CN107039773A - A kind of adjustable negative exponent metamaterial structure in microwave frequency band broadband - Google Patents
A kind of adjustable negative exponent metamaterial structure in microwave frequency band broadband Download PDFInfo
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- CN107039773A CN107039773A CN201710255752.6A CN201710255752A CN107039773A CN 107039773 A CN107039773 A CN 107039773A CN 201710255752 A CN201710255752 A CN 201710255752A CN 107039773 A CN107039773 A CN 107039773A
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- metamaterial structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/004—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective using superconducting materials or magnetised substrates
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Abstract
The invention discloses a kind of adjustable negative exponent metamaterial structure in microwave frequency band broadband, including at least one the metamaterial structure unit set in lamination, the metamaterial structure unit includes ferrite chip layer（1）, Dielectric film layers（2）And metal wire structure（3）；The Dielectric film layers（2）It is arranged on ferrite chip layer（1）On, metal wire structure（3）It is arranged on Dielectric film layers（2）On；Negative exponent Meta Materials (TNIM) structure utilizes ferritic ferromagnetic resonance and metal wire structure（Periodicity metal wire）Ion resonance effect, negative permittivity and negative magnetoconductivity are formed simultaneously in same frequency range, so as to form negative refraction coefficient（Commonly referred to as negative exponent）.
Description
Technical field
It is that a kind of microwave frequency band broadband is adjustable specifically the present invention relates to fields such as microwave band electromagnetism Meta Materials
Negative exponent metamaterial structure.
Background technology
Microwave band negative exponent Meta Materials (NIM) generally construct artificial dielectrics using sub-wavelength micro structure, form unique
The microwave electromagnetic characteristic-negative exponent, i.e. dielectric constant that does not possess of homogenous material and magnetic conductivity while being negative.Microwave is born in recent years
In the R ＆ D design that novel microwave device and equipment are applied to index Meta Materials more.
Research shows that the ferrite of ferromagnetism and ferrimagnetism can be formed about a negative magnetic conductance in its ferromagnetic resonance point
Rate frequency domain, periodicity metal wire micro-structural can be in ion resonance frequency equivalent negative permittivity formed below.By combining this
Two kinds of materials or microstructure characteristic, and it is aided with the regulation of external dc bias magnetic field, what can be produced in periodicity metal wire is equivalent
In negative permittivity frequency domain, equivalent negative magnetoconductivity is formed by ferrite, so as to form broadband and center frequency in a kind of microwave frequency band
The adjustable negative exponent metamaterial structure of rate.
The content of the invention
It is an object of the invention to a kind of adjustable negative exponent metamaterial structure in microwave frequency band broadband, the negative exponent Meta Materials
(TNIM) structure is using ferritic ferromagnetic resonance and the ion resonance effect of metal wire structure (periodicity metal wire), same
Frequency range forms negative permittivity and negative magnetoconductivity simultaneously, so as to form negative refraction coefficient (commonly referred to as negative exponent).
The present invention is achieved through the following technical solutions：A kind of adjustable negative exponent metamaterial structure in microwave frequency band broadband, bag
At least one the metamaterial structure unit set in lamination knot is included, the metamaterial structure unit includes ferrite chip layer, is situated between
Thin film layer and metal wire structure；The Dielectric film layers are arranged on ferrite chip layer, and metal wire structure is arranged on dielectric
In film layer.
Further is that the present invention is better achieved, and according to actual needs can be carried out multiple metamaterial structure units
Lamination, and avoid metal wire structure from directly being contacted with ferrite chip layer in lamination, play a part of being effectively isolated, especially adopt
Use following set-up modes：When the metamaterial structure element stack is set, the metal knot of one of metamaterial structure unit
Structure is arranged on the ferrite chip of another metamaterial structure unit layer by low dielectric material layer.
It is further for the present invention is better achieved, enable to isolation effect between two layers of metamaterial structure unit more
It is good, especially using following set-up modes：The low dielectric material layer uses polyimide or polyester film.
Further is that the present invention is better achieved, especially using following setting structures：The metal wire structure includes one
Dimension periodic arrangement (in parallel equidistant arrangement) is simultaneously attached to the metal wire on Dielectric film layers, equivalent Jie of the metal wire structure
Electric constant is negative frequency range, is mainly determined by the centre-to-centre spacing of parallel equidistant metal wire；The metal wire is periodicity metal wire,
The negative exponent metamaterial structure of X-band (7-12.6GHz), metal wire (periodicity metal wire) use geometric parameter centered on away from
1mm, width 0.2mm, thickness 0.025mm, material can use the metal material of the high conductivities such as copper, aluminium, gold, silver.
Further is that the present invention is better achieved, especially using following set-up modes：The ferrite chip layer is used
Monocrystalline or polycrystalline ferrite chip.
Further is that the present invention is better achieved, especially using following set-up modes：The ferrite chip layer is used
Monocrystalline or polycrystalline yttrium iron garnet (YIG) material, barium iron garnet (BaM) material or other low-loss high-quality-factors are (high
Saturated magnetization rate, low magnetic resonance line width) Ferrite Material, BaM saturated magnetization rate is about 3300G, line width can arrive 200Oe with
Under；The saturated magnetization rate of high-quality yig crystal is about 1700G, and line width can be to below 5Oe.What is produced near ferromagnetic resonance point is negative
Magnetic conductivity frequency bandwidth is approximately the π M of γ 2s；Wherein γ=2 π × 2.8GHz/kOe, is gyromagnet rate；MsFor ferritic saturation
The intensity of magnetization.
Ferromagnetic resonance frequency point is approximatelyWherein H is external bias magnetic field；Using iron
The saturation magnetization M of oxysomesBigger, negative magnetoconductivity frequency is higher under limited biased magnetic field strength, so as to generate
Negative exponent Frequency point it is higher.
Further is that the present invention is better achieved, especially using following set-up modes：The Dielectric film layers are using low
The thin-film material of dielectric constant, use polyester film or Kapton preferably.
Further is that the present invention is better achieved, especially using following set-up modes：The Dielectric film layers pass through exhausted
Edge medium is pasted onto on ferrite chip layer, when in use, can be in ferrite chip layer and the dielectric of adhesion metal cable architecture
It can be bonded between film layer with common quick setting cement, adhesive surface preferably needs what is adhered to for Dielectric film layers without metal wire structure
The side, to avoid ferrite chip layer and metal wire structure from directly contacting.
Further is that the present invention is better achieved, especially using following set-up modes：It is brilliant parallel to ferrite when applying
Lamella and after the bias magnetic field in microwave transmission direction, is implemented around negative magnetic capacity, with metal wire in ferromagnetic resonance point
The negative permittivity that structure is produced is combined, and realizes the negative exponent frequency band of a conducting, and the negative exponent frequency band can be inclined
Flux control is put to translate in a frequency range times over static bandwidth；The bias magnetic field that the external world applies is parallel to ferrite
Wafer layer and perpendicular to microwave tie to that is, consistent with metal wire structure direction.
Further is that the present invention is better achieved, especially using following set-up modes：The microwave transmission direction and iron
Oxysome wafer layer is parallel, and the electric field of microwave is consistent with metal wire structure trend, and microwave magnetic field is perpendicular to plane where metal wire.
The present invention compared with prior art, with advantages below and beneficial effect：
(1) negative exponent Meta Materials (TNIM) structure of the invention utilizes ferritic ferromagnetic resonance and metal wire structure (week
Phase property metal wire) ion resonance effect, negative permittivity and negative magnetoconductivity are formed simultaneously in same frequency range, so as to form negative folding
Penetrate coefficient (commonly referred to as negative exponent).
(2) regulation of the invention by external dc bias magnetic field, the negative exponent working frequency range can be several times as much as it at one
Moved in the frequency range of bandwidth.
(3) present invention passes through Ferrite Material spy using the frequency characteristic of ferrite ferromagnetic resonance and periodicity metal wire
The regulation in property parameter, the cooperation of the geometric parameter of periodicity metal wire, and external bias magnetic field, construct a kind of broadband and in
The dynamic adjustable negative exponent metamaterial structure of heart frequency.
(4) the invention provides a kind of structural scheme of new negative exponent Meta Materials, solve present main flow based on gold
The negative exponent Meta Materials narrow bandwidths and center frequency point for belonging to resonant ring micro-structural fix uncontrollable limitation；The microwave frequency band is wide
Can be implemented around microwave passband in ferromagnetic resonance point with adjustable negative exponent metamaterial structure, enable before one ferrite from
The characteristic frequency ranges not utilized, this is for novel microwave device, including transmission line structure, wave filter, shifts to device, antenna, opens
The research and development of pass etc. plays an important roll.
Brief description of the drawings
Fig. 1 is the front view of negative exponent metamaterial structure of the present invention.
Fig. 2 is that metal wire structure of the present invention sets figure.
Fig. 3 applies bias magnetic field structural representation for the present invention.
Wherein, 1- ferrite chips layer, 2- Dielectric film layers, 3- metal wire structures, 4- low dielectric material layers,Microwave
Conduction orientation.
Embodiment
The present invention is described in further detail with reference to embodiment, but the implementation of the present invention is not limited to this.
Embodiment 1：
The present invention proposes a kind of adjustable negative exponent metamaterial structure in microwave frequency band broadband, the negative exponent metamaterial structure
Using ferritic ferromagnetic resonance and the ion resonance effect of metal wire structure (periodicity metal wire), in same frequency range while shape
Into negative permittivity and negative magnetoconductivity, so that negative refraction coefficient (commonly referred to as negative exponent) is formed, as shown in Figure 1, Figure 2, Figure 3 shows,
Especially use following set-up modes：Including at least one the metamaterial structure unit set in lamination, the metamaterial structure list
Member includes ferrite chip layer 1, Dielectric film layers 2 and metal wire structure 3；The Dielectric film layers 2 are arranged on ferrite chip
On layer 1, metal wire structure 3 is arranged on Dielectric film layers 2.
Embodiment 2：
The present embodiment is further optimized on the basis of above-described embodiment, further for the present invention is better achieved,
Multiple metamaterial structure units can be subjected to lamination according to actual needs, and avoid metal wire brilliant with ferrite in lamination
Layer direct contacts, play a part of being effectively isolated, as shown in Figure 1, Figure 2, Figure 3 shows, especially using following set-up modes：It is described super
When material structure element stack is set, the metal wire structure 3 of one of metamaterial structure unit is set by dielectric materials 4
On the ferrite chip layer 1 of another metamaterial structure unit.
Embodiment 3：
The present embodiment is further optimized on the basis of any of the above-described embodiment, and further is that this hair is better achieved
It is bright, isolation effect between two layers of metamaterial structure unit is enabled to more preferably, as shown in Figure 1, Figure 2, Figure 3 shows, under especially using
State set-up mode：The low dielectric material layer 4 uses polyimide or polyester film.
Embodiment 4：
The present embodiment is further optimized on the basis of any of the above-described embodiment, and further is that this hair is better achieved
It is bright, as shown in Figure 1, Figure 2, Figure 3 shows, especially using following setting structures：The metal wire structure 3 is arranged including One Dimension Periodic
(in parallel equidistant arrangement) and the metal wire on Dielectric film layers 2 is attached to, i.e., one metamaterial structure unit one row of setting is in
The metal wire of parallel equidistant arrangement；The effective dielectric constant of the metal wire structure 3 is negative frequency range, mainly by parallel equidistant metal
The centre-to-centre spacing of line is determined；The metal wire is periodicity metal wire, in the negative exponent metamaterial structure of X-band (7-12.6GHz),
Away from 1mm, width 0.2mm, thickness 0.025mm centered on the geometric parameter that metal wire (periodicity metal wire) is used, metal wire
Material can use the metal material of the high conductivities such as copper, aluminium, gold, silver.
Embodiment 5：
The present embodiment is further optimized on the basis of any of the above-described embodiment, and further is that this hair is better achieved
It is bright, as shown in Figure 1, Figure 2, Figure 3 shows, especially using following set-up modes：The ferrite chip layer 1 uses monocrystalline or polycrystalline iron oxygen
Body chip.
Embodiment 6：
The present embodiment is further optimized on the basis of any of the above-described embodiment, and further is that this hair is better achieved
It is bright, as shown in Figure 1, Figure 2, Figure 3 shows, especially using following set-up modes：The ferrite chip layer 1 uses monocrystalline or polycrystalline yttrium
Iron garnet (YIG) material, barium iron garnet (BaM) material or other low-loss high-quality-factor (high saturation rate, low magnetic
Resonance line width) Ferrite Material, BaM saturated magnetization rate is about 3300G, and line width can be to below 200Oe；High-quality YIG is brilliant
The saturated magnetization rate of body is about 1700G, and line width can be to below 5Oe.The negative magnetoconductivity frequency bandwidth produced near ferromagnetic resonance point
It is approximately the π M of γ 2s；Wherein γ=2 π × 2.8GHz/kOe, is gyromagnet rate；MsFor ferritic saturation magnetization.
Ferromagnetic resonance frequency point is approximatelyWherein H is external bias magnetic field；Using iron
The saturation magnetization M of oxysomesBigger, ferritic ferromagnetic resonance frequency is higher under certain biased magnetic field strength, from
And the negative exponent Frequency point that can be generated is higher.
Embodiment 7：
The present embodiment is further optimized on the basis of any of the above-described embodiment, and further is that this hair is better achieved
It is bright, as shown in Figure 1, Figure 2, Figure 3 shows, especially using following set-up modes：The Dielectric film layers 2 use the film of low-k
Material, it is preferred to use polyester film or Kapton.
Embodiment 8：
The present embodiment is further optimized on the basis of any of the above-described embodiment, and further is that this hair is better achieved
It is bright, as shown in Figure 1, Figure 2, Figure 3 shows, especially using following set-up modes：The Dielectric film layers 2 are pasted onto iron by dielectric
In oxysome wafer layer 1, when in use, it be able to can be used between ferrite chip layer and the Dielectric film layers of adhesion metal cable architecture
Common quick setting cement bonding, adhesive surface preferably needs the side adhered to for Dielectric film layers without metal wire structure, to avoid
Ferrite chip layer and metal wire structure are directly contacted.
Embodiment 9：
The present embodiment is further optimized on the basis of any of the above-described embodiment, and further is that this hair is better achieved
It is bright, as shown in Figure 1, Figure 2, Figure 3 shows, especially using following set-up modes：When application is parallel to ferrite chip layer 1 and perpendicular to micro-
After the bias magnetic field of ripple conduction orientation, negative magnetic capacity, negative Jie produced with metal wire structure 3 are implemented around in ferromagnetic resonance point
Electric constant is combined, and realizes the negative exponent frequency band of a conducting, and the negative exponent frequency band can be by bias magnetic field regulation one
Translated in the individual frequency range times over static bandwidth；The bias magnetic field that the external world applies is parallel to ferrite chip layer 1 and vertical
In microwave tie to that is, consistent with the direction of metal wire structure 3.
Embodiment 10：
The present embodiment is further optimized on the basis of any of the above-described embodiment, and further is that this hair is better achieved
It is bright, as shown in Figure 1, Figure 2, Figure 3 shows, especially using following set-up modes：The microwave transmission direction and ferrite chip layer 1 are flat
OK, and the electric field of microwave moves towards consistent with metal wire structure 3, microwave magnetic field is where ferrite chip layer 1 and metal wire 3
Plane.
Embodiment 11：
The present embodiment is further optimized on the basis of any of the above-described embodiment, as shown in Figure 1, Figure 2, Figure 3 shows, using iron
Oxysome and periodicity metal wire, construct a kind of broadband and dynamic adjustable negative exponent Meta Materials (the i.e. a kind of microwave of centre frequency
The adjustable negative exponent metamaterial structure in frequency range broadband).First, the height of ferromagnetic resonance can be realized in target operation frequency range from a kind of
Quality Ferrite Material builds ferrite chip layer 1, due to being limited the iron, it is necessary to select by the maximum intensity in external bias magnetic field
The saturated magnetization rate of oxysome is sufficiently large, such as target is X-band, can use monocrystalline or polycrystalline YIG chips, to reduce insertion
Loss, selection ferromagnetic resonance quality factor preferably is high, that is, the small YIG chips of ferromagnetic resonance line width.YIG is as a kind of deep
Enter research and widely used ferrimagnetic material, be also relatively easy acquisition.Further, on specific implement, it can also use
Polycrystalline YIG chips, can be sawed with diamond saw from bulk, then be polished to the thickness of design, such as ferrite chip layer 1 is adopted
With 0.7mm, its saturated magnetization rate is about 1750G, and ferromagnetic resonance line width is about 25Oe.
When carrying out the processing of metal wire structure 3, metal wire structure (periodicity metal wire structure) 3 can be pasted first with copper foil tape
On polyimide base film (Dielectric film layers 2), then carry out chemistry and be lithographically formed.The mask of photoetching can be first using accurate
Drawing software designed image, then be directly printed upon on the high glassine paper of light transmittance with printer.The metal wire preferably made by lithography
Specification is that 0.3mm is wide, and 0.025mm is thick, and centre-to-centre spacing is 1.0mm copper cash.
Can be with the bonding of common quick setting cement, it is necessary to note between the polyimide base film of YIG chips and adhesion metal copper cash
, the adhesive surface needs of polyester substrate and YIG chips are the side without copper cash.When progress metamaterial structure element stack
When, it is necessary to polyester substrate (low dielectric material layer 4) isolation for being 0.25mm with thickness between two metamaterial structure units, then
Bonded with Instant cement, constitute the elementary cell of a Meta Materials；In specific design in use, the height of metamaterial structure unit
Spend the structures shape by transmission line such as waveguide or microstrip line.
It is described above, be only presently preferred embodiments of the present invention, any formal limitation not done to the present invention, it is every according to
According to the present invention technical spirit above example is made any simple modification, equivalent variations, each fall within the present invention protection
Within the scope of.
Claims (10)
1. a kind of adjustable negative exponent metamaterial structure in microwave frequency band broadband, it is characterised in that：Including being set at least in lamination
One metamaterial structure unit, the metamaterial structure unit includes ferrite chip layer（1）, Dielectric film layers（2）And metal
Cable architecture（3）；The Dielectric film layers（2）It is arranged on ferrite chip layer（1）On, metal wire structure（3）It is arranged on dielectric thin
Film layer（2）On.
2. the adjustable negative exponent metamaterial structure in a kind of microwave frequency band broadband according to claim 1, it is characterised in that：Institute
When stating the setting of metamaterial structure element stack, the metal wire structure of one of metamaterial structure unit（3）Pass through low dielectric material
The bed of material（4）It is arranged on the ferrite chip layer of another metamaterial structure unit（1）On.
3. the adjustable negative exponent metamaterial structure in a kind of microwave frequency band broadband according to claim 2, it is characterised in that：Institute
State low dielectric material layer（4）Using polyimide or polyester film.
4. the adjustable negative exponent metamaterial structure in a kind of microwave frequency band broadband according to claim 1, it is characterised in that：Institute
State metal wire structure（3）Arranged including One Dimension Periodic and be attached to Dielectric film layers（2）On metal wire.
5. the adjustable negative exponent metamaterial structure in a kind of microwave frequency band broadband according to claim 1, it is characterised in that：Institute
State ferrite chip layer（1）Using monocrystalline or polycrystalline ferrite chip.
6. the adjustable negative exponent metamaterial structure in a kind of microwave frequency band broadband according to claim 1 or 2 or 3 or 4 or 5,
It is characterized in that：The ferrite chip layer（1）Using monocrystalline or polycrystalline yttrium-iron-garnet material, barium iron garnet material or
The Ferrite Material of other low-loss high-quality-factors.
7. the adjustable negative exponent metamaterial structure in a kind of microwave frequency band broadband according to claim 1, it is characterised in that：Institute
Give an account of thin film layer（2）Using the thin-film material of low-k.
8. the adjustable negative exponent metamaterial structure in a kind of microwave frequency band broadband according to claim 1, it is characterised in that：Institute
Give an account of thin film layer（2）Ferrite chip layer is pasted onto by dielectric（1）On.
9. according to claim 1 ~ 5, the adjustable negative exponent metamaterial structure in a kind of microwave frequency band broadband described in 7 ~ 8 any one,
It is characterized in that：When application is parallel to ferrite chip layer（1）And after the bias magnetic field in microwave transmission direction, ferromagnetic
Resonance point is implemented around negative magnetic capacity, with metal wire structure（3）The negative permittivity of generation is combined, realize one conducting
Negative exponent frequency band, and the negative exponent frequency band can be by bias magnetic field regulation in a frequency range times over static bandwidth
Translation.
10. the adjustable negative exponent metamaterial structure in a kind of microwave frequency band broadband according to claim 9, it is characterised in that：
The microwave transmission direction and ferrite chip layer（1）It is parallel, and the electric field and metal wire structure of microwave（3）Trend is consistent, micro-
Ripple magnetic field is perpendicular to metal wire（3）Place plane.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111564704A (en) * | 2020-04-29 | 2020-08-21 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Tunable wave-absorbing metamaterial based on ferromagnetic resonance |
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