CN106970253A - The ac high voltage sensor and measuring method of a kind of new diaphragm structure - Google Patents
The ac high voltage sensor and measuring method of a kind of new diaphragm structure Download PDFInfo
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- CN106970253A CN106970253A CN201710229590.9A CN201710229590A CN106970253A CN 106970253 A CN106970253 A CN 106970253A CN 201710229590 A CN201710229590 A CN 201710229590A CN 106970253 A CN106970253 A CN 106970253A
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- silicon chip
- optical fiber
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/22—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-emitting devices, e.g. LED, optocouplers
Abstract
The present invention relates to ac high-voltage on-line monitoring and zero resistance insulator voltage measurement technologies field, more particularly to the ac high voltage sensor and measuring method of a kind of new diaphragm structure, including high-field electrode, FP sensor electrodes, FP sensing units, micro actuator, base, optical fiber and glass bushing.High-field electrode above and below FP sensor electrodes with being coaxially disposed, and a determining deviation is kept between the two, axle center shoulder hole is offered on FP sensor electrodes, micro actuator is arranged on the bottom of axle center shoulder hole, FP sensing units are bonded at micro actuator end face center, optical fiber sequentially passes through base and the central through hole of micro actuator enters FP sensors, the present invention proposes a kind of Fabry-perot optical fiber high AC voltage measuring method of the serpentine configuration of use MEMS technology processing, new detection technique is provided for ac high-voltage on-line monitoring and zero resistance insulator voltage measurement etc., it is higher in high AC voltage measurement medium sensitivity.
Description
Technical field
The present invention relates to ac high-voltage on-line monitoring and zero resistance insulator voltage measurement technologies field, more particularly to one kind are new
The ac high voltage sensor and measuring method of type diaphragm structure.
Background technology
At present, high voltage measuring method mainly has the high direct voltage measuring method of resitstance voltage divider, the exchange of resistive-capacitive voltage divider
The alternating current-direct current high-tension measurement method of high-tension measurement method and electrostatic voltmeter.And in ac high-voltage measurement, widely use electromagnetism
Formula voltage transformer pt (Potential Transducer) and capacitive divided voltage transformer CVT (Capacitor
VoltageTransducer), there is insulation difficulty when high pressure and super-pressure are measured in this two classes voltage transformer, and iron core magnetic is satisfied
With easily influenceed by temperature, ferromagnetic resonance suppresses the problems such as difficult and high-low pressure signal may be interfered with each other.Electrostatic voltmeter
There is great internal impedance in measurement process, will not be influenced each other between output signal and input signal, therefore electrostatic potential
The voltage measurement method of table has certain application in high voltage field.Surveyed using Fiber-Optic Voltage as the optics of representative
Amount method can solve the problem that above mentioned problem, and unique excellent in terms of measurement accuracy, frequency response, volume size, safety and environmental protection
Gesture.
The content of the invention
Instant invention overcomes above-mentioned the deficiencies in the prior art, propose a kind of new based on micromachined (MEMS) technology
The ac high voltage sensor and measuring method of diaphragm structure.
Technical scheme：
A kind of ac high voltage sensor of new diaphragm structure, including high-field electrode, FP sensor electrodes, FP sensing are single
Member, micro actuator, base, optical fiber and glass bushing；
The high-field electrode keeps a determining deviation, the FP between the two with being coaxially disposed above and below FP sensor electrodes
Sensor electrode is arranged on base, and glass bushing, the FP sensor electrodes are provided between the base and high-field electrode
On offer axle center shoulder hole, the micro actuator is arranged on the bottom of axle center shoulder hole, and FP sensing units are bonded in micro actuator end
Face center, FP sensing units are located at the top of axle center shoulder hole；
The PF sensing units include silicon chip, silicon chip pedestal and optical fiber, and the silicon chip base interior has hollow method amber
Chamber, is provided with silicon chip, the optical fiber sequentially passes through base and the central through hole of micro actuator enters silicon chip base thereon at centre of surface
The Fa-Po cavity of seat.
Further, the FP sensing units be square structure, the silicon chip for the snakelike beam processed using MEMS technology and
Silicon chip pedestal is made through bonding, and its main body square length of side d is 2.44-6.1mm, and thickness e is 500 μm.
Further, the wafer bulk is square structure, and surrounding has the outer of serpentine configuration, the wafer bulk
Square length of side a is 0.5-2mm, and the width b of serpentine configuration outer built-in beam is that gap c width is between 10-100 μm, beam
5-30 μm, the overall length of side l of the silicon chip is 1-2.5mm, and silicon wafer thickness h is 10-100 μm.
Further, the spacing of high-field electrode and the FP sensor electrode is 5mm.
Further, in addition to insulation full skirt, top surface and side of the insulated umbrella pantsuit in ac high voltage sensor.
A kind of ac high voltage measuring method of new diaphragm structure is：When wideband light source export light after optical fiber,
The end face of optical fiber and silicon chip bottom surface produce reflection, the multi-beam formation interference reflected；When applying voltage in high-field electrode,
Uniform electric field is produced between silicon chip and high-field electrode, Fa-Po cavity produces small shape close on high-tension side silicon chip under electric field force effect
Become, so that the chamber for changing sensor FP chambers is long；So that the output spectrum wavelength of FP sensors shifts, pass through sideband demodulation method
The voltage signal on high-field electrode is obtained, so as to realize the electrostatic measurement of voltage.
Beneficial effects of the present invention are：
1) present invention proposes a kind of optical fiber Fabry-Perot high AC voltage measurement of the serpentine configuration of use MEMS technology processing
Method, is that ac high-voltage on-line monitoring and zero resistance insulator voltage measurement etc. provide new detection technique.
2) present invention uses new method amber pressure-sensitive diaphragm structure, higher in high AC voltage measurement medium sensitivity.
Brief description of the drawings
Fig. 1 is a kind of ac high voltage sensor sectional view of new diaphragm structure；
Fig. 2 is FP sensor electrode sectional views；
Fig. 3 is base sectional view；
Fig. 4 is FP sensing unit sectional views；
Fig. 5 is the silicon chip top view with snakelike mechanism that a kind of use MEMS technology is processed；
Fig. 6 is the silicon chip front view with snakelike mechanism that a kind of use MEMS technology is processed；
Fig. 7 is a kind of experimental system sketch of the ac high voltage sensor of new diaphragm structure of test；
Fig. 8 is the experimental data figure that system shown in Figure 7 is obtained；
In figure：1- high-field electrodes；2-FP sensor electrodes；3-FP sensing units；4- micro actuators；5- bases；6- optical fiber；7-
Glass bushing；8- Fa-Po cavities；9- silicon chips；10- silicon chip pedestals；11- serpentine configurations outer；12- insulation full skirts.
Embodiment
Below with reference to accompanying drawing, the present invention is described in detail：
With reference to shown in Fig. 1 to 8, a kind of ac high voltage sensor of new diaphragm structure disclosed in the present embodiment, including
High-field electrode 1, FP sensor electrodes 2, FP sensing units 3, micro actuator 4, base 5, optical fiber 6 and glass bushing 7；
High-field electrode 1 and FP sensor electrodes are coaxially disposed about 2, and keep a determining deviation, FP sensors between the two
Electrode 2 is arranged on base 5, is provided with glass bushing 7, FP sensor electrodes 2 and is offered between base 5 and high-field electrode 1
Axle center shoulder hole, micro actuator 4 is arranged on the bottom of axle center shoulder hole, and FP sensing units 3 are bonded at the end face center of micro actuator 4,
FP sensing units 3 are located at the top of axle center shoulder hole；
PF sensing units 3 include silicon chip 9, silicon chip pedestal 10 and optical fiber 6, and the inside of silicon chip pedestal 10 has hollow Fa-Po cavity
8, silicon chip 9 is provided with centre of surface thereon, optical fiber 6 sequentially passes through base 5 and the central through hole of micro actuator 4 enters silicon chip pedestal
10 Fa-Po cavity 8.
Specifically, FP sensing units 3 are square structure, the silicon chip 9 and silicon chip of the snakelike beam processed using MEMS technology
Pedestal 10 is made through bonding, and its main body square length of side d is 2.44-6.1mm, and thickness e is 500 μm.
Specifically, the main body of silicon chip 9 is square structure, and surrounding has the outer 11 of serpentine configuration, and the structure can increase
The response sensitivity of diaphragm, the main body of silicon chip 10 square length of side a is 0.5-2mm, and the width b of the built-in beam of serpentine configuration outer 11 is
10-100 μm, gap c width is 5-30 μm between beam, and the overall length of side l of silicon chip 9 is 1-2.5mm, and the thickness h of silicon chip 9 can be 10-100 μ
m。
Specifically, the spacing of high-field electrode 1 and FP sensor electrodes 2 is 5mm.
Specifically, in addition to insulation full skirt 10, insulation full skirt 10 is sleeved on top surface and the side of ac high voltage sensor,
Prevent optical fibre voltage sensor in use, flashover electric discharge occurs for outer wall.
The main body FP sensor electrodes 2 of sensor are with aluminium as material of main part, and specific preparation process is as follows：
(1) agent structure (dimensional units are mm) of FP electrodes is designed and processes first, as shown in Figure 2；
(2) FP sensing units are pasted onto micro actuator end face center using semi-conductor electricity glue, the FP sensing unit length of sides are
2.44-6.1mm, thickness are 500 μm, therefore reserve 0.5mm thickness to ensure assembly precision during lathe punching；
(3) operative end surface of FP electrodes is finished and chamfered using lathe, chamfer radius are during processing
5mm。
A kind of ac high voltage measuring method of new diaphragm structure is：When wideband light source export light after optical fiber,
The end face of optical fiber and silicon chip bottom surface produce reflection, the multi-beam formation interference reflected.When applying voltage in high-field electrode,
Uniform electric field is produced between silicon chip and high-field electrode, Fa-Po cavity produces small shape close on high-tension side silicon chip under electric field force effect
Become, so that the chamber for changing sensor FP chambers is long.So that the output spectrum wavelength of FP sensors shifts, pass through sideband demodulation method
The voltage signal on high-field electrode is obtained, so as to realize the electrostatic measurement of voltage.
The measurable range ability of the present invention is 1kV-10kV, as can be drawn from Figure 8, and in 1kV-3kV, the degree of accuracy will
Better than 0.557%, sensitivity is better than 0.231, and in 3kV-6kV, the degree of accuracy is better than 0.252%, and sensitivity is better than 0.135,
The degree of accuracy is better than 0.238% during 6kV-10kV, and sensitivity is better than 0.062.The above-mentioned degree of accuracy and sensitivity are above conventional film
The performance of the optical fiber Fabry-Perot high-voltage sensor of chip architecture.
Above example is the exemplary illustration to this patent, does not limit its protection domain, people in the art
Member can also be changed to its part, as long as no the Spirit Essence beyond this patent, all in the protection domain of this patent.
Claims (6)
1. a kind of ac high voltage sensor of new diaphragm structure, it is characterised in that including high-field electrode (1), FP sensors
Electrode (2), FP sensing units (3), micro actuator (4), base (5), optical fiber (6) and glass bushing (7)；
The high-field electrode (1) is coaxially disposed up and down with FP sensor electrodes (2), and keeps a determining deviation between the two, described
FP sensor electrodes (2) are arranged on base (5), and glass bushing (7) is provided between the base (5) and high-field electrode (1),
Axle center shoulder hole is offered on the FP sensor electrodes (2), the micro actuator (4) is arranged on the bottom of axle center shoulder hole, FP
Sensing unit (3) is bonded at micro actuator (4) end face center, and FP sensing units (3) are located at the top of axle center shoulder hole；
The PF sensing units (3) include having inside silicon chip (9), silicon chip pedestal (10) and optical fiber (6), the silicon chip pedestal (10)
There is hollow Fa-Po cavity (8), be provided with silicon chip (9) at centre of surface thereon, the optical fiber (6) sequentially passes through base (5) and micro-
The central through hole of device (4) is adjusted to enter the Fa-Po cavity (8) of silicon chip pedestal (10).
2. a kind of according to claim 1, ac high voltage sensor of new diaphragm structure, it is characterised in that described
FP sensing units (3) are square structure, and the silicon chip (9) and silicon chip pedestal (10) for the snakelike beam processed using MEMS technology are through key
Close and be made, its main body square length of side d is 2.44-6.1mm, thickness e is 500 μm.
3. a kind of ac high voltage sensor of new diaphragm structure according to claim 2, it is characterised in that the silicon
Piece (9) main body is square structure, and surrounding has the outer (11) of serpentine configuration, and silicon chip (9) the main body square length of side a is
0.5-2mm, the width b of serpentine configuration outer (11) built-in beam is that gap c width is 5-30 μm, institute between 10-100 μm, beam
It is 1-2.5mm to state the overall length of side l of silicon chip (9), and silicon chip (9) thickness h is 10-100 μm.
4. a kind of ac high voltage sensor of new diaphragm structure according to claim 1, it is characterised in that the height
The spacing of piezoelectricity pole (1) and FP sensor electrodes (2) is 5mm.
5. the ac high voltage sensor of a kind of new diaphragm structure according to claim 1, it is characterised in that also include
Insulate full skirt (10), and insulation full skirt (10) is sleeved on top surface and the side of ac high voltage sensor.
6. a kind of high electricity of the exchange based on the ac high voltage sensor of new diaphragm structure described in claim 1,2,3,4 or 5
Press measuring method, it is characterised in that when the light of wideband light source output is after optical fiber, produced in the end face of optical fiber and silicon chip bottom surface anti-
Penetrate, the multi-beam formation interference reflected；When applying voltage in high-field electrode, produced between silicon chip and high-field electrode uniform
Electric field, Fa-Po cavity produces miniature deformation close on high-tension side silicon chip under electric field force effect, so as to change the chamber of sensor FP chambers
It is long；So that the output spectrum wavelength of FP sensors shifts, the voltage signal on high-field electrode is obtained by sideband demodulation method,
So as to realize the electrostatic measurement of voltage.
Priority Applications (1)
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| CN201710229590.9A CN106970253B (en) | 2017-04-10 | 2017-04-10 | A kind of the ac high voltage sensor and measurement method of novel diaphragm structure |
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| CN201710229590.9A CN106970253B (en) | 2017-04-10 | 2017-04-10 | A kind of the ac high voltage sensor and measurement method of novel diaphragm structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109164364A (en) * | 2018-11-16 | 2019-01-08 | 哈尔滨理工大学 | It is a kind of for monitoring the space full angle ultrasonic wave optical fiber Fabry-Perot sensor of liquid-solid composite insulating power apparatus local discharge |
| CN109945965A (en) * | 2019-03-27 | 2019-06-28 | 国网上海市电力公司 | The arm-type sensitive diaphragm of optical fiber EFPI ultrasonic sensor supporting beam |
| CN113075505A (en) * | 2021-03-25 | 2021-07-06 | 哈尔滨理工大学 | Insulating material electric-heat combined aging test device |
| CN113281579A (en) * | 2021-04-28 | 2021-08-20 | 西安理工大学 | Chip packaging electrostatic measurement sensor based on F-P interference principle |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109164364A (en) * | 2018-11-16 | 2019-01-08 | 哈尔滨理工大学 | It is a kind of for monitoring the space full angle ultrasonic wave optical fiber Fabry-Perot sensor of liquid-solid composite insulating power apparatus local discharge |
| CN109164364B (en) * | 2018-11-16 | 2024-04-12 | 哈尔滨理工大学 | Space full-angle ultrasonic optical fiber Fabry-Perot sensor for monitoring partial discharge of liquid-solid composite insulating power equipment |
| CN109945965A (en) * | 2019-03-27 | 2019-06-28 | 国网上海市电力公司 | The arm-type sensitive diaphragm of optical fiber EFPI ultrasonic sensor supporting beam |
| CN113075505A (en) * | 2021-03-25 | 2021-07-06 | 哈尔滨理工大学 | Insulating material electric-heat combined aging test device |
| CN113075505B (en) * | 2021-03-25 | 2022-08-02 | 哈尔滨理工大学 | Insulating material electric-heat combined aging test device |
| CN113281579A (en) * | 2021-04-28 | 2021-08-20 | 西安理工大学 | Chip packaging electrostatic measurement sensor based on F-P interference principle |
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