CN107089636A - Microcomputer electric component with enhancing structure intensity - Google Patents
Microcomputer electric component with enhancing structure intensity Download PDFInfo
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- CN107089636A CN107089636A CN201610824062.3A CN201610824062A CN107089636A CN 107089636 A CN107089636 A CN 107089636A CN 201610824062 A CN201610824062 A CN 201610824062A CN 107089636 A CN107089636 A CN 107089636A
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- Prior art keywords
- metal level
- electric signal
- micro electromechanical
- electromechanical structure
- metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
- B81B7/0019—Protection against thermal alteration or destruction
Abstract
The present invention provides a kind of microcomputer electric component with enhancing structure intensity, comprising multiple metal levels, and multiple metal levels include a most upper metal level, and this most upper metal level includes multiple independent metals section；Wherein, the plurality of independent metal section is respectively by an at least supporting pillar to be connected to adjacent metal level, and between the superiors' independent metal section metal level adjacent with this in addition to supporting pillar, no dielectric layer is disposed therein；In addition to the most upper metal level, remaining metal level is connected to each other by an at least supporting pillar and a dielectric layer with adjacent metal level respectively.
Description
The application is that on October 14th, 2013 is submitting, Application No. 201310478753.9, entitled " had
The divisional application of the application of the microcomputer electric component of enhancing structure intensity ".
Technical field
The present invention relates to a kind of microcomputer electric component with enhancing structure intensity, micro electromechanical structure is particularly wherein constituted
The most lower metal layer that most upper metal level has multiple independent metal sections and/or wherein composition micro electromechanical structure has continuous structure
Microcomputer electric component.
Background technology
Reference picture 1, wherein showing the schematic diagram of the microcomputer electric component 10 of a prior art, it can be used as a stator
Or a mover (Rotor) (Stator).Microcomputer electric component 10 includes micro electromechanical structure 101 and electric signal transmission circuit 102, wherein
Micro electromechanical structure 101 produces electric signal, transmits circuit 102 to transmit by electric signal.It is micro- when microcomputer electric component 10 is stator
Electromechanical structure 101 for example can be connected to substrate Sub by fixed structure 103, when microcomputer electric component 10 is mover, then microcomputer
Electric structure 101 can for example be connected by flexible structure (such as spring, not shown).Microcomputer electric component 10 is for example using CMOS
Manufacture of semiconductor makes, on substrate Sub by alternating deposit more metal layers (M1-Mt) and dielectric layer and with supporting pillar
Connect metal level and constitute designed structure.
The microcomputer electric component 10 of prior art has following architectural feature：1. most upper metal level Mt is continuous structure.2.
Electric signal transmission circuit 102 is constituted using the first metal layer M1 a part of M1S, thus in order to avoid signal is impacted and
Avoid producing in making and action process and be stained with phenomenons such as glutinous (Stiction), second metal layer M2 must be in part M1S top
Hollow out to leave enough cushion spaces, but this hollows out part can undermine the rigidity of micro electromechanical structure 101.
When the rigidity of micro electromechanical structure 101 is not enough, it is easy to produce prying deformation.For example, when on operating ambient temperature
When rising, the microcomputer electric component 10 of prior art can produce obvious thermal deformation so that the feature operation of influence microcomputer electric component 10.
In detail, Fig. 6 A show microcomputer electric component 10 in Fig. 1 it is heated after change, trunnion axis X is X-direction in reference picture 1
Extended distance, Y-axis is deflection, wherein temperature T2 be higher than T1.As illustrated, the thermal deformation that temperature T2 is caused is higher than temperature T1
The thermal deformation caused, and thermal deformation in X direction gradually increases, this deformation is enough influenceing the stabilization of structure and element operation just
True property etc..
In view of this, the present invention is directed to above-mentioned the deficiencies in the prior art, proposes a kind of micro- with enhancing structure intensity
Electromechanical compo, it can be reduced because being deformed caused by temperature or other reasons, prevented from sticking together (stiction), structure is kept steady
Determine, and element is had in electric signal transmission preferably to show.
The content of the invention
It is an object of the invention to overcome shortcomings and deficiencies of the prior art, propose a kind of micro- with enhancing structure intensity
Electromechanical compo, it can be reduced because being deformed caused by temperature or other reasons, prevented from sticking together (stiction), structure is kept steady
Determine, and element is had in electric signal transmission preferably to show.
For up to above-mentioned purpose, according to one of viewpoint, the present invention provides a kind of micro electronmechanical with enhancing structure intensity
Element, comprising：One micro electromechanical structure, including multiple metal levels, with a most upper metal level, the most upper metal level is comprising multiple only
Vertical metal segments；And an electric signal transmission circuit, below the micro electromechanical structure, wherein the micro electromechanical structure produces telecommunication
Number, transmit circuit to transmit by the electric signal；Wherein, the plurality of independent metal section is respectively by an at least supporting pillar to connect
To adjacent metal level, and between the superiors' independent metal section metal level adjacent with this in addition to supporting pillar, no dielectric
Layer is disposed therein；In addition to the most upper metal level, remaining metal level respectively by an at least supporting pillar and a dielectric layer with phase
Adjacent metal level is connected to each other.
In one embodiment of the invention, a fixed structure or one should be further included with the microcomputer electric component of enhancing structure intensity
Flexible structure, is connected with the micro electromechanical structure.
In one embodiment of the invention, the fixed structure is connected to the micro electromechanical structure side.
In one embodiment of the invention, at the top that circuit is transmitted below the micro electromechanical structure, corresponding to the electric signal, tool
There is an area of knockout.
In one embodiment of the invention, the minimum metal level of the micro electromechanical structure is transmitting circuit corresponding to the electric signal
At top, extend direction toward the fixed structure, do not turned off to be continuous.
In the above-described embodiments, it is preferred that electric signal transmission circuit does not include metal level, but below metal level
Constituted in the rank of position with conductive material cabling.
In one embodiment of the invention, the fixed structure is connected to below the micro electromechanical structure.
In the above-described embodiments, it is preferred that transmitting the top of circuit below the micro electromechanical structure, corresponding to the electric signal
Place, with an area of knockout, and the area of knockout is compared to the central point for the fixed structure further away from the micro electromechanical structure.
For up to above-mentioned purpose, according to another viewpoint, the present invention provides a kind of microcomputer electric component with enhancing structure intensity,
Comprising：One micro electromechanical structure, including multiple metal levels；One fixed structure, is connected to the micro electromechanical structure side；And a telecommunication
Number transmission circuit, below the micro electromechanical structure, the wherein micro electronmechanical generation electric signal, by the electric signal transmit circuit come
Transmission, wherein, the minimum metal level of the micro electromechanical structure at the top that circuit is transmitted corresponding to the electric signal, extend and consolidate toward this
Determine the direction of structure, do not turned off to be continuous, and wherein the electric signal transmission circuit do not include metal level, but metal level with
Under position rank in constituted with conductive material cabling.
For up to above-mentioned purpose, according to another viewpoint, the present invention provides a kind of microcomputer electric component with enhancing structure intensity,
Comprising：One micro electromechanical structure, including multiple metal levels；One fixed structure, is connected to below the micro electromechanical structure；And a telecommunication
Number transmission circuit, below the micro electromechanical structure, the wherein micro electronmechanical generation electric signal, by the electric signal transmit circuit come
Transmission, wherein, at the top that circuit is transmitted below the micro electromechanical structure, corresponding to the electric signal, with an area of knockout, and should
Area of knockout is compared to the central point for the fixed structure further away from the micro electromechanical structure.
Below by specific embodiment elaborate, when be easier to understand the purpose of the present invention, technology contents, feature and its
The effect reached.
Brief description of the drawings
Fig. 1 shows the microcomputer electric component of prior art；
Fig. 2 shows the microcomputer electric component with enhancing structure intensity of one embodiment of the invention；
Fig. 3 shows the microcomputer electric component with enhancing structure intensity of one embodiment of the invention；
Fig. 4 shows the microcomputer electric component with enhancing structure intensity of one embodiment of the invention；
Fig. 5 shows the microcomputer electric component with enhancing structure intensity of one embodiment of the invention；
Fig. 6 A~6E shows the deflection of the microcomputer electric component of Fig. 1~5 respectively；
Fig. 7 shows the microcomputer electric component with enhancing structure intensity of one embodiment of the invention.
Symbol description in figure
10th, 20,30,40,50,70 microcomputer electric component
22 area of knockouts
101st, 201,301,401,501 micro electromechanical structure
102nd, 202,302,402,502 electric signals transmission circuit
103rd, 203,303,403,503 fixed structure
M1 the first metal layers
M11 first layers independent metal section
A part for M1S the first metal layers
M2 second metal layers
The metal levels of Mt-1 immediately below most upper metal level
The most upper metal levels of Mt
Mt1 the superiors independent metal section
T1, T2 temperature
S conductive materials
Sub substrates
V contact layers
X horizontal directions
Embodiment
For the present invention foregoing and other technology contents, feature and effect, one in following cooperation reference schema are preferable
In the detailed description of embodiment, can clearly it present.The direction term being previously mentioned in following examples, for example：Upper and lower, left,
It is right, front or rear etc., only it is the direction with reference to annexed drawings.Schema in the present invention belongs to signal, is mostly intended to represent each device
And the function relation between each element, as shape, thickness and width then and not according to ratio drafting.
Reference picture 2, wherein a kind of microcomputer electric component 20 with enhancing structure intensity provided for one embodiment of the invention
Schematic diagram.Microcomputer electric component 20 is included：Micro electromechanical structure 201 and the electric signal transfer line positioned at the lower section of micro electromechanical structure 201
The relative movement of road 202, wherein micro electromechanical structure 201 and other parts produces electric signal, by electric signal transmit circuit 202 come
Transmission.Micro electromechanical structure 201 includes multiple metal level M2-Mt that is, second metal layer M2 is to most upper metal level Mt, wherein most upper
Metal level Mt include be not joined directly together between multiple the superiors' independent metals section Mt1, the superiors independent metals section Mt1 and by
An at least supporting pillar and the metal level Mt-1 for being connected to adjacent (immediately below), must be it is specifically intended that the superiors' independent metal section
Between Mt1 and adjacent metal level Mt-1 in addition to supporting pillar, no dielectric layer is disposed therein.Remaining adjacent multiple metal level
(such as second metal layer M2 to metal level Mt-1) is interconnected, dielectric layer by an at least supporting pillar and a dielectric layer respectively
It can fill up and (at least partly fill up, it is illustrated that to be fully filled with) space of the adjacent metal interlayer in addition to supporting pillar, microcomputer electric component 20
By this design can enhancing structure intensity, specifically for when operating temperature rises, this design can reduce thermal deformation.
Fig. 6 B show microcomputer electric component 20 in Fig. 2 it is heated after deflection, relative to Fig. 6 A, the situation of its thermal deformation improves
It is many.Due to improving thermal deformation, therefore it can prevent from sticking together, make structure remained stable, this external component is in electric signal transmission
Have and preferably show.
In addition, the design of Fig. 2 microcomputer electric component 20 can be applied to stator or mover.It is micro electronmechanical when applied to stator
Structure 201 for example can be connected to substrate Sub by fixed structure 203, when applied to mover, then micro electromechanical structure 201
To be connected with other parts such as by flexible structure (such as spring, not shown).Fixed structure 203 for example can be by multiple metals
Layer M1-Mt and dielectric layer are constituted；Should be noted icon is only citing, and fixed structure 203 can be other shapes or height, for example may be used
Dielectric layer not comprising most upper metal level Mt and below.In the present embodiment, the lower section of micro electromechanical structure 201, corresponding to electricity
At the top of signal transmission circuit 202, provided with an area of knockout 22 to constitute cushion space, that is, micro electromechanical structure 201 is most
Low metal layer (in the present embodiment be M2) transmits and disconnected at the top of circuit 202 that (minimum dielectric layer can disconnect or not in electric signal
Disconnect, the present embodiment is disconnection).Electric signal transmission circuit 202 is made up of the first metal layer M1 a part of M1S.
Reference picture 3, wherein the one of display another embodiment of the present invention has the microcomputer electric component 30 of enhancing structure intensity
Schematic diagram.Compared with microcomputer electric component 20, the Main Differences of microcomputer electric component 30 is eliminate area of knockout and electric signal transfer line
Road 302 is changed into be constituted in contact layer V position rank with conductive material S cablings.Because electric signal transmission circuit 302 does not include the first gold medal
Belong to layer, but constituted in position rank below metal level with conductive material cabling, which increase cushion space, therefore minimum metal
Layer (the present embodiment be second metal layer M2) transmits the top of circuit 302 in electric signal, extends direction toward fixed structure 301,
It can be not necessary to disconnect to be continuous, so add the rigidity of structure.So-called " contact layer ", is used in the technology of cmos semiconductor processing procedure
In language, refer to substrate Sub to the articulamentum between the first metal layer M1, and more than the first metal layer M1 articulamentum is then used to be referred to as
" channel layer ".The characteristics of the present embodiment, to cancel area of knockout, can lift the intensity of microcomputer electric component 30, and then reduce thermal change
Shape.Conductive material S can be metal or the metallic compound such as tungsten, titanium, and it can be in the upper horizontal-extending in length and breadth of substrate Sub, rather than only
For column.
Identically with Fig. 2 embodiments, the design of microcomputer electric component 30 can be applied to stator or mover.When applied to stator
When, micro electromechanical structure 301 for example can be connected to substrate Sub by fixed structure 303, when applied to mover, then micro electronmechanical
Structure 301 can for example be come to be connected with other parts by flexible structure (such as spring, not shown).It is so-called " to eliminate and hollow out area
Domain ", the orlop metal level M2 and fixed structure 303 or flexible structure that also can be considered micro electromechanical structure 301 directly and completely connects
Connect.In addition, in Fig. 2,3 embodiments, the minimum metal level of micro electromechanical structure is explained by taking second metal layer M2 as an example, however it is real
This is not limited to when applying, or the 3rd or higher metal level, its end depends on the needs.
Reference picture 6C, wherein the deflection after microcomputer electric component 30 is heated in display Fig. 3, compared to Fig. 6 A, micro electronmechanical member
The situation of the thermal deformation of part 30 improves many, and more improves compared to Fig. 6 B.
It should be noted that, in Fig. 3 embodiments, cancel the design of area of knockout also can individualism, and be not limited to take
With in the superiors independent metals section Mt1, that is, Fig. 3 embodiments not being joined directly together, the most upper metal level Mt of micro electromechanical structure 301
Also can be continuous one.
Reference picture 4, according to another viewpoint, the present invention provides a kind of microcomputer electric component 40 with enhancing structure intensity, its
Comprising：Micro electromechanical structure 401, electric signal transmission circuit 402 and fixed structure 403, wherein micro electromechanical structure 401 include multiple gold
Belong to layer M2-Mt that is, second metal layer M2 to most upper metal level Mt, wherein most upper metal level Mt includes the independent gold of multiple the superiors
Belong to and be not joined directly together and be connected to by an at least supporting pillar adjacent (tight between section Mt1, the superiors independent metal section Mt1
Connect lower section) metal level Mt-1, between the superiors independent metals section Mt1 and adjacent metal level Mt-1 in addition to supporting pillar, nothing
Dielectric layer is disposed therein.Remaining adjacent multiple metal level (such as second metal layer M2 to metal level Mt-1) is respectively by extremely
Lack a supporting pillar and a dielectric layer and interconnect, dielectric layer can fill up and (at least partly fill up, it is illustrated that to be fully filled with) adjacent
Space of the metal interlevel in addition to supporting pillar.In the present embodiment, fixed structure 403 it is non-be arranged at such as Fig. 2 embodiments it is micro electronmechanical
The side of structure 401, and the lower section of micro electromechanical structure 401 is disposed on, it is regarded by top view direction, fixed structure 403 is set
In the inside of micro electromechanical structure 401.A part (first layer independent metal section of the fixed structure 403 comprising the first metal layer M1
M11), dielectric layer and the supporting pillar that micro electromechanical structure 401 is electrically connected into substrate sub (include first layer independent metal section
M11 top and lower section, picture mark position is only citing, the position of supporting pillar and number can according to electrical, mechanicalness and layout need
Ask to design arrangement).The lower section of micro electromechanical structure 401, corresponding to electric signal transmit circuit 402 top at, be still provided with one
Area of knockout 22 to constitute cushion space, but this area of knockout 22 or cushion space compared to for fixed structure 403 further away from
The central point of micro electromechanical structure 401 is (in Fig. 2 embodiments, for area of knockout 22 or cushion space are compared to fixed structure 203
The central point of closer micro electromechanical structure 201).
With reference to Fig. 5, wherein showing the microcomputer electric component 50 of another embodiment, the difference with Fig. 4 embodiments is：Micro electronmechanical member
Part 50 includes multiple (being illustrated as two, can be more) first layer independent metals section M11 or multiple fixed structures 503.With Fig. 4
Embodiment similarly, the lower section of micro electromechanical structure 501, corresponding to electric signal transmit circuit 502 top at, be still provided with a digging
Dummy section 22 to constitute cushion space, area of knockout 22 or cushion space compared to for fixed structure 503 further away from micro electronmechanical
The central point of structure 501.
Reference picture 6D, 6E, wherein the deformation after microcomputer electric component 50 is heated in microcomputer electric component 40 and Fig. 5 in display Fig. 4
Amount, it is not only better than Fig. 6 A, and compared to Fig. 6 B, the thermal deformation of microcomputer electric component 40,50 also more improves.That is, Fig. 6 D, 6E show
Show that the structure of microcomputer electric component is more stablized, therefore element also has in electric signal transmission and more preferably showed.
In Fig. 4,5 embodiments, the minimum metal level of micro electromechanical structure is explained by taking second metal layer M2 as an example, but
This is not limited to during implementation, or the 3rd or higher metal level, it depends on the needs.In the case, fixed structure
403rd, 503 accordingly the part comprising the first metal layer M1, a second metal layer M2 part (can also it include if necessary upper
A part for square metal level), dielectric layer and the supporting pillar that micro electromechanical structure 401,501 is electrically connected to substrate sub.
It should be noted that, in Fig. 4,5 embodiments, for making area of knockout 22 or cushion space compared to fixed structure 503
Further away from the central point of micro electromechanical structure 501, this design also can individualism, and be not limited to arrange in pairs or groups and be not joined directly together most
In upper strata independent metal section Mt1, that is, Fig. 4,5 embodiments, the most upper metal level Mt of micro electromechanical structure 401,501 also can be continuous
One.
Fig. 7 shows the microcomputer electric component 70 of another embodiment, and the difference with Fig. 2 embodiments is：Electric signal transmits circuit 202
(therefore fixed structure 203 can not be shown in figure, table a distance away with fixed structure 203 not close to fixed structure 203
It is shown with a segment distance).For example, this can be more than three times of length of the fixed structure 203 in the dimension apart from d.Implement herein
In example, fixed structure 203 can be arranged at the side of fixed structure 203 such as Fig. 2 embodiments, or such as Fig. 4,5 embodiments
It is arranged at the lower section of fixed structure 203.
Illustrate the present invention for preferred embodiment above, it is simply described above, only make those skilled in the art easy
In understand present disclosure, not for limit the present invention interest field.For those skilled in the art, when can be in this hair
In bright spirit, think immediately and various equivalence changes.For example, the number of supporting pillar and the number of plies of position, metal level and dielectric layer etc.,
All alterables.Therefore all concepts under this invention and spiritual equivalent change or modification for it, the right of the present invention all should be included in
In claimed range.
Claims (2)
1. a kind of microcomputer electric component with enhancing structure intensity, it is characterised in that include：
One micro electromechanical structure, including multiple metal levels, those metal levels include a most upper metal level, and the most upper metal levels of The are comprising more
Individual independent metal section, those independent metals Duan Fen Do by an at least supporting pillar to be connected to adjacent metal level, except this is most upper
Outside metal level, remaining metal level Fen Do are connected to each other by an at least supporting pillar and a dielectric layer with adjacent metal level；
One fixed structure, is connected to the micro electromechanical structure side；And
One electric signal transmits circuit, below the micro electromechanical structure, wherein the micro electronmechanical generation electric signal, passes through the electric signal
Circuit is transmitted to transmit,
Wherein, the minimum metal level of the micro electromechanical structure corresponding to the electric signal transmit circuit top at, extend toward this consolidate
Determine the direction of structure, do not turned off to be continuous, and wherein the electric signal transmission circuit do not include metal level, but metal level with
Under position rank in constituted with conductive material cabling, between the minimum metal level of the micro electromechanical structure and the electric signal transfer line keep
One space.
2. a kind of microcomputer electric component with enhancing structure intensity, it is characterised in that include：
One micro electromechanical structure, including multiple metal levels, those metal levels include a minimum metal level；
One fixed structure, is connected to below the micro electromechanical structure；And
One electric signal transmits circuit, below the micro electromechanical structure, wherein the micro electronmechanical generation electric signal, passes through the electric signal
Circuit is transmitted to transmit,
Wherein, the micro electromechanical structure has an area of knockout, and position is below the micro electromechanical structure, corresponding to the electric signal transfer line
At the top on road, and the area of knockout, compared to the central point for the fixed structure further away from the micro electromechanical structure, this is minimum
Metal level is not extend at the top of electric signal transmission circuit, to form the area of knockout.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610824062.3A CN107089636B (en) | 2013-10-14 | 2013-10-14 | Microcomputer electric component with enhancing structure intensity |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610824062.3A CN107089636B (en) | 2013-10-14 | 2013-10-14 | Microcomputer electric component with enhancing structure intensity |
| CN201310478753.9A CN104555884B (en) | 2013-10-14 | 2013-10-14 | Micro electro mechanical element with enhanced structural strength |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310478753.9A Division CN104555884B (en) | 2013-10-14 | 2013-10-14 | Micro electro mechanical element with enhanced structural strength |
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| CN107089636A true CN107089636A (en) | 2017-08-25 |
| CN107089636B CN107089636B (en) | 2019-06-18 |
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| CN201610824062.3A Active CN107089636B (en) | 2013-10-14 | 2013-10-14 | Microcomputer electric component with enhancing structure intensity |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN107089636B (en) | 2019-06-18 |
| CN104555884B (en) | 2017-04-12 |
| CN104555884A (en) | 2015-04-29 |
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