CN107066022A - A kind of low-power consumption has the high-voltage starting circuit of undervoltage lookout function concurrently - Google Patents
A kind of low-power consumption has the high-voltage starting circuit of undervoltage lookout function concurrently Download PDFInfo
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- CN107066022A CN107066022A CN201710416349.7A CN201710416349A CN107066022A CN 107066022 A CN107066022 A CN 107066022A CN 201710416349 A CN201710416349 A CN 201710416349A CN 107066022 A CN107066022 A CN 107066022A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/625—Regulating voltage or current wherein it is irrelevant whether the variable actually regulated is ac or dc
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Abstract
The invention belongs to field of analog integrated circuit, the high pressure resistant start-up circuit that a kind of low-power consumption has undervoltage lookout function concurrently is specifically proposed.Circuit invention is included：Enable/undervoltage lockout circuit, high pressure resistant PTAT current generation circuit, secondary source voltage generation circuit.Enable/undervoltage lockout circuit provides bias current after supply voltage reaches predetermined value to PTAT circuit.When supply voltage is too small, subsequent conditioning circuit is locked, it is not worked；High pressure resistant PTAT current generation circuit provides stable bias current for subsequent conditioning circuit, and is exported eventually through NPN pipes；Secondary source potential circuit constitutes its output voltage by the burning voltage and bipolar transistor base emitter voltage of voltage-regulator diode；The present invention can both realize circuit start function, and undervoltage lookout function can be realized again, and circuit is adapted to high pressure, while power consumption is very low, especially under high-pressure situations.
Description
Technical field
The height of undervoltage lookout function is had concurrently the invention belongs to Analogous Integrated Electronic Circuits technical field, more particularly to a kind of low-power consumption
Press start-up circuit.
Background technology
In current integrated circuit technique, start-up circuit and undervoltage lockout circuit are all indispensable modules.Start-up circuit
It is the rapid start-up circuit in power supply electrifying so that the startup of circuit is uncorrelated to power up, so as to allow its working condition more
Plus stably.Undervoltage lockout circuit is more that is, supply voltage, which is less than, is in power supply electricity shortage or power failure
The set minimum working power threshold value of system, carrys out breaking circuit.So as to reach protection battery, reduce unnecessary power consumption and keep away
Exempt from maloperation.Both of which is the stable necessary condition of guarantee system.
Nowadays, some integrated circuits realize above-mentioned two function respectively using two circuits.Some are using a circuit reality
Existing two functions.But most of is all the compromise between power consumption and speed, and especially in high voltage, power consumption is very big.As Fig. 3 is
Traditional undervoltage lockout circuit, the circuit is just not suitable for high pressure, and response speed is general, while power consumption is very big, especially in sampling
In the case that the voltage ratio at end is higher.
The content of the invention
The problem of present invention is solved is to provide a kind of high-voltage starting circuit with undervoltage lookout function of low-power consumption.
In order to solve the above problems, the low-power consumption that the present invention is provided has the high-voltage starting circuit of undervoltage lookout function, bag concurrently
Contain：Enable/undervoltage lockout circuit, high pressure resistant PTAT current generation circuit, secondary source voltage generation circuit.
Enable/the undervoltage lockout circuit includes five resistance, four NPN, six pressure-resistant PNP, two PMOS, three consumptions
Most type NMOS, a NJFET.The one end of resistance 3 connects input EN, other end connection NJEFT leakages；
NJFET grid connection ground, source connects the leakage of PMOS 27.PMOS 27 and PMOS 28 are in diode connection side
Formula, and both bodies connect the source of PMOS 27.The source of the leakage connection PMOS 28 of PMOS 27, the leakage connection of PMOS 28
Ground；
The first end of resistance 26 connects the leakage of PMOS 27, the second end connection NPN32 base stages.NPN32 emitting stages connect resistance
31 first ends, the source of colelctor electrode connection depletion type NMOS tube 34.The end of resistance 31 second connects the first end of resistance 30, resistance 30 second
End connection ground.PNP29 emitting stages connect the first end of resistance 30, colelctor electrode connection ground, base stage connection NPN32 base stages.NPN33 base stages
Connect NPN32 base stages, the emitting stage connection first end of resistance 30, the source of colelctor electrode connection depletion type NMOS tube 35.Depletion type NMOS
The body of pipe 34,35 all connects respective source, and both grid ends all connect NJFET source, both leakages be connected to node 6B and
6A；
The emitting stage of PNP36,37,38 and 39 all connects power supply.PNP36,37 colelctor electrodes and PNP36,38 base stage all connect
In node 6B, PNP38,39 colelctor electrode and PNP37,39 base stage is all connected in node 6A；
PNP40 base stage connecting node 6B, emitting stage connection power supply, colelctor electrode connects the first end of resistance 21.Resistance 21
The second end connect NPN22 colelctor electrode.NPN22 is in diode connected mode, its emitting stage connection ground.NPN24 base stages are connected
NPN22 base stage, emitter stage connection ground, the source of colelctor electrode connection depletion type NMOS tube 23.The body connection of depletion type NMOS tube 23
Its source, grid connect NJFET source, leakage connection NJFET leakage.
Resistance 21 in the enable/undervoltage lockout circuit has positive temperature coefficient.
NPN22 and NPN24 emitter areas ratio in the enable/undervoltage lockout circuit is 5:1.
The high pressure resistant PTAT current generation circuit includes four pressure-resistant PNP, four resistance, eight NPN, four LDPMOS
With two LDNMOS.PNP40 base stage connecting node 6B, emitter stage connection power supply, colelctor electrode connection NPN41 colelctor electrodes.NPN41
Base stage connects the first end of resistance 56.
PNP43,44 base stage connecting node 6A, emitter stage is all connected with power supply, and colelctor electrode connects LDNMOS pipes 45 respectively
Leakage and NPN48 colelctor electrode.LDNMOS pipes 45 are in diode connected mode, its body connection source, source connection NPN47 colelctor electrode.
NPN47,48 base stages connect together, and connect NPN48 colelctor electrode, and both emitter stages connect the first end of resistance 49,50 respectively.
The second end connection ground of resistance 49,50.NPN42 base stages connect NPN41 colelctor electrode, its emitter stage connection ground, colelctor electrode connection
NPN47 colelctor electrode.NPN51 base stages connect NPN47 colelctor electrode, the emitter stage connection first end of resistance 50, colelctor electrode connection
The source of LDNMOS pipes 52.The body of LDNMOS pipes 52 connects its source, and it leaks connecting node 9A.The source of LDPMOS pipes 53,54,55,58
All connect power supply, 53 grid, leakage and 54,55,58 grid all connecting node 9A.The first of the leakage connection resistance 50 of LDPMOS pipes 54
End.
The first end of the leakage connection resistance 56 of LDPMOS pipes 55.The second end connection PNP57 of resistance 56.PNP57 is in two poles
Pipe connected mode, its colelctor electrode connection ground.The leakage connection NPN11 of LDPMOS pipes 58 colelctor electrode.NPN11 emitter stage connection
Ground, the base stage connection first end of resistance 14.The end of resistance 14 second connects NPN11 colelctor electrode.NPN13 colelctor electrode connection resistance 14
Second end, base stage connects NPN41 colelctor electrode, emitter stage connection ground.NPN12 base stages connect the second end of resistance 14, emitter stage
Connection ground, colelctor electrode connection current output terminal.
The secondary source voltage generation circuit includes a LDPMOS, two depletion types NMOS, a NPN, two Xiao Te
Based diode.The grid connecting node 9A of LDPMOS pipes 15, source connection power supply, the leakage of leakage connection depletion type NMOS tube 16.Depletion type
NMOS tube 16 is in diode connected mode, body connection source, the direction end of source connection Schottky diode 19.Schottky diode 19
Positive direction connection ground.The leakage connection power supply of depletion type NMOS tube 17, the grid of grid connection depletion type NMOS tube 16, body connection source,
Source connects output voltage terminal.NPN18 is in diode connected mode, colelctor electrode connection output voltage terminal, emitter stage connection Schottky
The direction end of diode 20.The positive direction end connection ground of Schottky diode 20.
The high-voltage starting circuit that the low-power consumption that the present invention is provided has undervoltage lookout function concurrently realizes that power supply electrifying starts electricity
Road function, again can when power supply voltage supply is not enough lock-in circuit.The voltage that the circuit that the present invention is provided is adapted to is up to high pressure 44V.
Enable circuit and make it that circuit operation is more reliable and more stable using sluggish, the load of the comparator of reference is connected using diode
The bipolar transistor of mode and the bipolar transistor of cross-couplings connected mode are in parallel, can improve the gain of comparator,
So as to improve response speed.After circuit stability work simultaneously, relative to traditional mode, power consumption is lower.
Brief description of the drawings
Fig. 1 is that high-voltage starting circuit that low-power consumption of the present invention has undervoltage lookout function concurrently realizes structural representation；
Fig. 2 is the circuit theory diagrams of enable/undervoltage lockout circuit in the present invention；
Fig. 3 is the circuit theory diagrams of traditional undervoltage lockout circuit；
Fig. 4 is the circuit theory diagrams of high pressure resistant PTAT current generation circuit in the present invention.
Embodiment
Below in conjunction with the accompanying drawings, highly preferred embodiment of the present invention is provided, and gives detailed description.
Fig. 1 show the high-voltage starting circuit that low-power consumption of the invention has undervoltage lookout function concurrently, comprising：Enable/under-voltage
Lock-in circuit, high pressure resistant PTAT current generation circuit, secondary source voltage generation circuit.
Sampled voltage is inputted from EN ports.Sampled voltage can be resistance to source voltage or other modes.When
When it reaches enable threshold value, enable/undervoltage lockout circuit 1 provides bias current by node 6A to PTAT current generation circuit.
When under-voltage locking, by under-voltage locking logical output circuit 8, PTAT circuit is locked, and subsequent conditioning circuit is no longer worked.It is secondary
Circuit for generating source voltage provides supply voltage for subsequent conditioning circuit, primarily to solving that follow-up some circuits are not high voltage bearing asks
Topic.
Circuit 1 produces one by resistance 3 and current source 2 and produces hysteresis voltage VH=I0R1'.The work of the hysteresis voltage
With being the maloperation that prevents the noise in circuit from producing.
The function of input voltage switching circuit is sampling EN ends input voltage, and is transmitted to reference comparator
In.When the voltage ratio for inputting EN ends is relatively low, the circuit carries intact be transferred to of voltage at EN ends equivalent to wire
Reference comparator input.When EN terminal voltages than it is larger when, the input impedance of the circuit will become big, and output voltage will be locked
It is fixed.So that circuit power consumption will not become big greatly with sampling end EN change.
Implement such as the circuit 4 in Fig. 2, a NJFET connection input and output end.NJFET grid are grounded.When EN ends
When sampled voltage is very low, NJFET channel impedance very little, while the input current very little at EN ends, so consumed on NJFET
Pressure drop is very low, i.e., 3A node voltages are equal to 4A node voltages.When EN terminal voltages are very big, NJFET channel impedance becomes very big,
So as to limit the input current at EN ends, while the voltage on embedding the live in 4A of the PMOS 27 and 28 of diode connected mode, so as to limit
The input voltage of reference comparator is made so that the electric current of circuit keeps very little.
Generation is equal in the collector current of transistor 32 and 33 when reference comparator is overturn using circuit
Characteristic.In input formation one reference voltage, i.e. voltage on the basis of turnover voltage.The turnover voltage is：
Resistance 26 prevents base terminal from high current occur.Transistor 29 is to prevent that the base voltage of collective's pipe 32 is excessive.Two
Depletion type NMOS tube is to carry out clamped, the protection circuit in high pressure to the colelctor electrode of transistor 32 and 33.
Active load is brilliant using the bipolar transistor of diode connected mode and the bipolarity of cross-couplings connected mode
Body pipe is in parallel.The impedance of the transistor of diode connection is 2/gm, and the impedance of cross-linked transistor is -2/gm, so two
Person's impedance in parallel equivalent to infinity so that comparator it is very big in the gain that it overturns point place, and so that its overturns
Speed is greatly improved.
It is PTAT current in the electric current of the generation of upset point.The electric current is transferred to by current mirror 36,40 and 22,24 and adopted
Sample port, so as to produce hysteresis.Because PTAT current is positive temperature coefficient, here using the electricity of a positive temperature coefficient
Hinder to offset the positive temperature effect of PTAT current.Specific implementation such as Fig. 2 circuit 2.Here the expression formula of I0 electric currents：
Wherein, Iin is PTAT current, and its value isSo
So the temperature coefficient of the electric current is：
TCRR0It is R0 temperature coefficient.So as long as the coefficient of appropriate bracket is zero, then the temperature coefficient of the electric current is zero.
Depletion type NMOS tube is that the colelctor electrode progress to transistor 24 is clamped, prevents EN terminal voltages from crossing high breakdown 24
Colelctor electrode.
Traditional circuit of the enable/undervoltage lockout circuit relative to Fig. 2, applicable voltage range is expanded to high pressure, simultaneously
Circuit start speed is greatly improved, and circuit power consumption reduces.
Fig. 4 is the specific implementation circuit diagram of PTAT current generation circuit.When circuit starts to enable, circuit passes through transistor
43,44 produce biasing circuit, and PTAT circuit is started working.PTAT current is produced in the place branch road of transistor 53,54.
The mirror image PTAT current of transistor 55 after circuit is enabled, and flow through resistance 56 and transistor 57 to produce an electricity
Press and the base stage of transistor 41 is biased.While no current in transistor 40 so that node 8A pulls down to ground potential, transistor
42 and 43 are turned off.When enabling before generation or under-voltage locking occurs, because PTAT circuit does not work, no current flows through
Resistance 56 and transistor 57 so that the base potential of transistor 41 is low potential, the i.e. no current of transistor 41.But transistor 40 is led
Logical, so that node 8A is essentially pulled up to a high potential, transistor 42 and 13 is turned on, and its collector potential is moved ground electricity to
Position, i.e. lock-in circuit.Ensure that no current is produced circuit in the locked state.
Transistor 51 is for the clamped firmly collector potential of transistor 47 in PTAT circuit 9.LDNMOS pipes 45 and 52 are in order to embedding
The firmly collector potential of transistor 51.Three above-mentioned devices are for ensureing that circuit being capable of normal work under high pressure.
Final electric current is exported by current mirror 11 and 12.Can be compatible follow-up very well using NPN pipe output currents purpose
Circuit.Resistance 14 is to eliminate the error that transistor base current is brought simultaneously.
Circuit 14 in Fig. 1 is secondary source voltage generation circuit.The voltage can give the small module of some current needs to supply
Electricity.Before circuit is not actuated, LDPMOS pipes 15 are not opened, and VIN_REG value is the source and drain for the depletion type NMOS tube 17 do not opened
The impedance of resistance and VIN_REG underlying circuits carries out partial pressure to supply voltage.
Depletion type NMOS tube 17 is relative to underlying circuit impedance very little, so before activation, if supply voltage is smaller,
VIN_REG is approximately equal to supply voltage, when supply voltage is larger, due to diode pressure stabilization function and diode connected mode
The clamped effect of transistor, VIN_REG is the reverse burning voltage of diode plus a base emitter voltage.Work as startup
Afterwards, VIN_REG perseverances are the reverse burning voltage of diode plus a base emitter voltage.Because voltage-regulator diode is steady
The temperature coefficient of voltage is determined for just, in order that its temperature coefficient is more excellent, the diode connected mode of connecting on this basis
Bipolar transistor.Somewhat improve VIN_REG temperature coefficient with VBE negative temperature coefficient
Described above, only presently preferred embodiments of the present invention, not makes any formal limit to the present invention
System.Those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the disclosure above method and
Technology contents make many possible variations and modification to technical solution of the present invention, or are revised as the equivalence enforcement of equivalent variations
Example.Therefore, every content without departing from technical solution of the present invention, the technical spirit according to the present invention is to made for any of the above embodiments
Any modification, equivalent variations and modification, in the range of still falling within technical solution of the present invention protection.
Claims (6)
1. a kind of low-power consumption has the high-voltage starting circuit of undervoltage lookout function concurrently, it is characterised in that include：Enable/under-voltage locking
Circuit, high pressure resistant PTAT current generation circuit, secondary source voltage generation circuit；
Enable/the undervoltage lockout circuit includes input voltage modular converter, high voltage bearing reference comparator, cross-couplings
MOS and diode connection MOS active loads in parallel, produce sluggish reference bias current source；
The high pressure resistant PTAT current generation circuit is inputted including under-voltage locking logic, PTAT current generation circuit, current mirror electricity
Road；Final electric current is exported by NPN pipes, it is therefore an objective to good compatible result can be played with subsequent conditioning circuit；
The secondary source voltage generation circuit is biased by high pressure resistant PTAT current generation circuit, and tie point is in metal-oxide-semiconductor 16
Grid end on produce bias voltage, and bias branch road where the second branch road, i.e. output voltage, it is therefore an objective to so that output voltage institute
It will not change in branch current with supply voltage；Final output voltage is brilliant by the burning voltage and bipolarity of a voltage-regulator diode
Body pipe base emitter step voltage is constituted.
2. low-power consumption according to claim 1 has the high-voltage starting circuit of undervoltage lookout function concurrently, it is characterised in that described
Enable/undervoltage lockout circuit includes five resistance, four NPN, six pressure-resistant PNP, two PMOS, three depletion type NMOS, one
Individual NJFET；The one end of resistance 3 connects input EN, other end connection NJEFT leakages；
NJFET grid connection ground, source connects the leakage of PMOS 27；PMOS 27 and PMOS 28 are in diode connected mode, and
And both bodies connect the source of PMOS 27；The source of the leakage connection PMOS 28 of PMOS 27, the leakage connection ground of PMOS 28；
The first end of resistance 26 connects the leakage of PMOS 27, the second end connection NPN32 base stages；NPN32 emitting stages connection resistance 31 the
One end, the source of colelctor electrode connection depletion type NMOS tube 34；The end of resistance 31 second connects the first end of resistance 30, and the end of resistance 30 second connects
Ground connection；PNP29 emitting stages connect the first end of resistance 30, colelctor electrode connection ground, base stage connection NPN32 base stages；NPN33 base stages are connected
NPN32 base stages, the emitting stage connection first end of resistance 30, the source of colelctor electrode connection depletion type NMOS tube 35；Depletion type NMOS tube 34,
35 bodies all connect respective source, and both grid ends all connect NJFET source, and both leakages are connected to node 6B and 6A；
The emitting stage of PNP36,37,38 and 39 all connects power supply；PNP36,37 colelctor electrodes and PNP36,38 base stage are all connected in section
Point 6B, PNP38,39 colelctor electrode and PNP37,39 base stage are all connected in node 6A；
PNP40 base stage connecting node 6B, emitting stage connection power supply, colelctor electrode connects the first end of resistance 21；The of resistance 21
Two ends connect NPN22 colelctor electrode；NPN22 is in diode connected mode, its emitting stage connection ground；NPN24 base stages connect NPN22
Base stage, emitter stage connection ground, the source of colelctor electrode connection depletion type NMOS tube 23；The body of depletion type NMOS tube 23 connects its source,
Grid connect NJFET source, leakage connection NJFET leakage.
3. low-power consumption according to claim 2 has the high-voltage starting circuit of undervoltage lookout function concurrently, it is characterised in that described
Resistance 21 in enable/undervoltage lockout circuit has positive temperature coefficient.
4. low-power consumption according to claim 2 has the high-voltage starting circuit of undervoltage lookout function concurrently, it is characterised in that described
NPN22 and NPN24 emitter areas ratio in enable/undervoltage lockout circuit is 5:1.
5. low-power consumption according to claim 1 has the high-voltage starting circuit of undervoltage lookout function concurrently, it is characterised in that described
High pressure resistant PTAT current generation circuit includes four pressure-resistant PNP, four resistance, eight NPN, four LDPMOS and two
LDNMOS；PNP40 base stage connecting node 6B, emitter stage connection power supply, colelctor electrode connection NPN41 colelctor electrodes；NPN41 base stages connect
The first end of connecting resistance 56；
PNP43,44 base stage connecting node 6A, emitter stage are all connected with power supply, colelctor electrode connect respectively LDNMOS pipes 45 leakage and
NPN48 colelctor electrode；LDNMOS pipes 45 are in diode connected mode, its body connection source, source connection NPN47 colelctor electrode；
NPN47,48 base stages connect together, and connect NPN48 colelctor electrode, and both emitter stages connect the first end of resistance 49,50 respectively；
The second end connection ground of resistance 49,50；NPN42 base stages connect NPN41 colelctor electrode, its emitter stage connection ground, colelctor electrode connection
NPN47 colelctor electrode；NPN51 base stages connect NPN47 colelctor electrode, the emitter stage connection first end of resistance 50, colelctor electrode connection
The source of LDNMOS pipes 52；The body of LDNMOS pipes 52 connects its source, and it leaks connecting node 9A；The source of LDPMOS pipes 53,54,55,58
All connect power supply, 53 grid, leakage and 54,55,58 grid all connecting node 9A；The first of the leakage connection resistance 50 of LDPMOS pipes 54
End；
The first end of the leakage connection resistance 56 of LDPMOS pipes 55；The second end connection PNP57 of resistance 56；PNP57 connects in diode
Mode is connect, its colelctor electrode connection ground；The leakage connection NPN11 of LDPMOS pipes 58 colelctor electrode；NPN11 emitter stage connection ground, base
Pole connects the first end of resistance 14；The end of resistance 14 second connects NPN11 colelctor electrode；NPN13 colelctor electrode connection resistance 14 second
End, base stage connects NPN41 colelctor electrode, emitter stage connection ground；NPN12 base stages connect the second end of resistance 14, emitter stage connection
Ground, colelctor electrode connection current output terminal.
6. low-power consumption according to claim 1 has the high-voltage starting circuit of undervoltage lookout function concurrently, it is characterised in that described
Secondary source voltage generation circuit includes a LDPMOS, two depletion types NMOS, a NPN, two Schottky diodes；
The grid connecting node 9A of LDPMOS pipes 15, source connection power supply, the leakage of leakage connection depletion type NMOS tube 16；Depletion type NMOS tube 16 is in
Diode connected mode, body connection source, source connects the direction end of Schottky diode 19；The positive direction of Schottky diode 19 connects
Ground connection；The leakage connection power supply of depletion type NMOS tube 17, the grid of grid connection depletion type NMOS tube 16, body connection source, source connection output
Voltage end；NPN18 is in diode connected mode, and colelctor electrode connection output voltage terminal, emitter stage connects Schottky diode 20
Direction end；The positive direction end connection ground of Schottky diode 20.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710416349.7A CN107066022A (en) | 2017-06-06 | 2017-06-06 | A kind of low-power consumption has the high-voltage starting circuit of undervoltage lookout function concurrently |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710416349.7A CN107066022A (en) | 2017-06-06 | 2017-06-06 | A kind of low-power consumption has the high-voltage starting circuit of undervoltage lookout function concurrently |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107450650A (en) * | 2017-09-26 | 2017-12-08 | 深圳硅山技术有限公司 | A kind of electrification reset applied to digit chip I/O port pins down circuit |
| CN109613328A (en) * | 2019-01-14 | 2019-04-12 | 电子科技大学 | A kind of quick over-current detection circuit of cross-coupling |
| CN115308480A (en) * | 2022-07-26 | 2022-11-08 | 骏盈半导体(上海)有限公司 | Under-voltage detection circuit for preventing floating state |
| CN116137524A (en) * | 2023-04-04 | 2023-05-19 | 荣湃半导体（上海）有限公司 | Comparator with high voltage input resistance |
-
2017
- 2017-06-06 CN CN201710416349.7A patent/CN107066022A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107450650A (en) * | 2017-09-26 | 2017-12-08 | 深圳硅山技术有限公司 | A kind of electrification reset applied to digit chip I/O port pins down circuit |
| CN107450650B (en) * | 2017-09-26 | 2019-03-26 | 深圳硅山技术有限公司 | A kind of electrification reset containing circuit applied to digit chip I/O port |
| CN109613328A (en) * | 2019-01-14 | 2019-04-12 | 电子科技大学 | A kind of quick over-current detection circuit of cross-coupling |
| CN109613328B (en) * | 2019-01-14 | 2020-11-27 | 电子科技大学 | Cross-coupling rapid overcurrent detection circuit |
| CN115308480A (en) * | 2022-07-26 | 2022-11-08 | 骏盈半导体(上海)有限公司 | Under-voltage detection circuit for preventing floating state |
| CN116137524A (en) * | 2023-04-04 | 2023-05-19 | 荣湃半导体（上海）有限公司 | Comparator with high voltage input resistance |
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Application publication date: 20170818 |