CN101621068B - Image sensor - Google Patents
Image sensor Download PDFInfo
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- CN101621068B CN101621068B CN2009101618176A CN200910161817A CN101621068B CN 101621068 B CN101621068 B CN 101621068B CN 2009101618176 A CN2009101618176 A CN 2009101618176A CN 200910161817 A CN200910161817 A CN 200910161817A CN 101621068 B CN101621068 B CN 101621068B
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Abstract
The invention relates to an image sensor which comprises an optical sensing element, a first transistor and a second transistor. The optical sensing element is provided with a first end and a second end, wherein the second end is electrically connected to a selecting wire. The first transistor is provided with a first end, a control end and a second end, wherein the first end is electrically connected to a first control wire; the control end is electrically connected to the first end, and the second end is electrically connected to the first end of the optical sensing element. The second transistor is provided with a first end, a control end and a second end, wherein the first end is electrically connected to a voltage source, the control end is electrically connected to the first end of the optical sensing element, and the second end is electrically connected to an output wire; the optical sensing element is made of silicon rich oxide materials, can be used for sensing the luminance change, has the characteristics of an integrating capacitor and can be used for lifting an electrical level.
Description
Technical field
The invention relates to a kind of imageing sensor, refer to the imageing sensor of the rich silica of a kind of use silicon (silicon richoxide) material especially.
Background technology
The general pattern transducer utilizes after the signal amplification of the built-in amplifier element of each pixel with opto-electronic conversion, and each pixel utilizes the mode of XY addressing to select to take out the voltage of signals value again.Because the built-in amplifier element of pixel, after being subjected to rayed, photoelectric cell can produce the sensing signal of optical charge, amplified via internal amplifier, so this sensing signal during to external control circuit, more is not vulnerable to The noise by internal delivery.By circuit framework, three factors are depended in the sensitivity of imageing sensor at least.First factor of influence is the area size of Photosensing Units, and basically, the area of the Photosensing Units under the equal illumination is proportional to the sense charge amount; When area increased, the quantity of electric charge that optical sensor produces also increased thereupon.Second factor of influence is the size of integrating capacitor value, and in theory, under identical amounts of stored charge, the voltage at capacitor two ends is inversely proportional to the size of capacitance; That is when capacitance increases, the voltage at electric capacity two ends will be lowered.The 3rd factor of influence is the gain of sense amplifying circuits.
Summary of the invention
Therefore, a purpose of the present invention is to provide a kind of imageing sensor.
The invention provides a kind of imageing sensor, comprise Photosensing Units, the first transistor and transistor seconds.This Photosensing Units has first end, and second end is electrically connected at a selection wire.This first transistor has first end and is electrically connected at first control line, and a control end is electrically connected at this first end, and second end is electrically connected at first end of this Photosensing Units.This transistor seconds has first end and is electrically connected at voltage source, and control end is electrically connected at first end of this Photosensing Units, and second end is electrically connected at an output line.
The present invention also provides a kind of imageing sensor, comprises Photosensing Units, diode and source follower.This Photosensing Units has first end, and second end is electrically connected at a selection wire.This diode has first end and is electrically connected at a control line, and second end is electrically connected at first end of this Photosensing Units.This source follower has first end that an input is electrically connected at this Photosensing Units, and an output is electrically connected at an output line, is used for exporting the sensing voltage that this Photosensing Units produces.
The present invention also provides a kind of method of using the imageing sensor sensing brightness to change, this imageing sensor comprises Photosensing Units and has first end, and second end be electrically connected at a selection wire, the first transistor has first end and is electrically connected at a control line, control end is electrically connected at this first end, and second end is electrically connected at first end of this Photosensing Units; And transistor seconds, have first end and be electrically connected at voltage source, control end is electrically connected at first end of this Photosensing Units, and second end be electrically connected at an output line, this method comprises: this control line transmission high level voltage is with this first transistor conducting, with the voltage level of this Photosensing Units of resetting; This control line transmission low level voltage is closed this first transistor, makes this Photosensing Units induction light produce voltage difference; And this selection wire transmits this high level voltage so that this voltage difference is transferred to this output line via this transistor seconds.
Description of drawings
Fig. 1 is the schematic diagram of first embodiment of imageing sensor of the present invention.
Fig. 2 is the time sequential routine figure of imageing sensor of the present invention.
Fig. 3 is the element section figure of imageing sensor.
Fig. 4 is the schematic diagram of second embodiment of imageing sensor of the present invention.
Fig. 5 is the schematic diagram of the 3rd embodiment of imageing sensor of the present invention.
[main element label declaration]
30,50,60 imageing sensors, 21,51 the first transistors
22,52,62 Photosensing Units, 65 integrating condensers
24,54,64 transistor secondses, 55,66 the 3rd transistors
25,55,65 reference current sources, 61 diodes
211,241 grids, 212,242 drain electrodes
213,243 source electrodes, 31 substrates
32 grid oxic horizons, 33 first insulating barriers
34 second insulating barriers
T0 reset phase T1 integration phase
T2 fetch phase VDD voltage source
VREF reference voltage VSS low level voltage
S1 reset signal line S2 column selection line
S3 line output line
Embodiment
Please refer to Fig. 1, Fig. 1 is the schematic diagram of first embodiment of imageing sensor 30 of the present invention.Imageing sensor 30 comprises the first transistor 21, Photosensing Units 22, transistor seconds 24 and reference current source 25.In the present invention, Photosensing Units 22 can be metal level, the rich silica of silicon (silicon richoxide) layer and the formed electric capacity of a transparent metal layer, be used as photodetector and integrating capacitor and use, wherein the material of transparent metal layer tin indium oxide (ITO) for example.One end of Photosensing Units 22 is electrically connected at column selection line S2, and the other end of Photosensing Units 22 is electrically connected at the source electrode of the first transistor 21 and the grid of transistor seconds 24; The grid of the first transistor 21 electrically connects with drain electrode and forms a diode element, and is controlled by reset signal line S1; The drain electrode of transistor seconds 24 is electrically connected at voltage source V DD, the grid of transistor seconds 24 is electrically connected at the source electrode of Photosensing Units 22 and the first transistor 21, form a source follower (source follower) and be used as electric charge-voltage amplifier circuit, the source electrode of transistor seconds 24 is electrically connected at column output line S3.Reference current source 25 is electrically connected at column output line S3, and reference current source 25 provides output current according to a reference voltage VREF.
Please refer to Fig. 2, Fig. 2 is the time sequential routine figure of imageing sensor 30 of the present invention.The time sequential routine of imageing sensor 30 is broadly divided into reset phase T0, integration phase T1 and fetch phase T2.The operating instruction of imageing sensor 30 such as following 6 steps:
Step 1: when reset signal S1 when low level (VSS), the node A3 current potential of Photosensing Units 22 is in suspension joint (floating) state.When reset signal S1 is converted to high level (VREF) by low level (VSS), imageing sensor 30 enters reset phase T0, the first transistor 21 formed diode elements will be switched in forward bias voltage drop because of element operation, in reset signal S1 is the stage of high level (VREF), the node A3 of Photosensing Units 22 will be charged to voltage level (VREF-Vth) in forward bias voltage drop because of diode operation this moment, and wherein Vth is the critical voltage value of the first transistor 21.
Step 2: when reset signal S1 is converted to low level (VSS) by high level (VREF), the first transistor 21 formed diode elements will be closed at reverse bias because of element operation, the voltage difference of two ends of Photosensing Units 22 is (VREF-Vth)-VSS at this moment, and the node A3 current potential of Photosensing Units 22 will be in floating, and imageing sensor 30 will enter integration phase T1 this moment.
Step 3: when imageing sensor 30 during at integration phase T1, the node A3 current potential of Photosensing Units 22 will change along with irradiation intensity.When Photosensing Units 22 is subjected to rayed, the node A3 of Photosensing Units 22 will produce optical charge, these optical charges can in and the store charge of the node A3 of Photosensing Units 22, cause Photosensing Units 22 both end voltage differences to diminish, when irradiation intensity heals when big, the decline of the node A3 current potential of Photosensing Units 22 bigger, for example when Lux B＞Lux A, the descending slope mB＞mA of node A3 current potential.
Step 4: because the first transistor 21 formed diode elements are closed at reverse bias because of element operation, therefore the node A3 current potential of Photosensing Units 22 still is in floating, when array selecting signal S2 is converted to high level (VREF) by low level (VSS), node A3 because Photosensing Units 22 (having capacitance characteristic) two ends potential difference can instantaneous variation characteristic, node A3 current potential will be raised magnitude of voltage (VREF-VSS).
Step 5: when the node A3 of Photosensing Units 22 is raised magnitude of voltage (VREF-VSS) because Photosensing Units 22 has the characteristic of electric capacity, the magnitude of voltage of node A3 will enough be opened the transistor seconds 24 of source follower this moment.
Step 6: when the transistor seconds 24 of source follower is opened, voltage level after the node A3 that the signal of line output line S3 (being node A4) will be exported Photosensing Units 22 is raised deducts the initial critical voltage Vth of transistor seconds 24, for instance, be VA-Vth when irradiation intensity Lux A or when irradiation intensity Lux B, be VB-Vth.
Please refer to Fig. 3, Fig. 3 is the element section figure of imageing sensor 30.The first transistor 21 and transistor seconds 24 are formed in the substrate 31, comprise grid oxic horizon 32, first insulating barrier 33 and second insulating barrier 34 between the first transistor 21, transistor seconds 24 and the Photosensing Units 22.The first transistor 21 is a nmos pass transistor, comprises grid 211, source electrode 212 and drains 213; Transistor seconds 24 is a nmos pass transistor, comprises grid 241, source electrode 242 and drains 243.Photosensing Units 22 comprises metal level 221, the rich silicon oxide layer 222 of silicon and transparent metal layer 223.
Please refer to Fig. 4, Fig. 4 is the schematic diagram of second embodiment of imageing sensor 50 of the present invention.Imageing sensor 50 comprises the first transistor 51, Photosensing Units 52, transistor seconds 54 and the 3rd transistor 55.In the present embodiment, utilize the 3rd transistor 55 to replace reference current source 25.Line output line S3 is electrically connected at the drain electrode of the 3rd transistor 55, and the grid of the 3rd transistor 55 is controlled by holding wire Vb, and the source electrode of the 3rd transistor 55 electrically is connected to reference voltage source VREF.
Please refer to Fig. 5, Fig. 5 is the schematic diagram of the 3rd embodiment of imageing sensor 60 of the present invention.Imageing sensor 60 comprises diode 61, Photosensing Units 62, transistor seconds 64, sampling capacitor 65 and the 3rd transistor 66.In the present embodiment, utilize sampling capacitor 65 and the 3rd transistor 66 to replace reference current source 25.In addition, diode 61 has also replaced the first transistor 21.Line output line S3 is electrically connected at and the drain electrode of the 3rd transistor 65 and an end of sampling capacitor 65, the grid of the 3rd transistor 65 is controlled by holding wire REST2, the source electrode of the 3rd transistor 65 is electrically connected at the other end of sampling capacitor 65, and is electrically connected at reference voltage source VREF.
In sum, imageing sensor of the present invention comprises Photosensing Units, the first transistor and transistor seconds.This Photosensing Units has first end, and second end is electrically connected at a selection wire.This first transistor has first end and is electrically connected at first control line, and a control end is electrically connected at this first end, and second end is electrically connected at first end of this Photosensing Units.This transistor seconds has first end and is electrically connected at a voltage source, and control end is electrically connected at first end of this Photosensing Units, and second end is electrically connected at an output line.Wherein this Photosensing Units uses the rich oxide materials of silicon, makes this Photosensing Units can be used to sensing brightness and changes, and has the characteristic of integrating capacitor simultaneously, can be used as level and promotes use.Therefore, imageing sensor of the present invention uses the Photosensing Units of two transistors and the rich silica of silicon, can simplify circuit structure.
The above only is preferred embodiment of the present invention, and all equalizations of being done according to claim scope of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (9)
1. imageing sensor comprises:
Photosensing Units has first end, and second end is electrically connected at a selection wire;
The first transistor has first end and is electrically connected at first control line, and control end is electrically connected at first end of this first transistor, and second end is electrically connected at first end of this Photosensing Units; And
Transistor seconds has first end and is electrically connected at voltage source, and control end is electrically connected at first end of this Photosensing Units, and second end is electrically connected at an output line;
Wherein, this Photosensing Units comprises:
Metal level is electrically connected at second end of this first transistor;
Transparent metal layer is electrically connected at this selection wire; And
The rich silicon oxide layer of silicon is formed between this metal level and this transparent metal layer.
2. imageing sensor according to claim 1 also comprises:
Current source is electrically connected at this output line.
3. imageing sensor according to claim 2, wherein this current source comprises:
The 3rd transistor has first end and is electrically connected at this output line, and control end is electrically connected at second control line, and second end is electrically connected at reference voltage source.
4. imageing sensor according to claim 3, wherein this current source also comprises:
Electric capacity has first end and be electrically connected at this output line, and second end is electrically connected at this reference voltage source.
5. imageing sensor comprises:
Photosensing Units has first end, and second end is electrically connected at a selection wire;
Diode has first end and is electrically connected at control line, and second end is electrically connected at first end of this Photosensing Units; And
Source follower has first end that input is electrically connected at this Photosensing Units, and output is electrically connected at an output line, is used for exporting the sensing voltage that this Photosensing Units produces;
Wherein, this Photosensing Units comprises:
Metal level is electrically connected at second end of this diode;
Transparent metal layer is electrically connected at this selection wire; And
The rich silicon oxide layer of silicon is formed between this metal level and this transparent metal layer.
6. imageing sensor according to claim 5 also comprises:
Current source is electrically connected at this output line.
7. imageing sensor according to claim 5 also comprises:
Voltage source is electrically connected at this source follower.
8. imageing sensor according to claim 7, wherein this source follower comprises:
Transistor has drain electrode and is electrically connected at this voltage source, and grid is electrically connected at first end of this Photosensing Units, and source electrode is electrically connected at this output line.
9. method of using the imageing sensor sensing brightness to change, this imageing sensor comprises Photosensing Units and has first end, and second end be electrically connected at a selection wire, the first transistor has first end and is electrically connected at a control line, control end is electrically connected at first end of this first transistor, and second end is electrically connected at first end of this Photosensing Units; And transistor seconds, having first end and be electrically connected at voltage source, control end is electrically connected at first end of this Photosensing Units, and second end is electrically connected at an output line, and this method comprises:
This control line transmission high level voltage is with this first transistor conducting, with the voltage level of this Photosensing Units of resetting;
This control line transmission low level voltage is closed this first transistor, makes this Photosensing Units induction light produce voltage difference; And
This selection wire transmits this high level voltage so that this voltage difference is transferred to this output line via this transistor seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101618176A CN101621068B (en) | 2009-08-03 | 2009-08-03 | Image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101618176A CN101621068B (en) | 2009-08-03 | 2009-08-03 | Image sensor |
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| CN101621068A CN101621068A (en) | 2010-01-06 |
| CN101621068B true CN101621068B (en) | 2011-06-15 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376277B (en) * | 2010-08-05 | 2013-05-29 | 财团法人工业技术研究院 | Active light sensing pixel, active light sensing array and light sensing method |
| CN102376276B (en) * | 2010-08-05 | 2013-11-20 | 财团法人工业技术研究院 | Active light sensing pixel, active light sensing array and light sensing method |
| KR101906974B1 (en) * | 2011-04-25 | 2018-10-12 | 삼성전자주식회사 | Light sensing apparatus and method of driving the light sensing apparatus |
| CN108063905B (en) * | 2016-11-09 | 2020-04-14 | 京东方科技集团股份有限公司 | Pixel sensing circuit, driving method thereof, image sensor and electronic equipment |
| CN109309799B (en) * | 2018-11-20 | 2020-11-03 | 京东方科技集团股份有限公司 | Pixel sensing circuit, driving method thereof, image sensor and electronic equipment |
| WO2020211053A1 (en) * | 2019-04-18 | 2020-10-22 | Huawei Technologies Co., Ltd. | Pixel circuit and pixel control method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5898168A (en) * | 1997-06-12 | 1999-04-27 | International Business Machines Corporation | Image sensor pixel circuit |
| CN1681130A (en) * | 2004-03-30 | 2005-10-12 | 豪威科技有限公司 | Active pixel having buried transistor |
| CN101383387A (en) * | 2008-11-06 | 2009-03-11 | 友达光电股份有限公司 | Light sensing element and preparation thereof |
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2009
- 2009-08-03 CN CN2009101618176A patent/CN101621068B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5898168A (en) * | 1997-06-12 | 1999-04-27 | International Business Machines Corporation | Image sensor pixel circuit |
| CN1681130A (en) * | 2004-03-30 | 2005-10-12 | 豪威科技有限公司 | Active pixel having buried transistor |
| CN101383387A (en) * | 2008-11-06 | 2009-03-11 | 友达光电股份有限公司 | Light sensing element and preparation thereof |
Non-Patent Citations (1)
| Title |
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| JP特开2006-60574A 2006.03.02 |
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