CN106992225A - 一种自带光源的光伏电池 - Google Patents

一种自带光源的光伏电池 Download PDF

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CN106992225A
CN106992225A CN201710350951.5A CN201710350951A CN106992225A CN 106992225 A CN106992225 A CN 106992225A CN 201710350951 A CN201710350951 A CN 201710350951A CN 106992225 A CN106992225 A CN 106992225A
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陈继革
杨晓军
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Chengdu Yangpai Technology Co ltd
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Abstract

本发明公开了一种自带光源的光伏电池，其包括：密封壳体(1)，其中填充有弥散性β放射源(2)；位于密封壳体内的以同心圆方式间隔排列的一系列光伏半导体薄膜(3)，膜间空隙中填充有荧光粉(4)。本发明的自带光源的光伏电池可在没有外界光照的条件下工作，且电池体积紧凑，对外输出电流可达数十微安，能够满足一般的微机电系统的供电要求。

Description

一种自带光源的光伏电池
技术领域
本发明属于光伏电池领域，具体涉及一种自带光源的光伏电池。
背景技术
传统的光伏电池通过光伏效应将光能转化为电能，但其必须在外界光源的照射下才能工作，这限制了光伏电池的应用范围，因为在夜晚或一些密闭场合下是无法被外界光源照射到的。另外，传统光伏电池并不适合于在微机电系统(MEMS)中使用，因为在微机电系统例如微型管道机器人、植入式微系统、无线传感器、人工心脏起搏器、便携式移动电子产品领域、太空或深海无人探测器等微型仪器设备中，一般要求电源微型化，但传统光伏电池为了充分扩大其受光面积，其光伏组件一般做得面积很大，且半导体层为刚性的无法卷曲，故传统光伏电池无法直接用于上述微机电系统中。
已经有人提出了荧光同位素电池的概念来解决上述问题，其为三层堆叠式器件，第一层为同位素金属层，其能通过β衰变而发射出β粒子，例如63Ni，其发出的β射线的平均能量为17.42KeV；147Pm，其发出的β射线的平均能量为61.93KeV；137Ce，其发出的β射线的平均能量为187.1KeV；90Sr，其发出的β射线的平均能量为195.8KeV，上述这些同位素金属通常用气相沉积法或溅射法沉积在同种的非放射性金属层上，例如63Ni以数十微米的厚度沉积在普通镍片上；第二层膜为荧光材料层，其能在上述同位素层发射出的β粒子的照射下而发出荧光；第三层为光伏半导体层，其通常为多晶硅层、单晶硅层、碳化硅、氮化镓等半导体层，用于将荧光转化为电能。但这样的荧光同位素电池在实践中遇到很多问题：主要问题是单位面积产生的电流非常微弱，例如为1-4nA/cm2，如此微弱的电流几乎没有工业实用性，理论上讲虽然可以通过扩大电池面积来提高总对外输出电流，但由于至少其中的同位素金属层和光伏半导体层是刚性层，无法以卷曲的方式来扩大面积，故面积扩大势必导致该荧光同位素电池体积过大，无法满足微型化的设计目标。
本发明旨在解决上述所有问题。
发明内容
本发明提供了一种自带光源的光伏电池，其包括：
密封壳体1，其中填充有弥散性β放射源2；
位于密封壳体内的以同心圆方式间隔排列的一系列光伏半导体薄膜3，膜间空隙中填充有荧光粉4。
本发明中“薄膜”与“膜”是同义词，均是指其长和宽远远大于其厚度(例如长度或宽度是厚度的至少100倍以上)的层状物。
优选地，所述荧光粉为ZnS:Cu荧光粉、Y2O2S:Eu荧光粉、稀土荧光粉或卤磷酸钙荧光粉。上述荧光粉的组成表示方法是A:B是本领域通常表示方法，表示在A的晶体中掺杂了少量的B原子。以ZnS:Cu为例，其表示在ZnS晶体中掺杂了少量的Cu，即用一部分Cu原子取代了ZnS晶体中的Zn原子，所掺杂的原子通常作为激活剂来提高荧光产生效率。
优选地，所述弥散性β放射源2是氚气或63Ni粉体。之所以称之为“弥散性”β放射源是因为它们能够自由流动式地弥散或弥漫在该密闭壳体中的任何一处，无处不在，无处不有。
优选地，所述光伏半导体薄膜为砷化镓半导体薄膜、碲化镉半导体薄膜、锑化镉半导体薄膜、单晶硅半导体薄膜、非晶硅半导体薄膜、CuInSe2半导体薄膜、色素敏化染料半导体薄膜或铜铟硒化物半导体薄膜。
优选地，所述砷化镓半导体薄膜为砷化镓单结半导体薄膜、双结半导体薄膜或三结半导体薄膜。
优选地，所述光伏半导体薄膜3为柔性薄膜，其厚度为5-10微米。
优选地，呈同心圆方式设置的各圈光伏半导体薄膜(3)之间的间距彼此独立地为0.003-0.03mm。
优选地，所述一系列光伏半导体薄膜3之间被导线连接以形成并联或串联的连接方式。
本发明的有益效果：
1、本发明利用弥散性β放射源例如氚气或63Ni粉末放射出的β粒子照射荧光粉，产生荧光，进而用该荧光去照射光伏半导体薄膜去实现光能向电脑的转换。这相当于在光伏电池中自备了光源，因此完全消除了对外界光源的依赖，故本发明的自带光源的光伏电池可以在夜晚使用也能在密闭场合下使用。
2、本发明的自带光源的光伏电池能够很容易地微型化。因为本发明中将β射线源由刚性的同位素金属层改变为弥散性放射源氚气或63Ni粉末，且将传统的连续的荧光材料层改变成离散的荧光粉，并选用柔性的光伏半导体薄膜，气体和粉体都不影响其卷曲，而柔性半导体膜又很容易卷曲，故与普通薄膜式光伏电池或传统的三层堆叠式荧光核电池中原本需要展开设置的很大面积的刚性半导体层不同，本发明可以将柔性半导体薄膜以同心圆方式多圈密集设置以便以高度体积紧凑的方式放到很小的密闭壳体中，实现了微型化。
3、传统的三层堆叠式荧光核电池虽然也可以算作是自带光源的光伏电池，但其荧光产生效率十分低下。首先，其使用荧光材料层，这导致很大一部分荧光材料的表面用来与相邻荧光材料成层，而不能受到β射线的照射。其次，因为荧光材料层只有直接面向同位素金属层的那一面才能被β粒子照射而产生荧光，而面向光伏半导体层的那一面(即背离同位素金属层的那一面)并不能受到β粒子照射，因此，至少有一半的荧光材料层的外表面积被浪费了。同理，荧光材料层产生的全部荧光中，也只有射向光伏半导体的那一半荧光被用来产生电能，而射向同位素金属层那另一半荧光则被浪费掉了。如上所述的多重效率损失使得传统的三层堆叠式荧光核电池由β粒子向电能的总转换效率十分低下，体现在单位面积产生的电流非常微弱，例如为1-4nA/cm2，如此微弱的电流几乎没有工业实用性。而本发明则通过巧妙的结构设计大大提高了转换效率：本发明中将光伏半导体薄膜设置成有一定间隔的同心圆方式，并在这些薄膜之间的空隙中填充荧光粉，而本发明中的密闭壳体中是充满弥散性β放射源例如氚气或63Ni粉末的，因β放射源的弥散性，其完全能够存在于各荧光粉颗粒之间的间隙处，故氚气或63Ni粉末发生衰变所产生的β粒子是在该密闭壳体中是无处不在的，因此，所有的荧光粉的所有外表面都能收到这些β粒子的辐射产生荧光，即100％的荧光粉外表面积都得到了利用，没有任何浪费的荧光粉外表面积。而荧光粉又填充在呈同心圆设置的一系列光伏半导体薄膜之间，其发射的荧光也几乎100％都照射到光伏半导体薄膜上得到利用，几乎没有荧光损失。因此，本发明的自带光源的光伏电池在荧光产生效率和荧光利用效率上，都比传统的三层堆叠式荧光核电池大大提高。再加上本发明中由于柔性的光伏半导体膜呈同心圆设置，能够在有限的密闭壳体体积内以很高的体积效率去设置大表面积的光伏半导体膜，既使得成品电池结构紧凑，总体积很小，又有效放大了工作面积，使得总对外输出电流可达几十微安级别，已经具备了为微机电器件供电的工业实用性。
附图说明
图1是本发明的自带光源的光伏电池的结构示意图；其中各附图标记含义如下：
1、密闭壳体；2、弥散性β放射源；3、光伏半导体薄膜；4、荧光粉。
具体实施方式
下面通过实施例对本发明的内容作进一步的说明，但并不因此而限制本发明。
实施例1
结构如图1所示。密闭壳体为直径为10mm、高度为10mm的密闭玻璃管，其中容纳有呈同心圆方式设置的厚度为0.005mm的一系列光伏半导体薄膜，各薄膜之间的间隙为0.003-0.03mm，间隙中填充有粒径为2μm左右的ZnS:Cu荧光粉颗粒，密闭玻璃管的其余空间被氚气或63Ni粉末所充满。各光伏半导体薄膜之间通过导线(未示出)以并联或串联方式连接，并最终将金属导线在不破坏所述密闭玻璃管的前提下被引出来作为正极和负极。该自带光源的光伏电池整体对外输出电流可达10-30μA，能够满足一般的MEMS器件的电流要求。
以上实施例描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，而不是以任何方式限制本发明的范围，在不脱离本发明范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的范围内。

Claims (8)

1.一种自带光源的光伏电池，其特征在于，其包括：
密封壳体(1)，其中填充有弥散性β放射源(2)；
位于密封壳体内的以同心圆方式间隔排列的一系列光伏半导体薄膜(3)，膜间空隙中填充有荧光粉(4)。
2.根据权利要求1所述的自带光源的光伏电池，其特征在于，所述荧光粉为ZnS:Cu荧光粉、Y2O2S:Eu荧光粉、稀土荧光粉或卤磷酸钙荧光粉。
3.根据权利要求1所述的自带光源的光伏电池，其特征在于，所述弥散性β放射源(2)是氚气或63Ni粉体。
4.根据权利要求1所述的自带光源的光伏电池，其特征在于，所述光伏半导体薄膜为砷化镓半导体薄膜、碲化镉半导体薄膜、锑化镉半导体薄膜、单晶硅半导体薄膜、非晶硅半导体薄膜、CuInSe2半导体薄膜、色素敏化染料半导体薄膜或铜铟硒化物半导体薄膜。
5.根据权利要求4所述的自带光源的光伏电池，其特征在于，所述砷化镓半导体薄膜为砷化镓单结半导体薄膜、双结半导体薄膜或三结半导体薄膜。
6.根据权利要求1所述的自带光源的光伏电池，其特征在于，其中所述光伏半导体薄膜(3)为柔性薄膜，其厚度为5-10微米。
7.根据权利要求1所述的自带光源的光伏电池，其特征在于，其中呈同心圆方式设置的各圈光伏半导体薄膜(3)之间的间距彼此独立地为0.003-0.03mm。
8.根据权利要求1所述的自带光源的光伏电池，其特征在于，其中所述一系列光伏半导体薄膜(3)之间被导线连接以形成并联或串联的连接方式。
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