CN106998029A - Can repetition operating in infrared room-temperature sheet Fe:ZnSe lasers - Google Patents

Can repetition operating in infrared room-temperature sheet Fe:ZnSe lasers Download PDF

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Publication number
CN106998029A
CN106998029A CN201710326083.7A CN201710326083A CN106998029A CN 106998029 A CN106998029 A CN 106998029A CN 201710326083 A CN201710326083 A CN 201710326083A CN 106998029 A CN106998029 A CN 106998029A
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znse
crystal
laser
pumping
reflecting mirror
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Inventor
潘其坤
谢冀江
陈飞
王春锐
于德洋
何洋
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02Constructional details
    • H01S3/04Arrangements for thermal management
    • H01S3/0407Liquid cooling, e.g. by water
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02Constructional details
    • H01S3/025Constructional details of solid state lasers, e.g. housings or mountings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02Constructional details
    • H01S3/04Arrangements for thermal management
    • H01S3/042Arrangements for thermal management for solid state lasers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/163Solid materials characterised by a crystal matrix

Abstract

Can repetition operating in infrared room-temperature sheet Fe:ZnSe lasers, belong to middle infrared solid laser technical field.Solve and how a kind of high efficiency Fe for repeating frequency run at ambient temperature is provided2+:The problem of ZnSe lasers.The laser includes short-pulse laser pumping source, the first focusing completely reflecting mirror, the second focusing completely reflecting mirror, heat sink, Fe2+:ZnSe crystal, water cooled pipeline and laser output mirror, wherein, the pulse width of short-pulse laser pumping source is less than room temperature Fe2+:The life time of the level of ZnSe crystal, wavelength is in Fe2+:In the absorption spectrum ranges of ZnSe crystal, heat sink and Fe2+:ZnSe crystal is set in heat sink by sheet metal sweat soldering, water cooled pipeline, and laser output mirror is used to export Fe2+:ZnSe laser beams.Laser axial direction heat-sinking capability is strong, and repetition rate operating temperature rise is small, and light conversion efficiency is high.

Description

Can repetition operating in infrared room-temperature sheet Fe:ZnSe lasers
Technical field
The present invention relates to it is a kind of can repetition operating in infrared room-temperature sheet Fe2+:ZnSe lasers, belong to middle infrared solid Field of laser device technology.
Background technology
Middle-infrared band laser eye-safe radar, laser spectroscopy, laser medicine, environmental monitoring, laser communication, swash The fields such as optical countermeasures have important application prospect.The ZnSe lasers of transition-metal Fe ion doping have the absorption light of ultra-wide Spectrum and fluorescence Spectra, the infrared competitive novel solid lasing light emitter of 4~4.5 mu m waveband in being.But, Fe2+:On ZnSe crystal Energy level fluorescence lifetime is influenceed significantly by operating temperature, and its life time of the level is about 60 μ s when temperature is less than 180K, but temperature is higher than After 180K, its life time of the level reduces rapidly, and in room temperature 293K, the life time of the level is reduced to 0.38 μ s, and caused by laser pump (ing) Crystal temperature rise will also further drag down Fe2+Ion energy level life-span, therefore, the heat accumulation under repetition operating condition easily cause laser Temperature quenching effect so that Fe2+:ZnSe lasers are difficult to repetition rate operating in room temperature condition.As Martyshkin is reported A kind of repetition rate Fe2+:ZnSe lasers (Martyshkin, et al. " High Average Power (35W) Pulsed Fe:ZnSe laser tunable over 3.8-4.2μm,”in proceedings ofCLEO,2015,paper SF1F.2), 100Hz, 35W mid-infrared laser output are realized in low temperature 77K, but it is wide to be limited to larger pumping source pulse Serious heat accumulation effect under degree and repetition operating condition, the laser can not be operated at ambient temperature.
Firsov reports a kind of repetition rate room temperature Fe2+:ZnSe lasers (Firsov, et al. " Spectral and temporal characteristics ofa ZnSe:Fe2+laserpumped by a non-chain HF(DF)laser At roomtemperature, " LaserPhys.Lett.2014,11, pp.125004.), it is only tens of receive that he, which employs pulsewidth, Second (is less than room temperature Fe2+The ion energy level life-span) hydrogen fluoride/bar-shaped Fe of fluorination deuterium laser pumping source pumping2+:ZnSe(φ20mm × 4.5mm) crystal, realize Fe2+:ZnSe laser room temperatures repetition rate is operated, but its light conversion efficiency is only 10.9%, far Less than using similar device under pulse operating condition 40% light conversion efficiency (Firsov, et al. " Room- temperature laser on a ZnSe:Fe2+polycrystal with undoped faces,excitedby an Electrodischarge HF laser, " LaserPhys.Lett.2016,13055002), it is serious caused by repetition pumping Heat accumulation is to cause Fe2+:The low main cause of ZnSe lasers repetition work light conversion efficiency.Current repetition rate room temperature In infrared Fe2+:ZnSe lasers are difficult to meet the application demand in industry, national defence and scientific research field.
The content of the invention
Present invention aim to address Fe in the prior art2+:ZnSe lasers can not ensure the basis of light conversion efficiency On, at room temperature operate the problem of there is provided it is a kind of can repetition operating in infrared room-temperature sheet Fe2+:ZnSe lasers.
The technical scheme that present invention solution above-mentioned technical problem is taken is as follows.
Can repetition operating in infrared room-temperature sheet Fe2+:ZnSe lasers, including:Short-pulse laser pumping source, first gather Burnt completely reflecting mirror, second focus on completely reflecting mirror, heat sink, Fe2+:ZnSe crystal, water cooled pipeline and laser output mirror;
The pulse width of the short-pulse laser pumping source is less than room temperature Fe2+:The life time of the level of ZnSe crystal, wavelength is in Fe2+:In the absorption spectrum ranges of ZnSe crystal;
Fe is injected after the pump beam shaping that the first focusing completely reflecting mirror exports short-pulse laser pumping source2+: ZnSe crystal;
Described second number for focusing on completely reflecting mirror is x/2-1, and x is pumping number of passes, and second focuses on completely reflecting mirror will not By Fe2+:The pump beam of ZnSe absorption of crystal is reflected back Fe2+:ZnSe crystal;
Described heat sink and Fe2+:ZnSe crystal is by sheet metal sweat soldering, and sheet metal is indium sheet or tin piece;
The Fe2+:ZnSe crystal uses highly doped thin plate crystals, and the one side plating pumping through sheet metal and heat sink contact swashs The anti-reflection film of the high-reflecting film of light and resonant laser light, another side plating pumping laser and resonant laser light, Fe2+:The crystal of ZnSe crystal is thick Degree d and doping concentration n between relational expression be:
In formula, d is crystal thickness, and θ is pumping angle of light, and I is crystal output intensity, I0For incident intensity, n be Fe from Sub- doping concentration, σ is absorption cross-section;
Fe2+:ZnSe absorption of crystal first focuses on the pump beam that completely reflecting mirror is injected, will be not by Fe2+:ZnSe crystal is inhaled The pump beam of receipts reflexes to the second focusing completely reflecting mirror, and absorbs the second pump beam for focusing on completely reflecting mirror injection;
The water cooled pipeline is arranged in heat sink, by Fe2+:The heat that ZnSe laser crystal is produced is rapid by cooling water band Walk;
The laser output mirror plates the semi-transparent semi-reflecting film of resonant laser light, laser output mirror and Fe2+:ZnSe crystal common optical axis is set Put, with Fe2+:The highly reflecting films of ZnSe crystal rear end faces constitute laserresonator, for exporting Fe2+:ZnSe laser beams.
Further, the short-pulse laser pumping source is that wavelength is 2.94 μm of tune Q Er:YAG laser, 2.7 μm of non-chains Formula pulse hydrogen fluoride laser, or 3.8 μm of non-chain pulsed deuterium fluoride lasers.
Further, it is described first focus on completely reflecting mirror and second focus on completely reflecting mirror be pumping laser high reflection mirror.
Further, the x is four, and second focuses on completely reflecting mirror for one.
Further, it is described heat sink provided with groove, Fe2+:ZnSe crystal is arranged in groove.
Further, it is described it is heat sink for copper it is heat sink.
Further, it is determined that pump light incidence angle θ, crystal output intensity I and incident intensity I0Afterwards, first basis gives Pumping number of passes, determines the corresponding numerical relation of crystal thickness and Fe ion doping concentration, is radiated further according to the axial direction of crystal thickness The complexity of effect and Optical Maser System structure, determines Fe2+:The pumping number of passes and crystal thickness of ZnSe lasers.
Further, the sheet thicknesses scope is 50 μm~1mm, heat sink and Fe2+:ZnSe crystal passes through sheet metal heat Fusion welding.
Compared with prior art, the beneficial effects of the invention are as follows:
The present invention can repetition operating in infrared room-temperature sheet Fe2+:ZnSe lasers, using Fe2+:ZnSe crystal is thin Piece, with good axial capacity of heat transmission, axial heat-sinking capability is strong, and Fe2+:ZnSe crystal is heated with heat sink by sheet metal Welding, realizes good radiating, makes the heat energy that pumping is produced quickly through heat sink heat loss through conduction, eliminates laser repetition rate Fe caused by heat accumulation effect and crystal temperature rise during operating2+:ZnSe laser temperature quenching effects, even if in repetition rate pump Under the conditions of Pu, crystals will not also produce significant temperature rise, meet Fe2+:ZnSe laser room temperature repetition rate operational requirements, With more preferable practicality;Now, the laser pumping source of the room temperature iron ion life time of the level is less than using Pump duration, passes through two pieces Total reflection focus lamp above realizes multi-pass laser pumping, effectively lifting pumping laser light absorbing efficiency, in laserresonator feedback Under effect, high efficiency, stable repetition rate mid-infrared laser can be achieved and exports.
Brief description of the drawings
Fig. 1 for the present invention can repetition operating in infrared room-temperature sheet Fe2+:ZnSe laser structure schematic diagrames;
Fig. 2 for the present invention to pumping light intensity absorption 90% when, Fe2+:Number between the thickness and doping concentration of ZnSe crystal Value relation;
In figure, 1, short-pulse laser pumping source, 2, first focuses on completely reflecting mirror, and 3, second focuses on completely reflecting mirror, and 4, heat sink, 5、Fe2+:ZnSe crystal, 6, sheet metal, 7, water cooled pipeline, 8, laser output mirror.
Embodiment
To further illustrate the feature and structure of the present invention, the present invention is described in detail below in conjunction with the accompanying drawings.
Such as Fig. 1, it is of the invention it is a kind of can infrared room-temperature sheet Fe in repetition operating2+:ZnSe lasers, including:Short arteries and veins Impulse optical pumping source 1, first focuses on completely reflecting mirror 2, second and focuses on completely reflecting mirror 3, heat sink 4, Fe2+:ZnSe crystal 5, water cooling tube Road 7 and laser output mirror 8.
Wherein, the pulse width of short-pulse laser pumping source 1 is less than room temperature Fe2+:The life time of the level (370ns) of ZnSe crystal, Wavelength is in Fe2+:In ZnSe absorption of crystal spectral regions (2.5~4 μm).Such as can select wavelength is 2.94 μm of tune Q Er:YAG swashs Light device, the non-chain pulsed hydrogen fluoride laser of 2.7 μm of centre wavelength or the non-chain pulsed fluorination deuterium laser of 3.8 μm of centre wavelength Device.Present embodiment selects all solid state Er of tune Q of semiconductor laser pumping:YAG laser is pumping source, can effectively lift effect Rate, compressibility volume.
It is pumping laser high reflection mirror that first focusing completely reflecting mirror 2 and second, which focuses on completely reflecting mirror 3, and its function is to turn back Light path and regulation pumping laser energy density.Second focuses on the quantity of completely reflecting mirror 3 for zero, one or more, with specific reference to Pumping number of passes x is determined, is x/2-1, and such as pumping number of passes is 4, and second focuses on completely reflecting mirror 3 for 1, is focused on by increase and decrease second complete The quantity of speculum 3 can conveniently adjust the number of transmissions of the pumping laser in laser crystal.
Heat sink 4 are provided with groove, for accommodating Fe2+:ZnSe crystal 5.Heat sink 4 generally copper are heat sink.Heat sink 4 and Fe2+: Achieved a fixed connection between ZnSe crystal 5 by sheet metal 6.The material of sheet metal 6 is tin piece or indium sheet, and thickness range is 50 μm~1mm, Fe2+:ZnSe crystal 5 and sheet metal 6 are in close contact, and Fe is realized by the hot melt of sheet metal 62+:ZnSe crystal 5 and heat Heavy 4 welding, room temperature is cooled to after the completion of welding rapidly.Such as sheet metal 6 is indium sheet, and the thickness of indium sheet is 100 μm, is laid in heat On heavy 4, Fe2+:ZnSe crystal 5 is slightly compressed in indium sheet, keeps Fe2+:ZnSe crystal 5 and indium sheet are in close contact, in 160 DEG C of temperature Under the conditions of, indium sheet hot melt (156.61 DEG C of fusing point), so as to realize Fe2+:ZnSe crystal 5 and heat sink 4 sweat soldering.
Fe2+:ZnSe crystal 5 uses highly doped thin plate crystals, infrared room temperature repetition rate Fe in being2+:ZnSe lasers Core, the one side that it is contacted with heat sink 4 through sheet metal 6 plates the high-reflecting film of pumping laser and resonant laser light, to reduce crystal terminal Face transmission loss, while the highly reflecting films of resonant laser light are equivalent to Fe2+:ZnSe lasers are totally reflected Effect of Back-Cavity Mirror, another side plating pump The anti-reflection film of Pu laser and resonant laser light, to reduce crystal plane of incidence transmission loss.One notable feature of thin-sheet laser is just It is that laser crystal is thin slice (typical thickness is less than 0.5mm), thin plate crystals thickness is smaller, and crystal axial direction heat-sinking capability is better, brilliant Body temperature rises smaller, is more conducive to repetition steady operation.But laser crystal thickness is smaller, Doped ions are inhaled to the one way of pumping laser Receipts ability is weaker, is unfavorable for the efficient pumping of laser, therefore, and crystal doping concentration and crystal thickness design are most important.The present invention Fe2+:The absorption coefficient expression formula of ZnSe crystal 5 is:N is Fe ion doping concentration in a=σ × n, formula, and σ is absorption cross-section (0.97×10-18cm2).According to the primary law of youth:I=I0e-al, I is crystal output intensity, I0For incident intensity, l is that pump light exists Transmission range in crystal.If crystal thickness is d, pump light incidence angle θ, transmission range l=d/con of the pump light in crystal (θ), then under x journey pumping conditions (transmission range of the pump light in crystal is xl), between crystal thickness d and doping concentration n Relational expression be:
It is determined that pump light incidence angle θ, Fe2+:Absorption (1-I/I0) of the ZnSe crystal to pumping laser, and number of passes x In the case of, it can conveniently determine Fe2+:ZnSe laser crystals doping concentration and crystal thickness parameter.According to Fe2+:ZnSe laser is brilliant The axial radiating effect of body thickness and the complexity of Optical Maser System structure, determine the pumping number of passes and Fe of laser2+:ZnSe Laser crystal thickness.Such as:It is 60 °, Fe in pump light incidence angle θ2+:Absorption (1-I/I of the ZnSe crystal to pumping laser0)= When 90%, the numerical relation between crystal thickness d and doping concentration n is calculated, as a result such as Fig. 2, figure it is seen that round trip pumping When, Fe2+:ZnSe laser crystal thickness is larger, the axial radiating effect of influence, and during six journey pumpings, Fe2+:ZnSe laser crystal is thick Degree is relatively thin, and with good heat-sinking capability, but during six journey pumpings, Optical Maser System structure is complex, therefore, and crystal thickness is fitted In quadruple pass pumping be preferred scheme, if now crystal doping concentration 1 × 1019cm-3, thin plate crystals thickness is 300 μm.
Water cooled pipeline 7 is set in heat sink 4, under the conditions of outer water receiving cold, by Fe2+:The heat that ZnSe crystal 5 is produced is rapid Taken away by cooling water, during laser works, keep Fe2+:The temperature of ZnSe crystal 5 is constant.
Laser output mirror 8 selects CaF2Substrate, plates resonant laser light (4.3 μm) semi-transparent semi-reflecting film, it and Fe2+:ZnSe crystal 5 Set in common optical axis, with Fe2+:The highly reflecting films that the rear end face of ZnSe crystal 5 is plated constitute laserresonator, realize Fe2+:ZnSe Laser feedback and energy extraction, under short-pulse laser pumping condition, can be achieved Fe2+:ZnSe laser room temperatures repetition rate is stable Operating.
The pumping light path of the present invention is moved towards:
If pumping number of passes is two, the output pump beam of short-pulse laser pumping source 1, pump beam is by short-pulse laser pumping Fe is injected in source 1 after exporting after the first focusing shaping of completely reflecting mirror 22+:ZnSe crystal 5 completes the first journey pumping, afterwards pump light Beam is by Fe2+:The reflection of the rear end face of ZnSe crystal 5 completes the second journey pumping, in the process, Fe2+:The absorptive pumping light of ZnSe crystal 5 Beam, Fe2+:ZnSe laser is exported through laser output mirror 8.
If pumping number of passes is 2m (m is the integer more than or equal to 2), the output pump beam of short-pulse laser pumping source 1, pumping Light beam by short-pulse laser pumping source 1 export after through first focusing the shaping of completely reflecting mirror 2 after inject Fe2+:ZnSe crystal 5 completes the One journey pumping, pump beam is by Fe afterwards2+:The reflection of the rear end face of ZnSe crystal 5 completes the second journey pumping, in the process, Fe2+: The absorptive pumping light beam of ZnSe crystal 5, unabsorbed pump beam is by Fe2+:One second focusing of directive after the outgoing of ZnSe crystal 5 Completely reflecting mirror 3, adjustment second focuses on the angle of completely reflecting mirror 3 so that pump beam is reflected back Fe again2+:ZnSe crystal 5 completes the Three-throw pump Pu, pump beam is by Fe afterwards2+:The reflection of the rear end face of ZnSe crystal 5 completes quadruple pass pumping, in the process, Fe2+: The absorptive pumping light beam of ZnSe crystal 5;If pumping number of passes is completed, light path terminates, if pumping number of passes is not completed, unabsorbed pumping Light beam is by Fe2+:Another the second focusing completely reflecting mirror 3 of directive, continues remaining pumping number of passes, until complete after the outgoing of ZnSe crystal 5 Into;Fe2+:ZnSe laser is exported through laser output mirror 8.

Claims (8)

1. can repetition operating in infrared room-temperature sheet Fe2+:ZnSe lasers, it is characterised in that including:Short-pulse laser pumping Source (1), first focus on completely reflecting mirror (2), the second focusing completely reflecting mirror (3), heat sink (4), Fe2+:ZnSe crystal (5), water cooling tube Road (7) and laser output mirror (8);
The pulse width of the short-pulse laser pumping source (1) is less than room temperature Fe2+:At the life time of the level of ZnSe crystal (5), wavelength In Fe2+:In the absorption spectrum ranges of ZnSe crystal (5);
Fe is injected after the pump beam shaping that the first focusing completely reflecting mirror (2) exports short-pulse laser pumping source (1)2+: ZnSe crystal (5);
Described second number for focusing on completely reflecting mirror (2) is x/2-1, and x is pumping number of passes, and second focuses on completely reflecting mirror (3) will Not by Fe2+:The pump beam that ZnSe crystal (5) absorbs is reflected back Fe2+:ZnSe crystal (5);
Heat sink (4) and Fe2+:ZnSe crystal (5) is by sheet metal (6) sweat soldering, and sheet metal (6) is indium sheet or tin Piece;
The Fe2+:ZnSe crystal (5) uses highly doped thin plate crystals, and the one side contacted through sheet metal (6) with heat sink (4) is plated The anti-reflection film of the high-reflecting film of pumping laser and resonant laser light, another side plating pumping laser and resonant laser light, Fe2+:ZnSe crystal (5) Crystal thickness d and doping concentration n between relational expression be:
d = - c o s ( θ ) σ n x l n ( I / I 0 )
In formula, d is crystal thickness, and θ is pumping angle of light, and I is crystal output intensity, I0For incident intensity, n is that Fe ions are mixed Miscellaneous concentration, σ is absorption cross-section;
Fe2+:ZnSe crystal (5) absorbs first and focuses on the pump beam that completely reflecting mirror (2) is injected, will be not by Fe2+:ZnSe crystal (5) pump beam absorbed reflexes to the second focusing completely reflecting mirror (2), and absorbs the second pump for focusing on completely reflecting mirror (2) injection Pu light beam;
The water cooled pipeline (7) is arranged in heat sink (4), by Fe2+:The heat that ZnSe laser crystal is produced is rapid by cooling water band Walk;
The laser output mirror (8) plates the semi-transparent semi-reflecting film of resonant laser light, laser output mirror (8) and Fe2+:The common light of ZnSe crystal (5) Axle is set, with Fe2+:The highly reflecting films of ZnSe crystal (5) rear end face constitute laserresonator, for exporting Fe2+:ZnSe laser Beam.
2. it is according to claim 1 can repetition operating in infrared room-temperature sheet Fe2+:ZnSe lasers, it is characterised in that The short-pulse laser pumping source (1) is that wavelength is 2.94 μm of tune Q Er:YAG laser, 2.7 μm of non-chain pulsed hydrogen fluoride swash Light device, or 3.8 μm of non-chain pulsed deuterium fluoride lasers.
3. it is according to claim 1 can repetition operating in infrared room-temperature sheet Fe2+:ZnSe lasers, it is characterised in that The first focusing completely reflecting mirror (2) and the second focusing completely reflecting mirror (3) are pumping laser high reflection mirror.
4. it is according to claim 1 can repetition operating in infrared room-temperature sheet Fe2+:ZnSe lasers, it is characterised in that The x is four, and second focuses on completely reflecting mirror (3) for one.
5. it is according to claim 1 can repetition operating in infrared room-temperature sheet Fe2+:ZnSe lasers, it is characterised in that Described heat sink (4) are provided with groove, Fe2+:ZnSe crystal (5) is arranged in groove.
6. it is according to claim 1 can repetition operating in infrared room-temperature sheet Fe2+:ZnSe lasers, it is characterised in that Described heat sink (4) are that copper is heat sink.
7. it is according to claim 1 can repetition operating in infrared room-temperature sheet Fe2+:ZnSe lasers, it is characterised in that It is determined that pump light incidence angle θ, crystal output intensity I and incident intensity I0Afterwards, crystal is first determined according to given pumping number of passes The corresponding numerical relation of thickness and Fe ion doping concentration, further according to the axial radiating effect and Optical Maser System knot of crystal thickness The complexity of structure, determines Fe2+:The pumping number of passes and crystal thickness of ZnSe lasers.
8. it is according to claim 1 can repetition operating in infrared room-temperature sheet laser, it is characterised in that the metal Piece (6) thickness range is 50 μm~1mm, heat sink (4) and Fe2+:ZnSe crystal (5) passes through sheet metal (6) sweat soldering.
CN201710326083.7A 2017-05-10 2017-05-10 Can repetition operating in infrared room-temperature sheet Fe:ZnSe lasers Pending CN106998029A (en)

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CN107394571A (en) * 2017-08-07 2017-11-24 中国电子科技集团公司第十研究所 The method for packing and slab laser crystal of a kind of slab laser crystal
CN109713560A (en) * 2019-02-12 2019-05-03 暨南大学 Towards the double-doped laser crystal of iron erbium infrared in 3.0 ~ 5.0 microns of all solid lasers
CN112271547A (en) * 2020-09-07 2021-01-26 中国科学院空天信息创新研究院 Room-temperature large-energy Fe-CdTe mid-infrared laser
CN112467508A (en) * 2021-01-28 2021-03-09 四川光天下激光科技有限公司 Narrow pulse width laser
CN112582869A (en) * 2020-12-08 2021-03-30 中国工程物理研究院激光聚变研究中心 Infrared laser in lamp pump

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Publication number Priority date Publication date Assignee Title
CN107394571A (en) * 2017-08-07 2017-11-24 中国电子科技集团公司第十研究所 The method for packing and slab laser crystal of a kind of slab laser crystal
CN107394571B (en) * 2017-08-07 2019-07-16 中国电子科技集团公司第十一研究所 A kind of packaging method and slab laser crystal of slab laser crystal
CN109713560A (en) * 2019-02-12 2019-05-03 暨南大学 Towards the double-doped laser crystal of iron erbium infrared in 3.0 ~ 5.0 microns of all solid lasers
CN112271547A (en) * 2020-09-07 2021-01-26 中国科学院空天信息创新研究院 Room-temperature large-energy Fe-CdTe mid-infrared laser
CN112582869A (en) * 2020-12-08 2021-03-30 中国工程物理研究院激光聚变研究中心 Infrared laser in lamp pump
CN112467508A (en) * 2021-01-28 2021-03-09 四川光天下激光科技有限公司 Narrow pulse width laser
CN112467508B (en) * 2021-01-28 2021-06-08 四川光天下激光科技有限公司 Narrow pulse width laser

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