CN106992254B - Encapsulating structure, its production method and its apply - Google Patents
Encapsulating structure, its production method and its apply Download PDFInfo
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- CN106992254B CN106992254B CN201610031100.XA CN201610031100A CN106992254B CN 106992254 B CN106992254 B CN 106992254B CN 201610031100 A CN201610031100 A CN 201610031100A CN 106992254 B CN106992254 B CN 106992254B
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- layer
- flexible substrate
- preprocessing
- encapsulating structure
- aqueous vapor
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 105
- 238000007781 pre-processing Methods 0.000 claims abstract description 85
- 238000000926 separation method Methods 0.000 claims abstract description 82
- 239000000463 material Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 33
- 230000008569 process Effects 0.000 claims abstract description 20
- 238000011049 filling Methods 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 317
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 41
- 238000000576 coating method Methods 0.000 claims description 32
- 239000011248 coating agent Substances 0.000 claims description 26
- 239000010408 film Substances 0.000 claims description 26
- 239000010409 thin film Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000012790 adhesive layer Substances 0.000 claims description 17
- 229920000642 polymer Polymers 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- -1 poly- ammonia Ester Chemical class 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 238000005524 ceramic coating Methods 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 8
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 239000004925 Acrylic resin Substances 0.000 claims description 5
- 229920000178 Acrylic resin Polymers 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 5
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 239000004812 Fluorinated ethylene propylene Substances 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 208000028659 discharge Diseases 0.000 claims description 3
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 claims description 3
- 125000002573 ethenylidene group Chemical group [*]=C=C([H])[H] 0.000 claims description 3
- 229920009441 perflouroethylene propylene Polymers 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- CHJAYYWUZLWNSQ-UHFFFAOYSA-N 1-chloro-1,2,2-trifluoroethene;ethene Chemical group C=C.FC(F)=C(F)Cl CHJAYYWUZLWNSQ-UHFFFAOYSA-N 0.000 claims description 2
- 229920001780 ECTFE Polymers 0.000 claims description 2
- 239000002033 PVDF binder Substances 0.000 claims description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000003973 paint Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 19
- 230000000694 effects Effects 0.000 abstract description 9
- 230000004888 barrier function Effects 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 12
- 238000007761 roller coating Methods 0.000 description 11
- KUDUQBURMYMBIJ-UHFFFAOYSA-N 2-prop-2-enoyloxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC(=O)C=C KUDUQBURMYMBIJ-UHFFFAOYSA-N 0.000 description 10
- 239000000178 monomer Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 238000001035 drying Methods 0.000 description 8
- 230000032683 aging Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000002861 polymer material Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000011527 polyurethane coating Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000003682 fluorination reaction Methods 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229920006135 semi-crystalline thermoplastic polymer Polymers 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000052 vinegar Substances 0.000 description 2
- 235000021419 vinegar Nutrition 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 125000004386 diacrylate group Chemical group 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000007701 flash-distillation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- TZMQHOJDDMFGQX-UHFFFAOYSA-N hexane-1,1,1-triol Chemical compound CCCCCC(O)(O)O TZMQHOJDDMFGQX-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of encapsulating structure, its production method and its apply.The production method is the following steps are included: production flexible substrate layer；Preprocessing layer is formed on the first surface of flexible substrate layer, for filling recess and the gap of first surface；Aqueous vapor separation layer is formed on the surface of the separate flexible substrate layer of preprocessing layer.Since the production method is by being arranged aqueous vapor separation layer in preprocessing layer, the preprocessing layer is capable of recess and the gap of the first surface of filling flexible substrate layer, make the smooth surface of flexible substrate layer, that is, realizes the effect for carrying out planarization process to the surface of flexible substrate layer；Meanwhile the aqueous vapor separation layer of the application is prepared using the common water vapor rejection material of the prior art, to improve the flexibility and flexible energy of the aqueous vapor separation layer.So that the encapsulating structure of the application production not only has good water vapor rejection effect, but also there is good flexibility.
Description
Technical field
The present invention relates to field of material technology, in particular to a kind of encapsulating structure, its production method and its apply.
Background technique
In recent years, energy problem is outstanding day by day, and new energy is quickly grown, and solar energy is as a kind of important renewable
The energy is increasingly valued by people, and large-scale use.Solar energy generation technology traditional at present is crystal silicon battery skill
Art makes solar energy be converted into electric energy by forming crystal silicon solar power generation panel.But there is also some for crystal silicon battery technology
Fastly close to its theoretical limit, the rising space is little for disadvantage, mainly its incident photon-to-electron conversion efficiency, in addition the crisp characteristic of silicon materials
But also it can not become flexible and be applied on building wall and lightweight roof on a large scale.
Thin-film solar cells lightweight can be combined with light roof and metope well convenient for flexibility, and photoelectricity turns
Change efficiency also constantly to be promoted, and can compare favourably with the crystal silicon battery of mainstream.Therefore thin-film solar cells receives industrial circle
Attention.
Current thin film solar battery mainly has following a few classes: (1) CIGS battery, (2) organic matter solar battery
(OPV), (3) dye-sensitized cell (DSSC), (4) Ca-Ti ore type solar battery (Perovskite).In this few class battery
Core material is all very sensitive to steam, is exposed in atmospheric environment and is all extremely easy to happen the decaying of generating efficiency, therefore just
The encapsulating structure for needing barrier steam infiltration carries out protection processing to it.
It is relatively effective to be used to obstruct steam and can guarantee that the unattenuated material of the generating efficiency of battery is glass, but glass
Glass not can guarantee the flexibility of battery component, and the material as encapsulation battery seems very heavy, for hull cell flexible
For be not very applicable.Therefore, it is urgent to provide one kind to have both barrier property and encapsulating material flexible in the prior art.
Summary of the invention
The main purpose of the present invention is to provide a kind of encapsulating structure, its production method and its apply, to solve existing skill
The encapsulating material of production method production in art cannot achieve while having barrier steam performance but also with flexible problem.
To achieve the goals above, according to an aspect of the invention, there is provided a kind of production method of encapsulating structure, packet
Include following steps: production flexible substrate layer；Preprocessing layer is formed on the first surface of flexible substrate layer, for filling the first table
The recess in face and gap；Aqueous vapor separation layer is formed on the surface of the separate flexible substrate layer of preprocessing layer.
Further, the process for making flexible substrate layer includes: to carry out discharge treatment, fire to the surface of transparent polymer layer
Flame pretreatment or chemical pretreatment, form the flexible substrate layer with bonding surface.
Further, the step of forming preprocessing layer includes: to be coated with acrylic compounds on the first surface of flexible substrate layer
The solution of resin；The solvent of solution is removed to form preprocessing layer, and preprocessing layer with a thickness of nanoscale, preferably 75~
90nm。
Further, the step of forming aqueous vapor separation layer includes: to claim to deposit using physical vapour deposition (PVD) or chemical gaseous phase
Technique grows inorganic oxide on the surface of the separate flexible substrate layer of preprocessing layer, obtains aqueous vapor separation layer, preferably inorganic
Oxide is silica, titanium oxide or aluminium oxide.
Further, before the step of forming aqueous vapor separation layer, production method further includes hindering in preprocessing layer and steam
The step of hardening coat is formed between interlayer.
Further, the step of forming hardening coat includes: to apply on the surface of the separate flexible substrate layer of preprocessing layer
Cured coating is covered, cured coating is any one of polyurethane coating, inorganic nano ceramic coating and radiation curable coating or more
Kind；Cured coating is solidified, hardening coat is formed.
Further, after the step of forming aqueous vapor separation layer, production method further includes in the separate of aqueous vapor separation layer
The step of fluoride layer is formed on the surface of preprocessing layer.
Further, the step of forming fluoride layer includes: to be coated on the surface of the separate preprocessing layer of aqueous vapor separation layer
The material of fluoride forms fluoride layer.
Further, the material of fluoride is tetrafluoroethene and/or vinylidene.
Further, the process for forming fluoride layer includes: to set on the surface of the separate preprocessing layer of aqueous vapor separation layer
Set adhesive layer；Fluoride films are set on the surface of adhesive layer.
Further, fluoride films are ethylene-tetrafluoroethylene copolymer film, fluorinated ethylene propylene copolymer film, ethylene three
Fluorine vinyl chloride copolymer film or polyvinylidene fluoride film.
According to another aspect of the present invention, a kind of encapsulating structure is provided, encapsulating structure is made by above-mentioned production method
It forms.
In accordance with a further aspect of the present invention, a kind of thin-film solar cells, including encapsulating structure are provided, encapsulating structure is
Above-mentioned encapsulating structure.
According to another aspect of the present invention, a kind of organic light-emitting display device, including encapsulating structure, encapsulating structure are provided
For above-mentioned encapsulating structure.
It applies the technical scheme of the present invention, the present invention provides a kind of production methods of encapsulating structure, due to the production side
For method by being arranged aqueous vapor separation layer in preprocessing layer, which is capable of the recessed of the first surface of filling flexible substrate layer
Sunken and gap makes the smooth surface of flexible substrate layer, that is, realizes and carry out planarization process to the surface of flexible substrate layer
Effect, the planarization that flexible substrate layer pre-sets the surface of aqueous vapor separation layer have important shadow to the deposition quality of aqueous vapor separation layer
It rings, it is better to planarize, and the aqueous vapor separation layer of deposition is finer and close, and defect is fewer, and barrier property is also better；Meanwhile the application
Aqueous vapor separation layer is using the common water vapor rejection material preparation of the prior art, because existing water vapor rejection layer material is mainly
Inorganic material, to improve the flexibility and flexible energy of the aqueous vapor separation layer.So that the encapsulating structure of the application production
Not only there is good water vapor rejection effect, but also there is good flexibility；And then above-mentioned encapsulating structure is formed into film too
When positive energy battery, thin-film solar cells is not only avoided due to damaging caused by steam or oxygen entrance, improves film
The reliability of solar battery, and ensure that the flexibility of thin-film solar cells, also enable encapsulating structure more secured
Ground is set on cell matrix, improves the adhesive force of encapsulating structure in thin-film solar cells；Separately by the encapsulation of above-mentioned production
When structure setting is in organic light-emitting display device, not only avoid organic light-emitting display device since steam or oxygen enter and
Caused damage, improves the reliability of organic light-emitting display device, and also improves the flexibility of organic light-emitting display device
Application value.
Other than objects, features and advantages described above, there are also other objects, features and advantages by the present invention.
Below with reference to figure, the present invention is described in further detail.
Detailed description of the invention
The Figure of description for constituting a part of the invention is used to provide further understanding of the present invention, and of the invention shows
Examples and descriptions thereof are used to explain the present invention for meaning property, does not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 shows a kind of flow diagram of the production method of encapsulating structure provided by the application embodiment；
Fig. 2 shows a kind of the schematic diagram of the section structure of the encapsulating structure made using production method provided by Fig. 1；
Fig. 3 shows the encapsulation knot formed after hardening coat on the surface of the preprocessing layer of encapsulating structure shown in Fig. 2
The schematic diagram of the section structure of structure；
The surface that Fig. 4 shows the aqueous vapor separation layer of encapsulating structure shown in Fig. 3 forms the encapsulation knot after fluoride layer
The schematic diagram of the section structure of structure；And
After the surface that Fig. 5 shows the aqueous vapor separation layer of encapsulating structure shown in Fig. 3 forms adhesive layer and fluoride layer
Encapsulating structure the schematic diagram of the section structure.
Specific embodiment
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.The present invention will be described in detail below with reference to the accompanying drawings and embodiments.
In order to enable those skilled in the art to better understand the solution of the present invention, below in conjunction in the embodiment of the present invention
Attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
The embodiment of a part of the invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill people
The model that the present invention protects all should belong in member's every other embodiment obtained without making creative work
It encloses.
It should be noted that description and claims of this specification and term " first " in above-mentioned attached drawing, "
Two " etc. be to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should be understood that using in this way
Data be interchangeable under appropriate circumstances, so as to the embodiment of the present invention described herein.In addition, term " includes " and " tool
Have " and their any deformation, it is intended that cover it is non-exclusive include, for example, containing a series of steps or units
Process, method, system, product or equipment those of are not necessarily limited to be clearly listed step or unit, but may include without clear
Other step or units listing to Chu or intrinsic for these process, methods, product or equipment.
It can be seen from background technology that it is urgent to provide one kind to have both barrier property and encapsulating material flexible in the prior art.This
The discovery when inventor of invention studies regarding to the issue above, if the aqueous vapor separation layer of the prior art is set up directly on soft
Property substrate layer, the water vapor rejection performance of the encapsulating material of production is unsatisfactory, and this application provides a kind of encapsulating structures thus
Production method, as shown in Figure 1, comprising the following steps: production flexible substrate layer；Before being formed on the first surface of flexible substrate layer
Process layer, for filling recess and the gap of first surface；Water is formed on the surface of the separate flexible substrate layer of preprocessing layer
Vapor barrier coatings.
Since above-mentioned production method is by being arranged aqueous vapor separation layer 40 in preprocessing layer 20, which can
The recess of the first surface of filling flexible substrate layer 10 and gap make the smooth surface of flexible substrate layer 10, i.e. realization pair
The surface of flexible substrate layer 10 carries out the effect of planarization process, and flexible substrate layer 10 pre-sets the flat of the surface of aqueous vapor separation layer
Smoothization has an important influence the deposition quality of aqueous vapor separation layer 40, and it is better to planarize, and the aqueous vapor separation layer 40 of deposition is finer and close,
Defect is fewer, and barrier property is also better；Meanwhile the aqueous vapor separation layer 40 of the application uses the common water vapor rejection of the prior art
Material preparation, because existing water vapor rejection layer material is mainly inorganic material, to improve the aqueous vapor separation layer 40
Flexibility and flexible energy.So that the encapsulating structure of the application production not only has good water vapor rejection effect, but also have
There is good flexibility.
A kind of encapsulating structure using the production of above-mentioned production method is as shown in Fig. 2, include flexible substrate layer 10, preprocessing layer
20 and aqueous vapor separation layer 40；Preprocessing layer 20 is set on the first surface of flexible substrate layer 10, for filling first surface
Recess and gap；Aqueous vapor separation layer 40 is set to the side of the separate flexible substrate layer 10 of preprocessing layer 20.
The exemplary reality of the preparation method of the encapsulating structure provided according to the present invention is provided below in conjunction with Fig. 2
Apply mode.However, these illustrative embodiments can be implemented by many different forms, and it is not construed as only
It is limited to embodiments set forth herein.It should be understood that thesing embodiments are provided so that disclosure herein
It is thoroughly and complete, and the design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art.
Firstly, production flexible substrate layer 10.It can be by there is the extrusion die of extruder after melting transparent polymer material
Head biaxial tension is extruded into above-mentioned flexible substrate layer 10.The material for being preferably made from flexible substrate layer 10 is transparent polymer
Material.Transparent polymer material can be semi-crystalline thermoplastic polymer, non-crystalline polymer and noncrystalline high glass transition
Temperature poymer, such as PI, PET and PEN.It is further preferable that transparent polymer material is PET or PEN, due to polyester PET or PEN
There is well dynamic flexibility, mechanical property and simple process, and optical transmittance as semi-crystalline thermoplastic polymer
90% or more, therefore, flexible substrate layer 10 is made in PET or PEN, flexible substrate layer 10 can be made with higher light transmittance
While, additionally it is possible to flexibility with higher.
The process of above-mentioned production flexible substrate layer 10 can also include: to carry out at electric discharge to the surface of transparent polymer layer
Reason, flame pretreatment or chemical pretreatment form the flexible substrate layer 10 with bonding surface.I.e. above-mentioned flexible substrate layer 10
Raw material can be transparent polymer material.What is carried out in the case where there is suitable reactive or non-reacted atmospheric environment puts
Electricity, chemical pretreatment or flame pretreatment etc. can make flexible substrate layer have higher cohesive force, to make flexible substrate layer
10 can preferably be adhered to preprocessing layer 20 on its surface and not easily to fall off.
In a preferred embodiment, above-mentioned chemical pretreatment includes: by deploying KMnO4It is mixed with strong acid formation
Solution, strong acid are mainly the solution such as hydrochloric acid, sulfuric acid and nitric acid, are carried out at a certain temperature with the surface of transparent polymer layer anti-
It answers, so that the surface of transparent polymer layer forms active group, to improve the adhesive force on its surface.
After the step of making flexible substrate layer 10, preprocessing layer is formed on the first surface of flexible substrate layer 10
20, for filling recess and the gap of first surface.The preprocessing layer 20 being formed on 10 surface of flexible substrate layer and flexible base
Material layer 10 contacts, and is capable of fluctuating and the gap on 10 surface of filling flexible substrate layer, to improve the smooth of 10 surface of flexible substrate layer
Smoothness is kept away to not only enable connection of the flexible substrate layer 10 for being provided with preprocessing layer 20 with other layers more closely
It is flat cohesive force decline between layers, the surface for also improving entire encapsulating structure caused by the presence due to gap have been exempted from
Whole degree enables encapsulating structure to be more securely arranged in not easily to fall off on cell matrix, ensure that encapsulating structure to battery base
The encapsulation and protective effect of body.
Preferably, the step of forming preprocessing layer 20 includes: to be coated with acrylic acid on the first surface of flexible substrate layer 10
The solution of resinoid；The solvent of solution is removed to form preprocessing layer 20, and preprocessing layer with a thickness of nanoscale, preferably 75
~90nm.Above-mentioned preprocessing layer 20 can be formed using acrylic resin, acrylic resin is preferably metering system
Acid -2- hydroxy methacrylate, dimethacrylate -1,6-HD ester, ethylene glycol diacrylate, diacrylate triethyleneglycol ester, two
Acrylic acid tripropylene glycol ester, diacrylate are to neopentyl glycol ester, trimethylolpropane trimethacrylate, trihydroxy methyl pentane front three
One of base acrylic vinegar, three acrylic vinegar of trimethylolpropane pentaerythrite or their compositions, using above-mentioned preferred
Material can further increase the flexibility and barrier property of encapsulating structure；Also, due to the fluctuating on 10 surface of flexible substrate layer and
Void size is smaller, usually nanoscale, therefore, by the thickness limit of preprocessing layer 20 in the micron-scale in the range of, Neng Goubao
Above-mentioned preprocessing layer 20 is demonstrate,proved with lesser thickness, thus can not only effectively the fluctuating on 10 surface of filling flexible substrate layer and
Gap, and can be improved preprocessing layer 20 to the adhesiveness of flexible substrate layer 10, also reduce the integral thickness of encapsulating material.
In a preferred embodiment, the method for forming above-mentioned preprocessing layer 20 is coating process, can specifically be adopted
Apply the monomer or oligomer of acrylic resin on the surface of flexible substrate layer 10 with coating methods such as roller coating or sprayings, it will
Monomer or polymer polymerizing, then using the routine techniques such as drying removal solvent to form above-mentioned preprocessing layer 20.
It completes after the step of forming preprocessing layer 20 on the first surface of flexible substrate layer 10, in preprocessing layer 20
Separate flexible substrate layer 10 surface on formed aqueous vapor separation layer 40.The main function of aqueous vapor separation layer 40 is to steam and oxygen
Gas is obstructed, and the function to external environmental barrier is played, and prevents external moisture and oxygen from generating damage to photovoltaic device.
The step of forming above-mentioned aqueous vapor separation layer 40 may include: to claim to deposit using physical vapour deposition (PVD) or chemical gaseous phase
Technique grows inorganic oxide on the surface far from the flexible substrate layer 10 of the preprocessing layer 20, obtains the steam
Barrier layer 40, the preferably described inorganic oxide are silica, titanium oxide or aluminium oxide, and depositing operation is preferably sputtering technology.
Selection inorganic oxide, which prepares aqueous vapor separation layer 40, can play good water vapor rejection effect.Above-mentioned sputtering technology it is preferable to use
Silicon target target, sputtering condition are preferred are as follows: argon gas, oxygen generate gas as plasma, and gas flow is argon gas 100scm, oxygen
Gas 50scm, electric power value DC2500W, 0.2Pa sputtering pressure.
Before the step of forming above-mentioned aqueous vapor separation layer 40, which can also be included in preprocessing layer 20 and water
The step of hardening coat 30 are arranged between vapor barrier coatings 40, the structure of formation is as shown in Figure 3.The effect of above-mentioned hardening coat 30 removes
Make outside flexible substrate layer surface planarisation as above-mentioned preprocessing layer 20, moreover it is possible to ensure to improve the heat-resisting quantity of encapsulating structure
Can, enhance the surface hardness and mechanical strength of encapsulating structure.The material for forming above-mentioned hardening coat 30 can be applied selected from polyurethane
One of material, inorganic nano ceramic coating and radiation curable coating are a variety of.In a preferred embodiment, directly will
Polyurethane coating, inorganic nano ceramic coating or radiation curable coating be coated in preprocessing layer 20 surface on and solidified with
Form above-mentioned hardening coat 30；In another preferred embodiment, before the monomer solution coating of polyurethane coating being
It on the surface of process layer 20, and is crosslinked by being exposed to visible light, ultraviolet light and/or electron beam irradiation, is finally consolidated
Change in preprocessing layer 20 formed hardening coat 30, coating method be can be roller coating (such as intaglio plate roller coating), spraying, drench curtain
Formula coating, die coating etc..
After the step of forming above-mentioned aqueous vapor separation layer 40, which further includes in the separate of aqueous vapor separation layer 40
The step of fluoride layer 50 are formed on the surface of preprocessing layer 20.The above-mentioned fluoride layer 50 formed can be used as weathering layer, come
Improve the ageing-resistant performance in the open air of the encapsulating structure.Preferably, above-mentioned fluoride layer 50 is formed in the remote of aqueous vapor separation layer 40
On surface from preprocessing layer 20, forming fluoride layer 50 at this time can play a protective role to aqueous vapor separation layer 40, make steam
Barrier layer 40 is not direct to be contacted with extraneous, avoids aqueous vapor separation layer 40 due to failing caused by breakage.
In a preferred embodiment, in the coating of the surface of the separate preprocessing layer 20 of aqueous vapor separation layer 40 containing fluorination
The material of object, to form fluoride layer 50, the encapsulating structure of formation is as shown in Figure 4.Above-mentioned coating process may include: will be fluorine-containing
Resin solution and the mixing of isocyanide ester class curing agent are formulated for the fluororesin-coated liquid of fluororesin layer, and are existed using coating machine
It is coated with required thickness on aqueous vapor separation layer 40, the coating fluid on aqueous vapor separation layer 40 will be coated on therewith and carry out high temperature drying, from
And obtain above-mentioned fluoride layer 50.The material of above-mentioned fluoride is preferably tetrafluoroethene and/or vinylidene.
In another preferred embodiment, the process for forming above-mentioned fluoride layer 50 includes: in aqueous vapor separation layer 40
Far from the preprocessing layer 20 surface on be arranged adhesive layer 60；Fluoride films are set on the surface of adhesive layer 60, shape
At encapsulating structure it is as shown in Figure 5.Above-mentioned fluoride films are preferably selected from ethylene-tetrafluoroethylene copolymer, fluorinated ethylene propylene
One of copolymer, ethylene chlorotrifluoroethylene and Kynoar are a variety of, and the material for forming adhesive layer 60 is preferred
For acrylic resin, polyurethane or epoxy resin.Above-mentioned fluoride films are ageing-resistant, and self-cleaning timeliness is applied than fluororesin
Cloth liquid is longer.
In above-mentioned preferred embodiment, it is further preferable that the technique for forming adhesive layer 60 includes: by flash distillation or gas
It is mutually deposited on and forms one layer of monomer or oligomer for being capable of forming the material of adhesive layer 60 on aqueous vapor separation layer 40, then using electricity
Beamlet device, UV light source or electric discharge device are monomer crosslinked to form polymer to make, to obtain above-mentioned adhesive layer 60；In formation
The technique for stating fluoride layer 50 includes: fluoride films to be applied on adhesive layer 60 using lamination process, and be coated with bonding
The aqueous vapor separation layer 40 and fluoride films of layer 60 are loaded into same roll-to-roll laminator, by rubber to steel niproll system
Make two film contacts, the tension of each film is controlled using spring-loaded brake, so that gained laminates are flat, to obtain
State fluoride layer 50.
The thickness for forming above layers can be set according to actual needs, soft with a thickness of 25~100 μm when being formed
When property substrate layer 10, the thickness of preprocessing layer 20 is preferably 75~90nm, and the thickness of hardening coat 30 is preferably 3~5 μm, steam
The thickness of barrier layer 40 is preferably 9~90nm, and the thickness of fluoride layer 50 is preferably 50 μm, and the thickness of adhesive layer 60 is preferably 30
~70 μm.Above-mentioned thickness can make each layer while not influencing the flexibility of encapsulating structure, additionally it is possible to effectively play respective
Effect.
According to another aspect of the present invention, a kind of encapsulating structure is provided, such as Fig. 2 to 5, comprising: flexible substrate layer 10；Before
Process layer 20 is set on the first surface of flexible substrate layer 10, for filling recess and the gap of first surface；Water vapor rejection
Layer 40, is set to the side of the separate flexible substrate layer 10 of preprocessing layer 20.
Above-mentioned encapsulating structure of the invention is due to including flexible substrate layer 10 and aqueous vapor separation layer 40, to make encapsulating material
Can also have flexibility while can have barrier steam performance；Simultaneously as the encapsulating structure further includes being covered in
Preprocessing layer 20 on one side surface of flexible substrate layer 10, above-mentioned preprocessing layer 20 are capable of 10 surface of filling flexible substrate layer
Recess and gap, make the smooth surface of flexible substrate layer 10, to improve the surface smoothness of entire encapsulating structure.
In a preferred embodiment, encapsulating structure is by the flexible substrate layer 10, preprocessing layer 20, hard that is sequentially laminated
Change coating 30, aqueous vapor separation layer 40 and fluoride layer 50 to form, structure is as shown in Figure 4；In another preferred embodiment
In, encapsulating structure is by the flexible substrate layer 10, preprocessing layer 20, hardening coat 30, aqueous vapor separation layer 40, adhesive layer that are sequentially laminated
60 and fluoride layer 50 form, structure is as shown in Figure 5.Above-mentioned flexible substrate layer 10 makes encapsulating structure have flexibility, preceding place
Reason layer 20 makes the smooth surface of flexible substrate layer 10, hardening coat 30 make encapsulating structure high temperature resistance with higher,
Surface hardness and mechanical strength, aqueous vapor separation layer 40 is for obstructing vapor and oxygen, above-mentioned 40 fluoride layer of aqueous vapor separation layer
50 make encapsulating structure have outdoor ageing-resistant performance, to make have the film solar cell of above structure with higher soft
Soft and reliability.
According to a further aspect of the invention, a kind of thin-film solar cells including above-mentioned encapsulating structure is provided.By
In above-mentioned encapsulating structure include flexible substrate layer and aqueous vapor separation layer, to make encapsulating material that can have barrier steam performance
While can also have flexibility, and then not only avoid caused by thin-film solar cells entered due to steam or oxygen
Damage, improves the reliability of thin-film solar cells, and also ensure the flexibility of thin-film solar cells；Meanwhile by
In the preprocessing layer that the encapsulating structure further includes on the side surface for being covered in flexible substrate layer, above-mentioned preprocessing layer can be filled
Flexible substrate layer depression in the surface and gap, make the smooth surface of flexible substrate layer, to optimize aqueous vapor separation layer
Performance makes above-mentioned thin-film solar cells more resistant to aging and has better flexibility.In addition, above-mentioned thin-film solar cells can
To be adapted to have the object of the wall surface of arch, parabolic shape, it is possible thereby to be set to dome-shaped building, highway every
Sound wall etc..
In accordance with a further aspect of the present invention, a kind of organic light-emitting display device including above-mentioned encapsulating structure is additionally provided.
Since above-mentioned encapsulating structure includes flexible substrate layer and aqueous vapor separation layer, to make encapsulating material that can have barrier steam
Can also have flexibility while energy, and then not only avoid organic light-emitting display device and led due to steam or oxygen entrance
The damage of cause, improves the reliability of organic light-emitting display device, and also ensures the flexibility of organic light-emitting display device；
Simultaneously as the encapsulating structure further includes the preprocessing layer for being set to a side surface of flexible substrate layer, above-mentioned preprocessing layer energy
Enough filling flexible substrate layer depressions in the surface and gap, make the smooth surface of flexible substrate layer, to optimize steam resistance
The performance of interlayer makes it more resistant to aging and has better flexibility, and therefore, above-mentioned organic light-emitting display device can have more
Long service life, and it is more able to satisfy the requirement of more Flexible Displays, there is better flexible application value.
The production method for further illustrating encapsulating structure provided by the present application below in conjunction with embodiment and comparative example.
Embodiment 1
The production method of encapsulating structure provided in this embodiment the following steps are included:
Making material be PET flexible substrate layer, flexible substrate layer with a thickness of 50 μm；
The monomer for applying ethylene glycol diacrylate in the first surface of flexible substrate layer using roller coating, then passes through drying
Removal solvent to form preprocessing layer, preprocessing layer with a thickness of 80nm；
By evaporation technology preprocessing layer surface forming material be silica aqueous vapor separation layer, aqueous vapor separation layer
With a thickness of 50nm.
Embodiment 2
The production method of encapsulating structure provided in this embodiment the following steps are included:
Making material be PET flexible substrate layer, flexible substrate layer with a thickness of 50 μm；
The monomer for applying ethylene glycol diacrylate in the first surface of flexible substrate layer using roller coating, then passes through drying
Removal solvent to form preprocessing layer, preprocessing layer with a thickness of 80nm；
It uses roller coating that inorganic nano ceramic coating is coated in the surface of preprocessing layer and solidifies to form hardening and apply
Layer, hardening coat with a thickness of 4 μm；
By evaporation technology preprocessing layer surface forming material be silica aqueous vapor separation layer, aqueous vapor separation layer
With a thickness of 50nm.
Embodiment 3
The production method of encapsulating structure provided in this embodiment the following steps are included:
Making material be PET flexible substrate layer, flexible substrate layer with a thickness of 50 μm；
Using roller coating in the monomer of the first surface coating ethylene glycol diacrylate of flexible substrate layer, then pass through drying
Removal solvent to form preprocessing layer, preprocessing layer with a thickness of 80nm；
It uses roller coating that inorganic nano ceramic coating is coated in the surface of preprocessing layer and solidifies to form hardening and apply
Layer, hardening coat with a thickness of 4 μm；
By evaporation technology hardening coat surface forming material be silica aqueous vapor separation layer, aqueous vapor separation layer
With a thickness of 50nm；
By containing tetrafluoroethene solution and isocyanide ester class curing agent mix, be formulated for the fluororesin-coated of fluororesin layer
Liquid, and required thickness is coated on aqueous vapor separation layer using coating machine, will be coated on therewith the coating fluid on aqueous vapor separation layer into
Row high temperature drying, to obtain the fluoride layer with a thickness of 50 μm.
Embodiment 4
The production method of encapsulating structure provided in this embodiment the following steps are included:
Making material be PET flexible substrate layer, flexible substrate layer with a thickness of 50 μm；
Using roller coating in the monomer of the first surface coating ethylene glycol diacrylate of flexible substrate layer, then pass through drying
Removal solvent to form preprocessing layer, preprocessing layer with a thickness of 80nm；
It uses roller coating that inorganic nano ceramic coating is coated in the surface of preprocessing layer and solidifies to form hardening and apply
Layer, hardening coat with a thickness of 4 μm；
By evaporation technology hardening coat surface forming material be silica aqueous vapor separation layer, aqueous vapor separation layer
With a thickness of 50nm；
The monomer for coating a strata urethane on aqueous vapor separation layer by flash process, then makes list using electron beam device
Body is crosslinked to form polymer, to obtain adhesive layer；Use lamination process by material for the fluorination of ethylene-tetrafluoroethylene copolymer
Object film is applied on adhesive layer: the aqueous vapor separation layer and fluoride films for being coated with adhesive layer, which are loaded into laminator, makes two films
Contact, to obtain the fluoride layer with a thickness of 50 μm.
Comparative example 1
This comparative example provide encapsulating structure production method the following steps are included:
Making material be PET flexible substrate layer, flexible substrate layer with a thickness of 50 μm；
By evaporation technology hardening coat surface forming material be silica aqueous vapor separation layer, aqueous vapor separation layer
With a thickness of 50nm.
Comparative example 2
This comparative example provide encapsulating structure production method the following steps are included:
Making material be PET flexible substrate layer, flexible substrate layer with a thickness of 50 μm；
It uses roller coating that inorganic nano ceramic coating is coated in the surface of flexible substrate layer and solidifies to form hardening
Coating, hardening coat with a thickness of 4 μm；
By evaporation technology hardening coat surface forming material be silica aqueous vapor separation layer, aqueous vapor separation layer
With a thickness of 50nm；
By containing tetrafluoroethene solution and isocyanide ester class curing agent mix, be formulated for the fluororesin-coated of fluororesin layer
Liquid, and required thickness is coated on aqueous vapor separation layer using coating machine, will be coated on therewith the coating fluid on aqueous vapor separation layer into
Row high temperature drying, to obtain the fluoride layer with a thickness of 50 μm.
The moisture permeability of encapsulating structure in embodiment 1 to 4 and comparative example 1,2 is tested, test method is
Mocon method, test condition: 37.8 DEG C of temperature, relative humidity 100%, test result is as follows shown in table:
| Example | WVTR(g/m2/d) |
| Embodiment 1 | 7.23×10-3 |
| Embodiment 2 | 1.12×10-3 |
| Embodiment 3 | 8.03×10-4 |
| Embodiment 4 | 4.12×10-4 |
| Comparative example 1 | 7.84×10-3 |
| Comparative example 2 | 5.52×10-3 |
The water vapor transmittance that can be seen that the encapsulating structure prepared in embodiment 1 to 4 from above-mentioned test result is below pair
The water vapor transmittance of the encapsulating structure prepared in ratio 1, it is seen that be provided with preprocessing layer in encapsulating structure, also can be improved envelope
The water vapor barrier property of assembling structure；Also, the water vapor transmittance of the encapsulating structure prepared in embodiment 2 and 4 is below in comparative example 2
The water vapor transmittance of the encapsulating structure of preparation, it is seen then that compared to only hardening coat is formed in flexible parent metal layer surface, formed firmly
The water vapor barrier property that preprocessing layer can further increase the encapsulating structure of preparation is initially formed before changing coating.
It can be seen from the above description that the above embodiments of the present invention realized the following chievements:
1, the production method is by being made flexible substrate layer, and aqueous vapor separation layer is formed in the side table of flexible substrate layer
On face, to make encapsulating material that can also have flexibility while can have barrier steam performance；
2, the production method further include the steps that on the surface of flexible substrate layer formed preprocessing layer, formation it is above-mentioned before
Process layer is capable of fluctuating and the gap of filling flexible substrate layer surface, makes the smooth surface of flexible substrate layer, to improve
The surface smoothness of entire encapsulating structure；
3, the production method further includes the steps that forming hardening coat on the surface of preprocessing layer, and above-mentioned hardening coat is not
It can only make outside flexible substrate layer surface planarisation, moreover it is possible to ensure to improve the high temperature resistance of encapsulating structure, enhance encapsulating structure
Surface hardness and mechanical strength；
4, the production method further include the steps that on the surface of aqueous vapor separation layer formed fluoride layer, as weathering layer with
Improve the ageing-resistant performance in the open air of the encapsulating structure；
5, when by thin-film solar cells is formed using the encapsulating structure of above-mentioned production method production, film is not only avoided
Solar battery improves the reliability of thin-film solar cells, Er Qiebao due to damaging caused by steam or oxygen entrance
The flexibility for having demonstrate,proved thin-film solar cells, also enables encapsulating structure to be more securely arranged on cell matrix, improves
The adhesive force of encapsulating structure in thin-film solar cells；
6, above-mentioned thin-film solar cells is adapted to the object with the wall surface of arch, parabolic shape, it is possible thereby to
It is set to the sound-proof wall etc. of dome-shaped building, highway；
7, when the encapsulating structure of above method production being formed organic light-emitting display device, it is aobvious to not only avoid organic light emission
Showing device improves the reliability of organic light-emitting display device, Er Qieti due to damaging caused by steam or oxygen entrance
The high flexible application value of organic light-emitting display device.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (15)
1. a kind of production method of encapsulating structure, which comprises the following steps:
Make flexible substrate layer；
Preprocessing layer is formed on the first surface of the flexible substrate layer, for filling the recess and sky of the first surface
Gap；
Aqueous vapor separation layer is formed by deposition on the surface far from the flexible substrate layer of the preprocessing layer,
The step of forming the aqueous vapor separation layer include:
Using physical vapour deposition (PVD) or chemical vapor deposition process in the preprocessing layer far from the flexible substrate layer
Inorganic oxide is grown on surface, obtains the aqueous vapor separation layer.
2. manufacturing method according to claim 1, which is characterized in that it is described production flexible substrate layer process include:
Discharge treatment, flame pretreatment or chemical pretreatment are carried out to the surface of transparent polymer layer, being formed has bonding surface
The flexible substrate layer.
3. manufacturing method according to claim 1, which is characterized in that the step of forming the preprocessing layer include:
The solution of acrylic resin is coated on the first surface of the flexible substrate layer；
The solvent of the solution is removed to form the preprocessing layer, and the preprocessing layer with a thickness of nanoscale.
4. production method according to claim 3, which is characterized in that the preprocessing layer with a thickness of 75 ~ 90nm.
5. manufacturing method according to claim 1, which is characterized in that the inorganic oxide be silica, titanium oxide or
Person's aluminium oxide.
6. manufacturing method according to claim 1, which is characterized in that before the step of forming the aqueous vapor separation layer,
The production method further includes the steps that forming hardening coat between the preprocessing layer and the aqueous vapor separation layer.
7. production method according to claim 6, which is characterized in that the step of forming the hardening coat include:
Cured coating is coated on the surface far from the flexible substrate layer of the preprocessing layer, the cured coating is poly- ammonia
Ester paint, inorganic nano ceramic coating and radiation curable coating are any one or more of；
The cured coating is solidified, the hardening coat is formed.
8. manufacturing method according to claim 1, which is characterized in that after the step of forming the aqueous vapor separation layer,
The production method further includes that the step of fluoride layer is formed on the surface far from the preprocessing layer of the aqueous vapor separation layer
Suddenly.
9. production method according to claim 8, which is characterized in that the step of forming the fluoride layer include:
In the material of the surface coating fluoride far from the preprocessing layer of the aqueous vapor separation layer, the fluoride is formed
Layer.
10. manufacturing method according to claim 9, which is characterized in that the material of the fluoride be tetrafluoroethene and/
Or vinylidene.
11. production method according to claim 8, which is characterized in that the process for forming the fluoride layer includes:
Adhesive layer is set on the surface far from the preprocessing layer of the aqueous vapor separation layer；
Fluoride films are set on the surface of the adhesive layer.
12. production method according to claim 11, which is characterized in that the fluoride films are total for ethylene-tetrafluoroethylene
Polymers film, fluorinated ethylene propylene copolymer film, ethylene chlorotrifluoroethylene film or polyvinylidene fluoride film.
13. a kind of encapsulating structure, which is characterized in that encapsulating structure production as described in any one of claims 1 to 11
Method is made.
14. a kind of thin-film solar cells, including encapsulating structure, which is characterized in that the encapsulating structure is claim 13 institute
The encapsulating structure stated.
15. a kind of organic light-emitting display device, including encapsulating structure, which is characterized in that the encapsulating structure is claim 13
The encapsulating structure.
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| CN108735841A (en) * | 2018-05-25 | 2018-11-02 | 北京汉能光伏投资有限公司 | A kind of solar cell package plate and preparation method thereof, solar cell |
| CN110969939A (en) * | 2018-09-28 | 2020-04-07 | 上海和辉光电有限公司 | Foldable display screen and display device |
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