CN107017274A - A kind of LED display modules and preparation method thereof - Google Patents
A kind of LED display modules and preparation method thereof Download PDFInfo
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- CN107017274A CN107017274A CN201710192858.6A CN201710192858A CN107017274A CN 107017274 A CN107017274 A CN 107017274A CN 201710192858 A CN201710192858 A CN 201710192858A CN 107017274 A CN107017274 A CN 107017274A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 88
- 238000000926 separation method Methods 0.000 claims abstract description 68
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 33
- 238000000151 deposition Methods 0.000 claims description 30
- 230000008021 deposition Effects 0.000 claims description 18
- 230000012010 growth Effects 0.000 claims description 18
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 239000000696 magnetic material Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims 1
- 230000035882 stress Effects 0.000 description 114
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 239000007771 core particle Substances 0.000 description 4
- 229910016920 AlzGa1−z Inorganic materials 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- -1 SiO2 Or SiNx etc. Chemical class 0.000 description 1
- 230000003679 aging effect Effects 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
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- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Abstract
The invention discloses a kind of LED display modules and preparation method thereof, including：Second semiconductor layer of some groups of the first conductivity types etched in the first semiconductor layer of the first conductivity type, active layer, stress control layer, stress layer, the first separation layer, the second separation layer, 3rd semiconductor layer of the second conductivity type, first conductive contact layer, the second conductive contact layer, electrode and the integrated circuit control panel including the contact that is electrically connected；The active layer is provided with some groups of active layer unit, and active layer unit is separated by side wall the first separation layer of formation, and the second semiconductor of first conductivity type is separated by side wall the second separation layer of formation, and adjacent second conductive contact layer；Stress layer, stress control layer and the first conductive contact layer are formed in the gap of first separation layer and the second separation layer；First conductive contact layer, the second conductive contact layer are connected with the contact that is electrically connected of integrated circuit control panel respectively.
Description
Technical field
The present invention relates to semiconductor photoelectric device field, particularly a kind of semiconductor LED display module and preparation method thereof.
Background technology
Now, light emitting diode（LED）, particularly iii-nitride light emitting devices are because of its higher luminous efficiency, common
Lighting field, which has been obtained, to be widely applied.The outer display screen technology of LED indoor at present in terms of stage, advertisement, sports equipment
It is widely applied.Current LED package dimension is in millimeter rank, and Pixel Dimensions are larger to cause resolution ratio and image quality poor.
The direction of the development of following LED display technique is the LED for realizing super-small, to obtain smaller light emitting pixel size, from
And obtain higher resolution ratio and image quality.Miniature light-emittingdiode based on nitride and arsenide semiconductor light emitting diode shows
Show（Micro-LED）Or nanoscale diode displaying（Nano-LED）With high brightness, low-power consumption, ultrahigh resolution, color
Color saturation degree is high, ageing properties are superior, epitaxial wafer technology maturation the advantages of, can directly utilize the outer of current ripe mass production
Prolong the wafer technology of epitaxy, with the advantage contended with the generation semiconductor display technology such as OLED, QLED.
Traditional miniature LED（Micro-LED）Making need to be transferred to microcomponent into reception substrate from donor substrate
On, technique is complex cumbersome, and yields is low.The miniature LED of tradition typically using the microchip for being first fabricated to many or
After element, retransfer and be integrated on circuit board to be fabricated to LED display.Traditional Micro-LED because shift and encapsulate
Size and precision problem, manufacture craft are difficult to the Nano-LED for extending to Nano grade, cause chip pixel size to be difficult into one
Step reduces.
The content of the invention
In order to overcome above-mentioned technical problem, it is an object of the invention to：The micron-nanometer level for providing a kind of wafer scale is partly led
Body LED display modules and preparation method thereof, directly extension can make the RGBs of different emission wavelengths（RGB）Core particles are in same crystalline substance
On disk, it is not necessary to which pre-production is convenient into reception substrate, fabrication processing is transferred to after microchip, and can be in wafer
Rank control RGB arbitrary arrangement and any RGB wavelength combinations, with broad wavelength and RGB combination performance of control.
By making the growth templates of stress control layer and stress layer, then, the direct extension life on growth templates
The active layer of long same composition and thickness, realizes the RGB core particles extension of different emission wavelengths in same wafer by Stress Control
Piece, RGB permutation and combination and any band combination can be controlled in micron-nanometer rank, makes the resolution of semiconductor LED display module
Rate reaches that micron order, to nano level pixel scale, can cover Micro-LED and Nano-LED size range, so as to make height
Clearly, high image quality semiconductor LED display module.Or, pass through chip manufacturing technology system on the epitaxial wafer of traditional semiconductor LED
Make stress control layer and stress layer, the RGB of the stress acquisition controllable wavelength by controlling active layer semiconductor LED shows
Show component, realize and make micron order to nano level pixel scale semiconductor LED display module.
According to the Part I of the present invention：A kind of micron-nanometer level semiconductor LED display modules of wafer scale, including：By
First semiconductor layer of the first conductivity type of the second semiconductor layer composition of some groups of the first conductivity types, active layer, Stress Control
Layer, stress layer, the first separation layer, the second separation layer, the 3rd semiconductor layer of the second conductivity type, the first conductive contact layer,
Second conductive contact layer, electrode and the integrated circuit control panel including the contact that is electrically connected；The active layer is provided with some groups
Active layer unit, active layer unit is separated by side wall the first separation layer of formation, and the second the half of first conductivity type leads
Body is separated by side wall the second separation layer of formation, and adjacent second conductive contact layer；In first separation layer and second
The gap of separation layer forms stress layer, stress control layer and the first conductive contact layer；First conductive contact layer, second
Conductive contact layer is connected with the contact that is electrically connected of integrated circuit control panel respectively.
Further, the group number of the second semiconductor layer of first conductivity type is N groups, preferably 3N groups, and wherein N is derived from so
Number and N >=1；The group number of the active layer unit is N groups, preferably 3N groups, and wherein N takes natural number and N >=1；Group number can also basis
Need to be made；The RGB of the controllable wavelength of the active layer formation of 3N groups（RGB）The semiconductor LED of micron-nanometer level
Display module, R/G/B composition can be combined, but be not limited.
Further, the quantum-well materials of the active layer is same component and thickness identical MQW.
Further, the material of the active layer SQW is InxGa1-xN/GaN MQWs, InxGa1-xN/AlInGaN
MQW or AlyGa1-yN/AlzGa1-zN MQWs, wherein 0<x,y,z<1, the logarithm of described MQW is less than 20
It is right.
Further, the stress layer is different thermal conductivity factor materials or magnetoelastic material, when stress layer
During for magnetoelastic material, stress control layer is magnetic material, and controllable magnetic field can be produced under electric current injection, and proof stress is made
Stress needed for being produced with layer, emission wavelength is controlled by stress in active layer；When stress layer is led for difference
During the material of hot coefficient, stress control layer is thermal resistance material, and by controlling the power of the controllable heating of Injection Current, generation can
The temperature of control, temperature range is 50 ~ 500 DEG C, different thermal conductivity factor materials is produced controllable stress by adjusting different temperatures,
So as to the stress intensity of adjustable active layer, emission wavelength is controlled in active layer by stress.
Further, the stress control layer and stress layer are used to control the differently stressed effect of active layer, with
Exemplified by the active layer unit of 3N groups, by controlling first group, second group, the 3rd group（Common 3N groups）Stress control layer input electricity
Stream, regulation and control stress layer produces the first stress, the second stress, tertiary stress, make first group of active layer send wavelength for 580 ~
The feux rouges of 680nm scopes（R）, second group of active layer send wavelength be 480 ~ 580nm scopes green-yellow light（Y/G）, the 3rd group has
Active layer sends the blue light of wavelength 380 ~ 480nm scopes（B）, so as to form the half of the micron-nanometer level of the controllable wavelength of wafer scale
Conductor LED display modules, without be fabricated to after many core particles shifted, be bonded again, it is integrated.
Further, first separation layer starts from the upper surface of active layer, and terminate at the first conductivity type the second half lead
The lower surface of body layer, second separation layer starts from the lower surface of active layer, terminates at the second semiconductor layer of the first conductivity type
Lower surface, form gap between the first separation layer and the second separation layer, width is 0.5 ~ 5 μm.
Further, first separation layer, the second semiconductor layer, stress control to the first conductivity type of space between adjacent
Preparative layer and stress layer.
Further, first separation layer, the material of the second separation layer are insulation oxide or nitride, including SiO2
Or SiNx etc., first semiconductor, the second semiconductor, the 3rd semi-conducting material are that iii-v or II-VI group compound are partly led
Body material.
According to the Part II of the present invention：A kind of making side of the micron-nanometer level semiconductor LED display modules of wafer scale
Method, it comprises the following steps：
Step（1）：On the first substrate, the first semiconductor layer of the conductivity type of epitaxial growth first；
Step（2）：First semiconductor layer of the first conductivity type is etched to the second semiconductor layer of some groups of the first conductivity type,
Its separation layer of side wall deposition second；The second separation layer is deposited between the second semiconductor layer of the first adjacent conductivity type, every
Separate out some groups of extension pregrown region；
Step（3）：In the gap of first separation layer and the second separation layer, deposition stress key-course and stress layer are made
For growth templates；
Step（4）：In growth templates Epitaxial growth active layer；
Step（5）：The 3rd semiconductor layer and contact layer of the conductivity type of epitaxial growth second successively on active layer；
Step（6）：On the contact layer, the second substrate is bonded, and peels off the first substrate, expose the first conductivity type the first half lead
The lower surface of body layer, the first separation layer, the second separation layer and stress control layer；
Step（7）：On stress control layer, depositing first conductive contact layer；
Step（8）：On the second semiconductor layer of the first conductivity type, depositing second conductive contact layer；
Step（9）：First conductive contact layer is connected with the contact that is electrically connected on integrated circuit control panel, passes through integrated circuit control
The input current of plate proof stress key-course, the stress that regulation and control stress layer is produced, makes active layer unit send different-waveband
Wavelength；Second conductive contact layer is connected with the contact that is electrically connected on integrated circuit control panel, the active layer unit of independent control
It is luminous；
Step（10）：The second substrate is removed, on the contact layer square depositing electrode, so that be fabricated to the controllable wavelength of wafer scale
Micron-nanometer level semiconductor LED display modules.
Further, the stress layer can select different thermal conductivity factor materials or magnetoelastic material, work as stress
When active layer is magnetoelastic material, stress control layer is magnetic material, can produce controllable magnetic field under electric current injection, control
Stress layer produces required stress, then, and emission wavelength is controlled in active layer by stress；When the stress
When layer is the material of different thermal conductivity factors, stress control layer is thermal resistance material, by controlling the controllable heating of Injection Current
Power, produces controllable temperature, and temperature range is 50 ~ 500 DEG C, and different thermal conductivity factor materials are produced by adjusting different temperatures
Controllable stress, so that the stress intensity of adjustable active layer, then controls emission wavelength by stress in active layer.
According to the Part III of the present invention：A kind of making side of the micron-nanometer level semiconductor LED display modules of wafer scale
Method, it comprises the following steps：
Step（1）：First semiconductor layer of the conductivity type of extension first successively on the first substrate, active layer, the second conductivity type
3rd semiconductor layer and contact layer；
Step（2）：Side, is bonded the second substrate, and peel off the first substrate on the contact layer；
Step（3）：Active layer is etched to from the first semiconductor layer of the first conductivity type, some groups of active layer is etched, and
The separation layer of side wall deposition second；The second the half of some groups of the first conductivity type are etched in the first semiconductor layer of the first conductivity type
Conductor, and in its separation layer of side wall deposition first；
Step（4）：In the gap of the first separation layer and the second separation layer, deposition stress active layer；
Step（5）：On stress layer, deposition stress key-course；
Step（6）：On stress control layer, depositing first conductive contact layer；
Step（7）：On the second semiconductor layer of the first conductivity type, depositing second conductive contact layer；
Step（8）：First conductive contact layer is connected with the contact that is electrically connected on integrated circuit control panel, passes through integrated circuit control
The input current of plate proof stress key-course, the stress that regulation and control stress layer is produced, makes active layer unit send different-waveband
Wavelength；Second conductive contact layer is connected with the contact that is electrically connected on integrated circuit control panel, the active layer unit of independent control
It is luminous；
Step（9）：Remove the second substrate, on the contact layer square depositing electrode, be fabricated to the micron of the controllable wavelength of wafer scale-
Nano level semiconductor LED display module.
Further, the stress layer can select different thermal conductivity factor materials or magnetoelastic material, work as stress
When active layer is magnetoelastic material, stress control layer is magnetic material, can produce controllable magnetic field under electric current injection, control
Stress layer produces required stress, then, and stress controls emission wavelength in active layer；When stress layer is
During the material of different thermal conductivity factors, stress control layer is thermal resistance material, by controlling the power of the controllable heating of Injection Current,
Controllable temperature is produced, temperature range is 50 ~ 500 DEG C, make different thermal conductivity factor materials generations controllable by adjusting different temperatures
Stress so that the stress intensity of adjustable active layer, then controls emission wavelength by stress in active layer.
Brief description of the drawings
Fig. 1 ~ Figure 10 is the LED display modules and its making step schematic diagram of the embodiment of the present invention 1.
The LED display modules and its making step schematic diagram of Figure 11 ~ Figure 19 embodiment of the present invention 2.
Explanation is indicated in figure：101：First substrate；102：First semiconductor layer of the first conductivity type；103：First conductivity type
The second semiconductor layer；104：Second separation layer；105：First separation layer；106：Stress control layer；107：Stress layer；
108：Active layer；109：3rd semiconductor layer of the second conductivity type；110：Contact layer；111：Second substrate；112（112a、
112b、112c）：First conductive contact layer；113（113a、113b、113c）：Second conductive contact layer；114：Integrated circuit is controlled
Plate；115：Transparency conducting layer；116：Electrode；201：First substrate；202：First semiconductor layer of the first conductivity type；203：It is active
Layer；204：3rd semiconductor layer of the second conductivity type；205：Contact layer；206：Second substrate；207：Second separation layer；208：The
Second semiconductor layer of one conductivity type；209：First separation layer；210：Stress layer；211：Stress control layer；212（212a、
212b、212c）：First conductive contact layer；213（213a、213b、213c）：Second conductive contact layer；214：Integrated circuit is controlled
Plate；215：Transparency conducting layer；216：Electrode.
Embodiment：
Traditional miniature LED（Micro-LED）Making need microcomponent being transferred to from donor substrate on reception substrate, work
Skill is complex cumbersome, and yields is low.The miniature LED of tradition is typically using the microchip or element for being first fabricated to many
Afterwards, retransfer and be integrated on circuit board to be fabricated to LED display.The micron for a kind of wafer scale that the present invention is provided-receive
Meter level semiconductor LED display module and preparation method thereof.
By making the growth templates of stress control layer and stress layer, then, in growth templates Epitaxial growth phase
With component and the active layer of thickness, realize that the RGB core particles extensions of different emission wavelengths, can in same wafer by Stress Control
RGB permutation and combination and any band combination are controlled in micro-nano scale rank, the resolution ratio of LED display modules is reached
Micron order can cover Micro-LED and Nano-LED size range to nano level pixel scale, so as to make high definition, height
Image quality semiconductor LED display module.
Pass through chip manufacturing fabrication techniques stress control layer and stress on the epitaxial wafer of traditional semiconductor LED
Layer, the RGB of the stress acquisition controllable wave band by controlling active layer semiconductor LED display module, realizes and makes micron order
To nano level pixel scale semiconductor LED display module.
Embodiment 1
As shown in Fig. 1 ~ Figure 10, the present embodiment provide a kind of the micron-nanometer level semiconductor LED display modules of wafer scale and its
Preparation method, including：
As shown in figure 1, step（1）：On the first substrate 101, the first semiconductor layer 102 of the conductivity type of epitaxial growth first；
As shown in Fig. 2 step（2）：First semiconductor layer 102 of the first conductivity type is etched to the of the first conductivity type of 3N groups
Two semiconductor layers 103, its both sides side wall（But it is not limited or four the week side of boss walls）Deposit the second separation layer of 6N groups
104；The first separation layer 105 is deposited between second semiconductor layer of 3N groups, the RGB pregrowns region of 3N groups is isolated；
As shown in figure 3, step（3）：The gap between the second separation layer 104 of 6N groups and the first separation layer 105 of 3N groups, successively
Deposition stress key-course 106 and stress layer 107, as growth templates, wherein gap width is 0.5 ~ 5 μm, stress
Layer can select different thermal conductivity factor materials or magnetoelastic material, when stress layer choosing magnetoelastic material, stress
Key-course selects magnetic material, and controllable magnetic field can be produced under electric current injection, and proof stress active layer produces required stress,
Then, emission wavelength is controlled in active layer by stress；
As shown in figure 4, step（4）：By deposition stress key-course 106 and the growth templates of stress layer 107, MOCVD is come into
Reative cell, using the growing method of metal organic chemical vapor deposition, grows the active layer 108 of the active layer unit of 3N groups；It is described
The quantum-well materials of active layer is same component and thickness identical MQW；The material of the active layer SQW is
InxGa1-xN/GaN MQWs, InxGa1-xN/AlInGaN MQWs or AlyGa1-yN/AlzGa1-zN MQWs, wherein 0
<x,y,z<1, the logarithm of described MQW is less than 20 pairs, and the preferably logarithm of MQW is 8 pairs；
As shown in figure 5, step（5）：In the top of active layer 108, using the 3rd half of the conductivity types of MOCVD successively epitaxial growth second the
Conductor layer 109 and contact layer 110；
As shown in fig. 6, step（6）：In the top of contact layer 110, the second substrate 111 is bonded, and peels off the first substrate 101, it is exposed
Go out under the first semiconductor layer 103, the second separation layer 104, the first separation layer 105 and the stress control layer 106 of the first conductivity type
Surface；
As shown in fig. 7, step（7）：In the lower section of the stress control layer 106 of 3N groups, the first conductive contact layer 112 of 3N groups is deposited
（112、112b、112c）；
As shown in figure 8, step（8）：Below the second semiconductor layer 103 of 3N groups, the second conductive contact layer 113 of 3N groups is deposited
（113a、113b、113c）；
As shown in figure 9, step（9）：First conductive contact layer 112（112、112b、112c）Respectively with integrated circuit control panel 114
On be electrically connected contact 1,3,5 connection, by integrated circuit control panel can first group of independent control, second group, the 3rd group（Common 3N
Group）Stress control layer input current, regulation and control stress layer produce the first stress, the second stress, tertiary stress respectively, make
First group of active layer sends the feux rouges that wavelength is 580 ~ 680nm scopes, and second group of active layer sends wavelength for 480 ~ 580nm scopes
Green-yellow light, the 3rd group of active layer send the blue light of wavelength 380 ~ 480nm scopes；Second conductive contact layer 113（113a、113b、
113c）Be connected respectively with the contact 2,4,6 that is electrically connected on integrated circuit control panel 114, first group of independent control, second group, the 3rd
Group（Common 3N groups）Active layer it is luminous；
As shown in Figure 10, step（10）：The second substrate is removed, in the disposed thereon transparency conducting layer 115 of contact layer 110 and electrode
116, so that the micron-nanometer level semiconductor LED display modules of the controllable RGB wavelength of wafer scale are fabricated to, can from Figure 10
Know, the first separation layer 105 starts from the upper surface of active layer 108, terminate at the following table of the second semiconductor layer 103 of the first conductivity type
Face, second separation layer 104 starts from the lower surface of active layer 108, terminates at the second semiconductor layer 103 of the first conductivity type
Lower surface, wherein the first separation layer 105, the second semiconductor layer 103, stress control layer to the first conductivity type of space between adjacent
106 and stress layer 107.
Embodiment 2
As shown in Figure 11 ~ 19, the present embodiment provide a kind of the micron-nanometer level semiconductor LED display modules of wafer scale and its
Preparation method, including：
As shown in figure 11, step（1）：Using traditional MOCVD epitaxy method, on the first substrate 201, extension first is led successively
First semiconductor layer 202 of electric type, active layer 203, the 3rd semiconductor layer 204 and contact layer 205 of the second conductivity type；It is described
The quantum-well materials of active layer is same component and thickness identical MQW；The material of the active layer SQW is
InxGa1-xN/GaN MQWs, InxGa1-xN/AlInGaN MQWs or AlyGa1-yN/AlzGa1-zN MQWs, wherein 0
<x,y,z<1, the logarithm of described MQW is less than 20 pairs, and the preferably logarithm of MQW is 8 pairs；
As shown in figure 12, step（2）：In the top of contact layer 205, the second substrate 206 is bonded, and peel off the first substrate；
As shown in figure 13, step（3）：From the first semiconductor layer 202 of the first conductivity type, active layer 203 is etched to, so as to etch
Go out the active layer unit of 3N groups, and in the second separation layer of side wall deposition 207 of active layer unit；The first the half of the first conductivity type
Conductor layer 202 etches the second semiconductor layer 208 of the first conductivity type of 3N groups, and in its first separation layer of side wall deposition 209；
As shown in figure 14, step（4）：The gap between the first separation layer 209 and the second separation layer 207, width is 0.5 ~ 5 μm,
Deposit the stress layer 210 of 3N groups, stress layer choosing different thermal conductivity factor materials or magnetoelastic material；
As shown in figure 15, step（5）：In the stress layer of the 3N groups in the second separation layer 207 and the gap of the first separation layer 209
210 tops, deposition stress key-course 211；When stress layer is magnetoelastic material, stress control layer is magnetic material,
Can produce controllable magnetic field under electric current injection, proof stress active layer produce needed for stress, then, by stress in
Active layer controls emission wavelength；When stress layer is the material of different thermal conductivity factors, stress control layer is thermal resistance
Material, by controlling the power of the controllable heating of Injection Current, produces controllable temperature, temperature range is 50 ~ 500 DEG C, is passed through
Adjustment different temperatures makes different thermal conductivity factor materials produce controllable stress, so that the stress intensity of adjustable active layer, then
By stress emission wavelength is controlled in active layer；
As shown in figure 16, step（6）：Below 3N groups stress control layer 211, the first conductive contact layer 212 of 3N groups is deposited
（212a、212b、212c）；
As shown in figure 17, step（7）：Led in the top of the second semiconductor layer 208 of the conductivity type of 3N groups first, the second of deposition 3N groups
Electric contacting layer 213（213a、213b、213c）；
As shown in figure 18, step（8）：First conductive contact layer 212 of 3N groups（212a、212b、212c）Respectively with integrated circuit
On control panel 214 be electrically connected contact 1,3,5 connection, by integrated circuit control panel can first group of independent control, second group, the 3rd
Group（Common 3N groups）Stress control layer input current, regulation and control stress layer produce the first stress, the second stress, the 3rd should
Power, makes first group of active layer send the feux rouges that wavelength is 580 ~ 680nm scopes, second group of active layer send wavelength for 480 ~
The green-yellow light of 580nm scopes, the 3rd group of active layer sends the blue light of wavelength 380 ~ 480nm scopes；First conductivity type of 3N groups
Second semiconductor layer 208 passes through the second conductive contact layer 213（213a、213b、213c）Respectively with integrated circuit control panel 214
The be electrically connected connection of contact 2,4,6, first group of independent control, second group, the 3rd group（Common 3N groups）Active layer it is luminous；
As shown in figure 19, step（9）：The second substrate is removed, in the disposed thereon transparency conducting layer 215 of contact layer 205 and electrode
216, it is fabricated to the micron-nanometer level semiconductor LED display modules of the controllable RGB wavelength of wafer scale.
Embodiment of above is merely to illustrate the present invention, and is not intended to limit the present invention, those skilled in the art,
In the case of not departing from the spirit and scope of the present invention, various modifications and variation can be made to the present invention, thus it is all equivalent
Technical scheme fall within scope of the invention, scope of patent protection of the invention should regard Claims scope and limit.
Claims (10)
1. a kind of LED display modules, including：The first conductivity type being made up of the second semiconductor layer of some groups of the first conductivity types
First semiconductor layer, active layer, stress control layer, stress layer, the first separation layer, the second separation layer, the second conductivity type
3rd semiconductor layer, the first conductive contact layer, the second conductive contact layer, electrode and the integrated circuit control including the contact that is electrically connected
Plate；The active layer is provided with some groups of active layer unit, and active layer unit is divided by side wall the first separation layer of formation
Every the second semiconductor layer of first conductivity type is separated by side wall the second separation layer of formation, and adjacent second conduction
Contact layer；It is conductive that stress layer, stress control layer and first are formed in the gap of first separation layer and the second separation layer
Contact layer；First conductive contact layer, the second conductive contact layer are connected with the contact that is electrically connected of integrated circuit control panel respectively.
2. a kind of LED display modules according to claim 1, it is characterised in that：The second the half of first conductivity type lead
The group number of body layer is 3N groups, and the group number of the active layer unit is 3N groups, and wherein N takes natural number and N >=1.
3. a kind of LED display modules according to claim 1, it is characterised in that：The stress layer is different heat conduction
Coefficient material or magnetoelastic material.
4. a kind of LED display modules according to claim 3, it is characterised in that：When stress layer is mangneto bullet
Property material when, stress control layer is magnetic material, and controllable magnetic field is produced under electric current injection, and proof stress active layer produces institute
The stress needed, emission wavelength is controlled by stress in active layer.
5. a kind of LED display modules according to claim 3, it is characterised in that：When stress layer is led for difference
During hot coefficient material, stress control layer is thermal resistance material, and the power of heating is controlled under electric current injection, controllable temperature is produced
Degree, makes different thermal conductivity factor materials produce controllable stress by adjusting temperature, is controlled by stress in active layer luminous
Wavelength.
6. a kind of LED display modules according to claim 1, it is characterised in that：First separation layer starts from active layer
Upper surface, terminate at the lower surface of the second semiconductor layer of the first conductivity type, second separation layer is started under active layer
Surface, terminates at the lower surface of the second semiconductor layer of the first conductivity type.
7. a kind of LED display modules according to claim 1, it is characterised in that：First separation layer and the second isolation
Gap is formed between layer, width is 0.5 ~ 5 μm.
8. a kind of LED display modules according to claim 1, it is characterised in that：First separation layer, to separate phase
The second semiconductor layer, stress control layer and the stress layer of the first adjacent conductivity type.
9. a kind of preparation method of LED display modules, it comprises the following steps：
Step（1）：On the first substrate, the first semiconductor layer of the conductivity type of epitaxial growth first；
Step（2）：First semiconductor layer of the first conductivity type is etched to the second semiconductor layer of some groups of the first conductivity type,
Its separation layer of side wall deposition second；The first separation layer is deposited between the second semiconductor layer of the first adjacent conductivity type, every
Separate out some groups of extension pregrown region；
Step（3）：In the gap of first separation layer and the second separation layer, deposition stress key-course and stress layer are made
For growth templates；
Step（4）：In growth templates Epitaxial growth active layer；
Step（5）：The 3rd semiconductor layer and contact layer of the conductivity type of epitaxial growth second successively on active layer；
Step（6）：On the contact layer, the second substrate is bonded, and peels off the first substrate, expose the first conductivity type the first half lead
The lower surface of body layer, the first separation layer, the second separation layer and stress control layer；
Step（7）：On stress control layer, depositing first conductive contact layer；
Step（8）：On the second semiconductor layer of the first conductivity type, depositing second conductive contact layer；
Step（9）：First conductive contact layer is connected with the contact that is electrically connected on integrated circuit control panel, passes through integrated circuit control
The input current of plate proof stress key-course, the stress that regulation and control stress layer is produced, makes active layer unit send different-waveband
Wavelength；Second conductive contact layer is connected with the contact that is electrically connected on integrated circuit control panel, the active layer unit of independent control
It is luminous；
Step（10）：The second substrate is removed, on the contact layer square depositing electrode, so as to be fabricated to LED display modules.
10. a kind of preparation method of LED display modules, it comprises the following steps：
Step（1）：First semiconductor layer of the conductivity type of extension first successively on the first substrate, active layer, the second conductivity type
3rd semiconductor layer and contact layer；
Step（2）：Side, is bonded the second substrate, and peel off the first substrate on the contact layer；
Step（3）：Active layer is etched to from the first semiconductor layer of the first conductivity type, some groups of active layer unit is etched,
And in the separation layer of side wall deposition second；The of some groups of the first conductivity type is etched in the first semiconductor layer of the first conductivity type
Two semiconductors, and in its separation layer of side wall deposition first；
Step（4）：In the gap of the first separation layer and the second separation layer, deposition stress active layer；
Step（5）：On stress layer, deposition stress key-course；
Step（6）：On stress control layer, depositing first conductive contact layer；
Step（7）：On the second semiconductor layer of the first conductivity type, depositing second conductive contact layer；
Step（8）：First conductive contact layer is connected with the contact that is electrically connected on integrated circuit control panel, passes through integrated circuit control
The input current of plate proof stress key-course, the stress that regulation and control stress layer is produced, makes active layer unit send different-waveband
Wavelength；Second conductive contact layer is connected with the contact that is electrically connected on integrated circuit control panel, the active layer unit of independent control
It is luminous；
Step（9）：The second substrate is removed, square depositing electrode, is fabricated to LED display modules on the contact layer.
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| CN101711405A (en) * | 2007-05-31 | 2010-05-19 | 无限科技全球公司 | Method of manufacturing addressable and static electronic displays, power generating or other electronic apparatus |
| US20100317132A1 (en) * | 2009-05-12 | 2010-12-16 | Rogers John A | Printed Assemblies of Ultrathin, Microscale Inorganic Light Emitting Diodes for Deformable and Semitransparent Displays |
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