CN107039884A - A kind of active area structure and laser based on tensile strain Ge nano wires - Google Patents
A kind of active area structure and laser based on tensile strain Ge nano wires Download PDFInfo
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- CN107039884A CN107039884A CN201710304793.XA CN201710304793A CN107039884A CN 107039884 A CN107039884 A CN 107039884A CN 201710304793 A CN201710304793 A CN 201710304793A CN 107039884 A CN107039884 A CN 107039884A
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- nano wires
- tensile strain
- barrier layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Semiconductor Lasers (AREA)
Abstract
The invention provides a kind of active area structure and laser based on tensile strain Ge nano wires, the active area structure includes the first barrier layer, Ge nano wires and the second barrier layer, and the Ge nano wires are located between first barrier layer and second barrier layer.The present invention is by the way that by existing CMOS technology, mutually compatibility Ge materials are converted into direct band gap, overcome the problem of silicon is unable to direct band gap and III V race's luminescent devices and incompatible existing CMOS technology, single-chip integration is also beneficial to simultaneously, cost is reduced, promotes the benign development of optical communications industry.
Description
Technical field
The present invention relates to semiconductor electronic and photoelectron material preparation field, specifically, it is based on the present invention relates to one kind
The active area structure and laser of tensile strain Ge nano wires.
Background technology
With the high speed development of the integrated circuit based on silicon, transistor feature size constantly reduces, integrated circuit skill
Art is faced with the severe challenge of speed, power consumption etc..When traditional integrated circuit internal communication mode due to circuit and device size not
Disconnected reduce and when being limited by quantum effect, the reliability of device can be greatly reduced.And the optical interconnection skill based on silicon based photon
The combination of art and traditional integrated circuit can effectively break through this bottleneck, and then become Semiconductor Optoeletronic Materials and device neck
The one big study hotspot in domain.
It is developed so far, the opto-electronic device manufactured using silicon materials as carrier is existing a variety of, such as optical modulator, demodulation
Device, waveguide and photodetector.However, as a kind of indirect bandgap material, the luminous efficiency of silicon is extremely low, much
The basic demand as silicon substrate light source is not reached.Therefore, the research of si-based light-emitting device becomes the whole silicon based photon of solution
The important directions of middle light source problem.
At present, the method that silicon substrate light source is mainly bonded using III-V luminescent devices with silicon base, although the technology phase
To maturation, commodity production has also been put into, but this method and existing silicon base CMOS technique are incompatible, it is difficult to realize single-chip integration
Silicon substrate light source.This can greatly promote the cost of silicon-based optical interconnection, be unfavorable for sustainable sustainable development.
The content of the invention
In order to search out can direct band gap it is luminous while the opto-electronic device of compatible existing CMOS technology, the present invention is carried
For a kind of active area structure and laser based on tensile strain Ge nano wires.
It is more or less the same in view of the Γ energy valleys of the Ge as IV races semi-conducting material in itself with L energy valleys, and can be by opening
The introducing of strain come adjust can band, it is changed into direct band gap.Moreover, Ge material prices compared with III-V material more just
Preferably, cost can be reduced as active area with Ge materials.Meanwhile, the Ge nanometers in face are because axial length is much larger than other two
Direction, tensile strain amount in this direction is easily kept, and its value is about the lattice mismatch with lower layer of material.Therefore, if providing
The tensile strain enough to the twin shaft tensile strain Ge nano wires in face and dislocation is not produced, then the direct band gap of IV races material can be achieved
It is luminous, and emission wavelength can be adjusted by changing different tensile strain amounts.
The present invention provides a kind of active area structure based on tensile strain Ge nano wires, described based on tensile strain Ge nano wires
Active area structure includes the first barrier layer, Ge nano wires and the second barrier layer, and the Ge nano wires are located at first barrier layer
Between second barrier layer.
Preferably, the Ge nano wires are twin shaft tensile strain Ge nano wires in face.
Preferably, the axial length of twin shaft tensile strain Ge nano wires is at least 30 times of width in the face.
Preferably, first barrier layer and the second barrier layer be respectively in face twin shaft tensile strain Ge nano wires provide at least
Twin shaft tensile strain in 2% primary face.
Preferably, first barrier layer includes GeSn alloy, SiGeSn ternary semiconductors, iii-v binary or polynary
The one or more of compound semiconductor.
Preferably, first barrier layer is made up of GeSn.
Preferably, Sn contents are at least 13% in the GeSn.
Preferably, first barrier layer is made up of AlSb layers and the GaSb layers of epitaxial growth thereon.
Preferably, the material component of second barrier layer and first barrier layer is adapted.
The present invention also provides a kind of laser, the laser include substrate, the N-type crystal unit being grown on substrate,
Active area and the P-type crystal unit positioned at top layer, the active area are based on tensile strain Ge as described in above-mentioned any one
The active area structure of nano wire.
Compared with prior art, the present invention a kind of active area structure and laser based on tensile strain Ge nano wires has such as
Lower beneficial effect：
The present invention using can be mutually compatible with CMOS technology Ge materials formation face in Ge nano wires, it is in twin shaft tensile strain
Under, band structure some or all of can be converted into direct band gap in spatial distribution, so as to realize that direct band gap lights, significantly
Luminous efficiency is improved, overcoming silicon, to be unable to direct band gap and iii-v luminescent device incompatible with existing CMOS technology
Problem, for as light source applications in silicon substrate optical interconnection network.In addition, being changed according to the difference of the initial tensile strain amount provided
Emission wavelength, can be extended to middle-infrared band by wavelength.Structure design is simple simultaneously, workable, device manufacture difficulty
Low, light emitting region controllable is conducive to single-chip integration, reduces cost, promotes the benign development of optical communications industry.
Brief description of the drawings
Of the invention above-mentioned and/or additional aspect and advantage will become from the following description of the accompanying drawings of embodiments
Substantially and be readily appreciated that, wherein：
Fig. 1 is the schematic cross-section of the display active area structure principle of the invention based on tensile strain Ge nano wires；
Fig. 2 is the schematic top plan view of Ge nano wires and the first barrier layer in Fig. 1；
Fig. 3 is the cross section structure schematic diagram according to present example one；
Fig. 4 is the cross section structure schematic diagram according to present example two；
Fig. 5 is according to by a kind of cross section structure schematic diagram of laser of the invention.
Embodiment
The present invention is further described with reference to embodiments.
Refer to Fig. 1 and Fig. 2, the present invention provides a kind of active area structure based on tensile strain Ge nano wires, it includes the
One barrier layer 101, the barrier layer 105 of Ge nano wires 103 and second, wherein, Ge nano wires 103 are located at the first barrier layer 101 and the
Between two barrier layers 105.
In some embodiments, Ge nano wires 103 are twin shaft tensile strain Ge nano wires, the He of the first barrier layer 101 in face
Second barrier layer 105 is respectively twin shaft tensile strain in the primary face of twin shaft tensile strain Ge nano wires offer at least 2% in face.
In some embodiments, the axial length of Ge nano wires is at least 30 times of width in face.Illustratively, such as Fig. 2
The axial length L of Ge nano wires is at least 30 times of width W in shown face.
Preferably, the first barrier layer 101 include GeSn alloy (wherein, Sn contents be more than 13%), SiGeSn ternarys partly lead
The one or more of body, iii-v binary or multi-element compounds semiconductor.Second barrier layer 105 and the first barrier layer 101
Material component is adapted.
Explained later illustrates a kind of preparation method of the active area structure based on tensile strain Ge nano wires of the present invention, should manage
The material component of solution, the second barrier layer 105 and the first barrier layer 101 is adapted, therefore, herein only with the first barrier layer
It is described exemplified by 101, but its effect is answered and in the second barrier layer 105.
Embodiment one
Referring to Fig. 3, first, the complete relaxation of the first barrier layer 101 is used as in the substrate Epitaxial growth of silicon substrate 301
GeSn layers 303, wherein, the thickness of GeSn layers 303 is 1-2 μm；The component of Sn in GeSn is more than 13%；Then in GeSn layers 303
Epitaxial growth Ge quantum dots；Finally, discrete Ge quantum dots are made to pool Ge by orienting diffusion by high-temp in-situ annealing
Nano wire 305.
Thus obtain including the active area structure based on tensile strain Ge nano wires of GeSn layers 303 and Ge nano wires 305.Cause
For, when it is more than 2% that the lattice constant of barrier layer, which is more than Ge and mismatch, Ge nano wires can realize that direct band gap lights,
And in view of Ge and 13%Sn contents GeSn have 2% lattice mismatch, therefore, by embodiment one generate based on should
Becoming the active area structure of Ge nano wires can also realize that direct band gap lights.
Embodiment two
Referring to Fig. 4, the present invention can also on silicon substrate 401 successively epitaxial growth AlSb layer with GaSb layers collectively as the
One barrier layer 101, its preparation process is as follows：
First, chamfering process is carried out to silicon substrate 401, it is produced diatomic step, wherein, mis-cut angle is 2-5 °；
Then, in the Epitaxial growth AlSb layers 403 of silicon substrate 401 chamfer, the thickness of wherein AlSb layers 403 is 5-
10nm；
Then, AlSb layers 403 the complete relaxation of Epitaxial growth GaSb layers 405, wherein, the thickness of GaSb layers 405 is
200nm-2μm；
Then, in the Epitaxial growth Ge quantum dots of GaSb layers 405；
Finally, being annealed by high-temp in-situ makes discrete Ge quantum dots spread the Ge nano wires pooled in face by orienting
407。
It is thus obtained including AlSb layers 403, GaSb layers 405 and Ge nano wires 407 based on tensile strain Ge nano wires
Active area structure.Because when it is more than 2% that the lattice constant of barrier layer, which is more than Ge and mismatch, Ge nano wires can be real
Existing direct band gap lights, it is contemplated that there is 7.7% lattice mismatch to Ge and GaSb, therefore, is generated by embodiment one
Active area structure based on tensile strain Ge nano wires can also realize that direct band gap lights.
Compared with prior art, a kind of active area structure based on tensile strain Ge nano wires of the present invention has following beneficial effect
Really：
The present invention is by the way that by existing CMOS technology, mutually compatibility Ge materials are converted into direct band gap, and overcoming silicon can not be direct
The problem of band gap and iii-v luminescent device and incompatible existing CMOS technology, to be mutual in silicon substrate light as light source applications
Network of networking provides a kind of novel light-emitting device, while being also beneficial to single-chip integration, reduces cost, promotes the benign of optical communications industry
Development.The present invention changes emission wavelength by the difference according to the initial tensile strain amount provided, can be extended to wavelength
Middle-infrared band.
Referring to Fig. 5, based on the same active area structure identical inventive concept based on tensile strain Ge nano wires, this hair
Bright embodiment additionally provides a kind of laser, its N-type crystal unit 503, active area for including substrate 501, being grown on substrate
505 and the P-type crystal unit 507 positioned at top layer, wherein, active area 505 is above-mentioned having based on tensile strain Ge nano wires
Source structure.
Preferably, substrate 501 is preferably the silicon substrate for having carried out 5 ° of bevelings.
In some embodiments, N-type crystal unit 503 includes：
5032：5nm AlSb forming cores layer, the effect of the AlSb forming cores layer is the generation for avoiding threading dislocation, so as to have
Beneficial to the growth of next layer of GaSb contact layer；
5034：The GaSb contact layers of 1 μm of strongly n-type doping, its doping concentration is about 2-5 × 1018cm-3；
5036：100nm AlxGa1-xAsySb1-yGraded bedding, for by GaSb contact layers to next layer
Al0.9Ga0.1As0.07Sb0.93The energy band transition of ducting layer, be conducive to the migration of carrier.Wherein, 0<x<0.9,0<y<0.07, should
Layer is n-type doping, and its concentration is about 5 × 1017cm-3；
5038：1 μm of Al0.9Ga0.1As0.07Sb0.93Ducting layer, main function is existed only in active area for limitation laser.
The Al0.9Ga0.1As0.07Sb0.93Ducting layer adulterates for n-type, and its concentration is about 5 × 1017cm-3。
In some embodiments, active area 505 includes：
5052：20nm Al0.35Ga0.65As0.03Sb0.97Barrier layer, main function is limiting carrier in Ge nano wire layers
In be combined；
5053：30nm Al0.35Ga0.65As0.03Sb0.97Barrier layer, acts on same Al0.35Ga0.65As0.03Sb0.97Barrier layer
406。
In some embodiments, P-type crystal unit 507 includes：
5072：1 μm of Al0.9Ga0.1As0.07Sb0.93Ducting layer, acts on same Al0.9Ga0.1As0.07Sb0.93Ducting layer 405.
The layer adulterates for p-type, and its concentration is about 5 × 1017cm-3；
5074：100nm AlxGa1-xAsySb1-yGraded bedding, acts on same AlxGa1-xAsySb1-yGraded bedding 404,0<x<
0.9,0<y<0.07, the layer adulterates for p-type, and its concentration is about 5 × 1017cm-3；
5076：The GaSb contact layers of the strong p-type doping of 300nm, its doping concentration is about 3-5 × 1019cm-3。
As long as the p-type and n-shaped doped source in structure described above meet the concentration requirement of doping, doped source is not limited
Material.The present embodiment only describes a kind of structure that laser is constituted using the present invention, but is not limited only to this structure, Ren Hefa
As long as the luminescent material of optical device is made up of structure of the present invention, it can be considered that device architecture is set as derived from the present invention
Meter.
Compared with prior art, a kind of laser of the invention has the advantages that：
The present invention is by the way that by existing CMOS technology, mutually compatibility Ge materials are converted into direct band gap, and overcoming silicon can not be direct
The problem of band gap and iii-v luminescent device and incompatible existing CMOS technology, for as laser application in silicon substrate light
Internet provides a kind of novel light-emitting device, while being also beneficial to single-chip integration, reduces cost, promotes the good of optical communications industry
Sexual development.
Described above is only some embodiments of the present invention, it is noted that for the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (10)
1. a kind of active area structure based on tensile strain Ge nano wires, it is characterised in that described based on tensile strain Ge nano wires
Active area structure includes the first barrier layer, Ge nano wires and the second barrier layer, and the Ge nano wires are located at first barrier layer
Between second barrier layer.
2. the active area structure according to claim 1 based on tensile strain Ge nano wires, it is characterised in that：It is described Ge nanometers
Line is twin shaft tensile strain Ge nano wires in face.
3. a kind of active area structure based on tensile strain Ge nano wires according to claim 2, it is characterised in that：The face
The axial length of interior twin shaft tensile strain Ge nano wires is at least 30 times of width.
4. the active area structure according to claim 2 based on tensile strain Ge nano wires, it is characterised in that：First gesture
Barrier layer and the second barrier layer are respectively twin shaft tensile strain in the primary face of twin shaft tensile strain Ge nano wires offer at least 2% in face.
5. the active area structure according to claim 1 based on tensile strain Ge nano wires, it is characterised in that：First gesture
Barrier layer includes a kind of or many of GeSn alloy, SiGeSn ternary semiconductors, iii-v binary or multi-element compounds semiconductor
Kind.
6. the active area structure according to claim 5 based on tensile strain Ge nano wires, it is characterised in that：First gesture
Barrier layer is made up of GeSn.
7. twin shaft tensile strain Ge nano wires in face according to claim 6, it is characterised in that：Sn contents are extremely in the GeSn
It is 13% less.
8. the active area structure according to claim 5 based on tensile strain Ge nano wires, it is characterised in that：First gesture
Barrier layer is made up of AlSb layers and the GaSb layers of epitaxial growth thereon.
9. the active area structure according to claim 5 based on tensile strain Ge nano wires, it is characterised in that：Second gesture
Barrier layer and the material component of first barrier layer are adapted.
10. a kind of laser, it is characterised in that：The laser includes substrate, the N-type crystal unit being grown on substrate, had
Source region and the P-type crystal unit positioned at top layer, the active area is answers as described in claim 1-9 any one based on
Become the active area structure of Ge nano wires.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100442562C (en) * | 2005-08-25 | 2008-12-10 | 三星电机株式会社 | Nanowire light emitting device and manufacturing method thereof |
| CN102684068B (en) * | 2012-05-28 | 2014-04-23 | 西安交通大学 | Tunable laser based on nanowire array and preparation process thereof |
| CN104321887A (en) * | 2011-09-26 | 2015-01-28 | Glo公司 | Nanowire sized opto-electronic structure and method for manufacturing the same |
| CN104584226A (en) * | 2012-09-27 | 2015-04-29 | 英特尔公司 | Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack |
| CN106601738A (en) * | 2015-10-15 | 2017-04-26 | 上海新昇半导体科技有限公司 | Complementary field effect transistor and production method thereof |
| CN106601804A (en) * | 2015-10-15 | 2017-04-26 | 上海新昇半导体科技有限公司 | Field effect transistor and manufacturing method thereof |
-
2017
- 2017-05-03 CN CN201710304793.XA patent/CN107039884B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100442562C (en) * | 2005-08-25 | 2008-12-10 | 三星电机株式会社 | Nanowire light emitting device and manufacturing method thereof |
| CN104321887A (en) * | 2011-09-26 | 2015-01-28 | Glo公司 | Nanowire sized opto-electronic structure and method for manufacturing the same |
| CN102684068B (en) * | 2012-05-28 | 2014-04-23 | 西安交通大学 | Tunable laser based on nanowire array and preparation process thereof |
| CN104584226A (en) * | 2012-09-27 | 2015-04-29 | 英特尔公司 | Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack |
| CN106601738A (en) * | 2015-10-15 | 2017-04-26 | 上海新昇半导体科技有限公司 | Complementary field effect transistor and production method thereof |
| CN106601804A (en) * | 2015-10-15 | 2017-04-26 | 上海新昇半导体科技有限公司 | Field effect transistor and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 王亚楠: "锗基ＩｎＡｓ量子点激光器的腔面失效及再生的研究", 《光电器件》 * |
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