CN106992195A - Light-emitting diode assembly and its manufacture method - Google Patents
Light-emitting diode assembly and its manufacture method Download PDFInfo
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- CN106992195A CN106992195A CN201610030848.8A CN201610030848A CN106992195A CN 106992195 A CN106992195 A CN 106992195A CN 201610030848 A CN201610030848 A CN 201610030848A CN 106992195 A CN106992195 A CN 106992195A
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- emitting diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
Abstract
The present invention discloses a kind of light-emitting diode assembly and its manufacture method.One light-emitting diode assembly includes a substrate；Semiconductor lights lamination, on substrate；One electrode, on semiconductor light emitting lamination, is used as the purposes externally electrically engaged；One protective layer, cover electrode upper surface, wherein protective layer have heat produce cracking characteristic and/or in externally electrically engagement when can be breakdown characteristic.
Description
Technical field
It is more particularly to a kind of that there are light-emitting diodes the present invention relates to a kind of light-emitting device and its manufacture method
The light-emitting device and its manufacture method of pipe.
Background technology
Light emitting diode (light emitting diode, LED) due to luminous efficiency is high, long lifespan with
And the advantages of low power consumption, gradually replaced conventional tungsten bulb, halogen bulb or fluorescent tube in recent years and turned into
The light source of main flow, light emitting diode is also widely used for the colored display of big screen, automotive lighting, traffic
The fields such as signal, multimedia display and optical communication.However, the electrode of light emitting diode can be in manufacturing process
Or can be with air contact easily by the pollution such as particle or dirty attachment, follow-up during transporting
The process of electric wire connection electrode cause resistance rise or sticky limit it is not good, it is easy to fall off the shortcomings of.Therefore need
A new process for making is wanted to improve above-mentioned phenomenon.
The content of the invention
The present invention includes a kind of light-emitting diode assembly, including a substrate；Semiconductor lights lamination, position
In on substrate；One electrode, on semiconductor light emitting lamination, is used as the purposes externally electrically engaged；With
And a protective layer, cover the upper surface of electrode, wherein protective layer have heat produce cracking characteristic or/
And in externally electrically engagement when can be breakdown characteristic.
Lighted present invention additionally comprises a kind of manufacture method of light-emitting diode assembly, including formation semiconductor
It is stacked on a substrate；An electrode is formed on semiconductor light emitting lamination, the use externally electrically engaged is used as
On the way；And form a protective layer and cover the upper surface of electrode, there is wherein protective layer heat to produce cracking
Characteristic and/or in externally electrically engagement when can be breakdown characteristic.
Brief description of the drawings
Figure 1A is the diagrammatic cross-section of the light-emitting diode assembly of an embodiment；
Figure 1B is the diagrammatic cross-section of the light-emitting diode assembly of another embodiment；
Fig. 1 C are the diagrammatic cross-section of the light-emitting diode assembly of another embodiment；
Fig. 1 D are the diagrammatic cross-section of the light-emitting diode assembly of another embodiment；
Fig. 2~Fig. 4 is the section of the intermediate fabrication processing step of the light-emitting diode assembly of some embodiments
Schematic diagram；
The schematic diagram that Fig. 5 tests for the thrust of the light emitting diode of an embodiment.
Symbol description
100 light-emitting diode assemblies
102 substrates
103rd, 103 ' semiconductor light emitting lamination
104 first semiconductor layers
106th, 106 ' luminescent layer
108th, 108 ' second semiconductor layer
110 second electrodes
112 first electrodes
114 electric current barrier layers
116th, 116 ' transparency conducting layer
117 patterning photoresist layers
118 protective layers
120 silicon dioxide layer of protection
Embodiment
Elaborated below for the semiconductor device of the present invention.It is to be understood that following narration is carried
For many different embodiments or example, the different patterns to implement the present invention.It is as described below specific
Element and arrangement mode are that the present invention is briefly described to the greatest extent.Certainly, these only to illustrate and non-invention
Limit.In addition, the label or sign of repetition may be used in different embodiments.These repeat only for
Simply clearly describe the present invention, do not represent discussed not between be the same as Example and/or structure have it is any
Relevance.Furthermore, when address a first material layer in the second material layer or on when, including the
The situation that one material layer is directly contacted with second material layer.Or, it is also possible to it is separated with one or more other
The situation of material layer, in this case, may be not directly contacted between first material layer and second material layer.
In addition, the term of relativity may be used in embodiment, such as " relatively low " or " bottom " and " compared with
It is high " or " top ", to describe relativeness of the element for another element of diagram.It is understood that
If making it turn upside down the device upset of diagram, describing the element in " relatively low " side
The element in " higher " side will be turned into.
Here, " about ", the term of " about " are generally represented within the 20% of a set-point or scope,
Within preferably 10%, and more preferably it is within 5%.Given quantity is quantity about herein, is implied that
In the case of no certain illustrated, " about ", the implication of " about " can be still implied.
Figure 1A is refer to, it illustrates the diagrammatic cross-section of light-emitting diode assembly 100.As shown in Figure 1A,
Light-emitting diode assembly 100 includes the luminous lamination 103 of semiconductor and is arranged on a substrate 102.Wherein
The semiconductor light emitting lamination 103 includes one first semiconductor layer 104, is arranged at the first semiconductor layer 104
On a luminescent layer 106, it exposes the first semiconductor layer 104 of part, and is arranged at luminescent layer
One second semiconductor layer 108 on 106.In certain embodiments, substrate 102 can be sapphire (sapphire)
Substrate, gallium phosphide (GaP), GaAs (GaAs), aluminum gallium arsenide (AlGaAs) or carborundum (SiC).
In general, the first semiconductor layer 104 has different conductivities from the second semiconductor layer 108,
In certain embodiments, the first semiconductor layer 104 is n-type semiconductor, and the second semiconductor layer 108
It is p-type semiconductor material.In certain embodiments, semi-conducting material includes aluminium nitride (AlN), nitridation
Gallium (GaN), indium nitride (InN), aluminium gallium nitride alloy (AlGaN), aluminum indium nitride (AlInN), InGaN
(InGaN), aluminum indium gallium nitride (AlInGaN), or combinations of the above.
Luminescent layer 106 may include the quantum well structure (Quantum well) of one or more layers quantum well layer.
Luminescent layer 106 can be lighted by applying voltage electronic with hole-recombination.The material of luminescent layer 106 can be wrapped
Include InGaN (InGaN), aluminum indium gallium nitride (AlGaInN), GaAs (GaAs), aluminum gallium arsenide
(AlGaAs), InGaP (InGaP), indium phosphide arsenic (InAsP), InGaAsP (InGaAs), or above-mentioned
Combination.
Figure 1A is continued referring to, a first electrode 112 is arranged at the second of semiconductor light emitting lamination 103
On semiconductor layer 108, and a second electrode 110 is arranged at the of the exposure of semiconductor light emitting lamination 103
In semi-conductor layer 104.In certain embodiments, the material of first electrode 112 and second electrode 110
Material includes chromium, platinum, titanium, aluminium, copper, nickel, gold or combinations of the above.First electrode 112 and second
Electrode 110 is used as the purposes electrically connected with external power source or electronic component.The engagement of electrical connection includes to beat
Line mode forms wire or with flip-chip bonded mode and external electrical connections.Due in manufacture craft process or
During transport, first electrode 112 and second electrode 110 can be with air contacts easily by particle
Or dirty attachment and pollute, and then influence light-emitting diode assembly 100 in the quality of follow-up encapsulation engagement and
Stability.Therefore, as shown in Figure 1A, the light-emitting diode assembly 100 of this exposure includes a protective layer
118, it is arranged on second electrode 110 and first electrode 112, and substantially over second electrode
110 and the upper surface of first electrode 112.In certain embodiments, protective layer 118 is in second electrode
110 with the upper surface of first electrode 112 on gross area coverage rate at least about 90%, e.g., from about
95%~100%.In some embodiments, as shown in Figure 1B, protective layer 118 further extends to second electrode
110 with the side wall of first electrode 112 and the other parts bag of compliance covering semiconductor light emitting lamination 103
Containing the first semiconductor layer 104, the semiconductor layer 108 of luminescent layer 106 and second.In other embodiments,
Using etching or lifting off (lift-off) manufacture craft, protective layer 118 is set only to cover second electrode 110 and
The upper surface of one electrode 112, as shown in Figure 1A.
Protective layer 118 is an anti-soil protective layer, can protect the second electrode 110 and first electrode 112 under it
Not by particle or dirty pollution and prevent electrode metal formation oxidation.In the present embodiment, protective layer 118
Material may include that the material of thermal cracking, such as fluorine-based compound (e.g., polytetrafluoroethylene (PTFE)) can be carried out.
In other embodiment, protective layer 118 can also be nano-high molecule coating material (for example, epoxy resin or
Graphene oxide), nanometer iron-based material is (for example, titanium dioxide three-iron (Fe2O3)), nanometer nonferrous materials
(for example, nano silicate material) or photocatalyst stain resistant material are (for example, titanium dioxide (TiO2)).At some
In embodiment, protective layer 118 is higher than 60% in the transparency under visible ray.In some embodiments, protection
Layer 118 has drying characteristic, and its water contact angle is more than 90 °, is about higher than unprotected water contact angle
60°.The characteristic of its anti-soil, one be placed in tool organic pollutant environment under carry out appearance determination, no guarantor
The electrode outward appearance of sheath is in outside the contaminated outward appearance of black, the electrode for having protective layer 118 on electrode metal surface
Sight still maintains metal bright surface on electrode metal surface, with anti-soil oxidation-protective effect.In one embodiment,
The thickness of protective layer 118 is between 10 to 500 angstromsThis relatively thin thickness, therefore be not required to dispatch from foreign news agency
Property engagement before, for example routing engagement before carry out additional programs protective layer 118 is removed.In one embodiment,
Can be breakdown when routing is engaged, bonding wire is tightly engaged into electrode.In another embodiment, protect
Layer 118 includes thermal cracking material, first light-emitting diode assembly 100 can be heat-treated, for example, toasted
Light-emitting diode assembly 100, makes protective layer 118 carry out follow-up external electrical engagement after cracking again and makes
Technique, such as routing are engaged or flip-chip bonded, and the temperature of baking can be about 100 to 400 DEG C, e.g., from about
300 DEG C, the time is about 5 to 10 minutes.In another embodiment, engaged in protective layer 118 in routing
When it is breakdown after can carry out thermal cracking again or be heat-treated using the annealing temperature after engagement, weldering can be lifted
The sticky limit of line and electrode engagement.
As illustrated in figures 1A and ib, light-emitting diode assembly 100 may also include an electric current barrier layer 114
On the second semiconductor layer 108, and a transparency conducting layer 116 is located on the second semiconductor layer 108
And covering electric current barrier layer 114, wherein transparency conducting layer 116 are located at the second semiconductor layer 108 and first
Between electrode 112, and electric current barrier layer 114 position correspond to first electrode 112 position.Electric current
Barrier layer 114 may include insulating materials, such as silica (SiOx) or nitrogen oxide (SiNx), and electric current resistance
The position of barrier layer 114 corresponds to the position (as illustrated in figures 1A and ib) of first electrode 112, Ke Yirang
Electric current is evenly distributed to the region beyond first electrode 112, allows main light emitting to be distributed in first electrode
Region beyond 112, improves first electrode 112 with the light extraction efficiency of exterior domain.Transparency conducting layer 116
It is arranged between the second semiconductor layer 108 and first electrode 112, can dispersed current path.One
In a little embodiments, the material of transparency conducting layer 116 can be tin indium oxide, zinc oxide aluminum or indium zinc oxide
(Indium Zinc Oxide, IZO).
Fig. 1 C are refer to, in certain embodiments, material can be formed for silica (SiO2) protective layer
120 on the semiconductor light emitting lamination 103 and transparency conducting layer 116 shown in Figure 1A, and exposes
One electrode 112 and second electrode 110.In certain embodiments, can by chemical vapor deposition (CVD),
Plasma auxiliary chemical vapor deposition (PECVD), or other suitable deposition manufacture crafts, Yi Jihou
Continuous patterning manufacture craft forms above-mentioned silicon dioxide layer of protection 120.
Then, Fig. 1 D are refer to, in further embodiments, silicon dioxide layer of protection can be similarly formed
120 on the semiconductor light emitting lamination 103 and transparency conducting layer 116 shown in Figure 1B, and exposes
One electrode 112 and second electrode 110, and with the covering silica protection of the compliance of protective layer 118
Layer 120, first electrode 112 and second electrode 110.Silicon dioxide layer of protection 120 can be provided and partly led
Body lights the electrically isolating of lamination 103 and other devices, and avoid semiconductor light emitting lamination 103 by
Infringement from external environment condition.The material of silicon dioxide layer of protection 120 is not limited with silica,
Can be aluminum oxide (AlxOy) or silicon nitride (SiNx) etc. material substituted.
The section that Fig. 2~Fig. 4 illustrates the intermediate fabrication processing step of above-mentioned light-emitting diode assembly 100 shows
It is intended to.It refer to Fig. 2, form semiconductor and light lamination 103 ' on a substrate 102, the semiconductor
Luminous lamination 103 ' is comprising one first semiconductor layer 104, a luminescent layer 106 ' in the first semiconductor layer 104
On, and one second semiconductor layer 108 ' is on luminescent layer 106 '.In certain embodiments, using organic
Metallochemistry vapour deposition process (metal organic chemical-vapor deposition, MOCVD), liquid
Phase epitaxy method (Liquid Phase Epitaxy, LPE) or molecular beam epitaxy (Molecular Beam
Epitaxy, MBE) form the first semiconductor layer 104, luminescent layer 106 ' and the second semiconductor layer 108 '.
In certain embodiments, the first semiconductor layer 104 is n-type semiconductor, and the second semiconductor layer 108 '
It is p-type semiconductor material.
Then, an electric current barrier layer 114 is formed on the second semiconductor layer 108 '.In certain embodiments,
Made using electron beam evaporation plating (Electron Beam Evaporation) manufacture craft, sputter (Sputtering)
Make technique formation electric current barrier layer 114.A transparency conducting layer 116 ' is subsequently formed in the second semiconductor layer
On 108 ', and cover electric current barrier layer 114.In certain embodiments, sputter (Sputtering) can be used
Manufacture craft formation transparency conducting layer 116 '.Then, via photoetching (photolithography) manufacture craft,
Form one and pattern photoresist layer 117 on transparency conducting layer 116 ', as shown in Figure 2.
Fig. 3~Fig. 4 is refer to, photoresist layer 117 is will be patterned into as an etching mask layer, and
The partially transparent conductive layer 116 ' not covered by photoresist, second are removed via an etching process
Semiconductor layer 108 ' and luminescent layer 106 ', and form transparency conducting layer 116, the second semiconductor layer 108
And luminescent layer 106, to expose the first semiconductor layer 104 of part, then remove patterning photic
Resist layer 117.In certain embodiments, etching process can further etching part the first half
Conductor layer 104 (is not illustrated).
Then, Fig. 4 is refer to, a second electrode 110 is formed in the first semiconductor layer 104 exposed
On, and a first electrode 112 is formed on transparency conducting layer 116.In certain embodiments, can profit
With light lithographic fabrication process, etching process and deposition manufacture craft, formed second electrode 110 with
And first electrode 112.In this embodiment, transparency conducting layer 116 be located at the second semiconductor layer 108 with
Between first electrode 112, and electric current barrier layer 114 position correspond to first electrode 112 position.
Then, the deposition manufacture craft of protective layer 118 is carried out.In one embodiment, rotation can be used to apply
Cloth (Spin Coating) mode forms a protective layer 118, and covers second electrode 110 and first electrode
112 upper surface.First, the light-emitting diode assembly 100 shown in Fig. 4 is attached on a carrier,
And carrier is positioned in a bearing, wherein the bearing has a through hole, and through hole may be connected to a vacuum system
System or extract system.Then, bearing is vacuumized, carrier is closely attached with bearing.Then, rotate
Bearing, and simultaneously to spray a chemical agent on light-emitting diode assembly 100 positioned at bearing upper nozzle,
The chemical agent of the material comprising protective layer 118 is uniformly coated on luminous two in lasting rotary coating mode
On pole pipe device 100, make on light-emitting diode assembly 100 formed thin film (not illustrating), after
Room temperature or heat drying and form foregoing protective layer 118.In above-mentioned, rotation bearing can be controlled in speed
Spend for 1000 to 6000rpm, to form the protective layer 118 that thickness is about 10 to 500 angstroms.Via rotation
The protective layer 118 that painting mode is formed will cover second electrode 110, first electrode 112 and first
Semiconductor layer 104, the semiconductor layer 108 of luminescent layer 106 and second, as shown in Figure 1B.Afterwards, may be used
Light lithographic fabrication process and etching process are optionally carried out, partial protection layer is removed, is left behind
Protective layer 118 only covers the upper surface of second electrode 110 or first electrode 112, as shown in Figure 1A.
In another embodiment, immersion way can be used to carry out the deposition manufacture craft of protective layer 118, with
Form protective layer 118 and cover the upper surface of second electrode 110 and first electrode 112.First, will
Light-emitting diode assembly 100 as shown in Figure 4 is attached on a carrier, and by carrier with fixed rate
In the container for being soaked into the chemical agent equipped with the material comprising protective layer 118, stand after the time, then
Carrier is taken out with same fixed rate, makes the electricity of second electrode 110 and first on light emitting diode 100
Thin film (not illustrating) is formed on the upper surface of pole 112, make film drying after room temperature or heating and
Form foregoing protective layer 118.In above-mentioned, the time of immersion chemical agent is about 1 to 180 second,
To form the protective layer 118 that thickness is about 10 to 500 angstroms.The protective layer formed via immersion way
118 covering second electrode 110 and first electrode 112, semiconductor light emitting lamination 103 and transparent will lead
Electric layer 116, as shown in Figure 1B.Afterwards, it can optionally carry out light lithographic fabrication process and etching makes
Technique, partial protection layer is removed, and the protective layer 118 being left behind only covers second electrode 110 and first
The upper surface of electrode 112, as shown in Figure 1A.In another embodiment, one can be carry uncut
The chip of multiple light-emitting diode assemblies 100, direct rotary coating or soaks this and contains the material of protective layer 118
Chemical agent in wafer surface, according to abovementioned steps, (rotary coating or immersion manufacture craft are referred to
Related narration above, does not do repeat specification herein) diaphragm 118 is formed in multiple light-emitting diode assemblies
On 100.
In another embodiment, it is possible to use it is above-mentioned such as Figure 1A institutes to be formed to lift off (lift-off) manufacture craft
The only covering second electrode 110 and the protective layer 118 of the upper surface of first electrode 112 shown.Protected being formed
Before sheath 118, prior to depositing a sacrificial patterned (not illustrating) on light-emitting diode assembly 100, only
Expose second electrode 110 and first electrode 112.Afterwards using above-mentioned rotary coating or immersion way in
A film is formed on light-emitting diode assembly 100 (before wherein rotary coating or immersion manufacture craft are referred to
The related narration in face, does not do repeat specification herein), make film in room temperature or heat drying after room temperature
And form foregoing protective layer 118.Then selectivity removes sacrificial patterned and protective layer thereon,
The protective layer 118 being left behind only covers second electrode 110 and the protective layer of the upper surface of first electrode 112
118, as shown in Figure 1A.
In one embodiment, as shown in figure iD, can optionally be formed a silicon dioxide layer of protection 120 in
On light-emitting diode assembly 100 as shown in Figure 4.In certain embodiments, chemical vapor deposition can be passed through
Product (CVD), plasma auxiliary chemical vapor deposition (PECVD), or other suitable manufacture crafts are suitable
Deposit to answering property silicon dioxide layer of protection 120 in semiconductor light emitting lamination 103, transparency conducting layer 116,
In first electrode 112 and second electrode 110, and implement patterning system to silicon dioxide layer of protection 120
Make technique to expose first electrode 112 and second electrode 110.Then, conformally deposition protection
Layer 118 is in silicon dioxide layer of protection 120, first electrode 112 and second electrode 110, such as Fig. 1 D
It is shown.Afterwards, light lithographic fabrication process and etching process can be optionally carried out, by partial protection layer
Remove, the protective layer 118 being left behind only covers the upper surface of second electrode 110 or first electrode 112,
As shown in Figure 1 C.
In one embodiment, light-emitting diode assembly carries out thrust test with routing juncture.Luminous
After diode apparatus formation protective layer 118, engaged respectively with forming direct routing after protective layer 118, with
And carry out routing engagement two ways again after thermal cracking protective layer 118 is carried out, to bonding wire and interelectrode
Level of adhesion carries out thrust test, and thrust numerical value (force) is represented after routing, and bonding wire is pushed away into second electrode
Strength needed for the upper surface of 110/ first electrode 112, required strength is big represent bonding wire and electrode top it
Between level of adhesion it is higher.In one embodiment, protective layer 118 is being formed through routing thrust experiment test
It is about afterwards 43.05g directly with the thrust of routing mode and electrode engagement, and first by protective layer 118 through foregoing
About 300 DEG C of thermal crackings of high-temperature baking after carry out the thrust of routing again and can be promoted to 55.50g.By above-mentioned survey
Test result understands that carrying out routing engagement again after high-temperature baking thermal cracking more can effectively lift bonding wire and electrode
Between sticky limit.Protective layer 118 can protect its first electrode 112 of second electrode 110/ covered simultaneously
Upper surface is not by particle or dirty pollution, and breakdown protection layer when routing is engaged, and makes bonding wire and the second electricity
The first electrode 112 of pole 110/ is electrically connected, with certain level of adhesion.Furthermore, protected via thermal cracking
The tackability between bonding wire and the first electrode 112 of second electrode 110/, Jin Erti can be more lifted after layer 118
Rise the stability of light-emitting diode assembly.The experiment test of this embodiment is because taking immersion way formation protection
Layer 118, the thickness of protective layer 118 is about 272nm, but when taking rotary coating or other coating methods,
It can make it that thickness is thinner, and be 10 to 500 still possessing the optimal implementation thickness of the characteristic of anti-soil diaphragm
Angstrom when, its thrust test can all have been lifted.In another embodiment, routing engagement breakdown protection layer 118
Annealing temperature after afterwards thermal cracking being carried out again or engaged using routing is heat-treated, can be lifted bonding wire with
The tackability of electrode engagement.In one embodiment, the annealing temperature after routing can be 150 DEG C to 230 DEG C.
In the light-emitting diode assembly of another embodiment, in addition to the feature of foregoing embodiments, also wrap
Containing one first extension electrode and one second extension electrode (not illustrating)；With first embodiment and Figure 1A and
Exemplified by Figure 1B, the first extension electrode is arranged at the second semiconductor layer 108 of semiconductor light emitting lamination 103
On, and connection first electrode 112, extend from first electrode 112 to the direction of second electrode 110.Second
Extension electrode is arranged on the first semiconductor layer 104 of the exposure of semiconductor light emitting lamination 103, and connection
Second electrode 110, extends from second electrode 110 to the direction of first electrode 112.First extension electrode with
Electric current barrier layer (not illustrating) is may also set up under second extension electrode, is distributed with average current.First extension
Electrode is identical with the material of the second extension electrode and the material of first electrode 112 and second electrode 110,
Including chromium, platinum, titanium, aluminium, copper, nickel, gold or combinations of the above.Protective layer 118 may also set up in
The upper surface of one extension electrode and the second extension electrode, and substantially over its upper surface.First extension electricity
Pole and the size of the second extension electrode, such as width, less than first electrode 112 and second electrode 110
Width.The current spread of luminous lamination 103 is improved by the highly conductive characteristic of extension electrode, is being taken into account
Under the purpose of current spread, it can also reduce the light sent by luminescent layer 106 and be absorbed by the electrode, improve light and pluck
Go out efficiency.
In summary, the present invention by the upper surface of second electrode 110 and first electrode 112 by forming one
Layer protective layer 118, prevents from carrying out subsequent manufacturing processes (for example, electrically engaging manufacture craft in potted ends
During preceding or transport process) polluted or oxidation by particle or dirty attachment etc. with air contact.Protective layer
118 have relatively thin thickness, such as 10 to 500 angstroms, be able to will directly be protected in external electrically engagement
Layer 118 punctures, or makes to carry out externally electrically engagement after high-temperature baking again after the thermal cracking of protective layer 118,
And the quality and stability of light-emitting diode assembly are maintained simultaneously.
Although disclosing the present invention with reference to preferred embodiment above, but it is not limited to the present invention,
Any those of ordinary skill in the art, without departing from the spirit and scope of the present invention, when
It can change, substitute with retouching, therefore protection scope of the present invention ought be defined depending on appended claims
Person is defined.In addition, protection scope of the present invention is not necessarily limited by specification in the specific embodiment
Manufacture craft, machine, manufacture, material composition, device, method and step, any art
Middle tool usually intellectual can understand existing or following developed making from disclosure of the present invention
Technique, machine, manufacture, material composition, device, method and step, as long as can the reality here
Apply that implement more or less the same function in example or obtain more or less the same result all can be used according to the invention.Therefore,
Protection scope of the present invention includes above-mentioned manufacture craft, machine, manufacture, material composition, device, method
And step.In addition, each claim constitutes an other embodiment, and protection scope of the present invention is also wrapped
Include the combination of each claim and embodiment.
Claims (14)
1. a kind of light-emitting diode assembly, including：
Semiconductor light emitting lamination, on a substrate；
Electrode, on the semiconductor light emitting lamination, is used as the purposes externally electrically engaged；And
Protective layer, covers the upper surface of the electrode, and there is the wherein protective layer heat to produce the characteristic cracked
And/or in externally electrically engagement when can be breakdown characteristic.
2. the covering of light-emitting diode assembly as claimed in claim 1, wherein the better conforming to property of protective layer should
Semiconductor light emitting lamination, or/and semiconductor light emitting lamination includes the first semiconductor layer, luminescent layer and the
Two semiconductor layers.
3. light-emitting diode assembly as claimed in claim 1, the wherein protective layer are an anti-soil protective layers,
Or/and the wherein protective layer cracking temperature between 100 DEG C~400 DEG C, or/and the protective layer include it is fluorine-based
Compound-material, nano-high molecule coating material, nanometer iron-based material, nanometer nonferrous materials or light are touched
Matchmaker's stain resistant material, or/and the protective layer thickness between 10~500 angstroms, or/and the protective layer visible ray
Transparency be higher than 60%, or/and the protective layer water contact angle be more than 90 °, or/and the protective layer pass through rotation
The mode for turning coating or immersion is formed.
4. light-emitting diode assembly as claimed in claim 1, in addition to：
Electric current barrier layer, on the semiconductor light emitting lamination；And
Transparency conducting layer, on the semiconductor light emitting lamination and covers the electric current barrier layer, and wherein this is saturating
Bright conductive layer is located between the semiconductor light emitting lamination and the electrode, and the position correspondence of the electric current barrier layer
The position of the electrode.
5. light-emitting diode assembly as claimed in claim 1, in addition to：
Silicon dioxide layer of protection, is arranged on the semiconductor light emitting lamination, and expose the electrode.
6. a kind of manufacture method of light-emitting diode assembly, including：
Formation semiconductor is luminous to be stacked on a substrate；
An electrode is formed on the semiconductor light emitting lamination, the purposes externally electrically engaged is used as；And
Form a protective layer and cover the upper surface of the electrode, wherein there is the protective layer heat to produce cracking
Characteristic and/or in externally electrically engagement when can be breakdown characteristic.
7. the manufacture method of light-emitting diode assembly as claimed in claim 6, the wherein protective layer are more suitable
Answering property covers the semiconductor light emitting lamination, or/and the semiconductor light emitting lamination can more include one first semiconductor
Layer, a luminescent layer and one second semiconductor layer.
8. the manufacture method of light-emitting diode assembly as claimed in claim 6, in addition to：
A pair of outer electrically engagement steps are carried out to the light-emitting diode assembly.
9. the manufacture method of light-emitting diode assembly as claimed in claim 8, wherein this is externally electrically connected with
Closing step includes：Routing is engaged, and a bonding wire is electrically connected through the protective layer with the electrode or upside-down mounting connects
Close.
10. the manufacture method of light-emitting diode assembly as claimed in claim 9, wherein in routing engagement
Afterwards, in addition to carrying out heat treatment to the light-emitting diode assembly makes protective layer thermal cracking.
11. the manufacture method of light-emitting diode assembly as claimed in claim 8, in addition to：
Before this externally electrical engagement step, carrying out heat treatment to the light-emitting diode assembly makes protective layer
Thermal cracking.
12. the manufacture method of light-emitting diode assembly as claimed in claim 6, the wherein protective layer are one
Anti-soil protective layer, or/and the wherein protective layer cracking temperature between 100 DEG C~400 DEG C, or/and guarantor
Sheath includes fluorine-based compound material, nano-high molecule coating material, nanometer iron-based material, nanometer non-ferric
Sill or photocatalyst stain resistant material, or/and the protective layer thickness between 10~500 angstroms, or/and guarantor
The visible transparency of sheath be higher than 60%, or/and the protective layer water contact angle be more than 90 °, or/and should
Protective layer is formed by way of rotary coating or immersion.
13. the manufacture method of light-emitting diode assembly as claimed in claim 6, in addition to：
An electric current barrier layer is formed on the semiconductor light emitting lamination；And
A transparency conducting layer is formed on the semiconductor light emitting lamination and covering the electric current barrier layer, wherein should
Transparency conducting layer is located between the semiconductor light emitting lamination and the electrode, and the position pair of the electric current barrier layer
Should electrode position.
14. the manufacture method of light-emitting diode assembly as claimed in claim 6, in addition to form a dioxy
SiClx protective layer patterns the silicon dioxide layer of protection to expose this on the semiconductor light emitting lamination
Electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610030848.8A CN106992195B (en) | 2016-01-18 | 2016-01-18 | Light emitting diode device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610030848.8A CN106992195B (en) | 2016-01-18 | 2016-01-18 | Light emitting diode device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106992195A true CN106992195A (en) | 2017-07-28 |
| CN106992195B CN106992195B (en) | 2021-10-15 |
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