CN107068621A - Electric installation with encapsulating substance - Google Patents
Electric installation with encapsulating substance Download PDFInfo
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- CN107068621A CN107068621A CN201611053301.6A CN201611053301A CN107068621A CN 107068621 A CN107068621 A CN 107068621A CN 201611053301 A CN201611053301 A CN 201611053301A CN 107068621 A CN107068621 A CN 107068621A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B28/00—Compositions of mortars, concrete or artificial stone, containing inorganic binders or the reaction product of an inorganic and an organic binder, e.g. polycarboxylate cements
- C04B28/02—Compositions of mortars, concrete or artificial stone, containing inorganic binders or the reaction product of an inorganic and an organic binder, e.g. polycarboxylate cements containing hydraulic cements other than calcium sulfates
- C04B28/06—Aluminous cements
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B40/00—Processes, in general, for influencing or modifying the properties of mortars, concrete or artificial stone compositions, e.g. their setting or hardening ability
- C04B40/02—Selection of the hardening environment
- C04B40/0204—Selection of the hardening environment making use of electric or wave energy or particle radiation
- C04B40/0209—Electric, magnetic or electromagnetic fields
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B40/00—Processes, in general, for influencing or modifying the properties of mortars, concrete or artificial stone compositions, e.g. their setting or hardening ability
- C04B40/02—Selection of the hardening environment
- C04B40/0259—Hardening promoted by a rise in pressure
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B40/00—Processes, in general, for influencing or modifying the properties of mortars, concrete or artificial stone compositions, e.g. their setting or hardening ability
- C04B40/02—Selection of the hardening environment
- C04B40/0263—Hardening promoted by a rise in temperature
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B40/00—Processes, in general, for influencing or modifying the properties of mortars, concrete or artificial stone compositions, e.g. their setting or hardening ability
- C04B40/02—Selection of the hardening environment
- C04B40/0277—Hardening promoted by using additional water, e.g. by spraying water on the green concrete element
- C04B40/0281—Hardening in an atmosphere of increased relative humidity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00034—Physico-chemical characteristics of the mixtures
- C04B2111/00146—Sprayable or pumpable mixtures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Secondary Cells (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Sealing Battery Cases Or Jackets (AREA)
- Producing Shaped Articles From Materials (AREA)
- Building Environments (AREA)
Abstract
Electric installation with encapsulating substance.Propose a kind of band live part（12）Electric installation, the electric part is at least in part by with cement material（22）Encapsulating substance（20）Encapsulating, wherein encapsulating substance（20）With by least two discrete layers（22）The layer system of composition（22）, the discrete layer is respectively provided with cement material（22、22’、22”）.
Description
Technical field
The present invention relates to the electric installation with live part, the electric part is at least partially enveloping by encapsulating substance, and
It is related to the method for manufacturing this electric installation.
Background technology
Now, improving the reliability and efficiency of power electronics modules and sane sensing system and reducing its cost is
It is extremely important.Current encapsulating material（Epoxide, silicones material）It is limited to the temperature range at 200 DEG C.Pass through pin
To encapsulating material until the exploitation of 300 DEG C or 350 DEG C of temperature range, modern power semiconductor（Such as SiC）Operation
Scope can be extended more than 200 DEG C, and need not abandon the additional function of encapsulating material（For example protect to prevent ambient influnence, change
Kind thermal characteristic）.
A kind of semiconductor module there is known by DE102013112267A1, the semiconductor module is carried by different cementing
（Zementaten）Encapsulating substance constitute, covering semiconductor subassembly.In this case, the encapsulating substance also has and protected
Sheath and the attached property layer of increasing, both of which do not include cement（Zement）.
The content of the invention
Subject of the present invention is a kind of electric installation with live part, and the electric part is at least in part by with cement thing
The encapsulating substance encapsulating of matter, wherein encapsulating substance have the layer system being made up of at least two discrete layers, the discrete layer difference
With cement material.
Subject of the present invention or a kind of method for being used to manufacture the electric installation with live part, the electric part is at least partly
Ground is encapsulated by the encapsulating substance with cement material, and methods described has following step：
- at least one first and second cements material is provided；
- be applied to the first cement material as the first discrete layer on the electric part so that the electric part at least in part by
Encapsulating；
- be applied to the second cement material on the first discrete layer as the second discrete layer, to form the series of strata of encapsulating substance
System；And
- at least one of cement material of these discrete layers is handled.
In addition, subject of the present invention be using layer system as the electric part for electric installation encapsulating substance application, its
Middle layer system has at least two discrete layers for being respectively provided with cement material.
Electric part for example can be semiconductor devices, sensor element, inductance, electric capacity, battery cell, battery module
Or circuit arrangement.However, in scope of the invention, electric part can be understood as any active and passive device or high power
Device.In this case, electric installation can have carrier substrates, and electric part is disposed in the carrier substrates.
In scope of the invention, cement can be understood as the cement of inorganic, without metal hydration.This
In the case of, cement is to be hydrated（Namely chemically reacted with water）Mode is forming stable, insoluble compound
In the case of harden.In this case, cement is configured to the powder of essence stone roller when this method starts or before hydration,
The powder reacts, solidifies and hardened with water or mixing water in the case where forming hydrate.Hydrate herein can be with structure
Into spicule and/or small pieces, the spicule and/or small pieces are intermeshed and therefore cause the high robustness of cement.
In contrast, phosphate cement is not hardened with being hydrated mode.Acid-base reaction, salt gel are carried out in the case of forming salt gel
Most unbodied material is frozen into later.In the case of acid-base reaction, H+ (hydrogen ion) is replaced.
The cement can mainly be made up of calcium aluminate and drated calcium aluminate is constituted during being hydrated.Advantageously, glue
Gu agent material has alumina cement, especially it is made up of alumina cement.Alumina cement（Abridge CAC）In Europe according to DIN EN
14647 regulate and control.Alumina cement is main by calcium monoaluminateConstitute.
Alumina cement can for example have following component：
- Al2O3：More than or equal to 67.8 weight %
- CaO：Less than or equal to 31.0 weight %
- SiO2：Less than or equal to 0.8 weight %
- Fe2O3：Less than or equal to 0.4 weight %
In scope of the invention, discrete layer can be understood as the layer for having the interface being defined with its surrounding environment.Therefore, often
One special unit of individual discrete layer formation.Each discrete layer can largely have uniform chemistry and/or physics special
Property.These discrete layers can be mutually distinguishable on its chemistry and/or physical characteristic.At least one of these discrete layers can be by
It is configured to cement compound.That is, in other words, discrete layer, which can have, carries filler and/or additive and/or cementation
The cement matrix of agent active principle.These discrete layers can have following component：
- cement alumina cement：More than or equal to 8 weight % to less than or equal to 47 weight %（Such as SECAR 71）
- reactant water：More than or equal to 10 weight % to less than or equal to 28 weight %
- filler：More than or equal to 25 weight % to less than or equal to 82 weight %.
Filler can be selected from the group listd and constituted by down：
- Al2O3：About 150-200 μm of about 1 μm of thin d50 to thick d50
- Alpha-Si3N4：Thin about 1 μm to thick about 100 μm
- Hex.BN:Thin about 15 μm to thick about 250 μm
- SiC:Thin about 10-50 μm to thick about 600 μm
- AlN:Thin about 1 μm to thick about 100 μm
Cement material can for example apply by press process, course of injection and/or casting process.
Cure step or reactions steps are can be understood as in scope of the invention, the step of processing.The step of processing
Immersion process can such as be included.The step of processing, can also only include（It is a variety of）Cement material or（It is multiple）Cementation
The part processing of oxidant layer.That is, in other words, can be carried out in processing（It is a variety of）Cement material or（It is multiple）Cement
The part of layer or complete processing.In the step of the processing, for example, it can be glued applying first as the first discrete layer
Gu after agent material（Partly）Handle the first cement material and apply the second cement material as the second discrete layer
Afterwards（Partly）Handle the second discrete layer.It is also contemplated that, applying the whole layer of post processing of cement material
System.
In scope of the invention, layer system is appreciated that the layer complex to be made up of the layer being stacked with.Layer system
Can be in discrete layer at least two between have feature limiting bed.The feature limiting bed can be for example constructed at two
The common interface of discrete layer.Feature limiting bed forms a type of reaction zone, the reaction zone in this case
Internally there is local difference in structure, in chemical constituent and chemical characteristics compared with the two discrete layers.
In scope of the invention, encapsulating substance can be understood as any kind of encapsulation（Packaging）.
Because encapsulating substance is not only made up of related cement material but more specifically by with being respectively provided with
The layer system of multiple discrete layers of cement material is constituted, and on the one hand can realize that encapsulating substance is obvious more preferable at electric part
Adhesion.Its reason is：It is matingly optimised in terms of its adhesion characteristics that cement material can adapt to material, and layer
Structure optionally can be combined into layer system for material pairing.That is, in other words, the thermal expansion system of such as these layers
Number can be adapted so that between electric part and whole encapsulating substance possible calorifics or machinery mismatch be prevented from.Separately
On the one hand, the diffusion of the leap layer in the crack formed in one of discrete layer can be effectively prevented, because the crack
Only it is diffused into stratum boundary limit or is diffused into limiting bed, and is stopped there or by " buffering ".In addition, various discrete layer
And therefore the characteristic of whole encapsulating substance can be adapted to these requirements exactly, the favourable characteristic of wherein cement begins
It is maintained eventually in all discrete layers.Thus, for example a part of of these layers can implement additional function, for example as blunt
Change the chemical functional of structure or sacrifice layer, so that the cement material and possible external environment condition that provide protection against fluid are made
With, such as humidity, dust etc., and therefore protect electric part and metal to be corroded to prevent invasive.Therefore it can provide and carry
Improved mechanical and cracking-proof characteristic and the electric installation in higher life-span.
It is also advantageous that, at least two in discrete layer are partially positioned at electric part.That is, in other words, from
At least two dissipated in layer are arranged and/or are constructed so that described two layers all contact electric part.For example when the two of discrete layer
When kind cement material has the different capacity of heat transmission, the hot path of definition can be produced by the measure, enabling realize
To surrounding environment targetedly and faster hot driving.
Furthermore it is advantageous that layer system has the gradient on the thickness direction of the layer system.Have in this case
Profit, the gradient is the chemistry of cement material and/or the gradient of physical characteristic.Therefore, discrete layer can for example have
On its chemistry and/or the gradient of structural constituent.In this case, the gradient preferably pertains to the discrete layer of layer system step by step
Ground is constructed.That is, in other words, the gradient is not present within the discrete layer, but more specifically the gradient is deposited
It is from a discrete layer to next discrete layer.Therefore, various discrete layer can be respectively in terms of its chemistry and/or physical characteristic
Equably it is constructed.Application and/or the mode and/or construction or component of processing that the gradient can be based on cement material
To be formed.Gradient can be positive gradient or negative gradient.The gradient can preferably be reduced from electric part to outside.
The gradient can preferably be selected from down the group for lising composition：Porosity gradient, especially hole size and/or hole number
Gradient, density gradient, layer thickness gradient, the gradient of hydrauture, the gradient of component, the concentration gradient of cement active principle,
Concentration gradient, the concentration gradient of filler, the granular size gradient of filler of the reactive chemical functional of cement.This
In the case of, it can be envisaged that a large amount of other gradients, without departing from scope of the invention.
The cement material of different discrete layers can have similar chemical constituent.The difference of discrete layer for example can be only
It is present in the concentration of cement active principle and/or the concentration and/or the concentration of filler of the reactive chemical functional of cement.
The difference of discrete layer can also be present in hydrauture.The porosity or porosity of discrete layer --- for example on hole quantity or
The size in hole --- for example it can adjust or change by changing the filler concentration and/or granular size of filler.It is logical
Cross porosity and improve the crack prevention that can realize that weight reduces and improved.The latter is attributed to following situation：Crack is due to hole
And turn to and therefore worse can be spread within discrete layer and in addition across layer.In addition, upper with porosity
Rise, also rise for the suppression face of reaction, thus on the one hand can further improve adhesion characteristics.On the other hand, under heat exchange
Drop, thus isolation characteristic can again be changed or rise with the rising of porosity.In addition it is also possible to by porosity come
Adjust discrete layer and the therefore mechanical property namely hardness or flexibility of encapsulating substance.In addition, this some holes can also be filled out
Fill, therefore to provide additional function.
The density of discrete layer for example can keep porosity in the case of be adjusted by changing the concentration of filler or
Person changes.It is possible thereby to change the capacity of heat transmission of cement material.Selectivity, orientation the structure of discrete layer realizes orientation
Heat conduction.
Hydration gradient is interpreted as the gradient of hydrauture.Hydration for example can be by the change of cement share and water proportion
To adjust.Hydrauture explanation：The cement present in cement material is converted in order to viscous with how much percentage by hydration
Gu agent gel and therefore serve firm.Therefore, it again may be by being hydrated the gradient of gradient or hydrauture adjusting
The mechanical property of discrete layer.In addition it is also possible to a type of water buffering of thus integrated or offer.
The mechanical stress of interface can be reduced by layer thickness gradient.That is, in other words, for example can be according to material
Match to be adapted to the thermal coefficient of expansion of cement and therefore can realize the reduction of mechanical stress.
It is further advantageous that filler has following material or is made up of following material, the material is selected from following item group
Into group：Organic material, especially polymer, inorganic material especially ceramic material（Such as Al2O3, Zro2）, gas and gold
Belong to material.
Furthermore it is advantageous that the step of cement material of processing discrete layer is including at least one of following processing：
The heat treatment of-cement material；
- be exposed to cement material in the atmosphere of definition；
- pressure defined is applied to cement material;
- wavelength of definition and the electromagnetic radiation of intensity, such as UV radiation, infra-red radiation, visible ray are applied to cement material.
Heat treatment can include annealing steps in the lehr.Heat treatment can more than or equal to 40 DEG C to being equal to or
Carried out in temperature range equal to 95 DEG C.
Atmosphere is for example constructed with atmosphere or air until the air humidity of 100% raising.Should
Atmosphere can also have catalyst or accelerate agent molecule.
For example it efficiently and reliably can activate additive by the measure, to play its feature.
Brief description of the drawings
The present invention is exemplarily expanded on further by appended accompanying drawing below.Wherein：
Fig. 1 shows the diagram of the electric installation according to one embodiment of the present of invention；
Fig. 2 shows the diagram of the electric installation according to an alternative embodiment of the invention；And
Fig. 3 shows another electric installation 10 " according to the present invention.
Embodiment
Figure 1 illustrates the electric installation according to the present invention, the electric installation is equipped with reference numeral 10 on the whole at it.
Electric installation 10 has live part 12.The electric part 12 is configured to semiconductor devices 12.Electric part 12 is arranged in load
On body substrate 14.Layers of copper 16 is disposed between electric part 12 and carrier substrates 14.Layers of copper 16 has a variety of in this case
Function, that is, improve thermally coupled and hot driving and make there is provided the electrical contact possibility for electric part 12 and if necessary in coating
For the flow barrier of encapsulating substance.
Electric part 12 is connected by crimping lead 18 with the side relative with the electric part of carrier substrates 14, thus, it is possible to
Realize electric part 12 from outside electrical contact.In this case, carrier substrates 14 for example may be constructed such that plate, this external application
It is desirably integrated into the printed conductor or electrical contacts of the electric part 12 of contact in the plate.Printed conductor can also be arranged in
On the surface of carrier substrates 14.Carrier substrates 14 can be configured to chip.
Electric installation 10 also has the encapsulating substance 20 with layer system 22.Encapsulating substance 20 and layer system 22 are configured to top
Encapsulate in portion（Glob-Top）.Encapsulating substance 20 or layer system 22 are disposed at carrier substrates 14.In this case, series of strata
System 22 encapsulates electric part 12 in the face not covered by carrier substrates 14.Therefore, electric part 12 is fully by the He of carrier substrates 14
Encapsulating substance 20 is encapsulated.Layer system 22 yet cover carrier substrates 14 a part, by the part by the encapsulating substance with
Carrier substrates 14 are firmly attached.
Layer system 22 has the first discrete layer 24, the second discrete layer 24 ' and the 3rd discrete layer 24 ".Discrete layer 24,24 ',
24 " overlie one another and encapsulate electric part 12.First discrete layer 24 is arranged in inside, namely is abutted with electric part 12.Second from
Dissipate layer 24 ' medially to arrange, namely be arranged between the first discrete layer 24 and the 3rd discrete layer 24 ".3rd discrete layer 24 " is arranged
Abutted in outside, namely with the surrounding environment of electric installation 10.
According to the present invention, these discrete layers 24,24 ', 24 " have cement material 26,26 ', 26 " respectively.In this feelings
Under condition, the first discrete layer 24 has the first cement material 26.Second discrete layer 24 ' has the second cement material 26 '.3rd
Discrete layer 24 " has the 3rd cement material 26 ".In an illustrated embodiment, all discrete layers 24,24 ', 24 " have respectively
There is filler 28.The filler 28 is configured to granular.Filler 28 is substantially uniformly distributed over discrete layer respectively
24th, in each in 24 ', 24 ".The filler 28 each with substantially the same concentration of discrete layer 24,24 ', 24 ".Filling
The granular size of thing 28 discrete layer 24,24 ', 24 " it is each within be substantially constant.However, filler 28
Granular size from internally positioned the first discrete layer 24 by the second discrete layer 24 ' placed in the middle until the discrete layer 24 " of outside and
Increase.Therefore, the gradient of the granular size with filler 28 on its thickness direction 30 of layer system 22.Thickness direction 30 is at this
Corresponding to the thickness direction of various discrete layer 24,24 ', 24 " in the case of kind.That is, in other words, the then particle of filler 28
The gradient of size is continuously increased from the first discrete layer 24 to the 3rd discrete layer 24 ", but more specifically from first
The discrete layer of discrete layer 24 to the second 24 ' and increase step by step and from the second discrete layer 24 ' to the 3rd discrete layer 24 " step by step
Ground increase.Therefore, the firm of encapsulating substance 20 can be changed by the gradient of the granular size of filler 28 according to the present invention
Property and gap fillable.
Layer system 22 also has feature limiting bed 32.Feature limiting bed 32 is arranged in discrete layer 24,24 ', 24 "
Between.Feature limiting bed 32 is configured to reaction zone in this case.Feature limiting bed 32 be not therefore individually by
It is coated, but the interface more specifically being had been formed on during the process between various discrete layer 24,24 ', 24 ".
Therefore, these feature limiting beds 32 internally have local difference in structure, in chemical constituent and chemical characteristics.
Thus, substantially preferably adhesion can be especially realized within encapsulating substance 20.In addition, gap is in discrete layer
24th, 24 ', 24 " interface or the diffusion at feature limiting bed 32 can effectively be prevented from.
Figure 2 illustrates another electric installation 10 ' according to the present invention.Electric installation 10 ' is similar with the device 10 in Fig. 1
Ground is fabricated.But, on the one hand, electric installation 10 ' has a large amount of electric parts 12,12 '.These electric parts 12,12 ' include semiconductor
Device 12 and sensor element 12 '.In this case, encapsulating substance 20 ' or layer system 22 ' encapsulate all electric parts
12、12’.On the other hand, encapsulating substance 20 ' and the plane earth of layer system 22 are constructed.
According to the present invention, electric installation 10 ' equally has the upper gradient in the thickness direction 30 of layer system 22 '.But with
Embodiment in Fig. 1 is different, and the gradient of hydration gradient or hydrauture is related in this case.As above illustrated,
Hydrauture explanation：The cement present in cement material is converted for cement gel simultaneously with how much percentage by being hydrated
And therefore serve firm.In this case, on the thickness direction 30 of layer system 22 ' gradient and therefore hydrauture
Outwards reduction.Discrete layer 24,24 ', 24 " it is each within hydrauture in this case again be substantially the same.Water
It is right only to rise step by step to next discrete layer 24 ', 24 " from a discrete layer 24,24 '.Therefore, the first discrete layer 24 has
Highest hydrauture, and the 3rd discrete layer 24 " has minimum hydrauture.
Fig. 3 shows another electric installation 10 " according to the present invention.Electric installation 10 " with the device 10 ' in Fig. 2 similarly by
Build and therefore similarly have the structure of a large amount of electric parts 12,12 ' and plane.It is different from the embodiment in Fig. 2, series of strata
System 22 " additionally has path 34.Path 34 is the part of discrete layer, and from relative to electric part 12,12 ' be disposed in into
Discrete layer 24 ', 24 " outside one step, which is passed through, to be disposed in layer 24 or layer 24,24 ' therebetween and extends up to electric part 12,12 '
One of.Be in path 34 the 3rd discrete layer 24 " part and an equally path with cement material 26 " through the
One discrete layer 24 and the second discrete layer 24 ' and extend up to electric part 12.Therefore, electric part 12 not only with the first discrete layer 24 and
And contacted with the 3rd discrete layer 24 ".In path 34 it is a part for the second discrete layer 24 ' and equally there is cement material
26 ' another path extends up to electric part 12 ' through the first discrete layer 24.Therefore, electric part 12 ' not only with first from
Dissipate layer 24 and contacted with the second discrete layer 24 ".In this case, path 34 for example constitutes hot path in the following way：
Two kinds of cement materials 26,26 ', 26 " of discrete layer 24,24 ', 24 " have the different capacity of heat transmission respectively so that can realize
To surrounding environment targetedly and thus faster hot driving.
Manufacture according to the present invention electric installation 10 when, provide first such as powder type cement material 26,26 ',
26”.And then, the filler 28 for being respectively provided with different granular sizes is mixed into the every kind of of cement material 26,26 ', 26 "
In so that obtain three kinds of cement things of the filler 28 with substantially the same filler concentration but variable grain size
Matter 26,26 ', 26 ".Then, the water for carrying cosolvent Melflux if necessary by fluid composition, for example is mixed into cement respectively
In material 26,26 ', 26 ".First cement material 26 with smallest particles size, moist is then evacuated
（evakuiert）, be applied on electric part 12 and for example by spray or moulding by casting as the first discrete layer 24 by into
Shape.Then, the first cement material 26 is heat-treated or annealed, for example 60 DEG C and 90% relative air humidity under, thus
Carry out the gel completely or partially of the first discrete layer 24, crystallization, spiculation（Vernadelung）And hardening.At this
In the case of kind, the pre- Water run-off preventing of air humidity（Water-cement value）And temperature causes the composition of desired structure.Immediately
, the second cement material 26 ' with medium grain size, moist is evacuated, is applied on the first discrete layer 24 simultaneously
And be for example formed by spray or moulding by casting as the second discrete layer 24 '.Then, the second cement material 26 ' is by warm
Reason or anneal, for example 60 DEG C and 90% relative air humidity under, thus carry out the complete or portion of the second discrete layer 24 '
Gel, crystallization, spiculation and the hardening divided.In this case, if necessary the first and second discrete layers 24,24 ' it
Between conformation function limiting bed 32.And then, the 3rd with the largest particles size, moist cement material 26 " evacuated,
It is applied on the second discrete layer 24 ' and is for example formed by spray or moulding by casting as the 3rd discrete layer 24 ".So
Afterwards, the 3rd cement material 26 " is heat-treated or annealed, for example 60 DEG C and 90% relative air humidity under, thus carry out
Gel completely or partially, crystallization, spiculation and the hardening of 3rd discrete layer 24 ".In this case, exist if necessary
Second and the 3rd conformation function limiting bed 32 between discrete layer 24 ', 24 ".Finally, encapsulating substance 20 or layer system 22 are optional
Ground is processed, and is then for example demolded and shifts at 300 DEG C.
Claims (15)
1. a kind of band live part（12、12’）Electric installation, the electric part is at least in part by with cement material（26）'s
Encapsulating substance（20；20’；20”）Encapsulating, it is characterised in that the encapsulating substance（20；20’；20”）With by least two from
Dissipate layer（24、24’、24”）The layer system of composition（22；22’；22”）, the discrete layer is respectively provided with cement material（26、26’、
26”）.
2. electric installation according to claim 1（10）, it is characterised in that the cement material（26、26’、26”）In
At least one has alumina cement or is made up of alumina cement.
3. electric installation according to claim 1 or 2（10）, it is characterised in that the layer system（22；22’；22”）Have
It is respectively provided with cement material（26、26’、26”）At least one other discrete layer（24、24’、24”）.
4. the electric installation according to one of preceding claims（10）, it is characterised in that the layer system（22；22’；22”）
In the discrete layer（24、24’、24”）At least two between have feature limiting bed（32）.
5. the electric installation according to one of preceding claims（10）, it is characterised in that the discrete layer（24、24’、24”）
In at least two be partially disposed within the electric part（12、12’）Place.
6. the electric installation according to one of preceding claims（10）, it is characterised in that the layer system（22；22’；22”）
With in the layer system（22；22’；22”）Thickness direction（30）On gradient.
7. electric installation according to claim 6（10）, it is characterised in that the gradient is on the layer system（22；22’；
22”）Discrete layer（24、24’、24”）It is constructed step by step.
8. the electric installation according to claim 6 or 7（10）, it is characterised in that the gradient is the cement material
（26、26’、26”）Chemistry and/or physical characteristic gradient.
9. the electric installation according to one of claim 6 to 8（10）, it is characterised in that the gradient, which is selected from down, lists composition
Group：Porosity gradient, the especially gradient of hole size and/or hole number, density gradient, layer thickness gradient, hydration gradient, group
Point gradient, the concentration gradient of cement active principle, the concentration gradient of the reactive chemical functional of cement, filler（28）
Concentration gradient, filler（28）Granular size gradient.
10. electric installation according to claim 9（10）, it is characterised in that the filler（28）With following material or
Person is made up of following material, and the material is selected from the group that lower item is constituted：It is organic material, especially polymer, inorganic material, inorganic
Material, especially ceramic material, gas and metal material.
11. the electric installation according to one of preceding claims（10）, it is characterised in that the electric part（12、12’）It is half
Conductor device（12）, sensor element（12’）, inductance, electric capacity, battery cell, battery module or circuit arrangement.
12. a kind of be used to manufacture especially in accordance with the band live part described in one of preceding claims（12、12’）Electric installation
（10）Method, the electric part is at least in part by with cement material（26）Encapsulating substance（20；20’；20”）Bag
Envelope, this method has the following steps：
- at least one first and second cements material is provided（26、26’、26”）；
- by the first cement material（26）It is used as the first discrete layer（24）It is applied to the electric part（12、12’）On；
- by the second cement material（26’）It is used as the second discrete layer（24’）It is applied to first discrete layer（24）On,
To form the encapsulating substance（20；20’；20”）Layer system（22；22’；22”）；And
- to the discrete layer（24、24’）Cement material（26、26’）At least one of handled.
13. method according to claim 12, it is characterised in that the processing discrete layer（24、24’、24”）Cement
Material（26、26’、26”）The step of including at least one of following processing：
- cement the material（26、26’、26”）Heat treatment；
- by the cement material（26、26’、26”）In the atmosphere of definition；
- to the cement material（26、26’、26”）Apply the pressure of definition；
- to the cement material（26、26’、26”）Apply electromagnetic radiation.
14. the method according to claim 12 or 13, it is characterised in that the cement material（26、26’、26”）Respectively
It is constructed and/or applies and/or handle so that in the layer system（22；22’；22”）In on the layer system（22；22’；
22”）Discrete layer（24、24’、24”）Form gradient step by step.
15. a kind of layer system（22；22’；22”）As for electric installation（10）Electric part（12、12’）Encapsulating substance（20；
20’；20”）Application, the electric installation is especially in accordance with the electric installation described in one of claim 1 to 11 or according to right
It is required that one of 12 to 14 manufacture, wherein the layer system（22；22’；22”）With being respectively provided with cement material（26、26’、
26”）At least two discrete layers（24、24’、24”）.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102015223449.5 | 2015-11-26 | ||
| DE102015223449.5A DE102015223449A1 (en) | 2015-11-26 | 2015-11-26 | Electric device with a wrapping compound |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107068621A true CN107068621A (en) | 2017-08-18 |
| CN107068621B CN107068621B (en) | 2022-05-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611053301.6A Active CN107068621B (en) | 2015-11-26 | 2016-11-25 | Electrical device with encapsulated substance |
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| Country | Link |
|---|---|
| JP (1) | JP6902857B2 (en) |
| CN (1) | CN107068621B (en) |
| DE (1) | DE102015223449A1 (en) |
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| CN111278786A (en) * | 2017-09-01 | 2020-06-12 | 罗伯特·博世有限公司 | Composite material and method for producing same |
| CN112435855A (en) * | 2020-11-17 | 2021-03-02 | 安徽富航电子科技发展有限公司 | High-temperature-resistant winding type mica capacitor and preparation method thereof |
| WO2022139674A1 (en) * | 2020-12-23 | 2022-06-30 | Heraeus Deutschland Gmbh & Co. Kg. | Process for the manufacture of encapsulated semiconductor dies and/or of encapsulated semiconductor packages |
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| DE102018215694A1 (en) | 2018-09-14 | 2020-03-19 | Robert Bosch Gmbh | Potting compound, electrically insulated electrical or electronic component and method for its electrical insulation |
| BE1026677B1 (en) * | 2018-10-05 | 2020-05-04 | Doorsolutions Bvba | MORTAR FOR FIRE-RESISTANT SEALING AND / OR FILLING OF OPENINGS |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN107068621B (en) | 2022-05-24 |
| JP2017123457A (en) | 2017-07-13 |
| JP6902857B2 (en) | 2021-07-14 |
| DE102015223449A1 (en) | 2017-06-01 |
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