CN101770899A - Micro electro mechanical high-frequency switcher with multiple drivers - Google Patents
Micro electro mechanical high-frequency switcher with multiple drivers Download PDFInfo
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- CN101770899A CN101770899A CN200910252937A CN200910252937A CN101770899A CN 101770899 A CN101770899 A CN 101770899A CN 200910252937 A CN200910252937 A CN 200910252937A CN 200910252937 A CN200910252937 A CN 200910252937A CN 101770899 A CN101770899 A CN 101770899A
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Abstract
The invention provides a micro electro mechanical high-frequency switcher with multiple drivers, comprising a substrate, a heater arranged on the substrate, a coplanar waveguide line located on a lower metal layer, a movable film with at least two metal layers and a dielectric layer located between the coplanar waveguide line and the movable film, wherein the movable film is a cross beam both ends of which are fixed and the centre is recessed. When the heat energy generated by the heater is conducted to the movable film, or electrostatic force is generated between the movable film and the coplanar waveguide line, or both occur, the movable film is deformed in the direction of the coplanar waveguide line. The position of the movable film is moved to change the capacitance of signal lines or the conduction state of the signal lines so as to switch high-frequency signals.
Description
Technical field
The invention relates to a kind of micro electro mechanical high-frequency switcher of multiple driving.
Background technology
The standard or the frequency range that are applied at present in the wireless telecommunications have reached more than seven kinds, comprise GSM, Bluetooth, CDMA and WiMAX, each standard all has its unique characteristic, as frequency and frequency range, that is to say, the communication module complexity significantly improves, and in order to satisfy new demand, thereby uses higher frequency range.Compare with diode or transistor, have only micro electronmechanical (MEMS) assembly just can be provided at radio frequency performance preferable in the GHz application, therefore, if RF MEMS assembly can be utilized the common integration of CMOS technology and other circuit unit to become module, but reduced volume and reducing production costs then.
The RF switch has multiple application on the RF circuit, for example, by a block RF signal is switched to another block, or directly changes RF block feature by the switch-capacitor in the adjustment network (Tuning Network).The micro electronmechanical switch of the RF that designs has several characteristics, comprises low actuation voltage, low power consumption, high switch speed, low insertion loss, high isolation and reliability.
Fig. 1 is the schematic diagram of known micro electro mechanical high-frequency switcher.See also Fig. 1, Fig. 1 is a U.S. Pat 6,486, accompanying drawing in No. 425, known micro electro mechanical high-frequency switcher 30 comprises glass substrate 31, metal level 32, protuberance 33,34, fixed electrode 35,36, mobile terminal 37 and stiff end 38,39, this micro electro mechanical high-frequency switcher 30 sees through protuberance 33,34 and fixed electrode 35,36 and applies voltage and produce electrostatic force, so that mobile terminal 37 contacts with stiff end 38,39, this simple electrostatic force drives the higher driving voltage of needs.
Fig. 2 is the schematic diagram of known micro electro mechanical high-frequency switcher.See also Fig. 2, Fig. 2 is a U.S. Pat 6,927, accompanying drawing in No. 352, known micro electro mechanical high-frequency switcher 10 comprises silicon oxide layer 11, crossbeam 12, heater 13,14, complementation electrode 15,16,17,18, contiguous block 19, conductive area 20,21, space 22 and hardware 23,24, and heater 13,14 is located in the crossbeam 12.Known micro electro mechanical high-frequency switcher 10 must utilize extra processing procedure to form hardware 23,24, it forms in the below film as bimetallic, and electric current passes through heater 13,14 to open switch 10, can influence the deformation of crossbeam 12 and be easy to close conductive area 20,21 by the heat that Joule effect discharged, deformation comes from the differences in expansion between metal part and the crossbeam, and differences in expansion enough makes the central portion of crossbeam 12 connect.
Summary of the invention
The object of the present invention is to provide a kind of micro electro mechanical high-frequency switcher of multiple driving.
The present invention discloses the micro electro mechanical high-frequency switcher of a multiple driving and implements example, comprise a substrate, be located at a heater on the substrate, co-plane waveguide line, a movable film of lower floor's metal level have central authorities for the two ends fixed cross beam of depression, at the co-plane waveguide line of lower metal layer and at co-plane waveguide line and the movable dielectric layer between the film.Wherein, two metal levels with linkage unit form a three-dimensional stacked structure.The thermal energy conduction that produces when heater is to movable film, or produces electrostatic force between movable film and the co-plane waveguide line, or both are when taking place simultaneously, and movably film will bend toward co-plane waveguide line direction.
The micro electro mechanical high-frequency switcher of multiple driving of the present invention can be reached by the CMOS processing procedure, and switch is driven simultaneously by electrothermal forces (electro-thermal force) and electrostatic force, if only when electrostatic force is arranged, switching state is then locked.Thermal actuator may only need low-voltage for the electric heating actuator, and electrostatic force almost may not need energy to keep switching state, therefore, may only need provide low driving voltage, and, also has lower energy loss if will make it have actuation speed between electro and electrostatic actuator.
For the present invention can be become apparent, hereinafter enumerate embodiment especially, and cooperate appended accompanying drawing, be described in detail below.
Description of drawings
Fig. 1 is the schematic diagram of known micro electro mechanical high-frequency switcher;
Fig. 2 is the schematic diagram of another known micro electro mechanical high-frequency switcher;
Fig. 3 illustrates structure one embodiment behind the micro electro mechanical high-frequency switcher of the multiple driving that semiconductor factory is finished;
Fig. 4 is according to the micro electro mechanical high-frequency switcher of the multiple driving of the embodiment schematic diagram at channel status;
Fig. 5 is according to the micro electro mechanical high-frequency switcher of the multiple driving of the embodiment example schematic at off state;
Fig. 6 is after the micro electro mechanical high-frequency switcher of the multiple driving of foundation one embodiment removes first deformations, upper metal layers and passivation layer, shows the example vertical view of second deformations;
Fig. 7 is the schematic diagram of the co-plane waveguide line embodiment of another micro electro mechanical high-frequency switcher; And
Fig. 8 is the schematic diagram of another micro electro mechanical high-frequency switcher embodiment.
[primary clustering symbol description]
10,30 micro electro mechanical high-frequency switchers;
11 silicon oxide layers;
12 crossbeams;
13,14 heaters;
15,16,17,18 complementation electrodes;
19 contiguous blocks;
20,21 conductive area;
22 spaces;
23,24 hardwares;
31 glass substrates;
32 metal levels;
33,34 protuberances;
35,36 fixed electrodes;
37 mobile terminals;
38,39 stiff ends;
40, the micro electro mechanical high-frequency switcher of 60,70 multiple drivings;
41,71 substrates;
42,72 heaters;
43,73 upper metal layers;
431,432,731,732 first deformations;
44,74 adjacent metal;
441,741 second deformations;
442,443 ends;
444 grooves;
45,75 lower metal layer;
451,651,751 co-plane waveguide lines;
4511,6511,7511 holding wires;
4512 earth connections;
46 laminated metal layers;
47 dielectric layers;
48,68,78 movable films;
The 481-490 linkage unit;
49 thermal insulation layers;
50,80 gaps;
52 passivation layers;
53 parallel plate capacitor structures;
7513 drive electrodes;
7514 insulation films;
V
g, V
B1, V
B2Voltage;
A, B, C, D arrow.
Embodiment
Fig. 4 is according to the micro electro mechanical high-frequency switcher of the multiple driving of the embodiment schematic diagram at channel status, the switching principle of the micro electro mechanical high-frequency switcher embodiment of this multiple driving as shown in Figure 4, the micro electro mechanical high-frequency switcher of multiple driving comprises substrate 41, be located at heater 42 on the substrate 41, be positioned at the co-plane waveguide line (CPW) 451 on the lower metal layer 45 and be positioned at movable film 48 on the co-plane waveguide line (CPW) 451, movable film 48 is three-dimensional stacked structure, can be assembled by two laminated metal layers with perforation layer.4511 of holding wires are designed to path, movable film 48 forms a parallel plate capacitor structure with holding wire 4511, when start because of movable film 48 down deformation near holding wire 4511, on holding wire 4511, form a bigger electric capacity, high-frequency signal can be conducted to earth terminal via movable film 48 by this electric capacity, therefore can't pass through to the other end of holding wire 4511, that is to say, holding wire forms and opens circuit, reach the function of switching high-frequency signal, the micro electro mechanical high-frequency switcher of the multiple driving of this pattern is suitable for high frequency, and (1～10GHz) to hyperfrequency (in＞10GHz) the application.
The making flow process that realizes can be utilized CMOS (complementary metal-oxide layer-semiconductor) integrated circuit manufacture process of the standard 0.35um of 2 polysilicons (poly-Si) layer of semiconductor foundries and 4 metal levels, the example structure that foundries completes as shown in Figure 3, Fig. 3 illustrates the structure after semiconductor factory is finished the micro electro mechanical high-frequency switcher of this multiple driving, need carry out the back processing procedure again and utilize of the structure release of the mode of wet type or dry-etching movable film, if adopt the available hydrofluoric acid of mode etc. of wet etching to have preferable SiO 2 etch ability and for the slow etching solution of metal etch, final structure after finishing structure and discharging as shown in Figure 4, thin silicon dioxide layer still is positioned on the lower metal layer, to form dielectric layer.
Fig. 6 is after the micro electro mechanical high-frequency switcher of the multiple driving of foundation one embodiment removes first deformations, upper metal layers and passivation layer, shows the example vertical view of second deformations.Co-plane waveguide line 451 is made up of holding wire 4511 and two earth connections 4512, and movable film 48 is across on the co-plane waveguide line 451, and heater 42 is positioned at the outside of movable film 48 left and right sides.In addition, there are one or more grooves 444 both sides of second deformations 441, can discharge processing procedure by this groove 444 and cause residual stress on the movable film 48, to reduce the predeformation after structure discharges and to make it that preferable pliability be arranged.
Fig. 4 is that the micro electro mechanical high-frequency switcher enforcement example of the multiple driving of a realization is the section of structure of channel status when driving as yet.Fig. 5 is an example schematic that forms off state according to an embodiment during at electric heating or with static driven.The micro electro mechanical high-frequency switcher 40 of multiple driving comprises substrate 41, heater 42, lower metal layer 45, movable film 48, co-plane waveguide line 451, a plurality of linkage unit 481-490, dielectric layer 47.Heater 42 is located on the substrate 41, upper metal layers 43, adjacent metal 44, lower metal layer 45 are from top to bottom folded mutually in regular turn, movable film 48 is the three-dimensional stacked structure that at least two metal levels are formed, and in the present embodiment, movable film 48 is made up of upper metal layers 43 and adjacent metal 44.Co-plane waveguide line 451 is positioned on the lower metal layer 45, and dielectric layer 47 is on the lower metal layer 45 and be located between movable film 48 and the co-plane waveguide line 451.Has a gap 50 between adjacent metal 44 and the lower metal layer 45, again, one or more laminated metal layer 46 can be set between adjacent metal 44 and lower metal layer 45, or also can comprise a passivation layer (passivation) 52, be located on the upper metal layers 43.
Upper metal layers 43 comprises first deformations 431,432, and adjacent metal 44 comprises second deformations 441, co-plane waveguide line (Co-Planar Waveguide, CPW) 451 are positioned on the lower metal layer 45, linkage unit 481 makes heater 42 be connected with lower metal layer 45, linkage unit 482 connects lower metal layer 45 and laminated metal layer 46, linkage unit 483 connects laminated metal layer 46 and adjacent metal 44, and linkage unit 484 connects adjacent metal 44 and upper metal layers 43, linkage unit 485,486 make first deformations 431,432 are connected with second deformations 441, and the linkage unit 487-490 of opposite side connects in the same manner.
In this enforcement example, the outside of first deformations 431,432 fixing towards the gap 50 central authorities extend and be positioned at the left and right sides of second deformations 441.Dielectric layer 47 is positioned on the co-plane waveguide line 451, or is positioned at second deformations, 441 belows, and gap 50 roughly is positioned at the middle section of the micro electro mechanical high-frequency switcher 40 of whole multiple driving, mainly between second deformations 441 and dielectric layer 47.Micro electro mechanical high-frequency switcher 40 in multiple driving is under the on-state, and second deformations 441 can not contact with dielectric layer 47.In this enforcement example, heater 42 is polysilicon (poly-Si), the silicon substrate that substrate 41 has oxide layer for the top, and the main material of linkage unit 481-486 is a tungsten.
See also the enforcement example of Fig. 4,5, voltage V for disclosing
gBe earthed voltage, when applying voltage V
B2In heater 42 or apply voltage V
B1When second deformations 441, movable film 48 can be driven.As voltage V
B2When being applied on the heater 42, heater 42 can produce heat energy, and heat energy is passed through lower metal layer 45 by heater 42 by linkage unit 481-486, laminated metal layer 46, adjacent metal 44 and upper metal layers 43, from bottom to top transmit, be passed to first deformations 431 of upper metal layers 43 when heat energy, 432 o'clock, first deformations 431 is because of 50 central elongated towards the gap of being heated, and direction bending (promptly towards substrate 41 direction bendings) towards arrow B, similarly, first deformations 432 is also because of 50 central elongated towards the gap of being heated, and direction bending (towards substrate 41 direction bendings) towards arrow A, because first deformations 431,432 respectively by linkage unit 485, the end 442 of 486 and second deformations 441,443 connect, therefore, heat energy can be passed on second deformations 441 again, second deformations 441 is subjected to heating the effect and first deformations 431 of extension, 432 influences that affect, second deformations, 441 middle bodies are also towards substrate 41 direction bendings, the i.e. end 442 of second deformations 441,443 can be according to arrow D, the C bending.In other words, first deformations 431,432 is heated towards substrate 41 direction bendings, and second deformations, 441 middle bodies are subjected to affecting also towards substrate 41 direction bendings of first deformations 431,432.As voltage V
B1When being applied in second deformations 441 and voltage greater than suction voltage (pull-in voltage), can produce an electrostatic force between the holding wire 4511 of second deformations 441 and co-plane waveguide line 451, second deformations 441 is attracted each other with holding wire 4511, contact with dielectric layer 47 up to second deformations 441.When second deformations 441 contacts with dielectric layer 47, can form a parallel plate capacitor structure 53, this moment, high-frequency signal can pass through parallel plate capacitor structure 53, high-frequency signal can import the earth connection 4512 (please arrange in pairs or groups and consult Fig. 3) of co-plane waveguide line 451 both sides by parallel plate capacitor structure 53, at this moment, the micro electro mechanical high-frequency switcher 40 of multiple driving is in off state.It should be noted that movable film 48 is the fixing beam structure of central concave and two ends, the position that is provided with of second deformations 441 is low than first deformations 431,432.
The micro electro mechanical high-frequency switcher 40 of multiple driving uses electrostatic force and electric heating changes film position, and may command makes high-frequency signal whether can pass through holding wire 4511.And design the time can only use electrostatic force or only application of heat produce deformation, also can use both simultaneously and produce deformation.
Fig. 7 is the schematic diagram of the co-plane waveguide line embodiment of another micro electro mechanical high-frequency switcher.
Disclose micro electro mechanical high-frequency switcher 60 among the embodiment of Fig. 7 and comprise co-plane waveguide line 651 and movable film 68, movable film 68 is across on the co-plane waveguide line 651.Co-plane waveguide line 651 comprises holding wire 6511, and present embodiment and last embodiment do not exist together and promptly be: the holding wire 6511 of present embodiment is designed to open circuit, as shown in Figure 7, and not conducting of holding wire 6511.When micro electro mechanical high-frequency switcher 60 starts, the movable film 68 of cause is the close holding wire 6511 of deformation down, when movable film 68 with after holding wire 6511 contacts, can be path with holding wire 6511 conductings, signal can pass to the other end of holding wire 6511 by this path, that is to say, holding wire 6511 forms path, reach the function of switching high-frequency signal, the micro electro mechanical high-frequency switcher of the multiple driving of this pattern is suitable for the direct current tremendously high frequency (in the application of DC～10GHz).All the other of micro electro mechanical high-frequency switcher 60 make flowing mode and last embodiment is roughly the same, repeat no more.
Fig. 8 is the schematic diagram of another micro electro mechanical high-frequency switcher embodiment.
See also Fig. 8, micro electro mechanical high-frequency switcher 70 comprises substrate 71, heater 72, lower metal layer 75, movable film 78, co-plane waveguide line 751.Co-plane waveguide line 751 comprises holding wire 7511 and drive electrode 7513, upper metal layers 73, adjacent metal 74, lower metal layer 75 are from top to bottom folded mutually in regular turn, movable film 78 is the three-dimensional stacked structure that at least two metal levels are formed, in the present embodiment, movable film 78 is made up of upper metal layers 73 and adjacent metal 74.Co-plane waveguide line 751 is positioned on the lower metal layer 75.Has a gap 80 between adjacent metal 74 and the lower metal layer 75.
Upper metal layers 73 comprises first deformations 731,732, and adjacent metal 74 comprises second deformations 741, co-plane waveguide line 751 is positioned on the lower metal layer 75, present embodiment and Fig. 3 embodiment be obviously different be in, in the mode of electro-deposition (electrode-position) charged macromolecular material is adsorbed in deposition region after the energising on the drive electrode 7513, with formation insulation film 7514, and do not keep thin silicon dioxide layer as dielectric layer.When present embodiment can be avoided follow-up drying process, remain in the surface tension of liquid in the film gap and cause be stained with glutinous situation, avoid in the operating process influence of moisture and the problem of insulation layer fails simultaneously.
The micro electro mechanical high-frequency switcher of multiple driving can be reached by the CMOS processing procedure, and switch is driven simultaneously by electrothermal forces (electro-thermal force) and electrostatic force, if only when electrostatic force is arranged, switching state is then locked.Thermal actuator may only need low-voltage for the electric heating actuator, and electrostatic force almost may not need energy to keep switching state, therefore, may only need provide low driving voltage, and, also has lower energy loss if will make it have actuation speed between electro and electrostatic actuator.
Though the present invention discloses as above with embodiment; right its is not in order to limiting the present invention, anyly is familiar with this skill person, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the scope that claims define.
Claims (25)
1. the micro electro mechanical high-frequency switcher of a multiple driving is characterized in that, comprising:
One substrate;
One heater, this heater are located on this substrate;
One movable film comprises that two ends are fixed and the crossbeam of concavity, and at least two metal levels that wherein have linkage unit are formed a three-dimensional stacked structure;
One co-plane waveguide line is positioned at lower floor's metal level; And
One dielectric layer is located between this co-plane waveguide line and this movable film;
Wherein, when this heater produces thermal energy conduction to this movable film, or generation one electrostatic force between this movable film and this co-plane waveguide line, or the two is when producing simultaneously, past this co-plane waveguide line direction deformation of this movable film.
2. the micro electro mechanical high-frequency switcher of multiple driving according to claim 1 is characterized in that, this movable film and this co-plane waveguide line have a gap.
3. the micro electro mechanical high-frequency switcher of multiple driving according to claim 1, it is characterized in that, this movable film is made up of a upper metal layers and an adjacent metal, and this upper metal layers comprises one first deformations, and this adjacent metal comprises one second deformations, this first deformations is connected with this second deformations that these two ends are fixed and the crossbeam of concavity to form, this second deformations is low than this first deformations, and when this heater produces thermal energy conduction to this movable film, or when producing an electrostatic force or the two between this movable film and this co-plane waveguide line and producing simultaneously, this second deformations contacts with this dielectric layer.
4. the micro electro mechanical high-frequency switcher of multiple driving according to claim 3, it is characterized in that, its co-plane waveguide line comprises two earth connections, when this second deformations contacts with this dielectric layer, can form a parallel plate capacitor structure, make high-frequency signal pass through this parallel plate capacitor structure and import this earth connection.
5. the micro electro mechanical high-frequency switcher of multiple driving according to claim 3, it is characterized in that, can be after this first deformations is heated towards this orientation substrate bending, and this second deformations middle body is subjected to also affecting towards this orientation substrate bending of this first deformations, contacts with this dielectric layer.
6. the micro electro mechanical high-frequency switcher of multiple driving according to claim 3 is characterized in that, it also comprises a plurality of laminated metal layers, and these a plurality of laminated metal layers are located between this adjacent metal and this lower metal layer.
7. the micro electro mechanical high-frequency switcher of multiple driving according to claim 3 is characterized in that, it also comprises a passivation layer, and this passivation layer is located on this upper metal layers.
8. the micro electro mechanical high-frequency switcher of multiple driving according to claim 3 is characterized in that, this second deformations comprises a plurality of grooves, to discharge the residual stress on this second deformations.
9. the micro electro mechanical high-frequency switcher of multiple driving according to claim 3 is characterized in that, applies a voltage between a holding wire of this second deformations and this co-plane waveguide line, to produce this electrostatic force.
10. the micro electro mechanical high-frequency switcher of multiple driving according to claim 9 is characterized in that, the initial condition of this holding wire is path or opens circuit.
11. the micro electro mechanical high-frequency switcher of multiple driving according to claim 3 is characterized in that, it also comprises a linkage unit, connects this first deformations and this second deformations of this movable film.
12. the micro electro mechanical high-frequency switcher of multiple driving according to claim 11, it is characterized in that, first deformations is positioned at the top of second deformations and is positioned at the left and right sides of second deformations, and this second deformations comprises at least two ends, and this first deformations is connected by this linkage unit with this end respectively.
13. the micro electro mechanical high-frequency switcher of multiple driving according to claim 11 is characterized in that, the main material of this linkage unit is a tungsten.
14. the micro electro mechanical high-frequency switcher of multiple driving according to claim 1 is characterized in that, utilize apply a voltage on this heater to produce electrothermal forces.
15. the micro electro mechanical high-frequency switcher of multiple driving according to claim 1 is characterized in that, this heater is a polysilicon.
16. the micro electro mechanical high-frequency switcher of multiple driving according to claim 1 is characterized in that, this substrate is the high resistance material that the top has oxide layer.
17. the micro electro mechanical high-frequency switcher of multiple driving according to claim 1 is characterized in that, this substrate is the silicon substrate that the top has oxide layer.
18. the micro electro mechanical high-frequency switcher of multiple driving according to claim 1 is characterized in that, this dielectric layer is located on this co-plane waveguide line.
19. the micro electro mechanical high-frequency switcher of multiple driving according to claim 3 is characterized in that, this dielectric layer is located at this second deformations below.
20. the micro electro mechanical high-frequency switcher of multiple driving according to claim 1 is characterized in that, this dielectric layer is located on this lower metal layer.
21. the micro electro mechanical high-frequency switcher of multiple driving according to claim 1 is characterized in that, this dielectric layer is a mode of utilizing time control, makes an earth silicon material residual and form.
22. the micro electro mechanical high-frequency switcher of multiple driving according to claim 21 is characterized in that, this dielectric layer is after this earth silicon material is removed fully, with the mode of electro-deposition one charged macromolecular material is adsorbed to form an insulation film.
23. the micro electro mechanical high-frequency switcher of a multiple driving is characterized in that, comprising:
One substrate;
One movable film comprises that two ends are fixed and the crossbeam of concavity, and at least two metal levels that wherein have linkage unit are formed a three-dimensional stacked structure; And
One co-plane waveguide line is positioned at lower floor's metal level and comprises a holding wire and a drive electrode, wherein covers an insulating barrier on this drive electrode;
Wherein, when heat production can conduct to this movable film, or produce an electrostatic force between this movable film and this co-plane waveguide line, or the two is when producing simultaneously, this movable film is toward this co-plane waveguide line direction deformation.
24. the micro electro mechanical high-frequency switcher of multiple driving according to claim 23 is characterized in that, this movable film and this co-plane waveguide line have a gap.
25. the micro electro mechanical high-frequency switcher of multiple driving according to claim 24, it is characterized in that, this movable film is made up of a upper metal layers and an adjacent metal, and this upper metal layers comprises one first deformations, and this adjacent metal comprises one second deformations, this first deformations is connected with this second deformations that these two ends are fixed and the crossbeam of concavity to form, this second deformations is low than this first deformations, and when this heater produces thermal energy conduction to this movable film, or when producing an electrostatic force or the two between this movable film and this co-plane waveguide line and producing simultaneously, this second deformations contacts with this holding wire and makes this holding wire conducting.
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| CN200910252937A CN101770899A (en) | 2008-12-29 | 2009-12-04 | Micro electro mechanical high-frequency switcher with multiple drivers |
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| CN200810189118.8 | 2008-12-29 | ||
| CN200910252937A CN101770899A (en) | 2008-12-29 | 2009-12-04 | Micro electro mechanical high-frequency switcher with multiple drivers |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103155069A (en) * | 2010-09-21 | 2013-06-12 | 卡文迪什动力有限公司 | Pull up electrode and waffle type microstructure |
| CN104555884A (en) * | 2013-10-14 | 2015-04-29 | 原相科技股份有限公司 | Micro electro mechanical element with enhanced structural strength |
| CN105788971A (en) * | 2016-03-16 | 2016-07-20 | 上海交通大学 | Silicon substrate based compact MEMS capacitive radio-frequency switch and production method |
| CN107293449A (en) * | 2017-07-13 | 2017-10-24 | 西安电子科技大学 | Multi-channel rf micro-electromechanical switch based on variable elasticity modulus laminated film beam |
-
2009
- 2009-12-04 CN CN200910252937A patent/CN101770899A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103155069A (en) * | 2010-09-21 | 2013-06-12 | 卡文迪什动力有限公司 | Pull up electrode and waffle type microstructure |
| CN103155069B (en) * | 2010-09-21 | 2015-10-21 | 卡文迪什动力有限公司 | Pull-up electrode and waffle-type microstructure |
| CN104555884A (en) * | 2013-10-14 | 2015-04-29 | 原相科技股份有限公司 | Micro electro mechanical element with enhanced structural strength |
| CN105788971A (en) * | 2016-03-16 | 2016-07-20 | 上海交通大学 | Silicon substrate based compact MEMS capacitive radio-frequency switch and production method |
| CN107293449A (en) * | 2017-07-13 | 2017-10-24 | 西安电子科技大学 | Multi-channel rf micro-electromechanical switch based on variable elasticity modulus laminated film beam |
| CN107293449B (en) * | 2017-07-13 | 2019-06-18 | 西安电子科技大学 | Multi-channel rf micro-electromechanical switch based on variable elasticity modulus laminated film beam |
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Application publication date: 20100707 |