CN107078188B - Semiconductor light-emitting elements - Google Patents
Semiconductor light-emitting elements Download PDFInfo
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- CN107078188B CN107078188B CN201580060112.9A CN201580060112A CN107078188B CN 107078188 B CN107078188 B CN 107078188B CN 201580060112 A CN201580060112 A CN 201580060112A CN 107078188 B CN107078188 B CN 107078188B
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
Abstract
A kind of semiconductor light-emitting elements, the semiconductor light-emitting elements include the first semiconductor layer of the first conduction type；Light emitting functional layer, the light emitting functional layer are formed on first semiconductor layer and including luminescent layer；And second semiconductor layer, second semiconductor layer are formed in the light emitting functional layer and for the conduction types opposite with first semiconductor layer.The luminescent layer includes basal layer, and the basal layer has multiple base sections, and the multiple base section, which has from first semiconductor layer, receives the component of ess-strain, and is divided into random meshes；And quantum well structure layer, the quantum well structure layer include at least one quantum well layer and at least one barrier layer being formed on the basal layer.The basal layer has AlxGa1‑xN (0≤x≤1) component.At least one described barrier layer has AlyGa1‑yN (0≤y < 1) component.Component x and component y meet relationship x > y.
Description
Technical field
The present invention relates to a kind of semiconductor light-emitting elements (such as, light emitting diode (LED)).
Background technique
Semiconductor light-emitting elements on growth substrate usually by growing by n-type semiconductor layer, active layer and p-type semiconductor
The semiconductor structure layer and formation that layer is constituted apply alive n-electrode and p to n-type semiconductor layer and p-type semiconductor layer respectively
Electrode manufactures.
Patent document 1 discloses a kind of white light-emitting diode, wherein red, green and blue light emitting diode according to
This is sequentially laminated to shine in the same direction.Patent document 2 discloses a kind of white-light luminescent component, the white-light luminescent component
It include: the first illumination region, which is joined to conductive sub- installation base plate by metal layer；And second illumination region, it should
Second illumination region is formed on a region of the upper surface of the sub- installation base plate of conduction.Patent document 3 discloses a kind of half
Conductor light-emitting component, the semiconductor light-emitting elements include the multiple well layer being made of InGaN, wherein the In component of each well layer
It is different.
Citation
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2011-249460 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2006-339646 bulletin
Patent document 3: Japanese Unexamined Patent Publication 2004-179493 bulletin
Summary of the invention
Technical problem
Occur in the active layer of the element when by electrons and holes of the electrode injection into element in conjunction with (compound
(recombination)) when, the light emitting carried out by semiconductor light-emitting elements can be caused.The wavelength of the light emitted from active layer
(that is, luminescent color) is different according to the band gap for the semiconductor material for constituting the active layer.For example, partly being led using nitrite system
The light-emitting component of body emits blue light from its active layer.
For for example illuminating application, light source is needed with colour rendering.Light source with high-color rendering is that a kind of transmitting is close certainly
The light source of right light.In order to realize high-color rendering, it is preferred that the light emitted from light source is with substantially covering visible light region
The wavelength of entire wavelength.For example, being observed to white light from the light that the light source with high-color rendering extracts.
In this regard, as disclosed in above patent document, it has been proposed that extracted using semiconductor light-emitting elements
The various methods of white light.In an exemplary method of manufacture light emitting device, wavelength convert component (such as, phosphor) is mixed
Into sealing resin, to seal the element by sealing resin.For example, in the semiconductor light emitting of the active layer using transmitting blue light
In the case where element, a part of the blue light from active layer is phosphor-converted as yellow light, and by the light of both types
Hybrid concurrency is mapped to outside.Therefore, the light emitted is observed to white light as a whole.In the technology that another kind proposes, lead to
Multiple active layers that lamination has different component are crossed, so that light emitting wave-length coverage is broadened in the case where not using phosphor.
However, being had and the uniformity of the emission wavelength in the device, manufacture using the light emitting device that the above method manufactures
The related problem of the complexity and luminous intensity of process.Possible reason includes: the addition of phosphor blend step；Phosphor
Wavelength conversion efficiency changes with time；The addition of the processing step of semiconductor layer；And due to semiconductor layer processing and draw
The deterioration of the crystallinity risen.
The present invention has been carried out in view of the above problems.The object of the present invention is to provide a kind of semiconductor light-emitting elements, described half
Conductor light-emitting component does not need wavelength convert component (such as, phosphor), and has in the wide scope of visible light region
Emission wavelength band (spectral width) simultaneously has high-color rendering and high luminous intensity.
Solution to problem
According to an aspect of the present invention, semiconductor light-emitting elements include: the first semiconductor layer of the first conduction type；Hair
Light functional layer, the light emitting functional layer are formed on first semiconductor layer and including luminescent layer；And second semiconductor layer,
Second semiconductor layer is formed in the light emitting functional layer and has opposite with the conduction type of first semiconductor layer
Conduction type, wherein the luminescent layer includes: basal layer, the basal layer have from first semiconductor layer by stress
The component of strain, and there are the multiple base sections for being divided into random meshes；And quantum well structure layer (quantum
Well structure layer), which is formed on the basal layer and by least one quantum well layer
It is constituted at least one barrier layer, and the basal layer has AlxGa1-xThe component of N (0≤x≤1), at least one described gesture
Barrier layer has AlyGa1-yThe component of N (0≤y<1), and component x and component y meet the relationship of x>y.
Detailed description of the invention
(a) of Fig. 1 is the cross-sectional view for showing the structure of semiconductor light-emitting elements according to first embodiment, and is schemed
1 (b) is the schematic plan of the basal layer of luminescent layer.
(a) of Fig. 2 is the cross section for showing the structure of luminescent layer of semiconductor light-emitting elements according to first embodiment
Figure, and (b) and (c) of Fig. 2 is the cross-sectional view for showing the example component of basal layer and barrier layer.
(a) of Fig. 3 is the luminescent layer for showing the semiconductor light-emitting elements of the first modified example according to first embodiment
Structure cross-sectional view, and (b) and (c) of Fig. 3 is the cross-sectional view for showing the example component of basal layer and barrier layer.
Fig. 4 is the cross section for showing the structure of semiconductor light-emitting elements of the second modified example according to first embodiment
Figure.
Fig. 5 is the spectrum for showing the semiconductor light-emitting elements from the second modified example according to first embodiment
Figure.
Specific embodiment
Embodiments of the present invention will be discussed in more detail below now.In the present specification, identical appended drawing reference is divided
The identical composition element of dispensing.
First embodiment
(a) of Fig. 1 is to show semiconductor light-emitting elements according to first embodiment (hereinafter, in some cases
Referred to as " light-emitting component " or " element ") 10 structure cross-sectional view.In the structure of semiconductor light-emitting elements 10, semiconductor
Structure sheaf SL is formed on installation base plate (being hereinafter referred to as " substrate " in some cases) 11.The semiconductor structure layer SL
Including be formed on installation base plate 11 n-type semiconductor layer (that is, first semiconductor layer) 12, be formed in the n-type semiconductor layer 12
On light emitting functional layer 13, the electronic barrier layer 14 that is formed in the light emitting functional layer 13 and be formed in the electronic barrier layer
P-type semiconductor layer on 14 is (that is, the second semiconductor that its conduction type is opposite with the conduction type of first semiconductor layer 12
Layer) 15.
According to the embodiment, installation base plate 11 is by the growth substrate structure for such as growth of semiconductor structure layer SL
At, and be for example made of sapphire.In addition, semiconductor structure layer SL is made of nitride semiconductor.Semiconductor light emitting element
Part 10 can deposit (MOCVD) method in sapphire substrate (for example, the sapphire substrate by using Metallo-Organic Chemical Vapor
The face C surface be used as crystal growing surface) on growth semiconductor structure layer SL manufacture.Although not shown in the drawings, still shining
Element 10, which has, applies alive n-electrode and p-electrode to n-type semiconductor layer 12 and p-type semiconductor layer 15 respectively.
Embodiment is shown referring to the structure of light-emitting component 10, wherein semiconductor structure layer SL, which is formed in, is used as installation
On the growth substrate of substrate 11.However, embodiment is not limited to the structure that installation base plate 11 is growth substrate.For example, semiconductor
Light-emitting component 10 can have by growing semiconductor structure layer SL first on growth substrate, meeting semiconductor structure layer SL
It closes another substrate and removes the growth substrate and the structure that obtains.In this case, another substrate thus engaged is formed
In p-type semiconductor layer 15.Above-mentioned engagement substrate can be used with high heat dissipation degree material (such as, Si, AlN, Mo, W and
CuW)。
Although not shown in the drawings, buffer layer can still be arranged between installation base plate 11 and n-type semiconductor layer 12 (under or
Layer).For example, on the interface (interface) mitigated between growth substrate and semiconductor structure layer SL and half
The purpose of issuable strain on interface between the layer of conductor structure layer SL and buffer layer is set.Preferably
In, after GaN layer is grown on sapphire substrate (installation base plate 11) as buffer layer, it is laminated n-type semiconductor layer 12.
N-type semiconductor layer 12 is made of the GaN layer for example comprising n-type dopant (for example, Si).Electronic barrier layer 14 is by example
As AlGaN layer is constituted.P-type semiconductor layer 15 is made of the GaN layer for example comprising p-type dopant (for example, Mg).N-type semiconductor
Layer 12 may include multiple n-type semiconductor layers with different levels of doping.Electronic barrier layer 14 may include p-type dopant.p
Type semiconductor layer 15 can have contact layer in the main surface opposite with the interface relative to electronic barrier layer 14.
Light emitting functional layer 13 can have multiple luminescent layers.However, in this embodiment, light emitting functional layer 13 will be described
The case where being made of single luminescent layer.Therefore, in this embodiment, the luminescent layer 13 for being used as light emitting functional layer 13 will be carried out
Description.Luminescent layer 13 is formed in n-type semiconductor layer 12 and has Quantum Well (QW) structure.
Luminescent layer 13 has the basal layer BL of the component different from the component of n-type semiconductor layer 12.Due to partly being led from N-shaped
The stress (strain) of body layer 12, basal layer BL, which has, to be formed as the grooves (groove) of random meshes (hereinafter referred to " first is recessed
Slot ") GR1.Stated differently, since the compositional difference between n-type semiconductor layer 12 and basal layer BL, the first groove GR1 has logical
Cross the mesh shape formed by multiple combination grooves of the ess-strain creation generated in basal layer BL.It is produced in basal layer BL
Raw ess-strain is the crystal of the basal layer BL as caused by the differences between lattice constant between n-type semiconductor layer 12 and basal layer BL
The strain of structure.
Luminescent layer 13 has the quantum well structure being made of the quantum well layer WA and barrier layer BA formed on basal layer BL
Layer QWL.Quantum well layer WA is formed on basal layer BL, and barrier layer BA is formed on quantum well layer WA.Basal layer BL is used as
Barrier layer for quantum well layer WA.Quantum well layer WA is formed as strained quantum well layer.
Basal layer BL is described now with reference to (b) of Fig. 1.(b) of Fig. 1 schematically shows basal layer BL
The figure of upper surface.Basal layer BL is divided by the first groove GR1, and has many tiny bases for being formed to have random size
Bottom section BS.Because basal layer BL has the component from n-type semiconductor layer 12 by ess-strain, the base section BS
Each of be divided into random meshes.
First groove GR1 is made of the concave part with random and different length and shape.First groove GR1 is in substrate
Be formed as net (grid) shape in the whole surface of layer BL.Each of described base section BS is recessed by first in basal layer BL
The part (section) of slot GR1 random division and formation.In addition, (such as, substantially the upper surface of base section BS has various shape
Circular shape, substantially elliptical shape and polygonal shape).
First groove GR1 has such as V-arrangement cross section ((a) of Fig. 1).In addition, as shown in (b) of Fig. 1, the first groove
GR1 has threadiness bottom BP.In this embodiment, end in each of base section BS is the bottom of the first groove GR1
BP.Each of base section BS is adjacent with another base section BS at the BP of bottom.
In addition, basal layer BL has flat part corresponding with each of base section BS, (hereinafter referred to " first is flat
Portion ") FL1.The surface of basal layer BL is made of the inner wall surface of the first flat part FL1 and the first groove GR1.Described first is flat
Each of portion FL1 is divided by the first groove GR1 for each base section BS.Base section BS has by the first flat part
The upper surface that FL1 is constituted and the side surface being made of the inner wall surface of the first groove GR1.
In other words, the first flat part FL1 constitutes upper surface in each of base section BS, and the first groove GR1
Inner wall surface constitute base section BS side surface.Therefore, each of base section BS has inclined side surface, and
Cross section with for example generally trapezoidal shape.
Luminescent layer 13 on the surface thereof with the shape for being formed as inheriting (that is, keep) first groove GR1 and have with
Groove (hereinafter referred to " the second groove ") GR2 of the identical mesh shape of mesh shape of first groove GR.Specifically, as schemed
Shown in 1 (a), quantum well layer WA and barrier layer BA are formed on basal layer BL, while keeping the segment shape of base section BS.
Therefore, quantum well layer WA and barrier layer BA is at position corresponding with each concave part of the first groove GR1 of basal layer BL
With groove.The groove being formed in barrier layer BA is that the second groove GR2, the barrier layer BA is near p-type semiconductor layer
15 layer.
The part (that is, surface in addition to the second groove GR2 of barrier layer BA) on the surface of luminescent layer 13 is formed as flat
Portion (hereinafter referred to " the second flat part ") FL2.Each of second flat part FL2 is formed so that its location and shape and the
Location and shape in each of one flat part FL1 are corresponding.
In other words, luminescent layer 13 has the second flat part FL2 and the second groove GR2 on the surface thereof.Second groove GR2
It is formed so that and is divided into multiple islands to shine section ES luminescent layer 13.Each of described luminous section ES is formed
So that corresponding with each of base section BS.In other words, each of the section ES that shines is divided into so that in luminescent layer
It is random meshes on 13 surface.The size and shape of luminous section ES are random variation and distribution.
(a) of Fig. 2 is the cross-sectional view for showing the structure of luminescent layer 13.Fig. 2 includes the cross-sectional view of part amplification,
In, it is amplified by the part of (a) of Fig. 1 that dotted line surrounds.Luminescent layer 13 is carried out in more detail now with reference to (a) of Fig. 2
Description.The basal layer BL of luminescent layer 13 has AlxGa1-xThe component of N (0≤x≤1).Quantum well layer WA has the component of InGaN.
Barrier layer BA has AlyGa1-yThe component of N (0≤y < 1).
Barrier layer BA has the Al component y smaller than the Al component of basal layer BL.Specifically, the Al component y of barrier layer BA is small
In the Al component x of basal layer BL.In other words, component x and component y meets the relationship of x > y.
(b) of Fig. 2 and (c) of Fig. 2 show the example component of basal layer BL and barrier layer BA.For example, such as (b) of Fig. 2
Shown, basal layer BL has the component of AlN, and barrier layer BA has the component (that is, x=1 and 0 < y < 1) of AlGaN.This
Outside, for example, as shown in (c) of Fig. 2, basal layer BL has the component of AlN, and component of the barrier layer BA with GaN is (that is, x=
1 and y=0).
Luminescent layer 13 will be described now.In this embodiment, basal layer BL is constituted by AlN layers.Basal layer BL
Base section BS (that is, first groove GR1) can be for example by being grown in n-type semiconductor layer 12 at relatively low temperatures
AlN layer as basal layer BL is formed.
More specifically, base different from n-type semiconductor layer 12 in terms of being grown in crystal composition in n-type semiconductor layer 12
When bottom BL, stress (strain) is generated in basal layer BL.For example, basal layer BL is with more normal than the lattice of n-type semiconductor layer 12
The small lattice constant of number.For example, when forming the AlN layer for being used as basal layer BL in the GaN layer for being used as n-type semiconductor layer 12,
Elongation strain is generated in AlN layers due to GaN layer.Therefore, tensile stress is generated in AlN layers in its growth period.When
In GaN layer when growing AIN layer, form groove in AlN layers when its growth starts or in its growth period, and AlN layers with
Three dimensional constitution growth.Therefore, it is grown in a manner of three-dimensional for AlN layers, and forms multiple tiny protrusions and recess.The shape of the groove
It is the bottom BP of the first groove GR1 at starting point.
When the growing AIN layer at low temperature in GaN layer, promote AlN layers of three dimensional growth.Therefore, on AlN layers of surface
The upper a large amount of concave part (forming the first groove GR1) that formed is combined with each other simultaneously, thus by the surface segmentation of AlN floor at multiple areas
Section.Therefore the basal layer BL with multiple base section BS can be formed.In this embodiment, AlN layers in 745 DEG C of growth
At a temperature of be formed basal layer BL.
When forming the InGaN layer for being used as quantum well layer WA on basal layer BL, quantum well layer WA is formed strain
Quantum well layer.In addition, generating a certain distribution of In content in quantum well layer WA.In other words, quantum well layer WA is formed
So that the region for example in terms of the In component on the first flat part FL1 is different from the region on the first groove GR1.Base section BS
Upper surface on quantum well layer WA thickness degree it is different from the thickness degree of quantum well layer WA on the side surface of base section BS.
Therefore, band gap is not constant in the layer of quantum well layer WA.Since luminescent layer 13 has tiny island-projection and recess, institute
Emit the light of various colors with luminescent layer 13.
With base section BS size reduce, introduce quantum well layer WA In amount increase, and emission wavelength to compared with
Long wavelength side offset.Specifically, when forming the InGaN layer for being used as quantum well layer WA on the AlN layer as basal layer BL, lead to
It crosses AlN layers and compression strain is applied to InGaN layer.When InGaN layer is by compression strain, In is easy to be introduced into InGaN layer.Cause
This can form the InGaN layer with high In ingredient by forming InGaN layer on the basal layer BL with high Al contents.
It reduce the band gap of InGaN layer (that is, energy between quantum level).Quantum well layer WA transmitting has longer
The light of emission wavelength on wavelength side.In this embodiment, luminescent layer 13 emits its intensity peak relative to blue region
The light in region in longer wavelength side.
In addition, in this embodiment, the Al component y of barrier layer BA is less than the Al component x of basal layer BL.Therefore, potential barrier
Layer BA has the band gap smaller than the band gap of basal layer BL, this leads to the increase of the probability of recombination of electrons and holes.
More specifically, injecting electronics from n-type semiconductor layer 12, and inject from p-type semiconductor layer 15 for luminescent layer 13
Hole.In addition, the mobility (mobility) of electronics is higher than the mobility in hole.As discussed previously with respect to luminescent layer 13, p-type
Band gap of the band gap of layer on 15 side (that is, barrier layer BA) of semiconductor layer than the layer of 12 side (that is, basal layer BL) of n-type semiconductor layer
It is small.Therefore, the difference in terms of the efficiency of transmission between electronics and hole reduces, so that the probability of recombination between the two increases.
Preferably, basal layer BL helps to create the thickness degree of the tunnel-effect of carrier.For example, carrier
Tunnel-effect is caused by the thickness degree of reduction basal layer BL.Substrate with the big band gap of the band gap than n-type semiconductor layer 12
Layer BL inhibits electron-transport to quantum well layer WA.By adjusting basal layer BL thickness degree and generate tunnel-effect, promote
The transmission of the sub- well layer WA of electron vectors, and increase with the probability of recombination in hole (that is, luminous efficiency).
Therefore, the light emitted from luminescent layer 13 has wide emission wavelength range and high luminous intensity.Luminescent layer 13 is made into
With high-color rendering, and emit the light with high luminous intensity.
In this embodiment, the base section BS of basal layer BL has the first flat part FL1.The surface of luminescent layer 13 has
There is the first flat part FL2.Entire luminescent layer 13 ensures preferred crystallinity level.
In this embodiment, show what the surface of basal layer BL was made of the first flat part FL1 and the first groove GR1
Situation.However, surface structure is not limited to above situation.For example, basal layer BL can have on the upper surface of base section BS
There is curved surface portion.
In addition, the present inventor, which has checked, not to be the formation of luminescent layer as luminescent layer 13 but has multiple Quantum Well
The formation of the multi-quantum pit structure of layer, the quantum well layer have a flat surfaces, and in the quantum well layer, In group
Divide and changes differently from one another.However, it is possible to which the range of the In component formed is limited.There is the In component comprising variation
In the case where the light-emitting component of the luminescent layer of multi-quantum pit structure, there is the wavelength band one with the light-emitting component 10 of the embodiment
The spectrum of the wide wavelength band of sample is impossible.Specifically, can not obtain has constant wavelength and some strength in a wide range
Horizontal light.
Therefore, by simply increasing In component, the light with high-color rendering can not be obtained.There is excessive In group when being formed
Point quantum well layer to change In group timesharing in a wide range, significantly, and In is precipitated and becomes for the segregation (segregation) of In
It is black.In addition, forming the part for not playing the role of luminescent layer.It can thus be stated that being based on In component, while realizing wider shine
There is limitation in the effort of spectrum and higher luminous intensity.
In the inspection of another example, the present inventor is made from a different material by lamination and the hair with different band gap
Photosphere manufactures light-emitting component.Simply being laminated different types of material, only to generate its peak wavelength corresponding with band gap to generate
The luminescent layer of light, then the spectral intensity between peak value is small.Since color is mixed in uneven and unstable mode, so
White light is obtained to be difficult.The step of addition formation includes the luminescent layer of different types of material, and obtained product is not
With preferred crystallinity level.In this embodiment, on the other hand, there is microstructural quantum well layer WA by being formed
Light emitting functional layer 13, be easy and must realize the emission wavelength band (half breadth) in the wide scope of visible light region
Light.
Embodiment as an example, the present inventor, which forms, to be had with the luminescent layer 13 of lower thickness.Basal layer BL
Layer with a thickness of 4nm, and the layer of quantum well layer WA is with a thickness of 3nm.When barrier layer BA is made of GaN layer, the thickness of GaN layer
Degree is 7nm.When barrier layer BA is made of AlGaN layer, the layer of AlGaN layer is with a thickness of 4nm.Base section BS is on inner face direction
Size change in the range of from tens nm to several μm.
As Al component y increases, spectrum peak obtained is deviated to long wavelength side.This means that can be by with various
Mode adjusts Al component y to adjust luminescent color.To this, there are two possible reasons.Firstly, generated in quantum well layer WA
Ess-strain increases with the increase of Al component y.The internal electric field of quantum well layer WA is with generating in quantum well layer WA
The increase of ess-strain and increase.Therefore, the band inclination of quantum well layer WA, and actual band gap reduces.Second the reason is that
The difference of the diffusion levels of In to barrier layer BA.As the Al component y of barrier layer BA reduces, In is from quantum well layer WA to barrier layer
The easness of the diffusion of BA increases.Therefore, the practical In content in quantum well layer WA is reduced.
In this embodiment, it has been described that the case where being formed with a quantum well layer WA and barrier layer BA.So
And the quantity of quantum well layer WA and the quantity of barrier layer BA are not limited to above situation.For example, multiple quantum well layer WA can be formed
With multiple barrier layer BA.In other words, quantum well structure layer QWL needs to have at least one quantum well layer WA and at least one gesture
Barrier layer BA.More specifically, on basal layer BL, luminescent layer 13 is needed with alternatively laminated at least one quantum well layer WA and at least
The structure of one barrier layer BA.
[the first modified example]
(a) of Fig. 3 is the structure for showing the semiconductor light-emitting elements 30 of the first modified example according to first embodiment
Cross-sectional view.Other than the structure of light emitting functional layer (luminescent layer) 33, construction and the light-emitting component 10 of light-emitting component 30
It constructs identical.In the structure of luminescent layer 33, on basal layer BL, alternatively laminated multiple quantum well layer WA1 and WA2 (are repaired at this
Change is two in example) and multiple barrier layer BA1 and BA2 (being two in the modified example).In other words, luminescent layer 33 has
There is the quantum well structure layer QWL of multiple quantum wells (MQW) structure.In the modified example, quantum well layer WA1 and WA2 have identical
Component, for example, InGaN component.
In the modified example, barrier layer BA1 and BA2 are constructed such that Al component with to p-type semiconductor layer 15
Distance reduces and reduces.More specifically, barrier layer BA1 has AlyGa1-yThe component of N (0≤y < 1), and barrier layer BA2 has
AlzGa1-zThe component of N (0≤z≤1).Component y and component z meets relationship y > z, and the Al component x of basal layer BL meets relationship
x>y>z。
The example component of basal layer BL and barrier layer BA1 and BA2 are shown in (b) and (c) of Fig. 3.For example, as schemed
Shown in 3 (b), basal layer BL is AlN layers, and barrier layer BA1 is AlGaN layer.In addition, barrier layer BA2 is that its Al component z is small
In the AlGaN layer of the Al component (that is, x=1,0<y<1, and 0<z<1, y>z) of barrier layer BA1.For example, as shown in (c) of Fig. 3,
Basal layer BL be AlN layer, barrier layer BA1 be AlGaN layer, and barrier layer BA2 for GaN layer (specifically, x=1,0 < y < 1, with
And z=0).In the modified example, the layer of barrier layer BA1 and BA2 are with a thickness of 4nm.
Barrier layer BA1 and BA2 need to be constructed such that Al component subtracts as the distance to p-type semiconductor layer 15 reduces
It is few.It may include multiple barrier layers with identical Al component, wherein for example, the relationship of x=y > z or x > y=z is in component x, y
It is set up in z.
In the modified example, basal layer BL and barrier layer BA1 and BA2 are formed so that Al component from N-shaped half
It is gradually reduced in conductor layer 12 to the direction of p-type semiconductor layer 15.Due to such structural basement layer BL and barrier layer BA1 and
BA2, it is possible to the efficiency that hole is injected to luminescent layer 33 is adjusted with high-freedom degree.
By reducing Al component towards p-type semiconductor layer 15, the tone of transmitting light can be easily designed.The reason is that quantum
Well layer WA1 and WA2 from the barrier layer on the upper side and lower side by ess-strain, and the horizontal barrier layer that influences of ess-strain
Each of Al component.For example, when each layer has different Al group timesharing, quantum well layer is formed so that lower barrierlayer exists
It is greater than upper barrier layer in terms of Al component, and under another quantum well layer is formed so that barrier layer is greater than in terms of the Al component
Barrier layer.In this case, the size for the total stress strain being applied on each quantum well layer can not be determined, this causes to shine
The difficulty of Wavelength design.In contrast, such as in the case where the modified example, by increasing Al group towards p-type semiconductor layer 15
Point, the wavelength of the light emitted from each quantum well layer of multiple quantum wells to p-type semiconductor layer 15 can be shortened.It therefore, can be with
Realize the structure simply and readily designed.In addition, multi-quantum pit structure further improves luminous efficiency.Therefore, it realizes simultaneously
High-color rendering and high luminous intensity.
[the second modified example]
Fig. 4 be show the semiconductor light-emitting elements 50 of the second modified example according to first embodiment structure it is transversal
Face figure.Other than the structure of light emitting functional layer 53, the construction of light-emitting component 50 is identical as the construction of light-emitting component 10.It is shining
Between the n-type semiconductor layer 12 and luminescent layer (the first luminescent layer) 13 of element 10, light emitting functional layer 53 has luminescent layer (the second hair
Photosphere) 53A, alternatively laminated at least one quantum well layer WB and multiple barrier layer BB in the luminescent layer 53A.
According to the modified example, there is luminescent layer 53A the quantum well layer WB of uniform flat to be maintained at n-type semiconductor layer 12
On two barrier layer BB between structure.On the barrier layer BB near p-type semiconductor layer 15,13 (base of luminescent layer is formed
Bottom BL).Quantum well layer WB has InGaN component for example identical with the InGaN component of such as quantum well layer WA.Barrier layer BB
Each of there is the identical component of component (for example, GaN component) with n-type semiconductor layer 12.
According to the modified example, the luminescent layer 53A of quantum well structure is added to luminous member according to first embodiment
The side of the n-type semiconductor layer 12 of luminescent layer 13 in part 10.Compared with first embodiment, can easily emit has
The additional optical of emission wavelength peak value in pure blue region.It is conducive to for example increase blue region according to being configured with for the embodiment
In luminous intensity.
Fig. 5 is shown when potential barrier BA is formed by GaN layer and when potential barrier BA is formed by AlN layers from semiconductor light emitting element
The curve of spectrum of light emitting functional layer 53 in part 50.The construction that barrier layer BA is constituted by AlN layers is equal to wherein component x and y and expires
The construction of sufficient x=y=1.Curve C1 indicates the curve of spectrum when barrier layer BA is formed by GaN layer.Potential barrier is worked as in curve C2 expression
Curve of spectrum when layer BA is formed by AlN layers.
From it is shown in fig. 5 those can be seen that with barrier layer BA Al component increase, the spectral intensity of light obtained
Peak value to long wavelength side deviate.The peak wavelength of two curves is deviated from blue region, and emission wavelength band is wider.About
Peak value PK at 420nm is caused by the light emitted from luminescent layer 53A.The position of peak value PK is identical in two curves.In curve
In C1, the position of the peak value in long wavelength region is far from the position of the peak value PK in blue region.The two peak values in curve C2
Relative close.Based on above-mentioned confirmation, the color of the color of emitted light can be adjusted by adjusting the Al component of barrier layer BA
It adjusts.
It describes in this embodiment and forms electronics between light emitting functional layer 13,33 and 53 and p-type semiconductor layer 15
The case where barrier layer 14.However, the embodiment is not limited to the case where providing electronic barrier layer 14.For example, can be in luminous function
P-type semiconductor layer 15 is formed on ergosphere 13.In addition, the band gap of electronic barrier layer 14 is than n-type semiconductor layer 12 and p-type semiconductor layer
15 band gap is big.Accordingly it is possible to prevent electronics spills into 15 side of p-type semiconductor layer by light emitting functional layer 13.It is therefore preferable that setting
Electronic barrier layer 14 is set for large driven current density and high-temperature operation.
First embodiment and the first modified example and the second modified example can be combined with each other.For example, luminescent layer 53A
The lower section of light emitting functional layer 33 can be formed in.Furthermore it is possible to be laminated luminescent layer 13 and 33.
In embodiment and its modified example, light emitting functional layer 13 has basal layer BL and is formed on basal layer BL
Quantum well structure layer QWL, in which: basal layer BL have by the component of ess-strain and have from n-type semiconductor layer 12
It is divided into multiple base section BS of random meshes；And quantum well structure layer QWL is by least one quantum well layer WA and extremely
A few barrier layer WB is constituted.In addition, there is luminescent layer 13 second groove GR2, the second groove GR2 to divide the luminescent layer 13
It is cut into the luminous section ES of multiple islands, the luminous section ES of the multiple island is formed as random meshes.
Basal layer BL has AlxGa1-xThe component of N (0≤x≤1).At least one barrier layer BA has AlyGa1-yN(0≤y<
1) component, and component x and component y meet the inequality of x > y.It is, therefore, possible to provide can emit has in visible wavelength
The light-emitting component of the light of high luminous intensity in the wide scope in region.
In this embodiment, describe that the first conduction type is n conduction type and the second conduction type is p conductive-type
The case where type, the p conduction type are opposite with the n conduction type.However, the first conduction type can be p-type, and second
Conduction type can be N-shaped.
Symbol description
10,30,50 semiconductor light-emitting elements
12 n-type semiconductor layers (the first semiconductor layer)
13,33,53 light emitting functional layer (luminescent layer)
53A luminescent layer
14 electronic barrier layers
15 p-type semiconductor layers (the second semiconductor layer)
BL basal layer
WA, WA1, WA2 quantum well layer
BA, BA1, BA2 barrier layer
The first groove of GR1, GR2 and the second groove
Claims (6)
1. a kind of semiconductor light-emitting elements, the semiconductor light-emitting elements include:
First semiconductor layer, first semiconductor layer have the first conduction type；
Light emitting functional layer, the light emitting functional layer are formed on first semiconductor layer and including luminescent layer；And
Second semiconductor layer, second semiconductor layer are formed in the light emitting functional layer and have and lead with described the first half
The opposite conduction type of the conduction type of body layer, wherein
The luminescent layer includes: basal layer, and the basal layer has the component from first semiconductor layer by ess-strain,
And there are multiple base sections that random meshes are divided by multiple combination grooves, the multiple base section has random ruler
It is very little；And quantum well structure layer, the quantum well structure layer are formed on the basal layer and by least one quantum well layer
It is constituted at least one barrier layer, and
The basal layer has AlxGa1-xThe component of N (0≤x≤1), at least one described barrier layer have AlyGa1-yN(0≤y<
1) component, and component x and component y meet the relationship of x > y.
2. semiconductor light-emitting elements according to claim 1, wherein first semiconductor layer has the component of GaN, and
And at least one described quantum well layer has the component of InGaN.
3. semiconductor light-emitting elements according to claim 1, wherein
The quantum well structure layer has multi-quantum pit structure, and
Each barrier layer of the multi-quantum pit structure be formed so that Al component with to second semiconductor layer away from
It is reduced from reduction.
4. semiconductor light-emitting elements according to claim 1, wherein the basal layer, which has, causes the tunnel of carrier to be imitated
The thickness degree answered.
5. semiconductor light-emitting elements according to claim 1, wherein the basal layer have AlN component, and it is described extremely
The barrier layer near second semiconductor layer in a few barrier layer has GaN component.
6. semiconductor light-emitting elements according to claim 1, wherein
Between first semiconductor layer and the luminescent layer, the light emitting functional layer have by least one quantum well layer and
The luminescent layer that multiple barrier layers are constituted.
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| JP2014226940A JP6433248B2 (en) | 2014-11-07 | 2014-11-07 | Semiconductor light emitting device |
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| PCT/JP2015/079808 WO2016072278A1 (en) | 2014-11-07 | 2015-10-22 | Semiconductor light-emitting element |
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| KR102569461B1 (en) * | 2015-11-30 | 2023-09-04 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | Light emitting device and lighting apparatus including the same |
| US10541514B2 (en) * | 2016-02-25 | 2020-01-21 | Ngk Insulators, Ltd. | Surface-emitting device, vertical external-cavity surface-emitting laser, and method for manufacturing surface-emitting device |
| JP2017220586A (en) * | 2016-06-08 | 2017-12-14 | 国立大学法人 東京大学 | Semiconductor light-emitting device |
| CN113964246A (en) * | 2021-09-28 | 2022-01-21 | 厦门士兰明镓化合物半导体有限公司 | Epitaxial structure of light emitting diode and manufacturing method thereof |
| CN114038954A (en) * | 2021-09-28 | 2022-02-11 | 厦门士兰明镓化合物半导体有限公司 | Epitaxial structure of light emitting diode and manufacturing method thereof |
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