CN107317078A - A kind of Ka wave bands laminated type film ferrite micro-strip circulator - Google Patents
A kind of Ka wave bands laminated type film ferrite micro-strip circulator Download PDFInfo
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- CN107317078A CN107317078A CN201710519437.XA CN201710519437A CN107317078A CN 107317078 A CN107317078 A CN 107317078A CN 201710519437 A CN201710519437 A CN 201710519437A CN 107317078 A CN107317078 A CN 107317078A
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- ferrite
- film layer
- microstrip line
- film
- circulator
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/32—Non-reciprocal transmission devices
- H01P1/38—Circulators
- H01P1/383—Junction circulators, e.g. Y-circulators
- H01P1/387—Strip line circulators
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Abstract
The invention discloses a kind of Ka wave bands laminated type ferrite film structure microstrip circulator, the microstrip line on the first ferrite film layer, dielectric thin film layer and the second ferrite film layer and setting the second ferrite film layer is sequentially formed on the dielectric substrate including dielectric substrate, with coating process, the microstrip line is connected as the conductor circuit of circulator with external circuit；The dielectric thin film layer is using the material and its relative dielectric constant of film tack less than first ferrite film layer and the relative dielectric constant of the second ferrite film layer.Structure type of the invention by changing ferrite film, has reached the problem of can improving ferrite single thin film easy fracture, has reduced the difficulty of coating process, and the purpose of the belt effect of circulator can be lifted again.Test result indicates that, the dielectric layer of suitable thickness and low relative dielectric constant is all significantly improved to the return loss of circulator, isolation, insertion loss and bandwidth of operation.
Description
Technical field
The invention belongs to microwave device technology field, it is related to a kind of Ka wave bands laminated type film ferrite micro-strip circulator.
Background technology
Ferrite circulator is one kind in Microwave Iron Oxide Elements, in the device systems such as radar, communication, its general quilt
Composite device as signal sending and receiving.In signal transmitting and reception system, ferrite circulator can be the letters of input and output
Number isolated, while also playing the role of signal amplification and decoupling, matching.Modern communicationses, the development trend of radio-frequency technique are
Obtaining Microwave Iron Oxide Elements will must develop towards miniaturization, integrated, light-weighted direction, so the iron oxygen of microstrip line construction
Body circulator becomes research emphasis, and it is that reduction equipment size and weight are reasonable that ferrite film technology is applied into circulator
Effective method.But ferrite film is had in terms of making as the increase of film thickness causes film breaks, film performance
The shortcoming of reduction, this problem seriously restricts the development of thin-film device.
Therefore, for the defect of prior art, it is necessary to propose a kind of technical scheme that the technology to solve prior art presence is asked in fact
Topic.
The content of the invention
The purpose of the present invention is to propose to a kind of high-performance and the Ka wave band laminated type film ferrite Microstrip Loops of easy industrialization
Row device, by the way that low phase is added in the middle of ferrite film to dielectric constant film as dielectric layer, so that plated film difficulty is reduced,
It can also improve the belt performance of circulator simultaneously.
In order to overcome the defect of prior art, technical scheme is as follows：
A kind of Ka wave bands laminated type film ferrite microstrip line circulator, it is characterised in that including：Dielectric substrate, with plated film work
Skill sequentially formed on the dielectric substrate the first ferrite film layer, dielectric thin film layer and the second ferrite film layer and
Microstrip line on second ferrite film layer is set, the microstrip line as circulator conductor circuit and external circuit phase
Connection；The dielectric thin film layer is less than first ferrite film using the material and its relative dielectric constant of film tack
The relative dielectric constant of layer and the second ferrite film layer.
Preferably, the first ferrite film layer is identical with the thickness of the second ferrite film layer.
Preferably, the circulator is three terminal device, and the microstrip line includes a disk knot and three Y knots, and the Y knots are with institute
Form symmetrical centered on the center of circle for stating disk knot, the angle between each Y knots is 120 °.
Preferably, the dielectric substrate 1 is Al2O3Crystal medium substrate.
Preferably, the first ferrite film layer 2 and the second ferrite film layer 4 are BaM ferrite films layer.
Preferably, the dielectric thin film layer 3 is MgO dielectric thin film layers.
Preferably, in addition to it is arranged on the metal ground plate 6 of the dielectric substrate bottom.
Preferably, the thickness of the dielectric substrate 1 is 200 μm.
Preferably, the thickness of the first ferrite film layer 2 and the second ferrite film layer 4 is 5 μm.
Preferably, the thickness 3 of the dielectric thin film layer is 0.05 μm.
The present invention changes the structure type of ferrite film, adopted on the basis of conventional monolayers film ferrite circulator
Use and low phase is added in the middle of laminate film structure, ferrite film to dielectric constant material as dielectric layer, optimization dielectric layer is most
Good relative dielectric constant and thickness, improves the belt effect and bandwidth of operation of circulator.Meanwhile, laminated type film compare with
Single thin film has greater advantage in terms of performance and making, reduces the risk being broken in coating process and difficulty of processing.
Brief description of the drawings
Fig. 1 is a kind of top view of Ka wave bands laminated type film ferrite microstrip line circulator of the present invention.
Fig. 2 is a kind of sectional view of Ka wave bands laminated type film ferrite microstrip line circulator of the present invention.
Fig. 3 is that a kind of specific size of Ka wave bands laminated type film ferrite microstrip line circulator microstrip line of the present invention is shown
It is intended to.
Fig. 4 is that a kind of Ka wave bands laminated type film ferrite microstrip line circulator dielectric layer of the present invention is different relative
The schematic diagram of influence of the dielectric constant to circulator return loss S11.
Fig. 5 is that a kind of Ka wave bands laminated type film ferrite microstrip line circulator dielectric layer of the present invention is different relative
The schematic diagram of influence of the dielectric constant to circulator isolation S21.
Fig. 6 is that a kind of Ka wave bands laminated type film ferrite microstrip line circulator dielectric layer of the present invention is different relative
The schematic diagram of influence of the dielectric constant to circulator insertion loss S31.
Fig. 7 is that a kind of Ka wave bands laminated type film ferrite microstrip line circulator dielectric layer of the present invention is different relative
The schematic diagram of influence of the dielectric constant to circulator bandwidth of operation.
Fig. 8 is a kind of Ka wave bands laminated type film ferrite microstrip line circulator dielectric layer different-thickness of the present invention
The schematic diagram of influence to circulator return loss S11.
Fig. 9 is a kind of Ka wave bands laminated type film ferrite microstrip line circulator dielectric layer different-thickness of the present invention
The schematic diagram of influence to circulator isolation S21.
Figure 10 is that a kind of Ka wave bands laminated type film ferrite microstrip line circulator dielectric layer of the present invention is different thick
Spend the schematic diagram of the influence to circulator insertion loss S31.
Figure 11 is that a kind of Ka wave bands laminated type film ferrite microstrip line circulator dielectric layer of the present invention is different thick
Spend the schematic diagram influenceed on circulator bandwidth of operation.
Embodiment
Below in conjunction with the accompanying drawings with a kind of embodiment, the present invention is described in further detail, it is impossible to assert the present invention
Embodiment be only limitted to this.
Referring to Fig. 1, the top view of Ka wave bands laminated type film ferrite microstrip line circulator of the present invention is shown, it is three
End-apparatus part, three ports form belt input and output.Referring to Fig. 2, Ka wave bands laminated type film ferrite of the present invention is shown micro-
The sectional view of strip line circulator, including dielectric substrate 1, the first ferrite sequentially formed on the dielectric substrate with coating process
Microstrip line on film layer 2, the ferrite film of dielectric thin film layer 3 and second layer 4 and setting the second ferrite film layer
5, microstrip line 5 is connected as the conductor circuit of circulator with external circuit；Dielectric thin film layer 3 uses the material of film tack
And its relative dielectric constant is less than first ferrite film layer 2 and the relative dielectric constant of the second ferrite film layer 4.It is brilliant
Body dielectric substrate, ferrite film, the flat shape of dielectric layer can be set to rectangle, six sides according to the specific requirement of circulator
Shape, circle and other shapes, hexagon is set in following emulation testing.
Using above-mentioned technical proposal, ferrite film is to switch to bilayer by conventional monolayers film, and centre addition can invest iron
The material of oxysome plays a part of two layers of ferrite film layer above and below bonding as dielectric layer, reduces single thin film material object system
The risk of film breaks when making, so as to increase considerably film thickness, substantially reduces the difficulty of coating process, overcomes existing
As the increase of film thickness causes the technological deficiency that the probability of film breaks is increased in technology.Simultaneously as dielectric thin film layer
Using the material of low relative dielectric constant, the addition of medium with low dielectric constant material reduces the dielectric constant of monolithic film membrane layer,
Overall impedance is reduced, so that ferrite film performance also improves, and then the belt effect of circulator is improved
Really.Therefore, it is appropriate to change dielectric layer relative dielectric constant and thickness, low-loss, the high performance device of high bandwidth can be obtained, is led to
Optimization design is crossed, the relative dielectric constant and thickness of optimal dielectric layer is obtained, can be obtained than conventional monolayers film ferrite core
Row device preferably go in ring effect.
In a preferred embodiment, dielectric substrate is Al2O3 crystal medium substrates, the first ferrite film layer and the
Two ferrite films layer is BaM ferrite films layer, and dielectric thin film layer is MgO dielectric thin film layers.Ferrite film thickness and Jie
Matter thickness degree is determined by circulator specific requirement and process conditions.In a preferred embodiment, circulator is by two layers of thickness
It is made up of for 5 μm of BaM ferrite films layers and MgO dielectric thin film layers that thickness is 0.05 μm coating process, wherein, BaM
Ferrite saturation magnetization is 4000Gs, and relative dielectric constant is 12, and ferromagnetic resonance line width is 100Oe；MgO dielectric thin film layers
3 thickness are 50nm, and its relative dielectric constant is 9.8；The thickness of Al2O3 crystal mediums substrate 2 is 200 μm, its relative dielectric constant
For 9.8.The present invention is in performance simulation and it was found that, in said structure, MgO material is to BaM Ferrite Materials in performance side
Play great castering action in face.
In a preferred embodiment, in addition to it is arranged on the metal ground plate of the dielectric substrate bottom.Specifically may be used
So that using shielding box is set, shielding box is highly set to 5mm.
In a preferred embodiment, can be (micro- in matching impedance variator in order to magnetize to ferrite film
Band line) above permanent magnet is installed.
Referring to Fig. 3, the structure chart of microstrip line in the present invention is shown, microstrip line includes a disk knot and three Y knots, institute
State Y knots and form symmetrical centered on the center of circle of the disk knot, the angle between each Y knots is 120 °.The thickness of microstrip line
Degree is determined by the skin depth of the working frequency of device.In order to realize 50 ohms impedance match, it is preferable to carry out in one kind of the present invention
In mode, the radius of disk knot 5 is 0.735mm, and microstrip line uses three degression type rectangle frames, wherein, w1、w2、w3Respectively three
Individual matching line width；l1、l2、l3For three matching line lengths.Specific size w1=0.441mm, w2=0.394mm, w3=
0.351mm、l1=0.456mm, l2=0.689mm, l3=0.463mm, using regular hexagon figure, ripple port sizes 2.4mm*
2.4mm。
As shown in Fig. 4-Fig. 7, lamination circulator in Ka wavelength bands by changing the relative dielectric constant of dielectric layer,
Study the influence of its effect of being gone in ring to circulator.Result of study：Device has a significantly belt effect near 39GHz, and in
Frequency of heart point does not produce large change with the increase of relative dielectric constant.It is 15 and relative Jie by the relative dielectric constant of dielectric layer
Electric constant is contrasted when being 1, return loss | S11 | from 37.98dB liftings to 62.02dB, isolation | and S21 | from 23.75dB liftings
Arrive 26.07dB, insertion loss | S31 |.Drop to 1.27dB from 1.41dB, bandwidth of operation from 420MHz lifted to
680MHz, lifting effect is obvious.The belt effect of circulator can be influenceed by therefore deducing that the relative dielectric constant of dielectric layer,
And the relative dielectric constant of its dielectric layer is more low in 1~15 more can lift circulator performance.Although dielectric layer in theory
Relative dielectric constant is more low better, but in actual applications, except considering relative dielectric constant, it is also contemplated that selected materials can not
Can mutually it be echoed with Ferrite Material, applicant in actual experiment by having found, the relative dielectric constant of MgO material is than BaM iron oxygen
Body material is low, while having good echoing property of material, plays great castering action in aspect of performance to circulator in practice.
The lamination circulator, by changing the thickness of dielectric layer, studies its effect of being gone in ring to circulator in Ka wavelength bands
The influence of fruit.Result of study：As shown in Fig. 8-Figure 11, the change of thickness of dielectric layers has larger shadow to device S parameter and bandwidth
Ring, the influence to centre frequency is not obvious.When thickness of dielectric layers is 60nm, return loss | S11| best results, its peak value
It can reach 48.26dB；When thickness of dielectric layers is 50nm, insertion loss | S31| reached with bandwidth of operation optimal, Insertion Loss can be with
1.29dB is reached, bandwidth of operation is 590MHz；In isolation | S21| aspect, peak value is optimum value when thickness of dielectric layers is 30nm.
Consider circulator S parameter and bandwidth of operation, effect is gone in ring when thickness of dielectric layers reaches 50nm preferably, and and conventional monolayers
S parameter and the bandwidth contrast of film (thickness of dielectric layers is 0nm) circulator are as can be seen that return loss S11 is improved from 39.95dB
21.58dB, insertion loss S31 are brought up to from 20.47dB be reduced to 1.29dB, work from 1.36dB to 48.26dB, isolation S21
Make bandwidth and expand to 590MHz from 510MHz.This can illustrate that (MgO film is in this example under suitable thickness of dielectric layers
It is 50nm under the conditions of dielectric layer), this layer-stepping membrane structure can improve the belt effect of circulator and bandwidth of operation really.
The ferrite film of the circulator can use PLD or magnetron sputtering technology system with medium layer film
Make, micro-strip line impedance match circuit can be using micro belt process fabrication techniques highly developed at present.
Above content is to combine the detailed description that specific preferred embodiment is done to the present invention.Change dielectric layer material
Attribute, suitably adjusts thickness of dielectric layers, can equally obtain high performance device.Without departing from the inventive concept of the premise, also
Embodiment as multiple types can be made, the patent that the present invention is determined by the claims submitted should be all considered as belonging to
Protection domain.
Claims (10)
1. a kind of Ka wave bands laminated type film ferrite microstrip line circulator, it is characterised in that including：Dielectric substrate, with plated film
Technique sequentially formed on the dielectric substrate the first ferrite film layer, dielectric thin film layer and the second ferrite film layer, with
And microstrip line on second ferrite film layer is set, the microstrip line as circulator conductor circuit and external circuit
It is connected；The dielectric thin film layer is thin less than first ferrite using the material and its relative dielectric constant of film tack
The relative dielectric constant of film layer and the second ferrite film layer.
2. Ka wave bands laminated type film ferrite microstrip line circulator according to claim 1, it is characterised in that described
One ferrite film layer is identical with the thickness of the second ferrite film layer.
3. Ka wave bands laminated type film ferrite microstrip line circulator according to claim 1 or 2, it is characterised in that institute
Circulator is stated for three terminal device, the microstrip line includes a disk knot and three Y knots, and the Y knots are with the circle of the disk knot
Form symmetrical centered on the heart, the angle between each Y knots is 120 °.
4. Ka wave bands laminated type film ferrite microstrip line circulator according to claim 1 or 2, it is characterised in that institute
Dielectric substrate is stated for Al2O3Crystal medium substrate.
5. Ka wave bands laminated type film ferrite microstrip line circulator according to claim 1 or 2, it is characterised in that institute
It is BaM ferrite films layer to state the first ferrite film layer and the second ferrite film layer.
6. Ka wave bands laminated type film ferrite microstrip line circulator according to claim 1 or 2, it is characterised in that institute
Dielectric thin film layer is stated for MgO dielectric thin film layers.
7. Ka wave bands laminated type film ferrite microstrip line circulator according to claim 1 or 2, it is characterised in that also
Metal ground plate including being arranged on the dielectric substrate bottom.
8. Ka wave bands laminated type film ferrite microstrip line circulator according to claim 1 or 2, it is characterised in that institute
The thickness for stating dielectric substrate is 200 μm.
9. Ka wave bands laminated type film ferrite microstrip line circulator according to claim 1 or 2, it is characterised in that institute
The thickness for stating the first ferrite film layer and the second ferrite film layer is 5 μm.
10. Ka wave bands laminated type film ferrite microstrip line circulator according to claim 1 or 2, it is characterised in that institute
The thickness for stating dielectric thin film layer is 0.05 μm.
Priority Applications (1)
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| CN201710519437.XA CN107317078B (en) | 2017-06-30 | 2017-06-30 | Ka wave band lamination type thin film ferrite micro-strip circulator |
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| CN201710519437.XA CN107317078B (en) | 2017-06-30 | 2017-06-30 | Ka wave band lamination type thin film ferrite micro-strip circulator |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109066032A (en) * | 2018-07-23 | 2018-12-21 | 杭州电子科技大学 | A kind of two-sided ferrite film microstrip line circulator of Ka wave band |
| CN110581332A (en) * | 2019-08-23 | 2019-12-17 | 电子科技大学 | Self-biased millimeter wave circulator based on M-shaped hexagonal ferrite nanowire array |
| CN110911784A (en) * | 2019-12-17 | 2020-03-24 | 北京无线电测量研究所 | Micro-strip ferrite microwave switch |
| RU217140U1 (en) * | 2022-11-11 | 2023-03-20 | Общество с ограниченной ответственностью "АРГУС-ЭТ" | Surface Mount Microwave Circulator |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109066032A (en) * | 2018-07-23 | 2018-12-21 | 杭州电子科技大学 | A kind of two-sided ferrite film microstrip line circulator of Ka wave band |
| CN110581332A (en) * | 2019-08-23 | 2019-12-17 | 电子科技大学 | Self-biased millimeter wave circulator based on M-shaped hexagonal ferrite nanowire array |
| CN110581332B (en) * | 2019-08-23 | 2021-10-26 | 电子科技大学 | Self-biased millimeter wave circulator based on M-shaped hexagonal ferrite nanowire array |
| CN110911784A (en) * | 2019-12-17 | 2020-03-24 | 北京无线电测量研究所 | Micro-strip ferrite microwave switch |
| RU217140U1 (en) * | 2022-11-11 | 2023-03-20 | Общество с ограниченной ответственностью "АРГУС-ЭТ" | Surface Mount Microwave Circulator |
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