CN106972069B - A kind of ultra-thin materials-novel metal contact electrode - Google Patents
A kind of ultra-thin materials-novel metal contact electrode Download PDFInfo
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- CN106972069B CN106972069B CN201710247377.0A CN201710247377A CN106972069B CN 106972069 B CN106972069 B CN 106972069B CN 201710247377 A CN201710247377 A CN 201710247377A CN 106972069 B CN106972069 B CN 106972069B
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- 238000002955 isolation Methods 0.000 claims description 3
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 20
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
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- 229910052710 silicon Inorganic materials 0.000 description 9
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000002207 thermal evaporation Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
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- 229910052738 indium Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
Abstract
The invention discloses a kind of ultra-thin materials-novel metals to contact electrode.Including substrate and the ultra-thin materials and multilayer metallic electrode that are placed on substrate, the whole or a portion of ultra-thin materials are between metal electrode, so that the upper and lower surface of ultra-thin materials is contacted with metal electrode respectively, electric current is flowed into ultra-thin materials through multilayer metallic electrode from the upper and lower surfaces of ultra-thin materials respectively.The invention enables contact conductivity to increase, and contact resistance reduces, and structure is simple, easy to make, is conducive to integrate, can be directly applied in current ultra-thin materials opto-electronic device.
Description
Technical field
The present invention relates to the opto-electronic devices such as ultra-thin materials photodetector, electrooptic modulator, more particularly, to one kind
Ultra-thin materials-novel metal contacts electrode, can be effectively reduced the contact resistance of ultra-thin materials and metal.
Background technique
Ultra-thin materials have flexibility well, are easy to integrated with semiconductor devices, also have at optically and electrically aspect excellent
Different property.Such as the graphene ultra-thin materials being found earliest, rely on its unique optics, electricity and heat property, by
Extensive concern.Zero band gap of graphene makes it have the ultraviolet wide absorption spectrum to far infrared；High carrier mobility, energy
It is enough in the opto-electronic device of production high-speed response；High heat conductance has higher thermal effect compared to traditional metal heater
Rate；It is easily formed Schottky junction structure with conventional semiconductors, photoconductive device can be made；Be easy to integrate with semiconductor devices etc..
Therefore, ultra-thin materials are in photodetector, and electrooptic modulator, the opto-electronic devices aspect such as heating/heat transfer device also has huge
Potentiality.
For opto-electronic devices such as ultra-thin materials photodetector, electrooptic modulators, in addition to paying close attention to its responsiveness, modulation deeply
Except degree and service band, response speed is also a very important index, and influences ultra-thin materials opto-electronic device and ring
Answer speed an important physical amount be exactly ultra-thin materials and metal electrode contact resistance.System is contacted with metal in ultra-thin materials
In system, ultra-thin materials surface lacks the binding site with metal, affects the interlayer tunnelling of electronics between ultra-thin materials and metal,
Ultra-thin materials and metal are caused to contact conductivity limited.A kind of method is by selecting different types of metal or metallic combination
And the thickness optimization of metal electrode, promote the conductivity of the contact resistance of metal and ultra-thin materials；Another is exactly to use
The method of metal and ultra-thin materials EDGE CONTACT.But both methods is very high to technique requirement, it is also necessary to the structure of metal
It optimizes, complex process.
Summary of the invention
In order to solve the problems, such as background technique, it is an object of the invention to propose a kind of ultra-thin materials-metal
Novel connecting touched electrode for ultra-thin materials and has low contact resistance, can effectively reduce connecing for material and metal electrode
Electric shock resistance, to greatly improve the response speed or modulating speed of ultra-thin materials photoelectric device.
The technical solution adopted by the present invention:
The present invention includes the insulating substrates such as silica, multilayer metallic electrode and ultra-thin materials；
Including substrate and the ultra-thin materials and multilayer metallic electrode that are placed on substrate, the whole of ultra-thin materials or wherein
A part is between metal electrode, so that the upper and lower surface of ultra-thin materials is contacted with metal electrode respectively.
Scheme first is that ultra-thin materials are located among the multilayer metallic electrode of part,
Scheme is second is that ultra-thin materials can also be located between whole multilayer metallic electrodes, by external on concrete technology
The metal electrode of different layers is connected to by the method for conducting wire, is played the role of identical with scheme one.
Electrode structure innovative point proposed by the present invention is: electric current is not to flow into two dimension or film material from single-sided electrode
Material, but two dimension or thin-film material are flowed into from more sides or multilayer metallic electrode.Specifically: electric current is from double layer of metal electrode
It flows into, electric current is flowed into ultra-thin materials through multilayer metallic electrode from the upper and lower surfaces of ultra-thin materials respectively, so that golden
The contact resistance belonged between electrode and ultra-thin materials reduces.
Multilayer metallic electrode can be in contact, and can not also contact, but have electric current to flow into two dimension or thin-film material.
A kind of specific embodiment be include substrate and the ultra-thin materials being placed on substrate and upper layer and lower layer metal electrode,
Double layer of metal electrode is placed in the side on substrate, and ultra-thin materials a portion is placed in the other side on substrate, and ultra-thin materials are another
Part is located between a part of double layer of metal electrode, and double layer of metal electrode another part surface is directly in contact, so that ultra-thin
The upper and lower surface of material a part is contacted with upper layer and lower layer metal electrode respectively.
A kind of specific embodiment be include substrate and the ultra-thin materials being placed on substrate and upper layer and lower layer metal electrode,
Ultra-thin materials are all placed between lower metal electrode and upper layer metal electrode, so that being followed successively by lower metal electricity from top to bottom
Pole, ultra-thin materials and upper layer metal electrode, ultra-thin materials whole upper and lower surface are contacted with upper layer and lower layer metal electrode respectively, and two layers
It does not contact between surface of metal electrode and is connected by lead.
The area of lower metal electrode is greater than upper layer metal electrode in specific implementation, so that lead is facilitated to connect.
A kind of specific embodiment be include substrate and the ultra-thin materials being placed on substrate and upper layer and lower layer metal electrode,
Double layer of metal electrode is placed in the side on substrate, and groove is carved on substrate, and lower metal electrode is placed in groove, upper layer metal electricity
Pole is placed on lower metal electrode, and ultra-thin materials a portion is placed in the other side on substrate, and ultra-thin materials another part extends
On to lower metal electrode top and between upper layer metal electrode and a part of lower metal electrode, double layer of metal electricity
Pole another part surface is directly in contact, so that the upper and lower surface of ultra-thin materials a part connects with upper layer and lower layer metal electrode respectively
Touching.
A kind of specific embodiment be include substrate and the ultra-thin materials being placed on substrate, convex configuration and upper layer and lower layer
Metal electrode, double layer of metal electrode are placed in the side on substrate, and the side on substrate is equipped with convex configuration, ultra-thin materials wherein one
It is partially disposed in convex configuration, ultra-thin materials are between upper layer metal electrode and a part of lower metal electrode, two layers of gold medal
Belong to electrode another part surface to be directly in contact, so that the upper and lower surface of ultra-thin materials a part is electric with upper layer and lower layer metal respectively
Pole contact.The convex configuration can be waveguide, or other structures.
A kind of specific embodiment be include substrate and the ultra-thin materials being placed on substrate, slab waveguide and metal electricity
Pole, the two sides on substrate are equipped with one group of metal electrode, and every group of metal electrode includes upper layer and lower layer metal electrode, in the middle part of substrate
It is equipped with slab waveguide, is placed on slab waveguide in the middle part of ultra-thin materials, separation layer is set between ultra-thin materials and slab waveguide, it is ultra-thin
Material two sides are located between the upper layer metal electrode of two groups of metal electrodes and a part of lower metal electrode, every group of metal
Double layer of metal electrode another part surface of electrode is directly in contact so that the upper and lower surface of ultra-thin materials a part respectively with it is upper
Lower double layer of metal electrode contact.
A kind of specific embodiment be include substrate and the two panels ultra-thin materials, slab waveguide and the metal that are placed on substrate
Electrode, the two sides on substrate are equipped with one group of metal electrode, and every group of metal electrode includes upper layer and lower layer metal electrode, and first
Ultra-thin materials side is located therein between the upper layer metal electrode of one group of metal electrode and a part of lower metal electrode, and first
Piece ultra-thin materials are another to be placed on upper surface in the middle part of substrate；Second ultra-thin materials side is located at the upper layer of another group of metal electrode
Between metal electrode and a part of lower metal electrode, second ultra-thin materials other side is placed on first by isolation and surpasses
On the thin material other side；It is equipped with slab waveguide on second ultra-thin materials other side, so that being followed successively by from top to bottom in the middle part of substrate
First ultra-thin materials, first layer separation layer, second ultra-thin materials, second layer separation layer and slab waveguide.The bar shaped wave
It leads as silicon waveguide.
The ultra-thin materials are the two-dimensional material of graphene or molybdenum disulfide or other single layers or multilayer.
The ultra-thin materials replace with the thin-film material with conductive capability, such as tin indium oxide.
The thickness of the ultra-thin materials is 0.1nm~1 μm.
Novel electrode structure is not only suitable for the ultra-thin materials such as graphene, molybdenum disulfide in the present invention, is also suitable and similar oxygen
Change this kind of thin-film material with conductive capability of indium tin.
The double layer of metal electrode also could alternatively be multilayer metallic electrode.
The metal electrode is a kind of metal electrode of the either various metals combination production 2 of electrode made of metal.
The substrate is using insulating materials such as silica.
The invention has the advantages that:
Structure of the invention increases the binding site of ultra-thin materials and Metal contact regions, so that contact conductivity increases,
Contact resistance reduces.
Manufacture craft of the present invention is simple, does not need to carry out metal species to electrode and structure is optimized and can significantly be dropped
The contact resistance of low metal and ultra-thin materials.Realize do not need to carry out metal electrode special design can be with current gold
The manufacture craft for belonging to electrode is compatible, and structure is simple, easy to make, is conducive to integrate, can be directly applied to current ultra-thin materials
In opto-electronic device.
Detailed description of the invention
Fig. 1 is structure of the invention top view.
Fig. 2 is the A-A ' cross-sectional view of Fig. 1.
Fig. 3 is the B-B ' cross-sectional view of Fig. 1.
Fig. 4 is the metal electrode connectivity structure schematic diagram by lead by different layers.
Fig. 5, Fig. 6 illustrate the case where ultra-thin materials are layered on Different Plane (recessed, flat, convex).
Fig. 7 is 1 structure chart of embodiment.
Fig. 8 is 2 structure chart of embodiment.
Fig. 9 is the concrete structure schematic diagram that single-layer graphene ultra-thin materials are selected in the present invention.
Figure 10 is the resistance plot that embodiment is obtained by the method for measuring I-V curve.
In figure: 1, ultra-thin materials, 2, metal electrode, 3, metal electrode, 4, substrate, 5, lead, 6, convex configuration, 7, bar shaped
Waveguide, 8, separation layer.
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and examples.
As shown in Figure 1, Figure 2, Figure 3 shows, ultra-thin materials are upper and lower metal electrode to be isolated entirely from, ultra-thin materials with
Part metals electrode contacts with each other, to ensure that upper and lower metal electrode, some is directly contacted with each other, when probe and gold
When belonging to electrode contact, electric current is allowed to separately flow into ultra-thin materials from the electrode of two sides.
As shown in figure 4, when ultra-thin materials completely open upper and lower electrode separation, it can also by the method that outside connects lead
Electric current is introduced into ultra-thin materials from two lateral electrodes to realize, realizes the effect that contact resistance reduces.
As shown in Fig. 3, Fig. 5, Fig. 6, ultra-thin materials have certain flexibility, can be laid on recessed, smooth, convex put down
Face；Electrode can both be produced on flat substrate, can also be embedded into substrate.
As shown in fig. 7,7 two sides of slab waveguide make multilayer metallic electrode, ultra-thin materials 1 be located at multi-layered electrode 2,3 it
Between, and the electrode of two sides is connected to, intermediate ultra-thin materials 1 are layered on slab waveguide 7, and there are a separation layers 8 above for waveguide 7.
As shown in figure 8, there are a separation layers 8 to form capacitance structure among two layers of ultra-thin materials 1, silicon waveguide 7 is located at upper layer
1 surface of ultra-thin materials.
The working principle of the invention:
When the region that probe contact double layer of metal directly contacts, the electric current in probe imports metal electrode, when electric current is logical
When crossing metal electrode and ultra-thin materials contact area, one part of current can flow into ultra-thin materials, a part electricity by upper layer metal
Stream flows into ultra-thin materials by lower metal.It contacts with each other compared to single-layer metal and ultra-thin materials, passes through upper layer and lower layer metal
The binding site that metal is contacted with ultra-thin materials can be increased by contacting with each other with ultra-thin materials, so that ultra-thin materials and metal electrode
Contact conductivity significantly increase, contact resistance is substantially reduced.
Embodiment 1
As shown in fig. 7, the present embodiment includes substrate 4 and the ultra-thin materials being placed on substrate 41, slab waveguide 7 and metal
Electrode 2,3, the two sides on substrate 4 are equipped with one group of metal electrode, every group of metal electrode include upper layer and lower layer metal electrode 2,
3, be equipped with slab waveguide 7 in the middle part of substrate 4, be placed in the middle part of ultra-thin materials 1 on slab waveguide 7, ultra-thin materials 1 and slab waveguide 7 it
Between separation layer 8 is set so that ultra-thin materials 1 are not directly contacted with slab waveguide 7,1 two sides of ultra-thin materials be located at two groups it is golden
Belong between the upper layer metal electrode 2 of electrode and a part of lower metal electrode 3, the double layer of metal electrode 2 of every group of metal electrode,
3 another part surfaces are directly in contact so that the upper and lower surface of a part of ultra-thin materials 1 respectively with upper layer and lower layer metal electrode 2,
3 contacts.
In this embodiment, select Si as slab waveguide 7.Its manufacturing process is: being existed using high temperature oxidation process
The SiO of one layer of about 3 μ m-thick is grown on silicon substrate2Simple thermal oxidation technology can be used without doping in film, this sandwich layer,
And the technique is suitable for producing in enormous quantities, therefore cost is very low.Re-form the Si film of 0.22 μ m-thick.
It uses the technique of electron beam exposure, dry etching that Si film is etched slab waveguide for one fixed width, then passes through
The method of high temperature thermal oxidation makes one layer of SiO2 separation layer 8.Then pass through the production of the method for thermal evaporation or sputtering in search coverage
Ultra-thin materials are transferred on piece using the method that wet process or dry method shift, and passed through by lower metal electrode, Ti-Au electrode 2
Electron beam exposure and O2Ultra-thin materials 1 are fabricated to the shape of design by the method for etching, are finally made in ultra-thin materials upper surface
Second layer metal electrode, Au electrode 3.In actual test, to light signal by coupling grating input waveguide 7, passed through waveguide 7
It is defeated to search coverage when, a part is absorbed to light signal by the ultra-thin materials 1 on 7 surface of waveguide, and ultra-thin materials 1 absorb after light
Photo-generated carrier can be generated.When no-bias, the metal electrode of two sides is connected by probe and conducting wire, because of the metal electricity of two sides
Pole is contacted with ultra-thin materials can generate different surface potentials, so there is the change of gradient of potential, photoproduction on ultra-thin materials surface
Carrier is separated, and forms photoelectric current in the loop；When having bias, applying bias separates photo-generated carrier, photoelectric current
It can further increase, measure bigger responsiveness.One layer of separation layer 8 is made between ultra-thin materials 1 and waveguide 7, is prevented ultra-thin
Material 1 absorbs the photo-generated carrier that light generates and goes in silicon waveguide, circuit is not entered into, to reduce the response of detector
Degree.In entire circuit, device resistance is divided into two parts, and a part is the self-resistance of ultra-thin materials 1, and another part is both sides gold
Belong to the contact resistance of electrode and ultra-thin materials.In device design, it is in contact using double-level-metal with ultra-thin materials, reduces both sides
The contact resistance of metal electrode and ultra-thin materials realizes detector response to be effectively reduced the all-in resistance in entire circuit
The promotion of speed.
Embodiment 2
As shown in fig. 7, the present embodiment includes substrate 4 and the two panels ultra-thin materials 1 being placed on substrate 4,7 and of slab waveguide
Metal electrode 2,3, the two sides on substrate 4 are equipped with one group of metal electrode, and every group of metal electrode includes upper layer and lower layer metal electricity
Pole 2,3, first 1 side of ultra-thin materials are located therein the upper layer metal electrode 2 and lower metal electrode 3 of one group of metal electrode
Between a part, first ultra-thin materials 1 is another to be placed on 4 middle part upper surface of substrate；Second 1 side of ultra-thin materials is located at another
Between the upper layer metal electrode 2 of one group of metal electrode and a part of lower metal electrode 3, second 1 other side of ultra-thin materials
It is placed on first 1 other side of ultra-thin materials by separation layer 8, second 1 other side of ultra-thin materials and first ultra-thin materials 1
First layer separation layer 8 is set between the other side, forms capacitance structure；Between the other side and silicon waveguide 7 of second ultra-thin materials
Second layer separation layer 8 is set, is equipped with slab waveguide 7 on the separation layer 8 of the second layer, so that 4 middle part of substrate is followed successively by from top to bottom
First ultra-thin materials 1,8, second ultra-thin materials 1 of first layer separation layer, second layer separation layer 8 and slab waveguide 7.
In this embodiment, Si slab waveguide 7 is selected.Its manufacturing process is: utilizing high temperature oxygen chemical industry in silicon substrate
Skill grows one layer of SiO on a silicon substrate2Film, simple thermal oxidation technology can be used without doping in this sandwich layer, and the work
Skill is suitable for producing in enormous quantities, therefore cost is very low.
First pass through the method production lower metal electrode of thermal evaporation or sputtering, Ti-Au electrode 2, then using wet process or
Ultra-thin materials 1 are transferred to the substrate surface with SiO2 film by the method for dry method transfer, pass through photoetching, O2It etches ultra-thin material
Material 1 is fabricated to corresponding shape.A thin layer of medium is deposited as separation layer 8 in the absorption region of ultra-thin materials 1, is retransferred
Second layer ultra-thin materials 1, so that two layers of ultra-thin materials 1 constitutes capacitance structure.Then pass through the method system of thermal evaporation or sputtering
Make second layer metal electrode, Au electrode 3.Then second layer separation layer is deposited at the capacitance structure of ultra-thin materials by thermal evaporation
8, one layer of Si film is deposited at the capacitance structure of ultra-thin materials finally by thermal evaporation, makes Si slab waveguide 7.As photoelectricity
Modulator, in ultra-thin materials capacitance structure, upper layer ultra-thin materials 1 are compared with lower layer ultra-thin materials 1, upper layer ultra-thin materials 1 away from
It is closer from waveguide 7, play main optical absorption.When ultra-thin materials 1 of the voltage-drop loading to upper and lower two sides, ultra-thin materials 1
Surface will appear the accumulation of charge, and the carrier concentration on 1 surface of ultra-thin materials is caused to change, its fermi level is caused to occur
Variation, to influence the optical absorption loss of ultra-thin materials 1.When the voltage signal for being loaded into two layers of ultra-thin materials 1 is that have centainly
When the modulated signal of frequency, periodic variation can be also presented in the optical absorption loss of ultra-thin materials 1, to play modulation effect.
On the one hand it can increase the modulation depth of modulator by increasing the voltage loaded；On the other hand, ultra-thin materials can also be increased
In the length of waveguide surface, increase the modulation depth of modulator.Modulator in the example has two layers of separation layer 8, lower layer's isolation
Layer 8 and two layers of ultra-thin materials 1 constitute capacitance structure, play the role of on-load voltage and change ultra-thin materials optical absorption loss；Upper layer
Separation layer 8 keeps apart the ultra-thin materials 1 on upper layer with silicon waveguide 7, and the electric charge transfer for preventing 1 surface of upper layer ultra-thin materials from accumulating arrives
Silicon waveguide 7, influences modulation depth and modulating speed.The modulating speed of modulator in the example is limited to the resistance of capacitance structure
And capacitor, wherein resistance a part of modulator is the resistance of ultra-thin materials, and another part is ultra-thin materials and metal electrode
Contact resistance, when one timing of capacitor, the electrode structure that modulator uses multiple layer metal to be in contact with ultra-thin materials can be effectively
Reduce contact resistance, to realize the promotion of the modulating speed of modulator.
Embodiment 3
As shown in Figure 1-3, specific implementation includes substrate 4 and the ultra-thin materials 1 and upper layer and lower layer metal that are placed on substrate 4
Electrode 2,3, double layer of metal electrode 2,3 are placed in the side on substrate 4, and 1 a portion of ultra-thin materials is placed in another on substrate 4
Side, 1 another part of ultra-thin materials are located between a part of double layer of metal electrode 2,3, double layer of metal electrode 2,3 another part tables
Face is directly in contact, so that the upper and lower surface of 1 a part of ultra-thin materials is contacted with upper layer and lower layer metal electrode respectively.
Embodiment 4
As shown in figure 4, specific implementation includes substrate 4 and the ultra-thin materials 1 being placed on substrate 4 and upper layer and lower layer metal electricity
Pole 2,3, ultra-thin materials 1 are all placed between lower metal electrode 3 and upper layer metal electrode 2, so that being followed successively by down from top to bottom
Layer metal electrode 3, ultra-thin materials 1 and upper layer metal electrode 2, the whole upper and lower surfaces of ultra-thin materials 1 respectively with upper layer and lower layer metal
Electrode contact, does not contact between double layer of metal electrode 2,3 surfaces and is connected by lead 5.
The area of lower metal electrode 3 is greater than upper layer metal electrode 2 in specific implementation, so that lead 5 is facilitated to connect.
Embodiment 5
As shown in figure 5, specific implementation includes substrate 4 and the ultra-thin materials 1 being placed on substrate 4 and upper layer and lower layer metal electricity
Pole 2,3, double layer of metal electrode 2,3 are placed in the side on substrate 4, groove are carved on substrate 4, and lower metal electrode 3 is placed in groove
In, in the same plane, upper layer metal electrode 2 is placed in lower metal electrode for 3 upper surface of lower metal electrode and 4 upper surface of substrate
On 3,1 a portion of ultra-thin materials is placed in the other side on substrate 4, and 1 another part of ultra-thin materials entirely extends to lower layer's gold
Belong on 3 upper surface of electrode and between upper layer metal electrode 2 and a part of lower metal electrode 3, double layer of metal electrode 2,3
Another part surface is directly in contact so that the upper and lower surface of a part of ultra-thin materials 1 respectively with upper layer and lower layer metal electrode 2,3
Contact.
Embodiment 6
As shown in fig. 6, specific implementation include substrate 4 and be placed on substrate 4 ultra-thin materials 1, convex configuration 6 and up and down
Double layer of metal electrode 2,3, double layer of metal electrode 2,3 are placed in the side on substrate 4, and the side on substrate 4 is equipped with convex configuration 6
Waveguide, 1 a portion of ultra-thin materials are placed in convex configuration 6, and ultra-thin materials 1 are located at upper layer metal electrode 2 and lower metal
Between a part of electrode 3, double layer of metal electrode 2,3 another part surfaces are directly in contact, so that 1 a part of ultra-thin materials
Upper and lower surface is contacted with upper layer and lower layer metal electrode 2,3 respectively.
Specific experiment test
In order to further verify the validity of the electrode structure designed in the present invention, in specific experiment, single layer stone is selected
Black alkene ultra-thin materials, substrate select to remove the SOI material of the top Si film.The metal electrode 3 of lower layer is Au/Ti electrode, thick
Degree is 60nm/15nm respectively, and upper layer metal electrode 2 is Au electrode, and thickness 60nm, wherein graphene is located at section top metal electricity
Between pole 2 and section bottom metal electrode 3, the width of graphene is 50 μm, the length of the graphene between the metal electrode of two sides
Respectively 5 μm, 10 μm, 20 μm, 40 μm, specific structure is as shown in Figure 9.Specific manufacture craft: the SOI material of selection 220nm thickness
Material, is then removed the Si film of the 220nm on surface by the method for dry etching.Using the side of electron beam exposure and thermal evaporation
Legal system makees lower metal electrode 3, electrode structure Au/Ti, and specific thickness of electrode is 60nm Au, 15nm Ti.It is shifted by wet process
Method single-layer graphene 1 is transferred to 3 structural region of electrode, further by the method for electron beam exposure and oxygen rie
Produce the graphene ribbon that width is 50 μm.Finally is further made in the common region of lower metal electrode 3 and graphene 1
Two layers of metal electrode 2, specific thickness and material are 60nm Au.
The all-in resistance R of the contact resistance and graphene resistance of graphene and metal electrodetotalWith the relationship of graphene size
It indicates are as follows:
Rtotal=2 × ρc/W+ρ□/W×L
Method by measuring I-V curve obtains the graphene resistance and two sides metal electrode and graphene of different length
The all-in resistance of contact resistance, as shown in Figure 10.Wherein blue line (corresponding triangle data point) indicates single-layer metal electrode experiment
Data, black line (corresponding diamond symbols data point) indicate double-level-metal electrode experiment data, and the slope of two straight lines indicates graphite
The square resistance of alkene and the ratio ρ of graphene width□/ W, single-layer metal electrode and double-level-metal electrode slope of a curve basic one
It causes, in the case of illustrating two kinds, the square resistance ρ of graphene□Of substantially equal (graphene of same size, be all 50 μm).Intercept
Indicate 2 × ρ of the sum of the contact resistance of both sides metal electrode and graphenec/ W, wherein the corresponding intercept of multilayer metallic electrode is smaller.
Available, the contact resistivity ρ of single-layer metal electrode and graphene is calculated by further numerical valuecAbout 1500 Ω μm,
Contact resistance RcAbout 30 Ω；And the contact resistivity ρ of multi-layered electrode and graphenecAbout 260 Ω μm；Contact resistance RcAbout 5.2
Ω。
It can be seen that ultra-thin materials proposed by the present invention-novel metal contact electrode can be effectively reduced ultra-thin materials
With the contact resistance of metal electrode.
Above-described embodiment is used to illustrate the present invention, rather than limits the invention, in spirit of the invention and
In scope of protection of the claims, to any modifications and changes that the present invention makes, protection scope of the present invention is both fallen within.
Claims (4)
1. a kind of ultra-thin materials-novel metal contacts electrode, including substrate (4) and the ultra-thin materials (1) being placed on substrate (4)
With multilayer metallic electrode (2,3), it is characterised in that: the whole or a portion of ultra-thin materials (1) between metal electrode,
So that the upper and lower surface of ultra-thin materials (1) is contacted with metal electrode respectively；
The contact electrode uses following one of which:
The first include substrate (4) and the ultra-thin materials (1) being placed on substrate (4) and at least upper layer and lower layer metal electrode (2,
3), double layer of metal electrode (2,3) is placed in the side on substrate (4), and ultra-thin materials (1) a portion is placed on substrate (4) separately
Side, ultra-thin materials (1) another part are located between a part of double layer of metal electrode (2,3), and double layer of metal electrode (2,3) is another
A part of surface is directly in contact, so that the upper and lower surface of ultra-thin materials (1) a part connects with upper layer and lower layer metal electrode respectively
Touching；
Include for second substrate (4) and the ultra-thin materials (1) that are placed on substrate (4) and at least upper layer and lower layer metal electrode (2,
3), ultra-thin materials (1) are all placed between lower metal electrode (3) and upper layer metal electrode (2), in ultra-thin materials (1) whole
Lower surface is contacted with upper layer and lower layer metal electrode respectively, is not contacted between double layer of metal electrode (2,3) surface and is passed through lead (5)
Connection；
The third include substrate (4) and the ultra-thin materials (1) being placed on substrate (4) and at least upper layer and lower layer metal electrode (2,
3), double layer of metal electrode (2,3) is placed in the side on substrate (4), and groove is carved on substrate (4), and lower metal electrode (3) is placed in
In groove, upper layer metal electrode (2) is placed on lower metal electrode (3), and ultra-thin materials (1) a portion is placed in substrate (4)
The upper other side, ultra-thin materials (1) another part extend on lower metal electrode (3) upper surface and are located at upper layer metal electrode
(2) between a part of lower metal electrode (3), double layer of metal electrode (2,3) another part surface is directly in contact, so that
The upper and lower surface of ultra-thin materials (1) a part is contacted with upper layer and lower layer metal electrode (2,3) respectively；
4th kind of ultra-thin materials (1), convex configuration (6) and the upper layer and lower layer metal for including substrate (4) and being placed on substrate (4)
Electrode (2,3), double layer of metal electrode (2,3) are placed in the side on substrate (4), and the side on substrate (4) is equipped with convex configuration
(6), ultra-thin materials (1) a portion is placed on convex configuration (6), ultra-thin materials (1) be located at upper layer metal electrode (2) and under
Between a part of layer metal electrode (3), double layer of metal electrode (2,3) another part surface is directly in contact, so that ultra-thin material
The upper and lower surface of material (1) a part is contacted with upper layer and lower layer metal electrode (2,3) respectively；
5th kind include substrate (4) and the ultra-thin materials (1) being placed on substrate (4), slab waveguide (7) and metal electrode (2,
3), the two sides on substrate (4) are equipped with one group of metal electrode, and every group of metal electrode includes upper layer and lower layer metal electrode (2,3),
It is equipped with slab waveguide (7), is placed on slab waveguide (7) in the middle part of ultra-thin materials (1), ultra-thin materials (1) and bar shaped in the middle part of substrate (4)
Separation layer (8) are set between waveguide (7), ultra-thin materials (1) two sides are located at the upper layer metal electrode (2) of two groups of metal electrodes
Between a part of lower metal electrode (3), double layer of metal electrode (2,3) another part surface of every group of metal electrode is direct
It is in contact, so that the upper and lower surface of ultra-thin materials (1) a part is contacted with upper layer and lower layer metal electrode (2,3) respectively；
6th kind includes substrate (4) and the two panels ultra-thin materials (1) being placed on substrate (4), two layers of separation layer (8), bar shaped wave
(7) and metal electrode (2,3) are led, the two sides on substrate (4) are equipped with one group of metal electrode, and every group of metal electrode includes up and down
Double layer of metal electrode (2,3), first ultra-thin materials (1) side are located therein the upper layer metal electrode (2) of one group of metal electrode
Between a part of lower metal electrode (3), first ultra-thin materials (1) is another to be placed on upper surface in the middle part of substrate (4)；The
Two ultra-thin materials (1) sides be located at another group of metal electrode upper layer metal electrode (2) and one of lower metal electrode (3)
/, second ultra-thin materials (1) other side is placed on first ultra-thin materials (1) other side by the first isolation；The
Be equipped with second layer separation layer (8) and slab waveguide (7) on two ultra-thin materials (1) other sides so that substrate (4) in the middle part of from it is lower to
On be followed successively by first ultra-thin materials (1), the first separation layer, second ultra-thin materials (1), second layer separation layer and slab waveguide
(7)；
The thickness of the ultra-thin materials is 0.1nm~1 μm.
2. a kind of ultra-thin materials according to claim 1-novel metal contacts electrode, it is characterised in that: electric current passes through respectively
Multilayer metallic electrode is flowed into ultra-thin materials (1) from the upper and lower surfaces of ultra-thin materials (1), so that metal electrode and super
Contact resistance between thin material (1) reduces.
3. a kind of ultra-thin materials according to claim 1 to 2-novel metal contacts electrode, it is characterised in that: described
Ultra-thin materials (1) be single-layer or multi-layer two-dimensional material, or be the thin-film material with conductive capability.
4. a kind of ultra-thin materials according to claim 1 to 2-novel metal contacts electrode, it is characterised in that: described
Metal electrode be a kind of metal made of electrode either various metals combine made of metal electrode.
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