CN106952978A - 一种光伏组件 - Google Patents

一种光伏组件 Download PDF

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Publication number
CN106952978A
CN106952978A CN201710320504.5A CN201710320504A CN106952978A CN 106952978 A CN106952978 A CN 106952978A CN 201710320504 A CN201710320504 A CN 201710320504A CN 106952978 A CN106952978 A CN 106952978A
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composite membranes
backboard
pet composite
reflector layer
photovoltaic module
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蒋建宝
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WUXI SAIJING SOLAR Co Ltd
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WUXI SAIJING SOLAR Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明提供了一种光伏组件，包括硅晶片电池片，在硅晶片电池片的上、下表面封装具有三层结构的PET复合膜，在上表面PET复合膜上方和下表面PET复合膜的下方设有背板，在上表面PET复合膜上方的背板上方和下表面PET复合膜的下方的背板下方设有反光层，在背板上方反光层的上方和背板下方的反光层的下方设有光伏玻璃，所述的光伏玻璃外表面设有防辐射金属薄膜。本发明工艺简单，耐候性高、抗黄变性能增强、性能优良，成本低。

Description

一种光伏组件
技术领域
本发明涉及光伏组件领域，具体是一种双面玻璃光伏组件。
背景技术
太阳能电池是利用太阳光进行发电的半导体器件，太阳能电池芯片可以为非晶硅、非晶硅锗、微晶硅或纳米晶硅的单节或多节叠层硅基薄膜太阳能电池、CIGS 太阳能电池、铜铟锡太阳能电池、铜铟硫太阳能电池、单晶或准单晶硅太阳能电池、多晶硅太阳能电池、碲化镉太阳能电池、砷化镓太阳能电池、有机太阳能电池、染料敏化太阳能电池等。现有技术中采用的TPT材料，存在的缺点在于:TPT材料的使用寿命短，不透光，导致光伏组件的使用寿命短，满足不了客户对透光的需求。另外， EVA胶膜是目前主要用于封装太阳能电池的材料，但其存在一些不足，如易黄变老化，耐候性差、使用寿命短。
发明内容
本发明提供了一种具有清洁、高效、无污染、无噪音等特点，不排放任何有害物质的双面玻璃光伏组件。
本发明所述的一种光伏组件，包括硅晶片电池片，在硅晶片电池片的上、下表面封装具有三层结构的PET复合膜，在上表面PET复合膜上方和下表面PET复合膜的下方设有背板，在上表面PET复合膜上方的背板上方和下表面PET复合膜的下方的背板下方设有反光层，在背板上方反光层的上方和背板下方的反光层的下方设有光伏玻璃，所述的光伏玻璃外表面设有防辐射金属薄膜。
进一步改进，所述的PET复合膜为三层结构，由改性EVA/POE薄膜与经电晕处理过的PET基材膜的两面进行贴压复合而成。
进一步改进，所述的改性EVA/POE薄膜由阻燃EVA/POE树脂与抗氧化剂以质量比为100:0.1~1共同混合得到。
本发明的有益效果在于：
本发明的双面玻璃光伏组件的结构与普通太阳电池组件相比，最大的不同之处在于用玻璃代替了寿命短不透光的 TPT，极大地延长了光伏组件的寿命，并且能满足客户透光的要求；另外，该光伏组件具有清洁、高效、无污染、无噪音等特点，不排放任何有害物质，属绿色环保产品；采用三层结构的PET复合膜代替EVA胶膜封装，具有三层结构的PET复合膜加工工艺简单，成本低，具有优良的阻燃性和力学性能，以及良好的阻隔性、耐热性、电绝缘性和耐老化性，可直接作为粘结背板和电池片的连接层，作为光伏组件封装材料有潜在的应用；玻璃外还设有防辐射金属膜，使得光伏组件对外辐射性小。背板上设置有反光层，能够将照射到边缘区的太阳光反射到玻璃板，该太阳光在玻璃板内经反射和折射再次被采集到电池板上，有效增加了电池板的采光率，从而提高发电效率。
附图说明
图1为本发明结构示意图。
具体实施方式
下面结合附图对本发明做进一步说明。
本发明一种光伏组件，包括硅晶片电池片1，在硅晶片电池片的上、下表面封装具有三层结构的PET复合膜2，在上表面PET复合膜上方和下表面PET复合膜的下方设有背板3，在上表面PET复合膜上方的背板上方和下表面PET复合膜的下方的背板下方设有反光层4，在背板上方反光层的上方和背板下方的反光层的下方设有光伏玻璃5，所述的光伏玻璃外表面设有防辐射金属薄膜6。
所述的PET复合膜为三层结构，由改性EVA/POE薄膜与经电晕处理过的PET基材膜的两面进行贴压复合而成；所述的改性EVA/POE薄膜由阻燃EVA/POE树脂与抗氧化剂以质量比为100:0.1~1共同混合得到。
本发明具体应用途径很多，以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以作出若干改进，这些改进也应视为本发明的保护范围。

Claims (3)

1.一种光伏组件，其特征在于：包括硅晶片电池片，在硅晶片电池片的上、下表面封装具有三层结构的PET复合膜，在上表面PET复合膜上方和下表面PET复合膜的下方设有背板，在上表面PET复合膜上方的背板上方和下表面PET复合膜的下方的背板下方设有反光层，在背板上方反光层的上方和背板下方的反光层的下方设有光伏玻璃，所述的光伏玻璃外表面设有防辐射金属薄膜。
2.根据权利要求1所述光伏组件，其特征在于：所述的PET复合膜为三层结构，由改性EVA/POE薄膜与经电晕处理过的PET基材膜的两面进行贴压复合而成。
3.根据权利要求2所述光伏组件，其特征在于：所述的改性EVA/POE薄膜由阻燃EVA/POE树脂与抗氧化剂以质量比为100:0.1~1共同混合得到。
CN201710320504.5A 2017-05-09 2017-05-09 一种光伏组件 Pending CN106952978A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107527963A (zh) * 2017-08-31 2017-12-29 合肥风生水起信息科技有限公司 一种新型的光伏组件

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110315215A1 (en) * 2010-06-28 2011-12-29 Du Pont Apollo Ltd. Color building-integrated photovoltaic (bipv) module
CN203134840U (zh) * 2013-01-29 2013-08-14 江苏晨电太阳能光电科技有限公司 防辐射双玻面太阳能电池组件
KR20140003679A (ko) * 2012-06-22 2014-01-10 주식회사 티모이앤엠 Ｂｉｐｖ모듈 제조방법
CN103832034A (zh) * 2014-03-07 2014-06-04 宜兴市王者塑封有限公司 用于光伏组件封装具有三层结构的pet复合膜及其制备方法
CN205828403U (zh) * 2016-07-22 2016-12-21 阳光电源股份有限公司 一种背面反光光伏组件
CN206878015U (zh) * 2017-05-09 2018-01-12 无锡赛晶太阳能有限公司 一种光伏组件

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110315215A1 (en) * 2010-06-28 2011-12-29 Du Pont Apollo Ltd. Color building-integrated photovoltaic (bipv) module
KR20140003679A (ko) * 2012-06-22 2014-01-10 주식회사 티모이앤엠 Ｂｉｐｖ모듈 제조방법
CN203134840U (zh) * 2013-01-29 2013-08-14 江苏晨电太阳能光电科技有限公司 防辐射双玻面太阳能电池组件
CN103832034A (zh) * 2014-03-07 2014-06-04 宜兴市王者塑封有限公司 用于光伏组件封装具有三层结构的pet复合膜及其制备方法
CN205828403U (zh) * 2016-07-22 2016-12-21 阳光电源股份有限公司 一种背面反光光伏组件
CN206878015U (zh) * 2017-05-09 2018-01-12 无锡赛晶太阳能有限公司 一种光伏组件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107527963A (zh) * 2017-08-31 2017-12-29 合肥风生水起信息科技有限公司 一种新型的光伏组件

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Application publication date: 20170714