CN106981535A - 一种双面玻璃bipv光伏组件 - Google Patents
一种双面玻璃bipv光伏组件 Download PDFInfo
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- 239000011521 glass Substances 0.000 title claims abstract description 20
- 238000013084 building-integrated photovoltaic technology Methods 0.000 title claims abstract description 11
- 239000012528 membrane Substances 0.000 claims abstract description 21
- 239000002131 composite material Substances 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 8
- 229920005591 polysilicon Polymers 0.000 claims abstract description 8
- 238000005538 encapsulation Methods 0.000 claims abstract description 5
- 230000005855 radiation Effects 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000004383 yellowing Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A30/00—Adapting or protecting infrastructure or their operation
- Y02A30/60—Planning or developing urban green infrastructure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明提供了一种双面玻璃BIPV光伏组件,包括硅晶片电池片,在硅晶片电池片的上、下表面封装PET/POE复合膜,在上表面PET/POE复合膜上方设有p‑/n‑型多晶硅吸收层,下表面PET/POE复合膜的下方设有n+/p+型a‑Si:H发射层,在p‑/n‑型多晶硅吸收层的上方和n+/p+型a‑Si:H发射层的下方均设有光伏玻璃,所述的光伏玻璃外表面设有防辐射金属薄膜。本发明工艺简单,耐候性高、抗黄变性能增强、性能优良,成本低。
Description
技术领域
本发明涉及光伏组件领域,具体是一种双面玻璃BIPV光伏组件。
背景技术
太阳能电池是利用太阳光进行发电的半导体器件,太阳能电池芯片可以为非晶硅、非晶硅锗、微晶硅或纳米晶硅的单节或多节叠层硅基薄膜太阳能电池、CIGS 太阳能电池、铜铟锡太阳能电池、铜铟硫太阳能电池、单晶或准单晶硅太阳能电池、多晶硅太阳能电池、碲化镉太阳能电池、砷化镓太阳能电池、有机太阳能电池、染料敏化太阳能电池等。现有技术中采用的TPT材料,存在的缺点在于:TPT材料的使用寿命短,不透光,导致光伏组件的使用寿命短,满足不了客户对透光的需求。另外, EVA胶膜是目前主要用于封装太阳能电池的材料,但其存在一些不足,如易黄变老化,耐候性差、使用寿命短。
发明内容
本发明提供了一种具有清洁、高效、无污染、无噪音等特点,不排放任何有害物质的双面玻璃中空BIPV光伏组件。
本发明所述的一种双面玻璃BIPV光伏组件,包括硅晶片电池片,在硅晶片电池片的上、下表面封装PET/POE复合膜,在上表面PET/POE复合膜上方设有p-/n-型多晶硅吸收层,下表面PET/POE复合膜的下方设有n+/p+型a-Si:H发射层,在p-/n-型多晶硅吸收层的上方和n+/p+型a-Si:H发射层的下方均设有光伏玻璃,所述的光伏玻璃外表面设有防辐射金属薄膜。
进一步改进,所述的PET/POE复合膜由PET基材膜和改性POE胶膜贴压复合而成。
本发明的有益效果在于:
本发明的双面玻璃 BIPV 光伏组件的结构与普通太阳电池组件相比,最大的不同之处在于用玻璃代替了寿命短不透光的 TPT,极大地延长了光伏组件的寿命,并且能满足客户透光的要求;另外,BIPV 光伏组件具有清洁、高效、无污染、无噪音等特点,不排放任何有害物质,属绿色环保产品;采用PET/POE复合膜代替EVA胶膜封装,PET/POE复合膜的生产工艺简单,耐候性高、抗黄变性能增强、性能优良,成本低,可直接作为粘结背板和电池片的连接层,作为光伏组件封装材料有潜在的应用;玻璃外还设有防辐射金属膜,使得光伏组件对外辐射性小。
附图说明
图1为本发明结构示意图。
具体实施方式
下面结合附图对本发明做进一步说明。
本发明一种双面玻璃BIPV光伏组件,包括硅晶片电池片1,在硅晶片电池片的上、下表面封装PET/POE复合膜2,在上表面PET/POE复合膜上方设有p-/n-型多晶硅吸收层3,下表面PET/POE复合膜的下方设有n+/p+型a-Si:H发射层4,在p-/n-型多晶硅吸收层的上方和n+/p+型a-Si:H发射层的下方均设有光伏玻璃5,所述的光伏玻璃外表面设有防辐射金属薄膜6。
所述的PET/POE复合膜由PET基材膜和改性POE胶膜贴压复合而成,所述的PET基材膜1厚度为15 μm-30 μm;所述的改性POE胶膜2厚度为5 μm-10 μm。
本发明具体应用途径很多,以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以作出若干改进,这些改进也应视为本发明的保护范围。
Claims (2)
1.一种双面玻璃BIPV光伏组件,其特征在于:包括硅晶片电池片,在硅晶片电池片的上、下表面封装PET/POE复合膜,在上表面PET/POE复合膜上方设有p-/n-型多晶硅吸收层,下表面PET/POE复合膜的下方设有n+/p+型a-Si:H发射层,在p-/n-型多晶硅吸收层的上方和n+/p+型a-Si:H发射层的下方均设有光伏玻璃,所述的光伏玻璃外表面设有防辐射金属薄膜。
2.根据权利要求1所述双面玻璃BIPV光伏组件,其特征在于:所述的PET/POE复合膜由PET基材膜和改性POE胶膜贴压复合而成。
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202012161U (zh) * | 2011-03-23 | 2011-10-19 | 恒基光伏电力科技股份有限公司 | 光伏建筑一体化用晶体硅光伏组件 |
US20110315215A1 (en) * | 2010-06-28 | 2011-12-29 | Du Pont Apollo Ltd. | Color building-integrated photovoltaic (bipv) module |
KR20130070470A (ko) * | 2011-12-19 | 2013-06-27 | 엘지이노텍 주식회사 | 태양전지 모듈 |
CN103818079A (zh) * | 2014-03-07 | 2014-05-28 | 无锡市圣能光源科技有限公司 | 一种用于光伏组件封装的pet/poe复合膜及其制备方法 |
CN103872160A (zh) * | 2014-03-14 | 2014-06-18 | 惠州市易晖太阳能科技有限公司 | 一种混合层叠式太阳能组件及其制造方法 |
CN204651331U (zh) * | 2015-06-10 | 2015-09-16 | 合肥润嘉节能玻璃有限责任公司 | 一种低辐射导光太阳能玻璃 |
CN206878014U (zh) * | 2017-05-09 | 2018-01-12 | 无锡赛晶太阳能有限公司 | 一种双面玻璃bipv光伏组件 |
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2017
- 2017-05-09 CN CN201710320462.5A patent/CN106981535A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110315215A1 (en) * | 2010-06-28 | 2011-12-29 | Du Pont Apollo Ltd. | Color building-integrated photovoltaic (bipv) module |
CN202012161U (zh) * | 2011-03-23 | 2011-10-19 | 恒基光伏电力科技股份有限公司 | 光伏建筑一体化用晶体硅光伏组件 |
KR20130070470A (ko) * | 2011-12-19 | 2013-06-27 | 엘지이노텍 주식회사 | 태양전지 모듈 |
CN103818079A (zh) * | 2014-03-07 | 2014-05-28 | 无锡市圣能光源科技有限公司 | 一种用于光伏组件封装的pet/poe复合膜及其制备方法 |
CN103872160A (zh) * | 2014-03-14 | 2014-06-18 | 惠州市易晖太阳能科技有限公司 | 一种混合层叠式太阳能组件及其制造方法 |
CN204651331U (zh) * | 2015-06-10 | 2015-09-16 | 合肥润嘉节能玻璃有限责任公司 | 一种低辐射导光太阳能玻璃 |
CN206878014U (zh) * | 2017-05-09 | 2018-01-12 | 无锡赛晶太阳能有限公司 | 一种双面玻璃bipv光伏组件 |
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