CN107065384A - A kind of stealthy cape of controllable two-dimension optical based on multilayer chalcogenide - Google Patents
A kind of stealthy cape of controllable two-dimension optical based on multilayer chalcogenide Download PDFInfo
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- CN107065384A CN107065384A CN201710062114.2A CN201710062114A CN107065384A CN 107065384 A CN107065384 A CN 107065384A CN 201710062114 A CN201710062114 A CN 201710062114A CN 107065384 A CN107065384 A CN 107065384A
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- chalcogenide
- layer
- controllable
- cape
- circular
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
-
- A—HUMAN NECESSITIES
- A41—WEARING APPAREL
- A41D—OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
- A41D3/00—Overgarments
- A41D3/08—Capes
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Textile Engineering (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention provides a kind of stealthy cape of controllable two-dimension optical based on multilayer chalcogenide.The stealthy cape of controllable Two-Dimensional Heat is using x y horizontal planes centers as axle by chalcogenide circular layer, in x, successively continuation is formed in y-axis direction, by the crystallization degree for controlling chalcogenide in different circular layers, the different dielectric constant of every layer of correspondence and magnetic conductance rate coefficient can be made, two-dimentional dielectric constant and the distribution of magnetic conductance rate coefficient needed for acquisition optic camouflage, and then light is bypassed behind cape region, light field recovers original distribution, realize optic camouflage function, ambient interference is masked to be in the object at optic camouflage cape center, extraneous optical field distribution is not influenceed simultaneously.Meanwhile, by the anti-crystallization process of crystallization of chalcogenide in each circular layer of loop control, the real-time ON/OFF performance of optic camouflage cape is realized, so as to overcome the shortcoming that the stealthy cape of two-dimension optical is unable to cycling switch.
Description
Technical field
The present invention relates to a kind of implementation method of the stealthy cape of controllable two-dimension optical based on multilayer chalcogenide and
Device, can be applied to light field control field.
Background technology
, document 1 in 2006：“J.B.Pendry et al,SCIENCE,2006(312):1780 " propose using different first
The direction of propagation of light wave can be manipulated to medium, optic camouflage clothing concept is realized, the extensive concern of people is caused, as optics
The study hotspot in field.The same year, document 2：“D.Schurig et al,SCIENCE,2006(314):977 " microwave section first
The stealthy capes of the two-dimentional Meta Materials of experimental verification H mode., document 3 in 2007：“Cai et al,Nature Photonics,
2007(1):224 " propose the stealthy cape of the two-dimentional Meta Materials of transverse magnetic wave., document 4 in 2010：“Ma et al,Nature
communications,2010(1):124 ", which propose the two-dimensional array of apertures based on dielectric-slab, realizes the stealthy effect of electromagnetic wave
Really.But, the design of current two-dimension optical stealth structure does not possess tunable function (the i.e. ON/OFF work(of optic camouflage also
Can), in other words the structure of optic camouflage cape once it is determined that later its Stealth Fighter will always in the presence of be it is unalterable,
Its main cause is a lack of dielectric constant and magnetic conductance rate coefficient can be by the natural material of active real-time monitoring, and this directly governs
The further development of optic camouflage technology.Therefore need a kind of simple and practical method of design hidden to the optics of optic camouflage cape
Body function is tuned, and he has very important significance the practical application to optic camouflage cape, promotes it practical significantly
Change process.
Ge-Sb-Te alloys are most studied at present, the most ripe chalcogenide materials, are had been widely used for
In high-speed memory.Ge-Sb-Te chalcogenides have crystallization and noncrystalline two states, ambient light, heat, electricity, magnetic or
In the presence of stress, Ge-Sb-Te chalcogenides can change between crystallization and noncrystalline two states, and along with Ge-
Reversible change can also occur for the state change of Sb-Te chalcogenides, its dielectric constant and magnetic conductivity.
The present invention provides a kind of two-dimentional controllable optic camouflage cape based on multilayer chalcogenide.The two-dimentional controllable
Optic camouflage cape is that, using x-y horizontal planes center as axle, in x, y-axis direction, successively continuation is formed by chalcogenide circular layer,
By controlling the crystallization degree of chalcogenide in different circular layers, dielectric constant and magnetic conductivity that every layer of correspondence is different can be made,
Two-dimentional dielectric constant and magnetic conductivity distribution needed for acquisition optic camouflage, and then light is bypassed behind cape region, light field is recovered
Distribution originally, realizes optic camouflage function, masks ambient interference to be in the object at optic camouflage cape center, together
When do not influence extraneous optical field distribution.Meanwhile, by crystallization-anti-crystallization process of chalcogenide in each circular layer of loop control,
The real-time ON/OFF performance of optic camouflage cape is realized, so as to overcome the shortcoming that the stealthy cape of two-dimension optical can not be switched.This hair
It is bright to be based on chalcogenide crystallization-anti-crystallization principle, it can effectively save energy, the pseudo- ETL estimated time of loading of extension；In realization, use
The widely used device such as electricity, light-operated switch, significantly reduces the complexity and cost of optic camouflage cape, practical application potentiality
Greatly.Using the technology of the present invention, optic camouflage cape can be made to be closed (i.e. not stealthy) in most of time, made pair
Side detects some non-productive optical information, and stealthy function is opened when needing and allows other side's detection less than its optical signalling,
Various important informations are effectively hidden, enemy is benumbed, us is taken action has emergentness.The technology realize light illusion, confuse it is red
Outer fluorescence detector and in the optic camouflage equipment such as military and civilian have huge applications be worth.
The content of the invention
The technical problems to be solved by the invention are：Overcoming the stealthy function of the stealthy cape of existing two-dimension optical, do not possess can
The shortcoming of tuning performance (being unable to the stealthy function of ON/OFF light), being realized using this common materials of chalcogenide there is provided one kind can
The new technology of regulation and control (can ON/OFF) stealthy cape of two-dimension optical so that system possesses that simple in construction, speed is fast, be easy to operation, energy
Consume the low advantage of small, real-time and cost of implementation.
Technical scheme：
A kind of stealthy cape of controllable two-dimension optical based on multilayer chalcogenide, including substrate layer, interval circular layer, sulphur
Compounds of group circular layer, thin metal layer paster, control unit and the supply unit for investing chalcogenide circular layer bottom；
The stealthy cape of controllable two-dimension optical by chalcogenide circular layer using x-y horizontal planes center as axle, in x, y-axis
Successively continuation is formed in direction, each equal metal clad thin layer paster in chalcogenide circular layer bottom, each chalcogenide circular layer
Between have interval circular layer isolation；
Substrate layer is in below two-dimentional multilayer chalcogenide circular layer, for carrying two-dimentional multilayer chalcogenide circular layer,
The target being hidden is placed in the center of two-dimentional multilayer chalcogenide circular layer；
Substrate layer is contacted with thin metal layer paster, while substrate layer is small corresponding to being drilled with each thin metal layer paster
Hole, small aperture is that 1 μm~1cm, depth are 1cm~100cm；Conducting wire in aperture, wire one end is connected to thin metal layer
On paster, the other end sequentially passes through control unit and supply unit ground connection, and by manipulating control unit, regulation and control supply unit is to every
The heat time of layer chalcogenide, and then the crystallization degree of chalcogenide in different circular layers is controlled, make every layer of sulfur family chemical combination
The different dielectric constants and magnetic conductance rate coefficient of thing circular layer correspondence, realize the two-dimentional dielectric constant needed for optic camouflage and magnetic conductivity system
Number distribution, and then light is bypassed behind two-dimentional cape region, light field recovers original distribution, realizes optic camouflage function.
Described chalcogenide circular layer is shaped as annulus, elliptical ring, square ring, straight-flanked ring or six side rings, each sulphur
Compounds of group circular layer can independent control and work；Described chalcogenide circular layer is GeTe, Ge2Sb2Te5、Ge1Sb2Te4、
Ge2Sb2Te4、Ge3Sb4Te8、Ge15Sb85Or Ag5In6Sb59Te30, its width is that 1 μm~10cm, thickness are 20nm~10cm；
Described thin metal layer paster is Al pieces, Ag pieces, Au pieces, Cu pieces or Ni pieces, and its width is 1 μm~10cm, thickness
For 20nm~10cm.
Described interval circular layer is calcium silicates, polyalcohol/polyisocyanates, RPUF, polystyrene
Foamed plastics, foam glass, In2O3、SnO2Or ITO, its width is that 1 μm~10cm, thickness are 20nm~10cm.
The material of described substrate layer is polyimides, plastics, BK7 optical glass, SiO2、Si3N4Or Al2O3。
Described control unit is automatically controlled, light-operated, acoustic control or magnetic switch；Described supply unit is electric energy, heat energy, light
Energy or nuclear energy.
Described multilayer chalcogenide structure is realized by Material growth technique, including electron beam evaporation, metal are organic
Compound chemical gaseous phase deposition, vapor phase epitaxial growth and molecular beam epitaxial method.
Beneficial effects of the present invention：The present invention is based on chalcogenide crystallization-anti-crystallization principle, can effectively save energy
Amount, the pseudo- ETL estimated time of loading of extension；In realization, using the widely used device such as electricity, light-operated switch, optic camouflage bucket is significantly reduced
The complexity and cost of paulin, practical application potentiality are big.The technology is realizing light illusion, is confusing infrared optics detector and in army
There is huge applications value in thing and the optic camouflage equipment such as civilian.
The present invention provides a kind of stealthy cape of controllable two-dimension optical based on multilayer chalcogenide, can be by additional
Electricity, heat, light or magnetic field are realized to the dielectric constant and magnetic conductivity distribution that change chalcogenide this common materials there is provided one kind
The new technology of controllable (can ON/OFF) stealthy cape of two-dimension optical so that system possesses that simple in construction, speed is fast, be easy to operation,
Energy consumption is small, real-time and the low advantage of cost of implementation.
Brief description of the drawings
Fig. 1 (a) is based on the two-dimentional controllable optic camouflage bucket of N layers of (N >=1) chalcogenide for one kind that the present invention is provided
Paulin sectional drawing.
Fig. 1 (b) is based on the two-dimentional controllable optic camouflage bucket of N layers of (N >=1) chalcogenide for one kind that the present invention is provided
Paulin top view.
Fig. 2 (a) is N layers of (N >=1) chalcogenide circular layer schematic diagram.
Fig. 2 (b) is two-dimentional controllable optic camouflage cape schematic diagram.
Fig. 3 (a) is based on the two-dimentional controllable optic camouflage bucket of N layers of (N >=1) chalcogenide for one kind that the present invention is provided
Paulin opens up the optical field distribution situation under state in optic camouflage function.
Fig. 3 (b) is based on the two-dimentional controllable optic camouflage bucket of N layers of (N >=1) chalcogenide for one kind that the present invention is provided
Optical field distribution situation of the paulin under optic camouflage function closed mode.
In figure：1 substrate layer；2N layers of (N >=1) chalcogenide circular layer；3 chalcogenide circular layers；
4 interval circular layers；5 apertures；6 wires；7 control units；8 supply units；9 ground wires；
10 metal levels.
Embodiment
To cause the content of technical scheme to become apparent from, this is described in detail below in conjunction with technical scheme and accompanying drawing
The embodiment of invention.Material growth technology therein includes：Electron beam evaporation, metallo-organic compound chemical vapor deposition
The common technologies such as shallow lake, vapor phase epitaxial growth, and molecular beam epitaxy technique.Mask process therein includes electron beam exposure and focusing
The common technologies such as ion beam exposure.Etching technics therein includes wet etching and dry etching, and such as acid system etching, electron beam are carved
The conventional process such as erosion, focused-ion-beam lithography and reactive ion beam etching (RIBE).
Embodiment 1
First, by Material growth technique and mask process, designed two-dimentional chalcogenide circular layer is prepared in lining
The upper surface at bottom 1, i.e., by axle of x-y horizontal planes center, in x, y-axis direction, successively continuation is formed from the inside to the outside, realizes N layers of (N
Shown in >=1) chalcogenide circular layer, such as accompanying drawing 2 (a).
Wherein, the design of chalcogenide circular layer can use finite time-domain calculus of finite differences, FInite Element scheduling algorithm.Metal foil
Layer paster 10 is formed between the bottom of N layers of (N >=1) chalcogenide circular layer 2 and the top of substrate 1 by coating process.
Substrate corresponds at each thin metal layer paster 10, is all drilled with aperture 5.Conducting wire 6 in aperture, wire one end connects
It is connected on thin metal layer paster 10, the other end passes through control unit 7 and the ground wire 9 of supply unit 8, by manipulating control unit 7,
The heat time of 8 pairs of every layer of chalcogenide circular layers of supply unit can be regulated and controled, and then control chalcogenide in different circular layers
Crystallization degree, the dielectric constants and magnetic conductance rate coefficient that every layer of chalcogenide circular layer correspondence can be made different realize stealthy institute
Two-dimentional dielectric constant and magnetic conductance the rate coefficient distribution needed, and then light is bypassed behind cape region, light field recovers original distribution,
Realize optic camouflage function.A kind of stealthy cape of controllable two-dimension optical based on multilayer chalcogenide is finally realized, it is such as attached
Shown in Fig. 2 (b).
As shown in figure 3, when the chalcogenide in a kind of stealthy cape of controllable two-dimension optical based on multilayer chalcogenide
Compound generating state changes, and its dielectric constant and the distribution of magnetic conductance rate coefficient can also change, and then realize optical propagation direction
Regulation and control, including open optic camouflage function：The object for being as in optic camouflage cape center masks extraneous light field interference, together
When do not influence extraneous optical field distribution, not by the external world detect, i.e., light is not by changing its field distribution (such as Fig. 3 after the stealthy cape
(a) shown in)；Close optic camouflage function：I.e. light is changed by its optical field distribution after the optic camouflage cape, causes optics
The object put at stealthy cape center can be detected (shown in such as Fig. 3 (b)) by the external world.
Described above is the technical principle and instantiation that the present invention is applied, the equivalent change that the conception according to the present invention is done
Change, if its scheme for being used still covered without departing from specification and drawings spirit when, all should within the scope of the invention,
Illustrate hereby.
Claims (10)
1. a kind of stealthy cape of controllable two-dimension optical based on multilayer chalcogenide, it is characterised in that controllable two dimension
Optic camouflage cape includes substrate layer, interval circular layer, chalcogenide circular layer, the metal foil for investing chalcogenide circular layer bottom
Layer paster, control unit and supply unit；
The stealthy cape of controllable two-dimension optical by chalcogenide circular layer using x-y horizontal planes center as axle, in x, y-axis direction
Successively continuation is formed, each equal metal clad thin layer paster in chalcogenide circular layer bottom, between each chalcogenide circular layer
There is interval circular layer isolation；
Substrate layer is in below two-dimentional multilayer chalcogenide circular layer, hidden for carrying two-dimentional multilayer chalcogenide circular layer
The target of Tibetan is placed in the center of two-dimentional multilayer chalcogenide circular layer；
Substrate layer is contacted with thin metal layer paster, while substrate layer, which corresponds at each thin metal layer paster, is drilled with aperture, it is small
Hole aperture is that 1 μm~1cm, depth are 1cm~100cm；Conducting wire in aperture, wire one end is connected to thin metal layer paster
On, the other end sequentially passes through control unit and supply unit ground connection, and by manipulating control unit, regulation and control supply unit is to every layer of sulphur
The heat time of compounds of group, and then the crystallization degree of chalcogenide in different circular layers is controlled, make every layer of chalcogenide ring
Layer correspondence different dielectric constant and magnetic conductance rate coefficient, realize the two-dimentional dielectric constant and magnetic conductance rate coefficient point needed for optic camouflage
Cloth, and then light is bypassed behind two-dimentional cape region, light field recovers original distribution, realizes optic camouflage function.
2. the stealthy cape of controllable two-dimension optical according to claim 1, it is characterised in that described chalcogenide ring
Layer is shaped as annulus, elliptical ring, square ring, straight-flanked ring or six side rings, and each chalcogenide circular layer can independent control and work
Make；Described chalcogenide circular layer is GeTe, Ge2Sb2Te5、Ge1Sb2Te4、Ge2Sb2Te4、Ge3Sb4Te8、Ge15Sb85Or
Ag5In6Sb59Te30, its width is that 1 μm~10cm, thickness are 20nm~10cm.
3. the stealthy cape of controllable two-dimension optical according to claim 1 or 2, it is characterised in that described thin metal layer
Paster is Al pieces, Ag pieces, Au pieces, Cu pieces or Ni pieces, and its width is that 1 μm~10cm, thickness are 20nm~10cm.
4. the stealthy cape of controllable two-dimension optical according to claim 1 or 2, it is characterised in that described interval circular layer
It is calcium silicates, polyalcohol/polyisocyanates, RPUF, polystyrene foam plastics, foam glass, In2O3、
SnO2Or ITO, its width is that 1 μm~10cm, thickness are 20nm~10cm.
5. the stealthy cape of controllable two-dimension optical according to claim 3, it is characterised in that described interval circular layer is silicon
Sour calcium, polyalcohol/polyisocyanates, RPUF, polystyrene foam plastics, foam glass, In2O3、SnO2
Or ITO, its width is that 1 μm~10cm, thickness are 20nm~10cm.
6. the stealthy cape of controllable two-dimension optical according to claim 1,2 or 5, it is characterised in that described substrate layer
Material be polyimides, plastics, BK7 optical glass, SiO2、Si3N4Or Al2O3。
7. the stealthy cape of controllable two-dimension optical according to claim 3, it is characterised in that the material of described substrate layer
For polyimides, plastics, BK7 optical glass, SiO2、Si3N4Or Al2O3。
8. the stealthy cape of controllable two-dimension optical according to claim 4, it is characterised in that the material of described substrate layer
For polyimides, plastics, BK7 optical glass, SiO2、Si3N4Or Al2O3。
9. the stealthy cape of controllable two-dimension optical according to claim 1,2,5,7 or 8, it is characterised in that described control
Unit processed is automatically controlled, light-operated, acoustic control or magnetic switch；Described supply unit is electric energy, heat energy, luminous energy or nuclear energy.
10. the stealthy cape of controllable two-dimension optical according to claim 1,2,5,7 or 8, it is characterised in that described is more
Layer chalcogenide circular layer is realized by Material growth technique, including electron beam evaporation, metallo-organic compound chemical vapor deposition
Shallow lake, vapor phase epitaxial growth and molecular beam epitaxial method.
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| CN201710062114.2A CN107065384A (en) | 2017-01-31 | 2017-01-31 | A kind of stealthy cape of controllable two-dimension optical based on multilayer chalcogenide |
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| CN201710062114.2A CN107065384A (en) | 2017-01-31 | 2017-01-31 | A kind of stealthy cape of controllable two-dimension optical based on multilayer chalcogenide |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080024792A1 (en) * | 2006-07-25 | 2008-01-31 | John Pendry | Electromagnetic Cloaking Method |
| US20110085229A1 (en) * | 2009-10-13 | 2011-04-14 | Kent State University | Methods and Apparatus for Controlling Dispersions of Nanoparticles |
-
2017
- 2017-01-31 CN CN201710062114.2A patent/CN107065384A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080024792A1 (en) * | 2006-07-25 | 2008-01-31 | John Pendry | Electromagnetic Cloaking Method |
| US20110085229A1 (en) * | 2009-10-13 | 2011-04-14 | Kent State University | Methods and Apparatus for Controlling Dispersions of Nanoparticles |
Non-Patent Citations (4)
| Title |
|---|
| ALI MIRZAEI: "All-Dielectric Multilayer Cylindrical Structures for Invisibility Cloaking", 《SCIENTIFIC REPORTS》 * |
| KOPPÁNY KÖRMÖCZI: "Near-Infrared Invisibility Cloak Engineered With Two-Phase Metal-Dielectric Composites", 《IEEE TRANSACTIONS ON MAGNETICS》 * |
| PEINING LI: "A frequency-tunable cloak with semiconducting constituents", 《JOURNAL OF PHYSICS D: APPLIED PHYSICS》 * |
| RUNREN ZHANG ET AL: "Free-space carpet cloak using transformation optics and graphene", 《OPTICS LETTERS》 * |
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Application publication date: 20170818 |