JP2015102867A - Organic light-emitting diode storage capacitor structure and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To lighten a capacitance area while holding capacitance.SOLUTION: A storage capacitor structure includes a polycrystalline silicon layer, a first isolation layer, a first metal layer, a second isolation layer, a second metal layer, and a third isolation layer which are sequentially set on a glass base. The first metal layer and the second metal layer are parallel to each other and form a first capacitance, a third metal layer is formed on the third isolation layer, the third metal layer and the second metal layer are parallel to each other and form a second capacitance. A contact hole is formed at a position where the second isolation layer and the third isolation layer are symmetrical to the first metal layer and the third metal layer, the second metal layer forms a space avoiding the contact hole, the third metal layer and the first metal layer are connected and conduct via the contact hole, and form parallel connection of the first capacitance and the second capacitance. By adding one third metal layer to the first capacitance, the layer and the second metal layer form the second capacitance, and the second capacitance and the first capacitance are parallelly connected by the contact hole.

Description

  The present invention relates to a pixel layout technique of a kind of AMOLED backplane, and more particularly to a kind of organic light emitting diode storage capacitor structure and a method for manufacturing the same.

  Currently, the storage capacitance is the largest component of the pixel layout area of the AMOLED backplane. As shown in FIGS. 1 and 2, the storage capacitance is composed of two upper and lower parallel metal layers 21 and 22. The larger the area of the metal layer, the greater the capacitance and the greater the storage capacity. If the area of the storage capacitance can be reduced, the area of the pixel panel can be greatly reduced, so that the demand for accurate pixel interpolation (abbreviated as PPI) demand can be satisfied. However, if the storage capacitance area is reduced, the storage capacity of the capacitance is also reduced, which affects the driving capability of the pixel circuit.

  As the resolution of AMOLED products increases, screen quality requirements increase, pixel sizes become smaller, and pixel circuits become more complex. At the same time as the storage capacitance plane area is reduced, maintaining the capacitance capacity and maintaining the electrical requirements are the key technical research directions.

  The present invention solves the technical problem of realizing an organic light emitting diode storage capacitor structure that reduces the planar area of the capacitance and improves the pixel quality on the premise that the capacitance does not change.

  In order to solve the above problems, the present invention discloses a kind of organic light emitting diode storage capacitor structure. The structure includes one polycrystalline silicon layer, one first insulating layer, one first metal layer, one second insulating layer, one second metal layer, and a third insulating layer sequentially set on a glass base. The first metal layer and the second metal layer, which are composed of one, are parallel to each other to form one first capacitance. Among them, the second insulating layer in which one third metal layer is set on the third insulating layer, the third metal layer and the second metal layer are parallel to each other, and one second capacitance is formed. And the third insulating layer has a contact hole formed at a position opposite to the first metal layer and the third metal layer, and the second metal layer has formed an avoidance space to avoid the contact hole. Since the metal layer and the first metal layer contact and conduct through the contact hole, a parallel connection of the first capacitance and the second capacitance is formed.

  The present invention employs the above technical solution, and thus has the following beneficial effects. By adding one third metal layer to the first capacitance composed of the first metal layer and the second metal layer in the three-dimensional space, one second capacitance is composed of it and the second metal layer. The first metal layer and the third metal layer are contacted and conducted in the hole, and the second capacitance and the first capacitance constitute two capacitance structures connected in parallel with each other. As a result, the planar area of the storage capacitance is reduced, and at the same time, the capacitance is retained and the driving capability of the pixel circuit is not affected.

  Further improvements according to the present invention are as follows. The area of the avoidance space is larger than the area of the contact hole. The material of the third insulating layer is deposited and filled between the avoidance space and the contact hole. When creating the second metal layer, it is necessary to avoid the contact hole contrast position. Also, since the avoidance range is larger than the contact hole, the third insulating layer is deposited. After the contact hole etching is finished, a certain third insulating layer material is retained on the side wall of the second metal layer, and the third insulating layer is retained. When the metal layer is deposited, avoid flowing into the contact hole and contacting the second metal layer on the side.

  The present invention also discloses a method of manufacturing a kind of organic light emitting diode storage capacitor structure. In order to form one polycrystalline silicon layer, one first insulating layer, one first metal layer, one second insulating layer, one second metal layer, and one third insulating layer on a glass base, The first metal layer and the second metal layer are parallel to each other to form a first capacitance. Among them, when forming the second metal layer, one avoidance space is formed, and the third insulating layer is formed on the second metal layer. The material of the third insulating layer is deposited in the avoidance space.

  Contact holes are formed at positions where the second insulating layer and the third insulating layer are symmetrical to the first metal layer and the avoidance space.

  One third metal layer is formed on the third insulating layer, and the third metal layer and the second metal layer are parallel to each other to form one second capacitance. Further, in order to contact and conduct the third metal layer and the first metal layer in the contact hole, a parallel connection of the first capacitance and the second capacitance is formed.

FIG. 1 is an image of an existing storage capacitor structure. FIG. 2 is a local cross-sectional view of FIG. FIG. 3 is an image of the organic light emitting diode storage capacitor structure of the present invention. 4 is a local cross-sectional view of FIG. FIG. 5 is a local circuit diagram of the organic light emitting diode storage capacitor structure of the present invention.

  Next, the present invention will be described in more detail with reference to the drawings and specific implementation methods.

  The present invention has disclosed a kind of organic light emitting diode storage capacitor structure. 3 to 5, the glass base 11 has one polycrystalline silicon layer 12, one first insulating layer 13, one first metal layer 14, one second insulating layer 15, One bimetallic layer 16 and one third insulating layer 17 were sequentially set. The first metal layer 14 and the second metal layer 16 are parallel to each other to form one first capacitance C1.

  The third insulating layer 17 has one third metal layer 18, and the third metal layer 18 and the second metal layer 16 are parallel to each other to form one second capacitance C2. A contact hole 19 is formed at a position where the second insulating layer 15 and the third insulating layer 17 are symmetric with respect to the first metal layer 14 and the third metal layer 18, and the second metal layer 16 has a space to avoid the contact hole 19. 190 was formed. After the area of the avoidance space 190 is larger than the area of the contact hole 19, and the material of the third insulating layer 17 is deposited and filled between the avoidance space 190 and the contact hole 19 and the etching of the contact hole 19 is finished, A certain material of the third insulating layer 17 is left on the side wall of the bimetallic layer 16, and when the third metallic layer 18 is deposited, it flows into the contact hole 19 to avoid contact with the lateral second metallic layer 16. The third metal layer 18 has a structure in which the first capacitance C1 and the second capacitance C2 are connected in parallel through the contact hole 19 in direct contact with and conduction with the first metal layer 14.

  The manufacturing method of the organic light emitting diode storage capacitor structure of the present invention mainly includes the following steps.

  A polycrystalline silicon layer 12 is deposited on the glass base 11, a first insulating layer 13 is formed on the polycrystalline silicon layer 12, a first metal layer 14 is formed on the first insulating layer 13, and etching is performed. The second insulating layer 15 is re-formed on the first metal layer 14, the second metal layer 16 is re-formed on the second insulating layer 15, and etching is performed. The first metal layer 14 and the second metal layer 16 are parallel to each other to form the first capacitance C1, and when the second metal layer 16 is formed, the second metal layer 16 is etched to form an avoidance space 190. The third insulating layer 17 is deposited on the second metal layer 16, the material of the third insulating layer 17 is deposited inside the avoidance space 190, and a certain material of the third insulating layer 17 is formed on the side wall of the second metal layer 16. Leave.

  Next, the contact hole 19 is formed at a position where the second insulating layer 15 and the third insulating layer 17 are symmetric with respect to the first metal layer 14 and the avoidance space 190.

  One third metal layer 18 is deposited on the third insulating layer 17 and etching is performed. The third metal layer 18 and the second metal layer 16 are parallel to each other to form one second capacitance C2. The third metal layer 18 and the first metal layer 14 are brought into contact with each other and conducted. A structure in which the first capacitance C1 and the second capacitance C2 are connected in parallel is configured.

  The organic light emitting diode storage capacitor structure of the present invention is obtained by adding one third metal layer 18 to the first capacitance C1 composed of the first metal layer 14 and the second metal layer 16 in the three-dimensional space, thereby adding the second metal layer 18 to the first metal layer 18. One second capacitance C2 is formed by the layer 16, and then the first metal layer 14 and the third metal layer 18 are contacted and conducted in the contact hole 19, and the second capacitance C2 and the first capacitance C1 are mutually connected. Two capacitance structures connected in parallel are formed. As a result, the planar area of the storage capacitance is reduced, and at the same time, the capacitance is retained and the driving capability of the pixel circuit is not affected.

  Although the present invention has been described in detail with reference to the drawings and embodiments, ordinary engineers in the field can make various modifications of the present invention based on the above description. Thus, certain details of the embodiments are not a limitation of the present invention. The scope of protection of the present invention shall be the scope described in the appendices.

Claims (3)

  One polycrystalline silicon layer, one first insulating layer, one first metal layer, one second insulating layer, one second metal layer, The three insulating layers are composed of one, the first metal layer and the second metal layer are parallel to each other to form one first capacitance, and the third insulating layer has one third metal layer, The third metal layer and the second metal layer are parallel to each other to form a second capacitance, and the second insulating layer and the third insulating layer are contrasted with the first metal layer and the third metal layer. A contact hole is formed at a position where the second metal layer forms an avoidance space for the contact hole, and the third metal layer and the first metal layer are contacted and transmitted through the contact hole. Forming a parallel connection of one capacitance and the second capacitance; OLED storage capacitor structure type.   The kind of claim 1, wherein an area of the avoidance space is larger than an area of the contact hole, and material deposition of the third insulating layer is filled between the avoidance space and the contact hole. Organic light-emitting diode storage capacitor structure. One polycrystalline silicon layer, one first insulating layer, one first metal layer, one second insulating layer, one second metal layer and one third insulating layer on a glass base In order, the first metal layer and the second metal layer are parallel to each other to form a first capacitance,
When producing the second metal layer, one avoidance space is formed, the third insulation layer is produced on the second metal layer, and the material of the third insulation layer is deposited on the avoidance space,
Forming a contact hole at a position where the second insulating layer and the third insulating layer contrast with the first metal layer and the avoidance space;
One third metal layer is formed on the third insulating layer, the third metal layer and the second metal layer are parallel to each other, and one second capacitance is formed. A method of manufacturing a type of organic light emitting diode storage capacitor structure in which three metal layers and the first metal layer are contacted and transmitted to form a parallel connection of the first capacitance and the second capacitance.

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