CN107032296A - 微机械压力传感器 - Google Patents

微机械压力传感器 Download PDF

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CN107032296A
CN107032296A CN201710022540.3A CN201710022540A CN107032296A CN 107032296 A CN107032296 A CN 107032296A CN 201710022540 A CN201710022540 A CN 201710022540A CN 107032296 A CN107032296 A CN 107032296A
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substrate
recess
analysis circuit
sensor element
mold
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CN107032296B (zh
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F·格拉巴迈尔
E·舍尔克斯
T·林德曼
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Robert Bosch GmbH
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00309—Processes for packaging MEMS devices suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0061—Packages or encapsulation suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/0023—Packaging together an electronic processing unit die and a micromechanical structure die
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/141—Monolithic housings, e.g. molded or one-piece housings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L7/00—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements
    • G01L7/02—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges
    • G01L7/08—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/012—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being separate parts in the same package
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0136—Growing or depositing of a covering layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0154—Moulding a cap over the MEMS device
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0785—Transfer and j oin technology, i.e. forming the electronic processing unit and the micromechanical structure on separate substrates and joining the substrates
    • B81C2203/0792—Forming interconnections between the electronic processing unit and the micromechanical structure

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

本发明涉及一种用于制造压力传感器的方法，所述方法包括步骤：提供具有凹部的基底；将微机械传感器元件在所述基底上置于所述凹部中；将分析电路在所述基底上置于所述凹部旁边；将所述分析电路与所述传感器元件电连接；借助于浇铸模围绕所述凹部覆盖所述基底，使得所述凹部封闭；浇铸在所述基底和所述浇铸模之间的分析电路；并且移除所述浇铸模。

Description

微机械压力传感器
技术领域
本发明涉及一种微机械压力传感器。本发明尤其涉及由半导体部件构成的压力传感器的制造。
背景技术
压力传感器包括布置在共同的壳体中的微机械传感器元件和分析电路。壳体保护单独的部件免受环境影响，例如灰尘、振动和热，使得压力传感器例如可以使用在车辆上。微机械传感器元件包括膜片，该膜片由于环境压力的变形或者说偏移转化为传感器信号，之后借助于分析电路进一步处理该传感器信号。为了将传感器元件和分析电路置于一个壳体中，公知多个技术。
在第一变型方案中，产生以铸造方法制造的具有凹部的壳体部分，随后传感器元件和分析电路被置入到该凹部中。之后在这些元件中的电接触还必须被钝化处理，这是费事的并且成本高的。
在第二变型方案中，分析电路和可能的其他被动部件在基底上布置和浇铸。在浇铸的同时产生凹部，在第二装备过程中将微机械传感器元件置入到该凹部中。但之后必须再将电接触钝化处理，使得过程流程包括两个连续的装备。另一方面，在此有利的是，直到微机械传感器上的所有部件都浇铸到浇铸材料中，从而良好地保护免受环境影响。浇铸材料可以比后来使用的钝化材料、例如硅胶提供更好的保护。
在第三变型方案中，在压力传感器通过浇铸材料浇铸之前，传感器元件与分析电路一起在基底上装备和接触。为此必须通常在浇铸模和基底之间插入薄膜，以便保证相对于浇铸材料的密封性。由此，装备过程够用了，并且在传感器完成的状态下也可从外部接触传感器元件。在此的缺点在于，浇铸模必须相对于传感器元件的膜片密封。在此，膜片可能轻微地损坏，或者不能够保证相对于浇铸材料的密封性。此处溢出的浇铸材料(模)可能污染单独的构件(模子溢料)，例如压力传感器和尤其是它的膜片。如果膜片与浇铸材料接触，则由此扭曲了传感器信号。
发明内容
本发明的任务是，给出用于提供压力传感器的改善的技术，该压力传感器克服上述缺点中的至少一个缺点。本发明借助于独立权利要求的主题解决该任务。
用于制造压力传感器的方法包括步骤：提供具有凹部的基底；微机械传感器元件在基底上置于凹部中；将分析电路在基底上置于凹部旁边；将分析电路与传感器元件电连接；借助于浇铸模围绕凹部覆盖基底，使得凹部封闭；浇铸在基底和浇注模之间的分析电路；并且移除浇铸模。
所述方法允许借助于仅一个装备过程制造压力传感器，在该装备过程中，传感器元件和分析电路置于基底上。在浇铸分析电路的过程中，凹部(传感器元件位于该凹部中)借助于浇铸模封闭。因此可以确保防止浇铸材料的进入。在此产生在浇铸模和基底之间的密封面，使得不必建立针对传感器元件和尤其是传感器元件的膜片的密封性。因此可以防止传感器和它的膜片的污染或者过载。
用于制造上述压力传感器的浇铸模设置成用于围绕凹部贴靠在基底上并且控出围绕分析电路和在分析电路上面的预给定区域。之后所述区域可以通过浇铸材料填充，以便浇铸在基底上的分析电路。同时可以借助于浇铸模确保防止浇铸材料侵入到凹部中，传感器元件位于该凹部中。
尤其可以通过上述方法并且例如在使用同样在上面描述的浇铸模的情况下制造的压力传感器包括具有凹部的基底、在基底上置于凹部中的微机械传感器元件、在基底上置于凹部旁边的分析电路、分析电路与传感器元件的电连接和浇铸材料，该浇铸材料覆盖分析电路并且空出传感器元件。
传感器元件可以通过浇铸材料受到好的保护，使得该传感器元件尤其可以适合用于在汽车领域中的应用。例如可以将传感器元件使用在车辆上，例如与内燃机的排气管连接。
附图说明
参照附图更详细地阐述本发明，在附图中示出
图1-4在制造压力传感器时的方法步骤。
具体实施方式
图1示出用于制造压力传感器的方法的第一步骤100。基底105包括凹部110，该凹部也可以称为空穴。基底105通常包括半导体材料、例如硅。在基底105的上表面上，微机械传感器元件115被置于凹部110中，并且分析电路120被置于凹部110旁边。微机械传感器元件115包括微机械结构(MEMS：Microelectromechanical System，微机电系统)，该微机械结构包括相对于传感器元件115其余部分可移动地支承的膜片125。分析电路120通常是半导体电路，该半导体电路一般构造为专用集成电路(ASIC：Application SpecificIntegrated Circuit)。传感器元件115和分析电路120在膜片125上的固定通常通过粘接技术实现。
在传感器元件115和分析电路120之间的电连接通常通过键合线130建立，所述键合线优选相应地导致在基底105的内部或者在基底105的表面上的导电结构。该过程也被称为接触、键合或者电连接。用于接触压力传感器的外部接头在图1中未示出。
在步骤200中，基底105、传感器元件115和分析电路120借助于浇铸模205覆盖。在此，围绕分析电路120和在分析电路120上面的区域210由浇铸模205空出。然而浇铸模205在该区域之外相对于基底105尽可能密封地封闭。此外，浇铸模205如此成型，使得该浇铸模围绕凹部110密封地贴靠在基底105上。在基底105和浇铸模205之间的密封面可以环形围绕凹部110地具有预给定的最小宽度。未设置的是，在浇铸模205和基底105之间设置薄膜或者其他暂时的或永久的密封元件。更确切地说，优选的是，浇铸模205在所述位置上直接贴靠在基底105上。
在第三步骤300中，在浇铸模205和基底105之间的区域210借助于浇铸材料305浇铸。用于引导浇铸材料305的相对应的通道可以构造在浇铸模205中。浇铸材料305通常在提高温度和必要时提高压力的情况下能够流动，以便填满区域210。浇铸材料305通常在水平方向沿基底105的表面流动，但不能侵入到凹部110的区域中，因为浇铸模205与基底105构成不可跨越的障碍。
图4示出第四步骤400，在该步骤中浇铸模205在区域210中的浇铸材料305冷却、交联或者凝固之后再被移除。由此完成压力传感器405，该压力传感器的分析电路120借助于浇铸材料305覆盖，从而得到钝化处理，而它的微机械传感器元件115能继续自由触及。压力传感器405可以尤其使用于确定压力或者气体之间的压力差，例如用在车辆上。

Claims (3)

1.用于制造压力传感器(405)的方法，其中，所述方法包括以下步骤：
-提供(100)具有凹部(110)的基底(105)；
-将微机械传感器元件(115)在所述基底(105)上置于(100)所述凹部(110)中；
-将分析电路(120)在所述基底(105)上置于(100)所述凹部(110)旁边；
-将所述分析电路(120)与所述传感器元件(115)电连接(100)；
-借助于浇铸模(205)围绕所述凹部(110)覆盖(200)所述基底(105)，使得所述凹部(110)封闭；
-浇铸(300)在所述基底(105)和所述浇铸模(205)之间的分析电路(120)；并且
-移除(400)所述浇铸模(205)。
2.用于借助根据权利要求1所述的方法制造压力传感器(405)的浇铸模(205)，其中，所述浇铸模(205)设置用于围绕所述凹部(110)贴靠在所述基底(105)上并且在所述分析电路(120)的周围和上方空出预给定区域(210)。
3.压力传感器(405)，包括
-具有凹部(110)的基底(105)；
-微机械传感器元件(115)，该微机械传感器元件在所述基底(105)上置于所述凹部(110)中；
-分析电路(120)，该分析电路在所述基底(105)上置于所述凹部(110)旁边；
-所述分析电路(120)与所述传感器元件(115)的电连接(130)；和
-浇铸材料(305)，所述浇铸材料覆盖所述分析电路(120)并且空出所述传感器元件(115)。
CN201710022540.3A 2016-01-13 2017-01-12 微机械压力传感器 Active CN107032296B (zh)

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US20030068850A1 (en) * 2000-05-17 2003-04-10 Kabushiki Kaisha Toshiba Semiconductor device, method of manufacturing semiconductor device, resin molding die, and semiconductor manufacturing system
US20060075815A1 (en) * 2004-09-24 2006-04-13 Denso Corporation Thermal-type flow rate sensor and manufacturing method thereof
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US20110083513A1 (en) * 2008-04-28 2011-04-14 Christian Wohlgemuth Pressure Sensor
CN104058360A (zh) * 2013-03-19 2014-09-24 罗伯特·博世有限公司 传感器装置以及用于制造传感器装置的方法

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TW201733135A (zh) 2017-09-16
CN107032296B (zh) 2023-01-06

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