CN107068698A - Using the imaging sensor and preparation method of quantum dot film - Google Patents
Using the imaging sensor and preparation method of quantum dot film Download PDFInfo
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- CN107068698A CN107068698A CN201611224308.XA CN201611224308A CN107068698A CN 107068698 A CN107068698 A CN 107068698A CN 201611224308 A CN201611224308 A CN 201611224308A CN 107068698 A CN107068698 A CN 107068698A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 30
- 239000002096 quantum dot Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000000926 separation method Methods 0.000 claims abstract description 132
- 229910052751 metal Inorganic materials 0.000 claims abstract description 131
- 239000002184 metal Substances 0.000 claims abstract description 131
- 238000002955 isolation Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000009413 insulation Methods 0.000 claims abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 56
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 56
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 24
- 229910052721 tungsten Inorganic materials 0.000 claims description 24
- 239000010937 tungsten Substances 0.000 claims description 24
- 239000004411 aluminium Substances 0.000 claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 206010034960 Photophobia Diseases 0.000 abstract description 3
- 208000013469 light sensitivity Diseases 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000000151 deposition Methods 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 239000007792 gaseous phase Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention provides a kind of imaging sensor of use quantum dot film and preparation method, the imaging sensor includes：Substrate surface is provided with bottom isolation layer；N layer separation layers on bottom isolation layer, the metal interconnecting wires bottom of adjacent upper separation layer at the top of the metal contact hole of lower floor separation layer with being in contact；N+1 layers of metal interconnecting wires are provided through in the N+1 layers of separation layer on n-th layer separation layer, N+1 layers of separation layer；N+1 layers of metal interconnecting wires bottom at the top of n-th layer metal contact hole with corresponding and being in contact；Metal electrode is provided with the top of N+1 layers of metal interconnecting wires；In surface of metal electrode and N+1 layers of insulation surface of exposure covered with quantum dot film.The imaging sensor of the present invention has stronger light sensitivity, bigger dynamic range and the Iimaging Stability more optimized.
Description
Technical field
The present invention relates to image sensor technologies field, and in particular to a kind of imaging sensor of use quantum dot film and
Preparation method.
Background technology
Imaging sensor refers to the device for converting optical signals to electric signal.What is be widely used at present mainly has ccd image
Sensor and cmos image sensor.
Quantum dot (quantum dot) is the nanocrystal of quasi-zero dimension, and ball is generally on a small amount of atomic building, form
Shape is spherical, and be made up of semi-conducting material (being generally made up of the B of II B~VI or IIIB~VB elements), stable diameter exists
2~20nm nano-particle.It can be lighted under specific wavelength, and school is easier in production using the screen of technology of quantum dots
Standard, possesses more accurately color representation, and possesses in terms of color saturation obvious advantage.Therefore, by quantum dot application
Prepared quantum thin film sensor has more frivolous volume, stronger light sensitivity, bigger dynamic in sensor
Scope and the image stabilization of optimization.
Because traditional sensor by making pixel become smaller improves resolution ratio, it means that each pixel is to light
Susceptibility it is lower, so as to reduce picture quality, and by contrast, quantum dot film is coated in below convex lens, closer
The characteristic of camera lens can more fully catch light, so as to be effectively improved lens performance.The biography that this new technology is made
Sensor can collect the light of twice of traditional sensors chip, and be transformed into electric signal with twice of efficiency, while it is given birth to
Produce cost very low.After quantum dot film, the thickness and volume of camera on the one hand can be reduced, on the other hand can be significantly
Improve the low photo-beat of imaging sensor and take the photograph performance and the dynamic range of image etc..
The content of the invention
In order to overcome problem above, the present invention is intended to provide the image that a kind of use quantum dot film carries out opto-electronic conversion is passed
Sensor and preparation method, so as to improve the performance of imaging sensor.
In order to achieve the above object, the invention provides a kind of imaging sensor, it is characterised in that including：
Substrate, bottom isolation layer is provided with substrate surface；
N layer separation layers on bottom isolation layer, wherein, metal interconnecting wires are provided with every layer of separation layer and positioned at gold
Belong to the metal contact hole on interconnection line；In every layer of separation layer, metal interconnecting wires are in contact with separation layer below, each metal
The bottom of contact hole corresponds and is in contact with the top of the metal interconnecting wires of equivalent layer；The top of metal contact hole with it is corresponding
Flushed at the top of the separation layer of layer；The metal interconnecting wires bottom of adjacent upper separation layer and the metal contact hole top of lower floor's separation layer
Portion is in contact；N is integer and N >=1；
N+1 layers of metal are provided through in the N+1 layers of separation layer on n-th layer separation layer, N+1 layers of separation layer
Interconnection line；N+1 layers of metal interconnecting wires bottom at the top of n-th layer metal contact hole with corresponding and being in contact；
Metal electrode is provided with the top of N+1 layers of metal interconnecting wires；
In surface of metal electrode and N+1 layers of insulation surface of exposure covered with quantum dot film.
Preferably, the adjacent pixel boundary of the N+1 layers of separation layer is additionally provided with pixel separation from structure.
Preferably, the height of the metal interconnecting wires is 0.4~0.5 micron, the height of the metal contact hole for 0.4~
0.5 micron, in N layers of separation layer, wherein the thickness of one layer of separation layer is 0.5~1 micron.
Preferably, in the N+1 layers of separation layer, silicon nitride layer is additionally provided between each separation layer.
Preferably, the height of the N+1 layers of separation layer is 0.5~0.6 micron.
Preferably, it is additionally provided with pad structure on N+1 layers of metal interconnecting wires around quantum dot film；The pad
Structure and the N+1 layers of separation layer are integral.
In order to achieve the above object, the invention provides a kind of preparation method of imaging sensor, it includes：
Step 01：One substrate is provided；Also, in substrate surface formation bottom isolation layer；
Step 02：First layer metal aluminium, also, patterning first layer metal aluminium are formed on bottom isolation layer, so that shape
Into first layer metal interconnection line；
Step 03：First layer separation layer is formed on first layer metal interconnection line and the bottom isolation layer of exposure；First layer
The top of the first layer metal interconnection line is higher by the top of separation layer；
Step 04：First layer contact hole is etched in first layer separation layer on corresponding to first layer metal interconnection line；
Step 05：Tungsten is filled in first layer contact hole, so as to form first layer metal contact hole；
Step 06：With first layer insulation surface formation second layer metal aluminium at the top of first layer metal contact hole, and
Circulation step 02 is repeated to step 05K times, until the metal interconnecting wires and metal that form N layer separation layer and equivalent layer are contacted
Hole；Wherein, K is integer and K >=0；N is integer and N >=1；And K+1=N；
Step 07：N+1 layers of metallic aluminium, also, patterning are formed on n-th layer separation layer and n-th layer metal contact hole
N+1 layers of metallic aluminium, so as to form N+1 layers of metal interconnecting wires；
Step 08：One layer of N+1 layers of separation layer are covered in N+1 layers of metal interconnecting wires and n-th layer insulation surface, and
And, at the top of N+1 layers of separation layer of planarization；
Step 09：Metal electrode is formed at the top of N+1 layers of metal interconnecting wires；
Step 10：One layer of quantum dot film is covered in surface of metal electrode and N+1 layers of insulation surface of exposure；It is flat
Remained above at the top of N+1 layers of separation layer after change at the top of N+1 layers of metal interconnecting wires.
Preferably, in the step 07, formed N+1 layer metal interconnecting wires after, N+1 layers of metal interconnecting wires with
Exposed n-th layer insulation surface covers one layer of silicon nitride layer.
Preferably, after the step 08 and before step 09, including：The pad knot defined in N+1 layers of separation layer
Structure region and non-pad structure region；Also, corresponding to N+1 layers on the N+1 layers of metal interconnecting wires in pad structure region
Pad structure is etched in separation layer；While the pad structure is etched, retain the corresponding to adjacent pixel boundary
Two layers of separation layer, so as to form pixel separation from structure；
Step 10 is specifically included：Surface of metal electrode and N+1 layers of separation layer table of exposure in non-pad structure region
Face covers one layer of quantum dot film.
Preferably, in the step 03, set and the first layer metal interconnection is higher by the top of the first layer separation layer
The height at the top of line is equal to the height of first contact hole；
In the step 08, set and be higher by the top of N+1 layers of separation layer after planarization at the top of N+1 layers of metal interconnecting wires
Height be equal to the pad structure height.
The quantum thin film sensor of the present invention has a stronger light sensitivity, bigger dynamic range and more optimizes
Iimaging Stability, in addition, the present invention carries out the absorption and conversion of light by using quantum dot film, it is ensured that in the picture of small size
In the design of element, it is also possible to obtain high-quality output image.
Brief description of the drawings
Fig. 1 is the structural representation of the imaging sensor of the preferred embodiment of the present invention
Fig. 2 is the schematic flow sheet of the preparation method of the imaging sensor of the preferred embodiment of the present invention
Fig. 3~15 show for each preparation process of the preparation method of the imaging sensor of the preferred embodiment of the present invention
It is intended to
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited in the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
The imaging sensor of the present invention includes：Substrate, bottom isolation layer is provided with substrate surface；Positioned at bottom isolation layer
On N layer separation layers, wherein, be provided with every layer of separation layer metal interconnecting wires and on metal interconnecting wires metal contact
Hole；In every layer of separation layer, metal interconnecting wires are in contact with separation layer below, the bottom of each metal contact hole and equivalent layer
Metal interconnecting wires top correspond and be in contact；The top of metal contact hole and the top of the separation layer of equivalent layer are neat
It is flat；The metal interconnecting wires bottom of adjacent upper separation layer is in contact with the metal contact hole top of lower floor's separation layer；N be integer and
N≥1；It is mutual that N+1 layers of metal are provided through in the N+1 layers of separation layer on n-th layer separation layer, N+1 layers of separation layer
Line；N+1 layers of metal interconnecting wires bottom at the top of n-th layer metal contact hole with corresponding and being in contact；In N+1 layers of metal
Metal electrode is provided with the top of interconnection line；In surface of metal electrode and N+1 layers of insulation surface of exposure covered with quantum dot
Film；And, it is provided with bonding pad opening on N+1 layers of metal interconnecting wires of N+1 layers of separation layer fringe region.
The present invention is described in further detail below in conjunction with accompanying drawing 1~15 and specific embodiment.It should be noted that, accompanying drawing
Using very simplified form, using non-accurately ratio, and only to facilitate, clearly reach aid illustration the present embodiment
Purpose.
Referring to Fig. 1, the use quantum dot film of the present embodiment carries out the imaging sensor of opto-electronic conversion, with two layers
Illustrate exemplified by separation layer, but the scope of this N+1 layer separation layer for being not used in the limitation present invention, wherein N is integer and N >=1.This
In embodiment, the metal interconnecting wires used is aluminum interconnectings, and the metal contact hole used is tungsten contact hole.
One substrate 1, bottom isolation layer 2 is provided with the surface of substrate 1；Specifically, substrate 1 here can be, but not limited to for
N-type or p-type twin polishing silicon chip.The material of bottom isolation layer 2 can be silica, the growth of the silica of bottom isolation layer 2
It can be, but not limited to use thermally grown mode, can also be grown by chemical gaseous phase depositing process, the silica of bottom isolation layer 2
Thickness can be, but not limited to as 0.5~1 micron.
First layer separation layer 4 on bottom isolation layer 2, wherein, first layer aluminium is provided with first layer separation layer 4 mutual
Line 3 and the first layer tungsten contact hole on first layer aluminum interconnecting 3, the first tungsten contact hole is by the first tungsten contact hole
Cushion 5 and tungsten metal 6；In first layer separation layer 4, the bottom of aluminum interconnecting 3 is in contact with bottom isolation layer 2, Mei Ge
The bottom of one layer of tungsten contact hole corresponds and is in contact with the top of corresponding first layer aluminum interconnecting 3；First layer tungsten is contacted
The top in hole is flushed with the top of first layer separation layer 4；Preferably, the height of first layer aluminum interconnecting 3 is 0.4~0.5 micron,
The height of first layer tungsten contact hole is 0.4~0.5 micron, and the thickness of first layer separation layer 4 is 0.5~1 micron；Need explanation
It is that of the invention is other with N layers of separation layer, wherein the thickness of one layer of separation layer is 0.5~1 micron.Here, cushion 5
It is composited by titanium layer and titanium nitride layer, the thickness of titanium layer here is 0.02~0.04 micron, and the thickness of titanium nitride layer is
0.02~0.04 micron.
The second layer is provided through in second layer separation layer 8' on first layer separation layer 4, second layer separation layer 8'
Aluminum interconnecting 7；The bottom of second layer aluminum interconnecting 7 at the top of first layer tungsten contact hole with corresponding and being in contact；Here second
The height that layer separation layer 8' is located at non-welding disking area can be 0.5~0.6 micron.
Silicon nitride layer (not shown) is additionally provided with the surface of first layer separation layer 4 and the performance of second layer aluminum interconnecting 7, is used for
Isolate first layer tungsten contact hole and second layer aluminum interconnecting 7.
The top of second layer aluminum interconnecting 7 is provided with metal electrode 9；
On the surface of metal electrode 9 of non-welding disking area and the second layer separation layer 8' surfaces of exposure covered with quantum dot film
10；
Pad structure 8 is provided with second layer aluminum interconnecting around quantum dot film 10, pad structure 8 is set in region
It is equipped with bonding pad opening.Here, pad structure 8 and second layer separation layer 8' are integral.In the present embodiment, the pixel on substrate 1
Have multiple, isolation structure 11 is additionally provided with second layer separation layer 8' adjacent pixel boundary.Isolation structure 11, pad structure
8 and second layer separation layer 8' may each be what is be integrally prepared from.
It should be noted that being described in the present embodiment by taking the imaging sensor with two layers of separation layer as an example, so exist
In other embodiments of the invention, the also image sensor architecture with three layers or more separation layers, for three layers or more every
The description of the aluminum interconnecting and tungsten contact hole of absciss layer and equivalent layer may be referred to two layers of the separation layer and its phase of the embodiment
The description of the aluminum interconnecting and tungsten contact hole answered, is repeated no more here.
Next the preparation method of the above-mentioned imaging sensor of the present embodiment is described in detail, referring to Fig. 2, including：
Step 01：Referring to Fig. 3, providing a substrate 1；Also, form bottom isolation layer 2 on the surface of substrate 1；
Specifically, substrate 1 here can be, but not limited to as N-type or p-type twin polishing silicon chip.The material of bottom isolation layer 2
Material can be silica, and the growth of the silica of bottom isolation layer 2 can be, but not limited to use thermally grown mode, can also pass through
Chemical gaseous phase depositing process grows, and the thickness of the silica of bottom isolation layer 2 can be, but not limited to as 0.5~1 micron.
Step 02：Referring to Fig. 4, first layer metal aluminium is formed on bottom isolation layer 2, also, patterning first layer gold
Belong to aluminium, so as to form first layer aluminum interconnecting 3；
Specifically, can be, but not limited to deposit first layer metal aluminium using physical gas-phase deposite method.It is then possible to but
It is not limited to using photoetching and anisotropic dry etch process come etching of first layer metallic aluminium, and removes after residual photoresist, shape
Into first layer aluminum interconnecting 3.
Step 03：Referring to Fig. 5, forming first layer isolation on first layer aluminum interconnecting 3 and the bottom isolation layer 2 of exposure
Layer 4；Specifically, can be, but not limited to deposit first layer separation layer 4 using chemical vapour deposition technique, first layer separation layer 4
Material can be silica, and the thickness of first layer separation layer 4 can be 0.5~1 micron, also, using chemically mechanical polishing
Technique planarizes the top of first layer separation layer 4.Here, the top of first layer separation layer 4 is higher by the top of first layer aluminum interconnecting
Portion；The height that the top of setting first layer separation layer 4 is higher by the top of first layer aluminum interconnecting 3 connects equal to first be subsequently formed
The height of contact hole.
Step 04：Referring to Fig. 6, etching first in first layer separation layer 4 on corresponding to first layer aluminum interconnecting 3
Layer contact hole；
Specifically, can be, but not limited to using photoetching and anisotropic dry etch process come etching of first layer separation layer 4,
So as in first layer separation layer 4 and corresponding to etching first layer contact hole on every first layer aluminum interconnecting 3.
Step 05：Fig. 7~8 are referred to, tungsten 6 is filled in first layer contact hole, so as to form the contact of first layer tungsten
Hole；
Specifically, first, referring to Fig. 7, can be, but not limited to using physical gas-phase deposition in first layer contact hole
Bottom and side wall and the surface buffer layer 5 of first layer separation layer 4, then, referring to Fig. 8, can be, but not limited to use
Chemical gaseous phase depositing process deposited metal tungsten 6 in buffering, 5, the full first layer contact hole of the filling of tungsten 6；Finally, can with but not
It is limited to grind away the cushion 5 and tungsten 6 on the surface of first layer separation layer 4 using CMP process, so as to form
One layer of tungsten contact hole.
Step 06：With first layer insulation surface formation second layer metal aluminium at the top of first layer tungsten contact hole, and again
Repetitive cycling step 02 is to step 05K times, until forming the aluminum interconnecting and tungsten contact hole of N layers of separation layer and equivalent layer；Its
In, K is integer and K >=0；N is integer and N >=1；And K+1=N；
Specifically, due to only having two layers of separation layer in the above-mentioned imaging sensor of the present embodiment, therefore, K here is
0, N is 1, that is, need not recycle repeat step 02~05.
Step 07：N+1 layers of metallic aluminium, also, patterning N are formed on n-th layer separation layer and n-th layer tungsten contact hole
+ 1 layer of metallic aluminium, so as to form N+1 layers of aluminum interconnecting；
Specifically, referring to Fig. 9, can be, but not limited to using physical vaporous deposition at the top of first layer tungsten contact hole and
The surface of first layer separation layer 4 deposition second layer metal aluminium 7'.Here, second layer metal aluminium 7' height is slightly above first layer metal
The height of aluminium 4.Then, referring to Fig. 10, can be, but not limited to etch using photoetching and anisotropic dry etch process
Two layers of metallic aluminium 7', and remove after residual photoresist, form second layer aluminum interconnecting 7.
In the present embodiment, after second layer aluminum interconnecting 7 is formed, it can be, but not limited to use chemical gaseous phase depositing process
The surface exposed in the surface of second layer aluminum interconnecting 7 and first layer separation layer 4 also covers one layer of silicon nitride layer (not shown).Nitridation
The thickness of silicon layer can be 0.05~0.1 micron.
Step 08：One layer of N+1 layers of separation layer are covered in N+1 layers of aluminum interconnecting and n-th layer insulation surface, also,
Planarize at the top of N+1 layers of separation layer；
Specifically, referring to Figure 11, it can be, but not limited to deposit on silicon nitride layer surface using chemical gaseous phase depositing process
Second layer separation layer 8', the second layer separation layer 8' material can be silica, and second layer separation layer 8' thickness can be
0.8~1 micron.
Here, it is flat for setting higher than the top of second layer aluminum interconnecting 7 at the top of the second layer separation layer 8' after planarization
The height that the top of second layer aluminum interconnecting 7 is higher by the top of second layer separation layer 8' after change is equal to the height of pad structure.
After step 08, and before step 09, in addition to：The pad structure region defined in N+1 layers of separation layer
With non-pad structure region；Also, corresponding to N+1 layers of separation layer on the N+1 layers of metal interconnecting wires in pad structure region
In etch pad structure；
Specifically, refer to Figure 12, in the welding structure region of definition, the second layer on second layer aluminum interconnecting 7 every
It can be, but not limited to etch the opening of pad structure 8 in absciss layer 8' using photoetching and anisotropic dry etch process,
While etching the opening of pad structure 8, retain the second layer separation layer 8' corresponding to adjacent pixel boundary, so as to form picture
Isolation structure 11 between element.
Step 09：Metal electrode is formed at the top of N+1 layers of aluminum interconnecting；
Specifically, forming metal electrode at the top of the second layer aluminum interconnecting in non-pad structure region here；Refer to figure
13, in the top of second layer aluminum interconnecting 7, second layer separation layer 8' surfaces, the surface of pad structure 8 and side wall and isolation junction
Metal electrode 9 is formed on the surface of the exposure of structure 11 and side wall, the material of metal electrode 9 can be titanium nitride.It can be, but not limited to
Using physical gas-phase deposite method come deposit metal electrodes 9, the thickness of metal electrode 9 can be 0.05~0.2 micron, preferably
For 0.1 micron.Then, Figure 14 is referred to, can be, but not limited to etch using photoetching and anisotropic dry etch process
Metal electrode 9 in addition to the top of second layer aluminum interconnecting 7, retains the metal electrode 9 at the top of second layer aluminum interconnecting 7, namely
It is the electrode for retaining non-pad structure region, and removes photoetching glue residua.
Step 10：One layer of quantum dot film is covered in surface of metal electrode and N+1 layers of insulation surface of exposure.
Specifically, Figure 15 is referred to, surface of metal electrode and N+1 layers of separation layer of exposure in non-pad structure region
Surface covers one layer of quantum dot film；It can be, but not limited to the second layer isolation using the surface of spin-coating method metal electrode 9 and exposure
Layer 8' surfaces cover one layer of quantum dot film 10.
It should be noted that in the present embodiment with prepare two layers of separation layer method be described, so the present invention its
In its embodiment, for repetitive cycling step 02 in the imaging sensor of three layers or more separation layers, can be used to step 05
Method prepare, here repeat no more.
Although the present invention is disclosed as above with preferred embodiment, right embodiment is illustrated only for the purposes of explanation, and
Be not used to limit the present invention, those skilled in the art can make without departing from the spirit and scope of the present invention it is some more
Dynamic and retouching, the protection domain that the present invention is advocated should be defined by claims.
Claims (10)
1. a kind of imaging sensor, it is characterised in that including：
Substrate, bottom isolation layer is provided with substrate surface；
N layer separation layers on bottom isolation layer, wherein, metal interconnecting wires are provided with every layer of separation layer and mutual positioned at metal
Metal contact hole on line；In every layer of separation layer, metal interconnecting wires are in contact with separation layer below, each metal contact
The bottom in hole corresponds and is in contact with the top of the metal interconnecting wires of equivalent layer；The top of metal contact hole and equivalent layer
Flushed at the top of separation layer；The metal interconnecting wires bottom of adjacent upper separation layer and phase at the top of the metal contact hole of lower floor separation layer
Contact；N is integer and N >=1；
N+1 layers of metal interconnection are provided through in the N+1 layers of separation layer on n-th layer separation layer, N+1 layers of separation layer
Line；N+1 layers of metal interconnecting wires bottom at the top of n-th layer metal contact hole with corresponding and being in contact；
Metal electrode is provided with the top of N+1 layers of metal interconnecting wires；And
In surface of metal electrode and N+1 layers of insulation surface of exposure covered with quantum dot film.
2. imaging sensor according to claim 1, it is characterised in that the adjacent pixel of the N+1 layers of separation layer point
Pixel separation is additionally provided with boundary from structure.
3. imaging sensor according to claim 1, it is characterised in that the height of the metal interconnecting wires is 0.4~0.5
Micron, during the height of the metal contact hole is 0.4~0.5 micron, N layer separation layer, wherein the thickness of one layer of separation layer is 0.5
~1 micron.
4. imaging sensor according to claim 1, it is characterised in that in the N+1 layers of separation layer, each separation layer it
Between be additionally provided with silicon nitride layer.
5. imaging sensor according to claim 1, it is characterised in that the height of the N+1 layers of separation layer is 0.5~
0.6 micron.
6. imaging sensor according to claim 1, it is characterised in that the N+1 layers of metal around quantum dot film
Pad structure is additionally provided with interconnection line；The pad structure and the N+1 layers of separation layer are integral.
7. a kind of preparation method of imaging sensor, it is characterised in that including：
Step 01：One substrate is provided；Also, in substrate surface formation bottom isolation layer；
Step 02：First layer metal aluminium, also, patterning first layer metal aluminium are formed on bottom isolation layer, so as to form the
Layer of metal interconnection line；
Step 03：First layer separation layer is formed on first layer metal interconnection line and the bottom isolation layer of exposure；First layer is isolated
The top of layer is higher by the top of the first layer metal interconnection line；
Step 04：First layer contact hole is etched in first layer separation layer on corresponding to first layer metal interconnection line；
Step 05：Tungsten is filled in first layer contact hole, so as to form first layer metal contact hole；
Step 06：With first layer insulation surface formation second layer metal aluminium at the top of first layer metal contact hole, and weigh again
Multiple circulation step 02 is to step 05K time, until the metal interconnecting wires and metal contact hole of N layers of separation layer of formation and equivalent layer；
Wherein, K is integer and K >=0；N is integer and N >=1；And K+1=N；
Step 07：N+1 layers of metallic aluminium, also, patterning N+1 are formed on n-th layer separation layer and n-th layer metal contact hole
Layer metallic aluminium, so as to form N+1 layers of metal interconnecting wires；
Step 08：One layer of N+1 layers of separation layer are covered in N+1 layers of metal interconnecting wires and n-th layer insulation surface, also, it is flat
At the top of N+1 layers of separation layer of smoothization；
Step 09：Metal electrode is formed at the top of N+1 layers of metal interconnecting wires；
Step 10：One layer of quantum dot film is covered in surface of metal electrode and N+1 layers of insulation surface of exposure；After planarization
N+1 layers of separation layer at the top of remain above N+1 layer metal interconnecting wires tops.
8. the preparation method of imaging sensor according to claim 7, it is characterised in that in the step 07, is being formed
After N+1 layers of metal interconnecting wires, one layer of nitridation is covered in N+1 layers of metal interconnecting wires and the n-th layer insulation surface of exposure
Silicon layer.
9. the preparation method of imaging sensor according to claim 7, it is characterised in that after the step 08 and in step
Before rapid 09, including：The pad structure region defined in N+1 layers of separation layer and non-pad structure region；Also, corresponding to weldering
Pad structure is etched in N+1 layers of separation layer on the N+1 layers of metal interconnecting wires in dish structure region；Etching the pad
While structure, retain the second layer separation layer corresponding to adjacent pixel boundary, so as to form pixel separation from structure；
Step 10 is specifically included：Covered in the surface of metal electrode in non-pad structure region and N+1 layers of insulation surface of exposure
One layer of quantum dot film of lid.
10. the preparation method of imaging sensor according to claim 7, it is characterised in that in the step 03, sets institute
The height for stating the top that the first layer metal interconnection line is higher by the top of first layer separation layer is equal to first contact hole
Highly；
In the step 08, the height being higher by the top of N+1 layers of separation layer after planarization at the top of N+1 layers of metal interconnecting wires is set
Height of the degree equal to the pad structure.
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| CN110819341A (en) * | 2019-10-31 | 2020-02-21 | 上海集成电路研发中心有限公司 | Manufacturing method of lead sulfide quantum dots, photoelectric detector and manufacturing method of photoelectric detector |
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