CN107026093B - 封装件及方法 - Google Patents

封装件及方法 Download PDF

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Publication number
CN107026093B
CN107026093B CN201710057555.3A CN201710057555A CN107026093B CN 107026093 B CN107026093 B CN 107026093B CN 201710057555 A CN201710057555 A CN 201710057555A CN 107026093 B CN107026093 B CN 107026093B
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coil
device die
package
encapsulation material
top surface
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CN107026093A (zh
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朱强瑞
余振华
刘重希
蔡豪益
曾明鸿
郭鸿毅
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本发明实施例揭露一种封装件及方法。其中，所述封装件包括装置裸片；以及囊封材料，囊封所述装置裸片于其中。所述囊封材料具有顶部表面，其与所述装置裸片的顶部表面共平面。线圈是从所述囊封材料的所述顶部表面延伸到所述囊封材料的底部表面，以及所述装置裸片在所述线圈所圈绕的区中。至少一个介电层形成于所述囊封材料以及所述线圈上方。多个重布线在所述至少一个介电层中。所述线圈通过所述重布线电耦合到所述装置裸片。

Description

封装件及方法
技术领域
本揭露涉及一种封装件及方法。
背景技术
无线充电已变成日益流行的充电技术。无线充电有时也称作感应式充电，其使用电磁场来传送在能量传送器与能量接收器之间的能量。所述能量通过感应式耦合送至电气装置，所述装置接着可使用所述能量来将电池充电或使所述装置运作。感应充电器使用第一感应线圈，以从所述传送器创造交流电磁场；以及第二感应线圈，以从所述电磁场接收电力。第二感应线圈将能量转换回电流，所述电流接着被用来将电池充电或直接驱动电气装置。当彼此靠近时，这两个感应线圈形成电力变压器。
发明内容
根据本揭露的一些实施例，一种封装件包括装置裸片；以及囊封材料，囊封所述装置裸片于其中。所述囊封材料具有顶部表面，其与所述装置裸片的顶部表面共平面。线圈从所述囊封材料的所述顶部表面延伸到所述囊封材料的底部表面，以及所述装置裸片在所述线圈所圈绕的区中。至少一个介电层形成于所述囊封材料以及所述线圈上方。多个重布线在所述至少一个介电层中。所述线圈通过所述重布线电耦合到所述装置裸片。
根据本揭露的一些实施例，一种封装件包括线圈，延伸到靠近所述封装件的所有边缘；装置裸片，其在所述线圈内部；囊封材料，囊封所述装置裸片以及所述线圈于其中；至少一个介电层，在所述囊封材料以及所述线圈上方；以及多个重布线，在所述至少一个介电层中。所述重布线经电耦合到所述线圈以及所述装置裸片。
根据本揭露的一些实施例，一种方法包括形成线圈于载体上方；以及将装置裸片放于所述载体上方，其中所述装置裸片在所述线圈所圈绕的区中。所述方法进一步包括囊封所述装置裸片以及所述线圈在囊封材料中；与所述囊封材料的顶部表面一起平面化所述第一装置裸片的顶部表面以及所述线圈的顶端；形成至少一个介电层于所述囊封材料、所述线圈以及所述第一装置裸片上方；以及形成多个重布线于所述至少一个介电层中。所述重布线经电耦合到所述第一装置裸片以及所述线圈。
附图说明
本揭露的方面将在与随附图式一同阅读下列详细说明下被最优选地理解。请注意，根据业界标准作法，各种特征未依比例绘制。事实上，为了使讨论内容清楚，各种特征的尺寸可刻意放大或缩小。
图1至14是根据一些实施例绘示在一些封装件的形成中的中间阶段的剖面图。
图15是根据一些实施例绘示封装件的俯视图。
图16是根据一些实施例绘示用于形成封装件的工艺流程图。
图17是根据一些实施例绘示线圈的一部分。
图18是根据一些实施例绘示双线线圈。
具体实施方式
下列揭露提供许多用于实施本发明的不同特征的不同实施例或实例。为了简化本揭露，在下文描述组件及配置的具体实例。当然这些仅为实例而非意图为限制性。例如，在以下说明中，形成第一特征于第二特征上方或上可包括其中第一及第二特征经形成为直接接触的实施例，以及也可包括其中额外特征可形成于第一与第二特征之间而使得第一及第二特征不可直接接触的实施例。此外，本揭露可重复参考编号和/或字母于各种实例中。此重复是为了简单与清楚的目的且其本身并不决定所讨论的各种实施例和/或构形之间的关系。
再者，空间相关词汇，例如“下方”、“下面”、“下”、“上方”、“上”和类似词汇，可能是为了使说明书便于描述如图式绘示的一个组件或特征与另一个(或多个)组件或特征的相对关系而使用于本文中。除了图式中所画的方位外，这些空间相对词汇也意图用来涵盖装置在使用中或操作时的不同方位。所述设备可以其它方式定向(旋转90度或于其它方位)，据此在本文中所使用的这些空间相关说明符可以类似方式加以解释。
根据各种示范性实施例提供一种用于无线充电的封装件，其包括交流电-直流电(alternating current-direct current，AC-DC)转换器电路芯片和/或蓝牙电路芯片。绘示形成所述封装件的中间阶段。对一些实施例的一些变化做出讨论。遍及各种视图及说明性实施例，类似的参考编号用于表示类似的组件。
图1至14是根据本揭露说明一些实施例绘示在一些封装件的形成中的中间阶段的剖面图。显示于图1至14中的步骤也示意性地绘示在图16中所显示的工艺流程图200中。
图1绘示载体20以及形成于载体20上方的离型层22。载体20可以是玻璃载体、陶瓷载体或类似物。载体20可具有圆形俯视形状，且可具有硅晶片大小。例如，载体20可具有8英寸直径、12英寸直径或类似者。离型层22可由聚合物系材料(例如光热转换(light to heatconversion，LTHC)材料)所形成，其可连同载体20从将在后续步骤中形成的上方结构去除。根据本揭露的一些实施例，离型层22由环氧系热离型材料所形成。根据本揭露的一些实施例，离型层22由紫外光(ultra-violet，UV)胶所形成。离型层22可呈液体分注并固化。根据本揭露的替代性实施例，离型层22是层压膜且经层压到载体20上。离型层22的顶部表面是平整的且具有高度共平面性。
根据本揭露的一些实施例，介电层24形成于离型层22上方。相应步骤经显示成图16中所显示的工艺流程图的步骤202。在最终产品中，介电层24可用来作为钝化层，以将上方金属装置与湿气及其它有害物质的不利效果隔离。介电层24可由聚合物所形成，所述聚合物也可以是光敏材料例如聚苯并恶唑(polybenzoxazole，PBO)、聚酰亚胺、苯并环丁烯(benzocyclobutene，BCB)或类似物。根据本揭露的替代性实施例，介电层24由无机材料(等)所形成，所述材料可以是氮化物例如氮化硅、氧化物例如氧化硅、磷硅酸盐玻璃(PhosphoSilicate Glass，PSG)、硼硅酸盐玻璃(BoroSilicate Glass，BSG)、硼掺杂磷硅酸盐玻璃(Boron-doped PhosphoSilicate Glass，BPSG)或类似物。根据本揭露的其它替代性实施例，没有介电层24被形成。据此，介电层24是以虚线显示，以表明其可形成或可不形成。
图2及3绘示导电部件32的形成，由于它们穿通过将在后续步骤中分注的囊封材料52(图6)，所以下文中将导电部件32称作贯穿导体。参考图2，晶种层26是例如通过物理气相沉积(Physical Vapor Deposition，PVD)或金属箔层压而形成于介电层24上方。晶种层26可由铜、铝、钛、或其多层所形成。根据本揭露的一些实施例，晶种层26包括钛层(未分开显示)以及在钛层上方的铜层(未分开显示)。根据替代性实施例，晶种层26包括单一铜层。
光阻28被施加在晶种层26上方且接着被图案化。相应步骤也显示成图16中所显示的工艺流程图的步骤202。因此，开口30是通过曝光以及显影步骤形成在光阻28中。晶种层26的一些部分是通过贯穿开口30暴露出。
根据本揭露的一些实施例，开口30用来形成线圈33(图15)，线圈33可被用作为接收器，以于无线充电中接收能量。为了改善接收能量的效率，开口30的节距P1被尽可能小地设计且实现。例如，根据本申请案的一些实施例，节距P1小于约300微米(μm)。如图15所显示，线圈33具有四边，各系非常长(与其宽度相比)。再者，如图13所显示，组合形成如图15所显示的线圈33的导体32具有高长宽比。据此，难以形成长、窄且低节距的线圈。根据本申请案的一些实施例，根据线圈33的设计，例如形状、大小、高度(如图13中的剖面图)，以及被线圈33所圈绕的区的大小以及形状而选择光阻28。找出适当光阻材料的示范性方法包括判断多个候选光阻材料的分辨率、使用矩阵评估以判断候选光阻材料的分辨率、从具有所欲分辨率的候选光阻材料中找出适宜光阻以及接着实施实验以测试所选光阻中的哪一个可符合设计要求。然而，应意识到，适当光阻材料的种类涉及各种所讨论的因子，以及适合于一种设计的光阻可能不适合于另一种设计。
回头参考图1，因为具有光阻28是由适当材料所形成，开口30的节距P1可够低，因此用于吸收能量的线圈33的整体效率可够高以符合设计要求。根据本揭露的一些实施例，开口30具有宽度W1小于约300μm，以及在相邻开口30之间的间距S1也可以是小于约300μm。据此，节距P1可以是小于约600μm。
接下来，如也在图2中所显示，贯穿导体32是通过电镀工艺形成于开口30中，所述电镀工艺可以是电镀或无电式电镀。相应步骤经显示成图16中所显示的工艺流程图的步骤204。贯穿导体32经电镀于晶种层26的暴露的部分上。贯穿导体32可包括铜、铝、钨、镍或其合金。贯穿导体32的俯视形状包括但不限于螺旋、环、长方形、正方形、圆形及类似物，这取决于贯穿导体32的意欲功能以及可用空间。根据各种实施例，贯穿导体32的高度由后续所放的集成电路芯片(装置裸片)38(图5，包括38A与38B)的厚度确定，具有贯穿导体32的高度大于或等于装置裸片38的厚度。
在贯穿导体32的电镀工艺之后，光阻28被去除，且所得结构显示在图3中。暴露出先前被光阻28所覆盖的晶种层26的部分(图2)。接着实施蚀刻步骤，以去除晶种层26的暴露的部分，其中所述蚀刻可以是非等向性或等向性蚀刻。另一方面，被贯穿导体32所重叠的晶种层26的部分维持未被蚀刻。在整个说明书中，晶种层26的留下的下方部分被视作贯穿导体32的底部部分。当晶种层26由相似于或相同于相应的上方贯穿导体32所具者的材料形成时，晶种层26可与贯穿导体32融合而在其之间没有可区分接口。据此，晶种层26未显示在后续图式中。根据本揭露的替代性实施例，在晶种层26与贯穿导体32的上方经电镀部分之间存在有可区分接口。
贯穿导体32的俯视形状涉及它们的意欲功能且由它们的意欲功能确定。根据一些其中使用贯穿导体32形成电感的示范性实施例，所绘示的贯穿导体32可以是线圈33的部件。图15是根据一些实施例绘示示范性电感的俯视图。在图15中，贯穿导体32组合形成螺旋，以两个端口34连接到所述螺旋的相对端。根据替代性实施例(未显示)，贯穿导体32形成多个同心环，以外环圈绕内环。所述环具有中断以允许外环通过桥连接至内环，且所述环串联连接到两个端口34。端口34也连接到半导体芯片38A。
图4绘示将装置裸片38(包括38A以及38B)放置于载体20上方。相应步骤经显示成图16中所显示的工艺流程图的步骤206。装置裸片38可通过裸片附接膜(Die-Attach Film，DAF)40附接到介电层24，DAF为粘着剂膜。根据本揭露的一些实施例，装置裸片38包括AC-DC转换器芯片38A，其具有接收来自线圈33的AC电流以及转换AC电流成DC电流的功能。DC电流用以将电池(未显示)充电、或驱动封装件位于其中之相应产品的电路，所述封装件包括线圈33。
装置裸片38也可包括通信裸片38B，其可以是蓝牙低能量(Bluetooth Low-Energy，BLE)裸片。BLE裸片38B可具有与传送器(未显示)通信的功能，这是通过例如蓝牙技术。传送器以及BLE裸片38B可协商能量的传送，例如，当传送器与线圈33之间的距离足够小时和/或当电池中所储存的电力比预定的阈值电平低时。接着传送器可开始传送能量，其可以是在高频，例如在约6.78兆赫(MHz)的磁场形式。线圈33接收所述能量并馈送相应电流到AC-DC转换器芯片38A。
根据本揭露的一些实施例，封装件的形成是在晶片级。据此，多个线圈33同时形成，各圈绕一内部区。多个装置裸片38被放在载体20上。例如，线圈33的各者围绕一个装置裸片38A以及一个装置裸片38B于其中。所述线圈33以及装置裸片38被分配成具有多个行及列的阵列。
装置裸片38可分别包括半导体衬底42A以及42B，其可以是硅衬底。集成电路装置44A以及44B分别形成于半导体衬底42A以及42B上。集成电路装置44A以及44B包括有源装置例如晶体管及二极管，以及可包括或可不包括无源装置例如电阻、电容器、电感或类似物。装置裸片38可包括电耦合到相应集成电路装置44A以及44B的金属柱46。金属柱46可包埋于介电层48中，例如介电层48可以是由PBO、聚酰亚胺或BCB所形成。也绘示钝化层50，其中金属柱46可延伸到钝化层50中。钝化层50可由氮化硅、氧化硅或其多层所形成。
接下来，参考图5，囊封材料52经囊封(有时称作成型)于装置裸片38上。相应步骤经显示成图16中所显示的工艺流程图的步骤208。囊封材料52填充相邻贯穿导体32之间的间隙以及贯穿导体32与装置裸片38之间的间隙。囊封材料52可包括聚合物系材料，且可包括模塑料、模塑底胶填充、环氧化物和/或树脂。囊封材料52的顶部表面高于金属柱46的顶端。
在后续步骤中，如图6所显示，实施平面化工艺例如化学机械抛光(ChemicalMechanical Polish,CMP)工艺或研磨工艺，以减少囊封材料52的顶部表面，直到暴露出贯穿导体32及金属柱46。相应步骤经显示成图16中所显示的工艺流程图的步骤210。由于平面化，贯穿导体32的顶端大体上与金属柱46的顶部表面齐平(共平面)，且大体上与囊封材料52的顶部表面共平面。
根据本揭露的一些实施例，装置裸片38经包埋于囊封材料52中，如图6所显示。在如图5中所显示的囊封步骤之前，无源装置56(标作56A)也可被放在载体20上。相应无源装置56经显示于图14中，其也绘示更多在后续步骤中形成的特征。无源装置56A可以是电容器、电阻、电感和/或类似物。无源装置56A的表面导电部件46也在平面化步骤中暴露，如图6中所显示。据此，无源装置56A通过后续形成的重布线(Redistribution Line，RDL)电耦合到其它装置。无源装置56A可以是集成无源装置(Integrated Passive Device，IPD)，其经形成于相应芯片中的半导体衬底上。在整篇说明书中，IPD可以是单一装置芯片，其可包括单一无源装置，例如电感、电容器、电阻或类似物，没有其它无源装置以及有源装置在相应芯片中。再者，根据一些实施例，没有有源装置，例如晶体管以及二极管在IPD 56A中。
根据替代性实施例，没有无源装置被囊封在囊封材料52中。据此，在图14中，使用虚线绘示无源装置56A，以表示无源装置可被或可不被包埋在囊封材料52中。
图7至11绘示正面重布线及相应介电层的形成。参考图7，形成介电层54。相应步骤经显示成图16中所显示的工艺流程图的步骤212。根据本揭露的一些实施例，介电层54是由聚合物例如PBO、聚酰亚胺、或类似物所形成。根据本揭露的替代性实施例，介电层54是由无机材料例如氮化硅、氧化硅或类似物所形成。开口57形成于介电层54中(例如，通过曝光及显影)，以暴露出贯穿导体32及金属柱46。开口57可通过光刻工艺形成。
接下来，参考图8，形成重布线(RDL)58以连接金属柱46及贯穿导体32。相应步骤经显示成图16中所显示的工艺流程图的步骤214。RDL 58也可互连金属柱46与贯穿导体32。此外，RDL 58可用来形成用以将电感33的端口34(图15)连接到装置裸片38A的连接。RDL 58包括在介电层54上方的金属迹线(金属线)以及延伸到介电层54中的通路。在RDL 58中的通路经连接到贯穿导体32及金属柱46。根据本揭露的一些实施例，RDL 58的形成包括形成整片铜晶种层、形成及图案化屏蔽层在整片铜晶种层上方、实施电镀工艺以形成RDL 58、去除屏蔽层、以及蚀刻不被RDL 58所覆盖的整片铜晶种层的部分。RDL 58可由金属或金属合金，包括铝、铜、钨和/或其合金所形成。
参考图9，根据本揭露的一些实施例，介电层60形成于图8所显示的结构上方，接着形成开口62于介电层60中。RDL 58的一些部分因此被暴露出。相应步骤经显示成图16中所显示的工艺流程图的步骤216。可使用选自用于形成介电层54的相同候选材料的材料来形成介电层60。
接下来，如图10所显示，RDL 64形成于介电层60中。相应步骤也显示成图16中所显示的工艺流程图的步骤216。根据本揭露的一些实施例，RDL 64的形成包括形成整片铜晶种层、形成及图案化屏蔽层在整片铜晶种层上方、实施电镀工艺以形成RDL 64、去除屏蔽层、以及蚀刻不被RDL 64所覆盖的整片铜晶种层的部分。RDL 64也可由金属或金属合金，包括铝、铜、钨和/或其合金所形成。可以理解的是，虽然在绘示的示范性实施例中形成两层RDL(58及64)，但可具有任何数目的RDL层，例如一层或多于两层。所述RDL的组合可将贯穿导体32、装置裸片38、无源装置56以及类似物电互连。
图11及12是根据一些示范性实施例绘示介电层66及电连接件68的形成。相应步骤经显示成图16中所显示的工艺流程图的步骤218。参考图11，介电层66是使用例如PBO、聚酰亚胺或BCB形成。开口59形成于介电层66中，以暴露出下方金属垫，其为RDL 64的部件。根据一些实施例，凸块下金属(Under-Bump Metallurgy,UBM，未显示)经形成为延伸到介电层66中的开口59中。
接着形成电连接件68，如图12所显示。电连接件68的形成可包括将焊球放在UBM的暴露的部分上，以及接着回焊焊球。根据本揭露的替代性实施例，电连接件68的形成包括实施电镀步骤以形成焊料区在RDL 64中的暴露的金属垫上方，以及接着回焊焊料区。电连接件68也可包括金属柱、或金属柱与焊料帽，其也可通过电镀工艺形成。在整个说明书中，包括介电层24以及组合的上方结构的结构被称作封装件100，其包括多个装置裸片38的复合晶片。
接下来，封装件100是从载体20去接合，例如通过投射UV光或激光束在离型层22上，而使得离型层22在UV光或激光束的热下分解。封装件100因此从载体20去接合。所得封装件100经显示于图13中。根据本揭露的一些实施例，在所得封装件100中，介电层24留下作为封装件100的底部部件，并保护贯穿导体32。介电层24可以是整层，其中没有贯穿开口。根据替代性实施例，不形成介电层24，且在去接合之后，囊封材料52的底部表面及贯穿导体32的底部表面被暴露。可实施(或可不实施)背面研磨以去除DAF 40(若有使用它们)，而使得贯穿导体32的底部表面与装置裸片38A以及38B的底部表面共平面。装置裸片38A以及38B的底部表面也可以是半导体衬底42A以及42B的底部表面。
图14绘示将无源装置56B接合到封装件100。相应步骤经显示成图16中所显示的工艺流程图的步骤220。在图14中，无源装置56B与装置裸片38A以及38B重叠。一些无源装置56B也可与无源装置56A重叠。无源装置56B也称作表面安装装置，这是因为它们安装在封装件100的顶部表面上。无源装置56B可以是电容器、电阻、电感和/或类似物。无源装置56B可以是形成于半导体衬底上的IPD。再者，根据一些实施例，没有有源装置，例如晶体管以及二极管在无源装置56B中。根据一些实施例，被包埋无源装置56A、表面安装无源装置56、或二者经采用于封装件100中。据此，使用虚线显示无源装置56A以及56B，以表示它们可被或不被形成。将无源装置56A包埋或将无源装置56B接合在RDL的顶部具有它们自己的有利特征。例如，当采用无源装置56A且没有接合无源装置56B时，可减少封装件100的总厚度。换句话说，接合无源装置56B可减少封装件100的面积。据此，经包埋无源装置56A、表面安装无源装置56B、或二者被采用于封装件100中，以适配不同设计要求。无源装置56A以及56B可通过RDL 64以及58电耦合装置裸片38A和/或38B。
根据本揭露的一些实施例，接着封装件100被单粒化且封装件100被锯成多个彼此完全相同的封装件100'。图15绘示示范性封装件100'的俯视图。根据一些示范性实施例，封装件100'包括四个边缘100A。图13中所显示的剖面图是从含有图15中线13-13的平面获得。图14中所显示的剖面图是从含有图15中线14-14的平面获得。电感33具有靠近相应边缘100A的四个面。再者，不可有位于电感33以及边缘100A之间的任何装置。电感33的端口34通过RDL 58/64连接到装置裸片38A。装置裸片38A以及38B被线圈33(以及相应的贯穿导体32)所围绕，其中没有装置裸片且没有无源装置是在线圈33的外部，因此最小化封装件100'的面积。无源装置56(包括56A和/或56B)也被电感33所围绕(在封装件100'的俯视图中)。参考图15，根据一些实施例，线圈33的长度L1(其为所述同心环的最长长度)在约封装件100'的长度L2(其也是囊封材料52的长度)的50％到约99％之间的范围。所述同心环的最短长度L3是长度L2的约30％到约70％。线圈33所占面积(包括被线圈33所环绕的中心面积)可在封装件100'的俯视面积的约25％以及约98％。宽度W1/H1的比值(图14)可在约0.4与约1.5之间的范围。
图14也绘示形成于介电层54、60以及66中的密封环70。密封环70是在RDL 58以及64形成的同时形成。在封装件100'的俯视图中，密封环70围绕线圈33，且形成于线圈33与封装件100'的相应边缘之间(图15，其中密封环70未显示)。密封环70可以是电性接地或电性浮接。
图17绘示图15中的封装件100'的部分72的放大图，其中绘示两个贯穿导体32作为实例。为减小压力，贯穿导体32可具有圆角。例如，贯穿导体的半径R1可在约W1/2与2W1/3之间的范围。
根据一些实施例，为增进效率，线圈33的外环可具有大于或等于内环的宽度的宽度。例如，参考图15，宽度W1A(其可能是最外环的宽度，可等于或大于最内环的宽度W1B。比值W1B/W1A可在约1/2与约2/3之间的范围。再者，从外环往内环，贯穿导体32的宽度可以是越来越少或每几环周期性地减少。
图18是根据一些实施例绘示包括双线线圈33的封装件100'。为了更清楚的视图，未于图18中绘示将线圈33的所述端连接到装置裸片38A的RDL 58以及64(图15)。图18中的结构基本上与图15中所显示者相同，除了替代于具有单一贯穿导体32卷起，线圈33具有平行的两个贯穿导体32A以及32B卷起。贯穿导体32A以及32B彼此平行，且如同单一导体组合使用，以形成线圈。为了区分贯穿导体32A与32B，所以可清楚地看见它们配置，使用不同图案显示贯穿导体32A以及32B。
如图18中所显示，贯穿导体32A以及32B的各者由其本身形成线圈。贯穿导体32A以及32B的所述端通过导体74A以及74B互连。连接件74A以及74B的各者可以是当贯穿导体32A以及32B形成时同时形成的贯穿通路、或可以是RDL 58以及64的一部分。连接件74A以及74B也可包括贯穿导体部分与RDL部分两者。根据一些实施例贯穿导体32A以及32B仅在它们的端而不是在中间连接，如图18中所显示。根据替代性实施例，相似于连接件74A以及74B的额外连接件可周期地形成，以将贯穿导体32A的中间部分互连到贯穿导体32A的相应部分。例如，贯穿导体32A以及32B的各直线部分可包括一或多个互连件。
贯穿导体32A与32B互连的结果是贯穿导体32A与32B组合形成线圈。当图18中的线圈33在高频操作时，例如数兆赫或更高，其具有与如图15中所显示的主体线圈33可相比拟，且有时较如图15中所显示的主体线圈33更优选的性能。此可能是因表层效果所致。再者，具有与块线圈相比较窄的贯穿导体32A与32B，因为它等同于去除如图15中所显示贯穿导体32的中间部分，在贯穿导体32A和32B的电镀工艺中图案负载效果被减少。
本揭露的实施例具有一些有利特征。通过包埋(有源)装置裸片以及包埋和/或接合无源装置(裸片)在电感所圈绕的区中，无线充电器的面积被减少。应意识到，传统上，装置裸片以及无源装置不能被放在电感内部，因为这会造成电力接收效率损失到不可接受的水平。根据本揭露的一些实施例，通过减少电感33的节距，如果改善接收效率，其会弥补因将装置裸片或无源装置放在电感所圈绕的区中所造成的效率损失。接收效率因此增加到可接受水平。
根据本揭露的一些实施例，一种封装件包括装置裸片；以及囊封材料，囊封所述装置裸片于其中。所述囊封材料具有顶部表面，与所述装置裸片的顶部表面共平面。线圈是从所述囊封材料的所述顶部表面延伸到所述囊封材料的底部表面，以及所述装置裸片在所述线圈所圈绕的区中。至少一个介电层经形成于所述囊封材料以及所述线圈上方。多个重布线在所述至少一个介电层中。所述线圈是通过所述重布线电耦合到所述装置裸片。
根据本揭露的一些实施例，一种封装件包括线圈，延伸到靠近所述封装件的所有边缘；装置裸片，在所述线圈内部；囊封材料，囊封所述装置裸片以及所述线圈于其中；至少一个介电层，在所述囊封材料以及所述线圈上方；以及多个重布线，在所述至少一个介电层中。所述重布线经电耦合到所述线圈以及所述装置裸片。
根据本揭露的一些实施例，一种方法包括形成线圈于载体上方；以及将装置裸片放在所述载体上方，其中所述装置裸片在所述线圈所圈绕的区中。所述方法进一步包括囊封所述装置裸片以及所述线圈于囊封材料中；与所述囊封材料的顶部表面一起平面化所述第一装置裸片的顶部表面以及所述线圈的顶端；形成至少一个介电层于所述囊封材料、所述线圈以及所述第一装置裸片上方；以及形成多个重布线于所述至少一个介电层中。所述重布线经电耦合到所述第一装置裸片以及所述线圈。
前面列述了数个实施例的特征以便所属领域的一般技术人员可更有选地理解本揭露的方面。所属领域的一般技术人员应了解它们可轻易地使用本揭露作为用以设计或修改其它工艺及结构的基础以实现本文中所介绍实施例的相同目的和/或达成本文中所介绍实施例的相同优点。所属领域的一般技术人员也应体认到这些均等构造不会脱离本揭露的精神及范围，以及它们可在不脱离本揭露的精神及范围下做出各种改变、取代或替代。
符号说明
13-13 线
14-14 线
20 载体
22 离型层
24 介电层
26 晶种层
28 光阻
30 贯穿开口/开口
32 导电部件/贯穿导体/导体
32A 贯穿导体
32B 贯穿导体
33 线圈/电感/双线线圈
34 端口
38 集成电路芯片/装置裸片
38A 半导体芯片/交流电-直流电转换器芯片
38B 通信裸片/蓝牙低能量裸片/装置裸片
40 裸片附接膜
42A 半导体衬底
42B 半导体衬底
44A 集成电路装置
44B 集成电路装置
46 金属柱/表面导电部件
48 介电层
50 钝化层
52 囊封材料
54 介电层
56 无源装置/表面安装装置
56A 无源装置
56B 无源装置/表面安装装置
57 开口
58 重布线
59 开口
60 介电层
66 介电层
62 开口
64 重布线
68 电连接件
70 密封环
72 部分
74A 连接件
74B 连接件
100 封装件
100' 封装件
100A 边缘
200 工艺流程图
202 步骤
204 步骤
206 步骤
208 步骤
210 步骤
212 步骤
214 步骤
216 步骤
218 步骤
220 步骤
L1 长度
L2 长度
L3 长度
P1 节距
R1 半径
S1 间距
W1 宽度
W1A 宽度
W1B 宽度

Claims (20)

1.一种封装件，其包含：
第一装置裸片，其包括顶部表面及相对于所述顶部表面的底部表面；
囊封材料，囊封所述第一装置裸片于其中，其中所述囊封材料具有顶部表面，与所述第一装置裸片的所述顶部表面共平面；
线圈，其包括与所述第一装置裸片的所述顶部表面共平面的顶端以及与所述第一装置裸片的所述底部表面共平面的底端，且从所述囊封材料的所述顶部表面延伸到所述囊封材料的底部表面，其中所述第一装置裸片在所述线圈所圈绕的区中；
至少一个介电层，在所述囊封材料以及所述线圈上方；以及
多个重布线，在所述至少一个介电层中，其中所述线圈通过所述重布线电耦合到所述第一装置裸片。
2.根据权利要求1所述的封装件，其中没有装置裸片放置在所述线圈的外部。
3.根据权利要求1所述的封装件，其中所述第一装置裸片为交流电-直流电AC-DC转换器，以及所述AC-DC转换器用以接收所述线圈所接收的电力并将所述电力从AC转换成DC，以及所述封装件进一步包含第二装置裸片，其中所述第二装置裸片包含蓝牙电路。
4.根据权利要求1所述的封装件，其中所述线圈为双线线圈，包括两个平行导体，以及所述线圈的相对端被互连。
5.根据权利要求1所述的封装件，其进一步包含集成无源装置IPD，在所述重布线上方，其中在所述封装件的俯视图中，所述IPD被所述线圈所圈绕。
6.根据权利要求1所述的封装件，其进一步包含额外集成无源装置IPD，囊封在所述囊封材料中，其中所述额外IPD被所述线圈所圈绕。
7.根据权利要求1所述的封装件，其中所述线圈包含多个贯穿导体，穿过所述囊封材料且彼此互连成集成线圈。
8.一种封装件，其包含：
线圈，延伸至靠近所述封装件的所有边缘；
第一装置裸片，在所述线圈内部；
囊封材料，囊封所述第一装置裸片以及所述线圈于其中；
至少一个介电层，在所述囊封材料以及所述线圈上方；及
多个重布线，在所述至少一个介电层中，其中所述重布线电偶合至所述线圈以及所述第一装置裸片，以及其中所述第一装置裸片包括顶部表面及相对于所述顶部表面的底部表面，以及所述线圈包括与所述第一装置裸片的所述顶部表面共平面的顶端以及与所述第一装置裸片的所述底部表面共平面的底端。
9.根据权利要求8所述的封装件，其中所述第一装置裸片的所述顶部表面、所述线圈的所述顶端、以及所述囊封材料的顶部表面彼此共平面。
10.根据权利要求8所述的封装件，其中所述线圈穿过所述囊封材料，以及所述第一装置裸片的所述底部表面进一步包含与所述囊封材料的底部表面以及所述线圈的所述底端共平面的裸片附接膜。
11.根据权利要求8所述的封装件，其中没有装置裸片在所述线圈的外部。
12.根据权利要求8所述的封装件，其中所述第一装置裸片为AC-DC转换器，以及所述AC-DC转换器用以接收所述线圈所接收的电力并将所述电力从AC转换成DC。
13.根据权利要求8所述的封装件，其进一步包含第二装置裸片，其中所述第二装置裸片包含蓝牙电路。
14.根据权利要求8所述的封装件，其进一步包含集成无源装置，在所述重布线上方，其中在所述封装件的俯视图中，所述集成无源装置被所述线圈所圈绕，以及额外集成无源装置。
15.根据权利要求14所述的封装件，其进一步包含额外集成无源装置，囊封在所述囊封材料中，其中所述额外集成无源装置被所述线圈所圈绕。
16.一种封装方法，其包含：
形成线圈在载体上方；
将第一装置裸片放在所述载体上方，其中所述第一装置裸片在所述线圈所圈绕的区中；
囊封所述第一装置裸片以及所述线圈在囊封材料中；
与所述囊封材料的顶部表面一起平面化所述第一装置裸片的顶部表面以及所述线圈的顶端；
形成至少一个介电层在所述囊封材料、所述线圈以及所述第一装置裸片上方；以及
形成多个重布线在所述至少一个介电层中，其中所述重布线电耦合至所述第一装置裸片以及所述线圈，以及其中所述第一装置裸片包括相对于所述第一装置裸片的所述顶部表面的底部表面，以及所述线圈包括与所述第一装置裸片的所述底部表面共平面的底端。
17.根据权利要求16所述的封装方法，其进一步包含将集成无源装置接合在所述重布线上方以及电耦合至所述重布线，其中在所述重布线的俯视图中，所述集成无源装置被所述线圈所圈绕。
18.根据权利要求16所述的封装方法，其进一步包含将额外集成无源装置放在所述载体上方，以所述额外集成无源装置被所述囊封材料囊封，其中所述额外集成无源装置被所述线圈所圈绕。
19.根据权利要求16所述的封装方法，其进一步包含实施单粒化，以将所述线圈以及所述第一装置裸片分开成与其他封装件分开的封装件，其中在所述单粒化之后，没有装置裸片以及无源装置在所述线圈的外部。
20.根据权利要求16所述的封装方法，其进一步包含：
将第二装置裸片放在所述载体上方，其中所述第二装置裸片在所述线圈所圈绕的所述区中，以及其中所述第二装置裸片在所述囊封材料中且被所述线圈所圈绕。
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