CN107074617A - Semiconductor element glass for covering - Google Patents
Semiconductor element glass for covering Download PDFInfo
- Publication number
- CN107074617A CN107074617A CN201580048466.1A CN201580048466A CN107074617A CN 107074617 A CN107074617 A CN 107074617A CN 201580048466 A CN201580048466 A CN 201580048466A CN 107074617 A CN107074617 A CN 107074617A
- Authority
- CN
- China
- Prior art keywords
- semiconductor element
- glass
- covering
- powder
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
- C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/20—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing titanium compounds; containing zirconium compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The present invention provides a kind of burden caused to environment small and big surface charge density semiconductor element glass for covering.The present invention semiconductor element glass for covering be characterised by, in terms of quality %, containing ZnO 50~62% (wherein, not including 62%), B2O319~28%, SiO28%) and Al 8~15% (wherein, not including2O33~12%, and contain substantially no alkali metal component, lead composition, Bi2O3、Sb2O3And As2O3。
Description
Technical field
The present invention relates to a kind of glass for being used to coat the semiconductor element comprising P-N junction.
Background technology
Typically, for semiconductor elements such as silicon diode, transistors, from the pollution for preventing from being caused by extraneous air
Viewpoint considers that the surface comprising P-N junction portion of semiconductor element is by glass fluxing technique.Thus, it is possible to realize semiconductor component surfaces
Stabilisation, and the deterioration of rejection.
As the characteristic required for semiconductor element glass for covering, it can enumerate：(1) in order to avoid cladding when because with
The coefficient of thermal expansion differences of semiconductor element and crack, make the thermal coefficient of expansion of thermal coefficient of expansion and semiconductor element
Match somebody with somebody；(2) in order to prevent the deterioration in characteristics of semiconductor element, it can be coated under lower temperature (such as less than 900 DEG C)；
(3) impurity such as the alkali metal component that is had undesirable effect to the characteristic of semiconductor element are not contained；(4) as cladding semiconductor element
Electrical characteristic behind part surface, with the high reliability etc. such as reverse high pressure, leakage current be few.
In the prior art, as semiconductor element glass for covering, it is known to ZnO-B2O3-SiO2The zinc system glass such as system,
PbO-SiO2-Al2O3System or PbO-SiO2-Al2O3-B2O3The lead system glass such as system, from the viewpoint of operability, PbO-SiO2-
Al2O3System and PbO-SiO2-Al2O3-B2O3The lead system glass such as system become main flow (referring for example to patent document 1~4).
Prior art literature
Patent document
Patent document 1：Japanese Patent Publication 1-49653 publications
Patent document 2：Japanese Unexamined Patent Application 50-129181 publications
Patent document 3：Japanese Unexamined Patent Application 48-43275 publications
Patent document 4：Japanese Unexamined Patent Publication 2008-162881 publications
The content of the invention
The technical problem to be solved is intended in invention
Because the lead compositions such as PbO are the big compositions of environmental pressure, therefore, in recent years, making in electric and electronic equipment
With being gradually restricted, the unleaded of various materials promotes.In above-mentioned ZnO-B2O3-SiO2In the zinc system glass such as system,
Containing a small amount of lead composition, thus from the aspect of environment, there is also use situation about being restricted.
On the other hand, it is main flow not contain the low glass of surface charge density in the glass of lead composition, it is difficult in reply~
The semiconductor element of high withstand voltage.Be used as the semiconductor element covering material with high-density surface charge, it was also proposed that cross by containing
There is Bi2O3The material that is made of glass, however, Bi2O3Also it is identical with lead, it is possible to burden is caused to environment.
In view of the above circumstances, it is an object of the present invention to provide a kind of burden caused to environment is small and surface charge
The big semiconductor element glass for covering of density.
Technological means for solving problem
The present inventor has made intensive studies, and as a result finds, utilizes the ZnO-B constituted with characteristic2O3-SiO2
It is that glass can solve the above problems, and is used as present invention proposition.
That is, semiconductor element glass for covering of the invention is characterised by, in terms of quality %, contains ZnO 50~62%
(wherein, not including 62%), B2O319~28%, SiO28%) and Al 8~15% (wherein, not including2O33~12%, and
Contain substantially no alkali metal component, lead composition, Bi2O3、Sb2O3And As2O3。
It should be noted that in the present invention, so-called " containing substantially no " refers to, will not be intentional as glass ingredient
Ground is added, and is not meant to that the impurity being inevitably mixed into also is excluded completely.For objective, refer to including impurity
The content of the composition is in terms of quality %, less than 0.1%.
The semiconductor element glass for covering of the present invention preferably also contains MnO in terms of quality %20~5%, Nb2O50~
5% and CeO20~3%.
The semiconductor element glass for covering powder of the present invention is characterised by, is coated and is used comprising above-mentioned semiconductor element
Glass.
The semiconductor element cladding material of the present invention is characterised by, contains above-mentioned semiconductor element glass for covering
Mass parts of powder 100 and selected from TiO2、ZrO2、ZnO、αZnO·B2O3、2ZnO·SiO2, in cordierite and quartz at least 1
Plant the mass parts of inorganic powder 0.01~5.
Particularly in the case where the contact area of the semiconductor elements such as Si and glass for covering is very big, in order to suppress to split
The generation of line etc., it is generally desirable to, the thermal coefficient of expansion of semiconductor element and glass for covering is approached.The thermal expansion of glass for covering
Coefficient can be adjusted by crystalline component contained in glass, however, it is very tired for rightly controlling to separate out crystal amount
Difficult.Thus, if suitably adding above-mentioned inorganic powder relative to semiconductor element glass for covering powder, due to this
A little inorganic powders play a part of nucleator, therefore, it is possible to relatively easily control to separate out crystal amount.As a result, can be easy
Realize desired thermal coefficient of expansion in ground.
Embodiment
The semiconductor element glass for covering of the present invention is characterised by, in terms of quality %, is contained：ZnO 50~62%
(wherein, not including 62%), B2O319~28%, SiO28~15% (wherein, not including 8%), Al2O33~12%, and it is real
Alkali metal component, lead composition, Bi are not contained in matter2O3、Sb2O3And As2O3.Hereinafter, the semiconductor element in the present invention is coated
The reasons why with the content for providing each composition in glass as described above, illustrates.It should be noted that following on each
In the explanation of the content of composition, as long as no particularly pointing out, " % " just refers to " quality % ".
ZnO is to make the composition of stabilization.ZnO content be ZnO 50~62% (wherein, not including 62%), preferably
For 55~61%.If ZnO content is very few, it is difficult to obtain the effect above.In addition, thermal coefficient of expansion easily becomes big, it is tied
Fruit is that the thermal expansion difference of glass and semiconductor element becomes big, it is possible to crack in glass.On the other hand, if ZnO
Content is excessive, then the heat treatment when cladding crystallization can be made hastily to promote, accordingly, there exist cause because of illiquidity
It is difficult to the tendency for coating semiconductor component surfaces.
B2O3It is network forming component, with the effect for improving mobility.B2O3Content be 19~28%, preferably 20
~25%.If B2O3Content it is very few, then crystallinity becomes strong, is damaged mobility, exists and is difficult to coat semiconductor component surfaces
Tendency.On the other hand, if B2O3Content it is excessive, then thermal coefficient of expansion easily becomes big.As a result, glass and semiconductor
The thermal expansion difference of element becomes big, it is possible to crack in glass.
SiO2It is network forming component, with the acid proof effect of raising.SiO2Content (wherein, do not wrap for 8~15%
Include 8%), preferably 9~14%.If SiO2Content it is very few, then chemical durability is easily reduced.In addition, thermal coefficient of expansion
Easily become big, as a result, the thermal expansion difference of glass and semiconductor element becomes big, it is possible to crack in glass.If
SiO2Content it is excessive, then uniformity is easily reduced.
Al2O3It is the composition for improving surface charge density.Al2O3Content be 3~12%, preferably 5~10%, it is more excellent
Elect 5.5~9.5% as.If Al2O3Content it is very few, then be difficult to obtain the effect.On the other hand, if Al2O3Content
Excessively, then easy devitrification.
Alkali metal component (Li2O、Na2O and K2O etc.) there is the tendency being had undesirable effect to the characteristic of semiconductor element.
Thus, semiconductor element glass for covering of the invention contains substantially no alkali metal component.In addition, being caused from mitigating to environment
Burden from the viewpoint of, semiconductor element glass for covering of the invention contains substantially no lead composition, Sb2O3And As2O3。
In addition, as it was previously stated, Bi2O3Also it is possible to make environment cumbrous composition, therefore, semiconductor element cladding of the invention
Bi is contained substantially no with glass2O3.If it should be noted that containing Bi2O3, then surface charge can easily be increased close
Degree, therefore, easily improves pressure-resistant, however, having the tendency that leakage current also becomes big simultaneously.Thus, from the viewpoint for reducing leakage current
Consider, contain substantially no Bi2O3Way be effective.
The present invention semiconductor element glass for covering beyond mentioned component, MnO can also be contained2、Nb2O5Or CeO2。
These compositions, which have, makes the effect that the leakage current of semiconductor element is reduced.
MnO2Content be preferably 0~5%, more preferably 0.1~3%.If MnO2Content it is excessive, then have melting
Property reduction tendency.
Nb2O5Content be preferably 0~5%, more preferably 0.1~3%.If Nb2O5Content it is excessive, then have molten
The tendency of melting property reduction.
CeO2Content be preferably 0~3%, more preferably 0.1~2%.If CeO2Excessively, then crystallinity is too strong, has
The tendency of mobility reduction.
From the viewpoint of the cladding that can easily carry out semiconductor component surfaces, semiconductor element cladding of the invention
It is preferably powdered (semiconductor element glass for covering powder) with glass.In this case, the average grain diameter D of glass powder50
Preferably less than 25 μm, more preferably less than 15 μm.If the average grain diameter D of glass powder50Excessive, then having becomes gelatinization
Difficulty makes electro coat become difficult tendency.It should be noted that the average grain diameter D of glass powder50Lower limit without spy
Do not limit, however, being more than 0.1 μm in reality.
The present invention semiconductor element glass for covering can by the way that the material powders such as oxide are mixed into batch,
And melt postforming in about 1 hour at 1400 DEG C or so and obtain.In addition, by further being crushed to the glass after shaping and
Classification, so as to obtain semiconductor element glass for covering powder.
The semiconductor element cladding of the present invention is relative to above-mentioned semiconductor element glass for covering powder with material, contained
Have and be selected from TiO as nucleator2、ZrO2、ZnO、αZnO·B2O3、2ZnO·SiO2, at least one kind of nothing in cordierite and quartz
Machine powder.The content of inorganic powder, preferably with respect to 100 mass parts semiconductor element glass for covering powder, is 0.01
~5 mass parts, more preferably 0.1~3 mass parts.If the content of inorganic powder is very few, crystal quantitative change is separated out few, it is difficult to real
Existing desired thermal coefficient of expansion.If the content of inorganic powder is excessive, separates out crystal amount excessively, be damaged mobility, meeting
There is to make the cladding of semiconductor component surfaces to become difficult.
It should be noted that the particle diameter of inorganic powder is smaller, then the particle diameter for separating out crystal is smaller, the structure of cladding material
It is closeer, therefore, have the tendency that mechanical strength becomes big.Thus, the average grain diameter D of inorganic powder50It is preferably less than 5 μm, more excellent
Elect less than 3 μm as.It should be noted that the average grain diameter D of inorganic powder50Lower limit be not particularly limited, however, in reality
For more than 0.1 μm.
The semiconductor element glass for covering of the present invention and the surface charge density of semiconductor element cladding material are preferred
Semiconductor device relative to voltage 1000V is 4 × 1011/cm2More than, semiconductor device relative to more than 1500V for 9 ×
1011/cm2More than.If pressure-resistant to uprise it should be noted that surface charge density becomes big, however, having leakage current simultaneously
Also big tendency is become.Thus, in the case of the semiconductor element applied to 1000~1500V or so, in order to suppress leakage current,
Obtain and be for example adjusted to 12 × 10 with pressure-resistant balance, preferably surface charge density11/cm2Hereinafter, more preferably it is adjusted to 10 ×
1011/cm2Below.
The present invention semiconductor element glass for covering and semiconductor element cladding material thermal coefficient of expansion (30~
300 DEG C) can be according to the thermal coefficient of expansion of semiconductor element, such as 20~60 × 10-7/ DEG C, more preferably 30~50 × 10-7/ DEG C in the range of suitably adjust.
Embodiment
Hereinafter, according to embodiment, the present invention will be described, however, the present invention is not limited to these embodiments.
Table 1 represents embodiments of the invention and comparative example.
[table 1]
Each sample is made as shown below.First, mixed material powder, system in the way of the glass composition in as table 1
Make batch, and melted 1 hour at 1400 DEG C.Molten glass into it is membranaceous after, crushed, used using ball mill
The sieve of 350 mesh, is classified, and obtains semiconductor element glass for covering powder (average grain diameter D50：12μm).
To the semiconductor element glass for covering powder of gained, thermal coefficient of expansion and surface charge density are determined.Need
It is bright, in embodiment 6, to the addition of 0.1 mass parts relative to the mass parts of semiconductor element glass for covering powder 100
The sample of ZnO powder is determined.Show the result in table 1.
Thermal coefficient of expansion is to be determined using dilatometer within the temperature range of 30~300 DEG C.
Surface charge density is determined as shown below.First, glass powder is scattered in organic solvent, made using electrophoresis
Silicon plate surface is attached in the way of reaching certain thickness, then, burnt till, formed glassy layer.On glassy layer
Formed after aluminium electrode, the change of the capacitance in glass is determined using C-V testers, surface charge density is calculated.
It can be seen from table 1, the surface charge density of the sample of embodiment 1~5 is up to 5 × 1011/cm2More than.This is with showing
Some PbO-SiO2-Al2O3System or PbO-SiO2-Al2O3-B2O3The equal surface charge densities of lead system glass such as system.Thus, it is real
Apply example 1~6 semiconductor element glass for covering (semiconductor element cladding with material) be suitable in~high withstand voltage partly leads
The cladding of volume elements part.
On the other hand understand, the surface charge density as little as 1 × 10 of the sample of comparative example 111/cm2, in being unsuitable for~high resistance to
The cladding of the semiconductor element of pressure.
Claims (4)
1. a kind of semiconductor element glass for covering, it is characterised in that
In terms of quality %, the semiconductor element glass for covering contains：ZnO 50~62% (wherein, not including 62%), B2O3
19~28%, SiO28%) and Al 8~15% (wherein, not including2O33~12%, and contain substantially no alkali metal component,
Lead composition, Bi2O3、Sb2O3And As2O3。
2. semiconductor element glass for covering according to claim 1, it is characterised in that
In terms of quality %, the semiconductor element glass for covering also contains MnO20~5%, Nb2O50~5% and CeO20~
3%.
3. a kind of semiconductor element glass for covering powder, it includes the semiconductor element cladding glass described in claim 1 or 2
Glass.
4. a kind of semiconductor element cladding material, it is characterised in that
The semiconductor element cladding material contains：
The mass parts of semiconductor element glass for covering powder 100 described in claim 3；And
Selected from TiO2、ZrO2、ZnO、αZnO·B2O3、2ZnO·SiO2, at least one kind of inorganic powder 0.01 in cordierite and quartz
~5 mass parts.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-182838 | 2014-09-09 | ||
| JP2014182838A JP6410089B2 (en) | 2014-09-09 | 2014-09-09 | Glass for semiconductor element coating |
| PCT/JP2015/073312 WO2016039101A1 (en) | 2014-09-09 | 2015-08-20 | Semiconductor element-coating glass |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107074617A true CN107074617A (en) | 2017-08-18 |
Family
ID=55458857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580048466.1A Pending CN107074617A (en) | 2014-09-09 | 2015-08-20 | Semiconductor element glass for covering |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6410089B2 (en) |
| CN (1) | CN107074617A (en) |
| TW (1) | TWI657543B (en) |
| WO (1) | WO2016039101A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110642519A (en) * | 2019-09-25 | 2020-01-03 | 湖南利德电子浆料股份有限公司 | Encapsulation slurry for aluminum nitride substrate and preparation method and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54119513A (en) * | 1978-03-10 | 1979-09-17 | Asahi Glass Co Ltd | Glass for coating semiconductor |
| CN101250026A (en) * | 2006-12-27 | 2008-08-27 | 史考特公司 | Method for producing an electronic component passivated by lead free glass |
| CN102741185A (en) * | 2010-01-28 | 2012-10-17 | 日本电气硝子株式会社 | Glass for semiconductor coating and material for semiconductor coating using the same |
| CN103748049A (en) * | 2011-08-25 | 2014-04-23 | 日本电气硝子株式会社 | Glass for covering semiconductor element |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0764582B2 (en) * | 1989-05-26 | 1995-07-12 | 日本電気硝子株式会社 | Binder glass for ceramic capacitors |
-
2014
- 2014-09-09 JP JP2014182838A patent/JP6410089B2/en active Active
-
2015
- 2015-08-20 WO PCT/JP2015/073312 patent/WO2016039101A1/en active Application Filing
- 2015-08-20 CN CN201580048466.1A patent/CN107074617A/en active Pending
- 2015-09-08 TW TW104129691A patent/TWI657543B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54119513A (en) * | 1978-03-10 | 1979-09-17 | Asahi Glass Co Ltd | Glass for coating semiconductor |
| CN101250026A (en) * | 2006-12-27 | 2008-08-27 | 史考特公司 | Method for producing an electronic component passivated by lead free glass |
| CN102741185A (en) * | 2010-01-28 | 2012-10-17 | 日本电气硝子株式会社 | Glass for semiconductor coating and material for semiconductor coating using the same |
| CN103748049A (en) * | 2011-08-25 | 2014-04-23 | 日本电气硝子株式会社 | Glass for covering semiconductor element |
Non-Patent Citations (1)
| Title |
|---|
| 陈光等: "《新材料概论》", 30 April 2013, 国防工业出版社 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110642519A (en) * | 2019-09-25 | 2020-01-03 | 湖南利德电子浆料股份有限公司 | Encapsulation slurry for aluminum nitride substrate and preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201618242A (en) | 2016-05-16 |
| JP6410089B2 (en) | 2018-10-24 |
| WO2016039101A1 (en) | 2016-03-17 |
| JP2016056052A (en) | 2016-04-21 |
| TWI657543B (en) | 2019-04-21 |
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