连接第二晶体管T2的源极,其源极连接负栅极电压VGL,且其栅极 连接第一晶体管T1的源极及第一电容C1。第四晶体管T4的栅极连接一取样信号SAMPLE,其漏极连接第一电容C1,且其源极连接第二电容C2。第五晶体管T5的栅极连接一读取信号READ,其漏极连接第一晶体管T1的源极及第一电容C1,且其源极连接第三电容C3。 Fig. 4 is a circuit diagram of the
第一晶体管T1具有一感光层(图未示),其在接收一定环境光量时产生电荷载流子,该电荷载流子因第一晶体管T1的漏极与源极间的电压差移动以产生光电流I,光电流I的量值取决于所接收光量。请同时参考图4及图5,当扫描启始信号STV为高位准时,第一晶体管T1导通,此时正栅极电压VGH透过第一晶体管T1向第一电容C1进行充电动作。接着当重置信号RESET为高位准时,第二晶体管T2导通,此时第三晶体管T3亦导通使储存在第一电容C1的电量经由第三晶体管T3放电,如此第一电容C1的电位会下降至与第三晶体管T3的临限电压(threshold voltage)相等或几乎相等。紧接着当读取信号READ为高位准时,第五晶体管T5导通且第五晶体管T5的输出转换为第三电容C3的电位差,故可由第三电容C3取出参考电压Vref,此时参考电压Vref即为第三晶体管T3的临限电压(threshold voltage)。因为不同的晶体管T3的临限电压可能会有些许的不同,于此将第三晶体管T3的临限电压当作参考电压Vref的设计,可获得针对每一颗晶体管T3的特性调整出最适合的参考电压Vref以供光传感器10使用的效果。另一方面,当重置信号RESET为低位准时,第二晶体管T2关断故此时第一电容C1的电位随着光电流I流向第一电容C1对第一电容C1充电而逐步上升,且此时参考电压Vref均保持固定。因此,当取样信号SAMPLE为高位准时,此时第四晶体管T4导通且第四晶体管T4的输出转换为第二电容C2的电位差,故可由第二电容C2取出经环境光照射后变化后的光电压Vout,此时光电压Vout即为第一电容C1经由光电流I充电变化后的电位。 The first transistor T1 has a photosensitive layer (not shown), which generates charge carriers when it receives a certain amount of ambient light, and the charge carriers move due to the voltage difference between the drain and source of the first transistor T1 to generate The photocurrent I, the magnitude of the photocurrent I depends on the amount of light received. Please refer to FIG. 4 and FIG. 5 at the same time. When the scan start signal STV is at a high level, the first transistor T1 is turned on. At this time, the positive gate voltage VGH is charged to the first capacitor C1 through the first transistor T1 . Then when the reset signal RESET is at a high level, the second transistor T2 is turned on, and at this time the third transistor T3 is also turned on so that the electric quantity stored in the first capacitor C1 is discharged through the third transistor T3, so that the potential of the first capacitor C1 will be down to be equal or almost equal to the threshold voltage of the third transistor T3. Then when the read signal READ is at a high level, the fifth transistor T5 is turned on and the output of the fifth transistor T5 is converted into the potential difference of the third capacitor C3, so the reference voltage Vref can be taken out by the third capacitor C3, at this time the reference voltage Vref That is, the threshold voltage of the third transistor T3. Because the threshold voltage of different transistors T3 may be slightly different, the design of using the threshold voltage of the third transistor T3 as the reference voltage Vref can obtain the most suitable adjustment for the characteristics of each transistor T3. The reference voltage Vref is used for the effect of the
第一电容C1的电位变化显示如图6,由图6可清楚看出,通过第二晶体管T2及第三晶体管T3协同的自动归零(auto-zero)放电动作,第一电容C1的 电位可由正栅极电压VGH下降至相等或接近于第三晶体管T3的临限电压,且该临限电压即可输出作为一固定的参考电压Vref。其后第一电容C1的电位随着环境光照射逐步上升,最后取样而得的输出光电压Vout与参考电压Vref具有一电位差ΔV。如图7所示,处理单元12接收输出光电压Vout及参考电压Vref以产生对应光电压与参考电压的差值的一输出信号。详言之,处理单元12包含一放大器14及一模拟数字转换器(ADC)16,取样测得的输出光电压Vout与参考电压Vref的差值ΔV经由放大器14放大后,再由模拟数字转换器16转换成数字辉度控制信号,之后依据辉度控制信号量值调整背光亮度,如此可同时符合提供良好显示效果及降低耗电量的要求。 The potential change of the first capacitor C1 is shown in Figure 6. It can be clearly seen from Figure 6 that through the coordinated auto-zero discharge action of the second transistor T2 and the third transistor T3, the potential of the first capacitor C1 can be determined by The positive gate voltage VGH drops to be equal to or close to the threshold voltage of the third transistor T3, and the threshold voltage can be output as a fixed reference voltage Vref. Afterwards, the potential of the first capacitor C1 gradually rises with ambient light irradiation, and the finally sampled output photovoltage Vout and the reference voltage Vref have a potential difference ΔV. As shown in FIG. 7 , the
通过上述实施例的设计,光传感器10每次进行重置(reset)动作时,储存电容电压可通过重置电路的自动归零(auto-zero)放电动作下降至第三晶体管T3的临限电压(参考电压),之后再随光照逐步上升,如此光传感器10可相对参考电压获得一较大的输出光电压变化范围。再者,因输出光电压与参考电压均由同一电路取出,可有效减少电路元件数及布局面积以节省成本。另一方面,光传感晶体管(第一晶体管T1)一般都在负电压工作区间操作,因为此一区间的电流特性较佳,然而长时间受到负偏压的情况下,会产生明显的临限电压偏移(threshold voltage shift)现象而容易造成损坏。因此,本实施例设计使栅极偏压信号于一个帧(frame)周期触发一次,使第一晶体管T1轮流受到正偏压(正栅极电压VGH)及负偏压(光照电压)作用,如此可有效避免临限电压偏移产生。 Through the design of the above-mentioned embodiment, each time the
图8为依本发明另一实施例的光传感器20的电路图,图9为输入图8的光传感器20的信号的时序图。请同时参考图8及图9,于本实施例因读取信号READ同时连接第五晶体管T5的栅极和第三晶体管T3的源极,如此当读取信号READ为高位准时可使第三晶体管T3关断。 FIG. 8 is a circuit diagram of a light sensor 20 according to another embodiment of the present invention, and FIG. 9 is a timing diagram of signals input to the light sensor 20 of FIG. 8 . Please refer to FIG. 8 and FIG. 9 at the same time. In this embodiment, the gate of the fifth transistor T5 and the source of the third transistor T3 are simultaneously connected by the read signal READ, so that the third transistor can be activated when the read signal READ is at a high level. T3 is turned off. the
图10为依本发明另一实施例的光传感器30的电路图,输入图10的光传感器30的信号时序图可与图9类似。如图10所示,光传感器30包含一传感电路32、一参考电压产生电路34及一处理单元36。传感电路32包含一第一 晶体管T1、一第二晶体管T2、一第三晶体管T3、一第四晶体管T4、一第一电容C1及一第二电容C2。第一晶体管T1的输入端连接正栅极电压VGH,其控制端连接一扫描启始信号STV,且其输出端连接第一电容C1。第二晶体管T2的输入端连接第一晶体管T1的输出端,且第二晶体管T2的控制端连接一重置信号RESET。第三晶体管T3的输入端连接第二晶体管T2的输出端,第三晶体管T3的控制端连接第一电容C1,且第三晶体管的输出端连接负栅极电压VGL。第四晶体管T4的输入端连接第一电容C1,其控制端连接读取信号READ,且其输出端连接第二电容C2。参考电压产生电路34包含一第五晶体管T5、一第六晶体管T6、一第七晶体管T7、一第八晶体管T8、一第三电容C3及一第四电容C4。参考电压产生电路34的电路连接关系与传感电路32类似,故于此不再重复描述,两者的主要差别在于参考电压产生电路34另设置一遮光元件(light blocking member)BM用以屏蔽第五晶体管T5使其免于遭受外部光照射。反之,传感电路32的第一晶体管T1接受外部光照射并产生一对应所接收光量的光电压。因此,传感电路32可输出对应所接收光量而变化的光电压Vout,参考电压产生电路34则输出固定的参考电压Vref,且处理单元36接收光电压Vout及参考电压Vref以产生对应两者差值的一输出信号。处理单元36可例如图7所示包含一放大器14及一模拟数字转换器(ADC)16。于本实施例中,传感电路32的第二晶体管T2及第三晶体管T3同样回应重置信号RESET进行前述的电位自动归零(auto-zero)放电操作以提供一初始化的光电压,且参考电压产生电路34的第六晶体管T6及第七晶体管T7同样回应重置信号RESET进行电位自动归零放电操作以提供一初始化的参考电压。 FIG. 10 is a circuit diagram of an
以上所述仅为举例性,而非为限制性者。任何熟悉该项技术者均可依据上述本发明的实施例进行等效的修改,而不脱离其精神与范畴。故任何未脱离本发明的精神与范畴,而对其进行的等效修改或变更,均应包含于前附的权利要求中。 The above descriptions are illustrative only, not restrictive. Anyone skilled in the art can make equivalent modifications based on the above-mentioned embodiments of the present invention without departing from its spirit and scope. Therefore, any equivalent modification or change without departing from the spirit and scope of the present invention shall be included in the appended claims. the
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