CN106960821A - A kind of LED component and preparation method thereof - Google Patents
A kind of LED component and preparation method thereof Download PDFInfo
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- CN106960821A CN106960821A CN201710150717.8A CN201710150717A CN106960821A CN 106960821 A CN106960821 A CN 106960821A CN 201710150717 A CN201710150717 A CN 201710150717A CN 106960821 A CN106960821 A CN 106960821A
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- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
The invention discloses a kind of LED component and preparation method thereof, wherein methods described includes：LED chip array of packages is formed on substrate, the exiting surface of the LED chip is set close to the substrate, and electrode salient point is emerging in the non-exiting surface of the array of packages；In the non-exiting surface formation flexbile base of the array of packages；The flexbile base is patterned, to expose electrode salient point；Metal level is formed on the flexbile base, and patterning forms circuit；The substrate and the array of packages are cut, the encapsulation unit of the LED chip is formed；The encapsulation unit is bent, makes the exiting surface of the LED chip towards outside；The filling insulation colloid between the LED chip.By the invention it is obtained that dual surface LED component, multiaspect LED component or polyhedron LED component, the LED chip lighted compared to one side, it is possible to achieve stereo luminous, and compact conformation, the brightness shown by the LED component entirety are stronger.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of LED component and preparation method thereof.
Background technology
LED (English full name is Light Emitting Diode, is translated into Light-Emitting Diode) is a kind of semiconductor of solid-state
Device, it occurs compound releasing energy by carrier and causes photon to be sent out by the use of solid semiconductor chip as luminescent material
Penetrate, electric energy is directly converted into luminous energy.LED has the advantages that brightness height, small volume, efficiency high and long lifespan, traffic indicate,
The fields such as outdoor total colouring are widely used.
Flip LED chips are close with the ability to bear under its low-voltage, high current, high brightness, high reliability, high saturation current
The features such as spending, it has also become by the universally recognized new generation product of LED industry circle.As shown in figure 1,1 is n-GaN layers, 2 be p-GaN
Layer, 3 be MQWs layers, and 4 be sapphire layer, and 5 be p-electrode, and 6 be p-electrode salient point, and 7 be n-electrode, and 8 be n-electrode salient point.It is wherein blue precious
Rock layers 4 are the exiting surface of flip LED chips, and light direction is as illustrated by the arrows in fig. 1.
In existing flip LED chips packaging technology, generally by single LEDs chip individual packages, this kind of LED encapsulation structure hair
Brightness is relatively low；Need multiple this kind of encapsulating structures being arranged into stereochemical structure if three-dimensional illumination is realized, it is loosely organized, take
Space is big.
The content of the invention
In view of this, the embodiments of the invention provide a kind of LED component and preparation method thereof, encapsulated with solving single LEDs
Structure light-emitting efficiency is low, the problem of realize loosely organized during three-dimensional illumination.
According in a first aspect, the embodiments of the invention provide a kind of preparation method of LED component, comprising the following steps：
LED chip array of packages is formed on substrate, the exiting surface of the LED chip is set close to the substrate, electrode
Salient point is emerging in the non-exiting surface of the array of packages；
In the non-exiting surface formation flexbile base of the array of packages；
The flexbile base is patterned, to expose electrode salient point；
Metal level is formed on the flexbile base, and patterning forms circuit；
The substrate and the array of packages are cut, the encapsulation unit of the LED chip is formed；
The encapsulation unit is bent, makes the exiting surface of the LED chip towards outside；
The filling insulation colloid between the LED chip.
Alternatively, it is described to form metal level on the flexbile base, and pattern the step of forming pad and circuit and wrap
Include：Seed Layer is made on the flexbile base after patterning；To the seed pattern layers, welding disk pattern and circuit are formed
Pattern；By electroplating technology, the pad and the circuit are formed in the Seed Layer.
Alternatively, methods described also includes：The step of welding lead or setting contact pin pin.
Alternatively, the preparation method of the array of packages, comprises the following steps：
Some LED chips are attached on substrate, wherein the exiting surface of the LED chip is set close to the substrate；
Encapsulation glue-line is formed on the substrate, and the packaging plastic at least covers the root of the electrode salient point of the LED chip
Simultaneously expose the electrode salient point in portion.
Alternatively, the preparation method of the array of packages, also includes：It is additionally included in the substrate surface formation phosphor powder layer
The step of.
Alternatively, the phosphor powder layer includes some fluorescent material units, each unit and the light extraction of the LED chip
Face is correspondingly arranged.
Alternatively, the encapsulation glue-line step that formed on the substrate also includes：The encapsulation glue-line is polished
Processing, exposes the electrode salient point.
Alternatively, mixed with highly heat-conductive material and/or photoresist in the packaging plastic.
Alternatively, mixed with highly heat-conductive material in the insulation colloid.
According to second aspect, the embodiments of the invention provide one kind, according to first aspect or first aspect, any one is optional
Dual surface LED component and/or multiaspect LED component and/or polyhedron prepared by the preparation method of LED component described in embodiment
LED component.
The preparation method for the LED component that the embodiment of the present invention is provided, forms LED chip array of packages on substrate, its
The exiting surface of middle LED chip is set close to substrate, and electrode salient point is emerging in the non-exiting surface of array of packages, then in array of packages
Non- exiting surface formation flexbile base, to flexbile base patterning to expose electrode salient point, then form on flexbile base metal
Layer, and patterning forms circuit, cuts substrate and array of packages, forms the encapsulation unit of LED chip, finally bending encapsulation is single
Member, makes the exiting surface of LED chip towards outside, and filling insulation colloid, obtains LED component between LED chip.By this hair
It is bright, dual surface LED component, multiaspect LED component or polyhedron LED component can be obtained, the LED chip lighted compared to one side, we
The LED component that method is obtained can realize stereo luminous, and compact conformation；It can with two-sided or multifaceted light-emitting, so as to
Stronger light is got from multiple directions, so that the brightness shown by the LED component entirety is stronger.
Brief description of the drawings
The features and advantages of the present invention can be more clearly understood from by reference to accompanying drawing, accompanying drawing is schematical without that should manage
Solve to carry out any limitation to the present invention, in the accompanying drawings：
Fig. 1 shows the structural representation of flip LED chips；
Fig. 2 shows a kind of flow chart of the preparation method of LED component according to embodiments of the present invention；
Fig. 3 shows the top view of substrate and the arrangement mode of multiple LED chips；
Fig. 4 to Figure 16 is shown obtained by a kind of each step of the preparation method of LED component of the execution embodiment of the present invention
Product side sectional view；
Figure 17 shows the schematic diagram in encapsulation unit formation closed polygon region；
Figure 18 shows the schematic diagram for an encapsulation unit for cutting gained；
Figure 19 shows the flow chart of the envelope preparation method of LED component according to another embodiment of the present invention；
Reference is expressed as：10- substrates, 20- silica gel, 30- phosphor powder layers, 40-LED chips, 50- packaging plastics, 60- are soft
Property basic unit, 70- Seed Layers, 80- get rid of Seed Layer, 90- metal levels, 100- wires or contact pin pin, 110- insulation colloids.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
A part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those skilled in the art are not having
There is the every other embodiment made and obtained under the premise of creative work, belong to the scope of protection of the invention.
Embodiment one
The present embodiment provides a kind of dual surface LED component, and Figure 16 shows the side sectional view of dual surface LED component.This is two-sided
LED component include top on the outside of two LED chips 40 setting back-to-back, two LED chips set back-to-back and under
Side is each provided with substrate 10, and LED chip 40 is packaged glue 50 and coated, and two sheets of flexible is provided between two LED chips 40
Basic unit-metal level, the flexbile base-metal level includes spaced flexbile base 60 and metal level 90.Two sheets of flexible basic unit-
Metal level is connected in side, and the opposite side of two sheets of flexible basic unit-metal level is provided with wire or contact pin pin 100, at two layers
Filled with insulation colloid 110 between flexbile base-metal level.
As one embodiment of the present of invention, in the present embodiment using exiting surface and electrode salient point positioned at chip it is relative two
The LED chip of individual side, such as flip LED chips shown in Fig. 1, prepares LED component.It should be noted that with skill
The progress of art, the LED chip that exiting surface and electrode salient point are located at relative two sides of chip is not limited to flip LED chips, this
The there is provided method of invention is also applied for preparing LED component using these LED chips.
The present embodiment also provides a kind of preparation method of LED component, as shown in Fig. 2 the preparation method of the LED component includes
Following steps：
S110：LED chip array of packages is formed on substrate, the exiting surface of LED chip is set close to substrate, electrode salient point
It is emerging in the non-exiting surface of array of packages.
As shown in figure 8, the array of packages includes transparency carrier 10 and LED chip 40, LED chip 40 is packaged glue 50 and wrapped
Cover, electrode salient point is emerging in the non-exiting surface of array of packages.The non-exiting surface is the upper surface of the array of packages shown in Fig. 8.
S120：In the non-exiting surface formation flexbile base of array of packages.
As one embodiment of the present of invention, flexbile base 60 be selected from, but not limited to, polyimide resin (polyimide,
Abbreviation PI).
S130：Flexbile base is patterned, to expose electrode salient point.
As shown in Figure 10, the position of the electrode salient point of the defect part of flexbile base 60 correspondence LED chip 40.
S140：Metal level is formed on flexbile base, and patterning forms circuit.
As shown in figure 13, the region that horizontal line is filled in figure is metal level 90, the sky of the same layer adjacent with the metal level 90
White filling region is the flexbile base 60 retained.On flexbile base 60 between two adjacent LEDs chip 40, the phase of metal level 90
Connection, forms circuit.
S150：Substrate and array of packages are cut, the encapsulation unit of LED chip is formed.
Encapsulation unit refers to that two-sided or multifaceted light-emitting LED can be formed by bending and fixation according to embodiments of the present invention
The unit of component.For example shown in Figure 14, the encapsulation unit includes two adjacent LED chips 40.
As shown in figure 14, the substrate 10 between adjacent LED chip 40 and the packaging plastic 50 of array of packages are cut, adjacent
Flexbile base 60 and metal level 90 are only retained between LED chip 40.
S160：Encapsulation unit is bent, makes the exiting surface of LED chip towards outside.
Along the encapsulation unit shown in the bending of flexbile base 60 Figure 14 between the adjacent LED chip 40 shown in Figure 14, it is
The exiting surface of LED chip 40, will the folding back-to-back of two LED chips 40 towards outside.
S170：The filling insulation colloid between LED chip.
As shown in figure 16, filled black region is insulation colloid 110 between two LED chips 40 in figure.The insulation colloid
110 one side fix the encapsulation unit after bending, on the other hand prevent the metal level wiring circuit contact of encapsulation unit.
It should be added that, Fig. 4 to Figure 16 simply show two LED chips, prepare the feelings of dual surface LED component
Shape.As a kind of mode of texturing, encapsulation unit can also include the LED chip arranged in yi word pattern, bend the encapsulation unit, shape
Into closed polygon as shown in figure 17, then in closed polygon area filling insulation colloid, multifaceted light-emitting can be obtained
LED component.Or, as another mode of texturing, encapsulation unit can also include the LED chip (example of any combination arrangement
As shown in figure 18), the encapsulation unit is bent, polyhedron (for example bending the encapsulation unit shown in Figure 18, form square) is formed,
Filling insulation colloid, obtains LED component inside polyhedron.It should be added that, Figure 18 is only to give encapsulation list
The bent situation for forming closed polyhedral of member, in addition, encapsulation unit can also form the situation of non-closed, such as forms box
Body, in tray interior filling insulation colloid, obtains LED component.
The preparation method of above-mentioned LED component, forms the exiting surface of LED chip array of packages, wherein LED chip on substrate
Set close to substrate, electrode salient point is emerging in the non-exiting surface of array of packages, then forms soft in the non-exiting surface of array of packages
Property basic unit, to flexbile base patterning to expose electrode salient point, then form on flexbile base metal level, and pattern and form line
Road, cuts substrate and array of packages, forms the encapsulation unit of LED chip, finally bends encapsulation unit, make the light extraction of LED chip
Facing to outside, filling insulation colloid, obtains LED component between LED chip.By the invention it is obtained that dual surface LED group
Part, multiaspect LED component or polyhedron LED component, the LED chip lighted compared to one side, the LED component that this method is obtained can be with
Realize stereo luminous, and compact conformation；It can be stronger so as to be got from multiple directions with two-sided or multifaceted light-emitting
Light, so that the brightness shown by the LED component entirety is stronger.
Alternatively, the thermal conductivity of packaging plastic is increased, so that LED core mixed with highly heat-conductive materials such as graphenes in insulation colloid
The heat Quick diffusing of piece is gone out.
As a kind of optional embodiment of the present embodiment, sealed in packaging plastic mixed with the highly heat-conductive materials such as graphene, increase
The thermal conductivity of glue is filled, so that the heat Quick diffusing of LED chip is gone out；Or, mixed with photoresist (including particulate), to strengthen
Absorption to the side veiling glare of LED chip, the display effect of the LED chip after optimization encapsulation, becomes apparent from display.Certainly
Can also be simultaneously mixed with highly heat-conductive material and photoresist.
Embodiment two
Figure 19 shows an embodiment flow chart of the preparation method of the LED component shown in embodiment one.According to figure
19, the embodiment comprises the following steps：
S210：One layer of silica gel is coated on the surface of the substrate.As shown in figure 4, wherein 10 be transparency carrier, 20 be silica gel.
S220：Phosphor powder layer is coated in layer of silica gel.As shown in figure 5, wherein 30 be phosphor powder layer.
As a kind of optional embodiment of the present embodiment, the step of coating phosphor powder layer includes：Fluorescent material is entrained in
In adhesive (such as transparent silica gel), mixture is formed；Then the phosphor powder layer is formed on substrate by silk-screen printing technique.
Alternatively, in addition to by silk-screen printing technique, it would however also be possible to employ the mode of spot printing.Compared to the mode of spot printing, silk
The operating efficiency of net typography is higher.
Alternatively, when coating phosphor powder layer, whole substrate surface is not coated, but the phosphor powder layer is including some
The exiting surface of fluorescent material unit, each unit and LED chip is correspondingly arranged, as shown in figure 3, wherein, dotted line frame represents LED core
Piece, namely fluorescent material unit.
The exiting surface of current LED chip is sapphire layer, therefore the light that LED chip is sent is the light with blueness,
The exiting surface side of LED chip sets fluorescence sealing, the LED chip after encapsulation can be made to light for white light.Alternatively,
If not requiring that LED chip lights is necessary for white light, above-mentioned steps S220 can be omitted, and only need to perform above-mentioned steps S210,
For adhering to LED chip, without coating phosphor powder layer.Or, above-mentioned steps S210 can be omitted, directly in substrate table
Face coats the transparent silica gel doped with fluorescent material.
S230：By the phosphor powder layer of multiple LED chips attaching on the surface of the substrate.As shown in fig. 6, wherein 40 be LED core
Piece.
As a kind of mode of texturing of this step, when only carrying out above-mentioned steps S210 without performing above-mentioned steps S220,
Then multiple LED chips are attached in the layer of silica gel of substrate surface.
S240：Packaging plastic is coated on substrate, encapsulation glue-line is formed, packaging plastic at least covers the electrode salient point of LED chip
Root.As shown in fig. 7, wherein 50 show encapsulation glue-line.
S250：Grinding process is carried out to encapsulation glue-line, exposes electrode salient point.As shown in Figure 7 and Figure 8, film surface is encapsulated
Expose the electrode salient point above LED chip after being polished.
It should be added that, in the case of manufacture craft is enough accurately, when can coat packaging plastic using mould
The electrode salient point of LED chip can just be exposed, without performing step S250.
S260：In the non-exiting surface formation flexbile base of array of packages.For example, the non-exiting surface coating in array of packages is soft
Property baseplate material polyimide resin (polyimide, abbreviation PI).As shown in figure 9,60 be flexbile base,
Array of packages as shown in Figure 8 is formd by above-mentioned steps S210 to S250, LED chip in the array of packages
Exiting surface is set close to substrate, non-exiting surface of the electrode salient point circuit in array of packages.Step S260 specifically refers to embodiment
One step S120.
S270：Flexbile base is patterned, to expose electrode salient point.As shown in Figure 10, the defect part pair of flexbile base 60
Answer the position of the electrode salient point of LED chip 40.
S280：Seed Layer is made on flexbile base after patterning.As shown in figure 11, wherein black heavy line represents to plant
Sublayer 70.
S290：To seed pattern layers, welding disk pattern and line pattern are formed.As shown in figure 12, to the pattern of Seed Layer 70
After change, the Seed Layer on flexbile base between LED chip Top electrode salient point is eliminated, as shown in figure 80.
S2100：By electroplating technology, pad and circuit are formed on the seed layer.As shown in figure 13, wherein horizontal line fill area
Domain is institute's metal cladding 90.
By above-mentioned steps S280, S290 and S2100, metal level is formed on flexbile base, and patterning forms pad
And circuit.
S2110：Substrate and flexbile base are cut, the encapsulation unit of LED chip is formed.As shown in figure 14, cut adjacent
The packaging plastic 50 of substrate 10 and array of packages between LED chip 40, only retains flexbile base 60 between adjacent LED chip 50
With metal level 90.
S2120：Welding lead sets contact pin pin.As shown in figure 15, vertical line filling region is welding lead or contact pin
Pin 100.
It should be added that, step S2120 can also be first carried out, then perform step S2110.
S2130：Encapsulation unit is bent, makes the exiting surface of LED chip towards outside.Along the adjacent LED core shown in Figure 15
The encapsulation unit shown in the bending of flexbile base 60 Figure 15 between piece, makes the exiting surface of LED chip 40 towards outside, will be two
LED chip 40 is folded back-to-back.
S2140：The filling insulation colloid between LED chip.The step specifically refers to the step S170 of embodiment one.
Although being described in conjunction with the accompanying embodiments of the invention, those skilled in the art can not depart from the present invention
Spirit and scope in the case of various modification can be adapted and modification, such modification and modification are each fallen within by appended claims institute
Within the scope of restriction.
Claims (10)
1. a kind of preparation method of LED component, it is characterised in that comprise the following steps：
LED chip array of packages is formed on substrate, the exiting surface of the LED chip is set close to the substrate, electrode salient point
It is emerging in the non-exiting surface of the array of packages；
In the non-exiting surface formation flexbile base of the array of packages；
The flexbile base is patterned, to expose electrode salient point；
Metal level is formed on the flexbile base, and patterning forms circuit；
The substrate and the array of packages are cut, the encapsulation unit of the LED chip is formed；
The encapsulation unit is bent, makes the exiting surface of the LED chip towards outside；
The filling insulation colloid between the LED chip.
2. the preparation method of LED component according to claim 1, it is characterised in that the shape on the flexbile base
Into metal level, and pattern the step of forming pad and circuit and include：
Seed Layer is made on the flexbile base after patterning；
To the seed pattern layers, welding disk pattern and line pattern are formed；
By electroplating technology, the pad and the circuit are formed in the Seed Layer.
3. the preparation method of LED component according to claim 1 or 2, it is characterised in that also include：Welding lead is set
The step of putting contact pin pin.
4. the preparation method of the LED component according to claim any one of 1-3, it is characterised in that the array of packages
Preparation method, comprises the following steps：
Some LED chips are attached on substrate, wherein the exiting surface of the LED chip is set close to the substrate；
Encapsulation glue-line is formed on the substrate, and the packaging plastic at least covers the root of the electrode salient point of the LED chip simultaneously
Expose the electrode salient point.
5. the preparation method of LED component according to claim 4, it is characterised in that the preparation method of the array of packages,
Also include：
The step of being additionally included in the substrate surface formation phosphor powder layer.
6. the preparation method of LED component according to claim 5, it is characterised in that the phosphor powder layer includes some glimmering
Light powder unit, each unit and the exiting surface of the LED chip are correspondingly arranged.
7. the preparation method of the LED component according to claim any one of 4-6, it is characterised in that described in the substrate
The upper encapsulation glue-line step that formed also includes：
Grinding process is carried out to the encapsulation glue-line, exposes the electrode salient point.
8. the preparation method of the LED component according to claim any one of 4-7, it is characterised in that mixed in the packaging plastic
There are highly heat-conductive material and/or photoresist.
9. the preparation method of the LED component according to claim any one of 1-8, it is characterised in that in the insulation colloid
Mixed with highly heat-conductive material.
10. dual surface LED component prepared by a kind of preparation method of LED component as described in claim any one of 1-9 and/or
Multiaspect LED component and/or polyhedron LED component.
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| CN108520873A (en) * | 2018-04-29 | 2018-09-11 | 浙江唯唯光电科技股份有限公司 | A kind of tandem type LED chip assembly and its assembly method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101268120A (en) * | 2005-09-22 | 2008-09-17 | 三菱化学株式会社 | Member for semiconductor light-emitting device, method of manufacturing the same, and semiconductor light-emitting device using the same |
| CN101878540A (en) * | 2007-11-29 | 2010-11-03 | 日亚化学工业株式会社 | Light-emitting device and its manufacturing method |
| CN103682029A (en) * | 2012-08-31 | 2014-03-26 | 欧司朗股份有限公司 | Light emitting device and lighting device comprising same |
-
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101268120A (en) * | 2005-09-22 | 2008-09-17 | 三菱化学株式会社 | Member for semiconductor light-emitting device, method of manufacturing the same, and semiconductor light-emitting device using the same |
| CN101878540A (en) * | 2007-11-29 | 2010-11-03 | 日亚化学工业株式会社 | Light-emitting device and its manufacturing method |
| CN103682029A (en) * | 2012-08-31 | 2014-03-26 | 欧司朗股份有限公司 | Light emitting device and lighting device comprising same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108520873A (en) * | 2018-04-29 | 2018-09-11 | 浙江唯唯光电科技股份有限公司 | A kind of tandem type LED chip assembly and its assembly method |
| CN108520873B (en) * | 2018-04-29 | 2020-07-10 | 浙江唯唯光电科技股份有限公司 | Serial L ED chip assembly and assembling method thereof |
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