CN107055544B - The silicon core structure of polycrystalline silicon reducing furnace - Google Patents
The silicon core structure of polycrystalline silicon reducing furnace Download PDFInfo
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- CN107055544B CN107055544B CN201710285198.6A CN201710285198A CN107055544B CN 107055544 B CN107055544 B CN 107055544B CN 201710285198 A CN201710285198 A CN 201710285198A CN 107055544 B CN107055544 B CN 107055544B
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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Abstract
A kind of silicon core structure of polycrystalline silicon reducing furnace comprising the first silicon core, the second silicon core and the crossbeam for overlapping the first silicon core and the second silicon core.One of first silicon core, the second silicon core and crossbeam are at least a part of to be made for graphite material.A kind of silicon core structure of polycrystalline silicon reducing furnace comprising the first silicon core, the second silicon core and the crossbeam for overlapping the first silicon core and the second silicon core.First silicon core includes the graphite portion that crystal silicon portion is connect with crystal silicon portion.The silicon core structure of polycrystalline silicon reducing furnace of the invention, has at least partly selected graphite material in silicon core material, and material cost and processing cost are all lower.
Description
Technical field
The present invention relates to structures on a kind of silicon core, more particularly, to the silicon in polycrystalline silicon reducing furnace in a kind of production of polysilicon
Cored structure.
Background technique
It is domestic when producing polysilicon using reduction furnace at present, it generallys use graphite collet and clamps silicon core.Silicon core is to draw
Made of monocrystalline silicon slim rod.Silicon core is placed in reduction furnace, after being passed through unstrpped gas, carries out reduction reaction in reduction furnace, on silicon core
Will constantly deposit polycrystalline silicon and constantly thickening, finally become polycrystalline silicon rod.Polysilicon rod passes through as subsequent raw material
It is a series of to be processed into solar panel.
But the silicon core of current single crystal silicon material, processing procedure is complex, needs using polycrystalline silicon material in single crystal growing furnace
It draws, higher cost.
Summary of the invention
In order to solve the above technical problems, the present invention is intended to provide a kind of silicon core knot of the lower polycrystalline silicon reducing furnace of cost
Structure.
The present invention includes following content:
A kind of silicon core structure of polycrystalline silicon reducing furnace comprising the first silicon core, the second silicon core and the first silicon core of overlap joint and the
The crossbeam of two silicon cores.One of first silicon core, the second silicon core and crossbeam are at least a part of to be made for graphite material.
A kind of silicon core structure of polycrystalline silicon reducing furnace comprising the first silicon core, the second silicon core and the first silicon core of overlap joint and the
The crossbeam of two silicon cores.First silicon core includes the graphite portion that crystal silicon portion is connect with crystal silicon portion.
The silicon core structure of polycrystalline silicon reducing furnace of the invention has at least partly selected graphite material, material in silicon core material
Expect that cost and processing cost are all lower.
Detailed description of the invention
Fig. 1 is the schematic diagram of the silicon core structure of one polycrystalline silicon reducing furnace of embodiment of the present invention.
Fig. 2 is the schematic diagram of the silicon core structure of two polycrystalline silicon reducing furnace of embodiment of the present invention.
Fig. 3 is the schematic diagram of the silicon core structure of three polycrystalline silicon reducing furnace of embodiment of the present invention.
Fig. 4 is the crossbeam schematic diagram of the silicon core structure of four polycrystalline silicon reducing furnace of embodiment of the present invention.
Specific embodiment
To be best understood from technical solutions according to the invention, it is further described now in conjunction with attached drawing.
The silicon core structure of the polycrystalline silicon reducing furnace of embodiment of the present invention one includes the first clamp assemblies 10, the first silicon core
12, the second clamp assemblies 14, the second silicon core 16 and crossbeam 18.Wherein, the first clamp assemblies 10 clamp the first silicon core 12, the second folder
It holds component 10 and clamps the second silicon core 16, so that the first silicon core 12 and the vertical arranged adjacent of the second silicon core 16, and 12 He of the first silicon core
Second silicon core 16 is parallel to each other.18 transverse lap of crossbeam is at 16 top of the top of the first silicon core 12 and the second silicon core, crossbeam 18 and the
One silicon core 12 and the second silicon core 16 form frame-shaped construction.In present embodiment, the first clamp assemblies 10 and the second clamp assemblies 14
It is graphite clamping petal structure.In present embodiment, crossbeam 18 and the first silicon core 12 and the second silicon core 16 are graphite material production.
Graphite because material inexpensively, and graphite material processing it is more convenient, made with can be convenient using machining
Various standard shapes are made, can guarantee dimensional accuracy, and then guarantee the verticality after the installation of silicon core, are not easy in use
Stick, cost is relatively low, silicon core yield is higher and production is safer.
In use process, the silicon core structure of polycrystalline silicon reducing furnace is placed in reduction furnace, the first clamp assemblies 10 and second
Clamp assemblies 14 are connected with electrode and connection circuit, and reduction furnace is passed through unstrpped gas, reduction reaction is carried out in reduction furnace,
Continuous deposit polycrystalline silicon generates polysilicon rod on first silicon core 12, the second silicon core 16 and crossbeam 18.It is grown to polysilicon rod
It is taken out after completing and enters subsequent processing.
Since the electric conductivity of graphite material is preferable, present embodiment in use, needs suitably to adjust electrode
Voltage, the electric current and heating temperature of the first silicon core 12 of control, the second silicon core 16 and crossbeam 18 are suitble to polysilicon deposition growth.
It is appreciated that the second silicon core 16 and/or crossbeam 18 in present embodiment can also also use single crystal silicon material, the
One silicon core 12 still uses graphite material, can also prepare polysilicon rod.
Fig. 2 is referred to, the silicon core structure of the polycrystalline silicon reducing furnace of embodiment of the present invention two is similar with embodiment one,
Difference is, the first silicon core 22 and the second silicon core 26 are the composite structures of monocrystalline silicon and graphite.First silicon core 22 includes crystal silicon portion
221 and graphite portion 223, wherein crystal silicon portion 221 is single crystal silicon material production, and graphite portion 223 is that graphite material makes, crystal silicon portion
221 and graphite portion 223 be it is rectangular, the one end in crystal silicon portion 221 is inserted terminal 2211, and inserted terminal 2211 is in taper type.Accordingly,
The one end in graphite portion 223 is installation end 2231, and installation end 2231 is cone machine hole corresponding with 2211 shape of inserted terminal.Crystal silicon portion
221 other ends far from inserted terminal 2211 are mounted on the first clamp assemblies 20, then the inserted terminal 2211 and stone in crystal silicon portion 221
The installation end 2231 in black portion 223 cooperates, and graphite portion 223 is mounted in crystal silicon portion 221.
Second silicon core 26 is identical as 22 structure of the first silicon core, also includes crystal silicon portion 261 and graphite portion 263, wherein crystal silicon portion
261 be single crystal silicon material production, and graphite portion 263 is graphite material production, and crystal silicon portion 261 and graphite portion 263 are rectangular, crystal silicon
The one end in portion 261 is inserted terminal 2611, and inserted terminal 2611 is in taper type.Accordingly, the one end in graphite portion 263 is installation end
2631, installation end 2631 is cone machine hole corresponding with 2611 shape of inserted terminal.The other end of the crystal silicon portion 261 far from inserted terminal 2611
It is mounted on the second clamp assemblies 24, then the inserted terminal 2611 in crystal silicon portion 261 and the installation end 2631 in graphite portion 263 cooperate,
Graphite portion 263 is mounted in crystal silicon portion 261.
First silicon core 22 and 26 neighboring vertical of the second silicon core are mounted in reduction furnace, and 28 one end of crossbeam is mounted on the first silicon core
In 22 graphite portion 223, other end is fixedly mounted in the graphite portion 263 of the second silicon core 26, with this with the first silicon core 22 and
Second silicon core 26 is fixed together.When work, the silicon core structure of the polycrystalline silicon reducing furnace of present embodiment is placed in reduction furnace,
Because monocrystalline silicon and graphite material are electrically conductive, the first silicon core 22, crossbeam 28 and the second silicon core 26 have electric current to pass through.?
On one silicon core 22, due to crystal silicon portion 221 and 223 resistivity of the graphite portion difference of the first silicon core 22,221 resistance of crystal silicon portion is larger,
Temperature is higher, after unstrpped gas is passed through reduction furnace, it will deposition and quick thickening are first begin in crystal silicon portion 221.Crystal silicon
The heat in portion 221 is conducted to graphite portion 223, in addition the fever in graphite portion 223 itself, it also can gradually deposition growing increase therewith.
Equally, also there is identical process on the second silicon core 26.Meanwhile also there is polysilicon deposition on crossbeam 28 and increasing.
The silicon core structure of the polycrystalline silicon reducing furnace of embodiment two uses the graft structure of crystal silicon and graphite, can equally drop
Low silicon core cost, and in process of production, then the silicon core of part crystal silicon material can be conducted to graphite material with fast heating
Silicon core segment, can be in the case where reducing silicon core cost, while accelerating the silicon rod speed of growth.
Fig. 3 is referred to, the silicon core structure of the polycrystalline silicon reducing furnace of embodiment of the present invention three is similar to embodiment two,
Difference is that the first silicon core 32 includes multiple crystal silicon portions 321 and multiple graphite portions 323, and crystal silicon portion 321 and graphite portion 323
Interval setting, between be installed together using chimeric.Specifically, crystal silicon portion 321 is installed close to one end of the first clamp assemblies 30
On the first clamp assemblies 30, other end is inserted terminal 3211, and structure is cone table.Adjacent 323 one end of graphite portion is peace
End 3231 is filled, structure is and cone machine hole, 3211 grafting of inserted terminal for crystal silicon portion 321 are installed, and 323 other end of graphite portion is slotting
End 3233 is connect, structure is cone table, it is coupled with the installation end in next adjacent crystal silicon portion 321, and so on.
First silicon core 32 of the silicon core structure of the polycrystalline silicon reducing furnace of embodiment three is using multiple crystal silicon portions 321 and multiple
The combined mode in graphite portion 323 makes silicon core, can be convenient the standard component being made as in structure during processing and manufacturing, combination is more
It is flexible.The quantity for adjusting crystal silicon portion 321 and graphite portion 323, can control the resistivity and height of the first silicon core 32, is reducing
On the basis of cost, it can increase or reduce the height of silicon rod, not limited by the length of original single single crystal silicon material silicon core
System, and then control the growth and final size of silicon rod.
It is appreciated that being not limited to crystal silicon portion 321 by what the first clamp assemblies 30 clamped, it is also possible to graphite portion 323.It is subsequent
Arrangement be also not necessarily limited to successively be intervally arranged, can also be arranged together with two or more 321 grafting of crystal silicon portion,
It is also possible to two or two graphite portions 323 is arranged together.
It is appreciated that the second silicon core in embodiment three, can also use multiple crystal silicon portions 321 and multiple graphite portions
323 combined more piece composite structures, specific structure referring to the first silicon core structure.
Fig. 4 is referred to, the silicon core structure of the polycrystalline silicon reducing furnace of embodiment four is similar with embodiment three, embodiment
Four crossbeam 48 also uses the structure of more piece combination.Crossbeam 48 includes multiple crystal silicon portions 41 and multiple graphite portions 43, crystal silicon portion
41 one end is inserted terminal 411, and other end is installation end 413.The one end in graphite portion 43 is the inserted terminal 411 with crystal silicon portion 41
The installation end 433 of adaptation, other end are inserted terminal 431.With this, multiple crystal silicon portions 41 and multiple graphite portions 43 mutually successively connect
It connects.The side at 48 both ends of crossbeam is provided with card holding trough 481, respectively the first silicon core and the installation cooperation of the second silicon core.
It is appreciated that the structure of plug division and mounting portion in above-mentioned all embodiments can be interchanged, that is to say, that insert
Socket part can be cone machine hole, and correspondingly, mounting portion is cone table.Certainly the two is also not necessarily limited to the cooperation of cone machine hole and cone table,
It can be the fit system of other forms, such as bellmouth and bullet, stepped hole and step body, square hole and square body, circle
Post holes and cylindrical body, dovetail groove and dovetail groove guide rail etc..
It is appreciated that the plug division of above-mentioned all embodiments and mounting portion also can be omitted, tungsten wire winding is directlyed adopt
The mode of binding is fixed, or the junction in crystal silicon portion and graphite portion is arranged in graphite sleeve, and the two is fixed together.
It is appreciated that the first silicon core and the second silicon core of above-mentioned all embodiments and the overlapping mode of crossbeam can also be adopted
It is fixed with modes such as grafting, bundled fixed or sockets.The mode of grafting can be cooperation, the bellmouth of cone machine hole and cone table
It is each with bullet, stepped hole and step body, square hole and square body, cylindrical hole and cylindrical body, dovetail groove and dovetail groove guide rail etc.
Kind fit system.Bundled fixed can be fixed by the way of tungsten wire binding.Socket can be covered using sleeve setting in junction
Connect fixation.
The silicon core structure of polycrystalline silicon reducing furnace of the invention, at least partly silicon core use graphite material, reduce silicon core
Cost and difficulty of processing, while original monocrystalline silicon silicon core can also be reduced, the growth of silicon rod height is limited, it can be generated
Larger-sized silicon rod reduces production cost.
In conclusion the above is merely preferred embodiments of the present invention, should not be limited the scope of the invention with this.It is i.e. all
It is that should still belong to the invention patent according to simple equivalent changes and modifications made by claims of the present invention and description
In the range of covering.
Claims (3)
1. a kind of silicon core structure of polycrystalline silicon reducing furnace comprising the first silicon core, the second silicon core and overlap joint the first silicon core and second
The crossbeam of silicon core, which is characterized in that the first silicon core and the second silicon core include crystal silicon portion and the graphite portion connecting with crystal silicon portion,
Wherein
Crystal silicon portion one end is inserted terminal, and graphite portion one end is provided with the installation end with the cooperation of crystal silicon portion inserted terminal, crystal silicon portion and stone
The quantity in black portion is multiple, multiple crystal silicon portions and the successively grafting of graphite portion, and multiple crystal silicon portions and multiple graphite portions interval are arranged.
2. the silicon core structure of polycrystalline silicon reducing furnace as described in claim 1, which is characterized in that crossbeam also include crystal silicon portion and
The graphite portion being connect with crystal silicon portion.
3. the silicon core structure of polycrystalline silicon reducing furnace as described in claim 1, which is characterized in that inserted terminal is cone table, installation
End is provided with cone machine hole.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710285198.6A CN107055544B (en) | 2017-04-27 | 2017-04-27 | The silicon core structure of polycrystalline silicon reducing furnace |
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| CN201710285198.6A CN107055544B (en) | 2017-04-27 | 2017-04-27 | The silicon core structure of polycrystalline silicon reducing furnace |
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| CN107055544A CN107055544A (en) | 2017-08-18 |
| CN107055544B true CN107055544B (en) | 2019-05-03 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109970067A (en) * | 2017-12-28 | 2019-07-05 | 内蒙古盾安光伏科技有限公司 | The silicon core structure of production of polysilicon |
| CN114636314A (en) * | 2020-12-16 | 2022-06-17 | 青海黄河上游水电开发有限责任公司新能源分公司 | Reduction furnace graphite preheater structure based on electronic-grade polycrystalline silicon production device |
| CN114751413A (en) * | 2022-05-27 | 2022-07-15 | 洛阳市自动化研究所有限公司 | Silicon core lapping structure and lapping method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103145130A (en) * | 2011-12-07 | 2013-06-12 | 刘雅铭 | Method and apparatus for increasing silicon core number in polycrystalline silicon reduction furnace |
| CN203922735U (en) * | 2014-05-27 | 2014-11-05 | 新特能源股份有限公司 | A kind of silicon core clamping device for polysilicon reduction furnace |
| CN204151079U (en) * | 2014-09-30 | 2015-02-11 | 新疆大全新能源有限公司 | Polycrystalline silicon reducing furnace |
| CN205151785U (en) * | 2015-12-01 | 2016-04-13 | 江阴东升新能源有限公司 | Polycrystalline silicon side's silicon core and overlap joint structure thereof |
| CN205472699U (en) * | 2016-01-11 | 2016-08-17 | 浙江谷高光伏科技有限公司 | Polycrystalline silicon reduction furnace |
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- 2017-04-27 CN CN201710285198.6A patent/CN107055544B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103145130A (en) * | 2011-12-07 | 2013-06-12 | 刘雅铭 | Method and apparatus for increasing silicon core number in polycrystalline silicon reduction furnace |
| CN203922735U (en) * | 2014-05-27 | 2014-11-05 | 新特能源股份有限公司 | A kind of silicon core clamping device for polysilicon reduction furnace |
| CN204151079U (en) * | 2014-09-30 | 2015-02-11 | 新疆大全新能源有限公司 | Polycrystalline silicon reducing furnace |
| CN205151785U (en) * | 2015-12-01 | 2016-04-13 | 江阴东升新能源有限公司 | Polycrystalline silicon side's silicon core and overlap joint structure thereof |
| CN205472699U (en) * | 2016-01-11 | 2016-08-17 | 浙江谷高光伏科技有限公司 | Polycrystalline silicon reduction furnace |
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