TWI523262B - Semiconductor light emitting device having multi-cell array and method for manufacturing the same - Google Patents

Description

Semiconductor light emitting device with multi-cell array and method of manufacturing same

The present invention relates to a semiconductor light-emitting device, and more particularly to a semiconductor light-emitting device in which a plurality of light-emitting units are arranged and a method of manufacturing the same.

In general, semiconductor light-emitting diodes (LEDs) have the advantage of power, efficiency and reliability in terms of illumination. Therefore, the semiconductor light-emitting diode system has been vigorously developed into a high-power, high-efficiency light source for backlight units of various illumination devices and display devices. Commercialization of such semiconductor light-emitting diodes as illumination sources must increase their luminous efficiency and reduce their product cost while increasing their power to the desired level.

However, a high power light-emitting diode using a high rated current has a low luminous efficiency due to a high current density compared to a low power light emitting diode using a low rated current. Specifically, if the rated current is increased to obtain a high luminous flux in the same area of the light-emitting diode wafer to obtain high power, the luminous efficiency may be attenuated by the increased current density. In addition, the attenuation of luminous efficiency is accelerated by the thermal energy generated by the device.

In order to solve these problems, a high-power light-emitting device has been disclosed in which a plurality of low-power light-emitting diode wafers are bonded to a high-power light-emitting device in a package degree, and the wafers are bonded by wire bonding. According to this method, since a low-power light-emitting diode wafer having a relatively small size is used, the current density is further reduced as compared with the use of a high-power light-emitting diode wafer having a large size, and thus the overall light efficiency is improved. However, when the number of wire bonds is increased, the manufacturing cost is increased and the manufacturing process becomes complicated. In addition, the failure rate is also increased by the wire open condition. When a wafer is connected by wires, it is difficult to implement a complicated series-parallel interconnection structure. Since the space is occupied by the wires, it is difficult to achieve miniaturization of the package. In addition, the number of wafers that can be mounted to a single package is also limited.

One aspect of the present invention provides a semiconductor light emitting device which can improve light efficiency by increasing a current density per unit area, and can emit white light having high color rendering.

One aspect of the present invention also provides a semiconductor light-emitting device which can obtain high-efficiency white light without using a phosphor and a method of manufacturing the same.

One aspect of the present invention also provides a semiconductor light emitting device that ensures a sufficient light emitting area while providing a plurality of light emitting units to the semiconductor light emitting device.

According to an aspect of the present invention, a semiconductor light emitting device includes: a substrate; a plurality of light emitting units arranged on the substrate, each of the light emitting units including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and a first An active layer between a conductive semiconductor layer and a second conductive semiconductor layer to emit blue light; and an interconnect structure electrically connecting at least one of the first conductive semiconductor layer and the second conductive semiconductor layer of the light emitting unit And at least one of the first conductive semiconductor layer and the second conductive semiconductor layer to the other light emitting unit; and the light converting element is formed in at least a portion of the light emitting region defined by the plurality of light emitting units, The light conversion element includes at least one of a red light conversion element having a red light conversion material and a green light conversion element having a green light conversion material.

The light conversion element does not need to be formed in a part of the light-emitting area.

The light conversion element can include at least one of a phosphor and a quantum dot.

The first conductive semiconductor layer of at least one of the plurality of light emitting cells may be electrically connected to the second conductive semiconductor layer of the other light emitting cell.

The first conductive semiconductor layer of at least one of the plurality of light emitting cells may be electrically connected to the first conductive semiconductor layer of the other light emitting cell.

The second conductive semiconductor layer of at least one of the plurality of light emitting cells may be electrically connected to the second conductive semiconductor layer of the other light emitting cell.

The first conductive type semiconductor layer of the plurality of light emitting units may be integrally formed.

One of the red light conversion element and the green light conversion element may be formed on each of the light emitting units.

One of the red light conversion element and the green light conversion element may be integrally formed with respect to two or more of the plurality of light emitting units.

The light conversion element can be formed along the surface of the light emitting unit.

The light conversion element may include a red light conversion element and a green light conversion element, and the plurality of light emitting units may be divided into: a red group including a red light conversion element formed in one or more of the units; a green group including a green light conversion The element is formed in one or more of the units; and the blue group includes one or more units in which the blue light conversion element is formed, and the semiconductor light emitting device may further include a respective connection red group, green group, and blue Three pairs of cushions for the group.

The current applied to the red group, the green group, and the blue group via the pad can be independently controlled.

According to another aspect of the present invention, a semiconductor light emitting device includes: a substrate; a plurality of light emitting units arranged on the substrate, each of the light emitting units including the first conductive type semiconductor layer, the second conductive type semiconductor layer, and the An active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer to emit blue light; and an interconnect structure to electrically connect at least one of the first conductive type semiconductor layer and the second conductive type semiconductor layer of the light emitting unit Connecting at least one of the first conductive type semiconductor layer and the second conductive type semiconductor layer of the other light emitting unit; and the light converting element is formed in at least a portion of the light emitting area defined by the plurality of light emitting units The light conversion element includes at least one of a light conversion material and a green light conversion material, wherein the light conversion element is divided into a plurality of groups having different mixing ratios of at least one of a red light conversion material and a green light conversion material.

According to another aspect of the present invention, a semiconductor light emitting device includes: a package substrate; a plurality of multi-wafer devices arranged on the package substrate, each multi-chip device including a first conductive type semiconductor layer and a second conductive type semiconductor And an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer to emit blue light; and the interconnect structure is configured to at least the first conductive semiconductor layer and the second conductive semiconductor layer of the light emitting unit One of the first conductive type semiconductor layer and the second conductive type semiconductor layer electrically connected to the other light emitting unit; and the plurality of light converting elements are disposed on the light path of the multi-chip device, and the light converting element At least one of a red light conversion material and a green light conversion material, wherein the light conversion element is divided into a plurality of groups having different mixing ratios of at least one of a red light conversion material and a green light conversion material.

The light conversion element may further include a yellow light conversion material, and the light conversion element is divided into a plurality of groups having different mixing ratios of at least one of a red light conversion material, a green light conversion material, and a yellow light conversion material.

The semiconductor light emitting device can further include a plurality of pads connected to a plurality of groups.

The current applied to the plurality of groups by the plurality of pads can be separately controlled.

The light converting element can include a barrier element, and the interior of the barrier element can be filled with a light converting material.

The barrier element can comprise the same material as the light converting material.

The barrier element can be formed of the same material as the rest of the interior of the filled light conversion element.

According to another aspect of the present invention, a semiconductor light emitting device includes: a substrate; a plurality of light emitting units arranged on the substrate, each of the light emitting units including the first conductive type semiconductor layer, the second conductive type semiconductor layer, and the An active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and an interconnect structure electrically connecting at least one of the first conductive type semiconductor layer and the second conductive type semiconductor layer of the light emitting unit to another light emitting At least one of the first conductive semiconductor layer and the second conductive semiconductor layer, wherein a part of the light emitting unit emits red light, a part of the light emitting unit emits green light, and the other light emitting unit emits blue light.

The semiconductor light emitting device may further include a base layer formed between the substrate and the first conductive type semiconductor layer and connected to the first conductive type semiconductor layer of the light emitting unit.

The base layer may be formed of a first conductive type semiconductor material.

The base layer may be formed of an undoped semiconductor material.

The first conductive type semiconductor layer of the light emitting unit may be integrally formed.

According to another aspect of the present invention, a method of fabricating a semiconductor light emitting device includes: continuously growing a first conductive type semiconductor layer, a first active layer, and a second conductive type semiconductor on a first region of a substrate Forming a first light emitting structure; forming a second light emitting structure by continuously growing the first conductive semiconductor layer, the second active layer, and the second conductive semiconductor layer on the second region of the substrate; in the third region of the substrate Forming a third light emitting structure by continuously growing the first conductive type semiconductor layer, the third active layer, and the second conductive type semiconductor layer; and forming an interconnect structure to electrically connect the first light emitting structure to the third light emitting structure Wherein one of the first active layer to the third active layer emits red light, the other active layer emits green light, and the remaining active layers emit blue light.

Before forming the first light emitting structure, the method may further include forming a cap layer having a first opening region on the substrate, wherein the first light emitting structure is formed in the first opening region.

Before forming the second light emitting structure, the method may further include forming a cap layer having a second opening region on the substrate, wherein the second light emitting structure is formed in the second opening region.

Before forming the third light emitting structure, the method may further include forming a cap layer having a third opening region on the substrate, wherein the third light emitting structure is formed in the third opening region.

The first to third light emitting structures may not necessarily be in contact with each other.

The method may further include forming a base layer on the substrate before forming the first to third light emitting structures.

The base layer may be formed of a first conductive type semiconductor material.

The base layer may be formed of an undoped semiconductor layer.

The process of growing the first conductive type semiconductor layer may be a process of re-growing the first conductive type semiconductor layer on the base layer.

According to another aspect of the present invention, a method of fabricating a semiconductor light emitting device includes: growing a first conductive semiconductor layer on a substrate; growing a first in a first region to a third region of the first conductive semiconductor layer Active layer to third active layer; growing a second conductive semiconductor layer to cover the first active layer to the third active layer; forming a first light emitting structure to a third light emitting structure by removing a portion of the second conductive type semiconductor layer Having leaving the second conductive layer to the first active layer to the third active layer; and forming an interconnect structure to electrically connect the first to third light emitting structures, wherein the first active layer One of the three active layers emits red light, the other active layer emits green light, and the other active layers emit blue light.

The forming of the first to third light emitting structures may include removing a portion of the first conductive semiconductor layer such that the first conductive semiconductor layer corresponding to the first active layer to the third active layer remains.

According to another aspect of the present invention, a semiconductor light emitting device includes: a plurality of light emitting cells arranged on a conductive substrate, each of the light emitting cells including a first conductive semiconductor layer, a second conductive semiconductor layer, and formed on An active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the second conductive semiconductor layer is directed to the conductive substrate and electrically connected to the conductive substrate; and the interconnect structure The first conductive semiconductor layer of the at least one light emitting unit is electrically connected to the first conductive semiconductor layer of the other light emitting unit.

The semiconductor light emitting device may further include a reflective metal layer formed between the conductive substrate and the plurality of light emitting units.

The interconnect structure can be formed of a metal.

A portion of the interconnect structure formed on at least the top surface of the first conductive semiconductor layer may be formed of a transparent conductive material.

The semiconductor light emitting device may further include a barrier layer formed between the conductive substrate and the plurality of light emitting units.

The isolation layer is electrically connected to the second conductive type semiconductor layer of the light emitting unit.

A plurality of light emitting units can be electrically connected in parallel.

Exemplary embodiments of the present invention will be described in detail with the accompanying drawings. However, the invention may be embodied in many different forms and should not be limited to the embodiments disclosed herein. Rather, the embodiments are provided so that this disclosure will be thorough and complete, and the scope of the invention is well known to those skilled in the art. In the drawings, the thickness of layers and regions are exaggerated for clarity. Similar component symbols in the figures define similar components, so their description can be ignored.

1 is a schematic plan view showing a semiconductor light emitting device according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view taken along line A-A' of Fig. 1. Fig. 3 is an equivalent circuit diagram showing the connection of the light-emitting units in the semiconductor light-emitting device of Fig. 1. Figure 4 is a cross-sectional view showing a modification of the semiconductor light-emitting device of Figure 1.

Referring to FIGS. 1 and 2, a semiconductor light emitting device 100 includes a substrate 101 and a plurality of light emitting cells C arranged on the substrate 101, in accordance with an embodiment of the present invention. The light emitting units C are electrically connected together by the interconnect structure 106. In this example, the term "lighting unit" means a semiconductor multilayer structure having an active layer region, which is different from other units. In this embodiment, 25 illumination units are arranged in a 5x5 pattern; however, the number and arrangement of illumination units C can be varied in various ways. Regarding another component, first and second pads 107a, 107b for external electronic signal applications may be formed on the substrate 101. In this embodiment, the pads 107a and 107b directly contact the light emitting unit C. However, in another embodiment, the pads 107a, 107b and the lighting units may be spaced apart from each other by the interconnect structure 106 and joined together. In this embodiment, the unit is divided into a plurality of light-emitting units C, and the current density per unit area can be further reduced as compared with the example using a single unit. Therefore, the luminous efficiency of the semiconductor light emitting device 100 can be improved.

As shown in FIG. 2, each of the light-emitting units C1, C2, and C3 includes a first conductive semiconductor layer 102, an active layer 103, and a second conductive semiconductor layer 104 formed on a substrate 101. As shown in FIG. 3, the light-emitting units C1, C2, and C3 are connected in series by the interconnect structure 106. In this example, the transparent electrode 105 formed of a transparent conductive oxide may be disposed on the second conductive type semiconductor layer 104. In the series connection structure of the light emitting units C1, C2 and C3, the second conductive type semiconductor layer 104 of the first light emitting unit C1 and the first conductive type semiconductor layer 102 of the second light emitting unit C2 may be connected together. In addition to the series connection, a parallel connection or a series-parallel connection may also be used herein, which will be described later. In this embodiment, the interconnect structure 106 is not a wire, and is formed along the surfaces of the light emitting units C1, C2 and C3 and the substrate 101. The insulating portion 108 may be disposed between the light emitting units C1, C2 and C3 and the interconnect structure 106. Thus, unnecessary electrical short circuits are prevented. In this case, the insulating portion 108 may be formed of a conventional material such as hafnium oxide or tantalum nitride. In this embodiment, since the wires are not used as the structure for electrical connection between the cells, the probability of electrical short circuits can be reduced and the ease of the interconnection process can be improved.

A substrate having electrical insulating properties can be used as the substrate 101, and thus the light emitting unit C can be electrically insulated from another light emitting unit. In the case of using a conductive substrate, it can be used by depositing an insulating layer on a conductive substrate. In this example, the substrate 101 may be a growth substrate for growing a single crystal semiconductor. In view of this, a sapphire substrate can be used. The sapphire substrate is a crystal having a rhombic R3c (Hexa-Rhombo R3c) symmetry. The sapphire substrate has a lattice constant of 13.001 angstroms in the C-axis, a lattice constant of 4.758 angstroms in the a-axis, and a C (0001) plane, an A (1120) plane, and an R (1102) plane. In this case, the C-plane of the sapphire substrate allows the tantalum nitride film to grow relatively easily thereon, and is stable even at high temperatures, so it is mainly used as a substrate for nitride semiconductor growth. In other examples, tantalum carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), magnesium aluminate (MgAl ₂ O ₄ ), magnesium oxide (MgO), lithium metaaluminate (LiAlO) may also be used. ₂ ) or a substrate formed by lithium gallate (LiGaO ₂ ).

The first conductive type semiconductor layer 102 and the second conductive type semiconductor layer 104 may have Al _x In _y Ga _(1-xy) N ( The nitride semiconductor of the composition is formed and may be doped with an n-type impurity or a p-type impurity. In this example, the first conductive semiconductor layer 102 and the second conductive semiconductor layer 104 can be grown by a conventional process, for example, a metal organic chemical vapor deposition (MOCVD) process, a hydride vapor phase epitaxy (HydrideVaporPhaseEpitaxy, HVPE) process or Molecular Beam Epitaxy (MBE) process. The active layer 103 formed between the first conductive type semiconductor layer 102 and the second conductive type semiconductor layer 104 emits light having a predetermined energy level by electron-hole recombination. The active layer 103 may have an In _x Ga _1-x N (0) x 1) A laminated structure of components, which is a structure in which the band gap is adjusted according to the content of indium. In this example, the active layer 103 may have a quantum well isolation layer and a quantum well layer (MQW) structure in which the quantum well layers are alternately stacked, for example, a gallium indium nitride/gallium nitride (InGaN/GaN) structure. Although not necessarily required, a transparent layer formed of a transparent conductive oxide may be formed on the second conductive type semiconductor layer 104. A transparent electrode can be provided to perform ohmic contact and current distribution functions. Meanwhile, as will be described later, each of the light-emitting units C including the first conductive type semiconductor layer 102, the second conductive type semiconductor layer 104, and the active layer 103 can be obtained by separate growth or can be obtained by growing a light-emitting laminated body, and The separation light-emitting unit C is an individual unit.

In this embodiment, the active layer 103 emits blue light, for example, light having a peak wavelength of about 430 to 480 nm. The plurality of light-emitting units C are viewed, and the red and green light-converting elements 109R, 109G are formed in at least a portion of the light-emitting regions. Regarding FIG. 1, the light-emitting area can be regarded as a set of rectangular light-emitting surfaces defined by the light-emitting unit C. The light converting element formed in the light emitting region corresponds to the application of the light wave material on the path through which the convertible light passes through the light emitting region. For example, the red light conversion element 109R is formed on a light emitting surface of a part of the light emitting unit C (for example, C1 of FIG. 2), and the green light converting element 109G may be formed on at least a part of other light emitting elements C (for example, C2 of FIG. 2) ) on the glowing surface. According to this, the blue light emitted from the light emitting unit C and the light emitted from the red light converting element and the green light converting elements 109R, 109G can be mixed to obtain white light. However, the red and blue light converting elements 109R, 109G are not essential components. In some embodiments, only one of the red and green light converting elements 109R, 109G can be provided on the light emitting surface of the light emitting unit C.

The red and green light converting elements 109R, 109G may comprise phosphors and/or quantum dots. In this example, the red and green light conversion elements 109R, 109G may be dispersed in a silicon resin and coated on the surface of the light emitting structure; however, the present invention is not limited thereto. In this embodiment, since the light converting elements 109R, 109G are applied to a plurality of light emitting units C, the coating process can be applied to a relatively large area. Therefore, an example in which a plurality of cells C are formed in a single device and the light conversion elements 109R, 109G are formed in the light-emitting region is advantageous in terms of process simplification as compared with the example in which the phosphor material is coated on each unit wafer. In this embodiment, the area of the light converting elements 109R, 109G is wider than the area occupied by the light emitting unit C. However, depending on process conditions and needs, the light-emitting elements 109R, 109G may be formed to cover the surface of a portion of the light-emitting unit C, for example, covering only the top surface of the light-emitting unit C.

Further, in this embodiment, one of the red and green light conversion elements 109R, 109G is applied to each of the light emitting units C. However, one of the red and green light conversion elements 109R, 109G may be formed over two or more light emitting units C. Such structures can also be applied in the following examples. Furthermore, although shown in FIG. 2, the light converting elements 109R, 109G are formed along the surface of the light emitting unit C, and thus the light converting element has a shape similar to that of the light emitting unit C, however, the light converting elements 109R, 109G may not follow The surface of the light-emitting unit C is formed, and a dome shape as in the modification of Fig. 4 can be formed. Further, as in the modification of Fig. 4, the single light conversion element 109R' can be integrally formed to be applied to two or more light-emitting units C1, C2.

An example of a red phosphor that can be used in the red light conversion element 109R includes MAlSiNx:Re(1) x 5) A nitride phosphor of the composition or a sulfide phosphor having an MD:Re component. The M system is at least one selected from the group consisting of strontium, barium, calcium and magnesium; the D system is at least one selected from the group consisting of sulfur, selenium and tellurium; and the Re system is selected from the group consisting of ruthenium, osmium, iridium, osmium and iridium (Nd). , at least one of mega (Pm), strontium (Sm), strontium (Gd), strontium (Tb), strontium (Dy), strontium (Ho), strontium, strontium, barium, strontium, fluorine, chlorine, bromine and iodine . Further, examples of the green phosphor which can be used in the green light converting element 109G include a tellurite phosphor having a M ₂ SiO ₄ :Re component, a sulfide phosphor having a MA ₂ D ₄ :Re component, having β- SiAlON: a phosphor of the Re component and an oxide phosphor having a MA' ₂ O ₄ :Re' component. The M system is at least one selected from the group consisting of lanthanum, cerium, calcium and magnesium; the A system is at least one selected from the group consisting of gallium, aluminum and indium; and the D system is at least one selected from the group consisting of sulfur, selenium and tellurium; It is at least one selected from the group consisting of ruthenium, osmium, iridium, osmium, iridium, aluminum, and indium; and the Re is at least one selected from the group consisting of ruthenium, osmium, iridium, osmium, iridium, yttrium, yttrium At least one of ruthenium, osmium, iridium, osmium, fluorine, chlorine, bromine and iodine; and Re' is selected from the group consisting of ruthenium, osmium, mega, iridium, osmium, iridium, osmium, iridium, osmium, iridium, fluorinated, chloro At least one of bromine and iodine.

Further, the quantum dots are nanoparticles having a core and a shell. The core of the quantum dot has a size range of 2 nm (nanometer) to 100 nm. By adjusting the size of the center, quantum dots can be used as phosphor materials that emit various colors, such as blue (B), yellow (Y), green (G), and red. . The core-shell structure constituting the quantum dot can be formed by a heterojunction of at least two semiconductors selected from the group consisting of a Group II-VI compound semiconductor (zinc sulfide, zinc selenide, zinc telluride, cadmium sulfide, cadmium selenide) , cadmium telluride, mercury sulfide, mercury selenide, mercury telluride, magnesium telluride, etc.), III-V compound semiconductors (gallium nitride, gallium phosphide, gallium arsenide, gallium antimonide, indium nitride, Indium phosphide, indium arsenide, indium antimonide, aluminum arsenide, aluminum phosphide, aluminum telluride, aluminum sulfide, etc.) or Group IV semiconductors (锗, 矽, lead, etc.). In this case, an organic ligand such as an oleic acid material may be formed on the outer shell of the quantum dot to terminate molecular bonding of the shell surface, inhibit aggregation of quantum dots, and improve resin such as epoxy resin or epoxy resin. Dispersion within, or improve the function of the phosphor.

Meanwhile, since there are blue light which is not converted by the red and green light conversion elements 109R, 109G and passed through the red and green light conversion elements 109R, 109G, the red or green light conversion element 109R or 109G can be formed in the entire light emitting unit C On the glowing surface. However, in order to improve the rendering index or obtain white light having a low color temperature, the light conversion element may not be formed on the light emitting surface of a part of the light emitting unit (for example, C2 of FIG. 2). The number or arrangement of the red and green light conversion elements 109R, 109G can be appropriately determined using a classification technique according to the color temperature required in the apparatus and the color rendering index. Thereby, in this embodiment, a single device can emit red light, green light, and blue light, and the number and arrangement of the devices can be adjusted as needed. Accordingly, a semiconductor light emitting device according to an embodiment of the present invention is applicable to a lighting device such as an emotional illumination device.

5 is a cross-sectional view showing the interconnection structure of the light-emitting unit which can be used in another modification of the semiconductor light-emitting device of FIG. 1, and FIG. 6 is a view showing the AC which can be obtained by the interconnection structure of FIG. The equivalent circuit diagram of the drive unit. In the embodiment of Fig. 1, the light emitting units are electrically connected in series. Specifically, the connection of the light emitting units corresponds to an n-p connection. However, as shown in FIG. 5, the second conductive semiconductor layer 104 of the first light emitting unit C1 is electrically connected to the second conductive semiconductor layer 104 of the second light emitting unit C2, and the first conductive layer of the second light emitting unit C2 is electrically conductive. The semiconductor layer 102 can be electrically connected to the first conductive semiconductor layer 102 of the third light emitting unit C3. Such connections correspond to connections of semiconductor layers of the same polarity (p-p connection or n-n connection). Such an interconnect structure can be implemented as an AC drive as shown in FIG. The circuit of Fig. 6 is a so-called ladder network circuit in which eleven light-emitting units are capable of emitting light with respect to electronic signals supplied in the forward and reverse directions.

Figure 7 is a plan view showing a semiconductor light emitting device according to another embodiment of the present invention. Figure 8 is an equivalent circuit diagram showing the connection of the light-emitting units in the semiconductor light-emitting device of Figure 7. Figure 9 is a plan view showing a modification of the semiconductor light-emitting device of Figure 7.

Referring to FIG. 7, a semiconductor light emitting device 200 according to an embodiment of the present invention includes 16 light emitting units C on a substrate 201. The 16 light-emitting units C are arranged in a 4x4 array. In this example, the number and arrangement of the light-emitting units C can be modified. In the embodiment described above, the red light converting element 209R is formed in a portion of the light emitting region formed by the plurality of light emitting cells C, and the green light converting element 209G may be formed in a portion of other regions. Accordingly, the light emitted from the red and green light conversion elements 209R, 209G and the blue light emitted from the light emitting unit C in which the red and green light conversion elements 209R, 209G are not formed may be mixed to emit white light.

The first and second pads 207a, 207b are formed in other regions of the substrate 201, and are electrically connected to the first conductive semiconductor layer 202 and the second conductive semiconductor layer of the light emitting unit C. In Fig. 7, the second conductive type semiconductor layer is not shown, but the transparent electrode 205 formed on the second conductive type semiconductor layer is illustrated. In this embodiment, the light emitting unit C is disposed to distribute the first conductive type semiconductor layer 202. That is, regarding the isolation based on the light-emitting unit C, the first conductive type semiconductor layer 202 is not separated and the first conductive type semiconductor layer 202 may be integrally formed over the entire light-emitting unit C. The first interconnect structure 206a connecting the first pad member 207a extends from the first pad member 207b such that the first interconnect structure 206a connects the first conductive type semiconductor layer 202. Likewise, the second interconnect structure 206b connecting the second pad member 207b extends from the second pad member 207b such that the second interconnect structure 206b connects the second conductive type semiconductor layer. The connection portion m may be formed to connect the second conductive type semiconductor layers of the adjacent light emitting units C. In this example, although not shown in FIG. 7, since the second interconnect structure 206b and the connection portion m need to be electrically separated from the first conductive type semiconductor layer 202 or the active layer, an insulating material or an air bridge may be disposed therebetween. structure.

As shown in Fig. 8, due to such an electrical connection structure, 16 light-emitting units C are connected in parallel. Such parallel connection structures are typically used as high power sources under DC voltage operation. The semiconductor light-emitting device 200' of Fig. 9 is similar to the embodiment of Fig. 1 in that the first conductive type semiconductor layer 202 is provided to the individual light-emitting units C, but the electrical connection structure corresponds to the parallel connection structure of Fig. 7. The first interconnect structure 206a extending from the first pad member 207a is not directly connected to the light emitting unit C, but the first conductive type semiconductor layer 202 of the light emitting unit C is connected via the connecting portion m.

10 is a schematic plan view showing a semiconductor light emitting device according to another embodiment of the present invention, and FIG. 11 is an equivalent circuit diagram showing a connection of a light emitting unit in the semiconductor light emitting device of FIG.

Referring to FIG. 10, a semiconductor light emitting device 300 according to an embodiment of the present invention includes 16 light emitting units C on a substrate 301. The 16 light-emitting units C are arranged in a 4x4 array. In this example, the number and arrangement of the light-emitting units C can be modified. In the embodiment described above, the red light converting element 309R is formed in a portion of the light emitting region formed by the plurality of light emitting cells C, and the green light converting element 309G may be formed in a portion of the other regions. Accordingly, the light emitted from the red and green light conversion elements 309R, 309G and the blue light emitted from the light emitting unit C in which the red and green light conversion elements 309R, 309G are not formed may be mixed to emit white light. In this embodiment, the first and second pads 307a, 307b are formed in other regions of the substrate 301, and are electrically connected to the first conductive semiconductor layer 302 and the second conductive semiconductor layer of the light emitting unit C. In Fig. 10, the second conductive type semiconductor layer is not shown, and the transparent electrode 305 formed on the second conductive type semiconductor layer is illustrated. That is, the first interconnect structure 306a connecting the first pad member 307a is connected to the second conductive type semiconductor layer provided to a part of the light emitting unit C. Similarly, the second interconnect structure 306b connecting the second pad member 307b is connected to the first conductive type semiconductor layer of a portion of the other light emitting cells C. The other light-emitting units C are not directly connected to the first and second interconnect structures 306a, 306b and are connected in series by the connection structure m. Accordingly, as shown in Fig. 11, a structure in which a series connection and a parallel connection are mixed can be obtained.

12, 13 and 30 are schematic plan views showing a semiconductor light emitting device according to another embodiment of the present invention. Figure 31 is a schematic cross-sectional view taken along line A-A' of Figure 30.

In the embodiment of Fig. 12, the semiconductor light emitting device 400 includes 24 light emitting units C on the substrate 401. The 24 light-emitting units C are arranged in a 4x6 array. The plurality of light emitting units C are divided into three groups: a red group RG, a green group GG, and a blue group BG. The red light conversion material covering the light emitting unit C is formed in the light emitting region corresponding to the red group RG. The green light conversion material covering the light emitting unit C is formed in the light emitting area corresponding to the green group GG. The light conversion material is not formed in the light emitting region of the corresponding blue group BG. The red group RG, the green group GG, and the blue group BG each include eight light emitting units C, and the light emitting units C form a series connection structure. However, the number or electrically connected connection of the light-emitting units C can be appropriately modified. For example, a single group of RGs, GGs, or cells within the BG can form a parallel structure or a series-parallel structure. As shown in FIG. 12, in order to uniformly mix light of different colors, the red group RG, the green group GG, and the blue group BG may be individually arranged in a plurality of regions, such that the red group RG, the green group The GG and the blue group BG may be mixed with other groups instead of being arranged to have the same category group in a single area. In this example, the connection structures m of the light-emitting units C belonging to different groups may be arranged to overlap each other. For this purpose, an insulating material or an air bridge structure can be provided between the connection structures m of the corresponding regions.

In this embodiment, the semiconductor light emitting device 400 includes three pairs of pads. Specifically, the first and second pads 407a, 407b connecting the red group RG, the first and second pads 407a', 407b' connecting the blue group BG, and the first and the green group GG are connected The second pads 407a", 407b" are arranged on the substrate 401. The current applied to the red group RG, the green group GG, and the blue group BG by the three pairs of pads can be separately controlled. Accordingly, the amount of illumination from each group can be controlled by adjusting the intensity applied to the red group RG, the green group GG, and the blue group BG current. Therefore, the color temperature of the white light and the color rendering index can be changed to the desired degree. For example, hot white light can be obtained by relatively increasing the intensity of the red group RG illumination. In a similar manner, cool white light can be obtained by relatively increasing the intensity of the blue group BG illumination. In addition, color light other than white light can be implemented by a packet current control method. A semiconductor light emitting device according to an embodiment of the present invention can be used in an infective lighting device.

In the embodiment of Fig. 13, the semiconductor light emitting device 400' includes 24 light emitting cells C on the substrate 401. The 24 light-emitting units C are arranged in a 4x6 array in a manner similar to the embodiment of Fig. 12. However, the plurality of light-emitting units C are divided into three groups of RGG1, RGG2, and RGG3, and the mixture of the red light and the green light-converting material covering the light-emitting unit C is formed in the respective groups corresponding to RGG1, RGG2, and RGG3. In the area. That is, in this embodiment, the light conversion element applied to a single group includes two or more light conversion materials, for example, red light and green light conversion materials. In this example, the mixing ratio of at least one of the red light and the green light conversion material in at least one of the groups RGG1, RGG2, and RGG3 is different from the other. According to this, different colors can be mixed. In this case, the single light converting element may comprise another material as well as a red and green color light converting material. For example, the light converting element may include red, green, and blue light converting materials. According to this, the quality of white light can be further improved.

As in the embodiment of FIG. 12, the groups RGG1, RGG2, and RGG3 each include eight light emitting units C, and the light emitting units C form a series connection structure. However, the number or electrical connection of the light-emitting units C can be appropriately modified. As shown in FIG. 13, in order to uniformly mix different colors, a plurality of groups RGG1, RGG2, and RGG3 may be respectively arranged in a plurality of regions, so that a plurality of groups RGG1, RGG2, and RGG3 may be mixed with each other instead of the same Groups of categories are arranged in a single area. In this example, the connection structures m of the light-emitting units C belonging to different groups may be arranged to overlap each other. For this purpose, an insulating material or an air bridge structure can be provided between the connection structures m of the corresponding regions. Further, three pairs of pads are provided on the substrate 401. Specifically, the first and second pads 407a, 407b of the first group RRG1, the first and second pads 407a', 407b' connected to the second group RGG2, and the third group RGG3 are connected. The first and second pads 407a", 407b" are arranged on the substrate 401. The current applied to the plurality of groups RGG1, RGG2, and RGG3 by the three pairs of pads can be separately controlled. Accordingly, the color temperature of the white light and the color rendering index can be changed to a desired level. As in the present embodiment, the color temperature and the color rendering index can be more accurately controlled by mixing two or more kinds of light conversion materials and applying the mixing ratio of the light conversion materials to the respective groups RGG1. RGG2 and RGG3 control the current applied to each of the groups RGG1, RGG2, and RGG3, respectively.

Meanwhile, although the color temperature of white light has been controlled to be controlled in a single multi-wafer in the embodiments of Figs. 12 and 13, the color temperature of white light can also be controlled at the package level. In the embodiment of the 30th and 31st, the semiconductor light emitting device 400" includes a plurality of multi-wafer devices 400G1, 400G2 arranged on the package substrate 410. As shown in Fig. 31, each of the multi-chip devices 400G1, 400G2 has A structure in which a plurality of light-emitting units are connected together. In this example, each of the multi-wafer devices 400G1, 400G2 can form the same light-emitting unit connection structure as described in the previous embodiment. That is, the multi-wafer device 400G1, 400G2 has a plurality of light-emitting devices. The unit is arranged on the substrate 401, and each of the light emitting units includes a first conductive type semiconductor layer 402, an active layer 403, a second conductive type semiconductor layer 404, and a transparent electrode 405. Further, the interconnect structure 406 is not a wire and a tie The substrate 401 and the surface of the light emitting unit are formed, and the insulating portion 408 can be disposed between the light emitting unit and the interconnect structure 406, thereby preventing unnecessary electrical short circuits.

In this embodiment, the multi-wafer device 400G1, 400G2 includes red and green light conversion materials having different mixing ratios, as in the embodiments of Figures 12 and 13. In this embodiment, the multi-wafer is divided into two groups 400G1, 400G2. Therefore, the total color temperature and color rendering index of the semiconductor light emitting device can be accurately controlled by separately adjusting the currents applied to the groups 400G1 and 400G2. Meanwhile, in this embodiment, the light conversion element includes the barrier element 411. The interior of the barrier element 411 is filled with a light converting material 412. The barrier element 411 can be formed by a barrier and a filling process. The barrier and filling process is a process in which the barrier element 411 is formed to surround the light emitting unit in the package substrate 410 or the light emitting unit substrate 401, and the barrier element 411 is filled with the light conversion material 412. In this embodiment, the barrier element 411 can comprise the same material as the light converting material 412. Furthermore, the barrier element 411 itself may be formed of the same material as part of its filling. That is, the barrier element 411 may further include a phosphor and a resin and a filler (aluminum oxide, cerium oxide, titanium oxide, etc.). Accordingly, its thixotropy can be improved to contribute to the formation of a barrier. Further, light can be emitted to the outside via the barrier element 411. Furthermore, since wavelength conversion can be accomplished, it is expected that the light loss caused by the barrier element 411 can be minimized, and light efficiency and light orientation can be improved.

Figure 14 is a plan view showing a semiconductor light emitting device according to another embodiment of the present invention. Fig. 15 is a schematic cross-sectional view taken along line B-B' of Fig. 14. Fig. 16 is a schematic cross-sectional view taken along line D-D' of Fig. 15.

Referring to FIGS. 14 to 16, the semiconductor light emitting device 500 includes a plurality of light emitting cells C arranged on a substrate 501. Each of the light emitting units C includes a first conductive type semiconductor layer 502, an active layer 503, and a second conductive type semiconductor layer 504. Further, the transparent electrode 505 may be further disposed on the second conductive type semiconductor layer 504. In this embodiment, the base layer 502' connecting the first conductive type semiconductor layer 502 provided by the light emitting unit C is disposed between the light emitting unit and the substrate 501. The base layer 502' can be integrally formed over the entire light emitting unit. The base layer 502' may be formed of a first conductive type semiconductor material or an undoped semiconductor material. As will be described later, the base layer 502' may be provided as a seed layer for regenerating the long first conductivity type semiconductor layer 502. In the example in which the base layer 502' is formed of the first conductive type semiconductor material, the first conductive type semiconductor layer is distributed by the light emitting unit C. Accordingly, the light-emitting units C are electrically connected in parallel. In this example, the active layer 503 can be grown without regrown the first conductive type semiconductor layer 502. Again, in some examples, the base layer 502' need not be formed. In this example, the light emitting unit C can be directly formed on the substrate 501.

The first pad member 507a is formed on the base layer 502', and the first interconnect structure 506a extends from the first pad member 507a and connects the first conductive type semiconductor layer 502. Further, the second pad member 507b is formed on the first conductive type semiconductor layer 502, and the second interconnect structure 506b extends from the second pad member 507b and connects the second conductive type semiconductor layer 504. However, since the second pad member 507b and the second interconnect structure 506b need to be electrically separated from the first conductive type semiconductor layer 502 and the active layer 503, the insulating portion 508 may be disposed therebetween. Meanwhile, although the first pad member 507a and the second pad member 507b are formed on the first conductive type semiconductor layer 502, the formation thereof can be similar to the previous embodiment. That is, the first pad member 507a and the second pad member 507b may be formed in a predetermined region of the substrate 501 in which the first conductive type semiconductor layer 502 is not formed.

In this embodiment, the semiconductor light emitting device 500 includes three or more light emitting units C. The first light emitting unit C1 emits red light, the second light emitting unit C2 emits green light, and the third light emitting unit C3 emits blue light. That is, a single device can emit red, green, and blue light. Since the number and arrangement of the light-emitting units C can be adjusted as needed, it can be applied to a lighting device such as an emotional lighting device. For this purpose, the components of the active layers 503R, 503G, and 503B of the first, second, and third light-emitting units C1, C2, and C3 are adjusted such that the active layers 503R, 503G, and 503B have different energy band gaps to thereby emit different colors. Light. As will be described later, when the light-emitting units C1, C2, and C3 are formed by different regrowth processes, the active layers 503R, 503G provided by the first, second, and third light-emitting units C1, C2, and C3 can be easily adjusted. Growth conditions of 503B. Further, since the light-emitting unit C that emits red light, green light, and blue light is provided, the light conversion element may not necessarily be separately formed on the light-emitting surface of the light-emitting unit C. Therefore, light loss caused by phosphors or quantum dots can be reduced.

17 to 20 are cross-sectional views illustrating a method of fabricating the semiconductor light emitting device of Fig. 14 according to an embodiment of the present invention. As shown in Fig. 17, the base layer 502' is grown on the substrate 501. As described above, the base layer 502' may be formed of a first conductive type semiconductor material or an undoped semiconductor material. For example, the base layer 502' may be formed of a nitride semiconductor. In this example, the base layer 502' can be formed using conventional semiconductor thin film growth processes such as metal organic chemical vapor deposition (MOCVD) processes, hydride vapor phase epitaxy (HVPE) processes, or molecular beam epitaxy (MBE) processes.

As shown in Fig. 18, a cover layer 510 having an opening region exposing a portion of the base layer 502' is formed on the substrate 501. The open area is provided as a region where the light emitting unit is formed through the regrowth process. The shell layer 510 may be formed of a material such as hafnium oxide or tantalum nitride by a deposition process or a sputtering process. Additionally, the open area of the shell layer 510 can be formed using conventional photoresist processes. As shown in FIG. 19, the light-emitting unit is formed on the base layer 502 by continuously growing the first conductive semiconductor layer 502, the active layer 503R, and the second conductive semiconductor layer 504 via the opening region. Although the order of growth is not particularly limited, the active layer 503R that emits red light can be grown through this growth process.

As shown in Fig. 20, another open area is formed in the cover layer 510. A light-emitting unit including a first conductive type semiconductor layer 502, an active layer 503G that emits green light, and a second conductive type semiconductor layer 504 is formed on the base layer 502'. A light-emitting unit including a first conductive type semiconductor layer 502, a blue light-emitting active layer 503B, and a second conductive type semiconductor layer 504 is formed on the base layer 502'. In this step, the light emitting units may not need to be separately arranged without being in contact with each other. Although not shown, a transparent electrode may be formed on the second conductive type semiconductor layer 504. The interconnect structure is formed to electrically connect the light emitting unit, and thus the structure of Fig. 14 can be obtained. In the above method of manufacturing a semiconductor light-emitting device, an etching process is not used to separate the light-emitting unit C. Instead, the regrowth of the semiconductor layer is used to spontaneously separate the light-emitting units. Further, the first conductive type semiconductor layer 502 does not have to be etched to connect the interconnect structure to the first conductive type layer 502. According to this, it is possible to prevent damage of the light-emitting unit C during the etching process. Since the area of the active layer 503 is ensured to be sufficient, the luminous efficiency of the semiconductor light-emitting device can be improved.

32 through 34 are cross-sectional views showing a method of fabricating a semiconductor memory device in accordance with another embodiment of the present invention. As shown in FIG. 32, the first conductive semiconductor layer 502 is grown on the substrate 501, and the first to third active layers 503R, 503B, and 503G are formed in the first region of the first conductive semiconductor layer 502. To the third area. As in the foregoing embodiment, the first to third active layers 503R, 503B, and 503G each emit red light, blue light, and green light. In this example, the first to third active layers 503R, 503B, and 503G may be grown using a cap layer 510 having an appropriately shaped open region. As shown in FIG. 33, the second conductive type semiconductor layer 504 is grown to cover the first to third active layers 503R, 503B, and 503G. The second conductive semiconductor layer 504 may be integrally formed while covering the top and side surfaces of the first to third active layers 503R, 503B, and 503G.

As shown in Fig. 34, a light-emitting structure (light-emitting unit) separation process is performed. That is, the first to third light emitting structures are formed by removing a portion of the second conductive type semiconductor layer 504 such that the positions of the first to third active layers 503R, 503B, and 503G are second. The conductive semiconductor layer 504 is left behind. In this example, as shown in Fig. 34, it is not necessary to remove the first conductive type semiconductor layer 502. Accordingly, the light emitting structures can be connected in parallel. Alternatively, in order to apply to another connection structure, a portion of the first conductive type semiconductor layer 502 may be removed such that the first conductive type semiconductor corresponding to the positions of the first active layer to the third active layers 503R, 503B, and 503G Layer 502 is left. Although not shown, a multi-wafer device can be completed by forming a suitably electrically interconnected structure between the light-emitting structures.

Figure 21 is a plan view showing a semiconductor light-emitting device according to another embodiment of the present invention, and Figure 22 is a schematic cross-sectional view taken along line E1-E1' of Figure 21.

Referring to FIGS. 21 and 22, the semiconductor light emitting device 600 includes a plurality of light emitting cells C arranged on the conductive substrate 606. Each of the light emitting units C includes a first conductive type semiconductor layer 601, an active layer 602, and a second conductive type semiconductor layer 603. The reflective metal layer 604 can be disposed between the light emitting unit C and the conductive substrate 606, specifically, between the second conductive type semiconductor layer 603 and the conductive substrate 606. The reflective metal layer 604 is not an essential component but a selective component. An interconnect structure 607 for electrically connecting a plurality of light emitting cells C is formed on the first conductive semiconductor layer 601. A pad 608 that connects the interconnect structure 607 can be further provided. An external electronic signal is applied through the pad 608. In this example, as shown in FIG. 22, the interconnection structure 607 is formed along the surface of the light-emitting units C1 and C2 to connect the first conductive type semiconductor layer 601 provided by the two light-emitting units C1 and C2. The active layer 602, the second conductive semiconductor layer 603, the reflective metal layer 604, and the conductive substrate 606 may be electrically separated from each other by the insulating portion 609. In this embodiment, since the electrical connection structure of the second conductive type semiconductor layer 603 can be completed by the conductive substrate 606, it is not necessary to form an additional interconnect structure. Further, since the first conductive type semiconductor layer 601 or the second conductive type semiconductor layer 603 does not require mesa etching, a sufficient light emitting area can be secured.

The conductive substrate 606 provides a support body as a supporting light emitting structure in a subsequent process such as a laser stripping process. The conductive substrate 606 may be formed of one or more materials selected from the group consisting of gold, nickel, aluminum, copper, tungsten, tantalum, selenium, and gallium arsenide. For example, the conductive substrate 606 may be formed of a material doped with aluminum into the crucible. In this example, the conductive substrate 606 can be formed by an electroplating process or a bonding process depending on the selected material. The conductive substrate 606 is electrically connected to the second conductive type semiconductor layer 603 of each of the light emitting units C. Accordingly, in this embodiment, the light-emitting units C are electrically connected in parallel. The reflective metal layer 604 can reflect light emitted from the active layer 602 in the upward direction of the device, that is, in the direction of the first conductive type semiconductor layer 601. Furthermore, the reflective metal layer 604 can form an ohmic contact with the second conductive type semiconductor layer 603 in consideration of electrical properties. In view of such functionality, the reflective metal layer 604 can comprise silver, nickel, aluminum, ruthenium, palladium, rhodium, iridium, magnesium, zinc, platinum, or gold. In this example, although not shown in detail, the reflection efficiency can be improved by utilizing the reflective metal layer 604 in the multilayer structure. Examples of reflective metal layers having a multilayer structure include nickel/silver, zinc/silver, nickel/aluminum, palladium/silver, palladium/aluminum, iridium/silver, iridium/gold, platinum/silver, platinum/aluminum, and nickel/silver/platinum. . Although the reflective metal layer 604 is provided in each of the light emitting units C, the reflective metal layer 604 may be integrally formed over the entire light emitting unit C.

23 and 24 are schematic cross-sectional views showing the modification of the semiconductor light emitting device of Fig. 21. Referring to Fig. 23, the semiconductor light emitting device 600' further includes the isolation layer 605 in the embodiment of Fig. 21. The isolation layer 605 can be integrally formed over the entire light emitting cells C1 and C2. The isolation layer 605 can be formed between the conductive substrate 606 and the light-emitting units C1, C2 to prevent the influence of material or unpredictable diffusion during the process of bonding the conductive substrate 606 to the light-emitting structure. The isolation layer 605 may be formed of titanium tungsten (TiW). Referring to Fig. 24, the interconnect structure 607' of the semiconductor light emitting device 600" can be divided into a metal region 607a and a transparent region 607b. The upper region of the at least one first conductive semiconductor layer 601 can be formed into a transparent region 607a to reduce Light loss. In this example, the transparent region 607b of the interconnect structure 607' may be formed of a transparent conductive oxide.

25 to 28 are cross-sectional views showing a method of manufacturing the semiconductor light emitting device of Fig. 21 according to an embodiment of the present invention. As shown in Fig. 25, the light-emitting laminate system is formed by continuously growing the first conductive type semiconductor layer 601, the active layer 602, and the second conductive type semiconductor layer 603 by using, for example, one or more of the following semiconductor layer growth processes: metal Organic Chemical Vapor Deposition (MOCVD) process, Hydride Vapor Phase Epitix (HVPE) process or Molecular Beam Epitaxy (MBE) process. As shown in Fig. 26, an insulating portion 609 having an opening region is formed on the second conductive type semiconductor layer 603, and a reflective metal layer 604 is formed to fill the opening region. In this example, the insulating portion 609 and the reflective metal layer 604 can be formed using a conventional deposition process or a sputtering process.

As shown in FIG. 27, a conductive substrate 606 is formed over the reflective metal layer 604. For example, an adhesive adhesion layer (not shown) formed of a eutectic metal may be applied between the reflective metal layer 604 and the conductive substrate 606, and the conductive substrate 606 may be attached thereto. The growth substrate 610 is also separated from the luminescent layered body. The growth substrate 610 can be separated using a laser lift-off process or a chemical lift-off process. Fig. 27 is a view showing a state in which the growth substrate 610 is removed while being rotated by 180 degrees compared to Fig. 26.

As shown in Fig. 28, an internal cell separation process is performed to remove the region between the light-emitting cells C1 and C2, thus forming a plurality of light-emitting cells C1, C2. In this example, the internal cell separation process can be completed using a known etching process such as an ion etching (ICP-RIE) process. During this process, the insulating portion 609 can serve as an etch barrier. Although not shown, the insulating portion 609 is further formed on the surface of the light emitting cells C1, C2, and the interconnect structure 607 is formed to connect the first conductive type semiconductor layer 601. In this way, the semiconductor light emitting device 600 shown in Fig. 21 can be obtained.

Meanwhile, Fig. 29 is a schematic configuration diagram showing an exemplary application of a semiconductor light emitting device according to an embodiment of the present invention. Referring to FIG. 29, the lighting device 700 includes a light emitting module 701, a support structure 704, and a light emitting module 701 and a power supply 703 are disposed thereon. The light emitting module 701 includes one or more semiconductor light emitting devices 702 fabricated by the method provided by embodiments of the present invention. Furthermore, the illumination device 700 includes a feedback circuit for comparing the amount of light emitted by the semiconductor light-emitting device 702 with the amount of current illumination, and a memory device for storing desired brightness or color rendering. Information. The lighting device 700 can be used as indoor lighting, such as a light bulb or license plate light, or outdoor lighting, such as a street light or sign. Additionally, lighting device 700 can be used with a variety of vehicles, such as vehicles such as boats or airplanes. In addition, lighting device 700 will be more widely used in home appliances, such as televisions or refrigerators, and medical applications.

When a semiconductor light-emitting device according to a specific embodiment of the present invention is used, the current density per unit area is increased to improve its light extraction efficiency. Furthermore, white light with high color development can be obtained.

Further, according to the semiconductor light-emitting device of the embodiment of the present invention, high-efficiency white light can be obtained without using a phosphor. Further, when the semiconductor light-emitting device provides a plurality of light-emitting units, a sufficient light-emitting area can be secured.

The present invention has been described and described in detail with reference to the specific embodiments of the invention, and the modifications and changes in the scope of the invention may be made without departing from the spirit and scope of the invention.

100, 100", 200, 200', 300, 400, 400', 400", 500, 600, 600', 600", 702... semiconductor light-emitting devices

101, 201, 401, 501. . . Substrate

502’. . . Grassroots

102, 202, 302, 502, 601. . . First conductive semiconductor layer

103, 403, 503, 503R, 503G, 503B, 602. . . Active layer

104, 504, 603. . . Second conductive semiconductor layer

604. . . Reflective metal layer

105, 205, 305, 405, 505. . . Transparent electrode

605. . . Isolation layer

106, 406, 607, 607’. . . Interconnect structure

606. . . Conductive substrate

206a, 306a, 506a. . . First interconnect structure

206b, 306b, 506b. . . Second interconnect structure

608. . . Cushion

107a, 207a, 307a, 407a, 407a', 407a", 507a... first pad

107b, 207b, 307b, 407b, 407b', 407b", 507b... second pad

607a. . . Metal area

607b. . . Transparent area

108, 508, 609. . . Insulation

510. . . Cover layer

610. . . Growth substrate

410. . . Package substrate

109R, 109R', 209R, 309R. . . Red light conversion element

109G, 109G', 209G, 309G. . . Green light conversion element

700. . . lighting device

701. . . Light module

703. . . Power Supplier

704. . . supporting structure

400G1, 400G2. . . Multi-chip device

411. . . Barrier element

412. . . Light conversion material

BG. . . Blue group

C, C1, C2, C3. . . Light unit

GG. . . Green group

m. . . Connection structure

RG. . . Red group

RGG1, RGG2, RGG3. . . Group

The above-described other aspects, features, and other advantages of the present invention will become more apparent from the following description,

1 is a plan view showing a semiconductor light emitting device according to an embodiment of the present invention;

Figure 2 is a schematic cross-sectional view along line A-A' of Figure 1;

Figure 3 is an equivalent circuit diagram showing the connection of the light-emitting units in the semiconductor light-emitting device of Figure 1;

Figure 4 is a schematic cross-sectional view showing the modification of the semiconductor light-emitting device of Figure 1;

5 is a schematic cross-sectional view showing an interconnection structure of a light-emitting unit that can be used in another modification of the semiconductor light-emitting device of FIG. 1;

Figure 6 is an equivalent circuit diagram showing an AC driving device obtainable by the interconnection structure of Figure 5;

7 is a plan view showing a semiconductor light emitting device according to another embodiment of the present invention;

Figure 8 is an equivalent circuit diagram showing the connection of the light-emitting units in the semiconductor light-emitting device of Figure 7;

Figure 9 is a plan view showing a modification of the semiconductor light-emitting device of Figure 7;

FIG. 10 is a plan view showing a semiconductor light emitting device according to another embodiment of the present invention; FIG.

Figure 11 is an equivalent circuit diagram showing the connection of the light-emitting units in the semiconductor light-emitting device of Figure 10;

Figure 12 is a plan view showing a semiconductor light emitting device according to another embodiment of the present invention;

Figure 13 is a plan view showing a light-emitting device according to another embodiment of the present invention;

Figure 14 is a plan view showing a semiconductor light emitting device according to another embodiment of the present invention;

Figure 15 is a schematic cross-sectional view along line B-B' of Figure 14;

Figure 16 is a schematic cross-sectional view taken along line D-D' of Figure 15;

17 to 20 are cross-sectional views illustrating a method of fabricating the semiconductor light emitting device of Fig. 14 according to an embodiment of the present invention;

Figure 21 is a plan view showing a semiconductor light emitting device according to another embodiment of the present invention;

Figure 22 is a schematic cross-sectional view along line E1-E1' of Figure 21;

Figure 23 is a cross-sectional view showing a modification of the semiconductor light-emitting device of Figure 21;

Figure 24 is a cross-sectional view showing a modification of the semiconductor light-emitting device of Figure 21;

25 to 28 are cross-sectional views showing a method of fabricating the semiconductor light emitting device of Fig. 21 according to an embodiment of the present invention;

Figure 29 is a schematic configuration diagram showing an exemplary application of a semiconductor light emitting device according to an embodiment of the present invention;

Figure 30 is a plan view showing a semiconductor light emitting device according to another embodiment of the present invention;

Figure 31 is a cross-sectional view of the semiconductor light-emitting device of Figure 30 taken along line A-A';

32 through 34 are cross-sectional views showing a method of fabricating a semiconductor memory device in accordance with another embodiment of the present invention.

100. . . Semiconductor light emitting device

101. . . Substrate

102. . . First conductive semiconductor layer

105. . . Transparent electrode

106. . . Interconnect structure

107a. . . First pad

107b. . . Second pad

109R. . . Red light conversion element

109G. . . Green light conversion element

C. . . Light unit

Claims (25)

A semiconductor light-emitting device comprising: a substrate; a plurality of light-emitting units arranged on the substrate, the light-emitting units each comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and a first conductive semiconductor layer The active layer between the second conductive semiconductor layer and the second conductive semiconductor layer And at least one of the first conductive semiconductor layer and the second conductive semiconductor layer of the other light emitting unit; and the light converting element is formed in at least a portion of the light emitting region defined by the plurality of light emitting units The light conversion element includes at least one of a red light conversion element having a red light conversion material and a green light conversion element having a green light conversion material, wherein the interconnection structure includes a first interconnection structure and a second interconnection And at least one of the first interconnect structure and the second interconnect structure having a length greater than a width of each of the light emitting units, wherein the interconnect Configuration having a length greater than a width of each of the light emitting unit, the interconnect is disposed in the region of the substrate except the light emitting unit. The semiconductor light-emitting device of claim 1, wherein the light-converting element is not formed in a portion of the light-emitting region. The semiconductor light-emitting device of claim 1, wherein The light conversion element includes at least one of a phosphor and a quantum dot. The semiconductor light-emitting device of claim 1, wherein the first conductive semiconductor layer of at least one of the plurality of light-emitting units is electrically connected to the second conductive semiconductor layer of the other light-emitting unit. The semiconductor light-emitting device of claim 1, wherein the first conductive semiconductor layer of at least one of the plurality of light-emitting units is electrically connected to the first conductive semiconductor layer of the other light-emitting unit. The semiconductor light-emitting device of claim 1, wherein the second conductive semiconductor layer of at least one of the plurality of light-emitting units is electrically connected to the second conductive semiconductor layer of the other light-emitting unit. The semiconductor light-emitting device of claim 1, wherein the first conductive semiconductor layer of the plurality of light-emitting units is integrally formed. The semiconductor light-emitting device of claim 1, wherein the red light-converting element and one of the green light-converting elements are formed in each of the light-emitting units. The semiconductor light-emitting device of claim 1, wherein the red light-converting element and the green light-converting element are integrally formed with respect to two or more of the plurality of light-emitting units. The semiconductor light-emitting device of claim 1, wherein the light-converting element is formed along a surface of the light-emitting units. The semiconductor light-emitting device of claim 1, wherein the light conversion element comprises the red light conversion element and the green light conversion element; the plurality of light-emitting units are divided into a red group, a green group, and a blue group including one or more cells in which the red light conversion element is formed, the green group including one or more cells in which the green light conversion element is formed, and the blue group includes The red light conversion element and the green light conversion element are not formed in one or more of the units; and the semiconductor light emitting device includes three pairs of pads each connected to the red group, the green group, and the blue group Pieces. The semiconductor light-emitting device of claim 11, wherein the current applied to the red group, the green group, and the blue group by the pad is separately controlled. A semiconductor light-emitting device comprising: a substrate; a plurality of light-emitting units arranged on the substrate, the light-emitting units each comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and a first conductive semiconductor layer The active layer between the second conductive semiconductor layer and the second conductive semiconductor layer And at least one of the first conductive semiconductor layer and the second conductive semiconductor layer of the other light emitting unit; and the light converting element is formed in at least a portion of the light emitting region defined by the plurality of light emitting units The light conversion element includes at least one of a red light conversion material and a green light conversion material, wherein the light conversion element is divided into different mixing ratios of at least one of the red light conversion material and the green light conversion material. plural a group, wherein the interconnect structure comprises a first interconnect structure and a second interconnect structure, and at least one of the first interconnect structure and the second interconnect structure has a length greater than each The width of the light emitting unit, wherein the interconnect structure has a length greater than a width of each of the light emitting units, the interconnect structure being disposed in an area of the substrate other than the light emitting unit. A semiconductor light-emitting device comprising: a package substrate; a plurality of multi-chip devices arranged on the package substrate, the multi-chip devices each comprising at least one light-emitting unit, the light-emitting unit comprising a first conductive type semiconductor layer and a second conductive type a semiconductor layer and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer to emit blue light; an interconnect structure, the first conductive semiconductor layer and the second of the light emitting unit At least one of the conductive semiconductor layer is electrically connected to at least one of the first conductive semiconductor layer and the second conductive semiconductor layer of another light emitting unit; and a plurality of light converting elements are disposed on the multi-chip In the light path of the device, the light conversion element includes at least one of a red light conversion material and a green light conversion material, wherein the light conversion elements are divided into at least one of the red light conversion material and the green light conversion material a plurality of groups of different mixing ratios, Wherein the interconnect structure includes a first interconnect structure and a second interconnect structure, and at least one of the first interconnect structure and the second interconnect structure has a length greater than each of the light emitting units a width, wherein the interconnect structure has a length greater than a width of each of the light emitting units, the interconnect structure being disposed in an area of the substrate other than the light emitting unit. The semiconductor light-emitting device of claim 13 or 14, wherein the light-converting element further comprises a yellow light-converting material, the light-converting elements being divided into the red light-converting material and the green light-converting material And a plurality of groups of different mixing ratios of at least one of the yellow light converting materials. The semiconductor light-emitting device of claim 13 or 14, further comprising a plurality of pads connected to the plurality of groups. The semiconductor light-emitting device of claim 16, wherein the current applied to the plurality of groups by the plurality of pads is separately controlled. The semiconductor light-emitting device of claim 13 or 14, wherein the light-converting element comprises a barrier element, and the barrier element is internally filled with the light-converting material. The semiconductor light emitting device of claim 18, wherein the barrier element comprises the same material as the light converting material. The semiconductor light-emitting device of claim 18, wherein the barrier element is formed of the same material as the rest of the light-converting element. A semiconductor light-emitting device comprising: a substrate; a plurality of light-emitting units arranged on the substrate, the light-emitting units each comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and a first conductive semiconductor layer And an active layer between the second conductive semiconductor layer; and the interconnect structure electrically connecting at least one of the first conductive semiconductor layer and the second conductive semiconductor layer of the light emitting unit to another At least one of the first conductive type semiconductor layer and the second conductive type semiconductor layer of the light emitting unit; wherein a part of the light emitting units emit red light, a part of the light emitting units emit green light and the rest emit blue light, Wherein the interconnect structure includes a first interconnect structure and a second interconnect structure, and at least one of the first interconnect structure and the second interconnect structure has a length greater than each of the light emitting units a width, wherein the interconnect structure has a length greater than a width of each of the light emitting units, the interconnect structure being disposed on the substrate other than the light emitting unit Area. The semiconductor light-emitting device according to claim 21, further comprising a base layer formed between the substrate and the first conductive semiconductor layer and connected to the first conductive semiconductor layer of the light-emitting units. The semiconductor light-emitting device of claim 22, wherein the base layer is formed of a first conductive type semiconductor material. The semiconductor light-emitting device of claim 22, wherein The base layer is formed from an undoped semiconductor material. The semiconductor light-emitting device of claim 21, wherein the first conductive semiconductor layer of the light-emitting units is integrally formed.