CN107024841A - A kind of lithographic optical formula overlay measures pattern structure - Google Patents
A kind of lithographic optical formula overlay measures pattern structure Download PDFInfo
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- CN107024841A CN107024841A CN201710343152.5A CN201710343152A CN107024841A CN 107024841 A CN107024841 A CN 107024841A CN 201710343152 A CN201710343152 A CN 201710343152A CN 107024841 A CN107024841 A CN 107024841A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
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Abstract
The present invention provides a kind of lithographic optical formula overlay and measures pattern structure, and the measurement pattern structure at least includes：First quartile area that is being divided into by the X-axis and Y-axis that intersect vertically and arranging successively, the second quadrant area, third quadrant area, fourth quadrant area；Wherein, the pattern in first quartile area and third quadrant area is arranged in the first direction, and the pattern in the second quadrant area and fourth quadrant area is arranged in a second direction；Pattern includes front layer pattern and works as floor pattern above the front layer pattern in each quadrant area, the front layer pattern and when layer pattern is spaced, and 2n+1 is met when the total radical of the pattern of floor pattern and front layer pattern in each quadrant area, n is the integer more than 0.The precision of measurement can be increased by measuring pattern structure using the overlay of the present invention, reduce error in measurement, the current layer pattern for recycling the pattern structure offset parameter feedback correction of the present invention to make next time, be made a variation so as to overcome caused by board error in processing procedure etc..
Description
Technical field
The invention belongs to ic manufacturing technology field, more particularly to a kind of lithographic optical formula overlay measures pattern knot
Structure.
Background technology
Semiconductor technology continues on Moore's Law development, and critical dimension is less and less, and the integrated level of chip is also increasingly
Height, this proposes more stringent requirement to semiconductor fabrication process, it is therefore necessary to reduce as much as possible in technical process
The error of each step, reduces the component failure caused by error.
In semiconductor fabrication, photoetching process develops as the core technology in each technology generation.Photoetching be by
The circuit structure of graphic form is transferred to the silicon for scribbling photoresist by steps such as alignment, exposure, developments on photomask (mask)
The technical process on piece surface, photoetching process can be etching in silicon chip surface one layer of photoresist masking figure of formation, its subsequent technique
Or ion implanting., it is necessary to tens of time lithography steps in the CMOS technology of standard, and the factor of photoetching process error is influenceed, removed
Outside the resolution ratio of litho machine, the accuracy that is also aligned.
The overlay (Overlay) of photoetching is when measuring a photoengraving pattern to be placed in silicon chip, with previous defined mistake
Alignment precision between pattern.Because integrated circuit is constituted by plurality of layers circuit is overlapping, it is therefore necessary to ensure each layer with
The alignment precision of the layer of front or behind, if alignment precision exceeds claimed range, being likely to result in whole circuit can not be complete
Into design work.Therefore in each layer of manufacturing process, the alignment progress of itself and front layer is measured.
Typically, overlay measurement is carried out using the pattern being etched in layer.A kind of the most frequently used overlay measures pattern (Mark)
Optical profile type IBO (Image Based Overlay), it is this measurement pattern be divided into again (BIB, the Box-in-Box) pattern of box in box with
Raster pattern pattern (sometimes referred to as AIM, Advanced Image Measurement) two major classes.BIB patterns as shown in figure 1,
The pattern is made up of a pair of concentric squares, generally by relatively more one of square (as layer pattern 20A) relative to another
The position of square (front layer pattern 10A) judges overlay offset Δ x, and central dotted line represents line of symmetry.AIM patterns such as Fig. 2
Shown, the pattern includes two kinds of periodic structures, and one of which periodic structure is located at front layer (can be described as first layer), is front layer
Pattern 10A, another periodic structure, which is located at, works as layer (can be described as the second layer), as layer pattern 20A, to pass through two kinds of periodicity of calculating
The change in location of structure obtains judgement overlay offset Δ x.There are a kind of diffraction mode DBO patterns in addition as shown in figure 3, wherein most upper
Layer twill pattern represents second layer photoresistance pattern, and orlop represents that first layer etches pattern without filling pattern.Above by utilization
Different measurement signals obtains oscillogram, and then can make overlay analysis.
The content of the invention
Pattern structure is measured it is an object of the invention to provide a kind of lithographic optical formula overlay, to increase the accurate of measurement
Degree, reduces error in measurement.
In order to achieve the above objects and other related objects, the present invention provides a kind of lithographic optical formula overlay and measures pattern knot
Structure, the measurement pattern structure at least includes：First quartile area that is being divided into by the X-axis and Y-axis that intersect vertically and arranging successively,
Second quadrant area, third quadrant area, fourth quadrant area；
Wherein, pattern is arranged in the first direction in the first quartile area and the third quadrant area, second quadrant
Pattern is arranged in a second direction in area and the fourth quadrant area；Pattern includes front layer pattern and positioned at institute in each quadrant area
State and work as layer pattern above front layer pattern, the front layer pattern and described when layer pattern is spaced, and in each quadrant area
It is described when the total radical of pattern of layer pattern and the front layer pattern meets 2n+1, n is the integer more than 0.
A kind of scheme of optimization of pattern structure, the measurement pattern structure are measured as lithographic optical formula overlay of the present invention
On the position of wafer Cutting Road.
A kind of scheme of optimization of pattern structure, the current pattern and institute are measured as lithographic optical formula overlay of the present invention
The shape for stating front layer pattern is rectangle, and the length of the measurement pattern structure is less than or equal to 30 μm, width be less than or
Equal to 30 μm, to meet the wafer Cutting Road space use demand.
A kind of scheme of optimization of pattern structure, the first direction and institute are measured as lithographic optical formula overlay of the present invention
State the vertical angle for X-direction and Y direction between second direction.
A kind of scheme of optimization of pattern structure is measured as lithographic optical formula overlay of the present invention, in each quadrant area
In, the front layer pattern is even number root, described when layer pattern is odd number root.
A kind of scheme of optimization of pattern structure is measured as lithographic optical formula overlay of the present invention, in each quadrant area
In, the front layer pattern is odd number root, described when layer pattern is even number root.
A kind of scheme of optimization of pattern structure is measured as lithographic optical formula overlay of the present invention, in each quadrant area
In, described when each size of layer pattern is identical, each size of the front layer pattern is identical, the front layer pattern and institute
State when the line length of layer pattern is no more than 15 μm.
A kind of scheme of optimization of pattern structure is measured as lithographic optical formula overlay of the present invention, the first quartile area
The pattern in pattern and the third quadrant area axisymmetricly, the pattern in the second quadrant area and the pattern in the fourth quadrant area
Axisymmetricly.
The present invention also provides a kind of method for forming above-mentioned lithographic optical formula overlay measurement pattern structure, and methods described is at least
Including：
The front layer pattern is formed in front layer, the front layer pattern is in the first quartile area and the third quadrant area
It is middle to be arranged along the first direction, arranged in the second quadrant area and the fourth quadrant area along the second direction；With
And
Working as above the front layer formed in layer it is described work as layer pattern, it is described when floor pattern in the first quartile area and
Arranged in the third quadrant area along the first direction, along described the in the second quadrant area and the fourth quadrant area
Two directions are arranged, and the front layer pattern and described when layer pattern is spaced；
A kind of scheme of optimization of the method for pattern structure is measured as lithographic optical formula overlay of the present invention, using optical quantities
Survey method calculates overlay offset of the current pattern relative to the front layer pattern described in the measurement pattern structure.
As described above, the lithographic optical formula overlay of the present invention measures pattern structure, at least include：By the X-axis intersected vertically
First quartile area that is being divided into Y-axis and arranging successively, the second quadrant area, third quadrant area, fourth quadrant area；Wherein, first
Pattern is arranged in the first direction in quadrant area and third quadrant area, and pattern is in a second direction in the second quadrant area and fourth quadrant area
Arrangement；Pattern includes front layer pattern and works as floor pattern, the front layer above the front layer pattern in each quadrant area
Pattern and when layer pattern is spaced, and 2n is met when the total radical of the pattern of floor pattern and front layer pattern in each quadrant area
+ 1, n are the integer more than 0.The precision of measurement can be increased by measuring pattern structure using the overlay of the present invention, reduced to measure and missed
Difference, the current layer pattern for recycling the pattern structure offset parameter feedback correction of the present invention to make next time, so as to overcome processing procedure
In board error etc. caused by make a variation.
Brief description of the drawings
Fig. 1 is the BIB pattern schematic diagrames of prior art.
Fig. 2 is the AIM pattern schematic diagrames of prior art.
Fig. 3 is the DBO pattern schematic diagrames of prior art.
Fig. 4 measures pattern structure one embodiment schematic diagram for the lithographic optical formula overlay of the present invention.
Fig. 5 is AA ' the directions sectional view along along Fig. 4.
Fig. 6 is another embodiment schematic diagram of the lithographic optical formula overlay measurement pattern structure of the present invention.
Fig. 7 is the overlay situation in the preceding actual product of pattern structure feedback correction using the present invention.
Fig. 8 is the overlay situation in actual product after being maked corrections using the pattern structure feedback of the present invention.
Component label instructions
1 first quartile area
11 first front layer patterns
12 first work as layer pattern
2 second quadrant areas
21 second front layer patterns
22 second work as layer pattern
3 third quadrant areas
31 the 3rd front layer patterns
32 the 3rd work as layer pattern
4 fourth quadrant areas
41 the 4th front layer patterns
42 the 4th work as layer pattern
5 actual product front layer patterns
6 actual products work as layer pattern
100 substrates
110 front layers
120 work as layer
10A front layer patterns
20A works as layer pattern
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Refer to accompanying drawing.It should be noted that the diagram provided in the present embodiment only illustrates the present invention in a schematic way
Basic conception, then in schema only display with relevant component in the present invention rather than according to component count during actual implement, shape
Shape and size are drawn, and it is actual when implementing kenel, quantity and the ratio of each component can be a kind of random change, and its component cloth
Office's kenel may also be increasingly complex.
The present invention provides a kind of lithographic optical formula overlay and measures pattern structure, and the measurement pattern structure at least includes：By
First quartile area that is that the X-axis and Y-axis intersected vertically is divided into and arranging successively, the second quadrant area, third quadrant area, fourth quadrant
Area；
Wherein, pattern is arranged in the first direction in the first quartile area and the third quadrant area, second quadrant
Pattern is arranged in a second direction in area and the fourth quadrant area；Pattern includes front layer pattern and positioned at institute in each quadrant area
State and work as layer pattern above front layer pattern, the front layer pattern and described when layer pattern is spaced, and in each quadrant area
It is described when the total radical of pattern of layer pattern and the front layer pattern meets 2n+1, n is the integer more than 0.
It is described to measure figure in (accompanying drawing 5 is the sectional view in accompanying drawing 4 along AA ' directions), the present embodiment as shown in Fig. 4~Fig. 5
Type structure at least includes：Being divided into by the X-axis and Y-axis that intersect vertically and arrangement first quartile area 1, the second quadrant area 2, the successively
Three quadrant areas 3, fourth quadrant area 4.In the present embodiment, n=1, described in each quadrant area works as floor pattern and the front layer
The total radical of pattern of pattern is 3.
As shown in figure 4, cross dotted line horizontally and vertically represents X-axis and Y-axis respectively, by the X-axis and Y-axis
It is first quartile area 1 to be separated to form the upper right corner in four regions, four regions, and the upper left corner is the second quadrant area 2, the lower left corner
For third quadrant area 3, the lower right corner is fourth quadrant area 4.
Wherein, the first quartile area 1 includes many first front layer patterns 11 arranged in the first direction and positioned at described
The first of the top of first front layer pattern 11 works as layer pattern 12.From the point of view of vertical view, the first front layer pattern 11 and first is worked as
Layer pattern 12 is spaced.
The second quadrant area 2 includes many second front layer patterns 21 arranged in a second direction and before described second
The second of the top of layer pattern 21 works as layer pattern 22.From the point of view of vertical view, the second front layer pattern 21 and second works as layer pattern
22 are spaced.
The third quadrant area 3 includes many 3rd front layer patterns 31 arranged in the first direction and before the described 3rd
The 3rd of the top of layer pattern 31 works as layer pattern 32.From the point of view of vertical view, the 3rd front layer pattern 31 and the 3rd works as layer pattern
32 are spaced.
The fourth quadrant area 4 includes many 4th front layer patterns 41 arranged in a second direction and before the described 4th
The 4th of the top of layer pattern 41 works as layer pattern 42.From the point of view of vertical view, the 4th front layer pattern 41 and the 4th works as layer pattern
42 are spaced.The sectional view along AA ' directions in fourth quadrant area 4 is illustrated in figure 5, from fig. 5, it can be seen that in the substrate
Front layer 110 and when layer 120 is formed on 100, front layer pattern 41 is formed with front layer 110, when being formed with layer 120 when layer figure
Type 42.In other quadrant areas, the front layer pattern with when layer pattern be also it is similar it is this be spaced structure, do not use herein
Accompanying drawing one is shown again and again.
It is X-direction and Y direction for the orientation of pattern, between the first direction and the second direction
Vertical angle.Can be that first direction is X-direction, second direction is Y direction, i.e., in first quartile area 1 and third quadrant area 3
Pattern arranged along X-direction, the pattern in the second quadrant area 2 and fourth quadrant area 4 is arranged along Y direction；Can also
It is that first direction is Y direction, the pattern in the X-direction of second direction, i.e. first quartile area 1 and third quadrant area 3 is along Y
Direction of principal axis is arranged, and the pattern in the second quadrant area 2 and fourth quadrant area 4 is arranged along X-direction.In the present embodiment, the is set
One direction is X-direction, the Y direction of second direction.
In each quadrant area, total pattern radical is 2n+1, that is, comes to odd number chromosome type, therefore, the current layer
Pattern and front layer pattern are respectively odd number root and even number root.Can be that front layer pattern is odd number root in this 2n+1 pattern, when
Layer pattern is even number root；Can also be that front layer pattern is odd number root, when layer pattern is even number root.In the present embodiment, current layer figure
Type and front layer pattern come to 3, wherein, front layer pattern is 2 (even number root), and when layer pattern is 1 (odd number root), one is worked as
Layer pattern is located between two front layer patterns.
As an example, in each quadrant area, each identical when the size of layer pattern, the chi of each front layer pattern
It is very little identical.In the present embodiment, when layer pattern is identical with the equal size of front layer pattern.
As an example, the front layer pattern and the line length when layer pattern are no more than 15 μm.The front layer pattern and when layer figure
Spacing between type is not limited, as long as more than 0.Spacing distance between quadrant area and quadrant area is not also limited, as long as being more than 0
Can.
In the present embodiment, the front layer pattern and the line length when layer pattern are 10 μm, the front layer pattern and when layer pattern
Between spacing be 5 μm, between first quartile area, the second quadrant area, third quadrant area and fourth quadrant area at intervals of 5 μm.
As an example, the pattern in the pattern in the first quartile area 1 and third quadrant area 3 is axisymmetricly, described second as
The pattern in limit area 2 and the pattern in fourth quadrant area 4 are axisymmetricly.In the present embodiment, first quartile area 1, the second quadrant area 2,
Three quadrant areas 3 and fourth quadrant area 4 are same combination, i.e., one between being two preceding layer patterns and being located at works as layer pattern
Overlay combination distribution.As shown in figure 5, in fourth quadrant area 4, including two preceding layer patterns 41 and one between being located at work as layer
Pattern 42.But, in other embodiments or first quartile area 1 and third quadrant area 3 are two preceding layer patterns and position
One between when the overlay combination distribution of layer pattern, and the second quadrant area 2 and fourth quadrant area 4 be two when layer pattern and
The overlay combination distribution of a front layer pattern between being located at.Certainly, in a further embodiment, it can also be other groups
Close, as long as meeting the pattern in the pattern in the first quartile area 1 and third quadrant area 3 axisymmetricly, the second quadrant area 2
Pattern and the pattern in fourth quadrant area 4 axisymmetricly, do not limit combination herein.
It should be noted that the present embodiment is illustrated by taking n=1 as an example, but in other embodiments, as n=2,
Can be pattern structure as shown in Figure 6, total radical that the pattern radical of each quadrant is satisfied by n=2, i.e., each quadrant area is
5.But in other embodiments, for example, can be three chromosome types, the second quadrant using first quartile area and third quadrant area as 3
Situations such as 5 chromosome types etc. is in area and fourth quadrant area, are not limited herein.And in other embodiment, n can also be 3,4,
5 ... etc., it is not limited herein.
As an example, the shape of the current pattern and front layer pattern is rectangle.Certainly, in other embodiments, institute
It can also be other suitable pattern shapes to state current pattern and front layer pattern.
It is located in addition, the photoetching is measured into pattern structure on the position of wafer Cutting Road (not illustrated), it is described
Measuring the length of pattern structure needs to be less than or equal to 30 μm, and width needs to be less than or equal to 30 μm, to meet the wafer
Cutting Road space use demand.In the present embodiment, the measurement pattern structure length is equal to 30 μm, and width is equal to 30 μm, with most
Bigization utilizes the space of wafer Cutting Road.
The present invention also provides a kind of method that lithographic optical formula overlay measures pattern structure, and methods described at least includes as follows
Step：
First, the front layer pattern is formed in front layer, the front layer pattern is in the first quartile area and the described 3rd
Arrange, arranged in the second quadrant area and the fourth quadrant area along the second direction along the first direction in quadrant area
Row；
Then, working as above the front layer formed in layer it is described work as layer pattern, it is described when layer pattern described first as
Limit along first direction arrangement in area and the third quadrant area, the edge in the second quadrant area and the fourth quadrant area
Second direction arrangement, and the front layer pattern and described when layer pattern is spaced.
After the overlay measurement pattern structure for obtaining the present embodiment, it is possible to use optical means obtains current pattern respectively
The light wave waveform of front layer pattern, recycles optical measurement (OM) method to calculate the center of ripple, for example, can be by the second quadrant
The ripple center that the current layer pattern in area 2 and fourth quadrant area 4 is read, the average wave center read than upper front layer pattern, so as to ask
Go out X-direction offset；Then the ripple center read by the current layer pattern in first quartile area 1 and third quadrant area 3, than going forward
The average wave center that layer pattern is read, so as to obtain Y direction offset.This method for calculating overlay offset, it is and existing
It is similar that IBO concepts, which are calculated, in technology, is all to calculate center with ripple.
The pattern structure of offset parameter is obtained, next the pattern structure can be imported into the photomask of product, then
Exposed by photoetching process in actual product, the overlay parameter so that feedback makes corrections obtains more preferable product overlay result.
As shown in Figure 7 and Figure 8, Fig. 7 and Fig. 8 is the front to back registration situation inside actual product, circular and strip difference
It is the rough schematic that actual product is aligned when layer pattern 6 and actual product front layer pattern 5.Wherein Fig. 7 is using not of the invention
Pattern structure carry out feedback correction alignment case, it can be seen that product interlayer misalignment.Fig. 8 is the figure using the present invention
Type structure carries out the alignment case after feedback correction, it can be seen that the actual product of circular configuration is seated strip when layer pattern 6
The center of actual product front layer pattern 5 of shape structure, product obtains preferable alignment.
In summary, the present invention provides a kind of lithographic optical formula overlay and measures pattern structure, at least includes：By intersecting vertically
X-axis and Y-axis is divided into and the first quartile area, the second quadrant area, third quadrant area, the fourth quadrant area that arrange successively；Wherein,
Pattern is arranged in the first direction in first quartile area and third quadrant area, and pattern is along second in the second quadrant area and fourth quadrant area
Direction is arranged；In each quadrant area pattern include front layer pattern and above the front layer pattern work as floor pattern, it is described
Front layer pattern and when layer pattern is spaced, and expiring when the total radical of the pattern of floor pattern and front layer pattern in each quadrant area
Sufficient 2n+1, n are the integer more than 0.The precision of measurement, decrement can be increased by measuring pattern structure using the overlay of the present invention
Error is surveyed, the current layer pattern for recycling the pattern structure offset parameter feedback correction of the present invention to make next time, so as to overcome
Made a variation caused by board error in processing procedure etc..
So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (10)
1. a kind of lithographic optical formula overlay measures pattern structure, it is characterised in that the measurement pattern structure at least includes：By hanging down
First quartile area that is that the X-axis and Y-axis directly intersected is divided into and arranging successively, the second quadrant area, third quadrant area, fourth quadrant
Area；
Wherein, pattern is arranged in the first direction in the first quartile area and the third quadrant area, the second quadrant area and
Pattern is arranged in a second direction in the fourth quadrant area；Pattern includes front layer pattern and before described in each quadrant area
Work as layer pattern above layer pattern, the front layer pattern and described when layer pattern is spaced, and the institute in each quadrant area
State when the total radical of pattern of layer pattern and the front layer pattern meets 2n+1, n is the integer more than 0.
2. lithographic optical formula overlay according to claim 1 measures pattern structure, it is characterised in that：The measurement pattern knot
Structure is located on the position of wafer Cutting Road.
3. lithographic optical formula overlay according to claim 2 measures pattern structure, it is characterised in that：The current pattern and
The shape of the front layer pattern is rectangle, and the length of the measurement pattern structure is less than or equal to 30 μm, width be less than or
Equal to 30 μm, to meet the wafer Cutting Road space use demand.
4. lithographic optical formula overlay according to claim 1 measures pattern structure, it is characterised in that：The first direction with
It is X-direction and the vertical angle of Y direction between the second direction.
5. lithographic optical formula overlay according to claim 1 measures pattern structure, it is characterised in that：In each quadrant area
In, the front layer pattern is even number root, described when layer pattern is odd number root.
6. lithographic optical formula overlay according to claim 1 measures pattern structure, it is characterised in that：In each quadrant area
In, the front layer pattern is odd number root, described when layer pattern is even number root.
7. lithographic optical formula overlay according to claim 1 measures pattern structure, it is characterised in that：In each quadrant area
In, described when each size of layer pattern is identical, each size of the front layer pattern is identical, the front layer pattern and institute
State when the line length of layer pattern is no more than 15 μm.
8. lithographic optical formula overlay according to claim 1 measures pattern structure, it is characterised in that：The first quartile area
Pattern and the third quadrant area pattern axisymmetricly, the pattern in the second quadrant area and the figure in the fourth quadrant area
Type is axisymmetricly.
9. a kind of method that lithographic optical formula overlay formed as described in any one of claim 1~8 measures pattern structure, it is special
Levy and be, methods described at least includes：
The front layer pattern, front layer pattern edge in the first quartile area and the third quadrant area are formed in front layer
The first direction arrangement, is arranged in the second quadrant area and the fourth quadrant area along the second direction；And
Working as above the front layer formed in layer it is described work as layer pattern, it is described when floor pattern is in the first quartile area and described
Arranged in third quadrant area along the first direction, along the second party in the second quadrant area and the fourth quadrant area
To arrangement, and the front layer pattern and described when layer pattern is spaced.
10. the method that lithographic optical formula overlay according to claim 9 measures pattern structure, it is characterised in that：Using light
Learn method for measurement and calculate overlay offset of the current pattern relative to the front layer pattern described in the measurement pattern structure.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117950279A (en) * | 2024-03-14 | 2024-04-30 | 粤芯半导体技术股份有限公司 | Method and device for measuring critical dimension of graph, electronic equipment and storage medium |
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| US20140065736A1 (en) * | 2012-09-06 | 2014-03-06 | Kla-Tencor Corporation | Device correlated metrology (dcm) for ovl with embedded sem structure overlay targets |
| US20160282730A1 (en) * | 2015-03-23 | 2016-09-29 | Renesas Electronics Corporation | Semiconductor device, method of manufacturing the same, and pattern overlay inspection method |
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| CN117950279A (en) * | 2024-03-14 | 2024-04-30 | 粤芯半导体技术股份有限公司 | Method and device for measuring critical dimension of graph, electronic equipment and storage medium |
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